
Elisabeth BLANQUET
153
Documents
Publications
Publications
Silicon and cellulose: influence of the substrate on the growth of ALD Al2O3RAFALD 2024, Nov 2024, Nantes, France
Communication dans un congrès
hal-04828062
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Thermodynamics applied to gas – solid processesSadi Carnot's Legacy - "Celebrating the 200th anniversary of the 2nd law of thermodynamics", Ecole Polytechnique, Sep 2024, Palaiseau (Ecole Polytechnique), France
Communication dans un congrès
hal-04819222
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Atomic Layer Deposition Processes for emerging materialsInternational Seminar on Advances in Materials, Oct 2024, Madras (Chennai) - online, India
Communication dans un congrès
hal-04823817
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Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devicesWOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece
Communication dans un congrès
hal-04819565
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Gaseous phase thermodynamics for TaN thin filmsCALPHAD 2022, CALPHAD, May 2022, STOCKHLOM, Sweden
Communication dans un congrès
hal-04896419
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Chemical vapor deposition of Ti3SiC2 thin films on SiC materials: process modeling and experimentsICSCRM2022, Oct 2022, Davos (Suisse), Switzerland
Communication dans un congrès
hal-04827901
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Revisited Thermal and Plasma Enhanced Atomic Layer Deposition processes of metal nitridesALD/ALE 2022, 22nd International Conference on Atomic Layer Deposition, Jun 2022, Ghent (BE), Belgium
Communication dans un congrès
hal-04819213
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Growth of c-axis Textured AlN PVD Film on a 2D-MoS2 Seed LayerAVS 68th international symposium & exhibition, Nov 2022, Pittburgh, Philadelphia, USA, United States
Communication dans un congrès
hal-04819507
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Ti3SiC2-SiC multilayer thin films deposited by High Temperature Reactive Chemical Vapor Deposition48th International Conference on Metallurgical Coatings and Thin Films, ICMCTF 2022, May 2022, San Diego, United States
Communication dans un congrès
hal-04819400
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Stability enhancement of silver nanowire based transparent electrodes coated with metal nitride thin films by PE-ALDRAFALD 2021, Nov 2021, Marseille, France
Communication dans un congrès
hal-04614750
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Improvement of Mechanical Properties of Nanoparticles-Based Thin Films by Using Atomic Layer DepositionALD 2021 - 21st International Conference on Atomic Layer Deposition, 2021, Virtual (On-line), France
Communication dans un congrès
hal-04819392
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Study of the Impact of Annealing and Doping Element on the Crystallinity of Hafnium Oxide: Application for FeFET MemoriesALD 2021 - 21st International Conference on Atomic Layer Deposition, 2021, Virtual / Online, France
Communication dans un congrès
hal-04819364
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High temperature chemical vapor deposition of aluminum nitride thin films and coatings: properties and applications2nd International Conference on materials science and engineering, Mar 2019, Cairo, Egypt
Communication dans un congrès
hal-02119556
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AlN coatings on 3D titanium alloy structureselaborated by Electron Beam MeltingEuroCVD 22 – Baltic ALD 16, Jun 2019, Luxembourg, Luxembourg
Communication dans un congrès
hal-04757259
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Revisited Thermal and Plasma Enhanced Atomic Layer Deposition combined with Chemical Vapor Deposition processes of metal nitrides: challenges and opportunitiesMRS Fall Meeting, Symposium Advanced Atomic Layer Deposition and Chemical Vapor Deposition Techniques and Applications, Dec 2019, Boston, United States
Communication dans un congrès
hal-02414264
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Epitaxial 33°Y-oriented LiNbO3 films for Silicon TechnologyISAF-EMF-ICE-IWPM-PFM meeting, Jul 2019, Lausanne, Switzerland
Communication dans un congrès
hal-02325566
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From process modelling to the evaluation of superconducting properties of ultrathin films of epitaxial niobium nitrideEuroCVD 22-Baltic ALD 16 Conference, Jun 2019, Luxemburg, Luxembourg
Communication dans un congrès
hal-04818728
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ALD: opportunities and challengesChemistry of Atomic Layer Deposition, Belux 3 LIST, Mar 2018, Luxemburg, Luxembourg
Communication dans un congrès
hal-04818150
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Advances in nitride film and coating growth by chemical vapor deposition78th Japan Society of Applied Physics Conference, Sep 2017, Fukuoka, Japan
Communication dans un congrès
hal-01677320
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Visualizing the incipient Atomic Layer Deposition of ZnO ultra thin films on In0.53Ga0.47As for tailoring contact resistivityE-MRS Spring 2017, May 2017, Strasbourg, France
Communication dans un congrès
hal-02016907
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In situ X-ray studies during the early stage of ZnO Atomic Layer Deposition on InGaAsRayons X & Matière, Nov 2017, Villeneuve d'Ascq, France
Communication dans un congrès
hal-02016916
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In Situ X-ray Studies of Crystalline Texture and Strain During the Initial Stages of ZnO Atomic Layer DepositionWorkshop on synchrotron radiation to study atomic layer deposition, Jun 2016, ALBA synchrotron, Barcelona, Spain
Communication dans un congrès
hal-01453376
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In-situ synchrotron analysis of the very first ALD growth steps of ZnO on a-SiO2 and c-plane Al2O3Workshop RAFALD 2015, Nov 2015, Grenoble, France
Communication dans un congrès
hal-02016969
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Functionalization of HTCVD Grown Aluminium NitrideInternational Conference on Semiconductor Materials and Devices (ISSMD-3), 2015, Chennai, India
Communication dans un congrès
hal-01138862
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In Situ X-Ray Scattering and Optical Substrate Curvature Studies of ZnO Growth by Atomic Layer and Metal Organic Chemical Vapor DepositionMRS spring meeting, Apr 2015, San Francisco, United States
Communication dans un congrès
hal-02016958
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CVD of aluminium nitrides for high temperature applicationsInternational Conference on Crystal Growth (3CG), Nitrides for lighting, Photovoltaics and sensing applications, Dec 2015, Hong Khong, Japan
Communication dans un congrès
hal-01677329
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CVD of silicon on steels for flexible solar cellsIndian Conference on Crystal Growth, 2015, Chennai, India
Communication dans un congrès
hal-01138863
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Combined Effects of Supersaturation and Stress for the Control of AlN Film QualityInternational Conference on Metallurgical Coatings and Thin Films (ICMCTF), " Hard Coatings and Vapor Deposition Technology, Apr 2017, San Diego, United States
Communication dans un congrès
hal-01677366
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Functionalization of Aluminium Nitride Thin Films and CoatingsInternational Conference on Metallurgical Coatings and Thin Films (ICMCTF), " Hard Coatings and Vapor Deposition Technology", 2015, San Diego, United States
Communication dans un congrès
hal-01138864
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Functionalization of HTCVD Grown Aluminium Nitride3CG Collaborative Conference on Crystal Growth, 2014, Phuket, Thailand
Communication dans un congrès
hal-01138861
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Various Applications of (Ti,Al)N Thin films Grown from a Vapor Phase3CG Collaborative Conference on Crystal Growth, 2014, Phuket, Thailand
Communication dans un congrès
hal-01138921
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Niobium Nitride Thin Films deposited by High Temperature Chemical Vapor Deposition3CG Collaborative Conference on Crystal Growth, 2014, Phuket, Thailand
Communication dans un congrès
hal-01138859
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High temperature chemical vapor deposition of aluminum nitride, growth and evaluationEuropean Conference on Chemical Vapor Deposition, EUROCVD19, 2013, Varna, Bulgaria
Communication dans un congrès
hal-00946648
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Chemistry of iodine and aerosol composition in the primary circuit of a nuclear power plant21st International Conference Nuclear Energy for Europe, Sep 2012, Lubiana, Slovenia
Communication dans un congrès
hal-00779422
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High Temperature Chemical Vapor Deposition of thick (5 to 20 mm) Aluminum nitride layersInternational Workshop on crystal growth and characterization of advanced materials and devices., Dec 2012, Chennai, India
Communication dans un congrès
hal-00812217
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Deposition of nanostructures by Atomic Layer DepositionInternational Workshop−CVD−Diagnostic−Modeling, Jun 2012, Nancy, France
Communication dans un congrès
hal-00812216
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HTCVD of silicon on steels for the development of inexpensive solar cells5th International Conference on Functional Materials, ISFM2012, Dec 2012, Perth, Australia. pp.28-30
Communication dans un congrès
hal-00947072
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Atomic Layer Deposition of TiO2 ultrathin films on 3D substrates for energy applicationsMRS 2012, 2012, San Francisco CA, France. pp.63-68, ⟨10.1557/opl.2012.913⟩
Communication dans un congrès
hal-00807357
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Thermodynamic simulations Applied to Gas-Solid Materials Fabrication ProcessesTwenty Fourth National Seminar on crystal growth, Dec 2012, Chennai, India
Communication dans un congrès
hal-00812218
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Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication.International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Communication dans un congrès
hal-00692280
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SiC and AlN growth processing : experiments and simulation.International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Communication dans un congrès
hal-00692283
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Plasma Enhanced Atomic Layer Deposition of ZrO2: A Thermodynamic Approach.219th ECS Meeting, May 2011, Montréal, Canada
Communication dans un congrès
hal-00692284
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Chemistry of iodine and aerosol composition in the primary circuit of a nuclear power plantInternational Congress on Advances in Nuclear Power Plants, May 2011, Nice, France
Communication dans un congrès
hal-00639872
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Développements de dépôts ALD : expériences et évaluations thermodynamiquesMatériaux 2010, Oct 2010, NANTES, France
Communication dans un congrès
hal-00591214
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Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronicsRenewable Energy 2010, Jun 2010, Yokohama, Japan
Communication dans un congrès
hal-00502036
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On the cracks formation in AlN films grown by chlorinated High Temperature Chemical Vapor Deposition.IWN 2010, Sep 2010, TAMPA, United States
Communication dans un congrès
hal-00610213
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Developments of ALD Processes: Experiments and Thermodynamic Evaluations218th ECS Meeting, Oct 2010, LAS VEGAS, NV, United States
Communication dans un congrès
hal-00591213
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Silicon Carbide Growth: C/Si Ratio Evaluation and ModelingInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88
Communication dans un congrès
hal-00173481
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Chemical Vapour Deposition and Atomic layer Deposition processes of amorphous or nanocrystalline thin filmsInternational Symposium on Metastable, Amorphous and Nanostructured Materials (ISMANAM 2009), Jul 2009, Pékin, China. ⟨10.1016/j.jallcom.2010.03.205⟩
Communication dans un congrès
hal-00488402
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The ways to deposit amorphous or nanocrystalline material from a vapor phase11th International Conference on Advanced Materials (ICAM), Sep 2009, Rio de Janeiro, Brazil
Communication dans un congrès
hal-00488887
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Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.987-990
Communication dans un congrès
hal-00426590
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Experimental and Thermodynamics for the Evaluation of ALD growth processesInternational Conference on Metallurgical Coatings and Thin Films (ICMCTF) 2009, 2009, United States
Communication dans un congrès
hal-00389286
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Growth of thick AlN layers by High Temperature CVDInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Otsu, Japan. pp.1269-1272
Communication dans un congrès
hal-00337372
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Experimental ant Thermodynamics for the Evaluation of Atomic Layer Deposition processes.ICMCTF - international Conference Metallurgical Coatings and Thin Films, Apr 2009, SAN DIEGO, United States
Communication dans un congrès
hal-00488400
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Chemical Vapour Deposition processes of metallic amorphous or nanocrystalline thin filmsWorld Premier Institute, AIMR (Advanced Institute of Materials Research) WPI-EUROPE-INPG on Metallic Glasses, Aug 2009, GRENOBLE, France
Communication dans un congrès
hal-00488885
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Knudsen cell mass spectrometry applied to the investigation of organometallic precursors vapoursEUROCVD, Sep 2007, Netherlands. pp.8813-8817
Communication dans un congrès
hal-00196653
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High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modelingEuropean conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20
Communication dans un congrès
hal-00141097
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SiC growth : evaluation and modelingMRS Spring Meeting "B- Silicon Carbide – Materials, Processing and Devices", Apr 2006, San Francisco, United States. pp.64-77
Communication dans un congrès
hal-00141104
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High temperature processing of poly-SiC substrates from the vapor phase for wafer-bondingInternational Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States
Communication dans un congrès
hal-00149073
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Large grain polySiC boules for wafer-boundingInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.71-74
Communication dans un congrès
hal-00173118
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Oxydation et évaluation de la température d'inflammation de poudres d'UC et d'UNMATERIAUX 2006, 2006, Dijon, France. a paraitre
Communication dans un congrès
hal-00149057
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Ion beam analysis of ternary silicides me-Si-N (Me = Re Ta Ti W) thin films used as diffusion barriers in advanced metallizationInternational Symposium on Chemical Vapor Deposition : CDV-XIV and EUROCVD11, Sep 1997, Paris, France. pp.1-8
Communication dans un congrès
in2p3-00007487
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Ti-Al-N-Based Hard Coatings: Thermodynamical Background, CVD Deposition, and Properties. A ReviewJaime Andres Perez Taborda; Alba Avila. Coatings and Thin-Film Technologies, IntechOpen, 2019, ⟨10.5772/intechopen.79747⟩
Chapitre d'ouvrage
hal-02283304
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Thermodynamics simulations applied to gas-solid materials fabrication processesThermodynamics - Fundamentals and its application in science, INTECH, pp.191-214, 2012, 979-953-307-836-5
Chapitre d'ouvrage
hal-00824429
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Method for functionalizing a polymer-based substrate by chemical deposition of a thin layerUnited States, Patent n° : 20230272522 - App. 18/006,335. 2023
Brevet
hal-04402589
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Structure adaptée à la formation de cellules solairesFrance, N° de brevet: FR2971086 (A1). EPM. 2012
Brevet
hal-00824463
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Quantum critical scaling of the conductivity tensor at the metal-insulator transition in Nb$_{1-x}$Ti$_{x}$N2019
Pré-publication, Document de travail
hal-02401451
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