Elisabeth BLANQUET

153
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Publications

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Integration of epitaxial LiNbO3 thin films with silicon technology

Ausrine Bartasyte , Stefania Oliveri , Sondes Boujnah , Samuel Margueron , Romain Bachelet et al.
Nanotechnology, 2024, 35, pp.175601. ⟨10.1088/1361-6528/ad1b98⟩
Article dans une revue hal-04396804 v1
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MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy

J. Patouillard , M. Bernard , S. Cadot , R. Gassilloud , N. Bernier et al.
Journal of Vacuum Science & Technology A, 2024, 42 (5), ⟨10.1116/6.0003652⟩
Article dans une revue cea-04765729 v1
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Silver nanowire networks coated with a few nanometer thick aluminum nitride films for ultra-transparent and robust heating applications

Dorina Papanastasiou , Arnaud Mantoux , Alexandre Crisci , Hugo Ribeiro , Abderrahime Sekkat et al.
ACS Applied Nano Materials, 2024, 7 (11), pp.12312-12322. ⟨10.1021/acsanm.4c00044⟩
Article dans une revue hal-04728910 v1
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Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements

J. Patouillard , R. Gassilloud , F. Mercier , A. Mantoux , R. Boichot et al.
Journal of Vacuum Science & Technology A, 2023, 41 (5), pp.052201. ⟨10.1116/6.0002678⟩
Article dans une revue hal-04189163 v1
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Ti3SiC2-SiC multilayer thin films deposited by high temperature reactive chemical vapor deposition

Jorge Sanchez Espinoza , Fatma Trabelsi , Christophe Escape , Ludovic Charpentier , Marc Fivel et al.
Surface and Coatings Technology, 2022, 447, ⟨10.1016/j.surfcoat.2022.128815⟩
Article dans une revue hal-03762133 v1
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Green upconversion improvement of TiO2 codoped Er3+-Yb3+ nanoparticles based thin film by adding ALD-Al2O3 for silicon solar cell applications

Fatma Trabelsi , Frédéric Mercier , Elisabeth Blanquet , Alexandre Crisci , Raphael Boichot et al.
Journal of Luminescence, 2022, 252, pp.119282. ⟨10.1016/j.jlumin.2022.119282⟩
Article dans une revue hal-03807670 v1
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Coupling powder bed additive manufacturing and vapor phase deposition methods for elaboration of coated 3D Ti-6Al-4V architectures with enhanced surface properties

A. Moll , J.-J. Blandin , R. Dendievel , E. Gicquel , M. Pons et al.
Surface and Coatings Technology, 2021, 415, pp.127130. ⟨10.1016/j.surfcoat.2021.127130⟩
Article dans une revue hal-03262005 v1
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Asymmetry-Induced Redistribution in Sn(IV)–Ti(IV) Hetero-Bimetallic Alkoxide Precursors and Its Impact on Thin-Film Deposition by Metal–Organic Chemical Vapor Deposition

Shashank Mishra , Erwann Jeanneau , Liang Tian , Ioana Nuta , Elisabeth Blanquet et al.
Crystal Growth & Design, 2021, ⟨10.1021/acs.cgd.1c01136⟩
Article dans une revue hal-03510420 v1
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Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire

Sabine Lay , Frédéric Mercier , R. Boichot , G. Giusti , M. Pons et al.
Journal of Materials Science, 2020, 55, pp.9152-9162. ⟨10.1007/s10853-019-04240-x⟩
Article dans une revue hal-02901657 v1
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In situ x-ray studies of the incipient ZnO atomic layer deposition on In 0.53 Ga 0.47 As

E. Skopin , L. Rapenne , J.L. Deschanvres , H. Renevier , E. Blanquet et al.
Physical Review Materials, 2020, 4 (4), ⟨10.1103/PhysRevMaterials.4.043403⟩
Article dans une revue hal-02994857 v1
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Improved critical temperature of superconducting plasma-enhanced atomic layer deposition of niobium nitride thin films by thermal annealing

Liang Tian , Ivane Bottala-Gambetta , Victor Marchetto , Manoël Jacquemin , Alexandre Crisci et al.
Thin Solid Films, 2020, 709, pp.138232. ⟨10.1016/j.tsf.2020.138232⟩
Article dans une revue hal-02997691 v1
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Synthesis of upconversion TiO2:Er3+-Yb3+ nanoparticles and deposition of thin films by spin coating technique

Fatma Trabelsi , Frédéric Mercier , Elisabeth Blanquet , Alexandre Crisci , Rached Salhi
Ceramics International, 2020, 46 (18), pp.28183-28192. ⟨10.1016/j.ceramint.2020.07.317⟩
Article dans une revue hal-03000684 v1
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Chemical vapor deposition of titanium nitride thin films: kinetics and experiments

Juan Su , Rapahel Boichot , Elisabeth Blanquet , Frederic Mercier , Michel Pons
CrystEngComm, 2019, 21 (26), pp.3974-3981. ⟨10.1039/C9CE00488B⟩
Article dans une revue hal-02315144 v1
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Deposition and characterization of (Ti, Al)N coatings deposited by thermal LPCVD in an industrial reactor

Florent Uny , Sofiane Achache , Salim Lamri , Jaafar Ghanbaja , Evelyne Fischer et al.
Surface and Coatings Technology, 2019, 358, pp.923-933. ⟨10.1016/j.surfcoat.2018.12.014⟩
Article dans une revue hal-02119534 v1

Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering

Fabien Rozé , Francois Pierre , Olivier Gourhant , François Bertin , Elisabeth Blanquet et al.
Semiconductor Science and Technology, 2019, 34 (6), pp.065005. ⟨10.1088/1361-6641/ab171c⟩
Article dans une revue hal-02169850 v1

Influence of oxide density on O 2 diffusivity in thermally grown SiO 2 on Si and SiGe and on oxidation kinetics

Fabien Rozé , Patrice Gergaud , Nicolas Jaouen , Olivier Gourhant , Elisabeth Blanquet et al.
Semiconductor Science and Technology, 2019, 34 (6), pp.065023. ⟨10.1088/1361-6641/ab1228⟩
Article dans une revue hal-02169826 v1

Impact of silica-substrate chemistry on tantalum nitride thin films deposited by atomic layer deposition: Microstructure, chemistry and electrical behaviors

Fabien Volpi , Lionel Cadix , Gregory Berthomé , Stéphane Coindeau , Thierry Encinas et al.
Thin Solid Films, 2019, 669, pp.392-398. ⟨10.1016/j.tsf.2018.10.006⟩
Article dans une revue hal-02050223 v1

Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

L. Tian , S. Ponton , M. Benz , A. Crisci , R. Reboud et al.
Surface and Coatings Technology, 2018, 347, pp.181 - 190. ⟨10.1016/j.surfcoat.2018.04.031⟩
Article dans une revue hal-01809316 v1

Superconducting properties of NbTiN thin films deposited by high-temperature chemical vapor deposition

D. Hazra , N. Tsavdaris , A. Mukhtarova , M. Jacquemin , F. Blanchet et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (14), pp.5. ⟨10.1103/PhysRevB.97.144518⟩
Article dans une revue hal-02046421 v1

Reactive chemical vapor deposition of heteroepitaxial Ti1-xAlxN films

F. Mercier , H. Shimoda , S. Lay , M. Pons , E. Blanquet
CrystEngComm, 2018, 20 (12), pp.1711-1715. ⟨10.1039/c7ce02129a⟩
Article dans une revue hal-02067845 v1

A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

Roy Dagher , Elisabeth Blanquet , Christian Chatillon , Timotée Journot , Marc Portail et al.
CrystEngComm, 2018, 20 (26), pp.3702 - 3710. ⟨10.1039/c8ce00383a⟩
Article dans une revue hal-01871982 v1
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The initial stages of ZnO atomic layer deposition on atomically flat In$_{0.53}$Ga$_{0.47}$As substrates

Evgeniy Skopin , Laetitia Rapenne , Hervé Roussel , Jean-Luc Deschanvres , Elisabeth Blanquet et al.
Nanoscale, 2018, ⟨10.1039/c8nr02440e⟩
Article dans une revue hal-01819188 v1

A Chemical Vapor Deposition Route to Epitaxial Superconducting NbTiN Thin Films

N. Tsavdaris , D. Harza , S. Coindeau , G. Renou , F. Robaut et al.
Chemistry of Materials, 2017, 29 (14), pp.5824 - 5830. ⟨10.1021/acs.chemmater.7b00490⟩
Article dans une revue hal-01656288 v1

HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process

M. Pons , J. Su , M. Chubarov , R. Boichot , Florian Mercier et al.
Journal of Crystal Growth, 2017, 468, pp.235 - 240. ⟨10.1016/j.jcrysgro.2017.01.002⟩
Article dans une revue hal-01656377 v1

Comparative Analysis of Growth Rate Enhancement and Ge Redistribution during Silicon-Germanium Oxidation by Rapid Thermal Oxidation

F. Roze , O. Gourhant , E. Blanquet , F. Bertin , M. Juhel et al.
ECS Transactions, 2016, 75 (8), pp.67 - 78. ⟨10.1149/07508.0067ecst⟩
Article dans une revue hal-01656081 v1

Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

D Hazra , N Tsavdaris , S Jebari , Alexander Grimm , F Blanchet et al.
Superconductor Science and Technology, 2016, 29 (10), ⟨10.1088/0953-2048/29/10/105011⟩
Article dans une revue hal-01451259 v1

Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition

R. Boichot , L. Tian , M.-I. Richard , A. Crisci , A. Chaker et al.
Chemistry of Materials, 2016, 28 (2), pp.592-600. ⟨10.1021/acs.chemmater.5b04223⟩
Article dans une revue hal-01366565 v1

Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications

L. Tian , A. Soum-Glaude , F. Volpi , L. Salvo , G. Berthome et al.
Journal of Vacuum Science & Technology A, 2015, 33 (1), ⟨10.1116/1.4904025⟩
Article dans une revue hal-01211353 v1

X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl-2-based inductively coupled plasma

R. Chanson , S. Bouchoule , Christophe Cardinaud , C. Petit-Etienne , E. Cambril et al.
Journal of Vacuum Science and Technology, 2014, 32 (1), pp.011219. ⟨10.1116/1.4862256⟩
Article dans une revue hal-00963760 v1

Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

A. Claudel , V. Fellmann , I. Gélard , N. Coudurier , D. Sauvage et al.
Thin Solid Films, 2014, 573 (12), pp.140-147. ⟨10.1016/j.tsf.2014.11.022⟩
Article dans une revue hal-01121944 v1

Growth of boron nitride on (0001) AlN templates by High Temperature- Hydride Vapor Phase Epitaxy (HT-HVPE)

N. Coudurier , R. Boichot , Florian Mercier , R. Reboud , S. Lay et al.
Physics Procedia, 2013, 46, pp.102-106. ⟨10.1016/j.phpro.2013.07.050⟩
Article dans une revue hal-00911142 v1

CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation

R. Boichot , N. Coudurier , Florian Mercier , A. Claudel , N. Baccar et al.
Theoretical Chemistry Accounts: Theory, Computation, and Modeling, 2013, 133 (1), ⟨10.1007/s00214-013-1419-8⟩
Article dans une revue hal-00935012 v1

Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer

R. Boichot , N. Coudurier , Florian Mercier , S. Lay , A. Crisci et al.
Surface and Coatings Technology, 2013, 237, pp.118-125. ⟨10.1134/s1063783413100211⟩
Article dans une revue istex hal-00935041 v1

New method to evaluate materials outgassing used in MEMS thin film packaging technology

B. Savornin , X. Baillin , E. Blanquet , I. Nuta , D. Saint Patrice et al.
Microelectronic Engineering, 2013, 107, pp.97-100. ⟨10.1016/j.mee.2012.12.002⟩
Article dans une revue istex hal-00850232 v1

Experimental kinetic study of oxidation of uranium monocarbide powders under controlled oxygen partial pressures below 230 degrees C

C. Berthinier , C. Rado , O. Dugne , M. Cabie , C. Chatillon et al.
Journal of Nuclear Materials, 2013, 432 (1-3), pp.505-519. ⟨10.1016/j.jnucmat.2012.08.002⟩
Article dans une revue istex hal-00850222 v1

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

M. Pons , R. Boichot , N. Coudurier , A. Claudel , E. Blanquet et al.
Surface and Coatings Technology, 2013, 230, pp.111-118. ⟨10.1016/j.surfcoat.2013.06.011⟩
Article dans une revue istex hal-00935047 v1

Analysis of the iodine gas phase produced by interaction of CsI and MoO<sub>3</sub> vapours in flowing steam

M. Gouello , H. Mutelle , F. Cousin , S. Sobanska , E. Blanquet
Nuclear Engineering and Design, 2013, 263, pp.462 - 472. ⟨10.1016/j.nucengdes.2013.06.016⟩
Article dans une revue istex hal-00860999 v1

Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

N. Coudurier , R. Boichot , V. Fellmann , A. Claudel , E. Blanquet et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2013, 3, pp.362-365. ⟨10.1002/pssc.201200686⟩
Article dans une revue istex hal-00911167 v1

Significance of initial stages on the epitaxial growth of AlN using High Temperature Halide Chemical Vapor Deposition.

M. Balaji , A. Claudel , V. Fellmann , I. Gélard , E. Blanquet et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2012, C9 ((3-4)), pp.511.514
Article dans une revue hal-00812202 v1

Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature.

Vincent Consonni , G. Rey , Hervé Roussel , B. Doisneau , E. Blanquet et al.
Acta Materialia, 2012, 61 (1), pp.22-31. ⟨10.1016/j.actamat.2012.09.006⟩
Article dans une revue istex hal-00794225 v1

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy.

M. Balaji , A. Claudel , V. Fellmann , I. Gelard , E. Blanquet et al.
Journal of Alloys and Compounds, 2012, 526, pp.103-109. ⟨10.1016/j.jallcom.2012.02.111⟩
Article dans une revue istex hal-00728110 v1

Stability of High Temperature Chemical Vapor Deposited Silicon Based Structures on Metals for Solar Conversion.

I. Gelard , G. Chichignoud , E. Blanquet , H.N. Xuan , R. Cruz et al.
Journal of Nanoscience and Nanotechnology, 2011, 11 (9), pp.8318-8322. ⟨10.1166/jnn.2011.5077⟩
Article dans une revue hal-00664178 v1

Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process.

A. Claudel , E. Blanquet , D. Chaussende , R. Boichot , B. Doisneau et al.
Journal of Crystal Growth, 2011, 335 (1), pp.17-24. ⟨10.1016/j.jcrysgro.2011.09.018⟩
Article dans une revue istex hal-00664176 v1

Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD).

A. Claudel , Y. Chowanek , E. Blanquet , D. Chaussende , R. Boichot et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (7-8), pp.2019-2021
Article dans une revue hal-00692267 v1

Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

A. Claudel , E. Blanquet , D. Chaussende , R. Boichot , Roland Martin et al.
Journal of The Electrochemical Society, 2011, 158 (3), pp.H328-H332. ⟨10.1149/1.3536477⟩
Article dans une revue hal-00640123 v1
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Experimental study of uranium carbide pyrophoricity

Clément Berthinier , S. Coullomb , Cyril Rado , Elisabeth Blanquet , Raphaël Boichot et al.
Powder Technology, 2011, 208 (2), pp.312-327. ⟨10.1016/j.powtec.2010.08.022⟩
Article dans une revue istex hal-00633937 v1

Developments of TaN ALD Process for 3D Conformal Coatings

V. Brize , T. Prieur , P. Violet , L. Artaud , G. Berthome et al.
Chemical Vapor Deposition, 2011, 17 (10-12), pp.284-295. ⟨10.1002/cvde.201100045AccessionNumber:WOS⟩
Article dans une revue hal-00664701 v1

Conformal Atomic Layer Deposition of TA-Based Diffusion Barrier Film Using a Novel Mono-Guanidinate Precursor.

T. Prieur , V. Brize , T. Cornier , B. Doisneau , A. Farcy et al.
Journal of Nanoscience and Nanotechnology, 2011, 11 (9), pp.8383-8386. ⟨10.1166/jnn.2011.5057⟩
Article dans une revue hal-00664179 v1
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Chemical vapour deposition and atomic layer deposition of amorphous and nanocrystalline metallic coatings: Towards deposition of multimetallic films

E. Blanquet , A. Mantoux , M. Pons , C. Vahlas
Journal of Alloys and Compounds, 2010, 504S, pp.422-424. ⟨10.1016/j.jallcom.2010.03.205⟩
Article dans une revue hal-00531708 v1

Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices

A. Lintanf-Salaun , A. Mantoux , E. Djurado , E. Blanquet
Microelectronic Engineering, 2010, 87 (3), pp.373-378. ⟨10.1016/j.mee.2009.06.015⟩
Article dans une revue istex hal-00528040 v1

Cracking study of pentakis(dimethylamino)tantalum vapors by Knudsen cell mass spectrometry

P. Violet , I. Nuta , C. Chatillon , E. Blanquet
Rapid Communications in Mass Spectrometry, 2010, 24 (2), pp.2949-2956. ⟨10.1002/rcm.4727⟩
Article dans une revue istex hal-00542911 v1

ALD TaN from PDMAT in TSV Architectures

Virginie Brizé , Laurent Artaud , Grégory Berthomé , Raphaël Boichot , S. Daniele et al.
ECS Transactions, 2010, 33 (2), pp.183-193. ⟨10.1149/1.3485255⟩
Article dans une revue hal-00961033 v1

Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation

R. Boichot , A. Claudel , N. Baccar , A. Milet , E. Blanquet et al.
Surface and Coatings Technology, 2010, 205 (5), pp.1294 - 1301. ⟨10.1016/j.surfcoat.2010.08.049⟩
Article dans une revue istex hal-01658032 v1

High temperature chemical vapor deposition of AlN/W1−xRex coatings on bulk SiC

F.Z. Roki , M. Pons , Florian Mercier , R. Boichot , C. Bernard et al.
Surface and Coatings Technology, 2010, 205 (5), pp.1302-1306. ⟨10.1016/j.surfcoat.2010.08.107⟩
Article dans une revue istex hal-00547906 v1

Gaseous phase study of the Zr-organometallic ALD precursor TEMAZ by mass spectrometry

D. Monnier , I. Nuta , C. Chatillon , M. Gros-Jean , F. Volpi et al.
Journal of The Electrochemical Society, 2009, 156 (1), pp.71-75
Article dans une revue hal-00374416 v1

Growth of thick AIN layers by high temperature CVD ('HTCVD)

A. Claudel , E. Blanquet , D. Chaussende , M. Audier , D. Pique et al.
Materials Science Forum, 2009, 600-603, pp.1269-1272
Article dans une revue hal-00389378 v1

PEALD ZrO2 films deposition on Ti and Si substrates

D. Monnier , M. Gros-Jean , E. Deloffre , F. Volpi , E. Blanquet
ECS Transactions, 2009, 25 (8), pp.235-241
Article dans une revue hal-00457447 v1

High-speed growth and characterization of polycrystalline AlN layers by High temperature Chemical Vapor Deposition (HTCVD).

A. Claudel , E. Blanquet , D. Chaussende , Roland Martin , D. Pique et al.
ECS Transactions, 2009, 25 (8), pp.323-326
Article dans une revue hal-00457445 v1
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Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

A. Claudel , E. Blanquet , D. Chaussende , M. Audier , D. Pique et al.
Journal of Crystal Growth, 2009, 311 (13), pp.3371-3379. ⟨10.1016/j.jcrysgro.2009.03.053⟩
Article dans une revue hal-00408487 v1

A special reactor coupled with a high-temperature mass spectrometer for the investigation of the vaporization and cracking of organometallic compounds

P. Violet , I. Nuta , L. Artaud , H. Collas , E. Blanquet et al.
Rapid Communications in Mass Spectrometry, 2009, 23, pp.793-800
Article dans une revue hal-00389421 v1

Experimental thermodynamics for the evaluation of ALD growth processes.

P. Violet , E. Blanquet , D. Monnier , I. Nuta , C. Chatillon
Surface and Coatings Technology, 2009, 204 (6-7), pp.882-886. ⟨10.1016/j.surfcoat.2009.08.022⟩
Article dans une revue istex hal-00456226 v1

Silicon Carbide growth : C/Si ratio Evaluation and Modeling

M. Pons , S.I. Nishizawa , P. Wellmann , E. Blanquet , D. Chaussende et al.
Materials Science Forum, 2009, 600-603, pp.83-88
Article dans une revue hal-00389369 v1

On gaseous phase of ALD precursors by means of thermodynamics.

P. Violet , I. Nuta , C. Chatillon , E. Blanquet
ECS Transactions, 2009, 25 (8), pp.567-573
Article dans une revue hal-00457446 v1

Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD)

E. Blanquet , D. Chaussende , A. Claudel , D. Pique , M. Pons
Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S348-S351
Article dans une revue hal-00432756 v1

Thermodynamic and experimental study of UC powders ignition.

F. Le Guyadec , C. Rado , S. Joffre , C. Chatillon , E. Blanquet et al.
Journal of Nuclear Materials, 2009, 393 (2), pp.333-342. ⟨10.1016/j.jnucmat.2009.06.009⟩
Article dans une revue istex hal-00434236 v1

Low-Temperature low-resistivity PEALD TiN using TDMAT under hydrogen redecing ambient

P. Caubet , T. Blomberg , R. Benaboud , C. Wyon , E. Blanquet et al.
Journal of The Electrochemical Society, 2008, 155 (8), pp.625-632
Article dans une revue hal-00374706 v1

XPS studies of the ALD-growth of TaN diffusion barriers : Impact of the dielectric surface chemistry on the growth mechanism

F. Volpi , L. Cadix , G. Berthomé , E. Blanquet , N. Jourdan et al.
Microelectronic Engineering, 2008, 85 (10), pp.2068-2070
Article dans une revue hal-00345527 v1

DNA microarrays on silicon nanostructures : Optimization of the multilayer stack for fluorescence detection

C. Oillic , P. Mur , E. Blanquet , P. Delapierre , F. Vinet et al.
Biosensors & bioelectronics, 2007, 22 (9-10), pp.2086-2092
Article dans une revue hal-00141724 v1

Chlorinated silicon carbide CVD revisited for polycristalline bulk growth

G. Chichignoud , M. Ucar , M. Pons , E. Blanquet
Surface and Coatings Technology, 2007, 201, pp.8888-8892
Article dans une revue hal-00114193 v1

Knudsen cell mass spectrometry applied to the investigation of organometallic precursors vapours

P. Violet , I. Nuta , C. Chatillon , E. Blanquet
Surface and Coatings Technology, 2007, 201, pp.8813-8817
Article dans une revue hal-00196401 v1

Chemical vapor deposition of thin films and coatings: Evaluation and process modeling

C. Bernard , E. Blanquet , M. Pons
Surface and Coatings Technology, 2007, 202, pp.790-797
Article dans une revue hal-00196412 v1

Elaboration of Ta2O5 Thin Films Using Electrostatic Spray Deposition for Microelectronic Applications

A. Lintanf , A. Mantoux , E. Blanquet , E. Djurado
Journal of Physical Chemistry C, 2007, 111 (15), pp.5708-5714
Article dans une revue hal-00196396 v1

High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

G. Chichignoud , M. Pons , E. Blanquet , D. Chaussende , M. Anikin et al.
Surface and Coatings Technology, 2006, 201 (7), pp.4014-4020
Article dans une revue hal-00141052 v1
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Plasma etching of HfO<sub>2</sub> at elevated temperatures in chlorine-based chemistry

M. Helot , Thierry Chevolleau , L. Vallier , O. Joubert , Elisabeth Blanquet et al.
Journal of Vacuum Science and Technology, 2006, 24 (1), pp.30-40. ⟨10.1116/1.2134707⟩
Article dans une revue hal-00397060 v1

Ion beam analysis in advanced metallization

R. Somatri-Bouamrane , N. Chevarier , A. Chevarier , A.M. Dutron , E. Blanquet et al.
Journal of Electron Spectroscopy, 1997, 97, pp.741
Article dans une revue in2p3-00000122 v1
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Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics

A.-M. Dutron , E. Blanquet , V. Ghetta , R. Madar , C. Bernard
Journal de Physique IV Proceedings, 1995, 05 (C5), pp.C5-1141-C5-1148. ⟨10.1051/jphyscol:19955135⟩
Article dans une revue jpa-00253832 v1
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Thermochemical and Mass Transport Modelling of the Chemical Vapour Deposition of Si1-xGex

M. Pons , E. Blanquet , C. Bernard , H. Rouch , J. Dedulle et al.
Journal de Physique IV Proceedings, 1995, 05 (C5), pp.C5-63-C5-70. ⟨10.1051/jphyscol:1995504⟩
Article dans une revue istex jpa-00253760 v1
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Tractable chemical models for CVD of silicon and carbon

E. Blanquet , S. Gokoglu
Journal de Physique IV Proceedings, 1993, 03 (C3), pp.C3-43-C3-49. ⟨10.1051/jp4:1993305⟩
Article dans une revue istex jpa-00251362 v1
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PROCESSING OF WSi2 FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM IN SITU CHLORINATION OF METAL

E. Blanquet , N. Thomas , P. Suryanarayana , C. Vahlas , C. Bernard et al.
Journal de Physique IV Proceedings, 1991, 02 (C2), pp.C2-873-C2-880. ⟨10.1051/jp4:19912104⟩
Article dans une revue istex jpa-00249782 v1
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CHEMICAL VAPOR DEPOSITION OF TaSi2 AND WSi2 AT ATMOSPHERIC PRESSURE FROM IN SITU PREPARED METAL CHLORIDES

E. Blanquet , C. Vahlas , C. Bernard , R. Madar , J. Palleau et al.
Journal de Physique Colloques, 1989, 50 (C5), pp.C5-557-C5-563. ⟨10.1051/jphyscol:1989565⟩
Article dans une revue jpa-00229597 v1

Silicon and cellulose: influence of the substrate on the growth of ALD Al2O3

Hugo Patureau , Thierry Encinas , Alexandre Crisci , Frédéric Mercier , Erwan Gicquel et al.
RAFALD 2024, Nov 2024, Nantes, France
Communication dans un congrès hal-04828062 v1

Thermodynamics applied to gas – solid processes

E. Blanquet , Ioana Nuta
Sadi Carnot's Legacy - "Celebrating the 200th anniversary of the 2nd law of thermodynamics", Ecole Polytechnique, Sep 2024, Palaiseau (Ecole Polytechnique), France
Communication dans un congrès hal-04819222 v1

Atomic Layer Deposition Processes for emerging materials

E. Blanquet
International Seminar on Advances in Materials, Oct 2024, Madras (Chennai) - online, India
Communication dans un congrès hal-04823817 v1

Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devices

Michalis Gavalas , Frédéric Mercier , E. Blanquet , Konstantinos Zekentes
WOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece
Communication dans un congrès hal-04819565 v1

Gaseous phase thermodynamics for TaN thin films

Ioana Nuta , Arnaud Mantoux , Laurent Artaud , E. Blanquet
CALPHAD 2022, CALPHAD, May 2022, STOCKHLOM, Sweden
Communication dans un congrès hal-04896419 v1

Chemical vapor deposition of Ti3SiC2 thin films on SiC materials: process modeling and experiments

Jorge Sanchez Espinoza , Fatma Trabelsi , Michalis Gavalas , Marc Fivel , E. Blanquet et al.
ICSCRM2022, Oct 2022, Davos (Suisse), Switzerland
Communication dans un congrès hal-04827901 v1

Revisited Thermal and Plasma Enhanced Atomic Layer Deposition processes of metal nitrides

E. Blanquet , Arnaud Mantoux , Frédéric Mercier , Raphaël Boichot , Ioana Nuta et al.
ALD/ALE 2022, 22nd International Conference on Atomic Layer Deposition, Jun 2022, Ghent (BE), Belgium
Communication dans un congrès hal-04819213 v1

Growth of c-axis Textured AlN PVD Film on a 2D-MoS2 Seed Layer

Julien Patouillard , E. Blanquet , Arnaud Mantoux , Frédéric Gianesello , Mathieu Bernard et al.
AVS 68th international symposium & exhibition, Nov 2022, Pittburgh, Philadelphia, USA, United States
Communication dans un congrès hal-04819507 v1

Ti3SiC2-SiC multilayer thin films deposited by High Temperature Reactive Chemical Vapor Deposition

Jorge Sanchez Espinoza , Fatma Trabelsi , Ludovic Charpentier , E. Blanquet , Frédéric Mercier
48th International Conference on Metallurgical Coatings and Thin Films, ICMCTF 2022, May 2022, San Diego, United States
Communication dans un congrès hal-04819400 v1

Stability enhancement of silver nanowire based transparent electrodes coated with metal nitride thin films by PE-ALD

Dorina Papanastasiou , Arnaud Mantoux , Marceline Bonvalot , Hugo Ribeiro , Samia Belahcen et al.
RAFALD 2021, Nov 2021, Marseille, France
Communication dans un congrès hal-04614750 v1

Improvement of Mechanical Properties of Nanoparticles-Based Thin Films by Using Atomic Layer Deposition

Fatma Trabelsi , Marc Fivel , Rached Salhi , Frédéric Mercier , E. Blanquet
ALD 2021 - 21st International Conference on Atomic Layer Deposition, 2021, Virtual (On-line), France
Communication dans un congrès hal-04819392 v1

Study of the Impact of Annealing and Doping Element on the Crystallinity of Hafnium Oxide: Application for FeFET Memories

Ivane Bottala-Gambetta , Mickael Gros-Jean , Arnaud Mantoux , Nicolas Vaxelaire , Stéphane Coindeau et al.
ALD 2021 - 21st International Conference on Atomic Layer Deposition, 2021, Virtual / Online, France
Communication dans un congrès hal-04819364 v1

High temperature chemical vapor deposition of aluminum nitride thin films and coatings: properties and applications

Michel Pons , Danying Chen , Manoel Jacquemin , Juan Su , Raphael Boichot et al.
2nd International Conference on materials science and engineering, Mar 2019, Cairo, Egypt
Communication dans un congrès hal-02119556 v1

AlN coatings on 3D titanium alloy structureselaborated by Electron Beam Melting

Adrien Moll , Erwan Gicquel , Melek Genc , Michel Pons , Rémy Dendievel et al.
EuroCVD 22 – Baltic ALD 16, Jun 2019, Luxembourg, Luxembourg
Communication dans un congrès hal-04757259 v1

Revisited Thermal and Plasma Enhanced Atomic Layer Deposition combined with Chemical Vapor Deposition processes of metal nitrides: challenges and opportunities

Elisabeth Blanquet , Arnaud Mantoux , Frédéric Mercier , Raphael Boichot , Ioana Nuta et al.
MRS Fall Meeting, Symposium Advanced Atomic Layer Deposition and Chemical Vapor Deposition Techniques and Applications, Dec 2019, Boston, United States
Communication dans un congrès hal-02414264 v1

Epitaxial 33°Y-oriented LiNbO3 films for Silicon Technology

Ausrine Bartasyte , Oliveri S , Samuel Margueron , Romain Bachelet , Guillaume Saint-Girons et al.
ISAF-EMF-ICE-IWPM-PFM meeting, Jul 2019, Lausanne, Switzerland
Communication dans un congrès hal-02325566 v1

From process modelling to the evaluation of superconducting properties of ultrathin films of epitaxial niobium nitride

Manoël Jacquemin , E. Blanquet , M. Pons , Frédéric J. Mercier
EuroCVD 22-Baltic ALD 16 Conference, Jun 2019, Luxemburg, Luxembourg
Communication dans un congrès hal-04818728 v1

ALD: opportunities and challenges

E. Blanquet
Chemistry of Atomic Layer Deposition, Belux 3 LIST, Mar 2018, Luxemburg, Luxembourg
Communication dans un congrès hal-04818150 v1

Advances in nitride film and coating growth by chemical vapor deposition

Michel Pons , Danying Chen , Manoel Jacquemin , Juan Su , Raphael Boichot et al.
78th Japan Society of Applied Physics Conference, Sep 2017, Fukuoka, Japan
Communication dans un congrès hal-01677320 v1

Visualizing the incipient Atomic Layer Deposition of ZnO ultra thin films on In0.53Ga0.47As for tailoring contact resistivity

E. Skopin , M.I. Richard , L. Rapenne , A. Crisci , E. Blanquet et al.
E-MRS Spring 2017, May 2017, Strasbourg, France
Communication dans un congrès hal-02016907 v1

In situ X-ray studies during the early stage of ZnO Atomic Layer Deposition on InGaAs

E Skopin , L. Rapenne , H. Roussel , J.-L. Deschanvres , A. Crisci et al.
Rayons X & Matière, Nov 2017, Villeneuve d'Ascq, France
Communication dans un congrès hal-02016916 v1

In Situ X-ray Studies of Crystalline Texture and Strain During the Initial Stages of ZnO Atomic Layer Deposition

R. Boichot , L. Tian , A. Claudel , E. Skopin , M.I. Richard et al.
Workshop on synchrotron radiation to study atomic layer deposition, Jun 2016, ALBA synchrotron, Barcelona, Spain
Communication dans un congrès hal-01453376 v1

In-situ synchrotron analysis of the very first ALD growth steps of ZnO on a-SiO2 and c-plane Al2O3

R. Boichot , A. Crisci , S. Lay , E. Blanquet , L. Tian et al.
Workshop RAFALD 2015, Nov 2015, Grenoble, France
Communication dans un congrès hal-02016969 v1

Functionalization of HTCVD Grown Aluminium Nitride

M. Pons , R. Boichot , Florian Mercier , E. Blanquet
International Conference on Semiconductor Materials and Devices (ISSMD-3), 2015, Chennai, India
Communication dans un congrès hal-01138862 v1

In Situ X-Ray Scattering and Optical Substrate Curvature Studies of ZnO Growth by Atomic Layer and Metal Organic Chemical Vapor Deposition

Hubert Renevier , R. Boichot , A. Crisci , L. Tian , Ahmad Chaker et al.
MRS spring meeting, Apr 2015, San Francisco, United States
Communication dans un congrès hal-02016958 v1

CVD of aluminium nitrides for high temperature applications

Michel Pons , Raphael Boichot , Frederic Mercier , Elisabeth Blanquet
International Conference on Crystal Growth (3CG), Nitrides for lighting, Photovoltaics and sensing applications, Dec 2015, Hong Khong, Japan
Communication dans un congrès hal-01677329 v1

CVD of silicon on steels for flexible solar cells

M. Pons , G. Chichignoud , K. Zaidat , E. Blanquet
Indian Conference on Crystal Growth, 2015, Chennai, India
Communication dans un congrès hal-01138863 v1

Combined Effects of Supersaturation and Stress for the Control of AlN Film Quality

Raphael Boichot , Danying Chen , Frederic Mercier , Mikhail Chubarov , Elisabeth Blanquet et al.
International Conference on Metallurgical Coatings and Thin Films (ICMCTF), " Hard Coatings and Vapor Deposition Technology, Apr 2017, San Diego, United States
Communication dans un congrès hal-01677366 v1

Functionalization of Aluminium Nitride Thin Films and Coatings

M. Pons , R. Boichot , Florian Mercier , S. Lay , E. Blanquet
International Conference on Metallurgical Coatings and Thin Films (ICMCTF), " Hard Coatings and Vapor Deposition Technology", 2015, San Diego, United States
Communication dans un congrès hal-01138864 v1

Functionalization of HTCVD Grown Aluminium Nitride

M. Pons , R. Boichot , Florian Mercier , E. Blanquet , S. Lay et al.
3CG Collaborative Conference on Crystal Growth, 2014, Phuket, Thailand
Communication dans un congrès hal-01138861 v1

Various Applications of (Ti,Al)N Thin films Grown from a Vapor Phase

E. Blanquet , Florian Mercier , H. Shimoda , S. Lay , M. Pons
3CG Collaborative Conference on Crystal Growth, 2014, Phuket, Thailand
Communication dans un congrès hal-01138921 v1

Niobium Nitride Thin Films deposited by High Temperature Chemical Vapor Deposition

Florian Mercier , S. Coindeau , S. Lay , A. Crisci , M. Benz et al.
3CG Collaborative Conference on Crystal Growth, 2014, Phuket, Thailand
Communication dans un congrès hal-01138859 v1

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

M. Pons , R. Boichot , N. Coudurier , A. Claudel , E. Blanquet et al.
European Conference on Chemical Vapor Deposition, EUROCVD19, 2013, Varna, Bulgaria
Communication dans un congrès hal-00946648 v1

Chemistry of iodine and aerosol composition in the primary circuit of a nuclear power plant

M. Gouello , H. Mutelle , F. Cousin , S. Sobanska , E. Blanquet
21st International Conference Nuclear Energy for Europe, Sep 2012, Lubiana, Slovenia
Communication dans un congrès hal-00779422 v1

High Temperature Chemical Vapor Deposition of thick (5 to 20 mm) Aluminum nitride layers

E. Blanquet , A. Claudel , S. Lay , R. Boichot , N. Coudurier et al.
International Workshop on crystal growth and characterization of advanced materials and devices., Dec 2012, Chennai, India
Communication dans un congrès hal-00812217 v1

Deposition of nanostructures by Atomic Layer Deposition

E. Blanquet , A. Mantoux , R. Boichot , M. Pons
International Workshop−CVD−Diagnostic−Modeling, Jun 2012, Nancy, France
Communication dans un congrès hal-00812216 v1

HTCVD of silicon on steels for the development of inexpensive solar cells

N. Dechoux , M. Naili , G. Chichignoud , E. Blanquet , Carmen Jiménez et al.
5th International Conference on Functional Materials, ISFM2012, Dec 2012, Perth, Australia. pp.28-30
Communication dans un congrès hal-00947072 v1

Atomic Layer Deposition of TiO2 ultrathin films on 3D substrates for energy applications

Audrey Soum-Glaude , L. Tian , E. Blanquet , V. Brizé , L. Cagnon et al.
MRS 2012, 2012, San Francisco CA, France. pp.63-68, ⟨10.1557/opl.2012.913⟩
Communication dans un congrès hal-00807357 v1

Thermodynamic simulations Applied to Gas-Solid Materials Fabrication Processes

E. Blanquet , I. Nuta , R. Boichot , M. Pons
Twenty Fourth National Seminar on crystal growth, Dec 2012, Chennai, India
Communication dans un congrès hal-00812218 v1

Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication.

E. Blanquet (invitée) , A. Claudel , V. Brizé , R. Boichot , D. Chaussende et al.
International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Communication dans un congrès hal-00692280 v1

SiC and AlN growth processing : experiments and simulation.

M. Pons , D. Chaussende , J.M. Dedulle , R. Boichot , E. Blanquet
International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Communication dans un congrès hal-00692283 v1

Plasma Enhanced Atomic Layer Deposition of ZrO2: A Thermodynamic Approach.

E. Blanquet , D. Monnier , I. Nuta , F. Volpi , B. Doisneau et al.
219th ECS Meeting, May 2011, Montréal, Canada
Communication dans un congrès hal-00692284 v1

Chemistry of iodine and aerosol composition in the primary circuit of a nuclear power plant

M. Gouello , M. Lacoue-Nègre , H. Mutelle , F. Cousin , S. Sobanska et al.
International Congress on Advances in Nuclear Power Plants, May 2011, Nice, France
Communication dans un congrès hal-00639872 v1

Développements de dépôts ALD : expériences et évaluations thermodynamiques

E. Blanquet , I. Nuta , V. Brize , R. Boichot , P. Violet et al.
Matériaux 2010, Oct 2010, NANTES, France
Communication dans un congrès hal-00591214 v1

Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronics

M. Pons , S. Nishizawa , E. Blanquet , R. Boichot , D. Chaussende
Renewable Energy 2010, Jun 2010, Yokohama, Japan
Communication dans un congrès hal-00502036 v1

On the cracks formation in AlN films grown by chlorinated High Temperature Chemical Vapor Deposition.

E. Latu-Romain , A. Claudel , Alexandre Crisci , E. Blanquet , Michel Mermoux et al.
IWN 2010, Sep 2010, TAMPA, United States
Communication dans un congrès hal-00610213 v1

Developments of ALD Processes: Experiments and Thermodynamic Evaluations

E. Blanquet , I. Nuta , V. Brize , R. Boichot , A. Mantoux et al.
218th ECS Meeting, Oct 2010, LAS VEGAS, NV, United States
Communication dans un congrès hal-00591213 v1

Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling

M. Pons , S. Nishizawa , P. Wellmann , E. Blanquet , D. Chaussende et al.
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88
Communication dans un congrès hal-00173481 v1

Chemical Vapour Deposition and Atomic layer Deposition processes of amorphous or nanocrystalline thin films

E. Blanquet , A. Mantoux , M. Pons , C. Vahlas
International Symposium on Metastable, Amorphous and Nanostructured Materials (ISMANAM 2009), Jul 2009, Pékin, China. ⟨10.1016/j.jallcom.2010.03.205⟩
Communication dans un congrès hal-00488402 v1

The ways to deposit amorphous or nanocrystalline material from a vapor phase

E. Blanquet , A. Mantoux , M. Pons
11th International Conference on Advanced Materials (ICAM), Sep 2009, Rio de Janeiro, Brazil
Communication dans un congrès hal-00488887 v1

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)

A. Claudel , D. Chaussende , E. Blanquet , D. Pique , M. Pons
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.987-990
Communication dans un congrès hal-00426590 v1

Experimental and Thermodynamics for the Evaluation of ALD growth processes

E. Blanquet , R. Boichot , C. Chatillon , A. Mantoux , I. Nuta et al.
International Conference on Metallurgical Coatings and Thin Films (ICMCTF) 2009, 2009, United States
Communication dans un congrès hal-00389286 v1

Growth of thick AlN layers by High Temperature CVD

A. Claudel , E. Blanquet , D. Chaussende , M. Audier , D. Pique et al.
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Otsu, Japan. pp.1269-1272
Communication dans un congrès hal-00337372 v1

Experimental ant Thermodynamics for the Evaluation of Atomic Layer Deposition processes.

E. Blanquet , R. Boichot , A. Mantoux , C. Chatillon , I. Nuta et al.
ICMCTF - international Conference Metallurgical Coatings and Thin Films, Apr 2009, SAN DIEGO, United States
Communication dans un congrès hal-00488400 v1

Chemical Vapour Deposition processes of metallic amorphous or nanocrystalline thin films

E. Blanquet , A. Mantoux , M. Pons , C. Vahlas
World Premier Institute, AIMR (Advanced Institute of Materials Research) WPI-EUROPE-INPG on Metallic Glasses, Aug 2009, GRENOBLE, France
Communication dans un congrès hal-00488885 v1

Knudsen cell mass spectrometry applied to the investigation of organometallic precursors vapours

P. Violet , I. Nuta , C. Chatillon , E. Blanquet
EUROCVD, Sep 2007, Netherlands. pp.8813-8817
Communication dans un congrès hal-00196653 v1

High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modeling

E. Blanquet , D. Chaussende , S. Nishizawa , M. Pons
European conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20
Communication dans un congrès hal-00141097 v1

SiC growth : evaluation and modeling

M. Pons , S. Nishizawa , P. Wellmann , E. Blanquet , J. M. Dedulle et al.
MRS Spring Meeting "B- Silicon Carbide – Materials, Processing and Devices", Apr 2006, San Francisco, United States. pp.64-77
Communication dans un congrès hal-00141104 v1

High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

G. Chichignoud , M. Pons , E. Blanquet , D. Chaussende , M. Anikin et al.
International Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States
Communication dans un congrès hal-00149073 v1

Large grain polySiC boules for wafer-bounding

G. Chichignoud , E. Blanquet , M. Anikin , J.M. Bluet , P. Chaudouët et al.
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.71-74
Communication dans un congrès hal-00173118 v1

Oxydation et évaluation de la température d'inflammation de poudres d'UC et d'UN

F. Le Guyadec , S. Joffre , C. Chatillon , E. Blanquet
MATERIAUX 2006, 2006, Dijon, France. a paraitre
Communication dans un congrès hal-00149057 v1

Ion beam analysis of ternary silicides me-Si-N (Me = Re Ta Ti W) thin films used as diffusion barriers in advanced metallization

R. Somatri-Bouamrane , N. Chevarier , A. Chevarier , A.M. Dutron , E. Blanquet et al.
International Symposium on Chemical Vapor Deposition : CDV-XIV and EUROCVD11, Sep 1997, Paris, France. pp.1-8
Communication dans un congrès in2p3-00007487 v1

Growth of polycrystalline SiC thin films by chemical vapor deposition for brain implanted electrodes

Michalis Gavalas , Frédéric Mercier , Jorge Sanchez Espinoza , Clément Hébert , E. Blanquet et al.
ICSCRM2022, Sep 2022, Davos (Suisse), Switzerland
Poster de conférence hal-04827865 v1

New potential synthesis route of molybdenum (oxy)nitride nanosheets by nitriding MoS_2 deposited by Atomic Layer Deposition (ALD)

Julien Patouillard , E. Blanquet , Arnaud Mantoux , Frédéric Mercier , Frederic Gianesello et al.
ALD/ALE 2022, 22nd International Conference on Atomic Layer Deposition, Jun 2022, Ghent (BE), Belgium
Poster de conférence hal-04819526 v1

Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire

Sabine Lay , Frédéric Mercier , Raphaël Boichot , Gael Giusti , Michel Pons et al.
IIB2019, Intergranular and Interphase boundaries in materials, Jul 2019, Paris, France
Poster de conférence hal-02358855 v1

Superconducting properties of NbN thin films deposited by plasma enhanced atomic layer deposition using a metalorganic precursor

Frédéric Mercier , Liang Tian , E. Blanquet , Ivane Bottala-Gambetta , Victor Marchetto et al.
EuroCVD 22-Baltic ALD 16 Conference, Jun 2019, Luxemburg, Luxembourg
Poster de conférence hal-04819554 v1

Caractérisation de couches d’Al2O3 déposées par ALD thermique pour des applications photovoltaïques

Corina Barbos , Alain Fave , Bruno Canut , Philippe Regreny , Claude Botella et al.
JNPV, Nov 2016, Dourdan, France
Poster de conférence hal-02066922 v1

Superconducting properties of NbN thin films deposited by plasma enhanced atomic layer deposition using a metalorganic precursor

Frédéric Mercier , L. Tian , Ivan Bottala , V Marchetto , M Jacquemin et al.
Eurocvd 20, Jul 2015, Sempach, Switzerland
Poster de conférence hal-04757244 v1

Ti-Al-N-Based Hard Coatings: Thermodynamical Background, CVD Deposition, and Properties. A Review

Florent Uny , Elisabeth Blanquet , Frédéric Schuster , Frédéric Sanchette
Jaime Andres Perez Taborda; Alba Avila. Coatings and Thin-Film Technologies, IntechOpen, 2019, ⟨10.5772/intechopen.79747⟩
Chapitre d'ouvrage hal-02283304 v1

Thermodynamics simulations applied to gas-solid materials fabrication processes

E. Blanquet , I. Nuta
Thermodynamics - Fundamentals and its application in science, INTECH, pp.191-214, 2012, 979-953-307-836-5
Chapitre d'ouvrage hal-00824429 v1