- 55
- 22
- 13
- 9
- 1
- 1
- 1
- 1
Emilie Despiau-Pujo
103
Documents
Publications
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 8
- 4
- 3
- 2
- 1
- 1
- 1
- 1
- 1
- 2
- 1
- 6
- 6
- 7
- 11
- 14
- 16
- 14
- 8
- 3
- 9
- 3
- 3
Etude des interactions plasma-surface par dynamique moléculaire : quels apports pour la modélisation des plasmas froids ?2èmes Journées du GDR EMILI, Oct 2023, NANCY, France
Communication dans un congrès
hal-04509431v1
|
|
Atomic-scale simulations of Hx+ ions modification of SiO2 thin films and Si02 pattern flanks for an innovative ONO stack etching process41th International Symposium on Dry Process (DPS 2019), Nov 2019, Hiroshima, Japan
Communication dans un congrès
hal-02337577v1
|
|
Atomic-scale simulations of He and H2 plasma modification of SiO2 thin films for an innovative ONO dielectric stack etching processPlasma Etch Strip in Microtechnology (PESM), Minatec, May 2019, Grenoble, France
Communication dans un congrès
hal-02337587v1
|
|
A brief overview on Molecular Dynamics simulations of plasma-surface interaction in reactive ion etching66th American Vacuum Society (AVS) International Symposium, Oct 2019, Columbus, United States
Communication dans un congrès
hal-02337554v1
|
|
Towards selective etching with nanometric control using remote plasma source236th Electrochemical Society meeting (ECS 2019), Oct 2019, Atlanta, USA, United States
Communication dans un congrès
hal-02324706v1
|
|
Molecular dynamics simulations for a better understanding of plasma-surface interactions34th International Conf. on Phenomena in Ionized Gases (ICPIG), Jul 2019, Sapporo, Japan
Communication dans un congrès
hal-02337568v1
|
|
Atomic-scale simulations of helium plasma modification of SiO2 thin-films for advanced etch processesAVS 65th International Symposium, Oct 2018, Long Beach, United States
Communication dans un congrès
hal-01954929v1
|
|
Plasma solutions for atomic-precision etching: From molecular dynamics simulations to experiments40th International Symposium on Dry Process (DPS 2018), Nov 2018, Nagoya, Japan
Communication dans un congrès
hal-01942798v1
|
|
Plasma solutions for atomic-precision etching: From atomistic simulations to experiments40th International Symposium on Dry Process (DPS 2018), Nov 2018, Nagoya, Japan
Communication dans un congrès
hal-01954916v1
|
|
Towards atomic scale control of plasma processes: application to grapheneThe 10th EU-Japan Joint Symposium on Plasma Processing, 2017, Okinawa, Japan
Communication dans un congrès
hal-01891303v1
|
|
Atomic-scale simulations of low-damage plasma etching processes82nd IUVSTA Workshop on Plasma-based Atomic Layer Processes, Dec 2017, Okinawa, Japan
Communication dans un congrès
hal-01891290v1
|
|
New trends in Plasma Technologies43rd Conference on Micro and Nano Engineering (MNE), Sep 2017, Braga, Portugal
Communication dans un congrès
hal-01891286v1
|
|
Atomistic Simulations of H2 Plasma Modification of SiN Thin-Films for Advanced Etch ProcessesAVS 64th International Symposium, Tampa (USA), Oct 29-Nov 3, 2017, Oct 2017, tampa, United States
Communication dans un congrès
hal-01929202v1
|
|
Ultra-high selective etching in remote plasmas: application to smart etch processesPESM 2017 (Plasma Etch and Strip in Microtechnology), 2017, Louvain, Belgium
Communication dans un congrès
hal-01891297v1
|
|
Ion-induced damage and etching in reactive plasmas: Modelling and experimental support1st EUCASS Aerospace Thematic Workshops (ATW), Sep 2016, Aussois, France
Communication dans un congrès
hal-01882808v1
|
|
ICP plasmas treatment of 2D materials: example of graphenePlasma Etch Strip in Microtechnology (PESM), May 2016, grenoble, France
Communication dans un congrès
hal-01882928v1
|
|
Atomistic Simulations of He Plasma Modification of Si/SiN Thin-Films for Advanced Etch ProcessesAVS 63nd International Symposium, Nov 2016, Nashville, United States
Communication dans un congrès
hal-01882922v1
|
|
H2 Plasma Interaction with CVD GrapheneAVS 63nd International Symposium, Nov 2016, Nashville, United States
Communication dans un congrès
hal-01882915v1
|
|
Roughness generation during Si etching in Cl2 pulsed plasmasPlasma Etch and Strip in Microtechnologies conference, May 2016, Grenoble, France
Communication dans un congrès
hal-02339971v1
|
|
Plasma solutions for nanometric-precision etching: insights from MD simulationsPlasma Etch Strip in Microtechnology (PESM), May 2016, Grenoble, France
Communication dans un congrès
hal-01882912v1
|
|
Alternative solutions for nm-precision etching: H2 Plasmas Modification of Si/ SiN thin-filmsAVS 63nd International Symposium, Nov 2016, Nashville, United States
Communication dans un congrès
hal-01882917v1
|
|
Atomistic simulations of He plasma modification of Si thin-films for advanced etch processesPlasma Etch Strip in Microtechnology (PESM), May 2016, grenoble, France
Communication dans un congrès
hal-01882933v1
|
|
Plasmas interaction with graphene surfacesFusion Frontiers and Interfaces Workshop, May 2015, York, United Kingdom
Communication dans un congrès
hal-01878411v1
|
|
Plasmas interaction with graphene surfaces22nd International Symposium on Plasma Chemistry (ISPC), Jul 2015, Antwerp, Belgium
Communication dans un congrès
hal-01877972v1
|
|
Potential Solutions for Atomic Precision EtchingAVS 62nd International Symposium, Oct 2015, San José, United States
Communication dans un congrès
hal-01877989v1
|
|
Molecular dynamics simulations of plasma-surface interactions for advanced etch processes42nd European Physical Society (EPS) Conference on Plasma Physics, Jun 2015, Lisbonne, Portugal
Communication dans un congrès
hal-01877976v1
|
|
Towards nanoscale plasma etching precision: MD simulations of Si-Cl interactionsAVS 62nd International Symposium, Oct 2015, San José, United States
Communication dans un congrès
hal-01878118v1
|
|
Measuring IVDF through high-aspect holes in pulsed ICP plasma68th Gaseous Electronics Conference (GEC), Oct 2015, Honolulu, United States
Communication dans un congrès
hal-01878046v1
|
|
Producing ion waves from acoustic pressure waves in pulsed ICP: Modelling vs. Experiments68th Gaseous Electronics Conference (GEC), Oct 2015, Honolulu, United States
Communication dans un congrès
hal-01878115v1
|
|
Potential Solutions for Atomic Precision EtchingSPIE Advanced Etch Technology for Nanopatterning IV, Feb 2015, San José, United States
Communication dans un congrès
hal-01878051v1
|
|
Measuring IVDF through high−aspect holes in pulsed ICP plasmas68th GEC / ICRP−9, Oct 2015, Honolulu, United States
Communication dans un congrès
hal-01878113v1
|
|
RFEA analyzers to measure IVDF through high−aspect holes in pulsed ICP plasmasFrontiers in Low Temperature Plasma Diagnostics XI, 2015, Porquerolles, France
Communication dans un congrès
hal-01878109v1
|
|
Plasma processing of graphene surfacesFusion Frontiers and Interfaces Workshop, May 2015, York, United Kingdom
Communication dans un congrès
hal-01877980v1
|
|
MD simulations of chlorine plasmas interaction with ultrathin Si films for advanced etch processes2014 Silicon Nanoelectronics Workshop (SNW), Jun 2014, Honolulu (USA), United States
Communication dans un congrès
hal-01798393v1
|
|
Pulsed Cl2/Ar ICP plasmas processing : 0D Model vs. ExperimentsPlasma Etch and Strip in Microelectronics (PESM), May 2014, grenoble, France
Communication dans un congrès
hal-01798407v1
|
|
MD simulations of Cl2 plasmas interaction with ultrathin Si films for advanced etch processes”Plasma Etch and Strip in Microelectronics (PESM), May 2014, Grenoble (France), France
Communication dans un congrès
hal-01798396v1
|
|
Molecular Dynamics simulations of hydrogen plasma-graphene interactionPlasma Etch and Strip in Microelectronics (PESM), May 2014, Grenoble (France), France
Communication dans un congrès
hal-01798403v1
|
|
Pulsed Plasmas for etching in micro and nanoelectronicsPlasma Nanoscience Conference, Mar 2014, Dublin, Ireland
Communication dans un congrès
hal-02338129v1
|
|
Producing ion waves from acoustic pressure waves in pulsed inductive plasmasPlasma Etch and Strip in Microelectronics (PESM), May 2014, Grenoble, France
Communication dans un congrès
hal-01798411v1
|
|
Optical and electrical diagnostics in chlorine based pulsed plasmas of an industrial silicon etching reactor1st International Middle-East Plasma Science, Turkey, Apr 2014, Istambul, Turkey
Communication dans un congrès
hal-02338122v1
|
|
Potential Solutions for Atomic Precision EtchingSematech Workshop on Atomic Layer Etch & Clean technology, Apr 2014, San Francisco (USA), United States
Communication dans un congrès
hal-01798418v1
|
|
Molecular Dynamics simulations of hydrogen plasma – graphene interactionPlasma Etch and Strip in Microelectronics (PESM), 6th International Workshop, May 2014, grenoble, France
Communication dans un congrès
hal-01798558v1
|
|
Cleaning Graphene with H2 plasmas: What can be learnt from Quantum/Classical MD simulations?European Workshop on Epitaxial Graphene (EWEG), Jun 2014, Primosten, Croatia
Communication dans un congrès
hal-01798516v1
|
|
MD simulations of chlorine plasmas interaction with ultrathin silicon films for advanced etch processes.Plasma Etch and Strip in Microelectronics (PESM), 6th International Workshop, May 2014, grenoble, France
Communication dans un congrès
hal-01798524v1
|
|
Pulsed ICP plasmas processing: 0D Model vs. ExperimentsPlasma Etch and Strip in Microelectronics (PESM), 6th International Workshop, May 2014, grenoble, France
Communication dans un congrès
hal-01798532v1
|
|
Silicon etching using CW, synchronized pulsed and bias pulsed Cl2 plasmaAVS 2014, , 2014, Baltimore, United States
Communication dans un congrès
hal-01798348v1
|
|
Hydrogen plasmas processing of graphene61th American Vacuum Society (AVS) International Symposium, Nov 2014, baltimore, United States
Communication dans un congrès
hal-01798382v1
|
|
Optical and Electrical Diagnostics of Pulsed Plasmas Etching Processes11th Technological Plasma Workshop, Dec 2013, York, United Kingdom
Communication dans un congrès
hal-02338133v1
|
|
Time-resolved Optical and Electrical Diagnostics of Pulsed Plasmas EtchingAmerican Vacuum Society 60th International Symposium, Oct 2013, Long beach, United States
Communication dans un congrès
hal-00904432v1
|
|
Pulsed ICP plasmas processing : A combined modelling and experimental study31st International Conference on Phenomena in Ionized Gases (ICPIG), Jul 2013, Granada, Spain
Communication dans un congrès
hal-00925794v1
|
|
Pulsed plasmas for etching in microelectronicsJournées du réseau plasma froids, 2013, La Rochelle, France
Communication dans un congrès
hal-00925769v1
|
|
Molecular Dynamics Simulations for Hydrogen Plasma Processing of GrapheneAmerican Vacuum Society 60th International Symposium, Oct 2013, Long beach, United States
Communication dans un congrès
hal-00904430v1
|
|
Molecular Dynamics Simulation for Hydrogen Plasma Processing of GrapheneAVS 60th International Symposium, Oct 2013, Long Beach, United States
Communication dans un congrès
hal-00925810v1
|
|
Optical and Electrical Diagnostics of Pulsed Plasmas Etching ProcessesAVS 60h international symposium, Oct 2013, Long Beach, United States
Communication dans un congrès
hal-00925763v1
|
|
MD simulations of H2 plasma-graphene interactionsPlasma Etch and Strip in Microelectronics, Mar 2013, leuven, Belgium
Communication dans un congrès
hal-00860933v1
|
|
MD Simulations of Pulsed Chlorine Plasmas Interaction with Ultrathin Silicon Films for Advanced Etch ProcessesAmerican Vacuum Society 60th International Symposium, Oct 2013, Long beach, United States
Communication dans un congrès
hal-00904431v1
|
|
Pulsed plasma processing: A combined modelling and experimental study31st International Conference on Phenomena in Ionized Gases (ICPIG), Jul 2013, Granada, Spain
Communication dans un congrès
hal-00904428v1
|
|
Pulsed ICP chlorine plasmas : Numerical simulations versus Experiments4th Workshop on Radio Frequency Discharges, May 2013, giens, France
Communication dans un congrès
hal-00860934v1
|
|
Pulsed plasmas for etching at the nanoscaleJournées Nationales des Technologies Émergentes, May 2013, Evian les bains, France
Communication dans un congrès
hal-00860922v1
|
|
MD simulations of chlorine plasmas interaction with ultrathin silicon films for advanced etch processesAVS 2013, Oct 2013, Long beach, United States
Communication dans un congrès
hal-00919179v1
|
|
MD simulations of hydrogen plasma interaction with graphene surfaces65th GEC, Oct 2012, Austin, United States
Communication dans un congrès
hal-00762119v1
|
|
2D fluid simulations of acoustic waves in pulsed ICP discharge: Comparison with experiments65th Gaseous Electronics Conference (GEC), Oct 2012, austin, United States
Communication dans un congrès
hal-00925814v1
|
|
Molecular dynamics simulations of hydrogen plasma interaction with graphene11th APCPST, Oct 2012, Kyoto, Japan
Communication dans un congrès
hal-00762110v1
|
|
MD simulations of hydrogen plasma interaction with graphene surfaceAVS 59th Symposium, Oct 2012, Tampa, United States
Communication dans un congrès
hal-00808676v1
|
|
Molecular dynamics simulations of hydrogen plasmas interaction with graphene11th Asia Pacific Conference on Plasma Science & Technology (APCPST), Oct 2012, kyoto, Japan
Communication dans un congrès
hal-00925797v1
|
|
2D fluid simulations of acoustic waves in pulsed ICP discharges: Comparison with experiments65th GEC, Oct 2012, Austin, United States
Communication dans un congrès
hal-00762116v1
|
|
Time resolved ion flux measurement in pulsed ICP plasmasTampa, Oct 2012, Tampa, United States
Communication dans un congrès
hal-00762123v1
|
|
PECVD of GeTe for next generation of non volatile memory18th International Colloquium on Plasma Processes (CIP), Jul 2011, rennes, France
Communication dans un congrès
hal-00925819v1
|
|
PE-MOCVD of GeTe material for Phase Change Memory58th National Symposium AVS, Oct 2011, Nashville, United States
Communication dans un congrès
hal-00650192v1
|
|
PE-MOCVD of GeTe materials for Phase Change Memory ApplicationsAVS 58th International Symposium, Nashville, USA, Oct 30-Nov 4, 2011, Oct 2011, nashville, United States
Communication dans un congrès
hal-00925816v1
|
|
Modelling of chlorine inductive dischargesInternational Conference on Plasma and Nanotechnology (ICPLANTS), Mar 2010, Nagoya, Japan
Communication dans un congrès
hal-02573326v1
|
|
Modelling of chlorine inductive discharges25th Summer School and International Symposium on the Physics of Ionized Gases, Aug 2010, Donji Milanovac, Serbia
Communication dans un congrès
hal-02573325v1
|
|
Ar Ion Sputtering of GaAs Studied by Molecular Dynamics Simulation and Laser Spectroscopy of Ga Atoms in the Gas Phase55th International AVS Symposium & Topical Conferences, Oct 2008, boston, United States
Communication dans un congrès
hal-00400658v1
|
Electron densities and temperatures in a Cl2/Ar ICPGaseous Electronics Conference, Oct 2010, Paris, France. 2010
Poster de conférence
hal-02611281v1
|
|
Inductive plasmas in Cl2/Ar :Comparison of hybrid model results with experimental measurementsAVS Symposium, Oct 2010, Albuquerque, New Mexico, United States. 2010
Poster de conférence
hal-02611282v1
|
|
Inductive plasmas in Cl2/Ar : Comparison of hybrid model results with experimental measurementsESCAMPIG, Jul 2010, Novi Sad, Serbia. 2010
Poster de conférence
hal-02611280v1
|
|
Plasma inductif en Cl2/Ar : comparaison entre simulations hybrides et expériencesCongres de la Division Plasma du SFP, May 2010, Bordeaux, France. 2010
Poster de conférence
hal-02611278v1
|
Procédé d’exfoliation de graphèneFrance, Patent n° : FR3059316A1 / WO2018099759A1. 2018
Brevet
hal-01946826v1
|
|
Procédé d’exfoliation de graphèneFrance, N° de brevet: DD17214 VR. 2017
Brevet
hal-01930512v1
|
|
Atomic precision etching by dynamic control of the reactive layer thickness in reactive plasmasUnited States, Patent n° : US 2015/0228495 A1. 2015
Brevet
hal-01877345v1
|
|
Etching of III-V semiconductors in inductively coupled chlorine plasmasComputer Science [cs]. Ecole Polytechnique X, 2009. English. ⟨NNT : ⟩
Thèse
pastel-00005582v1
|