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Eric Joubert

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Publications

PHM method for detecting degradation of GaN HEMT ON resistance, application to power converter

H. Boulzazen , Chawki Douzi , Eric Joubert , Pascal Dherbécourt , Moncef Kadi
e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100060. ⟨10.1016/j.prime.2022.100060⟩
Journal articles hal-03872112v1

A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications

Chawki Douzi , Moncef Kadi , Moncef Kadi , Pascal Dherbécourt , Mohamed Akram Besserour
Microelectronics Reliability, 2022, 138, pp.114777. ⟨10.1016/j.microrel.2022.114777⟩
Journal articles hal-03882052v1
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Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating

Niemat Moultif , Sébastien Duguay , O. Latry , M. Ndiaye , Eric Joubert
Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩
Journal articles hal-03469148v1

Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress

Niemat Moultif , Olivier Latry , Eric Joubert , Mohamed Ndiaye , Christian Moreau
IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩
Journal articles hal-03174499v1

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

Wadia Jouha , Mohamed Lamine Masmoudi , Ahmed El Oualkadi , Eric Joubert , Pascal Dherbécourt
IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩
Journal articles hal-03174373v1

In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Mohamed Lamine Masmoudi , Joubert Eric
IET Circuits, Devices & Systems, 2020, 14 (2), pp.222-228. ⟨10.1049/iet-cds.2018.5509⟩
Journal articles hal-04355283v1
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S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

Niemat Moultif , O. Latry , Mamadou Ndiaye , Tristan Neveu , Eric Joubert
Microelectronics Reliability, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩
Journal articles hal-02380186v1

An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET

Wadia Jouha , Pascal Dherbécourt , Ahmed El Oualkadi , Eric Joubert , Mohamed Lamine Masmoudi
International Journal of Information Science & Technology, 2019, ⟨10.57675/IMIST.PRSM/ijist-v3i1.44⟩
Journal articles hal-02295925v1

Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

Niemat Moultif , Andres Echeverri , Dominique Carisetti , O. Latry , Eric Joubert
IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩
Journal articles hal-02614080v1

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi
IEEE Transactions on Power Electronics, 2018, 33 (11), pp.9130-9133. ⟨10.1109/TPEL.2018.2822939⟩
Journal articles hal-02177905v1

Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures

Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry
Microelectronics Reliability, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩
Journal articles hal-01765955v1

Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures

Niemat Moultif , Alexis Divay , Eric Joubert , O. Latry
Engineering Failure Analysis, 2017, 81, pp.69 - 78. ⟨10.1016/j.engfailanal.2017.07.014⟩
Journal articles hal-01766076v1

Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy

Niemat Moultif , Eric Joubert , O. Latry
Advanced Electromagnetics, 2016, 5 (3), pp.20. ⟨10.7716/aem.v5i3.380⟩
Journal articles hal-02177964v1

Temperature and Dilatation Estimation for Modern Semiconductor Devices

Eric Joubert , O. Latry , Jean-Philippe Roux
Sensors & Transducers., 2015, 184 (1), pp.130-135
Journal articles hal-02178029v1

Comparison of different feedback signals used in one stage PMD compensators for different modulation formats

Guillaume Ducournau , O. Latry , E. Joubert , M. Ketata
IEEE Transactions on Communications, 2008, 56, pp.1722-1728. ⟨10.1109/TCOMM.2008.060476⟩
Journal articles hal-00356948v1
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The chemistry of DeNOx reactions over Pt/Al2O3: the oxime route to N2 or N2O.

E. Joubert , Xavier Courtois , Patrice Marecot , Christine Canaff , Daniel Duprez
Journal of Catalysis, 2006, 243 (2), pp.252-262. ⟨10.1016/j.jcat.2006.07.018⟩
Journal articles hal-00289455v1

Magnetic susceptibility of P+N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised

M. Abdelaoui , M. Idrissi-Benzohra , E. Joubert , M. Benzohra , F. Olivié
Materials Science and Engineering: B, 2003, 102 (1-3), pp.370-375. ⟨10.1016/S0921-5107(02)00623-2⟩
Journal articles hal-02138087v1

SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

Niemat Moultif , Eric Joubert , Olivier Latry
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩
Conference papers hal-02181679v1

Temperature estimation of high-electron mobility transistors AlGaN/GaN

O. Latry , Eric Joubert , Tristan Neveu , Niemat Moultif , Mohamed Ndiaye
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩
Conference papers hal-02131183v1

An Extraction Method of SiC Power MOSFET Threshold Voltage

Ahmed Eloualkaki , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi , Wadia Jouha
3rd International Conference on Electrical and Information Technologies, Nov 2017, Rabat, Morocco. ⟨10.1007/978-3-030-05276-8_2⟩
Conference papers hal-02295944v1

Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures

Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry
2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩
Conference papers hal-01765953v1

A new extraction method of SiC power MOSFET threshold voltage using a physical approach

Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi
2017 International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, France. pp.1-6, ⟨10.1109/EITech.2017.8255289⟩
Conference papers hal-02177925v1

Static behavior analysis of silicon carbide power MOSFET for temperature variations

Wadia Jouha , Pascal Dherbécourt , Eric Joubert , Ahmed El Oualkadi
2016 International Conference on Electrical and Information Technologies (ICEIT), May 2016, Tangiers, Morocco. pp.276-280, ⟨10.1109/EITech.2016.7519605⟩
Conference papers hal-02173722v1