Estelle LAUGA-LARROZE
- Reliable RF and Mixed-signal Systems (TIMA-RMS)
Présentation
Publications
Publications
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28 nm FD-SOI 4 K RF LNA design using DC transistor characterization measurementsLATS 2025 - IEEE 26th Latin American Test Symposium, Mar 2025, San Andres, Colombia. ⟨10.1109/LATS65346.2025.10963946⟩ |
Design Methodology for Wideband Class-E Sequential Load Modulated Balanced Amplifiernewcas, Jun 2025, Paris, France. pp.401-404, ⟨10.1109/NewCAS64648.2025.11106994⟩ |
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Extension of Quasi-Load Insensitive Class-E Doherty Operation with Complex Load Trajectories19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME 2024), Jun 2024, Larnaca, Cyprus. ⟨10.1109/PRIME61930.2024.10559702⟩ |
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A New Control Law for N-Path Mixer Switches Enhancing Harmonic RejectionIFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC 2024), Oct 2024, Tanger, Morocco |
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LUT-based design of a cryogenic cascode LNA with simultaneous noise and power matchingNEWCAS 2024 - 22nd IEEE International NEWCAS Conference, Jun 2024, Sherbrooke, Canada. pp.65-69, ⟨10.1109/NEWCAS58973.2024.10666334⟩ |
Making Digital N-Path Mixers38th Conference on Design of Circuits and Integrated Systems (DCIS 2023), Nov 2023, Malaga, Spain |
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Integrated test circuit for off-state dynamic drain stress evaluationIRPS 2023 - IEEE International Reliability Physics Symposium, Mar 2023, Monterey, United States. pp.10.1109/IRPS48203.2023.10117885, ⟨10.1109/IRPS48203.2023.10117885⟩ |
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Noise modeling using look-up tables and DC measurements for cryogenic applicationsVLSI-SoC 2023 - 31st IFIP/IEEE International Conference on Very Large Scale Integration, Oct 2023, Sharjah, United Arab Emirates. ⟨10.1109/VLSI-SoC57769.2023.10321896⟩ |
Self-Timed Ring Oscillators for Non-Overlapping and Overlapping Phases Synthesis20th IEEE International NEWCAS Conference (NEWCAS 2022), Jun 2022, Québec City, Canada. ⟨10.1109/NEWCAS52662.2022.9901390⟩ |
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Special Session on RF/5G TestIEEE European Test Symposium (ETS 2022), May 2022, Barcelona, Spain. pp.1-9, ⟨10.1109/ETS54262.2022.9810461⟩ |
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Feature selection techniques for indirect test and statistical calibration of mm-wave integrated circuits27th European Test Symposium (ETS 2022), May 2022, Barcelona, Spain |
Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier ApplicationsIEEE International Reliability Physics Symposium (IRPS 2022), IEEE, Mar 2022, Dallas, United States. pp.4B.2-1-4B.2-6, ⟨10.1109/IRPS48227.2022.9764535⟩ |
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Design methodology of a 28 nm FD-SOI Capacitive Feedback RF LNA based on the ACM Model and Look-up Tables8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022), May 2022, Udine, Italy |
Mélangeur N-Path à 5 chemins rejetant jusqu'à l'harmonique 8 inclus pour récepteurs multistandards basse consommation22èmes Journées Nationales Microondes (JNM 2022), Jun 2022, Limoges, France |
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N-Path Mixer with Wide Rejection Including the 7 th Harmonic for Low Power Multi-standard Receivers20th IEEE Interregional NEWCAS Conference (NEWCAS 2022), IEEE, Jun 2022, Quebec City, Canada. pp.256-260, ⟨10.1109/NEWCAS52662.2022.9901392⟩ |
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Improved π-Delayed Harmonic Rejection N-Path Mixer for Low Power Consumption and Multistandard Receiver18th IEEE International New Circuits and Systems Conference (NEWCAS 2020), IEEE, Jun 2020, Montreal, Canada. ⟨10.1109/newcas49341.2020.9159792⟩ |
A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applicationsIEEE MTT-S International Conference on Microwaves for Intelligent Mobility, ICMIM 2020, Nov 2020, Linz, Austria. 4 p., ⟨10.1109/ICMIM48759.2020.9299098⟩ |
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Low Complexity Architecture of N-Path Mixers for Low Power Application17th IEEE International New Circuits and Systems Conference (NEWCAS 2019), IEEE, Jun 2019, Munich, Germany. ⟨10.1109/newcas44328.2019.8961234⟩ |
Yield Recovery of mm-Wave Power Amplifiers using Variable Decoupling Cells and One-Shot Statistical CalibrationIEEE International Symposium on Circuits and Systems (ISCAS 2019), May 2019, Sapporo, Japan. pp.1-5 |
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On the use of causal feature selection in the context of machine-learning indirect testDesign, Automation & Test in Europe Conference & Exhibition (DATE 2019), Mar 2019, Florence, Italy. pp.276-279 |
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On the use of causal feature selection in the context of machine-learning indirect test2019 Design, Automation & Test in Europe Conference & Exhibition (DATE), Mar 2019, Florence, France. pp.276-279 |
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Architectures optimisées de mélangeurs N-Path en vue d’applications basse consommation21èmes journées nationales micro-ondes, JNM’19, May 2019, CAEN, France |
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A 3.2–3.6GHz SOI-LDMOS Dual-Input Doherty Power AmplifierIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S 2019), Oct 2019, San Jose (CA), United States. ⟨10.1109/S3S46989.2019.9320747⟩ |
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Efficient generation of data sets for one-shot statistical calibration of RF/mm-wave circuitsInternational Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD 2019), Jul 2019, Lausanne, Switzerland. pp.17-20, ⟨10.1109/SMACD.2019.8795238⟩ |
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Assisted test generation strategy for non-intrusive machine learning indirect test of millimeter-wave circuits23rd IEEE European Test Symposium (ETS'2018), May 2018, Bremen, Germany. pp.1-6, ⟨10.1109/ETS.2018.8400689⟩ |
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Reliability Assessment of 4GSP/s Interleaved SAR ADC2018 IEEE International Reliability Physics Symposium, Mar 2018, Burlingame, United States |
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A fully <i>in-situ</i> reflectometer in G band in 55 nm SiGe BiCMOSINMMIC 2018 - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits, Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430015⟩ |
Output matching network design for broadband class B/J power amplifier2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2017, Giardini Naxos - Taormina, Italy. pp.41-44 |
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Conception en vue du test d’un amplificateur de puissance à 60 GHzJournées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM'17), Nov 2017, Strasbourg, France |
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A D-band tuner for in-situ noise and power characterization in BiCMOS 55 nm2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, United States. pp.103-106 |
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Réseau d'adaptation pour amplificateur de puissance large bande en classe B/J continueGDR ONDES, Mar 2017, Grenoble, France |
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A G band frequency quadrupler in 55 nm BiCMOS for bist applications2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), Apr 2017, Graz, Austria. pp.1-4, ⟨10.1109/INMMIC.2017.7927310⟩ |
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A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, AZ, United States. pp.60-63, ⟨10.1109/SIRF.2017.7874371⟩ |
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Noise parameters of SiGe HBTs in mmW range: towards a full in situ measurement extraction2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-4, ⟨10.1109/ICNF.2017.7985944⟩ |
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Premier Système de Mesure Petit Signaux Deux Ports Complètement Intégré en Bande GJournées Nationales Micro-ondes, May 2017, Saint Malo, France |
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Conception d'un doubleur de fréquence +4 dBm en technologie BiCMOS 55 nm en bande WJournées Nationales du Réseau Doctoral en Micro-nanoélectronique, May 2016, Toulouse, France |
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A 700MHz output bandwidth, 30dB dynamic range, common-base mm-wave power detector2015 IEEE MTT-S International Microwave Symposium (IMS2015), May 2015, Phoenix, United States. pp.1-3 |
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Conception d'un quadrupleur de fréquence en technologie BiCMOS 55 nm en bande GGDR ONDES, Oct 2015, Lyon, France |
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Atténuateur Actif pour les Applications en Bande D réalisé en technologie BiCMOS 55 nm19èmes Journées Nationales Micro-ondes, Jun 2015, Bordeaux, France |
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A 135-150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, Oct 2015, Boston, United States. pp.186-189 |
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Efficiency enhancement using adaptive bias control for 60GHz power amplifier2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), Jun 2015, Grenoble, France. pp.1-4 |
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Sub-threshold based power detector for low-cost millimeter-wave applications2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. pp.1-4 |
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Comparison between MOS and bipolar mm-wave power amplifiers in advanced SiGe technologies2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, Sep 2014, Coronado, United States. pp.159-162 |
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Fully Integrated Power Management Unit (PMU) Using NMOS Low Dropout RegulatorsInternational Conference on Computer as a Tool, EUROCON2013, Jul 2013, Zagreb, Croatia. pp.1-4 |
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High Power Supply Rejection Wideband Low-Dropout Regulator5th Annual International Energy Conversion Congress and Exhibition for the Asia/Pacific region of the world, ECCE Asia2013, Jun 2013, Melbourne, Australia. pp.1-4 |
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Conception d'un LDO PMOS à forte réjection sur une large bande de fréquence16èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique, Jul 2013, Grenoble, France. pp.JNRDM13 |
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Traitement de bas niveau intégré : Mise en oeuvre d'une adaptation aux conditions lumineuses dans un capteur d'images CMOS22ème colloque GRETSI, Sep 2009, Dijon, France |
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A Standard 3.5T CMOS Imager including a Light Adaptive System for Integration Time OptimisationConference on Design and Architectures for Signal and Image Processing (DASIP'08), Nov 2008, Bruxelles, Belgium. pp.57-60 |
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A High Dynamic Range CMOS Imager with a Light Adaptive System and Digital OutputsWorkshop on "Image Sensors analog and digital on-chip processing", Nov 2007, Toulouse, France |
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An on-pixel FPN reduction method for a high dynamic range CMOS imager33rd European Solid-State Circuits Conference (ESSCIRC'07), Sep 2007, Munich, Germany. pp.332-335 |
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A 120dB CMOS imager with a light adaptive system and digital outputs2nd Conference on Ph.D. Research in Microelectronics and Electronics (PRIME’06), 2006, Otranto, Italy. pp.269-272 |
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A high dynamic range CMOS image sensor with on-chip FPN reduction methodXXI Conference on Design of Circuits and Integrated Systems (DCIS’06), 2006, Barcelone, Spain. pp.22 |
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A 100dB dynamic range CMOS image sensor with global shutter13th IEEE International Conference on Electronics, Circuits and Systems (ICECS’06), 2006, Nice, France. pp.1133-1136 |
A Standard 3.5T CMOS Imager Including a Light Adaptive System for Integration Time OptimizationG. Cogniat et al. Algorithm-Architecture Matching for Signal and Image Processing, Springer, pp.81-93, 2010, Lecture Notes in Electrical Engineering, 2011, Volume 73, Part 2, ⟨10.1007/978-90-481-9965-5_4⟩ |
Mélangeur à N Chemins à réjection d’harmoniquesFrance, N° de brevet: FR3125934A1. 2023 |
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Contribution à la conception de capteurs de vision CMOS à grande dynamiqueMicro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2007. Français. ⟨NNT : ⟩ |