
Fournel Frank
Présentation
Frank Fournel is 52 years old. He graduated from the "Ecole Supérieure de Physique et de Chimie Industrielle de la ville de Paris” (ESPCI) with a master in “Materials science” (thin layer option). He got his PhD in 2001 for his work in CEA Grenoble on the use of molecular bonding to elaborate twisted substrate in order to drive a self-positioning nanostructure growth. Just after this, he has been employed by CEA in the thin film and circuit layers transfer laboratory. His main focus is on the fundamental understanding of the direct bonding and its application in thin layer transfer technique and substrate engineering. Beside this, he has been involved or driven many international project with CEA industrial partners (STmicroelectronic, Alcatel, SOITEC, Aledia, Intel,…) which gave him the advantage to drive simultaneously academic research and applicative one. He is now the head of the bonding technology engineering in LETI. He is now also involved in metallic bonding (direct, eutectic or thermo-compression), in anodic bonding and in polymer bonding (permanent or temporary) and covalent bonding (SAB). His focus concerns now also all the 3D applications including temporary bonding for instance for Si interposer or including Cu/Cu hybrid bonding for high pitch interconnexions. In addition to all the wafer to wafer bonding approaches, he also study deeply the die to wafer bonding when direct bonding is used for photonic application or 3D one. He was involved in the SOI conference board for 3 years and he is now a board member of the international ECS Wafer Bonding Symposium conference as well as the International Wafer’Bond conference and LTB-3D. He has 218 international publications, 126 deposited patents and participated to two book chapters in 2025. He passed his HDR in 2009. He has been nominated CEA Senior Expert in 2010, CEA International Expert in 2014. He his French Research director since 2021. He is CEA Fellow since 2023.
Compétences
Publications
Publications
Ultra low temperature hybrid bonding: morphological and electrical characterizations2024 IEEE 10th Electronics System-Integration Technology Conference (ESTC), Sep 2024, Berlin, Germany. ⟨10.1109/ESTC60143.2024.10712151⟩
Communication dans un congrès
cea-04924735
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Fine pitch Nb-Nb Direct Bonding for quantum applications2024 IEEE 74th Electronic Components and Technology Conference (ECTC), May 2024, Denver, United States. pp.441-446, ⟨10.1109/ECTC51529.2024.00076⟩
Communication dans un congrès
cea-04758586
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Characterization and mitigation of local wafer deformations introduced by direct wafer-to-wafer bondingNovel Patterning Technologies 2024, Feb 2024, San Jose, United States. pp.1295606, ⟨10.1117/12.3010477⟩
Communication dans un congrès
cea-04769554
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Towards 200 mm 2D materials transfer: Wafer scale characterizations during 2D materials transfer onto temporary substrate.2024 MRS Fall Meeting, Dec 2024, BOSTON, United States
Communication dans un congrès
cea-04768415
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Copper Microstructure Optimization for Fine Pitch Low Temperature Cu/SiO 2 Hybrid Bonding2024 IEEE 74th Electronic Components and Technology Conference (ECTC), May 2024, Denver, United States. pp.631-636, ⟨10.1109/ECTC51529.2024.00105⟩
Communication dans un congrès
cea-04758477
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3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixelIEDM 2023 - IEEE International Electron Devices Meeting, Dec 2023, San Francisco, United States. ⟨10.1109/IEDM45741.2023.10413864⟩
Communication dans un congrès
cea-04540443
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Integration and process challenges of self assembly applied to die-to-wafer hybrid bondingECTC 2023 - IEEE 73rd Electronic Components and Technology Conference, May 2023, Orlando, United States. pp.1397-1402, ⟨10.1109/ECTC51909.2023.00239⟩
Communication dans un congrès
hal-04757847
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Enabling layer transfer and back-side power delivery network applications by wafer bonding and scanner correction optimizationsMetrology, Inspection, and Process Control XXXVII, Feb 2023, San Jose, United States. pp.76, ⟨10.1117/12.2657422⟩
Communication dans un congrès
cea-04755920
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Large Diameter Epi-Ready InP on Si (InPOSi) SubstratesInternational Conference on Compound Semiconductor Manufacturing Technology, May 2023, Orlando, United States
Communication dans un congrès
hal-04624561
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Stressed Si/Si homo-structures manufacturing using surface activated bonding in temperatureWaferBond’22 - The International Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration, Oct 2022, Schmalkalden, Germany
Communication dans un congrès
cea-04613733
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Caractérisation acoustique de l’énergie de collage direct16ème Congrès Français d'Acoustique, CFA2022, Société Française d'Acoustique; Laboratoire de Mécanique et d'Acoustique, Apr 2022, Marseille, France
Communication dans un congrès
hal-03848159
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10 μm and 5 μm Die-to-Wafer Direct Hybrid Bonding2022 IEEE 9th Electronics System-Integration Technology Conference (ESTC), Sep 2022, Sibiu, Romania. pp.31-38, ⟨10.1109/ESTC55720.2022.9939476⟩
Communication dans un congrès
cea-04521796
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AlGaInAs Multi-Quantum Well Laser Array on Silicon Achieved by InP-Seed-Bonding and MOVPE Selective Area Growth2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930433⟩
Communication dans un congrès
hal-04627233
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Engineered SiC materials for power technologiesICICDT 2022 - 2022 International Conference on IC Design and Technology, Sep 2022, Hanoi, Vietnam. pp.55-56, ⟨10.1109/ICICDT56182.2022.9933092⟩
Communication dans un congrès
cea-04528483
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Transfer of an AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bondingOptics and Photonics for Advanced Dimensional Metrology II, Apr 2022, Strasbourg, France. pp.20, ⟨10.1117/12.2621898⟩
Communication dans un congrès
cea-04793515
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Towards $5\mu \mathrm{m}$ interconnection pitch with Die-to-Wafer direct hybrid bonding2021 IEEE 71st Electronic Components and Technology Conference (ECTC), Jun 2021, San Diego, United States. pp.470-475, ⟨10.1109/ECTC32696.2021.00085⟩
Communication dans un congrès
cea-04951727
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Opportunities and challenges brought by 3D-sequential integration2021 IEEE International Interconnect Technology Conference (IITC), Jul 2021, Kyoto, France. pp.1-1, ⟨10.1109/IITC51362.2021.9537356⟩
Communication dans un congrès
hal-03434018
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Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer2020 European Conference on Optical Communications (ECOC), Dec 2020, Brussels, Belgium. pp.1-4, ⟨10.1109/ECOC48923.2020.9333230⟩
Communication dans un congrès
hal-04627280
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Die to Wafer Direct Hybid Bonding Demonstration with High Alignment Accuracy and Electrical Yields2019 International 3D Systems Integration Conference (3DIC), Oct 2019, Sendai, Japan. pp.1-7, ⟨10.1109/3DIC48104.2019.9058905⟩
Communication dans un congrès
cea-04777615
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A reliable copper-free wafer level hybrid bonding technology for high-performance medical imaging sensors2020 IEEE 70th Electronic Components and Technology Conference (ECTC), Jun 2020, Orlando, United States. pp.201-209, ⟨10.1109/ECTC32862.2020.00044⟩
Communication dans un congrès
cea-04924159
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High temperature sealing of silicon oxide/oxide bonding interfacesPRiME 2020, Oct 2020, Online, United States. pp.1627-1627, ⟨10.1149/MA2020-02221627mtgabs⟩
Communication dans un congrès
cea-03096019
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Die-to-Wafer 3D Interconnections Operating at Sub-Kelvin Temperatures for Quantum Computation2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC), Sep 2020, Tønsberg, Norway. pp.1-7, ⟨10.1109/ESTC48849.2020.9229657⟩
Communication dans un congrès
hal-03455251
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Towards a Complete Direct Hybrid Bonding D2W Integration Flow: Known-Good-Dies and Die Planarization Modules Development2019 International 3D Systems Integration Conference (3DIC), Oct 2019, Sendai, Japan. pp.1-5, ⟨10.1109/3DIC48104.2019.9058783⟩
Communication dans un congrès
cea-04776545
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Highly Strained Silicon on Polymer Obtained By Temporary Polymer Wafer BondingPRiME 2020, Oct 2020, Online, United States. pp.1618-1618, ⟨10.1149/MA2020-02221618mtgabs⟩
Communication dans un congrès
cea-03096035
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High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate2019 Compound Semiconductor Week (CSW), May 2019, Nara, Japan. pp.1-2, ⟨10.1109/ICIPRM.2019.8818994⟩
Communication dans un congrès
hal-02330625
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Breakthroughs in 3D Sequential technology2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.7.2.1-7.2.4, ⟨10.1109/IEDM.2018.8614653⟩
Communication dans un congrès
cea-04808833
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Robustness and reliability achievements for direct hybrid bonding integration: a review2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), May 2019, Kanazawa, Japan. pp.11-11, ⟨10.23919/LTB-3D.2019.8735353⟩
Communication dans un congrès
cea-04521620
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Die to wafer direct bonding: from fundamental mechanisms to optoelectronic and 3D applications2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), May 2019, Kanazawa, Japan. pp.16-16, ⟨10.23919/LTB-3D.2019.8735248⟩
Communication dans un congrès
cea-04790247
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Self-Assembly Process for 3D Die-to-Wafer using Direct Bonding: A Step Forward Toward Process Automatisation2019 IEEE 69th Electronic Components and Technology Conference (ECTC), May 2019, Las Vegas, United States. pp.225-234, ⟨10.1109/ECTC.2019.00041⟩
Communication dans un congrès
cea-04783270
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(Invited) Water Transport Along Si/Si Direct Wafer Bonding InterfacesAIMES 2018, Electrochemical Society ECS, Sep 2018, CANCUN, Mexico. pp.39-47, ⟨10.1149/08605.0039ecst⟩
Communication dans un congrès
hal-02005572
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A sensor to measure flow rate in individual nanoporeJournées de la matière condensée, Aug 2018, Grenoble, France
Communication dans un congrès
hal-02017568
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Wafer-Bonded AlGaAs///Si Dual-Junction Solar Cells2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), Jun 2017, Washington, United States. pp.2562-2565, ⟨10.1109/PVSC.2017.8366116⟩
Communication dans un congrès
hal-02042351
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1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, Canada. pp.1-2, ⟨10.1109/S3S.2017.8309213⟩
Communication dans un congrès
cea-02185349
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Strongly directional scattering from dielectric nanowiresMETA 2017, Symp. 14 "Fano resonances in optics and microwaves, Jul 2017, Incheon- Seoul, South Korea
Communication dans un congrès
hal-01768972
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Adhesion Energy and Bonding Wave Velocity MeasurementsPRIME 2016, Oct 2016, Honolulu, United States. pp.145-152, ⟨10.1149/07509.0145ecst⟩
Communication dans un congrès
hal-01974477
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Transfer of Ultra-Thin Semi-Conductor Films onto Flexible SubstratesPRiME 2016/230th ECS Meeting, Electrochemical Society, Oct 2016, Honolulu, United States. pp.247-252, ⟨10.1149/07509.0247ecst⟩
Communication dans un congrès
hal-02016097
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Linear and nonlinear light scattering properties of individual silicon nanowires.6th Int. Conf. on Nanostructures and Nanomaterials Self-Assembly (nanosea 2016), Jul 2016, Giardini Naxos, Italy
Communication dans un congrès
hal-01768994
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Linear and nonlinear optical properties properties of individual silicon nanowires.ECS Meeting, nanoscale luminescent materials, May 2016, San Diego, United States
Communication dans un congrès
hal-01769024
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Edge Water Penetration in Direct Bonding InterfacePRiME 2016/230th ECS Meeting, Electrochemical Society, Oct 2016, Honolulu, United States. pp.163-167, ⟨10.1149/07509.0163ecst⟩
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hal-02016077
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Impact of Water Edge Absorption on Silicon Oxide Direct Bonding EnergyPRIME 2016, Oct 2016, Honolulu, United States. pp.129-134, ⟨10.1149/07509.0129ecst⟩
Communication dans un congrès
hal-01974475
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3DVLSI with CoolCube process: An alternative path to scaling2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T48-T49, ⟨10.1109/VLSIT.2015.7223698⟩
Communication dans un congrès
hal-02049760
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Direct Bonding Mechanism of ALD-Al2O3 Thin Films13th International Symposium on Semiconductor Wafer Bonding - Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc, ECS, Oct 2014, Cancun, Mexico. pp.57-65, ⟨10.1149/06405.0057ecst⟩
Communication dans un congrès
hal-02015924
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(Invited) Water Stress Corrosion in Bonded Structures13th International Symposium on Semiconductor Wafer Bonding - Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc, Oct 2014, Cancun, Mexico. pp.121-132
Communication dans un congrès
hal-02015940
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In-Depth Study of Strained SGOI nMOSFETs down to 30nm Gate Length35st European Solid-State Device Research Conference, 2005, Grenoble, France
Communication dans un congrès
hal-00146508
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Elaboration de Nanocristaux Silicium, propriétés électriques et optiquesVIIIème Journées de la Matière Condensée, 2002, Marseille, France
Communication dans un congrès
hal-00486149
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Buffer-free GaN-on-X engineered substrates fabricated by using Smart Cut technologyICNS-14, Nov 2023, Fukuoka, Japan. 2023
Poster de conférence
cea-04667600
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Collage direct - Assemblage sans adhésif pour environnements extrêmesTechniques de l'ingénieur, pp.N 2000, 2024, ⟨10.51257/a-v1-n2000⟩
Chapitre d'ouvrage
hal-04801185
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Fano-Resonances in High Index Dielectric Nanowires for Directional ScatteringHerausgeber: Kamenetskii, Eugene, Sadreev, Almas, Miroshnichenko, Andrey (Eds.). Fano Resonances in Optics and Microwaves: Physics and Applications, Springer, pp.283-310, 2018, 978-3-319-99730-8
Chapitre d'ouvrage
hal-01850259
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PROCEDE ET DISPOSITIF DE CONTROLE D'UN COLLAGE ENTRE DEUX SUBSTRATSFrance, N° de brevet: FR3060121. 2018
Brevet
hal-02065696
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Procédé de nanostructuration de la surface d'un substratN° de brevet: FRA 0652981. 2007
Brevet
hal-00170052
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REALISATION PAR ADHESION MOLECULAIRE D'UN SUBSTRAT INDUISANT L'AUTO-ORGANISATION LATERALE ET CONTROLEE DU DEPOT DE NANOSTRUCTURESMatière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2001. Français. ⟨NNT : ⟩
Thèse
tel-00003882
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Applications de l'adhésion moléculaireGénie des procédés. Université Grenoble 1, 2009
HDR
tel-04086626
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