
François CAUWET
56
Documents
Publications
Publications
Effet de la polarité du substrat 4H-SiC sur la croissance hétéroépitaxiale du carbure de bore BxC par CVDConférence MATEPI 2023, Jean-Noël AQUA, Jul 2023, Paris, France
Communication dans un congrès
hal-04884322
v1
|
|
Structuration de surface du 4H-SiC en macro-marches parallèles à partir d'un sandwich SiC/Si(liq)/SiCConférence MATÉPI 2023, Jean-Noël AQUA, Jul 2023, Paris, France
Communication dans un congrès
hal-04884295
v1
|
|
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich ApproachInternational conference on silicon carbide and related materials, Andrea Irace; Giovanni Breglio, Sep 2023, Sorrento (Italie), Italy
Communication dans un congrès
hal-04887969
v1
|
|
Thermochromic properties of NiTiO3E-MRS 2022 Spring Meeting, European Materials Research Society, May 2022, Virtual conference, France
Communication dans un congrès
hal-04866158
v1
|
|
|
Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced ReconstructionInternational conference on silicon carbide and related materials, Ulrike Grossner, Sep 2022, Davos (Suisse), Switzerland. ⟨10.4028/p-5p6o3j⟩
Communication dans un congrès
hal-04593942
v1
|
Epitaxial Growth of Boron Carbide on 4H-SiCInternational conference on silicon carbide and related materials 2022, Sep 2022, DAVOS, Switzerland
Communication dans un congrès
hal-04877889
v1
|
|
3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various OrientationsEuropean conference on silicon carbide and related materials, ALQUIER Daniel, Oct 2021, Tours (France), France
Communication dans un congrès
hal-04887793
v1
|
|
Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.115-120
Communication dans un congrès
hal-02025347
v1
|
|
Ge assisted SiC epitaxial growth by CVD on SiC substrate15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩
Communication dans un congrès
hal-02025422
v1
|
|
Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors9th European Conference on Silicon Carbide and Related Materials, Sep 2012, Saint Petersburg, Russia. pp.323-326, ⟨10.4028/www.scientific.net/MSF.740-742.323⟩
Communication dans un congrès
hal-02864858
v1
|
|
|
Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès
hal-04362529
v1
|
p-type SiC growth on diamond substrate by VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès
hal-04423301
v1
|
|
Epitaxial growth of 3C-SiC onto silicon substrate by VLS transport using CVD-grown 3C-SiC seeding layerHeteroSiC–WASMPE, Jun 2011, Tours, France
Communication dans un congrès
hal-01116084
v1
|
|
Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate14th International Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States. pp.145-148, ⟨10.4028/www.scientific.net/MSF.717-720.145⟩
Communication dans un congrès
hal-02864847
v1
|
|
Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrateHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩
Communication dans un congrès
hal-00747669
v1
|
|
Investigation of 3C-SiC lateral growth on 4H-SiC MESAsCSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩
Communication dans un congrès
hal-00786369
v1
|
|
Investigation of the growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) transportECSCRM 2010, Aug 2010, Oslo, Norway. pp.99-102
Communication dans un congrès
hal-01116070
v1
|
|
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates13th International Conference on Silicon Carbide and Related Materials 2009, Oct 2009, Nürnberg, Germany. pp.171-174, ⟨10.4028/www.scientific.net/MSF.645-648.171⟩
Communication dans un congrès
hal-02864825
v1
|
|
Growing p-type 3C-SiC heteroepitaxial layers by Vapour-Liquid-Solid mechanism on 6H-SiC substrateE-MRS Symposium 2010, European Materials Research Society, Oct 2010, Strasbourg, France. pp.11-14, ⟨10.1063/1.3518276⟩
Communication dans un congrès
hal-02863903
v1
|
|
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nürnberg, Germany. pp.127-130, ⟨10.4028/www.scientific.net/MSF.645-648.127⟩
Communication dans un congrès
hal-02864840
v1
|
|
Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS12th International Conference on Silicon Carbide and Related Materials, Oct 2007, Otsu, Japan. pp.195-198, ⟨10.4028/www.scientific.net/MSF.600-603.195⟩
Communication dans un congrès
hal-02864815
v1
|
|
Polarity Effect on the Heteroepitaxial Growth of BxС On 4H-SiС by CVDInternational conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy
Poster de conférence
hal-04872652
v1
|
|
Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration19th International conference on silicon carbide and related materials (ICSCRM 2022), Sep 2022, Davos, Switzerland. , ⟨10.4028/p-3ilk20⟩
Poster de conférence
hal-04593959
v1
|
|
Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich ConfigurationEuropean Conference on silicon carbide and related materials, Oct 2021, Tours (FR), France. ⟨10.4028/p-8302i1⟩
Poster de conférence
hal-04595559
v1
|
|
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVDInternational conference on silicon carbide and related materials 2023, Solid State Phenomena, 362, pp.1-6, 2024, ⟨10.4028/p-uFrJ54⟩
Proceedings/Recueil des communications
hal-04726099
v1
|
|
Epitaxial Growth of Boron Carbide on 4H-SiCInternational conference on silicon carbide and related materials 2022, Solid State Phenomena, 343, pp.3-8, 2023, ⟨10.4028/p-6t47nz⟩
Proceedings/Recueil des communications
hal-04235394
v1
|
|
Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich ConfigurationMaterials Science Forum, 1062, pp.8 - 12, 2022, ⟨10.4028/p-8302i1⟩
N°spécial de revue/special issue
hal-03800141
v1
|
Synthesis of Silicon Carbide Nanowires from a mixture of CaCO3 and Si powders.Ceramics Nanomaterials and Nanotechnologies, 172, pp.149-157, 2006, Ceramic Transactions, 978-1-574-98242-8. ⟨10.1002/9781118408049.ch15⟩
Chapitre d'ouvrage
hal-01702716
v1
|
|
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach2024, pp.7-12. ⟨10.4028/p-auZ0OI⟩
Autre publication scientifique
hal-04726127
v1
|
|
Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction2023, pp.9-14. ⟨10.4028/p-5p6o3j⟩
Autre publication scientifique
hal-04235371
v1
|
|
3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations2022, pp.23 - 27. ⟨10.4028/p-aaf11g⟩
Autre publication scientifique
hal-03800131
v1
|
Chargement...
Chargement...