François CAUWET

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Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration

Yann Jousseaume , François Cauwet , Gabriel Ferro
Solid State Phenomena, 2023, 342, pp.73-78. ⟨10.4028/p-3ilk20⟩
Article dans une revue hal-04235310 v1
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From dissolution to controlled macrostepping of 4H-SiC during liquid Si-induced structuring in a sandwich configuration

Yann Jousseaume , François Cauwet , Bruno Gardiola , Gabriel Ferro
Journal of Crystal Growth, 2023, 617, pp.127294. ⟨10.1016/j.jcrysgro.2023.127294⟩
Article dans une revue hal-04186661 v1
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Thermochromic properties of pure NiTiO3 and its Cu- or Co-doped derivatives

Loren Acher , Hyewon Ji , Nicolas Garino , Florian Massuyeau , Laurie Pontille et al.
Ceramics International, 2023, 49 (8), pp.12267-12273. ⟨10.1016/j.ceramint.2022.12.079⟩
Article dans une revue hal-03921687 v1
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Macrosteps formation on 4H-SiC surfaces via Si melting within a sandwich configuration

Yann Jousseaume , François Cauwet , Gabriel Ferro
Journal of Crystal Growth, 2022, 593, pp.126783. ⟨10.1016/j.jcrysgro.2022.126783⟩
Article dans une revue hal-03712777 v1
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Thermochromic Properties of Some Colored Oxide Materials

Gabriel Ferro , Davy Carole , François Cauwet , Loren Acher , Hyewon Ji et al.
Optical Materials: X, 2022, 15, pp.100167. ⟨10.2139/ssrn.4065706⟩
Article dans une revue hal-03712844 v1
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Fabrication of BN membranes containing high density of cylindrical pores using an elegant approach

C. Marichy , V. Salles , X. Jaurand , A. Etiemble , Thierry Douillard et al.
RSC Advances, 2017, 7 (34), pp.20709 - 20715. ⟨10.1039/c7ra03808a⟩
Article dans une revue hal-01597112 v1

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Gabriel Ferro , Alexandre Jaud , Laurent Auvray , Abdelkarim Kahouli , Tony Abi-Tannous et al.
Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600428⟩
Article dans une revue hal-01615198 v1

Nanochannel arrays etched into hexagonal boron nitride meso-membranes by a focused ion beam

S. Linas , R. Fulcrand , F. Cauwet , B. Poinsot , A. Brioude
RSC Advances, 2015, 5 (61), pp.49231 - 49234. ⟨10.1039/c5ra05325k⟩
Article dans une revue hal-01597127 v1
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Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

K. Alassaad , M. Vivona , V. Soulière , B. Doisneau , F. Cauwet et al.
ECS Journal of Solid State Science and Technology, 2014, 3 (8), pp.P285 - P292. ⟨10.1149/2.0121408jss⟩
Article dans une revue hal-01615319 v1
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Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.

Kassem Alassaad , Véronique Soulière , François Cauwet , Hervé Peyre , Davy Carole et al.
Acta Materialia, 2014, 75, pp.219-226. ⟨10.1016/j.actamat.2014.04.057⟩
Article dans une revue hal-01023271 v1

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali et al.
Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩
Article dans une revue hal-00803058 v1

p-Doped SiC Growth on Diamond Substrate by VLS Transport

Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet et al.
Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩
Article dans une revue hal-01627777 v1

Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase

A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet et al.
Diamond and Related Materials, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩
Article dans une revue hal-02863887 v1

Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet et al.
Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩
Article dans une revue istex hal-01627830 v1

Deposition of nanocrystalline translucent h-BN films by chemical vapor deposition at high temperature

Ghassan Younes , Gabriel Ferro , Maher Soueidan , Arnaud Brioude , Véronique Soulière et al.
Thin Solid Films, 2012, 520 (7), pp.2424 - 2428. ⟨10.1016/j.tsf.2011.09.082⟩
Article dans une revue hal-01597171 v1

Investigation of 3C-SiC growth on Si(111) by vapor-liquid-solid transport using a SiGe liquid phase

S. Berckmans , Laurent Auvray , G. Ferro , F. Cauwet , V. Soulière et al.
Journal of Crystal Growth, 2012, 354, pp.119-128
Article dans une revue hal-01116034 v1

Growing 3C-SiC heteroepitaxial layers on α-SiC substrate by vapour–liquid–solid mechanism from the Al–Ge–Si ternary system

Jean Lorenzzi , Gabriel Ferro , François Cauwet , Véronique Soulière , Davy Carole
Journal of Crystal Growth, 2011, 318 (1), pp.397-400. ⟨10.1016/j.jcrysgro.2010.10.174⟩
Article dans une revue hal-02573259 v1

Effect of nitrogen impurity on the stabilization of 3C–SiC polytype during heteroepitaxial growth by vapor–liquid–solid mechanism on 6H–SiC substrates

Jean Lorenzzi , Véronique Soulière , Davy Carole , Nikoletta Jegenyes , Olivier Kim-Hak et al.
Diamond and Related Materials, 2011, 20 (5-6), pp.808-813. ⟨10.1016/j.diamond.2011.03.037⟩
Article dans une revue hal-02573245 v1

Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst

Davy Carole , Arnaud Brioude , Anne Pillonnet , Jean Lorenzzi , Olivier Kim-Hak et al.
Journal of Crystal Growth, 2011, 320 (1), pp.55 - 62. ⟨10.1016/j.jcrysgro.2011.01.104⟩
Article dans une revue istex hal-01597189 v1

3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt

J. Lorenzzi , Mihai Lazar , Dominique Tournier , N. Jegenyes , D. Carole et al.
Crystal Growth & Design, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩
Article dans une revue hal-00786365 v1

Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism

Jean Lorenzzi , Georgios Zoulis , Jianwu Sun , Maya Marinova , Olivier Kim-Hak et al.
Journal of Crystal Growth, 2010, 312 (23), pp.3443-3450. ⟨10.1016/j.jcrysgro.2010.08.058⟩
Article dans une revue istex hal-00547051 v1

Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates

Ghassan Younes , Gabriel Ferro , Maher Soueidan , Arnaud Brioude , François Cauwet
Materials Science Forum, 2010, 645-648, pp.1191 - 1194. ⟨10.4028/www.scientific.net/MSF.645-648.1191⟩
Article dans une revue hal-01597208 v1

SiC Homoepitaxial Growth at Low Temperature by Vapor-Liquid-Solid Mechanism in Al-Si Melt

Christophe Jacquier , Gabriel Ferro , François Cauwet , Didier Chaussende , Yves Monteil
Crystal Growth & Design, 2003, 3 (3), pp.285-287. ⟨10.1021/cg0256069⟩
Article dans une revue hal-00187892 v1

A comprehensive study of SiC growth processes in a VPE reactor

Thierry Chassagne , Gabriel Ferro , Didier Chaussende , François Cauwet , Yves Monteil et al.
Thin Solid Films, 2002, 402, pp.83-89
Article dans une revue hal-00187126 v1

Study of the interaction between graphite and Al-Si melts for the growth of crystalline silicon carbide

Christophe Jacquier , Didier Chaussende , Gabriel Ferro , Jean-Claude Viala , François Cauwet et al.
Journal of Materials Science, 2002, 37, pp.3299-3306
Article dans une revue hal-00187149 v1

Effet de la polarité du substrat 4H-SiC sur la croissance hétéroépitaxiale du carbure de bore BxC par CVD

Gabriel Ferro , Laurent Auvray , François Cauwet , Yamina Benamra
Conférence MATEPI 2023, Jean-Noël AQUA, Jul 2023, Paris, France
Communication dans un congrès hal-04884322 v1

Structuration de surface du 4H-SiC en macro-marches parallèles à partir d'un sandwich SiC/Si(liq)/SiC

Gabriel Ferro , Yann Jousseaume , François Cauwet
Conférence MATÉPI 2023, Jean-Noël AQUA, Jul 2023, Paris, France
Communication dans un congrès hal-04884295 v1

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach

Yann Jousseaume , Piyush Kumar , Marianne Etzelmüller Bathen , François Cauwet , Ulrike Grossner et al.
International conference on silicon carbide and related materials, Andrea Irace; Giovanni Breglio, Sep 2023, Sorrento (Italie), Italy
Communication dans un congrès hal-04887969 v1

Thermochromic properties of NiTiO3

Loren Acher , Hyewon Ji , Nicolas Garino , Florian Massuyeau , Stéphane Jobic et al.
E-MRS 2022 Spring Meeting, European Materials Research Society, May 2022, Virtual conference, France
Communication dans un congrès hal-04866158 v1

Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction

Yann Jousseaume , François Cauwet , Judith Woerle , Ulrike Grossner , Sofia Aslanidou et al.
International conference on silicon carbide and related materials, Ulrike Grossner, Sep 2022, Davos (Suisse), Switzerland. ⟨10.4028/p-5p6o3j⟩
Communication dans un congrès hal-04593942 v1

Epitaxial Growth of Boron Carbide on 4H-SiC

Yamina Benamra , Laurent Auvray , J. Andrieux , François Cauwet , Maria-Paz Alegre et al.
International conference on silicon carbide and related materials 2022, Sep 2022, DAVOS, Switzerland
Communication dans un congrès hal-04877889 v1

3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations

Gabriel Ferro , Taguhi Yeghoyan , François Cauwet , Stephane Coindeau , Thierry Encinas et al.
European conference on silicon carbide and related materials, ALQUIER Daniel, Oct 2021, Tours (France), France
Communication dans un congrès hal-04887793 v1

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation

Véronique Soulière , Kassem Alassaad , François Cauwet , Hervé Peyre , Thomas Kups et al.
10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.115-120
Communication dans un congrès hal-02025347 v1

Ge assisted SiC epitaxial growth by CVD on SiC substrate

Kassem Alassaad , Véronique Soulière , Beatrice Doisneau , François Cauwet , Hervé Peyre et al.
15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩
Communication dans un congrès hal-02025422 v1

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

Kassem Alassaad , François Cauwet , Davy Carole , Véronique Soulière , Gabriel Ferro
9th European Conference on Silicon Carbide and Related Materials, Sep 2012, Saint Petersburg, Russia. pp.323-326, ⟨10.4028/www.scientific.net/MSF.740-742.323⟩
Communication dans un congrès hal-02864858 v1
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali et al.
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04362529 v1

p-type SiC growth on diamond substrate by VLS Transport

Arthur Vo-Ha , Davy Carole , Mihai Lazar , D. Tournier , François Cauwet et al.
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès hal-04423301 v1

Epitaxial growth of 3C-SiC onto silicon substrate by VLS transport using CVD-grown 3C-SiC seeding layer

S. Berckmans , Laurent Auvray , Gabriel Ferro , F. Cauwet , V. Souliere et al.
HeteroSiC–WASMPE, Jun 2011, Tours, France
Communication dans un congrès hal-01116084 v1

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate

Nikoletta Jegenyes , Véronique Soulière , François Cauwet , Gabriel Ferro
14th International Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States. pp.145-148, ⟨10.4028/www.scientific.net/MSF.717-720.145⟩
Communication dans un congrès hal-02864847 v1

Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate

Jean Lorenzzi , Nicoletta Jegenyes , Mihai Lazar , Dominique Tournier , Davy Carole et al.
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩
Communication dans un congrès hal-00747669 v1

Investigation of 3C-SiC lateral growth on 4H-SiC MESAs

Jean Lorenzzi , Nikoletta Jegenyes , Mihai Lazar , Dominique Tournier , Francois Cauwet et al.
CSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩
Communication dans un congrès hal-00786369 v1

Investigation of the growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) transport

S. Berckmans , Laurent Auvray , G. Ferro , F. Cauwet , D. Carole et al.
ECSCRM 2010, Aug 2010, Oslo, Norway. pp.99-102
Communication dans un congrès hal-01116070 v1

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

Jean Lorenzzi , Georgios Zoulis , Olivier Kim-Hak , Nikoletta Jegenyes , Davy Carole et al.
13th International Conference on Silicon Carbide and Related Materials 2009, Oct 2009, Nürnberg, Germany. pp.171-174, ⟨10.4028/www.scientific.net/MSF.645-648.171⟩
Communication dans un congrès hal-02864825 v1

Growing p-type 3C-SiC heteroepitaxial layers by Vapour-Liquid-Solid mechanism on 6H-SiC substrate

J. Lorenzzi , Véronique Soulière , F. Cauwet , D. Carole , G. Ferro
E-MRS Symposium 2010, European Materials Research Society, Oct 2010, Strasbourg, France. pp.11-14, ⟨10.1063/1.3518276⟩
Communication dans un congrès hal-02863903 v1

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

Nikoletta Jegenyes , Jean Lorenzzi , Véronique Soulière , Jacques Dazord , François Cauwet et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nürnberg, Germany. pp.127-130, ⟨10.4028/www.scientific.net/MSF.645-648.127⟩
Communication dans un congrès hal-02864840 v1

Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS

Gabriel Ferro , Maher Soueidan , Olivier Kim-Hak , Jacques Dazord , François Cauwet et al.
12th International Conference on Silicon Carbide and Related Materials, Oct 2007, Otsu, Japan. pp.195-198, ⟨10.4028/www.scientific.net/MSF.600-603.195⟩
Communication dans un congrès hal-02864815 v1
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Polarity Effect on the Heteroepitaxial Growth of BxС On 4H-SiС by CVD

François Cauwet , Yamina Benamra , Laurent Auvray , J. Andrieux , Gabriel Ferro
International conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy
Poster de conférence hal-04872652 v1
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Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration

Yann Jousseaume , François Cauwet , Gabriel Ferro
19th International conference on silicon carbide and related materials (ICSCRM 2022), Sep 2022, Davos, Switzerland. , ⟨10.4028/p-3ilk20⟩
Poster de conférence hal-04593959 v1
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Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration

Yann Jousseaume , François Cauwet , Gabriel Ferro
European Conference on silicon carbide and related materials, Oct 2021, Tours (FR), France. ⟨10.4028/p-8302i1⟩
Poster de conférence hal-04595559 v1
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Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD

François Cauwet , Yamina Benamra , Laurent Auvray , J. Andrieux , Gabriel Ferro
International conference on silicon carbide and related materials 2023, Solid State Phenomena, 362, pp.1-6, 2024, ⟨10.4028/p-uFrJ54⟩
Proceedings/Recueil des communications hal-04726099 v1
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Epitaxial Growth of Boron Carbide on 4H-SiC

Yamina Benamra , Laurent Auvray , Jérôme Andrieux , François Cauwet , Maria-Paz Alegre et al.
International conference on silicon carbide and related materials 2022, Solid State Phenomena, 343, pp.3-8, 2023, ⟨10.4028/p-6t47nz⟩
Proceedings/Recueil des communications hal-04235394 v1

Synthesis of Silicon Carbide Nanowires from a mixture of CaCO3 and Si powders.

Mikhael Bechelany , David Cornu , F. Chassagneux , Samuel Bernard , F. Cauwet et al.
Ceramics Nanomaterials and Nanotechnologies, 172, pp.149-157, 2006, Ceramic Transactions, 978-1-574-98242-8. ⟨10.1002/9781118408049.ch15⟩
Chapitre d'ouvrage hal-01702716 v1