Geoffrey Avit
Publications
Publications
The HVPE technique for the growth of III-As and III-N micro and nanostructuresJournées croissance cristalline Renatech, Nov 2024, Toulouse, France |
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III-As and III-N nanowires grown by hydride vapor phase epitaxyJournées nationales du réseau CRISTECH, Oct 2024, Angers, France |
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Selective area growth of well-ordered (In,Ga)N nanowires grown by HVPEGdR MATEPI, Jul 2023, Paris, France |
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Croissance sélective de GaN par épitaxie en phase vapeur par la méthode aux hydrures (HVPE)Session plénière GDR PULSE, Oct 2017, Paris, France |
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Homogeneous and high-quality InGaN nanowires with different indium compositionsJournées nationales des nanofils, Nov 2017, Grenoble, France |
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Highlights of the HVPE for the frowth of GaN and InGaN nanowires15th Akasaki Research Center Symposium, Nov 2017, Nagoya, Japan |
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Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on siliconEnergy Materials Nanotechnology EMN Epitaxy, EMN Europe Meetings, Sep 2017, Barcelone, Spain |
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Vapor Phase Epitaxy growth of III-V nanostructures for high performance devices8th International Conference and Exhibition on LASERS, OPTICS & PHOTONICS, Nov 2017, Las Vegas, United States |
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III-nitride-based photovoltaic applications on silicon: Comparison between axial and coreshell InGaN nanowire devicesICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France |
Defect-free InGaN nanowires on silicon whatever the indium compositionRÉUNION PLÉNIÈRE DU GDR PULSE 2017, Oct 2017, Paris, France |
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Defect-free InGaN nanowires on silicon whatever the indium compositionICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France |
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Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE)Autre [cond-mat.other]. Université Blaise Pascal - Clermont-Ferrand II, 2014. Français. ⟨NNT : 2014CLF22530⟩ |