Geoffrey Avit

33
Documents

Publications

Publications

The HVPE technique for the growth of III-As and III-N micro and nanostructures

Geoffrey Avit

Journées croissance cristalline Renatech, Nov 2024, Toulouse, France

Communication dans un congrès hal-04903858v1

III-As and III-N nanowires grown by hydride vapor phase epitaxy

Geoffrey Avit

Journées nationales du réseau CRISTECH, Oct 2024, Angers, France

Communication dans un congrès hal-04903865v1

Selective area growth of well-ordered (In,Ga)N nanowires grown by HVPE

Geoffrey Avit

GdR MATEPI, Jul 2023, Paris, France

Communication dans un congrès hal-04903846v1

Croissance sélective de GaN par épitaxie en phase vapeur par la méthode aux hydrures (HVPE)

Geoffrey Avit , Mohammed Zeghouane , Yamina Andre , Elissa Roche , Evelyne Gil et al.

Session plénière GDR PULSE, Oct 2017, Paris, France

Communication dans un congrès hal-01659756v1

Homogeneous and high-quality InGaN nanowires with different indium compositions

Mohammed Zeghouane , Elissa Roche , Geoffrey Avit , Catherine Bougerol , Yamina Andre et al.

Journées nationales des nanofils, Nov 2017, Grenoble, France

Communication dans un congrès hal-01659721v1

Highlights of the HVPE for the frowth of GaN and InGaN nanowires

Agnes Trassoudaine , Yamina André , Geoffrey Avit , Evelyne Gil , Dominique Castelluci et al.

15th Akasaki Research Center Symposium, Nov 2017, Nagoya, Japan

Communication dans un congrès hal-01659801v1

Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon

Yamina Andre , Zhenning Dong , Elissa Roche , Geoffrey Avit , Vladimir G. Dubrovskii et al.

Energy Materials Nanotechnology EMN Epitaxy, EMN Europe Meetings, Sep 2017, Barcelone, Spain

Communication dans un congrès hal-01658883v1

Vapor Phase Epitaxy growth of III-V nanostructures for high performance devices

Geoffrey Avit , Yamina Andre , Elissa Roche , Zhenning Dong , Mohammed Zeghouane et al.

8th International Conference and Exhibition on LASERS, OPTICS & PHOTONICS, Nov 2017, Las Vegas, United States

Communication dans un congrès hal-01659747v1

III-nitride-based photovoltaic applications on silicon: Comparison between axial and coreshell InGaN nanowire devices

Kaddour Lekhal , Geoffrey Avit , Si-Young Baa , Ho-Jun Lee , Oussman Barry et al.

ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France

Communication dans un congrès hal-01659491v1

Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE

Elias Semlali , Geoffrey Avit , Yamina André , Evelyne Gil , Andriy Moskalenko et al.

Nanotechnology, 2024, 35 (26), pp.265604. ⟨10.1088/1361-6528/ad3741⟩

Article dans une revue hal-04713913v1

Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms

Emmanuel Chereau , Vladimir Dubrovskii , Ethan Diak , Elias Semlali , Geoffrey Avit et al.

ACS Applied Nano Materials, 2024, 7 (15), pp.17417-17423. ⟨10.1021/acsanm.4c02466⟩

Article dans une revue hal-04713908v1
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Long indium-rich InGaAs nanowires by SAG-HVPE

Emmanuel Chereau , Gabin Grégoire , Geoffrey Avit , Thierry Taliercio , Philipp Staudinger et al.

Nanotechnology, 2024, 35 (19), pp.195601. ⟨10.1088/1361-6528/ad263a⟩

Article dans une revue hal-04465785v1

Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy

Lanpeng Qiang , Emmanuel Chereau , Philippe Regreny , Geoffrey Avit , Agnès Trassoudaine et al.

Journal of Applied Physics, 2024, 136 (3), ⟨10.1063/5.0215140⟩

Article dans une revue hal-04713903v1

Control of SAG-GaN at the Nanoscale

Elias Semlali , Evelyne Gil , Geoffrey Avit , Yamina André , Arthur Sauvagnat et al.

Crystal Growth & Design, 2024, 24 (21), pp.8907-8913. ⟨10.1021/acs.cgd.4c00925⟩

Article dans une revue hal-04859091v1

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

Emmanuel Chereau , Vladimir Dubrovskii , Gabin Grégoire , Geoffrey Avit , Philipp Staudinger et al.

Crystal Growth & Design, 2023, 23 (6), pp.4401-4409. ⟨10.1021/acs.cgd.3c00172⟩

Article dans une revue hal-04326757v1

Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

Mohammed Zeghouane , Gabin Grégoire , Emmanuel Chereau , Geoffrey Avit , Philipp Staudinger et al.

Crystal Growth & Design, 2023, 23 (4), pp.2120-2127. ⟨10.1021/acs.cgd.2c01105⟩

Article dans une revue hal-04326767v1
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Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

Yoann Robin , Quentin Bournet , Geoffrey Avit , Markus Pristovsek , Yamina André et al.

Semiconductor Science and Technology, 2020, 35 (11), pp.115005. ⟨10.1088/1361-6641/abad73⟩

Article dans une revue hal-03009678v1
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Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Mohammed Zeghouane , Geoffrey Avit , Yamina Andre , Thierry Taliercio , Pierre Ferret et al.

Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩

Article dans une revue hal-02532717v1
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Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates

Mohammed Zeghouane , Yamina Andre , Geoffrey Avit , Jihen Jridi , Catherine Bougerol et al.

Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩

Article dans une revue hal-02992214v1

Compositional control of homogeneous InGaN nanowires with the In content up to 90%

Mohammed Zeghouane , Geoffrey Avit , Yamina Andre , Catherine Bougerol , Yoann Robin et al.

Nanotechnology, 2019, 30 (4), pp.044001. ⟨10.1088/1361-6528/aaec39⟩

Article dans une revue hal-02025949v1

Selective growth of ordered hexagonal InN nanorods

Mohammed Zeghouane , Geoffrey Avit , Thomas W. Cornelius , Damien Salomon , Yamina Andre et al.

CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩

Article dans une revue hal-02107331v1

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

Elissa Roche , Yamina Andre , Geoffrey Avit , Catherine Bougerol , Dominique Castelluci et al.

Nanotechnology, 2018, 29 (46), pp.465602. ⟨10.1088/1361-6528/aaddc1⟩

Article dans une revue hal-01913823v1

Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

Geoffrey Avit , Mohammed Zeghouane , Yamina André , Dominique Castelluci , Evelyne Gil et al.

CrystEngComm, 2018, 20 (40), pp.6207-6213. ⟨10.1039/c8ce01177j⟩

Article dans une revue hal-03217102v1

Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates

Hadi Hijazi , Vladimir Dubrovskii , Guillaume Monier , Evelyne Gil , Christine Leroux et al.

Journal of Physical Chemistry C, 2018, 122 (33), pp.19230 - 19235. ⟨10.1021/acs.jpcc.8b05459⟩

Article dans une revue hal-01886260v1

GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures

Geoffrey Avit , Yamina Andre , Catherine Bougerol , Dominique Castelluci , Amélie Dussaigne et al.

Crystal Growth & Design, 2016, 16 (5), pp.2509-2513. ⟨10.1021/acs.cgd.5b01244⟩

Article dans une revue hal-02007652v1

Spontaneously formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

Agnès Trassoudaine , Geoffrey Avit , Yamina André , Mohammed Réda Ramdani , Elissa Roche et al.

Journal of Crystal Growth, 2016, 454, pp.1-5. ⟨10.1016/j.jcrysgro.2016.08.031⟩

Article dans une revue istex hal-01385444v1

Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius

Christine Leroux , Evelyne Gil , Vladimir Dubrovskii , Geoffrey Avit , Yamina Andre et al.

Nano Letters, 2014, 14 (7), pp.3938 - 3944. ⟨10.1021/nl501239h⟩

Article dans une revue hal-01727364v1
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Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

Yamina Andre , Kaddour Lekhal , Philip E. Hoggan , Geoffrey Avit , Fabian Cadiz et al.

The Journal of Chemical Physics, 2014, 140 (19), ⟨10.1063/1.4874875⟩

Article dans une revue hal-01727422v1

Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process

G. Avit , Kaddour Lekhal , Y. André , Catherine Bougerol , François Reveret et al.

Nano Letters, 2014, 14 (2), pp.559. ⟨10.1021/nl403687h⟩

Article dans une revue hal-00945828v1

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

Kaddour Lekhal , G. Avit , Y. André , Agnès Trassoudaine , E. Gil et al.

Nanotechnology, 2012, 23 (40), pp.405601. ⟨10.1088/0957-4484/23/40/40560⟩

Article dans une revue hal-00855826v1

Defect-free InGaN nanowires on silicon whatever the indium composition

Mohammed Zeghouane , Elissa Roche , Geoffrey Avit , Yamina Andre , Catherine Bougerol et al.

RÉUNION PLÉNIÈRE DU GDR PULSE 2017, Oct 2017, Paris, France

Poster de conférence hal-01659715v1

Defect-free InGaN nanowires on silicon whatever the indium composition

Geoffrey Avit , Elissa Roche , Mohammed Zeghouane , Yamina Andre , Catherine Bougerol et al.

ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France

Poster de conférence hal-01659728v1