Guillaume Cassabois
Publications
Publications
Efficient light-matter interaction in hexagonal boron nitrideEMRS 2024 Fall Meeting (E-MRS), Sep 2024, Varsovie, Poland |
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Mechanochemical synthesis of alkali metal-containing B- and N-based precursors towards various boron nitride polytypes (invited conference)E-MRS Fall Meeting, Sep 2024, Varsovie, Poland |
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Polytypism in hexagonal boron nitride: an optical studyEMRS 2024 Fall Meeting (E-MRS), Sep 2024, Varsovie, Poland |
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Optical and spin properties of boron-vacancy centers in few-layer thick hBN2nd International Boron Nitride Workshop (BNW2024), May 2024, Sydney, Australia |
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Optoelectronic properties of boron nitride polytypesSPIE Photonics West, Jan 2023, San Francisco, United States |
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Telecom-band single photon sources monolithically grown on siliconTrends in NanoTechnology 2023, Aug 2023, Lyon, France |
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Polytypism in hexagonal boron nitride: an optical study14th International Conference on Nitride Semiconductors (ICNS14), Nov 2023, Fukuoka, Japan |
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Mechanical synthesis of boron nitride precursors leading to highly crystalline h-BN upon further pyrolysisMaterial Science Engineering (MSE), Sep 2022, Damstadt, Germany |
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Efficient light-matter interaction in hexagonal boron nitrideSPIE Photonics West 2022, Jan 2022, San Francisco, United States |
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Probing Ultrafast Dynamics of Anharmonically Coupled Phonons in Few-Layer Hexagonal Boron NitrideCLEO: QELS_Fundamental Science, 2022, San Jose, United States. pp.FM1A.7, ⟨10.1364/CLEO_QELS.2022.FM1A.7⟩ |
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Efficient light-matter interaction in hexagonal boron nitrideInternational Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany |
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Highly crystalline boron nitride powders by pyrolysis and mechanochemical synthesis of ammonia borane and alkali-containing precursors" (Invited conference)17th Conference of the European Ceramic Society - ECerS XVII, Jul 2022, Cracovie, Poland |
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Efficient light-matter interaction in hexagonal boron nitrideInternational Conference on the Science and Application of Nanotubes and Low-Dimensional Materials (NT22), Jun 2022, Suwon, South Korea |
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Efficient light-matter interaction in hexagonal boron nitride5th International Workshop on UV Materials and Devices (IWUMD2022), May 2022, Jeju, South Korea |
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Boron Nitride: Growth and Optical Properties of its Polytypes, or What Makes Sp2 Hybridization So Special5th International Workshop on UV Materials and Devices (IWUMD2022), May 2022, Jeju, South Korea |
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Efficient light-matter interaction in hexagonal boron nitrideCompound Semiconductor Week 2022 (CSW2022), Jun 2022, Ann Arbor, United States |
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Deep UV spectroscopy in hexagonal boron nitride: From bulk to monolayerSPIE Optics & Photonics 2021, Aug 2021, San Diego, United States |
Hexagonal boron nitride17èmes journées de la Matière Condensée (JMC17), Aug 2021, Rennes, France |
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Deep UV spectroscopy in hexagonal boron nitride: From bulk to monolayerInternational Conference on the Science and Application of Nanotubes and Low-Dimensional Materials (NT21), Jun 2021, Houston (TX), United States |
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Deep UV spectroscopy in hexagonal boron nitride: From bulk to monolayerVirtual-Graphene 2021, Nov 2021, Manchester, United Kingdom |
Optical properties of hexagonal boron nitrideSingularity workshop, Feb 2021, Nagoya, Japan |
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Reflectivity in bulk and monolayer crystals of hexagonal boron nitrideSPIE Photonics West 2021, Mar 2021, San Francisco, United States |
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Optical properties of hexagonal boron nitrideInternational Workshop Spintronics and Valleytronics of Two-dimensional Materials, May 2019, Daejeon, South Korea |
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Optoelectronic properties of hexagonal boron nitride4th International Workshop on UV Materials and Devices (IWUMD2019), Sep 2019, Saint-Pétersbourg, Russia |
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Deep UV Emission in Hexagonal Boron Nitride: from Bulk to Monolayer4th International Workshop on UV Materials and Devices (IWUMD2019), Sep 2019, Saint-Petersburg, Russia |
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Hexagonal boron nitride: novel optical properties in an old insulating materialJoint annual meeting, International Research Projects, CNRS "2DM" and "TeraMIR", Nov 2019, Montpellier, France |
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Optimizing the shape of InAs/InP quantum dot-nanowires grown by MBE on silicon for efficient light sources emitting in the telecom band20th European Workshop on Molecular Beam Epitaxy, Feb 2019, Lenggries, Germany |
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Single photon emission with a Gaussian far-field at telecom wavelength from single InAs/InP quantum dot-nanowires monolithically grown on SiNanowire Week 2019, Sep 2019, Pise, Italy |
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Hexagonal boron nitride: Physics and Applications in the Deep Ultraviolet13th International Conference on Nitride Semiconductors (ICNS13), Jul 2019, Seattle, United States |
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Deep UV emission in hexagonal boron nitride: from bulk to few-layer samplesIWUMD2018, Dec 2018, Kunming, China |
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InAs/InP quantum dot-nanowire single photon sources in the telecom band grown monolithically on silicon substratesC'Nano, Dec 2018, Toulon, France |
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Efficient exciton-phonon interaction : Why is it the case in hBN ?ICP2C3, Jun 2018, La Vallette, Malta |
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Hexagonal boron nitride: an indirect bandgap semiconductor with unique opto-electronic properties25th International Symposium "Nanostructures: Physics and Technology" (NANO2017), Jun 2017, Saint-Petersbourg, Russia |
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Hexagonal boron nitride: an indirect bandgap semiconductor with unique opto-electronic properties7th German-French-Korean workshop on Nanophotonics, Oct 2017, Sète, France |
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Optical properties of isotopically-purified hexagonal boron nitride2nd International Workshop on UV Materials and Devices (IWUMD2017), Nov 2017, Fukuoka, Japan |
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Phonon-assisted optical response in hexagonal boron nitrideSPIE Photonics West, Jan 2017, San Francisco, United States |
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Indirect excitons and electron-phonon interaction in hexagonal boron nitrideInternational Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States |
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Unraveling the bandgap nature in hexagonal boron nitrideIW2DC, May 2016, Campofelice di Roccella, Italy |
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Probing phonon-assisted optical transitions in hexagonal boron nitrideIWUMD2016, Jul 2016, Beijing, China |
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Enhancing carbon-nanotubes luminescence with the help of resonant hotspotsAdvances in Photonics and Applications, Jun 2016, Florence, Italy |
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Indirect excitons and electron-phonon interaction in hexagonal boron nitrideICPS2016, Aug 2016, Beijing, China |
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One- and two-photon spectroscopy in hexagonal boron nitridePLMCN17, Mar 2016, Nara, Japan |
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Optical properties of G centersAdvances in Photonics and Applications, Jun 2016, Florence, Italy |
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Unraveling the bandgap nature in hexagonal boron nitrideUK Nitrides Consortium winter conference, Jan 2016, Cambridge, United Kingdom |
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Optical properties of hexagonal boron nitrideSPIE Photonics West, Feb 2016, San Francisco, United States |
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Optical properties of hexagonal boron nitride11th International Conference on Nitride Semiconductors (ICNS11), Aug 2015, Beijing, China |
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A nitride-on-Silicon microdisk laser emitting at 275 nm and room-temperatureConference on Lasers and Electro-Optics 2015 (CLEO), Jun 2015, Munich, Germany |
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Nanophotonique et semiconducteurs nitrures : optique non-linéaire et nouveaux microlasers23ème Congrès de la Société Française de Physique (SFP2015), Aug 2015, Strasbourg, France |
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Enhancing carbon-nanotubes luminescence with the help of plasmonic antennas5th Korean-German-French workshop on nanophotonics, Dec 2015, Wurtzburg, Germany |
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Nitride-on-Silicon microdisks resonators for deep-UV laser emission at room-temperatureSPIE Photonics West 2015, colloque 9357 « Physics and Simulation of Optoelectronic Devices XXIII », Feb 2015, San Francisco, United States |
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Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templatesGALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, San Francisco, United States. pp.93630Z, ⟨10.1117/12.2076284⟩ |
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Optical properties of hexagonal boron nitrideDiscussions Lavoisier: Nouveaux matériaux bidimensionnels, Sep 2015, Toulouse, France |
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Metamaterials with quantum emittersQuantum Metamaterials 2015 Workshop, Jun 2015, Spetses, Greece |
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Radiative lifetime of excitons in high energy GaN/AlN quantum dotsCondensed Matter Day, Semiconductors I: Coherence properties in semiconductor quantum dots, Aug 2014, Paris, France |
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Time-resolved photoluminescence of GaN/AlN quantum dots emitting at 300 nmSPIE Photonics West, Feb 2014, San Francisco, United States |
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Biexcitons in semiconducting carbon nanotubesWONTON'13, Jun 2013, Santa Fe, United States |
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Biexciton in semiconducting carbon nanotubes7th Russian-French Workshop on Nanosciences and Nanotechnologies, Jun 2013, Novosibirsk, Russia |
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Chaos and Diffusion in periodic structuresInternational Workshop on the Physics of Excitons, Mar 2013, Varadero, Cuba |
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Etude de la photo-neutralisation et de la capture lente des porteurs dans les boîtes quantiques par spectroscopie d'excitation résonnanteJournées Boîtes Quantiques 2013 (JBQ 2013), Jun 2013, France |
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Biexciton in semiconducting carbon nanotubes3rd French-German-Korean Nanophotonic Workshop, Oct 2013, Grenoble, France |
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Resonant excitation of single quantum dots: towards an ultra-coherent single photons sourceThe 7th International Conference on Photonics and Applications (ICPA 7), 26-29/11/2012, Ho Chi Minh City (Vietnam), Nov 2012, Ho Chi Minh Ville, Vietnam |
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Biexciton in carbon nanotubesJMC13, Aug 2012, Montpellier, France |
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Ultra-coherent resonant emission of single quantum dots7th International Conference on Quantum Dots (QD 2012), May 2012, Santa Fe, United States |
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Resonant emission of single quantum dots: towards an ultra-coherent single photon source31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zürich, Switzerland |
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Exciton‐exciton interactions in single-wall carbon nanotubesWorkshop on Molecular and other low-‐dimensional systems, Jun 2012, Toulouse, France |
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Towards an ultra-coherent single photon source based on single quantum dots13th International Conference on Physics of Light-Matter Coupling in Nanostructure (PLMCN12), Jun 2012, Hangzhou, China |
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Nonlinear spectral hole-burning of the intraband transition at 1.55 μm in GaN/AlN quantum dotsInternational Workshop on Nitride semiconductors (IWN2012), Oct 2012, Sapporo, Japan |
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Optical gating of resonant fluorescence in single quantum dots.Optics of excitons in confined systems 12 (OECS12), Sep 2011, Paris, France |
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Optical gating of resonant Rayleigh scattering in single quantum dots11th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN11), Apr 2011, Berlin, Germany |
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Exciton collision broadening in single-wall carbon nanotubes.4th Workshop on Nanotube Optics and Nanospectroscopy (WONTON'11), May 2011, Bordeaux, France |
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Elastic exciton-exciton scattering in carbon nanotubesPLMCN11, Apr 2011, Berlin, Germany |
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Optical gating of resonant Rayleigh scattering in single quantum dotsQuantum Dot France 2011, Jun 2011, Toulouse, France |
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Exciton collision broadening in single-wall carbon nanotubesGDR-I Graphene and Nanotubes 2011, Feb 2011, Dourdan, France |
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Excitons in higher sub-bands of carbon nanotubes11th International Conference on Physics of Light-Matter Coupling in Nanostructures, Apr 2011, Berlin, Germany |
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Resonant fluorescence of the neutral and charged excitons in a single quantum dotQuantum Dot 2010, Apr 2010, Nottingham, United Kingdom |
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Photoluminescence properties of carbon nanotubesA nanoworld of tubes, Apr 2010, Chatillon, France |
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Spectral hole-burning in carbon nanotubes: collision broadening and bundle size effect11th International Conference on the Science and Applications of Nanotubes (NT10), Jun 2010, Montréal, Canada |
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Zero-phonon line shape in single InAs/GaAs quantum dots10th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN10), Apr 2010, Cuernavaca, Mexico |
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Resonant fluorescence in a single quantum dot: coherent versus incoherent effects.30th International Conference on the Physics of Semiconductors (ICPS 2010), Jul 2010, Seoul, South Korea |
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Homogeneous linewidth of the intraband transition at 1.55µm in GaN/AlN quantum dots.30th International Conference on the Physics of Semiconductors (ICPS 2010), Jul 2010, Seoul, South Korea |
Spectroscopy of an InAs/GaAs single quantum dot in a crystal photonic cavityThe 34th National Conference on Theoretical Physics, Aug 2009, Dong Hoi, Vietnam |
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Decoherence effects in the intraband and interband optical transitions in InAs/GaAs quantum dots29th International Conference on Physics of Semiconductors, Jul 2008, Rio de Janeiro (BRAZIL), Brazil. pp.122412, ⟨10.1063/1.3130926⟩ |
Electrical control of decoherence in single semiconductor quantum dots5th International Conference on Quantum Dots (QD2008), 2008, Gyeongju, South Korea |
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Voltage-controlled decoherence in single semiconductor quantum dots29 th International Conference on the Physics of Semiconductors (ICPS29), 2008, Rio de Janeiro, Brazil |
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Etude et contrôle de la décohérence dans les boîtes quantiques de semiconducteurs.11èmes Journées de la Matière Condensée (JMC11), 2008, Strasbourg, France |
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Optical properties of nanotubes of defined chirality at cryogenic temperaturesNinth International Conference on the Science and Application of Nanotubes (NT08), 2008, Montpellier, France |
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Temperature Dependance of the Photoluminescence of Single Wall Carbon Nanotubes in a Gelatin MatrixE-MRS 2007 Spring Meeting, 2007, Strasbourg, France |
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Thermal activation of spectral diffusion and broadening of the zero-phonon line in single quantum dotsInternational Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17-MSS 13), 2007, Gênes, Italy |
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Rétrécissement par le mouvement non-standard et déphasage par diffusion spectrale dans une boîte quantique de semiconducteurs10ème Colloque sur les Lasers et l'Optique Quantique (COLOQ'10), 2007, Grenoble, France |
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Unconventional motional narrowing in a semiconductor quantum dotXXXVI International School on the Physics of Semiconductor Compounds, Juin 2007, 2007, Jaszowiec, Poland |
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Exciton dynamics probed by time-resolved photoluminescence in semi conducting SWCNTWorkshop on nanotube optics and nanospectroscopy (wonton 07), 2007, Ottawa, Canada |
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Motionnal narrowing in a semiconductor quantum dot28th International Conference on the Physics of Semiconductors (ICPS28), 2006, Vienne, Austria |
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Time-resolved photoluminescence of carbon nanotubesAPS March meeting, 2006, Baltimore, United States |
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Temperature dependence of the light emission of single wall carbon nanotubesGDR-E "Science and Application of Nanotubes" 2006 Annual Meeting, 2006, Obernai, France |
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Motionnal narrowing in a single semiconductor quantum dot4th International Conference on Optics on Semiconductor quantum dots (QD2006), 2006, Chamonix, France |
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Phénomène de rétrécissement par le mouvement dans les boites quantiques InAs/GaAs10ème Journées de la Matière Condensée (JMC10), 2006, Toulouse, France |
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Exciton recombination dynamics in single wall carbon nanotubes26th International Conference on the Physics of Semiconductors (ICPS26), 2006, Vienne, Austria |
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Breakdown of the frozen exciton spin picture in quantum dotsMSS12, 2005, Albuquerque, United States |
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Efficient longitudinal relaxation of the exciton spin in single in quantum dotsOECS9, 2005, Southampton, United Kingdom |
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Environmental effects on carrier dynamics in singlewalled carbon nanotubes6th international conference on the science and application of nanotubes (NT'05), 2005, Goteborg, Sweden |
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Optical reponse of semiconductor quantum dotsWinter college on optics and photonics in nanoscience and technology, The Abdus Salam International Center for Theoretical Physics, 2005, Trieste, Italy |
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Extrinsic effects on carrier dynamics in single-walled carbon nanotubes1st workshop on nanotube optics and nanospectroscopy (WONTON 2005), 2005, Telluride, Colorado, United States |
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Beyond the two-level atom model : acoustic phonon side-bands in single InAs quantum dots3rd International Conference on Quantum Dots (QD2004), 2004, Banff, Canada |
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Environment effect on the optical properties of carbon nanotubesInternational Conference on the Science and Application of Nanotubes (NT04), 2004, San Luis Potosi, Mexico |
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Giant optical anisotropy in a single InAs/GaAs quantum dotSummerschool on Semiconductor Quantum Dots : Physics and Devices, 2004, Ascona, Switzerland |
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Linear and nonlinear optical properties of single wall carbon nanotubesCLEO/IQEC, 2004, San Francisco, United States |
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Beyond the artificial atom model : acoustic phonon broadening in single semiconductor quantum dots12th International Symposium on Nanostructures : Physics and Technology (NANO2004), 2004, St-Petersbourg, Russia |
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Giant optical anisotropy in single InAs quantum dots3rd International Conference on Quantum Dots (QD2004), 2004, Banff, Canada |
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Femtosecond investigation in single wall carbon nanotubesPhotonic West, 2004, San Jose, United States |
Nanowire-based telecom band single photon sources monolithically grown on siliconJournées de la Matière Condensée 2022, Aug 2022, Lyon, France |
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A nanowire-based telecom band single photon source monolithically grown on siliconJournées Nationales Nanofils semiconducteurs, Nov 2019, Ecully, France |
Single crystal growth of monoisotopic hexagonal boron nitride from a Fe-Cr fluxchemistry of materials, 8 (29), pp.9931-9935, 2020, ⟨10.1039/d0tc02143a⟩ |
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Spectral diffusion dephasing and motional narrowing in single semiconductor quantum dots.Springer. Optical Generation and Control of Quantum Coherence in Semiconductor Nanostructures, Springer, pp.25-38, 2010, NanoScience and Technology |
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From random telegraph to gaussian stochastic noises : decoherence and spectral diffusion in a semiconductor quantum dotQuantum Information and Entanglement, Hindawi Publishing Corporation, pp.494738, 2010, ⟨10.1155/2010/494738⟩ |
Spectral diffusion dephasing and motional narrowing in single semiconductor quantum dotsG. Slavcheva and Ph. Roussignol. Optical Generation and Control of Quantum Coherence in Semiconductor Nanostructures, Springer, pp.25, 2010, Nanoscience and Technology, ⟨10.1007/978-3-642-12491-4⟩ |
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Optoelectronic properties of hexagonal boron nitrideÉcole thématique. Russia. 2019 |
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Origines et limites du modèle de l'atome artificiel pour une boîte quantique de semiconducteursPhysique [physics]. Université Pierre et Marie Curie - Paris VI, 2006 |
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Fast exciton spin relaxation in single quantum dots2005 |
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Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble2004 |