Hervé Folliot
- Institut National des Sciences Appliquées - Rennes (INSA Rennes)
- Institut des Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
Présentation
Domaines de recherche
Publications
Publications
Through investigation of mode-coupling in VECSELs: towards robust dual-frequency operation of a single-axis laserSPIE Photonics West - LASE 2020, Feb 2020, San Francisco, United States |
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Spectral Hole Burning Spectroscopy on Quantum Dashes and Quantum Dots for Dual-Frequency Laser EngineeringCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France. pp.1-2 |
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Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSELCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, Japan. pp.1-2 |
1545 nm Quantum Dot Vertical Cavity Surface Emitting Laser with low thresholdCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France |
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1.5 µm Quantum Dots Spectral Hole Burning experiments for dual frequency laser engineering34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France |
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Réalisation et optimisation de composants photoniques à base de nanotubes de carboneColloque Francophone du Carbone, Société Francophone de l'Etude des Carbones, Apr 2017, Oléron, France |
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Optical properties of integrated waveguides incorporating semiconducting single-wall carbon nanotubesEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France |
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Enhancement of VCSEL performances using a novel bonding process based on localized electroplating copper through Silicon vias9th European Workshop on VCSELs (VCSEL Day 2016), TU Darmstadt, Jun 2016, Darmstadt, Germany |
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Finely tunable 1.55 µm emitting VeCSELs for embedded and compact optical and microwave systems3rd European Workshop on VeCSELs (VeCSEL 2015), IES - Institut d’Electronique et des Systèmes (Université de Montpellier), Nov 2015, Montpellier, France. pp.23 |
Luminescence guidée dans des guides d’onde intégrés incorporant des nanotubes de carboneOptique Bretagne 2015 - 35è Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France |
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Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substratesEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France |
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Accurate measurement of temperature and electrochemical potential of InGaAsPlInP heterostructures: a first indication of hot carriers solar cell operation2014 IEEE 40th Photovoltaic Specialists Conference (PVSC 2014), Jun 2014, Denver, United States |
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Transition metal clusters containing luminescent hybrid liquid crystal in the design of electroswitchable devices25th International Liquid Crystal Conference (ILCC 2014), Jun 2014, Dublin, Ireland |
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Characterization of InP/InGaAsP-multi-quantum-wells heterostructures for high efficiency solar energy conversionCompound Semiconductor Week 2014 - 41st International Symposium on Compound Semiconductors (ISCS 2014), May 2014, Montpellier, France |
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩ |
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Composition profiles in InP/InAsP quantum well structures under the effect of reactives gases during dry etching processes — Luminescence and SIMS26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.P7, ⟨10.1109/ICIPRM.2014.6880554⟩ |
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Sb surface mediated growth of InAs on InP(100) and (311)B substratesEuro-mbe conference, Mar 2013, Levi, Finland |
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Carrier lifetime and relaxation dynamics in (In)GaAs/GaP quantum dotsInternational Symposium on Physics and Applications of Laser Dynamics IS-PALD, Oct 2013, Paris, France |
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France |
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Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiquesJournées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France |
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Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium compositioneuro-MBE conference, Mar 2013, Levi, Finland |
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan |
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InP/InGaAsP Heterostructures for Hot Carrier Solar Cells (HCSC)28th European Photovoltaic Solar Energy Conference (EU PVSEC 2013), Sep 2013, Paris, France. pp.127-128, ⟨10.4229/28thEUPVSEC2013-1DO.4.3⟩ |
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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩ |
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany |
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩ |
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Hot Carrier Solar Cell: From Simulation to Devices27th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2012), Sep 2012, Frankfurt, Germany. pp.89, ⟨10.4229/27thEUPVSEC2012-1BO.9.4⟩ |
Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayersInternational Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany |
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Thermoelectric properties of InAs/InP nanostructuresMicrotechnology and Thermal Problems in Electronics (Microthem 2011), Jun 2011, Lodz, Poland |
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Thermoelectric properties of InAs/InP nanostructuresEuromat 2011, Sep 2011, Montpellier, France |
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1 |
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Lasers devices based on nanostructures grown on InP substrate for 1.55 μm emissionWorkshop Frontier 2010, Dec 2010, Albi, France |
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Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaPINNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1 |
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Caractérisation dynamique de la stabilité de polarisation des VCSELs a fils quantiques pour la réalisation de sources telecom accordablesSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.15-17 |
Polarization controlled quantum dashes VCSELs15th European Conference on Integrated Optics (ECIO 2010), Apr 2010, Cambridge, United Kingdom |
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Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy30th International Conference on the Physics of Semiconductors (ICPS 2010), Jul 2010, Seoul, South Korea. pp.102413, ⟨10.1063/1.3577960⟩ |
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Lasers à boites quantiques sur InP pour les applications télécom à 1,55 µmSéminaire PONANT 2010, Jul 2010, Rennes, France |
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11 |
Caractérisation dynamique de la stabilité de polarisation des VCSELs à fils quantiques pour les applications télécomJNOG 2010 : 29e journées nationales d'optique guidée, Oct 2010, Besançon, France |
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QD laser on InP substrate for 1.55 µm emission and beyondSPIE Photonics West - OPTO 2010, Jan 2010, San Francisco, United States. pp.76081B, ⟨10.1117/12.848398⟩ |
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Transition fils boites dans le système InAs/InP (100)Journées de la Société Française de métallurgie et matériaux (SF2M), Jun 2009, Rennes, France. pp.W. Lu |
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Light emitting diodes on silicon substrates: preliminary resultsTNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩ |
First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩ |
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Croissance par MBE de Boites quantiques InP sur GaP/Sijournées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1 |
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Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate(International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1 |
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩ |
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Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dotsIndium Phosphide and Related Materials, May 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702968⟩ |
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Photoluminescence de nanostructures sur substrat GaP/SiJournées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1 |
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InAs quantum wires on InP substrate for VCSEL applicationsIndium Phosphide & Related Materials IPRM, 2008, Versailles, France. pp.1, ⟨10.1109/ICIPRM.2008.4703028⟩ |
Réalisation d'un VCSEL à pompage électrique, accordable en longueurd'onde pour la bande CJournées Nationales Optique Guidée JNOG, 2008, Lannion, France |
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Émission de boites quantiques au delà de 1.55 µmJournées Nano-Micro et Optoélectronique, Jun 2008, Oléron, France |
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Preliminary results for the realization of light emitters on silicon substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1 |
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Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface densityInternational Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1 |
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Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasersInternational Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '08), Sep 2008, Nottingham, United Kingdom. p 1-2, ⟨10.1109/NUSOD.2008.4668208⟩ |
A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.889, ⟨10.1063/1.2730177⟩ |
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Optically enhanced nuclear spin polarization in InP28th International Conference on the Physics of Semiconductors (ICPS-28), Jul 2006, Vienna, Austria. pp.1347-1348, ⟨10.1063/1.2730402⟩ |
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Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.991, ⟨10.1063/1.2730228⟩ |
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InAs quantum dots grown on GaAsSb buffer layer lattice matched on InP2nd SANDiE Workshop on Characterization and modelling of self-assembled semiconductor nanostructures, Dec 2007, Paris, France. pp.W. Lu |
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Optical properties and morphology of the quantum dots InAs/InP (311)B characterized by photoluminescenceLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1 |
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1.55-µm optically pumped tunable VCSEL based on a nano-polymer dispersive liquid crystal phase modulatorPhotonics Europe, Apr 2006, Strasbourg, France. pp.61850W, ⟨10.1117/12.662232⟩ |
Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitationICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. pp.454, ⟨10.1002/pssc.200673214⟩ |
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Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.141, ⟨10.1051/jp4:2006135031⟩ |
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Étude de dispositifs optiques à microcavité verticale pour une émission laser polarisée9ème Colloque sur les Lasers et l'Optique Quantique, Sep 2005, Dijon, France. p. 125-126, ⟨10.1051/jp4:2006135025⟩ |
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Growth of quantum wires for long-wavelength VCSEL with a polarized laser emissionInternational Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), Mar 2006, Paris, France. p 1-2 |
InAs self-assembled quantum dot and quantum dash lasers on InP for 1.55 µm optical telecommunicationsInternational Conference on Information & Communication Technologies: from Theory to Applications ((ICTTA), 2006, Damascus, Syria. pp.2085, ⟨10.1109/ICTTA.2006.1684723⟩ |
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Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitationIWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Mar 2006, Paris, France. pp.1 |
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Low threshold current density (311)B QD lasersSixth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces, Apr 2006, Nottingham, United Kingdom |
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InAsSb/InGaAs quantum nanostructures on InP (100)substrate: observation of 2.35 μm photoluminescence32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.524, ⟨10.1002/pssc.200564132⟩ |
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Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing propertiesSandie Optics Task Force meeting, Technische Universitat Berlin, January 12-13 (2006), Jan 2006, Berlin, Germany. pp.1 |
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InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 μm photoluminescence4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix, France. pp.3920, ⟨10.1002/pssc.200671622⟩ |
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Dispersion monitoring for high-speed WDM networks via two-photon absorption in a semiconductor microcavityICTON, International Conference on Transparent Optical Networks, Jun 2006, Nottingham, United Kingdom. pp.138, ⟨10.1109/ICTON.2006.248520⟩ |
Charge carrier redistribution in ordered Arrays of laterally coupled self-assembled quantum dotsUK Compound Semiconductors conference, Jul 2006, Sheffield, United Kingdom. pp.1 |
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Theoretical Description Of The Electronic Coupling Between A Wetting Layer And A QD Superlattice PlaneInternational Conference on Physics of Semiconductors (ICPS 27), Jul 2004, Flagstaff, United States. pp.787, ⟨10.1063/1.1994342⟩ |
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All-optical sampling based on TPA in semiconductor microcavity for high-speed OTDMOPTO-Ireland 2005, Jun 2005, Dublin, Ireland. Vol.5825, pp.316-325, ⟨10.1117/12.604835⟩ |
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First observation of wavelength greater than 2 microns photoluminescence of quantum dots on InP (100) substrate"Mid Infrared Optoelectronics : Materials and Devices" conference, Lancaster, UK, September (2005)., Sep 2005, Lancaster, United Kingdom. pp.1 |
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Highly-Efficient Optical Sampling Based on Two-Photon Absorption in a Semi-Conductor Micro-Cavity DeviceConference on Lasers and Electro-Optics / Quantum Electronics and Laser Science Conference (CLEO/QELS 2005), May 2005, Baltimore (MD), United States. pp.CTuAA5 (CD version only) |
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First observation of 2.4 microns photoluminescence of InAsSb/InP quantum dots on (100) InP substrateNarrow Gap Semiconductors conference, Jul 2005, Toulouse, France. pp.1 |
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Design and Fabrication of GaInAsP-InP VCSEL with two a-Si/a-SiNx Bragg ReflectorsInternational Workshop on PHysics & Applications of SEmiconductor LASERS, Mar 2005, Metz, France. p1 |
InAsSb/InP quantum dots for midwave infrared emitters : a theoretical studyMid Infrared Optoelectronics : Materials and Devices : MIOMD conference, 2005, Lancaster, United Kingdom. pp.1 |
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Polycristalline silicon with very low phosporus contentPoster : ICAN'2005, Sep 2005, Lisbonne, Portugal |
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Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasersPHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1 |
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Properties of 1.55 microns quantum dots: Simulation, calculation and optical characterizationinvited seminar at the KU Leuven, 2005, Leuven, Belgium |
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Lasers à îlots quantiques InAs/InP émettant à 1.55 µm pompés électriquement10èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, La Grande Motte, France |
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesjournée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1 |
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesJournées de la matière condensée, 2004, Nancy, France. pp.1 |
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Reciprocal space description of the electronic coupling between a wetting layer and a QD superlattice planeCECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1 |
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Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: Towards a 1.55 µm Quantum Dot Laser12th international conference on Molecular Beam Epitaxy (MBE 2002), Sep 2002, San Francisco (CA), United States. pp.230-235, ⟨10.1016/S0022-0248(02)02473-9⟩ |
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Caractérisation par Spectroscopie de Photo-courant de Boîtes Quantiques InAs/InP(113)b et (100)Journée Nationale Boîtes Quantiques, Jun 2003, Marcoussis, France |
Fundamental emission of InAs/InP quantum dots laser at 1.52 µm26th International Conference on the Physics of Semiconductors (ICPS-26), Aug 2002, Edinburgh, United Kingdom |
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Caractérisations optiques des boites quantiques InAs/InP émettant à 1.55 µm9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France |
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Lasers à îlots quantiques InAs/InP émettant à 1.53µm sur la transition fondamentale8èmes Journées de la Matière Condensée (JMC8), Sep 2002, Marseille, France |
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Lasers à base d'îlots quantiques InAs/Inp(100) et (311)B9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France |
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Structural & Spectroscopic Study of InAs/InP Quantum Dots for Dual-Frequency Laser Engineering16è Journées Nano, Micro et Optoélectronique (JNMO 2018), Jun 2018, Agay, France |
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Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser on InPCompound Semiconductor Week 2017 (CSW 2017) - 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017), May 2017, Berlin, Germany. |
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Class-A Operation of InAs Quantum Dash-based Vertical-External-Cavity Surface-Emitting LaserConference on Lasers and Electro-Optics (CLEO 2017), May 2017, San Jose, United States. OSA (ISBN: 978-1-943580-27-9), OSA Publishing, Tuesday Posters Session (JTu5A), pp. JTu5A.109, 2017, CLEO: Applications and Technology 2017. ⟨10.1364/CLEO_AT.2017.JTu5A.109⟩ |
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Investigation of a Quantum Dot Vertical External-Cavity Surface-Emitting Laser: Towards THz Frequency Generation37è Journées Nationales d'Optique Guidée (JNOG 2017), Jul 2017, Limoges, France. 2017 |
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Enhancement of VCSEL performances with a new bonding process15è Journées Nano, Micro et Optoélectronique (JNMO 2016), May 2016, Les Issambres, France. |
Etudes et caractérisations de V(E)CSELs émettant à 1.55 µm sur InPOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France |
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Carbon nanotubes incorporated-hybrid waveguides for photonics applications17th European Conference on Integrated Optics & 19th MicroOptics Conference (ECIO-MOC 2014), Jun 2014, Nice, France. , ecio-conference.org, pp.P009, 2014, 2014 Proceedings |
Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩ |