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Hervé Folliot
149
Documents
Identifiants chercheurs
- herve-folliot
- IdRef : 13913266X
- 0000-0002-1392-4865
Présentation
Publications
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Through investigation of mode-coupling in VECSELs: towards robust dual-frequency operation of a single-axis laserSPIE Photonics West - LASE 2020, Feb 2020, San Francisco, United States
Communication dans un congrès
hal-03019841v1
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1545 nm Quantum Dot Vertical Cavity Surface Emitting Laser with low thresholdCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France
Communication dans un congrès
hal-02290603v1
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Spectral Hole Burning Spectroscopy on Quantum Dashes and Quantum Dots for Dual-Frequency Laser EngineeringCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France. pp.1-2
Communication dans un congrès
hal-02290557v1
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Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSELCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, Japan. pp.1-2
Communication dans un congrès
hal-02290594v1
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1.5 µm Quantum Dots Spectral Hole Burning experiments for dual frequency laser engineering34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès
hal-01859151v1
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Réalisation et optimisation de composants photoniques à base de nanotubes de carboneColloque Francophone du Carbone, Société Francophone de l'Etude des Carbones, Apr 2017, Oléron, France
Communication dans un congrès
hal-02493815v1
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Enhancement of VCSEL performances using a novel bonding process based on localized electroplating copper through Silicon vias9th European Workshop on VCSELs (VCSEL Day 2016), TU Darmstadt, Jun 2016, Darmstadt, Germany
Communication dans un congrès
hal-01328020v1
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Optical properties of integrated waveguides incorporating semiconducting single-wall carbon nanotubesEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Communication dans un congrès
hal-01337458v1
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Finely tunable 1.55 µm emitting VeCSELs for embedded and compact optical and microwave systems3rd European Workshop on VeCSELs (VeCSEL 2015), IES - Institut d’Electronique et des Systèmes (Université de Montpellier), Nov 2015, Montpellier, France. pp.23
Communication dans un congrès
hal-01245789v1
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Luminescence guidée dans des guides d’onde intégrés incorporant des nanotubes de carboneOptique Bretagne 2015 - 35è Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France
Communication dans un congrès
hal-02429456v1
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Accurate measurement of temperature and electrochemical potential of InGaAsPlInP heterostructures: a first indication of hot carriers solar cell operation2014 IEEE 40th Photovoltaic Specialists Conference (PVSC 2014), Jun 2014, Denver, United States
Communication dans un congrès
hal-01166777v1
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Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substratesEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Communication dans un congrès
hal-01115019v1
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Composition profiles in InP/InAsP quantum well structures under the effect of reactives gases during dry etching processes — Luminescence and SIMS26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.P7, ⟨10.1109/ICIPRM.2014.6880554⟩
Communication dans un congrès
hal-01132900v1
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Characterization of InP/InGaAsP-multi-quantum-wells heterostructures for high efficiency solar energy conversionCompound Semiconductor Week 2014 - 41st International Symposium on Compound Semiconductors (ISCS 2014), May 2014, Montpellier, France
Communication dans un congrès
hal-01166784v1
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Transition metal clusters containing luminescent hybrid liquid crystal in the design of electroswitchable devices25th International Liquid Crystal Conference (ILCC 2014), Jun 2014, Dublin, Ireland
Communication dans un congrès
hal-01068282v1
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918734v1
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Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium compositioneuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918669v1
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Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiquesJournées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France
Communication dans un congrès
hal-00918787v1
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InP/InGaAsP Heterostructures for Hot Carrier Solar Cells (HCSC)28th European Photovoltaic Solar Energy Conference (EU PVSEC 2013), Sep 2013, Paris, France. pp.127-128, ⟨10.4229/28thEUPVSEC2013-1DO.4.3⟩
Communication dans un congrès
hal-01166800v1
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730v1
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Carrier lifetime and relaxation dynamics in (In)GaAs/GaP quantum dotsInternational Symposium on Physics and Applications of Laser Dynamics IS-PALD, Oct 2013, Paris, France
Communication dans un congrès
hal-00918752v1
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Sb surface mediated growth of InAs on InP(100) and (311)B substratesEuro-mbe conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918667v1
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Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayersInternational Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
Communication dans un congrès
hal-00809031v1
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Hot Carrier Solar Cell: From Simulation to Devices27th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2012), Sep 2012, Frankfurt, Germany. pp.89, ⟨10.4229/27thEUPVSEC2012-1BO.9.4⟩
Communication dans un congrès
hal-00842742v1
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès
hal-00726861v1
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526v1
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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès
hal-00654337v1
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285v1
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Thermoelectric properties of InAs/InP nanostructuresMicrotechnology and Thermal Problems in Electronics (Microthem 2011), Jun 2011, Lodz, Poland
Communication dans un congrès
hal-00663179v1
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Thermoelectric properties of InAs/InP nanostructuresEuromat 2011, Sep 2011, Montpellier, France
Communication dans un congrès
hal-00663177v1
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QD laser on InP substrate for 1.55 µm emission and beyondSPIE Photonics West - OPTO 2010, Jan 2010, San Francisco, United States. pp.76081B, ⟨10.1117/12.848398⟩
Communication dans un congrès
hal-00485660v1
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Lasers à boites quantiques sur InP pour les applications télécom à 1,55 µmSéminaire PONANT 2010, Jul 2010, Rennes, France
Communication dans un congrès
hal-00662947v1
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Caractérisation dynamique de la stabilité de polarisation des VCSELs à fils quantiques pour les applications télécomJNOG 2010 : 29e journées nationales d'optique guidée, Oct 2010, Besançon, France
Communication dans un congrès
hal-00565930v1
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506v1
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Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy30th International Conference on the Physics of Semiconductors (ICPS 2010), Jul 2010, Seoul, South Korea. pp.102413, ⟨10.1063/1.3577960⟩
Communication dans un congrès
hal-00663265v1
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Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaPINNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1
Communication dans un congrès
hal-00504484v1
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Polarization controlled quantum dashes VCSELs15th European Conference on Integrated Optics (ECIO 2010), Apr 2010, Cambridge, United Kingdom
Communication dans un congrès
hal-00485721v1
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Caractérisation dynamique de la stabilité de polarisation des VCSELs a fils quantiques pour la réalisation de sources telecom accordablesSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.15-17
Communication dans un congrès
hal-00589384v1
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Lasers devices based on nanostructures grown on InP substrate for 1.55 μm emissionWorkshop Frontier 2010, Dec 2010, Albi, France
Communication dans un congrès
hal-00589343v1
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Transition fils boites dans le système InAs/InP (100)Journées de la Société Française de métallurgie et matériaux (SF2M), Jun 2009, Rennes, France. pp.W. Lu
Communication dans un congrès
hal-00486673v1
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Light emitting diodes on silicon substrates: preliminary resultsTNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩
Communication dans un congrès
hal-00491905v1
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Réalisation d'un VCSEL à pompage électrique, accordable en longueurd'onde pour la bande CJournées Nationales Optique Guidée JNOG, 2008, Lannion, France
Communication dans un congrès
hal-00485286v1
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InAs quantum wires on InP substrate for VCSEL applicationsIndium Phosphide & Related Materials IPRM, 2008, Versailles, France. pp.1, ⟨10.1109/ICIPRM.2008.4703028⟩
Communication dans un congrès
hal-00485271v1
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Photoluminescence de nanostructures sur substrat GaP/SiJournées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00489402v1
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Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasersInternational Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '08), Sep 2008, Nottingham, United Kingdom. p 1-2, ⟨10.1109/NUSOD.2008.4668208⟩
Communication dans un congrès
hal-00490938v1
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Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface densityInternational Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1
Communication dans un congrès
hal-00491786v1
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Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dotsIndium Phosphide and Related Materials, May 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702968⟩
Communication dans un congrès
hal-00487204v1
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Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate(International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00491776v1
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩
Communication dans un congrès
hal-00501639v1
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Émission de boites quantiques au delà de 1.55 µmJournées Nano-Micro et Optoélectronique, Jun 2008, Oléron, France
Communication dans un congrès
hal-00489409v1
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Preliminary results for the realization of light emitters on silicon substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00491914v1
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First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
Communication dans un congrès
hal-00491426v1
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Croissance par MBE de Boites quantiques InP sur GaP/Sijournées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1
Communication dans un congrès
hal-00491778v1
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Optical properties and morphology of the quantum dots InAs/InP (311)B characterized by photoluminescenceLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1
Communication dans un congrès
hal-00491995v1
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InAs quantum dots grown on GaAsSb buffer layer lattice matched on InP2nd SANDiE Workshop on Characterization and modelling of self-assembled semiconductor nanostructures, Dec 2007, Paris, France. pp.W. Lu
Communication dans un congrès
hal-00486709v1
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Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitationIWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Mar 2006, Paris, France. pp.1
Communication dans un congrès
hal-00491870v1
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InAs self-assembled quantum dot and quantum dash lasers on InP for 1.55 µm optical telecommunicationsInternational Conference on Information & Communication Technologies: from Theory to Applications ((ICTTA), 2006, Damascus, Syria. pp.2085, ⟨10.1109/ICTTA.2006.1684723⟩
Communication dans un congrès
hal-00485709v1
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Dispersion monitoring for high-speed WDM networks via two-photon absorption in a semiconductor microcavityICTON, International Conference on Transparent Optical Networks, Jun 2006, Nottingham, United Kingdom. pp.138, ⟨10.1109/ICTON.2006.248520⟩
Communication dans un congrès
hal-00487210v1
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Charge carrier redistribution in ordered Arrays of laterally coupled self-assembled quantum dotsUK Compound Semiconductors conference, Jul 2006, Sheffield, United Kingdom. pp.1
Communication dans un congrès
hal-00491858v1
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Growth of quantum wires for long-wavelength VCSEL with a polarized laser emissionInternational Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), Mar 2006, Paris, France. p 1-2
Communication dans un congrès
hal-00491379v1
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Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.991, ⟨10.1063/1.2730228⟩
Communication dans un congrès
hal-00491468v1
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Low threshold current density (311)B QD lasersSixth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces, Apr 2006, Nottingham, United Kingdom
Communication dans un congrès
hal-00485670v1
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Optically enhanced nuclear spin polarization in InP28th International Conference on the Physics of Semiconductors (ICPS-28), Jul 2006, Vienna, Austria. pp.1347-1348, ⟨10.1063/1.2730402⟩
Communication dans un congrès
hal-00440489v1
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Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing propertiesSandie Optics Task Force meeting, Technische Universitat Berlin, January 12-13 (2006), Jan 2006, Berlin, Germany. pp.1
Communication dans un congrès
hal-00504470v1
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InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 μm photoluminescence4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix, France. pp.3920, ⟨10.1002/pssc.200671622⟩
Communication dans un congrès
hal-00491729v1
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Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitationICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. pp.454, ⟨10.1002/pssc.200673214⟩
Communication dans un congrès
hal-00491873v1
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A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.889, ⟨10.1063/1.2730177⟩
Communication dans un congrès
hal-00491466v1
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1.55-µm optically pumped tunable VCSEL based on a nano-polymer dispersive liquid crystal phase modulatorPhotonics Europe, Apr 2006, Strasbourg, France. pp.61850W, ⟨10.1117/12.662232⟩
Communication dans un congrès
hal-00488203v1
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Highly-Efficient Optical Sampling Based on Two-Photon Absorption in a Semi-Conductor Micro-Cavity DeviceConference on Lasers and Electro-Optics / Quantum Electronics and Laser Science Conference (CLEO/QELS 2005), May 2005, Baltimore (MD), United States. pp.CTuAA5 (CD version only)
Communication dans un congrès
hal-00023170v1
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First observation of 2.4 microns photoluminescence of InAsSb/InP quantum dots on (100) InP substrateNarrow Gap Semiconductors conference, Jul 2005, Toulouse, France. pp.1
Communication dans un congrès
hal-00504441v1
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First observation of wavelength greater than 2 microns photoluminescence of quantum dots on InP (100) substrate"Mid Infrared Optoelectronics : Materials and Devices" conference, Lancaster, UK, September (2005)., Sep 2005, Lancaster, United Kingdom. pp.1
Communication dans un congrès
hal-00504462v1
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Properties of 1.55 microns quantum dots: Simulation, calculation and optical characterizationinvited seminar at the KU Leuven, 2005, Leuven, Belgium
Communication dans un congrès
hal-00504414v1
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Étude de dispositifs optiques à microcavité verticale pour une émission laser polarisée9ème Colloque sur les Lasers et l'Optique Quantique, Sep 2005, Dijon, France. p. 125-126, ⟨10.1051/jp4:2006135025⟩
Communication dans un congrès
hal-00491469v1
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InAsSb/InP quantum dots for midwave infrared emitters : a theoretical studyMid Infrared Optoelectronics : Materials and Devices : MIOMD conference, 2005, Lancaster, United Kingdom. pp.1
Communication dans un congrès
hal-00504452v1
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Design and Fabrication of GaInAsP-InP VCSEL with two a-Si/a-SiNx Bragg ReflectorsInternational Workshop on PHysics & Applications of SEmiconductor LASERS, Mar 2005, Metz, France. p1
Communication dans un congrès
hal-00491400v1
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InAsSb/InGaAs quantum nanostructures on InP (100)substrate: observation of 2.35 μm photoluminescence32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.524, ⟨10.1002/pssc.200564132⟩
Communication dans un congrès
hal-00491737v1
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Polycristalline silicon with very low phosporus contentPoster : ICAN'2005, Sep 2005, Lisbonne, Portugal
Communication dans un congrès
hal-00779445v1
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Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasersPHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1
Communication dans un congrès
hal-00504411v1
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All-optical sampling based on TPA in semiconductor microcavity for high-speed OTDMOPTO-Ireland 2005, Jun 2005, Dublin, Ireland. Vol.5825, pp.316-325, ⟨10.1117/12.604835⟩
Communication dans un congrès
hal-00022998v1
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Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.141, ⟨10.1051/jp4:2006135031⟩
Communication dans un congrès
hal-00491480v1
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesJournées de la matière condensée, 2004, Nancy, France. pp.1
Communication dans un congrès
hal-00504395v1
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesjournée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1
Communication dans un congrès
hal-00504407v1
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Reciprocal space description of the electronic coupling between a wetting layer and a QD superlattice planeCECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1
Communication dans un congrès
hal-00504404v1
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Lasers à îlots quantiques InAs/InP émettant à 1.55 µm pompés électriquement10èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, La Grande Motte, France
Communication dans un congrès
hal-00149423v1
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Theoretical Description Of The Electronic Coupling Between A Wetting Layer And A QD Superlattice PlaneInternational Conference on Physics of Semiconductors (ICPS 27), Jul 2004, Flagstaff, United States. pp.787, ⟨10.1063/1.1994342⟩
Communication dans un congrès
hal-00504383v1
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Caractérisation par Spectroscopie de Photo-courant de Boîtes Quantiques InAs/InP(113)b et (100)Journée Nationale Boîtes Quantiques, Jun 2003, Marcoussis, France
Communication dans un congrès
hal-00727535v1
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Lasers à îlots quantiques InAs/InP émettant à 1.53µm sur la transition fondamentale8èmes Journées de la Matière Condensée (JMC8), Sep 2002, Marseille, France
Communication dans un congrès
hal-00151208v1
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Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: Towards a 1.55 µm Quantum Dot Laser12th international conference on Molecular Beam Epitaxy (MBE 2002), Sep 2002, San Francisco (CA), United States. pp.230-235, ⟨10.1016/S0022-0248(02)02473-9⟩
Communication dans un congrès
hal-00151117v1
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Fundamental emission of InAs/InP quantum dots laser at 1.52 µm26th International Conference on the Physics of Semiconductors (ICPS-26), Aug 2002, Edinburgh, United Kingdom
Communication dans un congrès
hal-00151203v1
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Caractérisations optiques des boites quantiques InAs/InP émettant à 1.55 µm9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France
Communication dans un congrès
hal-00148534v1
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Lasers à base d'îlots quantiques InAs/Inp(100) et (311)B9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France
Communication dans un congrès
hal-00148526v1
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Structural & Spectroscopic Study of InAs/InP Quantum Dots for Dual-Frequency Laser Engineering16è Journées Nano, Micro et Optoélectronique (JNMO 2018), Jun 2018, Agay, France
Poster de conférence
hal-01859165v1
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Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser on InPCompound Semiconductor Week 2017 (CSW 2017) - 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017), May 2017, Berlin, Germany.
Poster de conférence
hal-01532477v1
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Class-A Operation of InAs Quantum Dash-based Vertical-External-Cavity Surface-Emitting LaserConference on Lasers and Electro-Optics (CLEO 2017), May 2017, San Jose, United States. OSA (ISBN: 978-1-943580-27-9), OSA Publishing, Tuesday Posters Session (JTu5A), pp. JTu5A.109, 2017, CLEO: Applications and Technology 2017. ⟨10.1364/CLEO_AT.2017.JTu5A.109⟩
Poster de conférence
hal-01532491v1
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Investigation of a Quantum Dot Vertical External-Cavity Surface-Emitting Laser: Towards THz Frequency Generation37è Journées Nationales d'Optique Guidée (JNOG 2017), Jul 2017, Limoges, France. 2017
Poster de conférence
hal-01693879v1
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Enhancement of VCSEL performances with a new bonding processPoster de conférence hal-01328013v1 |
Etudes et caractérisations de V(E)CSELs émettant à 1.55 µm sur InPOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France
Poster de conférence
hal-01245753v1
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Carbon nanotubes incorporated-hybrid waveguides for photonics applications17th European Conference on Integrated Optics & 19th MicroOptics Conference (ECIO-MOC 2014), Jun 2014, Nice, France. , ecio-conference.org, pp.P009, 2014, 2014 Proceedings
Poster de conférence
hal-01144745v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩
Poster de conférence
hal-00918662v1
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