Jean-Luc Autran
234
Documents
Publications
Publications
Single-Event Effects, from Space to Accelerator EnvironmentsSpringer International Publishing, 2025, ISBN978-3-031-71723-9. ⟨10.1007/978-3-031-71723-9⟩
Ouvrages
hal-04980620
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Advances in Semiconductor Physics, Devices and Quantum Dots - Nanotechnology and Future ChallengesIntechOpen. , 2025, 978-0-85466-511-2. ⟨10.5772/intechopen.111359⟩
Ouvrages
hal-05342391
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Soft Errors : from particles to circuitsTaylor & Francis/CRC Press. , 2015, 978-1-4665-9083-0
Ouvrages
hal-02107670
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Maryla Falk, de Lemberg à Chamonix, une vie (1906-1980)Revue de la Maison Alexandra David Néel (ISBN 9 782958 329952), 2025, pp.56-69
Autre publication scientifique
hal-05224597
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Real-Time SER measurements of CMOS Bulk 40 nm and 65 nm SRAMs combined with neutron spectrometry at the JET Tokamak during D-D and D-T plasma operationNSREC 2024 - 2024 IEEE Nuclear and Space Radiation Effects Conference, Jul 2024, Ottawa, Canada
Communication dans un congrès
hal-04613462
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Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMsEuropean Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Oct 2023, Toulouse, France
Communication dans un congrès
hal-04177735
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Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST TokamakEuropean Workshop on Radiation and its Effects on Components and Systems (RADECS 2023), Sep 2023, Toulouse, France
Communication dans un congrès
hal-04139407
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Preliminary Study of Electronics Reliability in ITER Neutron EnvironmentEuropean Workshop on Radiation and its Effects on Components and Systems (RADECS 2022), Oct 2022, Venise, Italy. ⟨10.1109/RADECS55911.2022.10412483⟩
Communication dans un congrès
hal-03735989
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Multi-scale, multi-physics modeling and simulation of single-event effects at device and circuit levelsIEEE Nuclear and Space Radiation Effects Conference (NSREC 2022), Jul 2022, Provo, United States
Communication dans un congrès
hal-03796081
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Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutronsEuropean Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Oct 2021, Bordeaux, France
Communication dans un congrès
hal-03358407
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Real-Time Characterization of Neutron-induced SEUs in Fusion Experiment at WEST Tokamak during D-D Plasma OperationIEEE Nuclear and Space Radiation Effects Conference (NSREC 2021), Jul 2021, Ottawa, Canada
Communication dans un congrès
hal-03359535
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Electronics reliability of future power fusion machines: numerical investigations at silicon levelEuropean Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Oct 2021, Bordeaux, France
Communication dans un congrès
hal-03358419
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Effect of Temperature on Single Event Latchup SensitivityInternational Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Apr 2020, Marrakech, Morocco. ⟨10.1109/dtis48698.2020.9081275⟩
Communication dans un congrès
hal-03187841
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Terrestrial Neutron-Induced Single Events in GaN30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France
Communication dans un congrès
hal-02263529
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Modeling and Simulation of SEU in Bulk Si and Ge SRAM30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France
Communication dans un congrès
hal-02263530
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Atmospheric Neutron Radiation Response of III-V Binary Compound SemiconductorsEuropean Workshop on Radiation and its Effects on Components and Systems (RADECS 2019), Sep 2019, Biarritz, France
Communication dans un congrès
hal-02263545
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Impact of Complex-Logic Cell Layout on the Single-Event Transient SensitivityIEEE RADECS2018, Sep 2018, Goteborg, Sweden
Communication dans un congrès
hal-02086422
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Effet des neutrons atmosphériques sur l'électronique SiC et GaNJournée du Groupement des Industries Françaises Aéronautiques et Spatiales, GIFAS 2018, Nov 2018, Paris, France
Communication dans un congrès
hal-02100118
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Analysis of the charge sharing effect in the SET sensitivity of bulk 45nm standard cell layouts under heavy ions29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark
Communication dans un congrès
hal-02086379
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Q-Learning-based Adaptive Power Management for IoT System-an-Chips with Embedded Power StatesIEEE International Symposium on Circuits and Systems (ISCAS), May 2018, Florence, Italy
Communication dans un congrès
hal-02111130
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Single Event Effects: the effects of Single particles on electronics. Space, aerospace and groundANNIMA 2017, Jun 2017, Liège, Belgium
Communication dans un congrès
hal-01788355
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Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France
Communication dans un congrès
hal-01787612
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Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1D Case Applied to 28 nm FD-SOI DevicesNSREC 2017, Jul 2017, New Orleans, United States
Communication dans un congrès
hal-01788174
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A 0.40 pJ/cycle 981 μm2 Voltage Scalable Digital Frequency Generator for SoC Clocking2017 IEEE Asian Solid-State Circuits Conference (A-SSCC 2017), Nov 2017, Seoul, South Korea
Communication dans un congrès
hal-01788358
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A 2.7pJ/cycle 16MHz SoC with 4.3nW Power-Off ARM Cortex-M0+ Core in 28nm FD-SOIESSCIRC 2017, Sep 2017, Leuven, Belgium
Communication dans un congrès
hal-01788172
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Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France
Communication dans un congrès
hal-01787603
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Natural radiation events in CCD imager at ground level27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2016, Halle, Germany
Communication dans un congrès
hal-01456909
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Investigating the Single-Event-Transient Sensitivity of 65 nm Clock Trees with Heavy Ion Irradiation and Monte-Carlo Simulation2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016, Unknown, Unknown Region
Communication dans un congrès
hal-01435110
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A 28nm FD-SOI Standard Cell 0.6-1.2V Open-Loop Frequency Multiplier for Low Power SoC Clocking2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2016, Unknown, Unknown Region. pp.1206-1209
Communication dans un congrès
hal-01434957
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A Layout-Based Fault Injection Methodology for SER Prediction: Implementation and Correlation with 65nm Heavy Ion Experimental ResultsProceedings of IEEE Nuclear and Space Radiation Effects Conference (NSREC), Jul 2016, New Orleans, United States
Communication dans un congrès
hal-02288532
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Atmospheric radiation and COTS at ground levelESREF Conference, Oct 2015, Toulouse, France
Communication dans un congrès
hal-02101398
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3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFETESREF Conference, Oct 2015, Toulouse, France
Communication dans un congrès
hal-02100246
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ASTEP (2005-2015): Ten Years of Soft Error and Atmospheric Radiation Characterizations on the Plateau de BureESREF Conference, Oct 2015, Toulouse, France
Communication dans un congrès
hal-02101357
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Investigation of Alpha Emissivity as a Function of Time51th IEEE Nuclear Space and Radiation Effects Conference, 2015, Boston, United States
Communication dans un congrès
hal-01824780
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SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD SimulationESREF Conference, Oct 2015, Toulouse, France
Communication dans un congrès
hal-02100273
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Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased junctions Embedded in CircuitsIEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Jul 2014, Paris, France
Communication dans un congrès
hal-04373073
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Particle Monte Carlo Modeling of Single-Event Transient Current and Charge Collection in Integrated CircuitsEuropean Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2014), Sep 2014, Berlin, Germany
Communication dans un congrès
hal-04373126
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Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude Vs. Underground Experiments, Modeling and Numerical Monte Carlo SimulationNSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France
Communication dans un congrès
lirmm-01237717
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Radiation Sensitivity of Junctionless Double-Gate 6T SRAM Cells Investigated by 3-D Numerical SimulationEuropean Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2014), Sep 2014, Berlin, Germany
Communication dans un congrès
hal-04373115
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Real-Time Testing of 90nm COTS SRAMs at Concordia Station in AntarcticaNSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France
Communication dans un congrès
lirmm-01237709
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Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nmIEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Jul 2014, Paris, France
Communication dans un congrès
hal-04373085
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Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013, Washington, United States. ⟨10.1109/IEDM.2013.6724728⟩
Communication dans un congrès
hal-01430081
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Understanding evolving risks of single event effects14th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2013), Sep 2013, Oxford, United Kingdom
Communication dans un congrès
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Soft Errors Induced by Natural Radiation at Ground Level in Floating Gate Flash Memories2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013, Monterey, United States. ⟨10.1109/IRPS.2013.6531992⟩
Communication dans un congrès
hal-01430082
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Proton Flux Anisotropy in the Atmosphere: Experiment and ModelingRADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2012, Biarritz, France. pp.1-4
Communication dans un congrès
lirmm-00805150
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A Silicon Diode Based Detector for the Natural Radiative Environment Measurement in AltitudeIEEE (Nuclear Plasma Society) Real Time Conference, Jun 2012, Berkeley, CA, United States. pp.1-6, ⟨10.1109/RTC.2012.6418104⟩
Communication dans un congrès
lirmm-00805169
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Electronic transport in GAA silicon nanowire MOSFETs: from Kubo-Greenwood mobility including screening remote coulomb scattering to analytical backscattering coefficient2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012, Madison, WI, United States
Communication dans un congrès
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Effects of Low Energy Muons on Electronics: Physical Insights and Geant4 SimulationEuropean Workshop on Radiation and its Effects on Components and Systems (RADECS 2012), Sep 2012, Biarritz (France), France
Communication dans un congrès
hal-04376254
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Real-Time Soft-Error Testing of 40nm SRAMs2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241814⟩
Communication dans un congrès
hal-01430086
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A Review of Real-Time Soft-Error Rate Measurements in Electronic Circuits2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241843⟩
Communication dans un congrès
hal-01430087
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Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMsIEEE Nuclear and Space Radiation Effects Conference (NSREC 2012), Jul 2012, Miami (FL), United States
Communication dans un congrès
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Energy bands calculation in nanostructured meta-materials for solar cell applicationsPhotovoltaic Technical Conference – Thin Film & Advanced Solutions 2011 (PV-TC 2011), May 2011, Aix-en-Provence, France
Communication dans un congrès
hal-04386570
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3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs under Heavy-Ion Irradiation12th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.73-76, ⟨10.1109/RADECS.2011.6131370⟩
Communication dans un congrès
hal-04386582
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Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.524-527, ⟨10.1109/RADECS.2011.6131359⟩
Communication dans un congrès
hal-04390971
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GEANT4 analysis of n-Si nuclear reactions from different sources of neutrons and its implication on soft-error rate12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.11-14, ⟨10.1109/RADECS.2011.6131292⟩
Communication dans un congrès
hal-04391012
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Modeling of energy bands in quantum dot superlattices for solar cell applications8th Symposium SiO2, Advanced Dielectrics and Related Devices (2010), Jun 2010, Varenna, Italy
Communication dans un congrès
hal-04393615
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Effects of gate stack parasitic charge on current-voltage characteristics of high-k/SiO2/Ge-channel Double-Gate MOSFETs8th Symposium SiO2, Advanced Dielectrics and Related Devices (2010), Jun 2010, Varenna, Italy
Communication dans un congrès
hal-04393620
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Alpha-Particle Induced Soft-Error Rate in CMOS 130nm SRAM11th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2010), Sep 2010, Längenfeld, Austria
Communication dans un congrès
hal-04393659
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A GPU/CUDA Implementation of the Collection-Diffusion Model to Compute SER of Large Area and Complex CircuitsInternational Conference on Integrated Circuit Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.67-70, ⟨10.1109/ICICDT.2010.5510293⟩
Communication dans un congrès
hal-04393640
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Alpha-emitter induced soft-errors in CMOS 130nm SRAM: Real-time underground experiment and Monte-Carlo simulationInternational Conference on Integrated Circuit Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.220-223, ⟨10.1109/ICICDT.2010.5510250⟩
Communication dans un congrès
hal-04393654
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Simulation study of short-channel effects and quantum confinement in Double-Gate FinFET devices with high-mobility materialsEuropean-Material Research Society (E-MRS) 2010 Spring Meeting, Jun 2010, Strasbourg, France
Communication dans un congrès
hal-04393626
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Compact Modeling of Quasi-Ballistic Transport and Quantum Mechanical Confinement in Nanowire MOSFETs: Circuit Performances Analysis2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2009, Sain-Diego,CA, United States. pp.139-142, ⟨10.1109/SISPAD.2009.5290229⟩
Communication dans un congrès
hal-01430107
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Combined Altitude and Underground Real-Time SER Characterization of CMOS Technologies on the ASTEP-LSM Platform2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2009, Austin, TX, United States. pp.113-120, ⟨10.1109/ICICDT.2009.5166277⟩
Communication dans un congrès
hal-01430105
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Electron Mean-Free-Path Experimental Extraction on Ultra-Thin and Ultra-Short Strained and Unstrained FDSOI n-MOSFETs2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, Unknown, Unknown Region. pp.7-8, ⟨10.1109/SNW.2008.5418445⟩
Communication dans un congrès
hal-01759427
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A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate ArchitectureSISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, Unknown, Unknown Region. pp.377+, ⟨10.1109/SISPAD.2008.4648316⟩
Communication dans un congrès
hal-01759430
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Real-time neutron and alpha soft-error rate testing of CMOS 130nm SRAM: Altitude versus underground measurements2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, Unknown, Unknown Region. pp.233+, ⟨10.1109/ICICDT.2008.4567284⟩
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3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent GatesConference on Radiation Effects on Components and Systems (RADECS), Sep 2008, Jyväskylä, Finland. pp.280-283, ⟨10.1109/RADECS.2008.5782727⟩
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hal-01841105
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Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETsNSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, Unknown, Unknown Region. pp.877+
Communication dans un congrès
hal-01759433
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Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances38th European Solid State Device Research Conference (ESSDERC’2008), Sep 2008, Edinburg, United Kingdom
Communication dans un congrès
hal-01245391
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A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performance2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, Unknown, Unknown Region. pp.273+, ⟨10.1109/ICICDT.2008.4567294⟩
Communication dans un congrès
hal-01759429
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Modeling and Simulation of Single-Event Effects in Digital Devices and ICs10th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2007), Sep 2007, Deauville, France
Communication dans un congrès
hal-04388670
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Will strain be useful for 10 nm quasi-ballistic FDSOI devices? An experimental study2007 Symposium on VLSI Technology, Digest of Technical Papers, 2007, Kyoto, Japan. pp.128+, ⟨10.1109/VLSIT.2007.4339754⟩
Communication dans un congrès
hal-01759441
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Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, Unknown, Unknown Region. pp.61+, ⟨10.1109/IEDM.2007.4418863⟩
Communication dans un congrès
hal-01759439
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Modélisation et simulation du transport dans les fils quantiques de silicium : propriétés électroniques et applications aux transistorsProceedings Journées Nationales de Microélectronique et d'Optoélectronique (JNMO), 2006, Grenoble, France. pp.149
Communication dans un congrès
hal-00148251
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Nano-transistor MOS à ergotProceedings Journées Nationales de Microélectronique et d'Optoélectronique (JNMO), 2006, Grenoble, France. pp.275
Communication dans un congrès
hal-00148253
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Influence of Simulation Parameters on the Bipolar Amplification in Fully-Depleted SOI Technologies under Heavy-Ion Irradiations2005 8th European Conference on Radiation and Its Effects on Components and Systems, Sep 2005, Cap d'Agde, France. pp.G2-1-G2-6
Communication dans un congrès
hal-02025578
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Investigation of 30nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: a 3-D Simulation Study2005 8th European Conference on Radiation and Its Effects on Components and Systems, Sep 2005, Cap d'Agde, France. pp.G1-1-G1-8
Communication dans un congrès
hal-02025580
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Quantum short-channel compact modeling of drain-current in double-gate MOSFETPROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, Unknown, Unknown Region. pp.137-140, ⟨10.1109/ESSDER.2005.1546604⟩
Communication dans un congrès
hal-01759453
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An analytical subthreshold current model for ballistic double-gate MOSFETsNSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, Unknown, Unknown Region. pp.171-174
Communication dans un congrès
hal-01759463
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3D quantum modeling and simulation of multiple-gate nanowire MOSFETsIEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.617-620, ⟨10.1109/IEDM.2004.1419237⟩
Communication dans un congrès
hal-01759466
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Simulation studies of the parasitic structures involved in the SEU mechanisms in SRAMs5th European Workshop on Radiation and its Effects on Components and Systems, 2004, Madrid, Spain
Communication dans un congrès
hal-01806844
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A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystalsSilicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404
Communication dans un congrès
hal-00485182
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Poly-gate replacement through contact hole (PRETCH): A new method for high-K/metal gate and multi-oxide implementation on chipIEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.291-294, ⟨10.1109/IEDM.2004.1419136⟩
Communication dans un congrès
hal-01759469
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Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gatesNSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, Unknown, Unknown Region. pp.163-166
Communication dans un congrès
hal-01759462
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Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stackINTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, 2004, Unknown, Unknown Region. pp.177-188
Communication dans un congrès
hal-01759464
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Electrical characterization and modelling of high-performance SON DG MOSFETsESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, Unknown, Unknown Region. pp.373-376, ⟨10.1109/ESSDER.2004.1356567⟩
Communication dans un congrès
hal-01759468
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Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier Double-Gate MOSFET'sESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, Unknown, Unknown Region. pp.395-398, ⟨10.1109/ESSDERC.2003.1256897⟩
Communication dans un congrès
hal-01759526
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Highly Performant Double Gate MOSFET realized with SON process2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, Unknown, Unknown Region. pp.449-452
Communication dans un congrès
hal-01759525
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Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystalsSilicon Nano-electronics Workshop 2002, 2002, Honolulu, United States
Communication dans un congrès
hal-00484534
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