Jean-Luc Autran

234
Documents

Publications

Publications

Theoretical Model of Transient Current in CMOS Inverter Under IR Laser Pulse Responsible of Bitflip in FDSOI Technology

L. Pichon , L. Le Brizoual , H. Djeha , E. Ferrucho Alvarez , L. Claudepierre et al.
IEEE Transactions on Electron Devices, 2025, 72 (4), pp.1919-1925. ⟨10.1109/TED.2025.3538002⟩
Article dans une revue hal-04948356 v1
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Fast and Accurate Deep Learning-based Poisson Solver for Single Event Simulations

Sayah El Hajji , Gilles Gasiot , Jean-Luc Autran , Thomas Thery , Vincent Correas et al.
IEEE Transactions on Nuclear Science, 2025, ⟨10.1109/TNS.2025.3555324⟩
Article dans une revue hal-05004294 v1
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Single-Particle Radiation Sensitivity of Ultrawide-Bandgap Semiconductors to Terrestrial Atmospheric Neutrons

Daniela Munteanu , Jean-Luc Autran
Crystals, 2025, 15 (2), pp.186. ⟨10.3390/cryst15020186⟩
Article dans une revue hal-04952341 v1
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Real-time SER measurements of CMOS bulk 40 nm and 65 nm SRAMS combined with neutron spectrometry at the JET Tokamak during its final D-T plasma operation

Martin Dentan , Moindjie Soilihi , Matteo Cecchetto , Jean-Luc Autran , Rubén García Alía et al.
IEEE Transactions on Nuclear Science, 2025, 72 (4), pp.1486-1495. ⟨10.1109/TNS.2025.3540345⟩
Article dans une revue hal-04941391 v1
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Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

Jean-Luc Autran , Daniela Munteanu
Crystals, 2024, 14 (2), pp.128. ⟨10.3390/cryst14020128⟩
Article dans une revue hal-04420501 v1
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EUROfusion contributions to ITER nuclear operation

X. Litaudon , U. Fantz , R. Villari , V. Toigo , M.-H. Aumeunier et al.
Nuclear Fusion, 2024, 64 (11), pp.112006. ⟨10.1088/1741-4326/ad346e⟩
Article dans une revue hal-04687742 v1
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Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems

Jean-Luc Autran , Daniela Munteanu
IEEE Transactions on Nuclear Science, 2024, 71 (1), pp.31-66. ⟨10.1109/TNS.2023.3337288⟩
Article dans une revue hal-04333942 v1
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Interactions of Low-Energy Muons with Silicon: Numerical Simulation of Negative Muon Capture and Prospects for Soft Errors

Jean-Luc Autran , Daniela Munteanu
Journal of Nuclear Engineering, 2024, 5 (1), pp.91-110. ⟨10.3390/jne5010007⟩
Article dans une revue hal-04491638 v1
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Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST Tokamak

Soilihi Moindjie , Daniela Munteanu , Jean-Luc Autran , Martin Dentan , Philippe Moreau et al.
IEEE Transactions on Nuclear Science, 2024, 71 (8), pp.1496-1502. ⟨10.1109/TNS.2023.3347673⟩
Article dans une revue hal-04390851 v1
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Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation

Daniela Munteanu , Jean-Luc Autran
Electronics, 2023, 12 (21), pp.4468. ⟨10.3390/electronics12214468⟩
Article dans une revue hal-04265835 v1
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New insights into diffusion-collection modeling of radiation-induced charge in semiconductor devices

Jean-Luc Autran , Daniela Munteanu
Journal of Applied Physics, 2023, 134 (17), pp.175701. ⟨10.1063/5.0156698⟩
Article dans une revue hal-04241142 v1
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Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs

Soilihi Moindjie , Daniela Munteanu , Jean-Luc Autran , Victor Malherbe , Gilles Gasiot et al.
Microelectronics Reliability, 2023, pp.115181. ⟨10.1016/j.microrel.2023.115181⟩
Article dans une revue hal-04194288 v1
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Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits

Jean-Luc Autran , Daniela Munteanu
IEEE Transactions on Nuclear Science, 2023, 70 (5), pp.782-791. ⟨10.1109/TNS.2023.3263106⟩
Article dans une revue hal-04059844 v1
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Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons

Victor Malherbe , Francois Roy , Olivier Nier , Thomas Dalleau , Serge de Paoli et al.
IEEE Transactions on Nuclear Science, 2022, 69 (3), pp.534-541. ⟨10.1109/TNS.2022.3148925⟩
Article dans une revue hal-04138209 v1
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Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak during D-D Plasma Operation

Jean-Luc Autran , Soilihi Moindjie , Daniela Munteanu , Martin Dentan , Philippe Moreau et al.
IEEE Transactions on Nuclear Science, 2022, 69 (3), pp.1-1. ⟨10.1109/TNS.2022.3149160⟩
Article dans une revue hal-03575419 v1
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Electronics reliability assessment of future power fusion machines: neutron interaction analysis in bulk silicon

Jean-Luc Autran , Daniela Munteanu
Microelectronics Reliability, 2021, ⟨10.1016/j.microrel.2021.114223⟩
Article dans une revue hal-03358441 v1
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Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge

S. Guagliardo , Frédéric Wrobel , Ygor Quadros de Aguiar , Jean-Luc Autran , Paul Leroux et al.
Microelectronics Reliability, 2021, 119, ⟨10.1016/j.microrel.2021.114087⟩
Article dans une revue hal-03187849 v1
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Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons

Daniela Munteanu , Soilihi Moindjie , Jean-Luc Autran
Microelectronics Reliability, 2021, ⟨10.1016/j.microrel.2021.114256⟩
Article dans une revue hal-03358432 v1
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Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions

Y.Q. Aguiar , Frédéric Wrobel , Jean-Luc Autran , Paul Leroux , Frédéric Saigné et al.
Aerospace, 2020, 7 (2), pp.12. ⟨10.3390/aerospace7020012⟩
Article dans une revue hal-03129193 v1
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Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors

Jean-Luc Autran , Daniela Munteanu
IEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1428-1435. ⟨10.1109/TNS.2020.2971611⟩
Article dans une revue hal-02473107 v1

Impact of Complex-Logic Cell Layout on the Single-Event Transient Sensitivity

Y. Aguiar , Frédéric Wrobel , Jean-Luc Autran , P. Leroux , Frédéric Saigné et al.
IEEE Transactions on Nuclear Science, 2019, pp.1-1. ⟨10.1109/TNS.2019.2918077⟩
Article dans une revue hal-02136500 v1
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Terrestrial Neutron-Induced Single Events in GaN

Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2019, 100-101, pp.113357. ⟨10.1016/j.microrel.2019.06.049⟩
Article dans une revue hal-02263526 v1
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Modeling and Simulation of SEU in Bulk Si and Ge SRAM

Soilihi Moindjie , Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2019, 100-101, pp.113390. ⟨10.1016/j.microrel.2019.06.082⟩
Article dans une revue hal-02263527 v1
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A water tank muon spectrometer for the characterization of low energy atmospheric muons

Daniela Munteanu , Soilihi Moindjie , Jean-Luc Autran
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019, 933, pp.12-17. ⟨10.1016/j.nima.2019.03.061⟩
Article dans une revue hal-02087354 v1

A 225 μm2 Probe Single-Point Calibration Digital Temperature Sensor Using Body-Bias Adjustment in 28 nm FD-SOI CMOS

Martin Cochet , Ben Keller , Sylvain Clerc , Fady Abouzeid , Andreia Cathelin et al.
IEEE Solid-State Circuits Letters, 2018, 1 (1), pp.14-17. ⟨10.1109/LSSC.2018.2797427⟩
Article dans une revue hal-02111066 v1
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Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1-D Case Applied to 28-nm FD-SOI Devices

Victor Malherbe , Gilles Gasiot , Thomas Thery , Jean-Luc Autran , Philippe Roche
IEEE Transactions on Nuclear Science, 2018, 65 (1), pp.331-338. ⟨10.1109/TNS.2017.2774960⟩
Article dans une revue hal-02111080 v1
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Characterization of atmospheric muons at sea level using a cosmic ray telescope

Jean-Luc Autran , Daniela Munteanu , Tarek Saad Saoud , Soilihi Moindjie
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2018, 903, pp.77-84. ⟨10.1016/j.nima.2018.06.038⟩
Article dans une revue hal-01846825 v1
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Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

Y.Q. Aguiar , Frédéric Wrobel , Jean-Luc Autran , P. Leroux , F. Saigné et al.
Microelectronics Reliability, 2018, 88-90, pp.920-924. ⟨10.1016/j.microrel.2018.07.018⟩
Article dans une revue hal-02089778 v1

A 2.7 pJ/cycle 16 MHz, 0.7 microW Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI

Guénolé Lallement , Fady Abouzeid , Martin Cochet , Jean-Marc Daveau , Philippe Roche et al.
IEEE Journal of Solid-State Circuits, 2018, 53 (7), pp.2088-2100. ⟨10.1109/JSSC.2018.2821167⟩
Article dans une revue hal-02111060 v1
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On-Orbit Upset Rate Prediction at Advanced Technology Nodes: a 28 nm FD-SOI Case Study

Victor Malherbe , Gilles Gasiot , Dimitri Soussan , Jean-Luc Autran , Philippe Roche
IEEE Transactions on Nuclear Science, 2017, 64 (1, 1), pp.449-456. ⟨10.1109/TNS.2016.2634604⟩
Article dans une revue hal-01694468 v1
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Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation

Daniela Munteanu , Jean-Luc Autran , S. Moindjie
Microelectronics Reliability, 2017, 76 (SI), pp.719-724. ⟨10.1016/j.microrel.2017.07.040⟩
Article dans une revue hal-01693979 v1
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Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

Soilihi Moindjie , Jean-Luc Autran , Daniela Munteanu , Gilles Gasiot , Philippe Roche
Microelectronics Reliability, 2017, 76 (SI), pp.53-57. ⟨10.1016/j.microrel.2017.07.045⟩
Article dans une revue hal-01693984 v1

Real-time soft error rate measurements on bulk 40nm SRAM memories: a five-year dual-site experiment

Jean-Luc Autran , Daniela Munteanu , S. Moindjie , T. Saad Saoud , G. Gasiot et al.
Semiconductor Science and Technology, 2016, 31 (11), ⟨10.1088/0268-1242/31/11/114003⟩
Article dans une revue hal-01430070 v1

Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors

Zahi Essa , B. Pelletier , P. Morin , P. Boulenc , A. Pakfar et al.
Solid-State Electronics, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩
Article dans une revue istex hal-01435138 v1
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Natural radiation events in CCD imagers at ground level

T Saad Saoud , S Moindjie , Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2016, 64, pp.68 - 72. ⟨10.1016/j.microrel.2016.07.138⟩
Article dans une revue hal-01427855 v1
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SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation

Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2015, 55, pp.1501 - 1505. ⟨10.1016/j.microrel.2015.06.107⟩
Article dans une revue hal-01429427 v1

3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs

Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2015, 55 (9-10), pp.1522-1526. ⟨10.1016/j.microrel.2015.07.022⟩
Article dans une revue hal-01430073 v1

ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure

Jean-Luc Autran , Daniela Munteanu , S. Moindjie , T. Saad Saoud , S. Sauze et al.
Microelectronics Reliability, 2015, 55 (9-10), pp.1506-1511. ⟨10.1016/j.microrel.2015.06.101⟩
Article dans une revue hal-01430074 v1

Radiation and COTS at ground level

Jean-Luc Autran , Daniela Munteanu
Microelectronics Reliability, 2015, 55 (9-10), pp.2147-2153. ⟨10.1016/j.microrel.2015.06.030⟩
Article dans une revue hal-01430071 v1

Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation

P. Roche , G. Gasiot , Jean-Luc Autran , Daniela Munteanu , R. A. Reed et al.
IEEE Transactions on Nuclear Science, 2014, 61 (3, 2), pp.1498-1500. ⟨10.1109/TNS.2014.2318778⟩
Article dans une revue hal-01430075 v1

Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits

Jean-Luc Autran , M. Glorieux , Daniela Munteanu , S. Clerc , G. Gasiot et al.
Microelectronics Reliability, 2014, 54 (9-10, SI), pp.2278-2283. ⟨10.1016/j.microrel.2014.07.088⟩
Article dans une revue hal-01430080 v1

Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits

M. Glorieux , Jean-Luc Autran , Daniela Munteanu , S. Clerc , G. Gasiot et al.
IEEE Transactions on Nuclear Science, 2014, 61 (6, 1), pp.3527-3534. ⟨10.1109/TNS.2014.2362073⟩
Article dans une revue hal-01430079 v1

Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

Daniela Munteanu , Jean-Luc Autran
Microelectronics Reliability, 2014, 54 (9-10, SI), pp.2284-2288. ⟨10.1016/j.microrel.2014.07.079⟩
Article dans une revue hal-01430078 v1
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90 nm SRAM Static and Dynamic Mode Real-Time Testing at Concordia Station in Antarctica

Georgios Tsiligiannis , Luigi Dilillo , Alberto Bosio , Patrick Girard , Serge Pravossoudovitch et al.
IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.3389-3394. ⟨10.1109/TNS.2014.2363120⟩
Article dans une revue hal-04056468 v1

Behavioral modeling of SRIM tables for numerical simulation

S. Martinie , T. Saad-Saoud , S. Moindjie , Daniela Munteanu , Jean-Luc Autran
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 322, pp.2-6. ⟨10.1016/j.nimb.2013.12.023⟩
Article dans une revue hal-01430076 v1

Real-time soft-error rate measurements: A review

Jean-Luc Autran , Daniela Munteanu , P. Roche , G. Gasiot
Microelectronics Reliability, 2014, 54 (8), pp.1455-1476. ⟨10.1016/j.microrel.2014.02.031⟩
Article dans une revue hal-01430077 v1

An Analytical Model to Quantify Decay Chain Disequilibrium–Application to the Thorium Decay Chain

A. Kaouache , Frédéric Wrobel , F. Saigné , Antoine Touboul , R. D. Schrimpf et al.
IEEE Transactions on Nuclear Science, 2014, 61 (3), pp.1414 - 1419. ⟨10.1109/TNS.2014.2318074⟩
Article dans une revue hal-01635042 v1
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Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation

Tarek Saad Saoud , Soilihi Moindjie , Jean-Luc Autran , Daniela Munteanu , Frédéric Wrobel et al.
IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.3380-3388. ⟨10.1109/TNS.2014.2365038⟩
Article dans une revue lirmm-01234455 v1

A Silicon Diode-Based Detector for Investigations of Atmospheric Radiation

Frédéric Wrobel , Jean-Roch Vaillé , Denis Pantel , Luigi Dilillo , Jean-Marc J.-M. Galliere et al.
IEEE Transactions on Nuclear Science, 2013, 60 (5), pp.3603-3608. ⟨10.1109/TNS.2013.2264957⟩
Article dans une revue lirmm-01234419 v1

Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling

Frédéric Wrobel , Jean-Roch Vaillé , Denis Pantel , Luigi Dilillo , Jean-Marc J.-M. Galliere et al.
IEEE Transactions on Nuclear Science, 2013, 60 (4), pp.2386-2391. ⟨10.1109/TNS.2013.2257847⟩
Article dans une revue lirmm-01234425 v1

Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment

J. Dura , F. Triozon , S. Barraud , Daniela Munteanu , S. Martinie et al.
Journal of Applied Physics, 2012, 111 (10), ⟨10.1063/1.4719081⟩
Article dans une revue hal-01430085 v1

Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

Jean-Luc Autran , S. Serre , S. Semikh , Daniela Munteanu , G. Gasiot et al.
IEEE Transactions on Nuclear Science, 2012, 59 (6, 1), pp.2658-2665. ⟨10.1109/TNS.2012.2222438⟩
Article dans une revue hal-01430089 v1

Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

Daniela Munteanu , Jean-Luc Autran
IEEE Transactions on Nuclear Science, 2012, 59 (6, 2), pp.3249-3257. ⟨10.1109/TNS.2012.2221740⟩
Article dans une revue hal-01430090 v1

Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

S. Serre , S. Semikh , S. Uznanski , Jean-Luc Autran , Daniela Munteanu et al.
IEEE Transactions on Nuclear Science, 2012, 59 (4, 1), pp.714-722. ⟨10.1109/TNS.2012.2189018⟩
Article dans une revue hal-01430091 v1

3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation

Daniela Munteanu , Jean-Luc Autran
IEEE Transactions on Nuclear Science, 2012, 59 (4, 1), pp.773-780. ⟨10.1109/TNS.2012.2184139⟩
Article dans une revue hal-01430092 v1

Embedded silicon detector to investigate the natural radiative environment

Denis Pantel , Jean-Roch Vaillé , Frédéric Wrobel , Luigi Dilillo , Jean-Marc J.-M. Galliere et al.
Journal of Instrumentation, 2012, 7 (5), pp.1-11. ⟨10.1088/1748-0221/7/05/P05007⟩
Article dans une revue lirmm-00805011 v1

Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM

Sébastien Martinie , Jean-Luc Autran , Sebastien Sauze , Daniela Munteanu , Slawosz Uznanski et al.
IEEE Transactions on Nuclear Science, 2012, 59 (4, 1), pp.1048-1053. ⟨10.1109/TNS.2012.2189246⟩
Article dans une revue hal-01430088 v1

The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation

S. Semikh , S. Serre , Jean-Luc Autran , Daniela Munteanu , S. Sauze et al.
IEEE Transactions on Nuclear Science, 2012, 59 (2), pp.303-313. ⟨10.1109/TNS.2011.2179945⟩
Article dans une revue hal-01430083 v1

Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal-Oxide-Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices

Sébastien Martinie , Daniela Munteanu , Gilles Le Carval , Julien Dura , Marie-Anne Jaud et al.
Japanese Journal of Applied Physics, 2011, 50 (1, 1), ⟨10.1143/JJAP.50.014103⟩
Article dans une revue hal-01430094 v1

Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM

S. Martinie , Jean-Luc Autran , S. Uznanski , P. Roche , G. Gasiot et al.
IEEE Transactions on Nuclear Science, 2011, 58 (3, 2), pp.1086-1092. ⟨10.1109/TNS.2010.2102363⟩
Article dans une revue hal-01430099 v1

Quantum Compact Model of Drain Current in Independent Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Daniela Munteanu , Jean-Luc Autran , Mathieu Moreau
Japanese Journal of Applied Physics, 2011, 50 (2), ⟨10.1143/JJAP.50.024301⟩
Article dans une revue hal-01430093 v1

Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level

Sébastien Martinie , Jean-Luc Autran , Daniela Munteanu , Frédéric Wrobel , Michael Gedion et al.
IEEE Transactions on Nuclear Science, 2011, 58 (6, 1), pp.2798-2803. ⟨10.1109/TNS.2011.2170851⟩
Article dans une revue hal-01430100 v1

Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel

Daniela Munteanu , Mathieu Moreau , Jean-Luc Autran
Journal of Non-Crystalline Solids, 2011, 357 (8-9, SI), pp.1879-1883. ⟨10.1016/j.jnoncrysol.2010.12.046⟩
Article dans une revue istex hal-01430098 v1

Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications

Daniela Munteanu , Jean-Luc Autran
Journal of Non-Crystalline Solids, 2011, 357 (8-9, SI), pp.1884-1887. ⟨10.1016/j.jnoncrysol.2010.11.112⟩
Article dans une revue istex hal-01430095 v1

Experimental Characterization of Atmospheric Radiation Environment with Stratospheric Balloon

Frédéric Wrobel , Jean-Roch Vaillé , Denis Pantel , Luigi Dilillo , Paolo Rech et al.
IEEE Transactions on Nuclear Science, 2011, 58 (3), pp.945-951. ⟨10.1109/TNS.2011.2136359⟩
Article dans une revue lirmm-00805045 v1

Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials

Mathieu Moreau , Daniela Munteanu , Jean-Luc Autran
Microelectronic Engineering, 2011, 88 (4), pp.366-369. ⟨10.1016/j.mee.2010.08.026⟩
Article dans une revue istex hal-01430097 v1

Endotherapia

M. Geffard , L. de Bisschop , S. Duleu , O. Pouns , G. Ferran et al.
Anti-inflammatory and anti-allergy agents in Medicinal Chemistry, 2010, 9 (3), pp.197-211
Article dans une revue hal-00584065 v1

Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

Jean-Luc Autran , Daniela Munteanu , P. Roche , G. Gasiot , S. Martinie et al.
Microelectronics Reliability, 2010, 50 (9-11), pp.1822-1831. ⟨10.1016/j.microrel.2010.07.033⟩
Article dans une revue istex hal-01430102 v1

Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology

Vincent Barral , Thierry Poiroux , Jérôme Saint-Martin , Daniela Munteanu , Jean-Luc Autran et al.
IEEE Transactions on Electron Devices, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩
Article dans une revue hal-01430106 v1

Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics

X. Loussier , Daniela Munteanu , Jean-Luc Autran
Journal of Non-Crystalline Solids, 2009, 355 (18-21), pp.1185-1188. ⟨10.1016/j.jnoncrysol.2009.02.011⟩
Article dans une revue istex hal-01430115 v1

Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices

Mathieu Moreau , Daniela Munteanu , Jean-Luc Autran , F. Bellenger , J. Mitard et al.
Journal of Non-Crystalline Solids, 2009, 355 (18-21), pp.1171-1175. ⟨10.1016/j.jnoncrysol.2009.01.056⟩
Article dans une revue istex hal-01430114 v1

Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation

Sébastien Martinie , Daniela Munteanu , Gilles Le Carval , Jean-Luc Autran
IEEE Transactions on Electron Devices, 2009, 56 (11, SI), pp.2692-2702. ⟨10.1109/TED.2009.2030540⟩
Article dans une revue hal-01430108 v1

Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices

Vincent Barral , Thierry Poiroux , Sylvain Barraud , François Andrieu , Olivier Faynot et al.
IEEE Transactions on Nanotechnology, 2009, 8 (2), pp.167-173. ⟨10.1109/TNANO.2008.2010128⟩
Article dans une revue hal-01430103 v1

Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) study

Daniela Munteanu , Jean-Luc Autran , Mathieu Moreau , M. Houssa
Journal of Non-Crystalline Solids, 2009, 355 (18-21), pp.1180-1184. ⟨10.1016/j.jnoncrysol.2009.03.006⟩
Article dans une revue istex hal-01430113 v1
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Analytical modelling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects

Sebastien Martinie , Daniela Munteanu , Gilles Le Carval , Jean-Luc Autran
Molecular Simulation, 2009, 35 (08), pp.631-637. ⟨10.1080/08927020902769836⟩
Article dans une revue hal-00515076 v1

Experimental Investigation on the Quasi-Ballistic Transport: Part II-Backscattering Coefficient Extraction and Link With the Mobility

Vincent Barral , Thierry Poiroux , Daniela Munteanu , Jean-Luc Autran , Simon Deleonibus
IEEE Transactions on Electron Devices, 2009, 56 (3), pp.420-430. ⟨10.1109/TED.2008.2011682⟩
Article dans une revue hal-01430104 v1

3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates

Daniela Munteanu , Jean-Luc Autran
IEEE Transactions on Nuclear Science, 2009, 56 (4, 2), pp.2083-2090. ⟨10.1109/TNS.2009.2016343⟩
Article dans une revue hal-01430111 v1
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A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs

Daniela Munteanu , Mathieu Moreau , Jean-Luc Autran
Molecular Simulation, 2009, 35 (06), pp.491-497. ⟨10.1080/08927020902801548⟩
Article dans une revue hal-00515080 v1
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Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices

Mathieu Moreau , Daniela Munteanu , Jean-Luc Autran , Florence Bellenger , Jérome Mitard et al.
MRS Online Proceedings Library, 2009, 1194, pp.1194-A02-02. ⟨10.1557/PROC-1194-A02-02⟩
Article dans une revue hal-01745840 v1

Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study

Daniela Munteanu , Jean-Luc Autran
IEEE Transactions on Nuclear Science, 2009, 56 (4, 2), pp.2042-2049. ⟨10.1109/TNS.2009.2016564⟩
Article dans une revue hal-01430109 v1

Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

Jean-Luc Autran , P. Roche , S. Sauze , G. Gasiot , Daniela Munteanu et al.
IEEE Transactions on Nuclear Science, 2009, 56 (4, 2), pp.2258-2266. ⟨10.1109/TNS.2009.2012426⟩
Article dans une revue hal-01430112 v1

Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-kappa Dielectric Stack Using the Non-equilibrium Green's Function Formalism

Mathieu Moreau , Daniela Munteanu , Jean-Luc Autran
Japanese Journal of Applied Physics, 2009, 48 (11), ⟨10.1143/JJAP.48.111409⟩
Article dans une revue hal-01430110 v1

Impact of Geometrical and Electrical Parameters on Speed Performance Characteristics in Ultimate Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Xavier Loussier , Daniela Munteanu , Jean-Luc Autran , Olivier Tintori
Japanese Journal of Applied Physics, 2008, 47 (5, 1), pp.3390-3395. ⟨10.1143/JJAP.47.3390⟩
Article dans une revue hal-01759434 v1

Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

Daniela Munteanu , Jean-Luc Autran
IEEE Transactions on Nuclear Science, 2008, 55 (4, 1), pp.1854-1878. ⟨10.1109/TNS.2008.2000957⟩
Article dans une revue hal-01759437 v1

Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach

Jean-Luc Autran , Daniela Munteanu
Journal of computational and theoretical nanoscience, 2008, 5 (6), pp.1120-1127
Article dans une revue hal-01759436 v1

Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits

Sebastien Martinie , Gilles Le Carval , Daniela Munteanu , S. Soliveres , Jean-Luc Autran
IEEE Transactions on Electron Devices, 2008, 55 (9), pp.2443-2453. ⟨10.1109/TED.2008.927656⟩
Article dans une revue hal-01759435 v1

New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport

Sebastien Martinie , Daniela Munteanu , Gilles Le Carval , Jean-Luc Autran
IEEE Electron Device Letters, 2008, 29 (12), pp.1392-1394. ⟨10.1109/LED.2008.2007305⟩
Article dans une revue hal-01759431 v1
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Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Mathieu Moreau , Daniela Munteanu , Jean-Luc Autran
Japanese Journal of Applied Physics, 2008, 47 (9), pp.7013 - 7018. ⟨10.1143/JJAP.47.7013⟩
Article dans une revue hal-01745615 v1

Altitude SEE test European platform (ASTEP) and first results in CMOS 130 nm SRAM

Jean-Luc Autran , Philippe Roche , Joseph Borel , Christophe Sudre , Karine Castellani-Coulie et al.
IEEE Transactions on Nuclear Science, 2007, 54 (4, 2), pp.1002-1009. ⟨10.1109/TNS.2007.891398⟩
Article dans une revue hal-01759445 v1

Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors

Vincent Barral , T. Poiroux , M. Vinet , J. Widiez , B. Previtali et al.
Solid-State Electronics, 2007, 51 (4), pp.537-542. ⟨10.1016/j.sse.2007.02.016⟩
Article dans une revue istex hal-01759440 v1

3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs

Daniela Munteanu , Jean-Luc Autran , V. Ferlet-Cavrois , P. Paillet , J. Baggio et al.
IEEE Transactions on Nuclear Science, 2007, 54 (4, 2), pp.994-1001. ⟨10.1109/TNS.2007.892284⟩
Article dans une revue hal-01759444 v1

Full-band study of current across silicon nanowire transistors

K. Nehari , N. Cavassilas , Fabienne Michelini , M. Bescond , Jean-Luc Autran et al.
Applied Physics Letters, 2007, 90 (13), pp.132112:1-3. ⟨10.1063/1.2716351⟩
Article dans une revue hal-00392816 v1

Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits

X. Loussier , Daniela Munteanu , Jean-Luc Autran
Journal of Non-Crystalline Solids, 2007, 353 (5-7), pp.639-644. ⟨10.1016/j.jnoncrysol.2006.11.016⟩
Article dans une revue istex hal-01759443 v1
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Compact Modeling of Symmetrical Double-Gate MOSFETs Including Carrier Confinement and Short-Channel Effects

Daniela Munteanu , Jean-Luc Autran , Xavier Loussier , Samuel Harrison , Robin Cerutti
Molecular Simulation, 2007, 33 (07), pp.605-611. ⟨10.1080/08927020600930524⟩
Article dans une revue hal-00526208 v1

Investigation of quantum effects in ultra-thin body single- and double-gate devices submitted to heavy ion irradiation

Daniela Munteanu , V. Ferlet-Cavrois , Jean-Luc Autran , P. Paillet , J. Baggio et al.
IEEE Transactions on Nuclear Science, 2006, 53 (6, 1), pp.3363-3371. ⟨10.1109/TNS.2006.886206⟩
Article dans une revue hal-01759448 v1

Quantum short-channel compact modelling of drain-current in double-gate MOSFET

Daniela Munteanu , Jean-Luc Autran , Xavier Loussier , Samuel Harrison , Robin Cerutti et al.
Solid-State Electronics, 2006, 50 (4), pp.680-686. ⟨10.1016/j.sse.2006.03.038⟩
Article dans une revue istex hal-01759446 v1

Investigation of 30 nm gate-all-around MOSFET sensitivity to heavy ions: A 3-D simulation study

K. Castellani-Coulie , Daniela Munteanu , Jean-Luc Autran , V. Ferlet-Cavrois , P. Paillet et al.
IEEE Transactions on Nuclear Science, 2006, 53 (4, 1), pp.1950-1958. ⟨10.1109/TNS.2006.880945⟩
Article dans une revue hal-01759447 v1

Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation

K. Castellani-Couli , Daniela Munteanu , Jean-Luc Autran , Veronique Ferlet-Cavrois , P. Paillet et al.
IEEE Transactions on Nuclear Science, 2006, 53 (6), pp.3265-3270
Article dans une revue hal-02025180 v1

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

K. Nehari , N. Cavassilas , Jean-Luc Autran , M. Bescond , Daniela Munteanu et al.
Solid-State Electronics, 2006, 50 (4), pp.716-721. ⟨10.1016/j.sse.2006.03.041⟩
Article dans une revue istex hal-02132134 v1

Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs

Kc Castellani-Coulie , Daniela Munteanu , Jean-Luc Autran , V Ferlet-Cavrols , P Paillet et al.
IEEE Transactions on Nuclear Science, 2005, 52 (6, 1), pp.2137-2143. ⟨10.1109/TNS.2005.860680⟩
Article dans une revue hal-01759456 v1

Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

Daniela Munteanu , Jean-Luc Autran , S Harrison , K Nehari , O Tintori et al.
Molecular Simulation, 2005, 31 (12), pp.831-837. ⟨10.1080/08927020500313995⟩
Article dans une revue hal-01759460 v1

Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-kappa dielectrics

Jean-Luc Autran , Daniela Munteanu , M Houssa , K Castellani-Coulie , A Said
Japanese Journal of Applied Physics, 2005, 44 (12), pp.8362-8366. ⟨10.1143/JJAP.44.8362⟩
Article dans une revue hal-01759458 v1

Improvement of current-control induced by oxide notch in very short field-effect transistor

Jean-Luc Autran
Applied Physics Letters, 2005, Vol.87, pp.073509
Article dans une revue hal-00145185 v1

SiO2, advanced dielectrics and related devices 5 - Proceedings of the 5th Franco-Italian Symposium on SiO2, Advanced Dielectrics and Related Devices - Preface

A Vedda , Daniela Munteanu , M Ferrari , P Paillet , Jean-Luc Autran
Journal of Non-Crystalline Solids, 2005, 351 (21-23), pp.VII. ⟨10.1016/j.jnocrysol.2005.04.067⟩
Article dans une revue hal-01759452 v1

Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations

K Castellani-Coulie , Daniela Munteanu , V Ferlet-Cavrois , Jean-Luc Autran
IEEE Transactions on Nuclear Science, 2005, 52 (5, 2), pp.1474-1479. ⟨10.1109/TNS.2005.855810⟩
Article dans une revue hal-01759457 v1
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Improvement of current-control induced by oxide crenel in very short field-effect-transistor

Nicolas Cavassilas , Marc Bescond , Jean-Luc Autran
Applied Physics Letters, 2005, 87, pp.073509
Article dans une revue hal-00004546 v1
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Compact Modeling of the Threshold Voltage in Silicon Nanowire MOSFET including 2D-Quantum Confinement Effects

Jean-Luc Autran , Karim Nehari , Daniela Munteanu
Molecular Simulation, 2005, 31 (12), pp.839-843. ⟨10.1080/08927020500314027⟩
Article dans une revue hal-00514965 v1

Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs

Jean-Luc Autran
International Electron Device Meeting (IEDM) Tech. Digest, 2005, XX, pp.533
Article dans une revue hal-00146169 v1

A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-kappa gate dielectrics

Jean-Luc Autran , Daniela Munteanu , M Bescond , M Houssa , A Said
Journal of Non-Crystalline Solids, 2005, 351 (21-23), pp.1897-1901. ⟨10.1016/j.jnoncrysol.2005.04.034⟩
Article dans une revue istex hal-01759455 v1

An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors

Jean-Luc Autran , Daniela Munteanu , O Tintori , E Decarre , Am Ionescu
Molecular Simulation, 2005, 31 (2-3), pp.179-183. ⟨10.1080/0892702051233132⟩
Article dans une revue hal-01759451 v1

Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-permittivitty gate dielectrics

Daniela Munteanu , Jean-Luc Autran , S Harrison
Journal of Non-Crystalline Solids, 2005, 351 (21-23), pp.1911-1918. ⟨10.1016/j.jnoncrysol.2005.04.037⟩
Article dans une revue istex hal-01759450 v1

Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism

M Bescond , Jean-Luc Autran , Daniela Munteanu , M Lannoo
Solid-State Electronics, 2004, 48 (4), pp.567-574. ⟨10.1016/j.sse.2003.09.025⟩
Article dans une revue istex hal-01759467 v1

Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green's Function Formalism

Marc Bescond , Jean-Luc Autran , Nicolas Cavassilas , Daniela Munteanu , Michel Lannoo
Journal of Computational Electronics, 2004, 3 (3-4), pp.393-396. ⟨10.1007/s10825-004-7083-4⟩
Article dans une revue istex hal-01759465 v1

SiO2 and Advanced Dielectrics 4 - Proceedings of the 4th Franco-Italian Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, September 16-18, 2002 - Preface

A Vedda , Jean-Luc Autran , M Ferrari , Daniela Munteanu , M Passacantando
Journal of Non-Crystalline Solids, 2003, 322 (1-3), pp.VII. ⟨10.1016/S0022-3093(03)00346-6⟩
Article dans une revue istex hal-01759472 v1

Tunneling component of the ballistic current in ultimate double-gate devices

Jean-Luc Autran , Daniela Munteanu
Electrochemical and Solid-State Letters, 2003, 6 (7), pp.G95-G97. ⟨10.1149/1.1575591⟩
Article dans une revue hal-01759471 v1

Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides

Daniela Munteanu , Jean-Luc Autran , E Decarre , R Dinescu
Journal of Non-Crystalline Solids, 2003, 322 (1-3), pp.206-212. ⟨10.1016/S0022-3093(03)00203-5⟩
Article dans une revue istex hal-01759475 v1

Stretch-out of high-permittivity MOS capacitance-voltage curves resulting from a lateral non-uniform oxide charge distribution

Jean-Luc Autran , Daniela Munteanu , R Dinescu , M Houssa
Journal of Non-Crystalline Solids, 2003, 322 (1-3), pp.219-224. ⟨10.1016/S0022-3093(03)00205-9⟩
Article dans une revue istex hal-01759476 v1

Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices

Daniela Munteanu , Jean-Luc Autran
Solid-State Electronics, 2003, 47 (7), pp.1219-1225. ⟨10.1016/S0038-1101(03)00039-X⟩
Article dans une revue istex hal-01759470 v1

DYNAMOS: a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects

P Masson , Jean-Luc Autran , Daniela Munteanu
Solid-State Electronics, 2002, 46 (7), pp.1051-1059. ⟨10.1016/S0038-1101(02)00041-2⟩
Article dans une revue istex hal-01759527 v1

Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx

N. Pic , A. Glachant , S. Nitsche , J.Y. Hoarau , D. Goguenheim et al.
Journal of Non-Crystalline Solids, 2001, 280, pp.69-77
Article dans une revue hal-00152161 v1
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Radiation Effects in Thin-Film Ferroelectric PZT for Non-Volatile Memory Applications in Microelectronics

Jean-Luc Leray , Olivier Musseau , Philippe Paillet , Jean-Luc Autran , Frédéric Sodi et al.
Journal de Physique III, 1997, 7 (6), pp.1227-1243. ⟨10.1051/jp3:1997185⟩
Article dans une revue istex jpa-00249644 v1
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An Overview of Buried Oxides on Silicon: New Processes and Radiation Effects

Jean-Luc Leray , Philippe Paillet , Jean-Luc Autran
Journal de Physique III, 1996, 6 (12), pp.1625-1646. ⟨10.1051/jp3:1996205⟩
Article dans une revue istex jpa-00249548 v1

Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using TaF5 source

R.A.B. Devine , Laurent Vallier , Jean-Luc Autran , P. Paillet , J.L. Leray
Applied Physics Letters, 1996, 68 ((13),), pp.1775
Article dans une revue hal-00284566 v1
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Etude par pompage de, charge des défauts induits à l'interface Si-SiO2 par rayonnements ionisants

Jean-Luc Autran , Bernard Balland , Jean-Pierre Vallard , Daniel Babot
Journal de Physique III, 1994, 4 (9), pp.1707-1721. ⟨10.1051/jp3:1994235⟩
Article dans une revue istex jpa-00249219 v1
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Instabilités dans les structures MOS 6H-SiC

Christophe Raynaud , Jean-Luc Autran , Frédéric Seigneur , Claude Jaussaud , Thierry Billon et al.
Journal de Physique III, 1994, 4 (5), pp.937-952. ⟨10.1051/jp3:1994176⟩
Article dans une revue istex jpa-00249157 v1
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Caractérisation des états d'interface dans des transistors MOS submicroniques par différentes techniques de pompage de charge

Jean-Luc Autran , Frédéric Seigneur , Jacques Delmas , Carole Plossu , Bernard Balland
Journal de Physique III, 1993, 3 (10), pp.1947-1961. ⟨10.1051/jp3:1993252⟩
Article dans une revue istex jpa-00249057 v1
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Modeling of Diffusion-Collection Mechanisms in Semiconductor Devices Submitted to Ionizing Radiation

Daniela Munteanu , Jean-Luc Autran
Advances in Semiconductor Physics, Devices and Quantum Dots - Nanotechnology and Future Challenges, IntechOpen, 2025, 978-0-85466-511-2. ⟨10.5772/intechopen.1003991⟩
Chapitre d'ouvrage hal-04400965 v1
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Radiation Response of Group-IV and III-V Semiconductors Subjected to D-D and D-T Fusion Neutrons

Jean-Luc Autran , Daniela Munteanu
New Advances in Semiconductors, IntechOpen, 2022, ⟨10.5772/intechopen.103047⟩
Chapitre d'ouvrage hal-03695354 v1
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Interactions between Terrestrial Cosmic-Ray Neutrons and III-V Compound Semiconductors

Daniela Munteanu , Jean-Luc Autran
Modeling and Simulation in Engineering, 2020, 978-953-51-0012-6. ⟨10.5772/intechopen.92774⟩
Chapitre d'ouvrage hal-02998364 v1
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Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

Daniela Munteanu , Jean-Luc Autran
Numerical Simulations in Engineering and Science, InTech, 2018, ⟨10.5772/intechopen.71528⟩
Chapitre d'ouvrage hal-02096696 v1

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Jean-Luc Autran , Daniela Munteanu , Soilihi Moindjie , Tarek Saad Saoud , Malherbe Victor et al.
N. Sher Akbar, O. Anwar Beg. Modeling and Simulation in Engineering Sciences, INTECH, pp.115-137 2016, 978-953-51-2609-6. ⟨10.5772/64277⟩
Chapitre d'ouvrage hal-01433126 v1

Soft Errors in digital circuits subjected to natural radiation: characterization, modeling and simulation issues

Daniela Munteanu , Jean-Luc Autran
K. Weide-Zaage, M. Chrzanowska-Jeske. Semiconductor Devices in Harsh Conditions, CRC Press, pp.21-42, 2016, 9781498743808
Chapitre d'ouvrage hal-01433114 v1

Natural Radiation Effects in CCD devices

Tarek Saad Saoud , Soilihi Moindjie , Daniela Munteanu , Jean-Luc Autran
M. Bagatin, S. Girardin. Ionizing Radiation Effects in Electronics: From Memories to Imagers, Taylor & Francis/CRC Press, 2015, 9781498722605
Chapitre d'ouvrage hal-02107684 v1

Computational Modeling and Monte Carlo Simulation of Soft Errors in Flash Memories

Jean-Luc Autran , Daniela Munteanu , Philippe Roche , Gilles Gasiot
J. Awrejcewicz. Computational and Numerical Simulations, INTECH, pp.367-392, 2014, 978-953-51-1220-4. ⟨10.5772/57220⟩
Chapitre d'ouvrage hal-02119483 v1

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

Daniela Munteanu , Jean-Luc Autran
J. Awrejcewicz. Computational and Numerical Simulations, INTECH, 2014, ⟨10.5772/57048⟩
Chapitre d'ouvrage hal-02119405 v1

Soft-Error Rate of Advanced SRAM Memories: Modeling and Monte Carlo Simulation

Jean-Luc Autran , Sergey Semikh , Daniela Munteanu , Sebastien Serre , Gilles Gasiot et al.
M. Andriychuk. Numerical Simulations, INTECH, pp.309-336, 2012, 979-953-307-821-1. ⟨10.5772/50111⟩
Chapitre d'ouvrage hal-02120900 v1

Nanowires: Promising Candidates for Electrostatic Control in Future Nanoelectronic Devices

Julien Dura , Sebastien Martinie , Daniela Munteanu , Francois Triozon , Sylvain Barraud et al.
H. Canbolat. Electrostatics, INTECH, pp.113-136, 2012, 978-953-51-0239-7. ⟨10.5772/36692⟩
Chapitre d'ouvrage hal-02121184 v1

A 2-D/3-D Schrödinger-Poisson Drift-Diffusion Numerical Simulation of Radially-Symmetric Nanowire MOSFETs

Daniela Munteanu , Jean-Luc Autran
X. Peng. Nanowires - Recent Advances, INTECH, pp.341-370, 2012, 978-953-51-0898-6. ⟨10.5772/52587⟩
Chapitre d'ouvrage hal-02120891 v1

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

Daniela Munteanu , Jean-Luc Autran
L. Angermann. Numerical Simulations, Applications, Examples and Theory, INTECH, pp.67-88, 2011, 978-953-307-440-5. ⟨10.5772/13231⟩
Chapitre d'ouvrage hal-02121229 v1

Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

Daniela Munteanu , Jean-Luc Autran , Sebastien Martinie
A. Hashim. Nanowires - Implementations and Applications, INTECH, pp.201-222, 2011, 978-953-307-563-1. ⟨10.5772/16827⟩
Chapitre d'ouvrage hal-02121221 v1

Real-Time Soft-Error Rate Characterization of Advanced SRAMs

Jean-Luc Autran , Daniela Munteanu , Sebastien Sauze , Philippe Roche , Gilles Gasiot
K. Iniewski. Radiation Effects in Semiconductors, CRC Press, pp.225-247, 2010, 978-1-4398-2694-2
Chapitre d'ouvrage hal-02121292 v1

A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performances

Sebastien Martinie , Daniela Munteanu , Gilles Le Carval , Jean-Luc Autran
A. Amara, T. Ea, M. Belleville. Emerging technologies and Circuits, Springer, pp.37-51, 2010, 978-90-481-9378-3
Chapitre d'ouvrage hal-02121249 v1

Nouveaux matériaux et architectures innovantes au-delà du transistor MOS sur silicium massif

Jean-Luc Autran , Daniela Munteanu
J.L. Leray, J.C. Boudenot, J. Gautier. La Micro-Nanoélectronique. Enjeux et Mutations, CNRS Editions, pp.129, 2009, 978-2-271-06829-3
Chapitre d'ouvrage hal-02121322 v1

Compact modeling of Independent Double-Gate MOSFET: a physical approach

Daniela Munteanu , Jean-Luc Autran
A. Amara and O. Rozeau. Planar Double-Gate transistor: from technology to circuit, Springer, pp.27-54, 2009, 978-1-4020-9327-2
Chapitre d'ouvrage hal-02121344 v1

Electrical characterization, modeling and simulation of high-κ based MOS devices

Jean-Luc Autran , Daniela Munteanu , Michel Houssa
M. Houssa. Fundamental and Technological Aspects of High-κ Gate Dielectrics, IOP Publishing, pp.251-289, 2004
Chapitre d'ouvrage hal-02121367 v1
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Maryla Falk, de Lemberg à Chamonix, une vie (1906-1980)

Marek Mejor , Jean-Luc Autran
Revue de la Maison Alexandra David Néel (ISBN 9 782958 329952), 2025, pp.56-69
Autre publication scientifique hal-05224597 v1
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Real-Time SER measurements of CMOS Bulk 40 nm and 65 nm SRAMs combined with neutron spectrometry at the JET Tokamak during D-D and D-T plasma operation

Martin Dentan , Soilihi Moindjie , Matteo Cecchetto , Jean-Luc Autran , Ruben Garcia Alia et al.
NSREC 2024 - 2024 IEEE Nuclear and Space Radiation Effects Conference, Jul 2024, Ottawa, Canada
Communication dans un congrès hal-04613462 v1
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Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs

Soilihi Moindje , Daniela Munteanu , Jean-Luc Autran , Victor Malherbe , Gilles Gasiot et al.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Oct 2023, Toulouse, France
Communication dans un congrès hal-04177735 v1
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Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST Tokamak

Soilihi Moindjie , Daniela Munteanu , Jean-Luc Autran , Martin Dentan , Philippe Moreau et al.
European Workshop on Radiation and its Effects on Components and Systems (RADECS 2023), Sep 2023, Toulouse, France
Communication dans un congrès hal-04139407 v1
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Preliminary Study of Electronics Reliability in ITER Neutron Environment

Martin Dentan , Gianluca Borgese , Jean-Luc Autran , Daniela Munteanu , Soilihi Moindjie et al.
European Workshop on Radiation and its Effects on Components and Systems (RADECS 2022), Oct 2022, Venise, Italy. ⟨10.1109/RADECS55911.2022.10412483⟩
Communication dans un congrès hal-03735989 v1
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Multi-scale, multi-physics modeling and simulation of single-event effects at device and circuit levels

Jean-Luc Autran , Daniela Munteanu
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2022), Jul 2022, Provo, United States
Communication dans un congrès hal-03796081 v1
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Reliability concerns of Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons

Daniela Munteanu , Jean-Luc Autran
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Oct 2021, Bordeaux, France
Communication dans un congrès hal-03358407 v1
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Real-Time Characterization of Neutron-induced SEUs in Fusion Experiment at WEST Tokamak during D-D Plasma Operation

Soilihi Moindjie , Daniela Munteanu , M. Dentan , P. Moreau , F. P. Pellissier et al.
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2021), Jul 2021, Ottawa, Canada
Communication dans un congrès hal-03359535 v1
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Electronics reliability of future power fusion machines: numerical investigations at silicon level

Jean-Luc Autran , Daniela Munteanu
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Oct 2021, Bordeaux, France
Communication dans un congrès hal-03358419 v1
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Effect of Temperature on Single Event Latchup Sensitivity

S. Guagliardo , Frédéric Wrobel , Ygor Quadros de Aguiar , Jean-Luc Autran , P. Leroux et al.
International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Apr 2020, Marrakech, Morocco. ⟨10.1109/dtis48698.2020.9081275⟩
Communication dans un congrès hal-03187841 v1
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Terrestrial Neutron-Induced Single Events in GaN

Daniela Munteanu , Jean-Luc Autran
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France
Communication dans un congrès hal-02263529 v1
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Modeling and Simulation of SEU in Bulk Si and Ge SRAM

Soilihi Moindjie , Daniela Munteanu , Jean-Luc Autran
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France
Communication dans un congrès hal-02263530 v1
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Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors

Jean-Luc Autran , Daniela Munteanu
European Workshop on Radiation and its Effects on Components and Systems (RADECS 2019), Sep 2019, Biarritz, France
Communication dans un congrès hal-02263545 v1
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Impact of Complex-Logic Cell Layout on the Single-Event Transient Sensitivity

Ygor Quadros de Aguiar , Frédéric Wrobel , Jean-Luc Autran , Paul Leroux , Frédéric Saigné et al.
IEEE RADECS2018, Sep 2018, Goteborg, Sweden
Communication dans un congrès hal-02086422 v1
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Effet des neutrons atmosphériques sur l'électronique SiC et GaN

Jean-Luc Autran , Daniela Munteanu
Journée du Groupement des Industries Françaises Aéronautiques et Spatiales, GIFAS 2018, Nov 2018, Paris, France
Communication dans un congrès hal-02100118 v1

Analysis of the charge sharing effect in the SET sensitivity of bulk 45nm standard cell layouts under heavy ions

Ygor Quadros de Aguiar , Frédéric Wrobel , Jean-Luc Autran , Paul Leroux , Frédéric Saigné et al.
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark
Communication dans un congrès hal-02086379 v1

Q-Learning-based Adaptive Power Management for IoT System-an-Chips with Embedded Power States

Y. Debizet , Guénolé Lallement , Fady Abouzeid , Philippe Roche , Jean-Luc Autran
IEEE International Symposium on Circuits and Systems (ISCAS), May 2018, Florence, Italy
Communication dans un congrès hal-02111130 v1
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Single Event Effects: the effects of Single particles on electronics. Space, aerospace and ground

Jean-Luc Autran , Daniela Munteanu
ANNIMA 2017, Jun 2017, Liège, Belgium
Communication dans un congrès hal-01788355 v1
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Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation

Daniela Munteanu , Jean-Luc Autran , Soilihi Moindjie
28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France
Communication dans un congrès hal-01787612 v1
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Accurate Resolution of Time-Dependent and Circuit-Coupled Charge Transport Equations: 1D Case Applied to 28 nm FD-SOI Devices

Victor Malherbe , Gilles Gasiot , Thomas Thery , Jean-Luc Autran , Philippe Roche
NSREC 2017, Jul 2017, New Orleans, United States
Communication dans un congrès hal-01788174 v1
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A 0.40 pJ/cycle 981 μm2 Voltage Scalable Digital Frequency Generator for SoC Clocking

Martin Cochet , Sylvain Clerc , Fady Abouzeid , Guénolé Lallement , Philippe Roche et al.
2017 IEEE Asian Solid-State Circuits Conference (A-SSCC 2017), Nov 2017, Seoul, South Korea
Communication dans un congrès hal-01788358 v1
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A 2.7pJ/cycle 16MHz SoC with 4.3nW Power-Off ARM Cortex-M0+ Core in 28nm FD-SOI

Guénolé Lallement , Fady Abouzeid , Martin Cochet , Jean-Marc Daveau , Philippe Roche et al.
ESSCIRC 2017, Sep 2017, Leuven, Belgium
Communication dans un congrès hal-01788172 v1
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Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs

Soilihi Moindjie , Jean-Luc Autran , Daniela Munteanu , Gilles Gasiot , Philippe Roche
28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France
Communication dans un congrès hal-01787603 v1
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Natural radiation events in CCD imager at ground level

T. Saad Saoud , S. Moindjie , Daniela Munteanu , Jean-Luc Autran
27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2016, Halle, Germany
Communication dans un congrès hal-01456909 v1

Investigating the Single-Event-Transient Sensitivity of 65 nm Clock Trees with Heavy Ion Irradiation and Monte-Carlo Simulation

Victor Malherbe , Gilles Gasiot , Sylvain Clerc , Fady Abouzeid , Jean-Luc Autran et al.
2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016, Unknown, Unknown Region
Communication dans un congrès hal-01435110 v1

A 28nm FD-SOI Standard Cell 0.6-1.2V Open-Loop Frequency Multiplier for Low Power SoC Clocking

Martin Cochet , Sylvain Clerc , Mehdi Naceur , Pierre Schamberger , Damien Croain et al.
2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2016, Unknown, Unknown Region. pp.1206-1209
Communication dans un congrès hal-01434957 v1

A Layout-Based Fault Injection Methodology for SER Prediction: Implementation and Correlation with 65nm Heavy Ion Experimental Results

Benjamin Coeffic , Victor Malherbe , Jean-Marc Daveau , Gilles Gasiot , Lirida Naviner et al.
Proceedings of IEEE Nuclear and Space Radiation Effects Conference (NSREC), Jul 2016, New Orleans, United States
Communication dans un congrès hal-02288532 v1
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Atmospheric radiation and COTS at ground level

Jean-Luc Autran , Daniela Munteanu
ESREF Conference, Oct 2015, Toulouse, France
Communication dans un congrès hal-02101398 v1
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3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFET

Daniela Munteanu , Jean-Luc Autran
ESREF Conference, Oct 2015, Toulouse, France
Communication dans un congrès hal-02100246 v1
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ASTEP (2005-2015): Ten Years of Soft Error and Atmospheric Radiation Characterizations on the Plateau de Bure

Jean-Luc Autran , Daniela Munteanu , Soilihi Moindjie , Tarek Saad Saoud , Sébastien Sauze et al.
ESREF Conference, Oct 2015, Toulouse, France
Communication dans un congrès hal-02101357 v1

Investigation of Alpha Emissivity as a Function of Time

Frédéric Wrobel , A. Kaouache , F. Saigné , Antoine Touboul , R. D. Schrimpf et al.
51th IEEE Nuclear Space and Radiation Effects Conference, 2015, Boston, United States
Communication dans un congrès hal-01824780 v1
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SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation

Daniela Munteanu , Jean-Luc Autran
ESREF Conference, Oct 2015, Toulouse, France
Communication dans un congrès hal-02100273 v1

Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased junctions Embedded in Circuits

Maximilien Glorieux , Jean-Luc Autran , Daniela Munteanu , Sylvain Clerc , Gilles Gasiot et al.
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Jul 2014, Paris, France
Communication dans un congrès hal-04373073 v1

Particle Monte Carlo Modeling of Single-Event Transient Current and Charge Collection in Integrated Circuits

Jean-Luc Autran , Maximilien Glorieux , Daniela Munteanu , Sylvain Clerc , Gilles Gasiot et al.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2014), Sep 2014, Berlin, Germany
Communication dans un congrès hal-04373126 v1

Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude Vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation

Tarek Saad Saoud , Soilihi Moindjie , Jean-Luc Autran , Daniela Munteanu , Frédéric Wrobel et al.
NSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France
Communication dans un congrès lirmm-01237717 v1

Radiation Sensitivity of Junctionless Double-Gate 6T SRAM Cells Investigated by 3-D Numerical Simulation

Daniela Munteanu , Jean-Luc Autran
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2014), Sep 2014, Berlin, Germany
Communication dans un congrès hal-04373115 v1

Real-Time Testing of 90nm COTS SRAMs at Concordia Station in Antarctica

Georgios Tsiligiannis , Luigi Dilillo , Alberto Bosio , Patrick Girard , Serge Pravossoudovitch et al.
NSREC: Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France
Communication dans un congrès lirmm-01237709 v1

Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm

Jean-Luc Autran , Daniela Munteanu , Sébastien Sauze , Gilles Gasiot , Philippe Roche
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Jul 2014, Paris, France
Communication dans un congrès hal-04373085 v1

Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue

Philippe Roche , Jean-Luc Autran , Gilles Gasiot , Daniela Munteanu
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013, Washington, United States. ⟨10.1109/IEDM.2013.6724728⟩
Communication dans un congrès hal-01430081 v1
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Understanding evolving risks of single event effects

Daniela Munteanu , Jean-Luc Autran
14th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2013), Sep 2013, Oxford, United Kingdom
Communication dans un congrès hal-04372514 v1

Soft Errors Induced by Natural Radiation at Ground Level in Floating Gate Flash Memories

G. Just , Jean-Luc Autran , S. Serre , Daniela Munteanu , S. Sauze et al.
2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013, Monterey, United States. ⟨10.1109/IRPS.2013.6531992⟩
Communication dans un congrès hal-01430082 v1

Proton Flux Anisotropy in the Atmosphere: Experiment and Modeling

Frédéric Wrobel , Jean-Roch Vaillé , Denis Pantel , Luigi Dilillo , Jean-Marc J.-M. Galliere et al.
RADECS: European Conference on Radiation and Its Effects on Components and Systems, Sep 2012, Biarritz, France. pp.1-4
Communication dans un congrès lirmm-00805150 v1

A Silicon Diode Based Detector for the Natural Radiative Environment Measurement in Altitude

Denis Pantel , Jean-Roch Vaillé , Frédéric Wrobel , Luigi Dilillo , Jean-Marc J.-M. Galliere et al.
IEEE (Nuclear Plasma Society) Real Time Conference, Jun 2012, Berkeley, CA, United States. pp.1-6, ⟨10.1109/RTC.2012.6418104⟩
Communication dans un congrès lirmm-00805169 v1

Electronic transport in GAA silicon nanowire MOSFETs: from Kubo-Greenwood mobility including screening remote coulomb scattering to analytical backscattering coefficient

J. Dura , F. Triozon , Daniela Munteanu , S. Barraud , S. Martinie et al.
2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012, Madison, WI, United States
Communication dans un congrès hal-01430084 v1
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Effects of Low Energy Muons on Electronics: Physical Insights and Geant4 Simulation

Sébastien Serre , Serguei Semikh , Jean-Luc Autran , Daniela Munteanu , Gilles Gasiot et al.
European Workshop on Radiation and its Effects on Components and Systems (RADECS 2012), Sep 2012, Biarritz (France), France
Communication dans un congrès hal-04376254 v1

Real-Time Soft-Error Testing of 40nm SRAMs

Jean-Luc Autran , S. Serre , Daniela Munteanu , S. Martinie , S. Semikh et al.
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241814⟩
Communication dans un congrès hal-01430086 v1

A Review of Real-Time Soft-Error Rate Measurements in Electronic Circuits

Jean-Luc Autran , Daniela Munteanu , S. Serre , S. Sauze
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012, Anaheim, CA, United States. ⟨10.1109/IRPS.2012.6241843⟩
Communication dans un congrès hal-01430087 v1

Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

Jean-Luc Autran , Sébastien Serre , Serguei Semikh , Daniela Munteanu , Gilles Gasiot et al.
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2012), Jul 2012, Miami (FL), United States
Communication dans un congrès hal-04376248 v1
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Energy bands calculation in nanostructured meta-materials for solar cell applications

Daniela Munteanu , Jean-Luc Autran
Photovoltaic Technical Conference – Thin Film & Advanced Solutions 2011 (PV-TC 2011), May 2011, Aix-en-Provence, France
Communication dans un congrès hal-04386570 v1

3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs under Heavy-Ion Irradiation

Daniela Munteanu , Jean-Luc Autran
12th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.73-76, ⟨10.1109/RADECS.2011.6131370⟩
Communication dans un congrès hal-04386582 v1

Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM

Sébastien Martinie , Jean-Luc Autran , Sébastien Sauze , Daniela Munteanu , Slawosz Uznanski et al.
12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.524-527, ⟨10.1109/RADECS.2011.6131359⟩
Communication dans un congrès hal-04390971 v1

GEANT4 analysis of n-Si nuclear reactions from different sources of neutrons and its implication on soft-error rate

Sébastien Serre , Serguei Semikh , Slawosz Uznanski , Jean-Luc Autran , Daniela Munteanu et al.
12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.11-14, ⟨10.1109/RADECS.2011.6131292⟩
Communication dans un congrès hal-04391012 v1

Modeling of energy bands in quantum dot superlattices for solar cell applications

Daniela Munteanu , Jean-Luc Autran
8th Symposium SiO2, Advanced Dielectrics and Related Devices (2010), Jun 2010, Varenna, Italy
Communication dans un congrès hal-04393615 v1

Effects of gate stack parasitic charge on current-voltage characteristics of high-k/SiO2/Ge-channel Double-Gate MOSFETs

Daniela Munteanu , Mathieu Moreau , Jean-Luc Autran
8th Symposium SiO2, Advanced Dielectrics and Related Devices (2010), Jun 2010, Varenna, Italy
Communication dans un congrès hal-04393620 v1

Alpha-Particle Induced Soft-Error Rate in CMOS 130nm SRAM

Sebastien Martinie , Jean-Luc Autran , Slawosz Uznanski , Philippe Roche , Gilles Gasiot et al.
11th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2010), Sep 2010, Längenfeld, Austria
Communication dans un congrès hal-04393659 v1

A GPU/CUDA Implementation of the Collection-Diffusion Model to Compute SER of Large Area and Complex Circuits

Jean-Luc Autran , Slawosz Uznanski , Sebastien Martinie , Philippe Roche , Gilles Gasiot et al.
International Conference on Integrated Circuit Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.67-70, ⟨10.1109/ICICDT.2010.5510293⟩
Communication dans un congrès hal-04393640 v1

Alpha-emitter induced soft-errors in CMOS 130nm SRAM: Real-time underground experiment and Monte-Carlo simulation

Sébastien Martinie , Slawosz Uznanski , Jean-Luc Autran , Philippe Roche , Gilles Gasiot et al.
International Conference on Integrated Circuit Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.220-223, ⟨10.1109/ICICDT.2010.5510250⟩
Communication dans un congrès hal-04393654 v1

Simulation study of short-channel effects and quantum confinement in Double-Gate FinFET devices with high-mobility materials

Mathieu Moreau , Daniela Munteanu , Jean-Luc Autran
European-Material Research Society (E-MRS) 2010 Spring Meeting, Jun 2010, Strasbourg, France
Communication dans un congrès hal-04393626 v1

Compact Modeling of Quasi-Ballistic Transport and Quantum Mechanical Confinement in Nanowire MOSFETs: Circuit Performances Analysis

S. Martinie , E. Sarrazin , Daniela Munteanu , S. Barraud , G. Le Carval et al.
2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2009, Sain-Diego,CA, United States. pp.139-142, ⟨10.1109/SISPAD.2009.5290229⟩
Communication dans un congrès hal-01430107 v1

Combined Altitude and Underground Real-Time SER Characterization of CMOS Technologies on the ASTEP-LSM Platform

Jean-Luc Autran , P. Roche , S. Sauze , G. Gasiot , Daniela Munteanu et al.
2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2009, Austin, TX, United States. pp.113-120, ⟨10.1109/ICICDT.2009.5166277⟩
Communication dans un congrès hal-01430105 v1

Electron Mean-Free-Path Experimental Extraction on Ultra-Thin and Ultra-Short Strained and Unstrained FDSOI n-MOSFETs

Vincent Barral , T. Poiroux , S. Barraud , O. Bonno , F. Andrieu et al.
2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, Unknown, Unknown Region. pp.7-8, ⟨10.1109/SNW.2008.5418445⟩
Communication dans un congrès hal-01759427 v1

A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate Architecture

S. Martinie , Daniela Munteanu , G. Le Carval , Jean-Luc Autran
SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, Unknown, Unknown Region. pp.377+, ⟨10.1109/SISPAD.2008.4648316⟩
Communication dans un congrès hal-01759430 v1

Real-time neutron and alpha soft-error rate testing of CMOS 130nm SRAM: Altitude versus underground measurements

Jean-Luc Autran , P. Roche , S. Sauze , G. Gasiot , Daniela Munteanu et al.
2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, Unknown, Unknown Region. pp.233+, ⟨10.1109/ICICDT.2008.4567284⟩
Communication dans un congrès hal-01759432 v1
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3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates

Daniela Munteanu , Jean-Luc Autran , Mathieu Moreau
Conference on Radiation Effects on Components and Systems (RADECS), Sep 2008, Jyväskylä, Finland. pp.280-283, ⟨10.1109/RADECS.2008.5782727⟩
Communication dans un congrès hal-01841105 v1

Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs

Daniela Munteanu , M. Moreau , Jean-Luc Autran
NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION, 2008, Unknown, Unknown Region. pp.877+
Communication dans un congrès hal-01759433 v1

Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances

Sébastien Martinie , Sylvain Vedraine , Daniela Munteanu , Gilles Le Carval , Vincent Barral et al.
38th European Solid State Device Research Conference (ESSDERC’2008), Sep 2008, Edinburg, United Kingdom
Communication dans un congrès hal-01245391 v1

A simple compact model to analyze the impact of ballistic and quasi-ballistic transport on ring oscillator performance

S. Martinie , G. Le Carval , Daniela Munteanu , M-A Jaud , Jean-Luc Autran
2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, Unknown, Unknown Region. pp.273+, ⟨10.1109/ICICDT.2008.4567294⟩
Communication dans un congrès hal-01759429 v1
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Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

Daniela Munteanu , Jean-Luc Autran
10th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2007), Sep 2007, Deauville, France
Communication dans un congrès hal-04388670 v1

Will strain be useful for 10 nm quasi-ballistic FDSOI devices? An experimental study

Vincent Barral , T. Poiroux , F. Rochette , M. Vinet , S. Barraud et al.
2007 Symposium on VLSI Technology, Digest of Technical Papers, 2007, Kyoto, Japan. pp.128+, ⟨10.1109/VLSIT.2007.4339754⟩
Communication dans un congrès hal-01759441 v1

Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack

Vincent Barral , T. Poiroux , F. Andrieu , C. Buj-Dufournet , O. Faynot et al.
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, Unknown, Unknown Region. pp.61+, ⟨10.1109/IEDM.2007.4418863⟩
Communication dans un congrès hal-01759439 v1

Modélisation et simulation du transport dans les fils quantiques de silicium : propriétés électroniques et applications aux transistors

K. Nehari , N. Cavassilas , Fabienne Michelini , Jean-Luc Autran , M. Lannoo et al.
Proceedings Journées Nationales de Microélectronique et d'Optoélectronique (JNMO), 2006, Grenoble, France. pp.149
Communication dans un congrès hal-00148251 v1

Nano-transistor MOS à ergot

N. Cavassilas , Jean-Luc Autran , M. Bescond
Proceedings Journées Nationales de Microélectronique et d'Optoélectronique (JNMO), 2006, Grenoble, France. pp.275
Communication dans un congrès hal-00148253 v1

Influence of Simulation Parameters on the Bipolar Amplification in Fully-Depleted SOI Technologies under Heavy-Ion Irradiations

K. Castellani-Coulié , M. Xia , Daniela Munteanu , Jean-Luc Autran , V. Ferlet-Cavrois et al.
2005 8th European Conference on Radiation and Its Effects on Components and Systems, Sep 2005, Cap d'Agde, France. pp.G2-1-G2-6
Communication dans un congrès hal-02025578 v1

Investigation of 30nm Gate-All-Around MOSFET Sensitivity to Heavy Ions: a 3-D Simulation Study

K. Castellani-Coulié , Daniela Munteanu , Jean-Luc Autran , V. Ferlet-Cavrois , P. Paillet et al.
2005 8th European Conference on Radiation and Its Effects on Components and Systems, Sep 2005, Cap d'Agde, France. pp.G1-1-G1-8
Communication dans un congrès hal-02025580 v1

Quantum short-channel compact modeling of drain-current in double-gate MOSFET

Daniela Munteanu , Jean-Luc Autran , X Loussier , S Harrison , R Cerutti et al.
PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, Unknown, Unknown Region. pp.137-140, ⟨10.1109/ESSDER.2005.1546604⟩
Communication dans un congrès hal-01759453 v1

An analytical subthreshold current model for ballistic double-gate MOSFETs

Jean-Luc Autran , Daniela Munteanu , O Tintori , M Aubert , E Decarre
NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, Unknown, Unknown Region. pp.171-174
Communication dans un congrès hal-01759463 v1

3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

M Bescond , K Nehari , Jean-Luc Autran , N Cavassilas , Daniela Munteanu et al.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.617-620, ⟨10.1109/IEDM.2004.1419237⟩
Communication dans un congrès hal-01759466 v1

Simulation studies of the parasitic structures involved in the SEU mechanisms in SRAMs

B. Sagnes , Frédéric Saigné , J.-M. Palau , Jean-Luc Autran , M.-C. Calvet
5th European Workshop on Radiation and its Effects on Components and Systems, 2004, Madrid, Spain
Communication dans un congrès hal-01806844 v1

A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystals

D. Deleruyelle , C. Leroyer , B. de Salvo , G. Lecarval , M. Gely et al.
Silicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404
Communication dans un congrès hal-00485182 v1

Poly-gate replacement through contact hole (PRETCH): A new method for high-K/metal gate and multi-oxide implementation on chip

S Harrison , P Coronel , A Cros , R Cerutti , F Leverd et al.
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.291-294, ⟨10.1109/IEDM.2004.1419136⟩
Communication dans un congrès hal-01759469 v1

Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates

Jean-Luc Autran , Daniela Munteanu , O Tintori , S Harrison , E Decarre et al.
NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, Unknown, Unknown Region. pp.163-166
Communication dans un congrès hal-01759462 v1

Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack

Jean-Luc Autran , Daniela Munteanu , M Houssa , M Bescond , X Garros et al.
INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, 2004, Unknown, Unknown Region. pp.177-188
Communication dans un congrès hal-01759464 v1

Electrical characterization and modelling of high-performance SON DG MOSFETs

S Harrison , Daniela Munteanu , Jean-Luc Autran , A Cros , R Cerutti et al.
ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, Unknown, Unknown Region. pp.373-376, ⟨10.1109/ESSDER.2004.1356567⟩
Communication dans un congrès hal-01759468 v1

Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier Double-Gate MOSFET's

M Bescond , Jean-Luc Autran , Daniela Munteanu , N Cavassilas , M Lannoo
ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, Unknown, Unknown Region. pp.395-398, ⟨10.1109/ESSDERC.2003.1256897⟩
Communication dans un congrès hal-01759526 v1

Highly Performant Double Gate MOSFET realized with SON process

S Harrison , P Coronel , F Leverd , R Cerutti , R Palla et al.
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, Unknown, Unknown Region. pp.449-452
Communication dans un congrès hal-01759525 v1

Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystals

D. Deleruyelle , D. Fraboulet , B. de Salvo , N. Buffet , D. Mariolle et al.
Silicon Nano-electronics Workshop 2002, 2002, Honolulu, United States
Communication dans un congrès hal-00484534 v1