Jean-Luc Rouviere

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Publications

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Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography

J. Cañas , A. Grenier , J L Rouviere , A. Harikumar , S. Ndiaye et al.
Applied Physics Letters, 2025, 126 (11), pp.112101. ⟨10.1063/5.0242659⟩
Article dans une revue hal-04994349 v1

Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy

Anh My-Nhat Quach , Névine Rochat , Jean-Luc Rouvière , Jérôme Napierala , Bruno Daudin
Nanotechnology, 2024, ⟨10.1088/1361-6528/ad7b43⟩
Article dans une revue hal-04704842 v1
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Imaging Negative Charge around Single Vanadium Dopant Atoms in Monolayer Tungsten Diselenide Using 4D Scanning Transmission Electron Microscopy

Djordje Dosenovic , Samuel Dechamps , Kshipra Sharma , Jean-Luc Rouviere , Yiran Lu et al.
ACS Nano, 2024, 18 (34), pp.23354-23364. ⟨10.1021/acsnano.4c06561⟩
Article dans une revue hal-04688082 v1
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Correlative multi-spectroscopic and microscopic analyses for investigation of UV-C QDs bimodal emission

Adeline Grenier , Jesus Canaz , Névine Rochat , Zineb Saghi , Jean-Luc Rouviere et al.
BIO Web of Conferences, 2024, 129, pp.32002. ⟨10.1051/bioconf/202412932002⟩
Article dans une revue hal-04773075 v1
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Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate

N Chaize , X Baudry , P-H Jouneau , E Gautier , J-L Rouvière et al.
Nanotechnology, 2024, 35 (50), pp.505602. ⟨10.1088/1361-6528/ad7ff4⟩
Article dans une revue hal-04746498 v1

Effect of Extended Defects on AlGaN Quantum Dots for Electron-Pumped Ultraviolet Emitters

Jesus Cañas , Nevine Rochat , Adeline Grenier , Audrey Jannaud , Zineb Saghi et al.
ACS Nano, 2024, 18 (18), pp.11886-11897. ⟨10.1021/acsnano.4c01376⟩
Article dans une revue hal-04556808 v1

Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting

Enrico Di Russo , Francesco Sgarbossa , Pierpaolo Ranieri , Gianluigi Maggioni , Samba Ndiaye et al.
Applied Surface Science, 2023, 612, pp.155817. ⟨10.1016/j.apsusc.2022.155817⟩
Article dans une revue hal-03885778 v1
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Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers

Djordje Dosenovic , Samuel Dechamps , Celine Vergnaud , Sergej Pasko , Simonas Krotkus et al.
2D Materials, 2023, 10 (4), pp.045024. ⟨10.1088/2053-1583/acf3f9⟩
Article dans une revue hal-04291553 v1
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Ultrathin GaN quantum wells in AlN nanowires for UV-C emission

Rémy Vermeersch , Gwénolé Jacopin , Florian Castioni , Jean-Luc Rouvière , Alberto Garcia-Cristobal et al.
Nanotechnology, 2023, 34, pp.275603. ⟨10.1088/1361-6528/accaeb⟩
Article dans une revue hal-04064951 v1
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Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence

Alexandre Concordel , Névine Rochat , Anh My Nhat Quach , Jean-Luc Rouvière , Gwénolé Jacopin et al.
Nanotechnology, 2023, 34 (49), pp.495702. ⟨10.1088/1361-6528/acf473⟩
Article dans une revue hal-04192006 v1
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Assessment of Active Dopants and p–n Junction Abruptness Using In Situ Biased 4D-STEM

Bruno César da Silva , Zahra Sadre Momtaz , Eva Monroy , Hanako Okuno , Jean-Luc Rouviere et al.
Nano Letters, 2022, 22 (23), pp.9544-9550. ⟨10.1021/acs.nanolett.2c03684⟩
Article dans une revue hal-03881003 v1
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The influence of illumination conditions in the measurement of built-in electric field at p–n junctions by 4D-STEM

Bruno C da Silva , Zahra S Momtaz , Lucas Bruas , Jean-Luc Rouviére , Hanako Okuno et al.
Applied Physics Letters, 2022, 121 (12), pp.123503. ⟨10.1063/5.0104861⟩
Article dans une revue hal-03832206 v1

Practice of electron microscopy on nanoparticles sensitive to radiation damage: CsPbBr3 nanocrystals as a case study

Tuan Duong , Kshipra Sharma , Fabio Agnese , Jean-Luc Rouviere , Hanako Okuno et al.
Frontiers in Chemistry, 2022, 10, ⟨10.3389/fchem.2022.1058620⟩
Article dans une revue hal-04469338 v1

Practice of electron microscopy on nanoparticles sensitive to radiation damage: CsPbBr3 nanocrystals as a case study

Tuan Duong , Kshipra Sharma , Fabio Agnese , Jean-Luc Rouviere , Hanako Okuno et al.
Frontiers in Chemistry, 2022, 10, pp.1058620. ⟨10.3389/fchem.2022.1058620⟩
Article dans une revue hal-03959400 v1
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The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

Bruno Daudin , Alexandra-Madalina Siladie , Marion Gruart , M. den Hertog , Catherine Bougerol et al.
Nanotechnology, 2021, 32 (8), pp.085606. ⟨10.1088/1361-6528/abc780⟩
Article dans une revue hal-03429491 v1

High-sensitivity mapping of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase contrast

Victor Boureau , M Staňo , Jean-Luc Rouviere , Jean-Christophe Toussaint , Olivier Fruchart et al.
Journal of Physics D: Applied Physics, 2021, 54 (8), pp.085001. ⟨10.1088/1361-6463/abc77d⟩
Article dans une revue hal-02919930 v1
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Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

Bruno Daudin , Fabrice Donatini , Catherine Bougerol , Bruno Gayral , Edith Bellet-Amalric et al.
Nanotechnology, 2021, 32 (2), pp.025601. ⟨10.1088/1361-6528/abb6a5⟩
Article dans une revue hal-02991749 v1
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Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

D. V. Beznasyuk , P. Stepanov , Jean-Luc Rouvière , F. Glas , M. Verheijen et al.
Physical Review Materials, 2020, 4 (7), pp.074607. ⟨10.1103/PhysRevMaterials.4.074607⟩
Article dans une revue hal-02429832 v1
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Studying phase change memory devices by coupling scanning precession electron diffraction and energy dispersive X-ray analysis

Loïc Henry , Nicolas Bernier , Martin Jacob , Gabriele Navarro , Laurent Clément et al.
Acta Materialia, 2020, 201, pp.72 - 78. ⟨10.1016/j.actamat.2020.09.033⟩
Article dans une revue hal-03493618 v1

Improved measurement of electric fields by nanobeam precession electron diffraction

L. Bruas , V. Boureau , A. Conlan , S. Martinie , Jean-Luc Rouviere et al.
Journal of Applied Physics, 2020, 127 (20), pp.205703. ⟨10.1063/5.0006969⟩
Article dans une revue hal-03798997 v1
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Direct comparison of off-axis holography and differential phase contrast for the mapping of electric fields in semiconductors by transmission electron microscopy

Benedikt Haas , Jean-Luc Rouviere , Victor Boureau , Remy Berthier , David Cooper
Ultramicroscopy, 2019, 198, pp.58-72. ⟨10.1016/j.ultramic.2018.12.003⟩
Article dans une revue cea-02186458 v1
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In Situ Transmission Electron Microscopy Analysis of Copper–Germanium Nanowire Solid-State Reaction

Khalil El Hajraoui , Eric Robin , Clemens Zeiner , Alois Lugstein , Stéphanie Kodjikian et al.
Nano Letters, 2019, 19 (12), pp.8365-8371. ⟨10.1021/acs.nanolett.9b01797⟩
Article dans une revue hal-02544426 v1
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Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Alexandre Concordel , Gwenolé Jacopin , Bruno Gayral , Núria Garro , Ana Cros et al.
Applied Physics Letters, 2019, 114 (17), pp.172101. ⟨10.1063/1.5094627⟩
Article dans une revue hal-02127433 v1

Understanding the Crystallization Behavior of Surface-Oxidized GeTe Thin Films for Phase-Change Memory Application

Andrea Kolb , Nicolas Bernier , Eric Robin , Anass Benayad , Jean-Luc Rouviere et al.
ACS Applied Electronic Materials, 2019, 1 (5), pp.701-710. ⟨10.1021/acsaelm.9b00070⟩
Article dans une revue hal-02311359 v1
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Incommensurate grain boundary in silicon and the silver-ratio sequence

Frédéric Lançon , Nina Gunkelmann , Damien Caliste , Jean-Luc Rouvière
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2019, 100 (11), ⟨10.1103/PhysRevB.100.115307⟩
Article dans une revue hal-02284426 v1
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In Situ Transmission Electron Microscopy Analysis of Aluminum–Germanium Nanowire Solid-State Reaction

Khalil El Hajraoui , Minh Anh Luong , Eric Robin , Florian Brunbauer , Clemens Zeiner et al.
Nano Letters, 2019, 19 (5), pp.2897-2904. ⟨10.1021/acs.nanolett.8b05171⟩
Article dans une revue hal-02910070 v1

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

S. Reboh , R. Coquand , S. Barraud , N. Loubet , N. Bernier et al.
Applied Physics Letters, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩
Article dans une revue hal-02071864 v1

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

Honggyu Kim , Yifei Meng , Ji-Hwan Kwon , Jean-Luc Rouviere , Jian Min Zuo
International Union of Crystallography journal, 2018, 5 (1), pp.67-72. ⟨10.1107/S2052252517016219⟩
Article dans une revue hal-02071865 v1

Proposition of a model elucidating the AlN-on-Si (111) microstructure

N. Mante , S. Rennesson , E. Frayssinet , L. Largeau , F. Semond et al.
Journal of Applied Physics, 2018, 123 (21), pp.215701. ⟨10.1063/1.5017550⟩
Article dans une revue hal-02322400 v1
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Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques

Joyce Roque , Georges Beainy , Névine Rochat , Nicolas Bernier , Sylvain David et al.
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (4), pp.042901. ⟨10.1116/1.5033363⟩
Article dans une revue hal-01947865 v1

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

J. Roque , B. Haas , S. David , N. Rochat , N. Bernier et al.
Applied Physics Letters, 2018, 112 (20), pp.202104. ⟨10.1063/1.5027163⟩
Article dans une revue hal-01947882 v1

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J. Rouvière et al.
Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩
Article dans une revue hal-01954336 v1

Graphene as a Mechanically Active, Deformable Two-Dimensional Surfactant

Sergio Vlaic , N. Rougemaille , Alexandre Artaud , Vincent Renard , Loic Huder et al.
Journal of Physical Chemistry Letters, 2018, 9 (10), pp.2523-2531. ⟨10.1021/acs.jpclett.8b00586⟩
Article dans une revue hal-01781881 v1

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

J Aubin , J. Hartmann , A. Gassenq , J. Rouvière , Eric Robin et al.
Semiconductor Science and Technology, 2017, 32 (9), pp.094006. ⟨10.1088/1361-6641/aa8084⟩
Article dans une revue hal-02045752 v1

High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction

David Cooper , Nicolas Bernier , Jean-Luc Rouviere , Jean-Luc Rouvière , Yun-Yu Wang et al.
Applied Physics Letters, 2017, 110 (22), pp.223109
Article dans une revue hal-01998271 v1

Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice

Honggyu Kim , Yifei Meng , Jean-Luc Rouviere , Jian-Min Zuo
Micron, 2017, 92, pp.6-12. ⟨10.1016/j.micron.2016.10.003⟩
Article dans une revue hal-02071868 v1

High precision strain mapping of topological insulator HgTe/CdTe

Benedikt Haas , Candice Thomas , Pierre-Henri Jouneau , Nicolas Bernier , Tristan Meunier et al.
Applied Physics Letters, 2017, 110 (26), pp.263102. ⟨10.1063/1.4989822⟩
Article dans une revue hal-01980854 v1

High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation

Shan-Ting Zhang , Jean-Luc Rouvière , Vincent Consonni , Hervé Roussel , Laetitia Rapenne et al.
Materials & Design, 2017, 132, pp.518-525. ⟨10.1016/j.matdes.2017.07.037⟩
Article dans une revue hal-01758851 v1

Growth mechanism of InGaN nanoumbrellas

Xin Zhang , Benedikt Haas , Jean-Luc Rouviere , Eric Robin , Bruno Daudin
Nanotechnology, 2016, 27 (45), pp.455603. ⟨10.1088/0957-4484/27/45/455603⟩
Article dans une revue cea-01851933 v1

Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model

Johan Pelloux-Prayer , Mikael Casse , Francois Triozon , Sylvain Barraud , Yann-Michel Niquet et al.
Solid-State Electronics, 2016, 125, pp.175-181. ⟨10.1016/j.sse.2016.09.002⟩
Article dans une revue cea-01851576 v1

InGaN nanowires with high InN molar fraction: growth, structural and optical properties

Xin Zhang , Hugo Lourenco-Martins , Sophie Meuret , Mathieu Kociak , Benedikt Haas et al.
Nanotechnology, 2016, 27 (19), pp.195704. ⟨10.1088/0957-4484/27/19/195704⟩
Article dans une revue cea-01851934 v1

Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

David Cooper , Thibaud Denneulin , Nicolas Bernier , Armand Beche , Jean-Luc Rouviere
Micron, 2016, 80, pp.145-165. ⟨10.1016/j.micron.2015.09.001⟩
Article dans une revue cea-01849438 v1

Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction

Yannick Martin , Jean-Luc Rouviere , J. M. Zuo , Vincent Favre-Nicolin
Ultramicroscopy, 2016, 160, pp.64-73. ⟨10.1016/j.ulisamic.2014.12.009⟩
Article dans une revue cea-01851578 v1

Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

B. Bonef , B. Haas , J-L. Rouvière , R. André , C. Bougerol et al.
Journal of Microscopy, 2016, 262 (2), pp.178 - 182. ⟨10.1111/jmi.12340⟩
Article dans une revue hal-01390785 v1
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Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

Bastien Bonef , Lionel Gérard , Jean-Luc Rouvière , Adeline Grenier , Pierre-Henri Jouneau et al.
Applied Physics Letters, 2015, 106 (5), pp.051904. ⟨10.1063/1.4907648⟩
Article dans une revue hal-01132475 v1

The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

Thomas Auzelle , Benedikt Haas , Albert Minj , Catherine Bougerol , Jean-Luc Rouviere et al.
Journal of Applied Physics, 2015, 117 (24), pp.245303. ⟨10.1063/1.4923024⟩
Article dans une revue hal-02071872 v1

Solving difficult structures with electron diffraction

J. M. Zuo , Jean-Luc Rouvière
International Union of Crystallography journal, 2015, 2, pp.7-8. ⟨10.1107/s2052252514026797⟩
Article dans une revue hal-01616541 v1

Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction

David Cooper , Nicolas Bernier , Jean-Luc Rouvière
Nano Letters, 2015, 15 (8), pp.5289-5294. ⟨10.1021/acs.nanolett.5b01614⟩
Article dans une revue hal-01588268 v1

Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

Y. Y. Wang , David Cooper , Jean-Luc Rouvière , C. E. Murray , N. Bernier et al.
Applied Physics Letters, 2015, 106 (4), pp.042104. ⟨10.1063/1.4906513⟩
Article dans une revue hal-01616542 v1
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Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries

Thomas Auzelle , Benedikt Haas , Martien den Hertog , Jean-Luc Rouvière , Bruno Daudin et al.
Applied Physics Letters, 2015, 107 (5), pp.051904. ⟨10.1063/1.4927826⟩
Article dans une revue hal-01586122 v1

Lattice and strain analysis of atomic resolution Z-contrast images based on template matching

Jian-Min Zuo , Amish Shah , Honggyu Kim , Yifei Meng , Wenpei Gao et al.
Ultramicroscopy, 2014, 136, pp.50-60. ⟨10.1016/j.ultramic.2013.07.018⟩
Article dans une revue hal-01972657 v1
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Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera

Matthieu M.P. Vigouroux , V. Delaye , N. N. Bernier , R. Cipro , D. Lafond et al.
Applied Physics Letters, 2014, 105 (19), pp.191906. ⟨10.1063/1.4901435⟩
Article dans une revue hal-01103079 v1

Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices

Yifei Meng , Honggyu Kim , Jean-Luc Rouviere , Dieter Isheim , David Seidman et al.
Journal of Applied Physics, 2014, 116 (1), pp.013513. ⟨10.1063/1.4887078⟩
Article dans une revue hal-02071157 v1

Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode

Thibaud Denneulin , D. Cooper , J.L. Rouvière
Micron, 2014, 62, pp.52-65. ⟨10.1016/j.micron.2014.02.017⟩
Article dans une revue hal-02071149 v1

Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure

R. Galand , G. Brunetti , L. Arnaud , J.L. Rouviere , L. Clement et al.
Microelectronic Engineering, 2013, 106, pp.168-171. ⟨10.1016/j.mee.2013.01.018⟩
Article dans une revue istex hal-00850231 v1

Measuring Lattice Parameters and Local Rotation using Convergent Beam Electron Diffraction: One Step Further

Y. Martin , J.-M. Zuo , V. Favre-Nicolin , J.-L. Rouvière
Microscopy and Microanalysis, 2013, 19 (S2), pp.710-711. ⟨10.1017/S1431927613005540⟩
Article dans une revue hal-02071123 v1

Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering

D. Jalabert , D. Pelloux-Gervais , A. Béché , J. Hartmann , P. Gergaud et al.
Physica Status Solidi A (applications and materials science), 2012, 209 (2), pp.262-265
Article dans une revue hal-01965024 v1

Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensors

Martien den Hertog , F. Gonzalez-Posada , Rudeesun Songmuang , Jean-Luc Rouviere , Thierry Fournier et al.
Nano Letters, 2012, 12, pp.5691-5696. ⟨10.1021/nl302890f⟩
Article dans une revue hal-00863667 v1
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The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains

Thibaud Denneulin , David Cooper , Jean-Michel Hartmann , Jean-Luc Rouvière
Journal of Applied Physics, 2012, 112 (9), pp.094314. ⟨10.1063/1.4764045⟩
Article dans une revue hal-02145343 v1
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Hidden defects in silicon nanowires

Martien den Hertog , Cyril Cayron , Pascal Gentile , Florian Dhalluin , Fabrice Oehle et al.
Nanotechnology, 2011, 23, pp.025701. ⟨10.1088/0957-4484/23/2/025701⟩
Article dans une revue hal-00719753 v1

Confirmation of the Domino-Cascade Model by LiFePO(4)/FePO(4) Precession Electron Diffraction

G. Brunetti , D. Robert , P. Bayle-Guillemaud , J.L. Rouviere , E.F. Rauch et al.
Chemistry of Materials, 2011, 23 (20), pp.4515-4524. ⟨10.1021/cm201783z⟩
Article dans une revue hal-00664175 v1

Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis

M.-I. Richard , J.-L. Rouvière , T.-S. Yoon , E. Holmström , Y.-H. Xie et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075314. ⟨10.1103/PhysRevB.84.075314⟩
Article dans une revue hal-01811420 v1

The morphology of silicon nanowires grown in the presence of trimethylaluminium

F. Oehler , P. Gentile , T. Baron , M. den Hertog , J.L. Rouviere et al.
Nanotechnology, 2009, pp.20 (24): Art. No. 245602 JUN 17 2009
Article dans une revue hal-00455406 v1

Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

B. Salem , F. Dhalluin , T. Baron , H. Jamgotchian , F. Bedu et al.
Materials Science and Engineering: B, 2009, 159-160, pp.83-86
Article dans une revue hal-00453724 v1

Alternate dissociation of the screw dislocations in a (001) buried small-angle twist boundary in silicon

R. Bonnet , M. Loubradou , S. Youssef , J.L. Rouvière , F. Fournel
Philosophical Magazine, 2009, 89 (5), pp.413-434
Article dans une revue hal-00389424 v1

Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

B. Salem , F. Dhalluin , T. Baron , H. Jamgotchian , F. Bedu et al.
Materials Science and Engineering, 2009, pp.B 159-160 83-86
Article dans une revue hal-00395832 v1

Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

C. Cayron , M. den Hertog , L. Latu-Romain , C. Mouchet , C. Secouard et al.
Journal of Applied Crystallography, 2009, 42, (2009), p1-11
Article dans une revue hal-00394399 v1

The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

P. Noe , H. Okuno , J.-B. Jager , E Delamadeleine , O. Demichel et al.
Nanotechnology, 2009, 20 (35), pp.355704. ⟨10.1088/0957-4484/20/35/355704⟩
Article dans une revue istex cea-01989752 v1

Silicon nanowires grown in nanoporous alumina matrices on <100> oriented silicon substrates investigated by electron microscopy

T. David , D. Buttard , M. den Hertog , P. Gentile , T. Baron et al.
Superlatice and Microstructures, 2008, pp.44 (4-5) October-November (2008) 354-361
Article dans une revue hal-00394793 v1

Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates

K. Aissou , T. Baron , M. Kogelschatz , M. den Hertog , J.L. Rouviere et al.
Chemistry of Materials, 2008, pp.20 6183-6188
Article dans une revue hal-00394788 v1

A new architecture for self-organized silicon nanowire growth integrated on a (100) silicon substrate

D. Buttard , T. David , P. Gentile , M. den Hertog , T. Baron et al.
Physica Status Solidi A (applications and materials science), 2008, pp.Vol 205, Issue 7, July (2008) 1606-1614
Article dans une revue hal-00394787 v1
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Control of gold surface diffusion on Si nanowires

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Nano Letters, 2008, 8, pp.1544-1550. ⟨10.1021/nl073356i⟩
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Florian Dhalluin , Pierre J Desré , Martien den Hertog , Jean-Luc Rouviere , Pierre Ferret et al.
Journal of Applied Physics, 2007, 102 (9), pp.094906. ⟨10.1063/1.2811935⟩
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Marie Cheynet , Simone Pokrant , Frans Tichelaar , Jean-Luc Rouvière
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Florent Houdellier , Christian Roucau , L. Clement , J.L. Rouvière , Marie-José Casanove
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Virginie Chamard , T Schülli , M. Sztucki , T. H. Metzger , E. Sarigiannidou et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69, pp.125327. ⟨10.1103/PhysRevB.69.125327⟩
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C. Adelmann , E. Sarigiannidou , D. Jalabert , Y. Hori , J.-L. Rouvière et al.
Applied Physics Letters, 2003, 82 (23), pp.4154-4156. ⟨10.1063/1.1581386⟩
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C. Adelmann , J. Brault , J.-L. Rouvière , H. Mariette , Guido Mula et al.
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E. Martinez-Guerrero , F. Chabuel , B. Daudin , J. Rouvière , H. Mariette
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L. Marsal , L. Besombes , F. Tinjod , K. Kheng , A. Wasiela et al.
Journal of Applied Physics, 2002, 91 (8), pp.4936-4943. ⟨10.1063/1.1436560⟩
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H. Mariette , L. Marsal , L. Besombes , F. Tinjod , B. Gilles et al.
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D. Sotta , V. Calvo , H. Ulmer-Tuffigo , N. Magnea , Emmanuel Hadji et al.
Materials Science and Engineering: B, 2001, 81 (1-3), pp.43-45
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Bruno Daudin , Guy Feuillet , H. Mariette , Guido Mula , Nikolaos Pelekanos et al.
Japanese Journal of Applied Physics, 2001, 40 (3S), pp.1892. ⟨10.1143/JJAP.40.1892⟩
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B. Daudin , G. Feuillet , Guido Mula , H. Mariette , J.L. Rouvière et al.
Diamond and Related Materials, 2000, 9 (3-6), pp.506-511. ⟨10.1016/S0925-9635(99)00220-4⟩
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Nanometric patterning with ultrathin twist bonded silicon wafers

F. Fournel , H. Moriceau , N. Magnea , J. Eymery , B Buttard et al.
Thin Solid Films, 2000, 380 (1-2), pp.10 - 14. ⟨10.1016/S0040-6090(00)01460-7⟩
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M. Arlery , J. Rouvière , F. Widmann , B. Daudin , G. Feuillet et al.
Applied Physics Letters, 1999, 74 (22), pp.3287-3289. ⟨10.1063/1.123321⟩
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Nanoscale cluster formation on CdTe epilayers

L Marsal , Y Samson , J.L Rouvière , H Mariette
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H Mariette , M Charleux , J.M Hartmann , F Kany , D Martrou et al.
Microelectronics Journal, 1999, 30 (4-5), pp.329-334. ⟨10.1016/S0026-2692(98)00128-1⟩
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J.M. Hartmann , F. Kany , F. Chautain , J.L. Rouvière , A. Wasiela et al.
Journal of Crystal Growth, 1998, 184-185, pp.279-282. ⟨10.1016/S0022-0248(98)80059-6⟩
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L. Marsal , H. Mariette , Y. Samson , J. Rouvière , E. Picard
Applied Physics Letters, 1998, 73 (20), pp.2974-2976. ⟨10.1063/1.122648⟩
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J. Hartmann , F. Kany , M. Charleux , Y. Samson , J. Rouvière et al.
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Comparative study of hexagonal and cubic GaN growth by RF-MBE

G. Feuillet , F. Widmann , B. Daudin , J. Schuler , M. Arlery et al.
Materials Science and Engineering: B, 1997, 50, pp.233-237
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Growth of CdTe/MnTe tilted and serpentine lattices on vicinal surfaces

J. Hartmann , M. Charleux , J. Rouvière , H. Mariette
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J.M Hartmann , M Charleux , H Mariette , J.L Rouvière
Applied Surface Science, 1997, 112, pp.142-147. ⟨10.1016/S0169-4332(96)00978-6⟩
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Jl Rouviere , M. Arlery , B. Daudin , G. Feuillet , Olivier Briot
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MOVPE growth and characterization of AlxGa1-xN

Sandra Ruffenach , Olivier Briot , Jl Rouviere , Bernard Gil , Roger Aulombard
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Titanium Evolution Under Neutron Irradiation in NixC1-x/Ti Multilayers

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Extended synchrotron X-ray reflectivity study of a Sm-based layer buried into CdTe(001)

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ANALYSIS OF STRUCTURES OF SYMMETRICAL [001] TILT GRAIN BOUNDARIES IN SILICON AND GERMANIUM

J.-L. Rouviere , A. Bourret
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Existence of a bicontinuous zone in microemulsion systems

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Journal de Physique Lettres, 1980, 41 (18), pp.437-440. ⟨10.1051/jphyslet:019800041018043700⟩
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Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Reynald Alcotte , Bassem Salem et al.
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J. Hidalgo , T. Delahaye , G. Leturcq , Jean-Luc Rouviere
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2017 EMRS Fall Meeting, 2017, Warsaw, Poland
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Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière et al.
E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland
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Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière et al.
17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France
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Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale

J. Pelloux-Prayer , M. Cassé , S. Barraud , F. Triozon , Z. Zeng et al.
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Fabio Agnese , Aurélie Lefrançois , Stéphanie Pouget , Louis Vaure , Ourania Makrygenni et al.
European Microscopy Congress 2016, Aug 2016, Lyon, France. ⟨10.1002/9783527808465.EMC2016.5986⟩
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J. Pelloux-Prayer , M. Cassé , S. Barraud , P. Nguyen , M. Koyama et al.
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, France. pp.20.5.1-20.5.4
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Structural and Optical Properties of GaN Quantum Dots

B. Daudin , N. Gogneau , C. Adelmann , E. Sarigiannidou , T. Andreev et al.
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Formation Study of Organized Nanodots and Nanowires through Copolymer Diblock Technology

C. Agraffeil , G. Gay , T. Baron , B. Salhi , M. Kogelschatz et al.
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T. Baron , F. Dhalluin , B. Salem , B. Salhi , H. Abed et al.
216th ECS Meeting in Vienna, 2009, Vienne, Austria
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Investigation de films minces d'HfO2 par HRTEM et EELS (poster)

M.C. Cheynet , S. Pokrant , F. Tichelaar , J.L. Rouvière
Xème colloque de la Société Française des Microscopies, Jun 2007, Grenoble, France
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Small-diameter silicon nanowires growth by CVD Au catalyzed

P. Gentile , T. David , D. Buttard , M. den Hertog , J.L. Rouviere et al.
E-MRS, 2007, strasbourg, France
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Catalyst Assisted Silicon Nanowires Growth for Nanoelectronics

F. Dhalluin , P. Desre , T. Baron , P. Ferret , B. Salem et al.
E-MRS, 2007, strasbourg, France
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Electron microscopy of gold catalyser silicon nanowires : defects in the wires and gold on the wires

M. den Hertog , J.L. Rouviere , F. Dhalluin , P. Gentile , P. Ferret et al.
GDR Nanofils, 2007, ECULLY, France
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Small diameter silicon nanowires growth by CVD Au catalyzed

P. Gentile , T. David , D. Buttard , M. den Hertog , J.L. Rouviere et al.
397 WE-Heraeus-Seminar, 2007, Bonn, Germany
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Croissance VLS de nanofils de Si de diamètre inférieur à 10 nm

F. Dhalluin , M. den Hertog , P. Gentile , P. Ferret , J.L. Rouviere
GDR Nanofils, 2007, Ecully, France
Communication dans un congrès hal-00396923 v1

Growth study of CVD Au calayzed Si nanowires and integration in an organized nanoporous alumina template

P. Gentile , T. David , D. Buttard , M. den Hertog , J.L. Rouviere et al.
MRS Fall Meeting Boston, Symposium Q, 2006, boston, United States
Communication dans un congrès hal-00395869 v1

Gold Catalyzed Growth of Silicon Nanowires by Chemical Vapor Deposition

F. Dhalluin , T. Baron , P. Ferret , P. Gentile , J.L. Rouviere
E-MRS Spring Meeting, 2006, nice, France
Communication dans un congrès hal-00395858 v1

Croissance catalytique de nanofils Si par VLS-CVD

F. Dhalluin , M. den Hertog , J.L. Rouviére , P. Gentile , P. Ferret et al.
GDR Nanofils, 2006, Lille, France
Communication dans un congrès hal-00396915 v1

Feasibility of Si Nanowire Integration: CVD Growth, Characterization and Comparison of Au vs PtSi Catalysts

T. Baron , M. Gordon , F. Dhalluin , M. den Hertog , P. Ferret et al.
2006 MRS Fall Meeting, 2006, Boston, United States
Communication dans un congrès hal-00390626 v1

Evidence of Au on lateral surfaces on Si nanowires

M. den Hertog , J.L. Rouviere , F. Dhalluin , P. Gentile , P. Ferret et al.
GDR Nanofils, Jul 2006, lille, France
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Chemical profiles in AlGaN/GaN quantum wells: a CTEM, HRTEM and EFTEM comparison

Jean-Luc Rouviere , Pascale Bayle-Guillemaud , G. Radtke , S. Groh , Olivier Briot
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, Mar 2001, OXFORD (ENGLAND), United Kingdom. pp.17-20
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Evidence for atomic mixing induced in metallic bilayers by electronic energy deposition

R. Leguay , M.A. Dunlop , F. Dunstetter , N. Lorenzelli , A. Braslau et al.
Nanometric Phenomena Induced By Laser, Ion and Cluster Beams E-Mrs '96 Spring Meeting Symposium K, 1997, Strasbourg, France. pp.481-502
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Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

Jl Rouviere , M. Arlery , R. Niebuhr , Kh Bachem , Olivier Briot
European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.161-166
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