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Jean Paul Salvestrini

105
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A cost-effective technology to improve power performance of nanoribbons GaN HEMTs

Ali Soltani , Brahim Benbakhti , J.-C. Gerbedoen , Abdelkrim Khediri , Maher, Hassan et al.
Applied Physics Letters, 2022, 120 (4), pp.042102. ⟨10.1063/5.0080240⟩
Journal articles hal-03544158v1

Thermal Stability of Thin hexagonal Boron Nitride grown by MOVPE on Epigraphene

Vishnu Ottapilakkal , Abhishek Juyal , Suresh Sundaram , A. Mballo , P. Vuong et al.
Journal of Crystal Growth, inPress
Journal articles hal-03818508v1
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MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics

Suresh Sundaram , Phuong Vuong , Adama Mballo , Taha Ayari , Soufiane Karrakchou et al.
APL Materials, 2021, 9 (6), pp.061101. ⟨10.1063/5.0049306⟩
Journal articles hal-03350328v1

Optical characterization by photoreflectance of GaN after its partial thermal decomposition

W. Malek , A. Kahouli , M. Bouzidi , N. Chaaben , Abdullah Alshammari et al.
Optik, 2021, 248, pp.168070. ⟨10.1016/j.ijleo.2021.168070⟩
Journal articles hal-03445791v1

Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE

I. Daldoul , S. Othmani , A. Mballo , P. Vuong , Jean-Paul Salvestrini et al.
Materials Science in Semiconductor Processing, 2021, 132, pp.105909. ⟨10.1016/j.mssp.2021.105909⟩
Journal articles hal-03350514v1

Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

Adama Mballo , Ashutosh Srivastava , Suresh Sundaram , Phuong Vuong , Soufiane Karrakchou et al.
Nanomaterials, 2021, 11 (1), pp.211. ⟨10.3390/nano11010211⟩
Journal articles hal-03117696v1
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Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

Soufiane Karrakchou , Suresh Sundaram , Rajat Gujrati , Phuong Vuong , Adama Mballo et al.
ACS Applied Electronic Materials, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩
Journal articles hal-03350389v1
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Single crystalline boron rich B(Al)N alloys grown by MOVPE

P. Vuong , A. Mballo , S. Sundaram , G. Patriarche , Y. Halfaya et al.
Applied Physics Letters, 2020, 116 (4), pp.042101. ⟨10.1063/1.5135505⟩
Journal articles hal-02464319v1
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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Soufiane Karrakchou , Suresh Sundaram , Taha Ayari , Adama Mballo , Phuong Vuong et al.
Scientific Reports, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩
Journal articles hal-03120983v1
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Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

Phuong Vuong , Suresh Sundaram , Adama Mballo , Gilles Patriarche , Stefano Leone et al.
ACS Applied Materials & Interfaces, 2020, 12 (49), pp.55460 - 55466. ⟨10.1021/acsami.0c16850⟩
Journal articles hal-03350674v1
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Photovoltaic Concentration: Research and Development

Sarah El Himer , Salima El Ayane , Sara El Yahyaoui , Jean-Paul Salvestrini , Ali Ahaitouf et al.
Energies, 2020, 13 (21), pp.5721. ⟨10.3390/en13215721⟩
Journal articles hal-03350722v1
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Nanopyramid-based absorber to boost the efficiency of InGaN solar cells

Walid El Huni , Soufiane Karrakchou , Yacine Halfaya , Muhammad Arif , Matthew B Jordan et al.
Solar Energy, 2019, 190, pp.93-103. ⟨10.1016/j.solener.2019.07.090⟩
Journal articles hal-02282639v1

Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)

Suresh Sundaram , Xin Li , Yacine Halfaya , Taha Ayari , Gilles Patriarche et al.
Advanced Materials Interfaces, 2019, 6 (16), pp.1970102. ⟨10.1002/admi.201970102⟩
Journal articles hal-02282666v1

Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)

Taha Ayari , Suresh Sundaram , Chris Bishop , Adama Mballo , Phuong Vuong et al.
Advanced Materials Technologies, 2019, 4 (10), pp.1970057. ⟨10.1002/admt.201970057⟩
Journal articles hal-02321646v1

Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates

J. Laifi , C. Saidi , N. Chaaben , A. Bchetnia , Y. El Gmili et al.
Materials Science in Semiconductor Processing, 2019, 101, pp.253-261. ⟨10.1016/j.mssp.2019.06.006⟩
Journal articles hal-02282621v1

Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

Suresh Sundaram , Xin Li , Yacine Halfaya , Taha Ayari , Gilles Patriarche et al.
Advanced Materials Interfaces, 2019, pp.1900207. ⟨10.1002/admi.201900207⟩
Journal articles hal-02160835v1

MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates

Suresh Sundaram , Xin Li , Saiful Alam , Taha Ayari , Yacine Halfaya et al.
Journal of Crystal Growth, 2019, 507, pp.352-356. ⟨10.1016/j.jcrysgro.2018.10.060⟩
Journal articles hal-02282679v1
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Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

Taha Ayari , Suresh Sundaram , Xin Li , Saiful Alam , Chris Bishop et al.
ACS photonics, 2018, 5 (8), pp.3003-3008. ⟨10.1021/acsphotonics.8b00663⟩
Journal articles hal-02158426v1
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Observation of the early stages of GaN thermal decomposition at 1200 °C under N2

H. Bouazizi , M. Bouzidi , N. Chaaben , Y. El Gmili , Jean-Paul Salvestrini et al.
Materials Science and Engineering: B, 2018, 227, pp.16-21. ⟨10.1016/j.mseb.2017.10.002⟩
Journal articles hal-01831065v1
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Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery

C Munson , Q. Gaimard , Kamel Merghem , S. Sundaram , J. Rogers et al.
Journal of Physics D: Applied Physics, 2018, 51 (3), pp.035101. ⟨10.1088/1361-6463/aa9e41⟩
Journal articles cea-01765048v1

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Y. El Gmili , P. Bonanno , S. Sundaram , Xiaojian Li , R. Puybaret et al.
Optical Materials Express, 2017, 7 (2), ⟨10.1364/OME.7.000376⟩
Journal articles hal-01830918v1

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Xin Li , Matthew B Jordan , Taha Ayari , Suresh Sundaram , Youssef El Gmili et al.
Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-00865-7⟩
Journal articles hal-01830854v1
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Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature

J. Laifi , N. Chaaben , Y. El Gmili , Jean-Paul Salvestrini , A. Bchetnia et al.
Vacuum, 2017, 138, pp.8-14. ⟨10.1016/j.vacuum.2017.01.007⟩
Journal articles hal-01830926v1

Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells

Saiful Alam , Suresh Sundaram , Helge Haas , Xin Li , Youssef El Gmili et al.
physica status solidi (a), 2017, 214 (4), ⟨10.1002/pssa.201600496⟩
Journal articles hal-01830889v1

Optimization of semibulk InGaN-based solar cell using realistic modeling

Walid El-Huni , Anne Migan-Dubois , Zakaria Djebbour , Paul L. Voss , Jean-Paul Salvestrini et al.
Solar Energy, 2017, 157, pp.687-691. ⟨10.1016/j.solener.2017.08.074⟩
Journal articles hal-01630066v1
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InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop

Saiful Alam , Suresh Sundaram , Miryam Elouneg-Jamroz , Xin Li , Youssef El Gmili et al.
Superlattices and Microstructures, 2017, 104, pp.291-297. ⟨10.1016/j.spmi.2017.02.036⟩
Journal articles hal-01830907v1
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Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Renaud Puybaret , David Rogers , Youssef El Gmili , Suresh Sundaram , Matthew B Jordan et al.
Nanotechnology, 2017, 28 (19), pp.195304. ⟨10.1088/1361-6528/aa6a43⟩
Journal articles hal-01830993v1

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

Taha Ayari , Chris Bishop , Matthew B Jordan , Suresh Sundaram , Xin Li et al.
Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-15065-6⟩
Journal articles hal-01824881v1
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Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode

Sarrah Amor , Ali Ahaitouf , Abdelaziz Ahaitouf , Jean-Paul Salvestrini , Abdallah Ougazzaden et al.
Superlattices and Microstructures, 2017, 101, pp.529-536. ⟨10.1016/j.spmi.2016.11.011⟩
Journal articles hal-01830928v1
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Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I – V and admittance measurement

Neslihan Ayarci Kuruoğlu , Orhan Özdemir , Kutsal Bozkurt , Suresh Sundaram , Jean-Paul Salvestrini et al.
Journal of Physics D: Applied Physics, 2017, 50 (50), ⟨10.1088/1361-6463/aa98b2⟩
Journal articles hal-01831076v1

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

M. Arif , W. Elhuni , J. Streque , S. Sundaram , S. Belahsene et al.
Solar Energy Materials and Solar Cells, 2017, 159, pp.405 - 411. ⟨10.1016/j.solmat.2016.09.030⟩
Journal articles hal-01420490v1
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Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission

Saiful Alam , Suresh Sundaram , Xin Li , Miryam Jamroz , Youssef El Gmili et al.
physica status solidi (a), 2017, 214 (8), pp.1600868. ⟨10.1002/pssa.201600868⟩
Journal articles hal-01830966v1
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Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Saiful Alam , Suresh Sundaram , Xin Li , Youssef El Gmili , Miryam Elouneg-Jamroz et al.
Superlattices and Microstructures, 2017, 112, pp.279-286. ⟨10.1016/j.spmi.2017.09.032⟩
Journal articles hal-01831029v1

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Xin Li , Suresh Sundaram , Youssef El Gmili , Taha Ayari , Renaud Puybaret et al.
Crystal Growth & Design, 2016, 16 (6), pp.3409-3415. ⟨10.1021/acs.cgd.6b00398⟩
Journal articles hal-02385055v1

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Taha Ayari , Suresh Sundaram , Xin Li , Youssef El Gmili , Paul B Voss et al.
Applied Physics Letters, 2016, 108 (17), pp.171106. ⟨10.1063/1.4948260⟩
Journal articles hal-02385100v1
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Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems

Yacine Halfaya , Chris Bishop , Ali Soltani , Sundaram Suresh , Vincent Aubry et al.
Sensors, 2016, 16, pp.273. ⟨10.3390/s16030273⟩
Journal articles hal-01277595v1

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

S. Sundaram , X Li , Y. El Gmili , P Bonanno , R Puybaret et al.
Nanotechnology, 2016, 27 (11), pp.115602. ⟨10.1088/0957-4484/27/11/115602⟩
Journal articles hal-02277942v1
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Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE

J. Laifi , N. Chaaben , H. Bouazizi , Najla Fourati , C. Zerrouki et al.
Superlattices and Microstructures, 2016, 94, pp.30-38. ⟨10.1016/j.spmi.2016.02.037⟩
Journal articles hal-01277597v1
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Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Renaud Puybaret , Gilles Patriarche , Matthew B. Jordan , Suresh Sundaram , Youssef El Gmili et al.
Applied Physics Letters, 2016, 108 (10), pp.103105. ⟨10.1063/1.4943205⟩
Journal articles hal-01220089v1
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Role of V-pits in the performance improvement of InGaN solar cells

Muhammad Arif , Jean-Paul Salvestrini , Jérémy Streque , Matthew B. Jordan , Youssef El Gmili et al.
Applied Physics Letters, 2016, 109 (13), pp.133507. ⟨10.1063/1.4963817⟩
Journal articles hal-02385085v1

High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells

Walid El-Huni , Anne Migan-Dubois , Zakaria Djebbour , Jean-Paul Salvestrini , Abdallah Ougazzaden et al.
Progress in Photovoltaics, 2016, 24 (11), pp.1436 - 1447. ⟨10.1002/pip.2807⟩
Journal articles hal-01420488v1

Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree

Houda Bouazizi , Noureddine Chaaben , Youssef El Gmili , Amor Bchetnia , Jean-Paul Salvestrini et al.
Journal of Crystal Growth, 2016, 434, pp.72-76. ⟨10.1016/j.jcrysgro.2015.10.035⟩
Journal articles hal-01256993v1

Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells

Rabeb Belghouthi , Jean-Paul Salvestrini , Mohamed Hichem Gazzeh , Christyves Chevallier
Superlattices and Microstructures, 2016, 100, pp.168 - 178. ⟨10.1016/j.spmi.2016.09.016⟩
Journal articles hal-01521110v1
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Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Chris Bishop , Yacine Halfaya , Ali Soltani , Suresh Sundaram , Xin Li et al.
IEEE Sensors Journal, 2016, 16 (18), pp.6828-6838. ⟨10.1109/JSEN.2016.2593050⟩
Journal articles hal-02385234v1

High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

Sundaram Suresh , Renaud Puybaret , Xin Li , Youssef El Gmili , Jérémy Streque et al.
physica status solidi (a), 2015, 212 (4), pp.740-744. ⟨10.1002/pssa.201400278⟩
Journal articles hal-01170562v1
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Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

Sofiane Belhasene , Noor Alhuda Al Saqri , Dler Jameel , Abdelmadjid Mesli , Anthony Martinez et al.
Electronics, 2015, 4 (4), pp.1090-1100. ⟨10.3390/electronics4041090⟩
Journal articles hal-01257014v1
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BAlN thin layers for deep UV applications

Xin Li , Suresh Sundaram , Youssef El Gmili , Tarik Moudakir , Frédéric Genty et al.
physica status solidi (a), 2015, 212 (4), pp.745-750. ⟨10.1002/pssa.201400199⟩
Journal articles hal-01108100v1
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Model of Ni-63 battery with realistic PIN structure

Charles Munson , Muhammad Arif , Jeremy Streque , Belahsene Sofiane , Anthony Martinez et al.
Journal of Applied Physics, 2015, 118 (10), pp.105101. ⟨10.1063/1.4930870⟩
Journal articles hal-01203762v1

Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (001)

Jihed Laifi , Noureddine Chaaben , Houda Bouazizi , Najla Fourati , C. Zerrouki et al.
Superlattices and Microstructures, 2015, 86, pp.472-482. ⟨10.1016/j.spmi.2015.08.015⟩
Journal articles hal-01203774v1
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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Xin Li , G. Le Gac , Sophie Bouchoule , Youssef El-Gmili , G. Patriarche et al.
Journal of Crystal Growth, 2015, 432, pp.37-44. ⟨10.1016/j.jcrysgro.2015.09.013⟩
Journal articles hal-01212591v1
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Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors

Chris Bishop , Jean-Paul Salvestrini , Yacine Halfaya , Sundaram Suresh , Youssef El Gmili et al.
Applied Physics Letters, 2015, 106 (24), pp.243504. ⟨10.1063/1.4922803⟩
Journal articles hal-01170536v1
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Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Suresh Sundaram , Youssef El Gmili , Renaud Puybaret , Li X. , P.L. Bonanno et al.
Applied Physics Letters, 2015, 107 (113105), ⟨10.1063/1.4931132⟩
Journal articles hal-01203766v1
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AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

Xiaogai Li , S Sundaram , Pierre Disseix , G Le Gac , S Bouchoule et al.
Optical Materials Express, 2015, 5 (2), pp.381-392. ⟨10.1364/OME.5.000380⟩
Journal articles hal-01108085v1
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MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Xin Li , Suresh Sundaram , Youssef El-Gmili , Frédéric Genty , Sophie Bouchoüle et al.
Journal of Crystal Growth, 2015, 414, pp.119-122. ⟨10.1016/j.jcrysgro.2014.09.030⟩
Journal articles hal-01212596v1
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Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Suresh Sundaram , Renaud Puybaret , Xin Li , Youssef El Gmili , Konstantinos Pantzas et al.
Journal of Applied Physics, 2014, 116 (16), pp.163105-163105-6. ⟨10.1063/1.4900531⟩
Journal articles hal-01077688v1
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Bandgap energy bowing parameter of strained and relaxed InGaN layers,

Gaëlle Orsal , Youssef El Gmili , Nicolas Fressengeas , Jérémy Streque , Ryad Djerboub et al.
Optical Materials Express, 2014, 4 (5), pp.1030-1041. ⟨10.1364/OME.4.001030⟩
Journal articles hal-01170545v1

Calculation of the dispersion of the electro-optical and second harmonic coefficients from the refractive index dispersion

Marc D. Fontana , Mustapha Abarkan , Jean-Paul Salvestrini
Optical Materials, 2014, 36 (4), pp.764-768. ⟨10.1016/j.optmat.2013.11.020⟩
Journal articles hal-01077689v1

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili , G. Orsal , K. Pantzas , A. Ahaitouf , T. Moudakir et al.
Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩
Journal articles hal-00815384v1

Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study

Y. El Gmili , G. Orsal , K. Pantzas , T. Moudakir , S. Sundaran et al.
Acta Materialia, 2013, 61, pp.6587-6596. ⟨10.1016/j.actamat.2013.07.041⟩
Journal articles hal-00845424v1
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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

M. Abid , T. Moudakir , G. Orsal , S. Gautier , A. En Naciri et al.
Applied Physics Letters, 2012, 100 (5), pp.051101. ⟨10.1063/1.3679703⟩
Journal articles hal-00666779v1
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Interface states effects in GaN Schottky diodes

Abdelaziz Ahaitouf , Hussein Srour , Sidi Ould Saad Hamady , Nicolas Fressengeas , Abdallah Ougazzaden et al.
Thin Solid Films, 2012, 522, pp.345-351. ⟨10.1016/j.tsf.2012.08.029⟩
Journal articles hal-00720225v1

Dynamical response function in sodium and aluminum from time-dependent density-functional theory

Marco Cazzaniga , H.-C. Weissker , Simo Huotari , Tuomas Pylkkänen , Jean-Paul Salvestrini et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.075109. ⟨10.1103/PhysRevB.84.075109⟩
Journal articles hal-00696002v1
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Analysis and control of DC drift in LiNbO3-based Mach-Zehnder modulators

Jean-Paul Salvestrini , Laurent Guilbert , Marc Fontana , Mustapha Abarkan , Stéphane Gille et al.
Journal of Lightwave Technology, 2011, 29 (10), pp.1522-1534. ⟨10.1109/JLT.2011.2136322⟩
Journal articles hal-00642162v1

Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

H Srour , Jean-Paul Salvestrini , A Ahaitouf , S Gautier , T Moudakir et al.
Applied Physics Letters, 2011, 99 (22), pp.221101. ⟨10.1063/1.3662974⟩
Journal articles hal-01277006v1
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Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP

Ali Ahaitouf , Abdelaziz Ahaitouf , Jean-Paul Salvestrini , Hussein Srour
Journal of Semiconductors, 2011, 32 (10), pp.104002. ⟨10.1088/1674-4926/32/10/104002⟩
Journal articles hal-00643996v1
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Use of functionalized nanosilica to improve thermo-mechanical properties of epoxy adhesive joint bonding aluminium substrates

C. Sperandio , A. Laachachi , D. Ruch , C. Poilâne , P. Bourson et al.
Journal of Nanoscience and Nanotechnology, 2010, 10 (4), pp.2844-2849. ⟨10.1166/jnn.2010.1458⟩
Journal articles hal-00322143v1

Contribution separators wide margin processing of remote sensing data

A. Khireddine , Jean-Paul Salvestrini
IJCEE - International Journal of Computer and Electrical Engineering, 2010, 2 (4), pp.1793-8163. ⟨10.7763/IJCEE.2010.V2.227⟩
Journal articles hal-00473710v1

Signal processing techniques for the ultrasound characterization of complex materials

A. Khireddine , Jean-Paul Salvestrini
IJCEE - International Journal of Computer and Electrical Engineering, 2009, 1 (5), pp.666-672. ⟨10.7763/IJCEE.2009.V1.103⟩
Journal articles hal-00473709v1
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New versatile and linear optical sensor based on electro-optical modulation and compensation

Rémy Claverie , Jean-Paul Salvestrini , Marc Fontana , Pascal Ney
Review of Scientific Instruments, 2008, 79, pp.123103. ⟨10.1063/1.3036979⟩
Journal articles hal-00302942v1
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Electro-optic and dielectric properties of Hafnium-doped congruent lithium niobate crystals

Mustapha Abarkan , Michel Aillerie , Jean-Paul Salvestrini , Marc D. Fontana , Edvard Kokanyan et al.
Applied Physics B - Laser and Optics, 2008, 92, pp.603-608. ⟨10.1007/s00340-008-3124-1⟩
Journal articles hal-00311729v1
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Frequency and wavelength dependencies of the electro-optic coefficients in SBN:60 single crystal

M. Abarkan , Jean-Paul Salvestrini , M.D. Fontana , Mireille Cuniot-Ponsard
Applied Physics B - Laser and Optics, 2008, 91, pp.489-492. ⟨10.1007/s00340-008-3033-3⟩
Journal articles hal-00322257v1
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Structural and morphological studies of GaN thin films grown on different oriented LiNbO3 substrates by MOVPE

T. Moudakir , G. Orsal , N. Maloufi , A. A. Sirenko , S. Gautier et al.
European Physical Journal: Applied Physics, 2008, 43 (3), pp.295-299. ⟨10.1051/epjap:2008144⟩
Journal articles hal-00181707v1

Structural and morphological studies of GaN thin films grown on different oriented LiNbO 3 substrates by MOVPE

T Moudakir , G Orsal , N Maloufi , Aa Sirenko , S Gautier et al.
European Physical Journal: Applied Physics, 2008, 43 (03), pp.295--299
Journal articles hal-01277015v1

GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE

A. Ougazzaden , T. Moudakir , T. Aggerstam , G. Orsal , Jean-Paul Salvestrini et al.
physica status solidi (c), 2008, 1-3, ⟨10.1002/pssc.200778490⟩
Journal articles hal-00181670v1
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Investigation of LiNbO3 and LiTaO3 single crystals for pyroelectric applications in the wide temperature range

Svetlana L Bravina , Nicholas V Morozovsky , Anna N Morozovska , Stéphane Gille , Jean-Paul Salvestrini et al.
Ferroelectrics, 2007, 353, pp.636-645. ⟨10.1080/00150190701368166⟩
Journal articles hal-00186014v1
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Optical characterization of YCa4O(BO3)3 and Nd:YCa4O(BO3)3 crystals

P. Segonds , B. Boulanger , B. Menaert , Julien Zaccaro , Jean-Paul Salvestrini et al.
Optical Materials, 2007, 29 (8), pp.975-982. ⟨10.1016/j.optmat.2005.11.036⟩
Journal articles hal-00186004v1
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The electro-optic r22 coefficients and acoustic contributions in LiTaO3 crystal

Haitham Saadon , Nicéphore Théofanous , Michel Aillerie , Mustapha Abarkan , Jean-Paul Salvestrini et al.
Journal of Optics A: Pure and Applied Optics, 2006, 8, pp.677-682. ⟨10.1088/1464-4258/8/8/009⟩
Journal articles hal-00186002v1

High frequency response and wavelength dispersion of the linear electro-optic effect in PZN-PT (88/12) single crystal

Jean-Paul Salvestrini , L. Lebrun , M. Abarkan , G. Sebald , M. Wang et al.
Applied Physics B - Laser and Optics, 2005, 80 (4-5), pp.413-417. ⟨10.1007/s00340-005-1755-z⟩
Journal articles hal-00186008v1
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Temperature stability of elastic and piezoelectric properties in LiNbO single crystal

Iwona Franke , Ewa Talik , Krystian Roleder , Katalin Polgár , Jean-Paul Salvestrini et al.
Journal of Physics D: Applied Physics, 2005, 38 (24), pp.4308-4312. ⟨10.1088/0022-3727/38/24/007⟩
Journal articles hal-00186006v1
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Electro-optic, thermo-optic, and dielectric properties of YCOB and Nd:YCOB crystals: comparative study

Mustapha Abarkan , Jean-Paul Salvestrini , Denis Pelenc , Marc Fontana
Journal of the Optical Society of America B, 2005, 22 (2), pp.398-406. ⟨10.1364/JOSAB.22.000398⟩
Journal articles hal-00186010v1
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Comparative study of nonlinear crystals for electro-optic Q-switching of laser resonators

Jean-Paul Salvestrini , Mustapha Abarkan , Marc Fontana
Optical Materials, 2004, 26, pp.449-458. ⟨10.1016/j.optmat.2003.10.009⟩
Journal articles hal-00186026v1
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Complex elastic properties and piezoelectric activity in stoichiometric and congruent LiNbO3 single crystals

Iwona Franke , Jean-Paul Salvestrini , Marc Fontana , Krystian Roleder
Ferroelectrics, 2004, 304 (1), pp.155-158. ⟨10.1080/00150190490457843⟩
Journal articles hal-00186020v1
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Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals

M. Abarkan , Jean-Paul Salvestrini , M. D. Fontana , M. Aillerie
Applied Physics B - Laser and Optics, 2003, 76, pp.765-769. ⟨10.1007/s00340-003-1196-5⟩
Journal articles hal-00186027v1
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Frequency dispersion of electro-optical properties over a wide range by means of time-response analysis

Mustapha Abarkan , Jean-Paul Salvestrini , Michel Aillerie , Marc Fontana
Applied optics, 2003, 42 (13), pp.2346-2353. ⟨10.1364/AO.42.002346⟩
Journal articles hal-00186028v1
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Enhancement of the electro-optical properties in hybrid organic-inorganic crystals by molecular engineering

Jean-Paul Salvestrini , Mustapha Abarkan , Julien Zaccaro , Alain Ibanez
Journal of the Optical Society of America B, 2003, 20 (8), pp.1661-1665. ⟨10.1364/JOSAB.20.001661⟩
Journal articles hal-00186024v1
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Indirect Pockels effect in rubidium hydrogen selenate

Laurent Guilbert , Jean-Paul Salvestrini , Z. Czapla
Journal of the Optical Society of America B, 2000, 17 (12), pp.1980-1985. ⟨10.1364/JOSAB.17.001980⟩
Journal articles hal-00186033v1
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Electric-field frequency dependence of Pockels coefficients in 2-amino-5-nitropyridium dihydrogen phosphate organic–inorganic crystals

Julien Zaccaro , Jean-Paul Salvestrini , A. Ibanez , P. Ney , M. D. Fontana et al.
Journal of the Optical Society of America B, 2000, 17 (3), pp.427-432. ⟨10.1364/JOSAB.17.000427⟩
Journal articles hal-00186035v1
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Birefringence measurements by means of light deflection at domain wal ls in ferroelastic crystals

P. Kolata , L. Guilbert , M.D. Fontana , Jean-Paul Salvestrini , Z. Czapla et al.
Journal of the Optical Society of America B, 2000, 17 (12), pp.1973-1979. ⟨10.1364/JOSAB.17.001973⟩
Journal articles hal-00186030v1
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Combined effects due to phase, intensity and contrast in electrooptic modulation. Application to ferroelectric materials

L. Guilbert , Jean-Paul Salvestrini , H. Hassan , M. D. Fontana
IEEE Journal of Quantum Electronics, 1999, 35 (3), pp.273-280
Journal articles hal-00186038v1
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Electro-optic properties of LiKSO4 and LiK1−x Rbx SO4 crystals

A. Righi , Jean-Paul Salvestrini , P. Bourson , R. L. Moreira , M. D. Fontana et al.
Applied Physics B - Laser and Optics, 1998, 67 (5), pp.559-562. ⟨10.1007/s003400050545⟩
Journal articles hal-00186044v1
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Correlation between dielectric and electrooptic properties related to domains dynamics in RbHSeO crystals

L. Guilbert , Jean-Paul Salvestrini , M. D. Fontana , Z. Czapla
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1998, 58 (5), pp.2523-2528. ⟨10.1103/PhysRevB.58.2523⟩
Journal articles hal-00186045v1
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Optical characteristics of triclinic rubidium hydrogen selenate

L. Guilbert , Jean-Paul Salvestrini , P. Kolata , F. X. Abrial , M. D. Fontana et al.
Journal of the Optical Society of America B, 1998, 15 (3), pp.1009-1016. ⟨10.1364/JOSAB.15.001009⟩
Journal articles hal-00186047v1
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Investigation of electrooptic modulation from organic-inorganic crystals

Jean-Paul Salvestrini , Julien Zaccaro , Alain Ibanez , Marc Fontana
Applied Physics B - Laser and Optics, 1998, 67 (6), pp.761-763. ⟨10.1007/s003400050578⟩
Journal articles hal-00186039v1

Electro-optical and deflection properties of ammonium and rubidium hydrogen selenate crystals - Application to development of a low power Pockels cell

P. Kolata , L. Guilbert , Jean-Paul Salvestrini , M. Aillerie , M.D. Fontana et al.
Annales de Physique, 1998, 23, pp.163-164
Journal articles hal-00186042v1

Comparative measurements of the frequency dependence of the electrooptical and dielectric coefficient in inorganic crystals

Jean-Paul Salvestrini , M. D. Fontana , B. Wyncke , F. Brehat
Nonlinear Optics, 1997, 17, pp.271-280
Journal articles hal-00186051v1
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Electrooptical properties of rubidium hydrogen selenate

Jean-Paul Salvestrini , L. Guilbert , M. D. Fontana , Z. Czapla
Journal of the Optical Society of America B, 1997, 14 (11), pp.2818-2822. ⟨10.1364/JOSAB.14.002818⟩
Journal articles hal-00186050v1
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Electrooptic investigations in ammonium hydrogen selenate (NH4 HSeO4)

Jean-Paul Salvestrini , L. Guilbert , M. D. Fontana , Z. Czapla
Ferroelectrics, 1996, 185 (1), pp.257-260. ⟨10.1080/00150199608210527⟩
Journal articles hal-00186463v1
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New material with strong electro‐optic effect: Rubidium hydrogen selenate (RbHSeO4)

Jean-Paul Salvestrini , Marc D. Fontana , Michel Aillerie , Z. Czapla
Applied Physics Letters, 1994, 64 (15), pp.1920-1922. ⟨10.1063/1.111742⟩
Journal articles hal-00186053v1

Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid component

Chris Bishop , Vincent Aubry , Abdallah Ougazzaden , Jean-Paul Salvestrini , Paul L. Voss et al.
United States, Patent n° : 16341822. III-NITRIDE MATERIALS. 2020
Patents hal-03350688v1

Detection sensor having a sensor cell with a high-electron mobility transistor and ring resonator(s)

Vincent Aubry , Abdallah Ougazzaden , Jean-Paul Salvestrini , Paul Voss , Yacine Halfaya et al.
United States, Patent n° : US 20200278315A1. III-NITRIDE MATERIALS. 2020
Patents hal-03414657v1

Capteur de détection de gaz d'un composant d'un gaz

Laetitia Pradere , Yacine Halfaya , Abdallah Ougazzaden , Paul L Voss , Jean-Paul Salvestrini et al.
France, N° de brevet: FR 1462278 2014. 2015
Patents hal-01281130v1

Capteur Schottky de detection d’un constituant d’un gaz d’echappement

Chris Bishop , Abdallah Ougazzaden , Jean-Paul Salvestrini , P.L. Voss , Laetitia Pradere et al.
France, N° de brevet: FR 1462277 2014. 2014
Patents hal-01281183v1

Capteur thermooptique de temp ́erature utilisant la modulation ́electrique d'un signal optique

M. Aillerie , P. Kolata , Jean-Paul Salvestrini , L. Guilbert , M. D. Fontana et al.
France, N° de brevet: 9609271. 1997
Patents hal-00186275v1

Modulateur ́electrooptique

Jean-Paul Salvestrini , M. D. Fontana
N° de brevet: 95-909822.9. 1995
Patents hal-00186278v1

Dispositif de polarisation et de modulation ́electrooptique de lumiere, utilisant un cristal de faible dimension

Jean-Paul Salvestrini , M. D. Fontana
N° de brevet: 9402015. 1994
Patents hal-00186279v1