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Jérôme saint-martin

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Spectral Simulation of Heat Transfer Across Polytype Interfaces

Nadjib Izitounene , Ngoc Duc Le , Brice Davier , Philippe Dollfus , Lorenzo Paulatto et al.
Crystal Research and Technology, 2022, 57 (9), pp.2200017. ⟨10.1002/crat.202200017⟩
Journal articles hal-03864401v1
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Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation

N. Le , Brice Davier , N. Izitounene , Philippe Dollfus , J. Saint-Martin et al.
Journal of Computational Electronics, 2022, 21 (4), pp.744-755. ⟨10.1007/s10825-022-01885-x⟩
Journal articles hal-03859201v1
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Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Rémi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy et al.
Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩
Journal articles hal-03793952v1
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Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation

Philippe Dollfus , Jérôme Saint-Martin , T. Cazimajou , R. Helleboid , A. Pilotto et al.
Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩
Journal articles hal-03793955v1
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Revisiting thermal conductivity and interface conductance at the nanoscale

Brice Davier , Philippe Dollfus , N.D. Le , S. Volz , J. Shiomi et al.
International Journal of Heat and Mass Transfer, 2022, 183 (Part A), pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
Journal articles hal-03859204v1
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Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Remi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy et al.
IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩
Journal articles hal-03794480v1
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Phonon-assisted transport in van der Waals heterostructure tunnel devices

A. M'Foukh , Jérôme Saint-Martin , Philippe Dollfus , Marco G. Pala
Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩
Journal articles hal-03793956v1
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Revisiting thermal conductivity and interface conductance at the nanoscale

B. Davier , P. Dollfus , N.D. Le , S. Volz , J. Shiomi et al.
International Journal of Heat and Mass Transfer, 2022, 183, Part A, pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩
Journal articles hal-03628712v1
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Electron transport properties of graphene nanoribbons with Gaussian deformation

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus
Physical Review B, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩
Journal articles hal-02935227v1
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High thermoelectric performance of graphite nanofibers

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz
Nanoscale, 2018, 10 (8), pp.3784 - 3791. ⟨10.1039/C7NR07817J⟩
Journal articles hal-01909447v1
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Ab initio based calculations of the thermal conductivity at the micron scale

Laurent Chaput , Jérôme Larroque , Philippe Dollfus , Jérôme Saint-Martin , David Lacroix et al.
Applied Physics Letters, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩
Journal articles hal-01689364v1
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Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation

Brice Davier , Jérôme Larroque , Philippe Dollfus , Laurent Chaput , Sebastian Volz et al.
Journal of Physics: Condensed Matter, inPress, 30 (49), pp.495902. ⟨10.1088/1361-648X/aaea4f⟩
Journal articles hal-01906247v1

High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz
Materials Today: Proceedings, 2018, 4 (4, Part 1), pp.10393-10400. ⟨10.1016/j.matpr.2017.12.287⟩
Journal articles hal-01927617v1
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Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models

Jérôme Larroque , Philippe Dollfus , Jérôme Saint-Martin
Journal of Applied Physics, 2018, 123 (2), ⟨10.1063/1.5007034⟩
Journal articles hal-01906686v1
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Third nearest neighbor parameterized tight binding model for graphene nano-ribbons

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz
AIP Advances, 2017, 7 (7), ⟨10.1063/1.4994771⟩
Journal articles hal-01631290v1

Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors

Vincent Talbo , Jérôme Saint-Martin , Sylvie Galdin-Retailleau , Philippe Dollfus
Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-14009-4⟩
Journal articles hal-01906689v1
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Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz
Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-02230-0⟩
Journal articles hal-01631292v1
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Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons

T. Nghiem , Jérôme Saint-Martin , P. Dollfus
Journal of Computational Electronics, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩
Journal articles hal-01906694v1
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Thermoelectric effects in graphene nanostructures

Philippe Dollfus , Viet Hung Nguyen , Jérôme Saint-Martin
Journal of Physics: Condensed Matter, 2015, 27 (13), ⟨10.1088/0953-8984/27/13/133204⟩
Journal articles hal-01909508v1

Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus
Semiconductor Science and Technology, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩
Journal articles hal-01909498v1

Strain-induced conduction gap in vertical devices made of misoriented graphene layers

V Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , P. Dollfus
Nanotechnology, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩
Journal articles hal-01909504v1

Enhanced Seebeck effect in graphene devices by strain and doping engineering

M. Chung Nguyen , V. Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , P. Dollfus et al.
Physica E: Low-dimensional Systems and Nanostructures, 2015, 73, pp.207 - 212. ⟨10.1016/j.physe.2015.05.020⟩
Journal articles hal-01909501v1

High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus
Nanotechnology, 2015, 26 (49), ⟨10.1088/0957-4484/26/49/495202⟩
Journal articles hal-01909496v1
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Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus
Applied Physics Letters, 2014, 105 (7), ⟨10.1063/1.4893697⟩
Journal articles hal-01910199v1

On the non-linear effects in graphene devices

Viet Hung Nguyen , Alfonso Alarcón , Salim Berrada , Van Nam Do , Jérôme Saint-Martin et al.
Journal of Physics D: Applied Physics, 2014, 47 (9), pp.094007
Journal articles hal-01951903v1
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New insights into self-heating in double-gate transistors by solving Boltzmann transport equations

T. Thu Trang Nghiêm , Jérôme Saint-Martin , P. Dollfus
Journal of Applied Physics, 2014, 116 (7), ⟨10.1063/1.4893646⟩
Journal articles hal-01906713v1

Entre utopie et réalités professionnelles, la Gymnastique Volontaire (GV) en France (1976-1985)

Natalia Bazoge , J. Saint-Martin
Carrefours de l'éducation, 2014, Hors-série « Education nationale – Jeunesse et Sports. Territoires en conflits ? », 3, pp.57-74
Journal articles hal-02063803v1

Enhanced thermoelectric figure of merit in vertical graphene junctions

Viet-Hung Nguyen , Mai Chung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , Philippe Dollfus et al.
Applied Physics Letters, 2014, 105 (13), ⟨10.1063/1.4896915⟩
Journal articles hal-01910202v1

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Salim Berrada , Viet Hung Nguyen , Damien Querlioz , Jérôme Saint-Martin , Alfonso Alarcón et al.
Applied Physics Letters, 2013, 103 (18), pp.183509
Journal articles hal-01951910v1
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Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Ming Shi , Jérôme Saint-Martin , Arnaud Bournel , Damien Querlioz , Nicolas Wichmann et al.
Solid-State Electronics, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩
Journal articles hal-01910206v1

Decoherence effects in the Wigner function formalism

Philipp Schwaha , Damien Querlioz , Philipp Dollfus , Jérôme Saint-Martin , Mihail Nedjalkov et al.
Journal of Computational Electronics, 2013, 12 (3), pp.388-396
Journal articles hal-01951931v1

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Alfonso Alarcón , Viet-Hung Nguyen , Salim Berrada , Damien Querlioz , Jérôme Saint-Martin et al.
IEEE Transactions on Electron Devices, 2013, 60 (3), pp.985-991
Journal articles hal-01951940v1

Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor

Ming Shi , Jérôme Saint-Martin , Arnaud Bournel , Damien Querlioz , Philippe Dollfus et al.
Journal of Nanoscience and Nanotechnology, 2013, 13 (2), pp.771-775
Journal articles hal-01951943v1
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Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Salim Berrada , Viet Hung Nguyen , Damien Querlioz , Jérôme Saint-Martin , Alfonso Alarcón et al.
Applied Physics Letters, 2013, 103 (18), ⟨10.1063/1.4828496⟩
Journal articles hal-01910209v1

Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Viet Hung Nguyen , Jérôme Saint-Martin , Damien Querlioz , Fulvio Mazzamuto , Arnaud Bournel et al.
Journal of Computational Electronics, 2013, 12 (2), pp.85-93
Journal articles hal-01951935v1

Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor

Minghua Shi , J. Saint-Martin , A. Bournel , D. Querlioz , P. Dollfus et al.
Journal of Nanoscience and Nanotechnology, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩
Journal articles hal-00795954v1
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Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons

F. Mazzamuto , V. Hung Nguyen , Y. Apertet , C. Caër , C. Chassat et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (23), ⟨10.1103/PhysRevB.83.235426⟩
Journal articles hal-01909440v1

Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study

Audrey Valentin , F. Mazzamuto , J. Saint-Martin , C. Chassat , P. Dollfus et al.
Journal of Applied Physics, 2011, 109 (6), pp.064516. ⟨10.1063/1.3552293⟩
Journal articles hal-03440047v1

Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology

Vincent Barral , Thierry Poiroux , Jérôme Saint-Martin , Daniela Munteanu , Jean-Luc Autran et al.
IEEE Transactions on Electron Devices, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩
Journal articles hal-01430106v1

Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study

Fulvio Mazzamuto , Jérôme Saint-Martin , Arnaud Bournel , P. Dollfus , Alexandre Archambault et al.
Journal of Physics: Conference Series, 2009, 193 (1), pp.012015. ⟨10.1088/1742-6596/193/1/012015⟩
Journal articles hal-00574368v1

Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxyde semiconductor field effect transistors

K. Huet , D. Querlioz , W. Chaisantikulwat , J. Saint-Martin , A. Bournel et al.
Journal of Applied Physics, 2008, 104 (4), pp.044504-1-7
Journal articles hal-00391733v1
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On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

D. Querlioz , Jérôme Saint-Martin , K. Huet , A. Bournel , V. Aubry-Fortuna et al.
IEEE Transactions on Electron Devices, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩
Journal articles hal-01909433v1

Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation

A. Bournel , V. Aubry-Fortuna , J. Saint-Martin , P. Dollfus
Solid-State Electronics, 2007, 51 (4), pp.543-550. ⟨10.1016/j.sse.2007.02.010⟩
Journal articles hal-02452609v1
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Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas

Jérôme Saint-Martin , A. Bournel , F Monsef , C. Chassat , P. Dollfus et al.
Semiconductor Science and Technology, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩
Journal articles hal-01909484v1

On the Ballistic Transport in Nanometer-Scaled DG MOSFETs

Jérôme Saint-Martin , A. Bournel , P. Dollfus
IEEE Transactions on Electron Devices, 2004, 51 (7), pp.1148 - 1155. ⟨10.1109/TED.2004.829904⟩
Journal articles hal-01909466v1

Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability

Denis Rideau , Y. Oussaiti , J. Grebot , R. Helleboid , A. Lopez et al.
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States
Conference papers hal-03374008v1
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Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability

Marco G. Pala , D. Rideau , Y. Oussaiti , J. Grebot , R. Helleboid et al.
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.293-296, ⟨10.1109/SISPAD54002.2021.9592567⟩
Conference papers hal-03445562v1

Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics

Thibauld Cazimajou , Marco Pala , Jérôme Saint-Martin , Denis Rideau , Philippe Dollfus et al.
21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
Conference papers hal-03254209v1

Spectral simulation of heat transfer across polytype interfaces

N. Izitounene , N. D. Le , B. Davier , P. Dollfus , Lorenzo Paulatto et al.
Fall Meeting of the European Materials Research Society (E-MRS) 2021, Sep 2021, VIRTUAL Conference, Poland
Conference papers hal-03276073v1

Study of the modal contributions to the heat flux to characterize the phonon transport regime in Si/Ge heterojunctions

Ngoc Duc Le , Brice Davier , Philippe Dollfus , Jérôme Saint-Martin
21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
Conference papers hal-03254218v1
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Full Band Monte Carlo simulation of phonon transfer at interfaces

N.D. Le , B. Davier , P. Dollfus , Marco G. Pala , A. Bournel et al.
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩
Conference papers hal-03029928v1

Nanoscale heat transfer via Ab-Initio Monte Carlo simulation

Brice Davier , Jérôme Larroque , Philippe Dollfus , Laurent Chaput , Sebastian Volz et al.
20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States
Conference papers hal-02187168v1

Thermoelectric properties of Quantum Dot-based devices

Vincent Talbo , Jérôme Saint-Martin , Philippe Dollfus
IEEE NANO 2018, Jul 2018, Cork, Ireland
Conference papers hal-01952001v1

Enhanced Seebeck effect in graphene devices by strain and doping engineering

Mai-Chung Nguyen , Viet-Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , Philippe Dollfus et al.
High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
Conference papers hal-01952016v1

Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach

B. Davier , J. Larroque , P. Dollfus , Jérôme Saint-Martin
High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
Conference papers hal-01952013v1

Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures

B. Davier , J. Larroque , Philippe Dollfus , Laurent Chaput , S. Volz et al.
Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
Conference papers hal-01951979v1

Full-Band modelling of phonons in polytype Ge and Si

J. Larroque , P. Dollfus , Jérôme Saint-Martin
20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007
Conference papers hal-01951995v1

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi , J. Saint-Martin , A. Bournel , D. Querlioz , P. Dollfus et al.
37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩
Conference papers hal-00799795v1

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier , Nicolas Wichmann , Jiongjong Mo , Albert M.D. Noudeviwa , Yannick Roelens et al.
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
Conference papers hal-00549921v1

Étude de la mobilité effective dans les DG MOSFET quasi-balistiques

K. Huet , J. Saint-Martin , A. Bournel , G. Ghibaudo , P. Dollfus et al.
xxxx, 2006, Grenoble, France. pp.XX
Conference papers hal-00148265v1
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Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach

D. Querlioz , J. Saint-Martin , V.-N. Do , A. Bournel , P. Dollfus et al.
2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩
Conference papers hal-01827054v1
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Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs

Jérôme Saint-Martin , Damien Querlioz , Arnaud Bournel , Philippe Dollfus
2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩
Conference papers hal-01827057v1
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ETUDE PAR SIMULATION MONTE CARLO D'ARCHITECTURES DE MOSFET ULTRACOURTS A GRILLE MULTIPLE SUR SOI

Jérôme Saint-Martin
Micro et nanotechnologies/Microélectronique. Université Paris Sud - Paris XI, 2005. Français. ⟨NNT : ⟩
Theses tel-00011335v1