Karine Tavernier
- Institut des Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
- Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
Publications
Publications
Transverse orientation patterned gallium phosphide waveguidesIntegrated Photonics Research, Silicon and Nanophotonics, 2025, Marseille, France. pp.ITu1B.3, ⟨10.1364/IPRSN.2025.ITu1B.3⟩ |
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Second harmonic generation in polycrystalline Zinc Sulfide nanowaveguidesIntegrated Photonics Research, Silicon and Nanophotonics, 2025, Marseille, France. pp.ITu2A.3, ⟨10.1364/IPRSN.2025.ITu2A.3⟩ |
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Transverse Orientation Patterned Gallium Phosphide waveguides for high efficiency second harmonic generationCLEO®/Europe-EQEC 2025, Jun 2025, Munich, Germany |
Massive onset potential shifting with an epitaxial GaAs/Si photocathode for solar H2 production245th Electrochemical Society (ECS) meeting, May 2024, San Fransisco, United States. ⟨10.1149/MA2024-01442458mtgabs⟩ |
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Origine du twist entre les îlots de croissance de semi-conducteurs tétra-coordonnés hétéroépitaxiés selon des directions hexagonales.Conférence MATEPI 2023, Jul 2023, Paris, France |
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MBE-grown GaAs on a low-cost Si substrate for solar hydrogen productionEMRS Fall Meeting 2022, European Materials Research Society, Sep 2022, Warsaw, Poland |
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Liquid Crystal based Tunable Photonic Devices for Emission or Detection around 1.55 μm2021 International Meet & Expo on Laser, Optics and Photonics (OPTICSMEET 2021), Nov 2021, Nice, France |
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33 nm wavelength tuning of a 1550 nm VCSEL in CW operation based on the liquid crystal micro-cells technologyInternational Semiconductor Laser Conference (ISLC 2021), Oct 2021, Postdam, Germany. ⟨10.1109/ISLC51662.2021.9615666⟩ |
Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico |
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23.5 nm wavelength tuning of a 1550 nm VCSEL in CW operation based on the liquid crystal micro-cells technologyEuropean Semiconductor Laser Workshop (ESLW 2020), Dec 2020, Eindhoven (virtual), Netherlands |
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Random crystal polarity of Gallium phosphide microdisks on siliconJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France |
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1545 nm Quantum Dot Vertical Cavity Surface Emitting Laser with low thresholdCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France |
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States |
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Hot Carrier Solar Cell: From Simulation to Devices27th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2012), Sep 2012, Frankfurt, Germany. pp.89, ⟨10.4229/27thEUPVSEC2012-1BO.9.4⟩ |
10.6 GHz InAs/InP quantum dash two-section passively mode-locked lasers in L band.Journées Boîtes Quantiques - Quantum Dots France, Jun 2011, Toulouse, France |
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Caractérisation d'un dépôt multicouches diélectriques par pulvérisation cathodique - application à la réalisation de lasers monomodes à nanostructures quantiques29è Journées Nationales d'Optique Guidée (JNOG 2010), Oct 2010, Besançon, France |
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Lasers à boites quantiques sur InP pour les applications télécom à 1,55 µmSéminaire PONANT 2010, Jul 2010, Rennes, France |
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11 |
Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaPINNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1 |
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Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrateIPRM, Indium Phosphide & Related Materials, May 2009, Newportbeach, United States. pp.41 - 44, ⟨10.1109/ICIPRM.2009.5012422⟩ |
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Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers9th International Conference Trends in Nanotechnology (TNT 2008), Sep 2008, Oviedo, Spain. pp.2217 - 2221, ⟨10.1002/pssc.200881729⟩ |
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Asymmetric Stark Shift in InAs/GaAsP(Q1.18) quantum dots grown on (311)B InP substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France |
Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩ |
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Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current densitySQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1 |
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Dynamic Properties of InAs/InP (311)B Quantum Dot Lasers Emitting at 1.52 μm,The International Semiconductor Laser Conference, Sep 2008, Italy |
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Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μmIndium Phosphide and Related Materials, IPRM, May 2008, Versailles, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4703027⟩ |
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1.55 µm room-temperature continuous wave operation of InAs/InP (100) quantum dash ridge lasersSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1 |
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Comparative study of Single- and Double-capped InAs/InP (311)B QD lasers: effects on lasing characteristicsLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1 |
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InAs/InP quantum dot laser grown on (113)B InP substrateLWQD : International workshop on long wavelength quantum dots : Growth and applications, Jul 2007, Rennes, France |
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Ultra-low threshold current density 1.55 µm InAs quantum dot lasers grown on InPInternational Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), 2006, Paris, France |
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Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layerLEOS 2006 (Lasers & Eloctro-Optics Society), Oct 2006, Montreal, Canada. pp.870-71, ⟨10.1109/LEOS.2006.279083⟩ |
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Influence of the number of quantum dots stacks on the threshold current density of 1.55 µm InAs/InP(311)B semiconductor lasersESLW 2006 (European Semiconductor Laser Workshop), Sep 2006, Nice, France. pp.1 |
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Recent progress in QD broad area lasersePIXnet annual meeting, Sep 2006, Lausanne, Switzerland |
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Photocurrent spectroscopy of self assembled InAs/GaInAsP/InP(113)B quantum dotsGDR Nanoélectronique Journées Scientifiques, Jan 2003, Grenoble, France |