KT
Karine Tavernier
65
Documents
Affiliations actuelles
- Institut des Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
- Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
Publications
Publications
Transverse Orientation Patterned Gallium Phosphide waveguides for high efficiency second harmonic generationCLEO®/Europe-EQEC 2025, Jun 2025, Munich, Germany
Communication dans un congrès
hal-05223399
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Massive onset potential shifting with an epitaxial GaAs/Si photocathode for solar H2 production245th Electrochemical Society (ECS) meeting, May 2024, San Fransisco, United States. ⟨10.1149/MA2024-01442458mtgabs⟩
Communication dans un congrès
hal-04745375
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Origine du twist entre les îlots de croissance de semi-conducteurs tétra-coordonnés hétéroépitaxiés selon des directions hexagonales.Conférence MATEPI 2023, Jul 2023, Paris, France
Communication dans un congrès
hal-04225165
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MBE-grown GaAs on a low-cost Si substrate for solar hydrogen productionEMRS Fall Meeting 2022, European Materials Research Society, Sep 2022, Warsaw, Poland
Communication dans un congrès
hal-03967984
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Liquid Crystal based Tunable Photonic Devices for Emission or Detection around 1.55 μm2021 International Meet & Expo on Laser, Optics and Photonics (OPTICSMEET 2021), Nov 2021, Nice, France
Communication dans un congrès
hal-03413152
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33 nm wavelength tuning of a 1550 nm VCSEL in CW operation based on the liquid crystal micro-cells technologyInternational Semiconductor Laser Conference (ISLC 2021), Oct 2021, Postdam, Germany. ⟨10.1109/ISLC51662.2021.9615666⟩
Communication dans un congrès
hal-03413099
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Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03402689
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23.5 nm wavelength tuning of a 1550 nm VCSEL in CW operation based on the liquid crystal micro-cells technologyEuropean Semiconductor Laser Workshop (ESLW 2020), Dec 2020, Eindhoven (virtual), Netherlands
Communication dans un congrès
hal-03060079
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Random crystal polarity of Gallium phosphide microdisks on siliconJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France
Communication dans un congrès
hal-03101371
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1545 nm Quantum Dot Vertical Cavity Surface Emitting Laser with low thresholdCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France
Communication dans un congrès
hal-02290603
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Communication dans un congrès
hal-01147506
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Hot Carrier Solar Cell: From Simulation to Devices27th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2012), Sep 2012, Frankfurt, Germany. pp.89, ⟨10.4229/27thEUPVSEC2012-1BO.9.4⟩
Communication dans un congrès
hal-00842742
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10.6 GHz InAs/InP quantum dash two-section passively mode-locked lasers in L band.Journées Boîtes Quantiques - Quantum Dots France, Jun 2011, Toulouse, France
Communication dans un congrès
hal-00662957
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Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaPINNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1
Communication dans un congrès
hal-00504484
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506
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Lasers à boites quantiques sur InP pour les applications télécom à 1,55 µmSéminaire PONANT 2010, Jul 2010, Rennes, France
Communication dans un congrès
hal-00662947
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Caractérisation d'un dépôt multicouches diélectriques par pulvérisation cathodique - application à la réalisation de lasers monomodes à nanostructures quantiques29è Journées Nationales d'Optique Guidée (JNOG 2010), Oct 2010, Besançon, France
Communication dans un congrès
hal-00589348
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Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrateIPRM, Indium Phosphide & Related Materials, May 2009, Newportbeach, United States. pp.41 - 44, ⟨10.1109/ICIPRM.2009.5012422⟩
Communication dans un congrès
hal-00485799
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Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers9th International Conference Trends in Nanotechnology (TNT 2008), Sep 2008, Oviedo, Spain. pp.2217 - 2221, ⟨10.1002/pssc.200881729⟩
Communication dans un congrès
istex
hal-00492826
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩
Communication dans un congrès
hal-00501639
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Asymmetric Stark Shift in InAs/GaAsP(Q1.18) quantum dots grown on (311)B InP substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France
Communication dans un congrès
hal-00490418
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Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current densitySQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00494175
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Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μmIndium Phosphide and Related Materials, IPRM, May 2008, Versailles, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4703027⟩
Communication dans un congrès
hal-00492842
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Dynamic Properties of InAs/InP (311)B Quantum Dot Lasers Emitting at 1.52 μm,The International Semiconductor Laser Conference, Sep 2008, Italy
Communication dans un congrès
hal-00536762
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1.55 µm room-temperature continuous wave operation of InAs/InP (100) quantum dash ridge lasersSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00494186
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InAs/InP quantum dot laser grown on (113)B InP substrateLWQD : International workshop on long wavelength quantum dots : Growth and applications, Jul 2007, Rennes, France
Communication dans un congrès
hal-00486908
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Comparative study of Single- and Double-capped InAs/InP (311)B QD lasers: effects on lasing characteristicsLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1
Communication dans un congrès
hal-00491814
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Ultra-low threshold current density 1.55 µm InAs quantum dot lasers grown on InPInternational Workshop on Semiconductor Quantum Dot based Devices and Applications (IWSQDA), 2006, Paris, France
Communication dans un congrès
hal-00485693
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Recent progress in QD broad area lasersePIXnet annual meeting, Sep 2006, Lausanne, Switzerland
Communication dans un congrès
hal-00491803
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Influence of the number of quantum dots stacks on the threshold current density of 1.55 µm InAs/InP(311)B semiconductor lasersESLW 2006 (European Semiconductor Laser Workshop), Sep 2006, Nice, France. pp.1
Communication dans un congrès
hal-00491806
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Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layerLEOS 2006 (Lasers & Eloctro-Optics Society), Oct 2006, Montreal, Canada. pp.870-71, ⟨10.1109/LEOS.2006.279083⟩
Communication dans un congrès
hal-00491812
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Photocurrent spectroscopy of self assembled InAs/GaInAsP/InP(113)B quantum dotsGDR Nanoélectronique Journées Scientifiques, Jan 2003, Grenoble, France
Communication dans un congrès
hal-00727159
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