Konstantinos Zekentes
Publications
Publications
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Fabrication of planar nanostructured SiC microelectrode arrays for longlifetime neural interfacesMNE 2025 - 51st International Micro and Nano Engineering Conference, Sep 2025, Southamptom, United Kingdom |
Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devicesWOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece |
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Hydrogel based functionalization of SiC films for new hybrid neural InterfacesE‐MRS Spring Meeting, May 2024, Strasbourg, France |
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Composition and structure determination of PECVD amorphous silicon carbide : techniques, synergies, and optimizationWorkshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), May 2024, Heraklion, Greece |
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New SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensingEUROSENSORS XXXV, Sep 2023, Lecce, Italy |
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Comparing Monocrystalline SiC N-P-N Epitaxial and Implanted Junctions for Isolation in Neural Interfaces47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) & 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (-EXMATEC 2024), May 2023, Palermo, Italy |
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One-step fabrication of submicron/nanowires from SOI substrates by optimized proximity UV lithography48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), Sep 2022, Louvain, Belgium |
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SiC:H Characterization Towards Optimal MEA Neural Interface Passivation45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal |
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Fabrication of new SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensingDeuxièmes Rencontres Capteurs de l’Université Bourgogne Franche-Comté (RCUBFC), Nov 2022, Dijon, France |
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A novel process to realize 4H-SiC nanowire arraysMNE 2019, Sep 2019, Rhodes, Greece |
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4H-SiC Nanowire arrays formation by nanoimprint lithography, plasma etching and sacrificial oxidationWocSdice 2019, Jun 2019, Cabourg, France |
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Cross-section doping topography of 4H-SiC VJFETs by various techniquesInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington, DC, United States. ⟨10.4028/www.scientific.net/MSF.924.653⟩ |
Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs)40th International Semiconductor Conference (CAS 2017), Oct 2017, Sinaia, Romania |
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩ |
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SiC Nanowire Field-Effect-Transistors13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct 2016, Rome, Italy |
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Top-down 3C-SiC NWFETs40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal |
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capacitances in 4H-SiC TI-VJFETs11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece |
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Modelling of 4H-SiC VJFETs with Self-Aligned Contacts16th International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Catane, Italy. pp.913-916 |
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Salicide-like process for the formation of gate and source contacts in 4H-SiC TI-VJFETS11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece |
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Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy |
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4H-SiC VJFETs with Self-Aligned ContactsECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75 |
Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC14th International Conference on Silicon Carbide and Related Materials 2011, Sep 2011, Cleveland, United States. pp.589-592 |
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Schottky barrier 3C-SiC nanowire field effect transistor ECSCRMEuropean Conference on Silicon Carbide and Related, 2010, Oslo, Norway. pp.613-616 |
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Electrical transport properties of catalyst-free grown 3C-SiC nanowiresInternational workshop on 3C-SiC hetero-epitaxy (Hetero-SiC '09), May 2009, Catania, Italy |
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Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin DiodesEuropean Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912 |
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Photoemission of 4H-SiC pin diodes epitaxied by the sublimation methodInternational Conf. on SiC and Related Materials ICSCRM'05, 2006, France. pp.391-394 |
Transistor à effet de champ à jonction et procédé de fabrication associéFrance, N° de brevet: Transistor à effet de champ à jonction et procédé de fabrication associé ; PCT/EP2024/075138. CMNE. 2024 |
Optimizing a-SiC Film Chemical Resistance for Long-Lifetime All-SiC Neural InterfacesE-MRS Spring, May 2024, Strasbourg, France |
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Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer LayersRéunion de printemps du club Microcapteurs chimiques (CMC2), Mar 2024, Grenoble, France |
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Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer LayersGrenoble Neurotech School 2024, Apr 2024, Aussois, France |
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Comparing 4H-SiC NPN Buffer Layers by Epitaxy and Implantation for Neural Interface Isolation20th International Conference on Silicon Carbide and Related Materials (ICSCRM), Sep 2023, Sorrento, Italy |
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An open gate 4H-SiC junction field effect transistor for pH sensing19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland |
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Growth of polycrystalline SiC thin films by chemical vapor deposition for brain implanted electrodesICSCRM2022, Sep 2022, Davos (Suisse), Switzerland |
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Optimizing Neural Interface Passivation with PECVD a-SiC:H FilmsICSCRM 2022, Sep 2022, Davos, Switzerland. |
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Modelling and development of 4H-SiC nanowire/nanoribbon biosensing FET structuresEuropean Conference on Silicon Carbide and Related Materials (ECSCRM, Oct 2021, Tours, France |
4H-SiC p-Type Doping Determination from Secondary Electrons Imaging12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham (UK), United Kingdom. Materials Science Forum, 963, Trans Tech Publications Inc., pp.328-331, 2019, ⟨10.4028/www.scientific.net/MSF.963.328⟩ |