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Konstantinos Zekentes

65
Documents
Current affiliations
  • IMEP-LAHC

Publications

Hydrogel based functionalization of SiC films for new hybrid neural Interfaces

Scott Greenhorn , Rachel Auzély-Velty , C Verdier , Matthieu Weber , Isabelle Gélard
E‐MRS Spring Meeting, May 2024, Strasbourg, France
Conference papers hal-04756566v1

Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devices

Michalis Gavalas , Frédéric Mercier , E. Blanquet , Konstantinos Zekentes
WOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece
Conference papers hal-04819565v1

Composition and structure determination of PECVD amorphous silicon carbide : techniques, synergies, and optimization

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), May 2024, Heraklion, Greece
Conference papers hal-04756539v1

New SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing

Olfa Karker , Konstantinos Zekentes , N Makris , Edwige Bano , Valerie Stambouli
EUROSENSORS XXXV, Sep 2023, Lecce, Italy
Conference papers hal-04756508v1

Comparing Monocrystalline SiC N-P-N Epitaxial and Implanted Junctions for Isolation in Neural Interfaces

Scott Greenhorn , Gwenaelle Pound-Lana , Jumana Boussey , Edwige Bano , Valerie Stambouli
47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) & 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (-EXMATEC 2024), May 2023, Palermo, Italy
Conference papers hal-04756589v1

One-step fabrication of submicron/nanowires from SOI substrates by optimized proximity UV lithography

Olfa Karker , Konstantinos Zekentes , Aude Bouchard , Isabelle Gélard , Valerie Stambouli
48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), Sep 2022, Louvain, Belgium
Conference papers hal-04756650v1

Fabrication of new SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing

Olfa Karker , Konstantinos Zekentes , Nikolaos Makris , Edwige Bano , Valerie Stambouli
Deuxièmes Rencontres Capteurs de l’Université Bourgogne Franche-Comté (RCUBFC), Nov 2022, Dijon, France
Conference papers hal-04706478v1

SiC:H Characterization Towards Optimal MEA Neural Interface Passivation

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Andrei Uvarov
45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
Conference papers hal-04756667v1

A novel process to realize 4H-SiC nanowire arrays

Maria Androulidaki , Maximilien Cottat , Antonios Stavrinidis , Cécile Gourgon , Camille Petit-Etienne
MNE 2019, Sep 2019, Rhodes, Greece
Conference papers hal-02344211v1

4H-SiC Nanowire arrays formation by nanoimprint lithography, plasma etching and sacrificial oxidation

Maximilien Cottat , Antonios Stavrinidis , Cécile Gourgon , Camille Petit-Etienne , Maria Androulidaki
WocSdice 2019, Jun 2019, Cabourg, France
Conference papers hal-02344210v1
Image document

Cross-section doping topography of 4H-SiC VJFETs by various techniques

K. Tsagaraki , Maher Nafouti , H. Peyre , K Vamvoukakis , N Makris
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington, DC, United States. ⟨10.4028/www.scientific.net/MSF.924.653⟩
Conference papers hal-01698971v1

Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs)

Konstantinos Zekentes , Edwige Bano
40th International Semiconductor Conference (CAS 2017), Oct 2017, Sinaia, Romania
Conference papers hal-01698966v1

SiC Nanowire Field-Effect-Transistors

Konstantinos Zekentes , Edwige Bano
13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct 2016, Rome, Italy
Conference papers hal-01698953v1

Salicide-like process for the formation of gate and source contacts in 4H-SiC TI-VJFETS

A. Stavrinidis , George Konstantinidis , K. Vamvoukakis , K. Zekentes
11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Conference papers hal-02066431v1

Top-down 3C-SiC NWFETs

Jihoon Choi , Edwige Bano , Anne Henry , Giovanni Attolini , Konstantinos Zekentes
40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal
Conference papers hal-01698956v1

capacitances in 4H-SiC TI-VJFETs

M. Kayambaki , A. Stavrinidis , George Konstantinidis , K. Zekentes
11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Conference papers hal-02066426v1

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Sylvie Contreras , Leszek Konczewicz , Pawel Kwasnicki , Roxana Arvinte , Herve Peyre
16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩
Conference papers hal-01936580v1

Modelling of 4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Konstantin Vassilevski , Antonis Stavrinidis , Konstantin Konstantinidis , Maria Kayambaki
16th International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Catane, Italy. pp.913-916
Conference papers hal-02025247v1

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Ji Hoon Choi , Edwige Bano , Anne Henry , Giovanni Attolini , Konstantinos Zekentes
16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Conference papers hal-02008440v1
Image document

4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Conference papers hal-02133681v1

Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC

Konstantinos Zekentes , Katerina Tsagaraki , Maria Androulidaki , Maria Kayambaki , Antonis Stavrinidis
14th International Conference on Silicon Carbide and Related Materials 2011, Sep 2011, Cleveland, United States. pp.589-592
Conference papers hal-02025470v1

Schottky barrier 3C-SiC nanowire field effect transistor ECSCRM

K. Rogdakis , Edwige Bano , Laurent Montès , Mikhael Bechelany , D. Cornu
European Conference on Silicon Carbide and Related, 2010, Oslo, Norway. pp.613-616
Conference papers hal-00604274v1

Electrical transport properties of catalyst-free grown 3C-SiC nanowires

K. Rogdakis , Edwige Bano , L. Montes , K. Zekentes , Mikhael Bechelany
International workshop on 3C-SiC hetero-epitaxy (Hetero-SiC '09), May 2009, Catania, Italy
Conference papers hal-00603791v1

Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method

Nicolas Camara , K. Zekentes , Edwige Bano , Aurélie Thuaire , A. Lebedev
International Conf. on SiC and Related Materials ICSCRM'05, 2006, France. pp.391-394
Conference papers hal-00146595v1

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Aurélie Thuaire , Michel Mermoux , Edwige Bano , Alexandre Crisci , Francis Baillet
European Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912
Conference papers hal-00149053v1
Image document

Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation

Scott Greenhorn , Valérie Stambouli , Edwige Bano , Konstantinos Zekentes
Solid State Phenomena, 2024, 358, pp.31-35. ⟨10.4028/p-jqCtr5⟩
Journal articles hal-04743362v1
Image document

Amorphous SiC thin films deposited by PECVD for Passivation in Biomedical Devices

Scott Greenhorn , Edwige Bano , Valérie Stambouli , Konstantinos Zekentes
Materials, 2024, 17 (5), pp.1135. ⟨10.3390/ma17051135⟩
Journal articles hal-04778567v1
Image document

Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications

Olfa Karker , Konstantinos Zekentes , Nikolaos Makris , Valerie Stambouli , Edwige Bano
Key Engineering Materials, 2023, 946, pp.111-118. ⟨10.4028/p-03m3ss⟩
Journal articles hal-04272243v1
Image document

Optimizing PECVD a-SiC:H Films for Neural Interface Passivation

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Andrei Uvarov
Key Engineering Materials, 2023, 947, pp.83-88. ⟨10.4028/p-762f40⟩
Journal articles hal-04272217v1
Image document

Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures

Olfa Karker , Konstantinos Zekentes , Aude Bouchard , Isabelle Gélard , Xavier Mescot
Materials Science Forum, 2022, 1062, pp.608-612. ⟨10.4028/p-23d7ab⟩
Journal articles hal-04272260v1
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Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications

Konstantinos Zekentes , Jihoon Choi , Edwige Bano , Valérie Stambouli , Konstantinos Rogdakis
Microelectronic Engineering, 2022, 255, pp.111704. ⟨10.1016/j.mee.2021.111704⟩
Journal articles hal-03860512v1

A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime

Nikolaos Makris , Maria Kayambaki , Antonis Stavrinidis , George Konstantinidis , Konstantinos Zekentes
Materials Science Forum, 2018, 924, pp.649-652. ⟨10.4028/www.scientific.net/MSF.924.649⟩
Journal articles hal-02008590v1

On the Optimum Determination and Use of SiC VJFET Threshold Voltage

Maria Kayambaki , Nikolaos Makris , Antonis Stavrinidis , George Konstantinidis , Konstantinos Zekentes
Materials Science Forum, 2018, 924, pp.657-660. ⟨10.4028/www.scientific.net/MSF.924.657⟩
Journal articles hal-02008578v1

Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs

Antonis Stavrinidis , George Konstantinidis , Konstantinos Vamvoukakis , Konstantinos Zekentes
Materials Science Forum, 2017, 897, pp.407-410. ⟨10.4028/www.scientific.net/MSF.897.407⟩
Journal articles hal-02066408v1
Image document

Channel width effect on the operation of 4H-SiC vertical JFETs

K Vamvoukakis , D Stefanakis , A Stavrinidis , K Vassilevski , G Konstantinidis
Physica Status Solidi A (applications and materials science), 2017
Journal articles hal-01705998v1

High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs

K. Vamvoukakis , A. Stavrinidis , D. Stefanakis , G. Konstantinidis , M. Kayambaki
E3S Web of Conferences, 2017, 16, pp.12001
Journal articles hal-02008624v1

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Ji Hoon Choi , Edwige Bano , Anne Henry , Giovanni Attolini , Konstantinos Zekentes
Materials Science Forum, 2016, 858, pp.1001-1005. ⟨10.4028/www.scientific.net/MSF.858.1001⟩
Journal articles hal-02006603v1
Image document

4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantin Vamvoukakis
Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩
Journal articles hal-01391852v1

Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs

Konstantinos Rogdakis , Edwige Bano , Laurent Montès , Mikhael Bechelany , David Cornu
IEEE Transactions on Nanotechnology, 2011, 10 (5), pp.980 - 984. ⟨10.1109/TNANO.2010.2091147⟩
Journal articles hal-01695785v1
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SiC nanowires: material and devices

K. Zekentes , K Rogdakis
Journal of Physics D: Applied Physics, 2011, 44 (13), pp.133001. ⟨10.1088/0022-3727/44/13/133001⟩
Journal articles hal-00606295v1

Si nanowire p-FET with asymmetric source-drain I-V characteristics

L. Sang-Kwon , L. Seung-Yong , K. Rogdakis , J. Chan-Oh , K. Dong-Joo
Solid State Communications, 2009, 24 (12), pp.461-463
Journal articles hal-00596152v1

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

K. Rogdakis , S. Poli , Edwige Bano , K. Zekentes , M. G. Pala
Nanotechnology, 2009, 20 (29), pp.295202
Journal articles hal-00596134v1

Microwave modulators based on 4H-SiC p-i-n diodes

K. Zekentes , Nicolas Camara , V.V. Basanets , M.S. Boltovets , V. Krivutsa
IEEE Transactions on Microwave Theory and Techniques, 2008
Journal articles hal-00391484v1

Fabrication of Ion-implanted Si Nanowire p-FETs

S.Y. Lee , C.O. Jang , K. Dong-Joo , H. Jung-Hwan , K. Rogdakis
Journal of Physical Chemistry C, 2008, 112, pp.13287-13291
Journal articles hal-00392664v1

3C-Silicon Carbide nanowire FET: An experimental and theoretical Approach,

K. Rogdakis , S.Y. Lee , M. Bescond , S.K. Lee , Edwige Bano
IEEE Transactions on Electron Devices, 2008, 55 (8), pp.1970-1976
Journal articles hal-00392653v1

Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes

K. Rogadakis , M. Bescond , Edwige Bano , K. Zekentes
Nanotechnology, 2007, 18, pp.475715-475720. ⟨10.1088/0957-4484/18/47/475715⟩
Journal articles hal-00353870v1

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Aurélie Thuaire , Michel Mermoux , Edwige Bano , Alexandre Crisci , Francis Baillet
Materials Science Forum, 2007, 556-557, pp. 909-912. ⟨10.4028/3-908453-69-0.909⟩
Journal articles hal-00386384v1

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Aurélie Thuaire , Michel Mermoux , Edwige Bano , Alexandre Crisci , Francis Baillet
Mat. Sci. Forum, 2007, 556-557, pp.909-912
Journal articles hal-00393087v1

Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching

Nicolas Camara , Aurélie Thuaire , Edwige Bano , K. Zekentes
European Conf. on SiC and Related Materials, ECSCRM'04, 2005, 483-485, pp.773-776
Journal articles hal-00146143v1

Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching

Nicolas Camara , Aurélie Thuaire , Edwige Bano , K. Zekentes
Physica Status Solidi, 2005, a, pp.1-5
Journal articles hal-00145183v1

Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method

Nicolas Camara , K. Zekentes , Edwige Bano , Aurélie Thuaire , A. Lebedev
International Conf. on SiC and Related Materials ICSCRM'05, 2005, XX, pp.XX
Journal articles hal-00146148v1
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Oscillator strength of the E1HH1 excitonic transition as a function of magnetic field in modulation doped GaAlAs/GaAs quantum well

P. Vicente , A. Kavokin , A. Raymond , S. Lyapin , K. Zekentes
Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-323-C5-326. ⟨10.1051/jp4:1993566⟩
Journal articles jpa-00251653v1

Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates

Stéphane Monéger , Americo Tabata , C. Bru-Chevallier , G. Guillot , A. Georgakilas
Applied Physics Letters, 1993, 63 (12), pp.1654-1656
Journal articles hal-01977121v1

Optical properties of InGaAs films embedded in plasma etched InP wells.

A. Georgakilas , Christou A. , Pierre Lefebvre , Jacques Allègre , K. Zekentes
Applied Physics Letters, 1992, 61 (7), pp.798. ⟨10.1063/1.107805⟩
Journal articles hal-01176049v1

Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer Layers

Scott Greenhorn , Edwige Bano , Valerie Stambouli , Konstantinos Zekentes
Réunion de printemps du club Microcapteurs chimiques (CMC2), Mar 2024, Grenoble, France
Conference poster hal-04756524v1

Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer Layers

Scott Greenhorn , Edwige Bano , Valerie Stambouli , Konstantinos Zekentes
Grenoble Neurotech School 2024, Apr 2024, Aussois, France
Conference poster hal-04756572v1

Optimizing a-SiC Film Chemical Resistance for Long-Lifetime All-SiC Neural Interfaces

Scott Greenhorn , Andrei Uvarov , Edwige Bano , Konstantinos Zekentes , Valerie Stambouli
E-MRS Spring, May 2024, Strasbourg, France
Conference poster hal-04756553v1

Comparing 4H-SiC NPN Buffer Layers by Epitaxy and Implantation for Neural Interface Isolation

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Gwenaelle Pound-Lana
20th International Conference on Silicon Carbide and Related Materials (ICSCRM), Sep 2023, Sorrento, Italy
Conference poster hal-04756495v1

Optimizing Neural Interface Passivation with PECVD a-SiC:H Films

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Andrei Uvarov
ICSCRM 2022, Sep 2022, Davos, Switzerland.
Conference poster hal-04726160v1

An open gate 4H-SiC junction field effect transistor for pH sensing

Olfa Karker , Konstantinos Zekentes , Nikolaos Makris , Valerie Stambouli , Edwige Bano
19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland
Conference poster hal-04756631v1

Growth of polycrystalline SiC thin films by chemical vapor deposition for brain implanted electrodes

Michalis Gavalas , Frédéric Mercier , Jorge Sanchez Espinoza , Clément Hébert , E. Blanquet
ICSCRM2022, Sep 2022, Davos (Suisse), Switzerland
Conference poster hal-04827865v1

Modelling and development of 4H-SiC nanowire/nanoribbon biosensing FET structures

Olfa Karker , Konstantinos Zekentes , Aude Bouchard , Isabelle Gélard , Xavier Mescot
European Conference on Silicon Carbide and Related Materials (ECSCRM, Oct 2021, Tours, France
Conference poster hal-04756677v1

Transistor à effet de champ à jonction et procédé de fabrication associé

Olfa Karker , Valérie Stambouli , Edwige Bano , Konstantinos Zekentes
France, Patent n° : Transistor à effet de champ à jonction et procédé de fabrication associé ; PCT/EP2024/075138. CMNE. 2024
Patents hal-04894005v1

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging

Maria Kayambaki , Nikolaos Makris , Katerina Tsagaraki , Hervé Peyre , Antonis Stavrinidis
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Materials Science Forum, 963, Trans Tech Publications Inc., pp.328-331, 2019, ⟨10.4028/www.scientific.net/MSF.963.328⟩
Proceedings hal-04832035v1