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Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devices
Michalis Gavalas
,
Frédéric Mercier
,
E. Blanquet
,
Konstantinos Zekentes
WOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece
Communication dans un congrès
hal-04819565
v1
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Hydrogel based functionalization of SiC films for new hybrid neural Interfaces
Scott Greenhorn
,
Rachel Auzély-Velty
,
C Verdier
,
Matthieu Weber
,
Isabelle Gélard
et al.
E‐MRS Spring Meeting, May 2024, Strasbourg, France
Communication dans un congrès
hal-04756566
v1
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Composition and structure determination of PECVD amorphous silicon carbide : techniques, synergies, and optimization
Scott Greenhorn
,
Konstantinos Zekentes
,
Edwige Bano
,
Valerie Stambouli
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), May 2024, Heraklion, Greece
Communication dans un congrès
hal-04756539
v1
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New SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing
Olfa Karker
,
Konstantinos Zekentes
,
N Makris
,
Edwige Bano
,
Valerie Stambouli
EUROSENSORS XXXV, Sep 2023, Lecce, Italy
Communication dans un congrès
hal-04756508
v1
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Comparing Monocrystalline SiC N-P-N Epitaxial and Implanted Junctions for Isolation in Neural Interfaces
Scott Greenhorn
,
Gwenaelle Pound-Lana
,
Jumana Boussey
,
Edwige Bano
,
Valerie Stambouli
et al.
47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) & 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (-EXMATEC 2024), May 2023, Palermo, Italy
Communication dans un congrès
hal-04756589
v1
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SiC:H Characterization Towards Optimal MEA Neural Interface Passivation
Scott Greenhorn
,
Konstantinos Zekentes
,
Edwige Bano
,
Valerie Stambouli
,
Andrei Uvarov
45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
Communication dans un congrès
hal-04756667
v1
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One-step fabrication of submicron/nanowires from SOI substrates by optimized proximity UV lithography
Olfa Karker
,
Konstantinos Zekentes
,
Aude Bouchard
,
Isabelle Gélard
,
Valerie Stambouli
et al.
48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), Sep 2022, Louvain, Belgium
Communication dans un congrès
hal-04756650
v1
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Fabrication of new SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing
Olfa Karker
,
Konstantinos Zekentes
,
Nikolaos Makris
,
Edwige Bano
,
Valerie Stambouli
Deuxièmes Rencontres Capteurs de l’Université Bourgogne Franche-Comté (RCUBFC), Nov 2022, Dijon, France
Communication dans un congrès
hal-04706478
v1
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A novel process to realize 4H-SiC nanowire arrays
Maria Androulidaki
,
Maximilien Cottat
,
Antonios Stavrinidis
,
Cécile Gourgon
,
Camille Petit-Etienne
et al.
MNE 2019, Sep 2019, Rhodes, Greece
Communication dans un congrès
hal-02344211
v1
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4H-SiC Nanowire arrays formation by nanoimprint lithography, plasma etching and sacrificial oxidation
Maximilien Cottat
,
Antonios Stavrinidis
,
Cécile Gourgon
,
Camille Petit-Etienne
,
Maria Androulidaki
et al.
WocSdice 2019, Jun 2019, Cabourg, France
Communication dans un congrès
hal-02344210
v1
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Cross-section doping topography of 4H-SiC VJFETs by various techniques
K. Tsagaraki
,
Maher Nafouti
,
H. Peyre
,
K Vamvoukakis
,
N Makris
et al.
Communication dans un congrès
hal-01698971
v1
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Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs)
Konstantinos Zekentes
,
Edwige Bano
40th International Semiconductor Conference (CAS 2017), Oct 2017, Sinaia, Romania
Communication dans un congrès
hal-01698966
v1
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Top-down 3C-SiC NWFETs
Jihoon Choi
,
Edwige Bano
,
Anne Henry
,
Giovanni Attolini
,
Konstantinos Zekentes
40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal
Communication dans un congrès
hal-01698956
v1
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
Sylvie Contreras
,
Leszek Konczewicz
,
Pawel Kwasnicki
,
Roxana Arvinte
,
Herve Peyre
et al.
Communication dans un congrès
hal-01936580
v1
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SiC Nanowire Field-Effect-Transistors
Konstantinos Zekentes
,
Edwige Bano
13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct 2016, Rome, Italy
Communication dans un congrès
hal-01698953
v1
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capacitances in 4H-SiC TI-VJFETs
M. Kayambaki
,
A. Stavrinidis
,
George Konstantinidis
,
K. Zekentes
11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Communication dans un congrès
hal-02066426
v1
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Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
Konstantinos Zekentes
,
Konstantin Vassilevski
,
Antonis Stavrinidis
,
Konstantin Konstantinidis
,
Maria Kayambaki
et al.
16th International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Catane, Italy. pp.913-916
Communication dans un congrès
hal-02025247
v1
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Salicide-like process for the formation of gate and source contacts in 4H-SiC TI-VJFETS
A. Stavrinidis
,
George Konstantinidis
,
K. Vamvoukakis
,
K. Zekentes
11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Communication dans un congrès
hal-02066431
v1
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Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs
Ji Hoon Choi
,
Edwige Bano
,
Anne Henry
,
Giovanni Attolini
,
Konstantinos Zekentes
16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02008440
v1
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4H-SiC VJFETs with Self-Aligned Contacts
Konstantinos Zekentes
,
Antonis Stavrinidis
,
George Konstantinidis
,
Maria Kayambaki
,
Konstantinos Vamvoukakis
et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Communication dans un congrès
hal-02133681
v1
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Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC
Konstantinos Zekentes
,
Katerina Tsagaraki
,
Maria Androulidaki
,
Maria Kayambaki
,
Antonis Stavrinidis
et al.
14th International Conference on Silicon Carbide and Related Materials 2011, Sep 2011, Cleveland, United States. pp.589-592
Communication dans un congrès
hal-02025470
v1
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Schottky barrier 3C-SiC nanowire field effect transistor ECSCRM
K. Rogdakis
,
Edwige Bano
,
Laurent Montès
,
Mikhael Bechelany
,
D. Cornu
et al.
European Conference on Silicon Carbide and Related, 2010, Oslo, Norway. pp.613-616
Communication dans un congrès
hal-00604274
v1
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Electrical transport properties of catalyst-free grown 3C-SiC nanowires
K. Rogdakis
,
Edwige Bano
,
L. Montes
,
K. Zekentes
,
Mikhael Bechelany
et al.
International workshop on 3C-SiC hetero-epitaxy (Hetero-SiC '09), May 2009, Catania, Italy
Communication dans un congrès
hal-00603791
v1
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Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
Aurélie Thuaire
,
Michel Mermoux
,
Edwige Bano
,
Alexandre Crisci
,
Francis Baillet
et al.
European Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912
Communication dans un congrès
hal-00149053
v1
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Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method
Nicolas Camara
,
K. Zekentes
,
Edwige Bano
,
Aurélie Thuaire
,
A. Lebedev
International Conf. on SiC and Related Materials ICSCRM'05, 2006, France. pp.391-394
Communication dans un congrès
hal-00146595
v1
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