KZ

Konstantinos Zekentes

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Publications

Optimizing a-SiC Film Chemical Resistance for Long-Lifetime All-SiC Neural Interfaces

Scott Greenhorn , Andrei Uvarov , Edwige Bano , Konstantinos Zekentes , Valerie Stambouli
E-MRS Spring, May 2024, Strasbourg, France
Poster de conférence hal-04756553 v1

Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer Layers

Scott Greenhorn , Edwige Bano , Valerie Stambouli , Konstantinos Zekentes
Réunion de printemps du club Microcapteurs chimiques (CMC2), Mar 2024, Grenoble, France
Poster de conférence hal-04756524 v1

Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer Layers

Scott Greenhorn , Edwige Bano , Valerie Stambouli , Konstantinos Zekentes
Grenoble Neurotech School 2024, Apr 2024, Aussois, France
Poster de conférence hal-04756572 v1

Comparing 4H-SiC NPN Buffer Layers by Epitaxy and Implantation for Neural Interface Isolation

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Gwenaelle Pound-Lana et al.
20th International Conference on Silicon Carbide and Related Materials (ICSCRM), Sep 2023, Sorrento, Italy
Poster de conférence hal-04756495 v1

An open gate 4H-SiC junction field effect transistor for pH sensing

Olfa Karker , Konstantinos Zekentes , Nikolaos Makris , Valerie Stambouli , Edwige Bano
19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland
Poster de conférence hal-04756631 v1

Growth of polycrystalline SiC thin films by chemical vapor deposition for brain implanted electrodes

Michalis Gavalas , Frédéric Mercier , Jorge Sanchez Espinoza , Clément Hébert , E. Blanquet et al.
ICSCRM2022, Sep 2022, Davos (Suisse), Switzerland
Poster de conférence hal-04827865 v1

Optimizing Neural Interface Passivation with PECVD a-SiC:H Films

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Andrei Uvarov
ICSCRM 2022, Sep 2022, Davos, Switzerland.
Poster de conférence hal-04726160 v1

Modelling and development of 4H-SiC nanowire/nanoribbon biosensing FET structures

Olfa Karker , Konstantinos Zekentes , Aude Bouchard , Isabelle Gélard , Xavier Mescot et al.
European Conference on Silicon Carbide and Related Materials (ECSCRM, Oct 2021, Tours, France
Poster de conférence hal-04756677 v1

Transistor à effet de champ à jonction et procédé de fabrication associé

Olfa Karker , Valérie Stambouli , Edwige Bano , Konstantinos Zekentes
France, N° de brevet: Transistor à effet de champ à jonction et procédé de fabrication associé ; PCT/EP2024/075138. CMNE. 2024
Brevet hal-04894005 v1
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Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation

Scott Greenhorn , Valérie Stambouli , Edwige Bano , Konstantinos Zekentes
Solid State Phenomena, 2024, 358, pp.31-35. ⟨10.4028/p-jqCtr5⟩
Article dans une revue hal-04743362 v1
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Amorphous SiC thin films deposited by PECVD for Passivation in Biomedical Devices

Scott Greenhorn , Edwige Bano , Valérie Stambouli , Konstantinos Zekentes
Materials, 2024, 17 (5), pp.1135. ⟨10.3390/ma17051135⟩
Article dans une revue hal-04778567 v1
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Optimizing PECVD a-SiC:H Films for Neural Interface Passivation

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Andrei Uvarov
Key Engineering Materials, 2023, 947, pp.83-88. ⟨10.4028/p-762f40⟩
Article dans une revue hal-04272217 v1
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Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications

Olfa Karker , Konstantinos Zekentes , Nikolaos Makris , Valerie Stambouli , Edwige Bano
Key Engineering Materials, 2023, 946, pp.111-118. ⟨10.4028/p-03m3ss⟩
Article dans une revue hal-04272243 v1
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Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures

Olfa Karker , Konstantinos Zekentes , Aude Bouchard , Isabelle Gélard , Xavier Mescot et al.
Materials Science Forum, 2022, 1062, pp.608-612. ⟨10.4028/p-23d7ab⟩
Article dans une revue hal-04272260 v1
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Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications

Konstantinos Zekentes , Jihoon Choi , Edwige Bano , Valérie Stambouli , Konstantinos Rogdakis
Microelectronic Engineering, 2022, 255, pp.111704. ⟨10.1016/j.mee.2021.111704⟩
Article dans une revue hal-03860512 v1

A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime

Nikolaos Makris , Maria Kayambaki , Antonis Stavrinidis , George Konstantinidis , Konstantinos Zekentes
Materials Science Forum, 2018, 924, pp.649-652. ⟨10.4028/www.scientific.net/MSF.924.649⟩
Article dans une revue hal-02008590 v1

On the Optimum Determination and Use of SiC VJFET Threshold Voltage

Maria Kayambaki , Nikolaos Makris , Antonis Stavrinidis , George Konstantinidis , Konstantinos Zekentes
Materials Science Forum, 2018, 924, pp.657-660. ⟨10.4028/www.scientific.net/MSF.924.657⟩
Article dans une revue hal-02008578 v1

Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs

Antonis Stavrinidis , George Konstantinidis , Konstantinos Vamvoukakis , Konstantinos Zekentes
Materials Science Forum, 2017, 897, pp.407-410. ⟨10.4028/www.scientific.net/MSF.897.407⟩
Article dans une revue hal-02066408 v1

High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs

K. Vamvoukakis , A. Stavrinidis , D. Stefanakis , G. Konstantinidis , M. Kayambaki et al.
E3S Web of Conferences, 2017, 16, pp.12001
Article dans une revue hal-02008624 v1
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Channel width effect on the operation of 4H-SiC vertical JFETs

K Vamvoukakis , D Stefanakis , A Stavrinidis , K Vassilevski , G Konstantinidis et al.
Physica Status Solidi A (applications and materials science), 2017
Article dans une revue hal-01705998 v1

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Ji Hoon Choi , Edwige Bano , Anne Henry , Giovanni Attolini , Konstantinos Zekentes
Materials Science Forum, 2016, 858, pp.1001-1005. ⟨10.4028/www.scientific.net/MSF.858.1001⟩
Article dans une revue hal-02006603 v1
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4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantin Vamvoukakis et al.
Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩
Article dans une revue hal-01391852 v1

Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs

Konstantinos Rogdakis , Edwige Bano , Laurent Montès , Mikhael Bechelany , David Cornu et al.
IEEE Transactions on Nanotechnology, 2011, 10 (5), pp.980 - 984. ⟨10.1109/TNANO.2010.2091147⟩
Article dans une revue hal-01695785 v1
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SiC nanowires: material and devices

K. Zekentes , K Rogdakis
Journal of Physics D: Applied Physics, 2011, 44 (13), pp.133001. ⟨10.1088/0022-3727/44/13/133001⟩
Article dans une revue hal-00606295 v1

Si nanowire p-FET with asymmetric source-drain I-V characteristics

L. Sang-Kwon , L. Seung-Yong , K. Rogdakis , J. Chan-Oh , K. Dong-Joo et al.
Solid State Communications, 2009, 24 (12), pp.461-463
Article dans une revue hal-00596152 v1

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

K. Rogdakis , S. Poli , Edwige Bano , K. Zekentes , M. G. Pala
Nanotechnology, 2009, 20 (29), pp.295202
Article dans une revue hal-00596134 v1

3C-Silicon Carbide nanowire FET: An experimental and theoretical Approach,

K. Rogdakis , S.Y. Lee , M. Bescond , S.K. Lee , Edwige Bano et al.
IEEE Transactions on Electron Devices, 2008, 55 (8), pp.1970-1976
Article dans une revue hal-00392653 v1

Microwave modulators based on 4H-SiC p-i-n diodes

K. Zekentes , Nicolas Camara , V.V. Basanets , M.S. Boltovets , V. Krivutsa et al.
IEEE Transactions on Microwave Theory and Techniques, 2008
Article dans une revue hal-00391484 v1

Fabrication of Ion-implanted Si Nanowire p-FETs

S.Y. Lee , C.O. Jang , K. Dong-Joo , H. Jung-Hwan , K. Rogdakis et al.
Journal of Physical Chemistry C, 2008, 112, pp.13287-13291
Article dans une revue hal-00392664 v1

Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes

K. Rogadakis , M. Bescond , Edwige Bano , K. Zekentes
Nanotechnology, 2007, 18, pp.475715-475720. ⟨10.1088/0957-4484/18/47/475715⟩
Article dans une revue istex hal-00353870 v1

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Aurélie Thuaire , Michel Mermoux , Edwige Bano , Alexandre Crisci , Francis Baillet et al.
Materials Science Forum, 2007, 556-557, pp. 909-912. ⟨10.4028/3-908453-69-0.909⟩
Article dans une revue hal-00386384 v1

Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method

Nicolas Camara , K. Zekentes , Edwige Bano , Aurélie Thuaire , A. Lebedev
International Conf. on SiC and Related Materials ICSCRM'05, 2005, XX, pp.XX
Article dans une revue hal-00146148 v1

Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching

Nicolas Camara , Aurélie Thuaire , Edwige Bano , K. Zekentes
European Conf. on SiC and Related Materials, ECSCRM'04, 2005, 483-485, pp.773-776
Article dans une revue hal-00146143 v1

Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching

Nicolas Camara , Aurélie Thuaire , Edwige Bano , K. Zekentes
Physica Status Solidi, 2005, a, pp.1-5
Article dans une revue hal-00145183 v1

Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates

Stéphane Monéger , Americo Tabata , C. Bru-Chevallier , G. Guillot , A. Georgakilas et al.
Applied Physics Letters, 1993, 63 (12), pp.1654-1656
Article dans une revue hal-01977121 v1
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Oscillator strength of the E1HH1 excitonic transition as a function of magnetic field in modulation doped GaAlAs/GaAs quantum well

P. Vicente , A. Kavokin , A. Raymond , S. Lyapin , K. Zekentes et al.
Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-323-C5-326. ⟨10.1051/jp4:1993566⟩
Article dans une revue istex jpa-00251653 v1

Optical properties of InGaAs films embedded in plasma etched InP wells.

A. Georgakilas , Christou A. , Pierre Lefebvre , Jacques Allègre , K. Zekentes et al.
Applied Physics Letters, 1992, 61 (7), pp.798. ⟨10.1063/1.107805⟩
Article dans une revue hal-01176049 v1

Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devices

Michalis Gavalas , Frédéric Mercier , E. Blanquet , Konstantinos Zekentes
WOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece
Communication dans un congrès hal-04819565 v1

Hydrogel based functionalization of SiC films for new hybrid neural Interfaces

Scott Greenhorn , Rachel Auzély-Velty , C Verdier , Matthieu Weber , Isabelle Gélard et al.
E‐MRS Spring Meeting, May 2024, Strasbourg, France
Communication dans un congrès hal-04756566 v1

Composition and structure determination of PECVD amorphous silicon carbide : techniques, synergies, and optimization

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli
Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), May 2024, Heraklion, Greece
Communication dans un congrès hal-04756539 v1

New SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing

Olfa Karker , Konstantinos Zekentes , N Makris , Edwige Bano , Valerie Stambouli
EUROSENSORS XXXV, Sep 2023, Lecce, Italy
Communication dans un congrès hal-04756508 v1

Comparing Monocrystalline SiC N-P-N Epitaxial and Implanted Junctions for Isolation in Neural Interfaces

Scott Greenhorn , Gwenaelle Pound-Lana , Jumana Boussey , Edwige Bano , Valerie Stambouli et al.
47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) & 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (-EXMATEC 2024), May 2023, Palermo, Italy
Communication dans un congrès hal-04756589 v1

SiC:H Characterization Towards Optimal MEA Neural Interface Passivation

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Andrei Uvarov
45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
Communication dans un congrès hal-04756667 v1

One-step fabrication of submicron/nanowires from SOI substrates by optimized proximity UV lithography

Olfa Karker , Konstantinos Zekentes , Aude Bouchard , Isabelle Gélard , Valerie Stambouli et al.
48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), Sep 2022, Louvain, Belgium
Communication dans un congrès hal-04756650 v1

Fabrication of new SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing

Olfa Karker , Konstantinos Zekentes , Nikolaos Makris , Edwige Bano , Valerie Stambouli
Deuxièmes Rencontres Capteurs de l’Université Bourgogne Franche-Comté (RCUBFC), Nov 2022, Dijon, France
Communication dans un congrès hal-04706478 v1

A novel process to realize 4H-SiC nanowire arrays

Maria Androulidaki , Maximilien Cottat , Antonios Stavrinidis , Cécile Gourgon , Camille Petit-Etienne et al.
MNE 2019, Sep 2019, Rhodes, Greece
Communication dans un congrès hal-02344211 v1

4H-SiC Nanowire arrays formation by nanoimprint lithography, plasma etching and sacrificial oxidation

Maximilien Cottat , Antonios Stavrinidis , Cécile Gourgon , Camille Petit-Etienne , Maria Androulidaki et al.
WocSdice 2019, Jun 2019, Cabourg, France
Communication dans un congrès hal-02344210 v1
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Cross-section doping topography of 4H-SiC VJFETs by various techniques

K. Tsagaraki , Maher Nafouti , H. Peyre , K Vamvoukakis , N Makris et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington, DC, United States. ⟨10.4028/www.scientific.net/MSF.924.653⟩
Communication dans un congrès hal-01698971 v1

Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs)

Konstantinos Zekentes , Edwige Bano
40th International Semiconductor Conference (CAS 2017), Oct 2017, Sinaia, Romania
Communication dans un congrès hal-01698966 v1

Top-down 3C-SiC NWFETs

Jihoon Choi , Edwige Bano , Anne Henry , Giovanni Attolini , Konstantinos Zekentes
40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal
Communication dans un congrès hal-01698956 v1

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Sylvie Contreras , Leszek Konczewicz , Pawel Kwasnicki , Roxana Arvinte , Herve Peyre et al.
16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩
Communication dans un congrès hal-01936580 v1

SiC Nanowire Field-Effect-Transistors

Konstantinos Zekentes , Edwige Bano
13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct 2016, Rome, Italy
Communication dans un congrès hal-01698953 v1

capacitances in 4H-SiC TI-VJFETs

M. Kayambaki , A. Stavrinidis , George Konstantinidis , K. Zekentes
11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Communication dans un congrès hal-02066426 v1

Modelling of 4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Konstantin Vassilevski , Antonis Stavrinidis , Konstantin Konstantinidis , Maria Kayambaki et al.
16th International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Catane, Italy. pp.913-916
Communication dans un congrès hal-02025247 v1

Salicide-like process for the formation of gate and source contacts in 4H-SiC TI-VJFETS

A. Stavrinidis , George Konstantinidis , K. Vamvoukakis , K. Zekentes
11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Communication dans un congrès hal-02066431 v1

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Ji Hoon Choi , Edwige Bano , Anne Henry , Giovanni Attolini , Konstantinos Zekentes
16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02008440 v1
Image document

4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Communication dans un congrès hal-02133681 v1

Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC

Konstantinos Zekentes , Katerina Tsagaraki , Maria Androulidaki , Maria Kayambaki , Antonis Stavrinidis et al.
14th International Conference on Silicon Carbide and Related Materials 2011, Sep 2011, Cleveland, United States. pp.589-592
Communication dans un congrès hal-02025470 v1

Schottky barrier 3C-SiC nanowire field effect transistor ECSCRM

K. Rogdakis , Edwige Bano , Laurent Montès , Mikhael Bechelany , D. Cornu et al.
European Conference on Silicon Carbide and Related, 2010, Oslo, Norway. pp.613-616
Communication dans un congrès hal-00604274 v1

Electrical transport properties of catalyst-free grown 3C-SiC nanowires

K. Rogdakis , Edwige Bano , L. Montes , K. Zekentes , Mikhael Bechelany et al.
International workshop on 3C-SiC hetero-epitaxy (Hetero-SiC '09), May 2009, Catania, Italy
Communication dans un congrès hal-00603791 v1

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Aurélie Thuaire , Michel Mermoux , Edwige Bano , Alexandre Crisci , Francis Baillet et al.
European Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912
Communication dans un congrès hal-00149053 v1

Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method

Nicolas Camara , K. Zekentes , Edwige Bano , Aurélie Thuaire , A. Lebedev
International Conf. on SiC and Related Materials ICSCRM'05, 2006, France. pp.391-394
Communication dans un congrès hal-00146595 v1

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging

Maria Kayambaki , Nikolaos Makris , Katerina Tsagaraki , Hervé Peyre , Antonis Stavrinidis et al.
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Materials Science Forum, 963, Trans Tech Publications Inc., pp.328-331, 2019, ⟨10.4028/www.scientific.net/MSF.963.328⟩
Proceedings/Recueil des communications hal-04832035 v1