KZ

Konstantinos Zekentes

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Publications

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Optimizing chemical resistance of PECVD amorphous silicon carbide thin films

Scott Greenhorn , Valérie Stambouli , Edwige Bano , Andrei Uvarov , Sonia Ortega-Murillo et al.

Journal of Non-Crystalline Solids, 2025, 666, pp.123723. ⟨10.1016/j.jnoncrysol.2025.123723⟩

Article dans une revue hal-05379544v1
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Multi-technique study of composition, structure, and bonding in PECVD amorphous silicon carbide films

Scott Greenhorn , Valérie Stambouli , Edwige Bano , François Pierre , Nicolas Gauthier et al.

Materials Science in Semiconductor Processing, 2025, 192, pp.109444. ⟨10.1016/j.mssp.2025.109444⟩

Article dans une revue hal-05379623v1

Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization

Michail Gavalas , Yann Gallou , Didier Chaussende , Elisabeth Blanquet , Frédéric Mercier et al.

Micromachines, 2025, 16 (3), pp.276. ⟨10.3390/mi16030276⟩

Article dans une revue hal-05396550v1
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Improving SiC surface properties by hyaluronic acid hydrogel deposition for neural probe applications

Scott Greenhorn , Rachel Auzély-Velty , Claude Verdier , Matthieu Weber , Isabelle Jeacomine et al.

Surface and Coatings Technology, 2025, 512, ⟨10.1016/j.surfcoat.2025.132299⟩

Article dans une revue hal-05075122v1
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Temperature Influence on the Deposition of Nitrogen-Doped Silicon Carbide Polycrystalline Films

Michail Gavalas , Scott Greenhorn , Frédéric Mercier , Konstantinos Zekentes

Coatings, 2025, 15 (1), pp.106. ⟨10.3390/coatings15010106⟩

Article dans une revue hal-05396544v1
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Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation

Scott Greenhorn , Valérie Stambouli , Edwige Bano , Konstantinos Zekentes

Solid State Phenomena, 2024, 358, pp.31-35. ⟨10.4028/p-jqCtr5⟩

Article dans une revue hal-04743362v1
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Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Scott Greenhorn , Edwige Bano , Valérie Stambouli , Konstantinos Zekentes

Materials, 2024, 17 (5), pp.1135. ⟨10.3390/ma17051135⟩

Article dans une revue hal-05353079v1
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Optimizing PECVD a-SiC:H Films for Neural Interface Passivation

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Andrei Uvarov

Key Engineering Materials, 2023, 947, pp.83-88. ⟨10.4028/p-762f40⟩

Article dans une revue hal-04272217v1
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Fabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing Applications

Olfa Karker , Konstantinos Zekentes , Nikolaos Makris , Valerie Stambouli , Edwige Bano

Key Engineering Materials, 2023, 946, pp.111-118. ⟨10.4028/p-03m3ss⟩

Article dans une revue hal-04272243v1
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Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures

Olfa Karker , Konstantinos Zekentes , Aude Bouchard , Isabelle Gélard , Xavier Mescot et al.

Materials Science Forum, 2022, 1062, pp.608-612. ⟨10.4028/p-23d7ab⟩

Article dans une revue hal-04272260v1
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Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications

Konstantinos Zekentes , Jihoon Choi , Edwige Bano , Valérie Stambouli , Konstantinos Rogdakis

Microelectronic Engineering, 2022, 255, pp.111704. ⟨10.1016/j.mee.2021.111704⟩

Article dans une revue hal-03860512v1

A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime

Nikolaos Makris , Maria Kayambaki , Antonis Stavrinidis , George Konstantinidis , Konstantinos Zekentes

Materials Science Forum, 2018, 924, pp.649-652. ⟨10.4028/www.scientific.net/MSF.924.649⟩

Article dans une revue hal-02008590v1

On the Optimum Determination and Use of SiC VJFET Threshold Voltage

Maria Kayambaki , Nikolaos Makris , Antonis Stavrinidis , George Konstantinidis , Konstantinos Zekentes

Materials Science Forum, 2018, 924, pp.657-660. ⟨10.4028/www.scientific.net/MSF.924.657⟩

Article dans une revue hal-02008578v1

Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs

Antonis Stavrinidis , George Konstantinidis , Konstantinos Vamvoukakis , Konstantinos Zekentes

Materials Science Forum, 2017, 897, pp.407-410. ⟨10.4028/www.scientific.net/MSF.897.407⟩

Article dans une revue hal-02066408v1

High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs

K. Vamvoukakis , A. Stavrinidis , D. Stefanakis , G. Konstantinidis , M. Kayambaki et al.

E3S Web of Conferences, 2017, 16, pp.12001

Article dans une revue hal-02008624v1
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Channel width effect on the operation of 4H-SiC vertical JFETs

K Vamvoukakis , D Stefanakis , A Stavrinidis , K Vassilevski , G Konstantinidis et al.

Physica Status Solidi A (applications and materials science), 2017

Article dans une revue hal-01705998v1

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Ji Hoon Choi , Edwige Bano , Anne Henry , Giovanni Attolini , Konstantinos Zekentes

Materials Science Forum, 2016, 858, pp.1001-1005. ⟨10.4028/www.scientific.net/MSF.858.1001⟩

Article dans une revue hal-02006603v1
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4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantin Vamvoukakis et al.

Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩

Article dans une revue hal-01391852v1

Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs

Konstantinos Rogdakis , Edwige Bano , Laurent Montès , Mikhael Bechelany , David Cornu et al.

IEEE Transactions on Nanotechnology, 2011, 10 (5), pp.980 - 984. ⟨10.1109/TNANO.2010.2091147⟩

Article dans une revue hal-01695785v1
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SiC nanowires: material and devices

K. Zekentes , K Rogdakis

Journal of Physics D: Applied Physics, 2011, 44 (13), pp.133001. ⟨10.1088/0022-3727/44/13/133001⟩

Article dans une revue hal-00606295v1

Si nanowire p-FET with asymmetric source-drain I-V characteristics

L. Sang-Kwon , L. Seung-Yong , K. Rogdakis , J. Chan-Oh , K. Dong-Joo et al.

Solid State Communications, 2009, 24 (12), pp.461-463

Article dans une revue hal-00596152v1

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

K. Rogdakis , S. Poli , Edwige Bano , K. Zekentes , M. G. Pala

Nanotechnology, 2009, 20 (29), pp.295202

Article dans une revue hal-00596134v1

3C-Silicon Carbide nanowire FET: An experimental and theoretical Approach,

K. Rogdakis , S.Y. Lee , M. Bescond , S.K. Lee , Edwige Bano et al.

IEEE Transactions on Electron Devices, 2008, 55 (8), pp.1970-1976

Article dans une revue hal-00392653v1

Microwave modulators based on 4H-SiC p-i-n diodes

K. Zekentes , Nicolas Camara , V.V. Basanets , M.S. Boltovets , V. Krivutsa et al.

IEEE Transactions on Microwave Theory and Techniques, 2008

Article dans une revue hal-00391484v1

Fabrication of Ion-implanted Si Nanowire p-FETs

S.Y. Lee , C.O. Jang , K. Dong-Joo , H. Jung-Hwan , K. Rogdakis et al.

Journal of Physical Chemistry C, 2008, 112, pp.13287-13291

Article dans une revue hal-00392664v1

Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes

K. Rogadakis , M. Bescond , Edwige Bano , K. Zekentes

Nanotechnology, 2007, 18, pp.475715-475720. ⟨10.1088/0957-4484/18/47/475715⟩

Article dans une revue istex hal-00353870v1

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Aurélie Thuaire , Michel Mermoux , Edwige Bano , Alexandre Crisci , Francis Baillet et al.

Materials Science Forum, 2007, 556-557, pp. 909-912. ⟨10.4028/3-908453-69-0.909⟩

Article dans une revue hal-00386384v1

Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method

Nicolas Camara , K. Zekentes , Edwige Bano , Aurélie Thuaire , A. Lebedev

International Conf. on SiC and Related Materials ICSCRM'05, 2005, XX, pp.XX

Article dans une revue hal-00146148v1

Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching

Nicolas Camara , Aurélie Thuaire , Edwige Bano , K. Zekentes

European Conf. on SiC and Related Materials, ECSCRM'04, 2005, 483-485, pp.773-776

Article dans une revue hal-00146143v1

Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching

Nicolas Camara , Aurélie Thuaire , Edwige Bano , K. Zekentes

Physica Status Solidi, 2005, a, pp.1-5

Article dans une revue hal-00145183v1

Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates

Stéphane Monéger , Americo Tabata , C. Bru-Chevallier , G. Guillot , A. Georgakilas et al.

Applied Physics Letters, 1993, 63 (12), pp.1654-1656

Article dans une revue hal-01977121v1
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Oscillator strength of the E1HH1 excitonic transition as a function of magnetic field in modulation doped GaAlAs/GaAs quantum well

P. Vicente , A. Kavokin , A. Raymond , S. Lyapin , K. Zekentes et al.

Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-323-C5-326. ⟨10.1051/jp4:1993566⟩

Article dans une revue istex jpa-00251653v1

Optical properties of InGaAs films embedded in plasma etched InP wells.

A. Georgakilas , Christou A. , Pierre Lefebvre , Jacques Allègre , K. Zekentes et al.

Applied Physics Letters, 1992, 61 (7), pp.798. ⟨10.1063/1.107805⟩

Article dans une revue hal-01176049v1
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Fabrication of planar nanostructured SiC microelectrode arrays for longlifetime neural interfaces

F Iacovella , G Pound-Lana , L Labbe , S Labau , C Petit-Etienne et al.

MNE 2025 - 51st International Micro and Nano Engineering Conference, Sep 2025, Southamptom, United Kingdom

Communication dans un congrès hal-05322214v1

Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devices

Michalis Gavalas , Frédéric Mercier , E. Blanquet , Konstantinos Zekentes

WOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece

Communication dans un congrès hal-04819565v1

Hydrogel based functionalization of SiC films for new hybrid neural Interfaces

Scott Greenhorn , Rachel Auzély-Velty , Claude Verdier , Matthieu Weber , Isabelle Gélard et al.

E‐MRS Spring Meeting, May 2024, Strasbourg, France

Communication dans un congrès hal-04756566v1

Composition and structure determination of PECVD amorphous silicon carbide : techniques, synergies, and optimization

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli

Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), May 2024, Heraklion, Greece

Communication dans un congrès hal-04756539v1

New SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing

Olfa Karker , Konstantinos Zekentes , N Makris , Edwige Bano , Valerie Stambouli

EUROSENSORS XXXV, Sep 2023, Lecce, Italy

Communication dans un congrès hal-04756508v1

Comparing Monocrystalline SiC N-P-N Epitaxial and Implanted Junctions for Isolation in Neural Interfaces

Scott Greenhorn , Gwenaelle Pound-Lana , Jumana Boussey , Edwige Bano , Valerie Stambouli et al.

47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) & 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (-EXMATEC 2024), May 2023, Palermo, Italy

Communication dans un congrès hal-04756589v1

One-step fabrication of submicron/nanowires from SOI substrates by optimized proximity UV lithography

Olfa Karker , Konstantinos Zekentes , Aude Bouchard , Isabelle Gélard , Valerie Stambouli et al.

48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), Sep 2022, Louvain, Belgium

Communication dans un congrès hal-04756650v1

SiC:H Characterization Towards Optimal MEA Neural Interface Passivation

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Andrei Uvarov

45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal

Communication dans un congrès hal-04756667v1

Fabrication of new SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensing

Olfa Karker , Konstantinos Zekentes , Nikolaos Makris , Edwige Bano , Valerie Stambouli

Deuxièmes Rencontres Capteurs de l’Université Bourgogne Franche-Comté (RCUBFC), Nov 2022, Dijon, France

Communication dans un congrès hal-04706478v1

A novel process to realize 4H-SiC nanowire arrays

Maria Androulidaki , Maximilien Cottat , Antonios Stavrinidis , Cécile Gourgon , Camille Petit-Etienne et al.

MNE 2019, Sep 2019, Rhodes, Greece

Communication dans un congrès hal-02344211v1

4H-SiC Nanowire arrays formation by nanoimprint lithography, plasma etching and sacrificial oxidation

Maximilien Cottat , Antonios Stavrinidis , Cécile Gourgon , Camille Petit-Etienne , Maria Androulidaki et al.

WocSdice 2019, Jun 2019, Cabourg, France

Communication dans un congrès hal-02344210v1
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Cross-section doping topography of 4H-SiC VJFETs by various techniques

K. Tsagaraki , Maher Nafouti , H. Peyre , K Vamvoukakis , N Makris et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington, DC, United States. ⟨10.4028/www.scientific.net/MSF.924.653⟩

Communication dans un congrès hal-01698971v1

Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs)

Konstantinos Zekentes , Edwige Bano

40th International Semiconductor Conference (CAS 2017), Oct 2017, Sinaia, Romania

Communication dans un congrès hal-01698966v1

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Sylvie Contreras , Leszek Konczewicz , Pawel Kwasnicki , Roxana Arvinte , Herve Peyre et al.

16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩

Communication dans un congrès hal-01936580v1

SiC Nanowire Field-Effect-Transistors

Konstantinos Zekentes , Edwige Bano

13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct 2016, Rome, Italy

Communication dans un congrès hal-01698953v1

Top-down 3C-SiC NWFETs

Jihoon Choi , Edwige Bano , Anne Henry , Giovanni Attolini , Konstantinos Zekentes

40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal

Communication dans un congrès hal-01698956v1

capacitances in 4H-SiC TI-VJFETs

M. Kayambaki , A. Stavrinidis , George Konstantinidis , K. Zekentes

11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece

Communication dans un congrès hal-02066426v1

Modelling of 4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Konstantin Vassilevski , Antonis Stavrinidis , Konstantin Konstantinidis , Maria Kayambaki et al.

16th International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Catane, Italy. pp.913-916

Communication dans un congrès hal-02025247v1

Salicide-like process for the formation of gate and source contacts in 4H-SiC TI-VJFETS

A. Stavrinidis , George Konstantinidis , K. Vamvoukakis , K. Zekentes

11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece

Communication dans un congrès hal-02066431v1

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Ji Hoon Choi , Edwige Bano , Anne Henry , Giovanni Attolini , Konstantinos Zekentes

16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy

Communication dans un congrès hal-02008440v1
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4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis et al.

ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75

Communication dans un congrès hal-02133681v1

Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC

Konstantinos Zekentes , Katerina Tsagaraki , Maria Androulidaki , Maria Kayambaki , Antonis Stavrinidis et al.

14th International Conference on Silicon Carbide and Related Materials 2011, Sep 2011, Cleveland, United States. pp.589-592

Communication dans un congrès hal-02025470v1

Schottky barrier 3C-SiC nanowire field effect transistor ECSCRM

K. Rogdakis , Edwige Bano , Laurent Montès , Mikhael Bechelany , D. Cornu et al.

European Conference on Silicon Carbide and Related, 2010, Oslo, Norway. pp.613-616

Communication dans un congrès hal-00604274v1

Electrical transport properties of catalyst-free grown 3C-SiC nanowires

K. Rogdakis , Edwige Bano , L. Montes , K. Zekentes , Mikhael Bechelany et al.

International workshop on 3C-SiC hetero-epitaxy (Hetero-SiC '09), May 2009, Catania, Italy

Communication dans un congrès hal-00603791v1

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes

Aurélie Thuaire , Michel Mermoux , Edwige Bano , Alexandre Crisci , Francis Baillet et al.

European Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912

Communication dans un congrès hal-00149053v1

Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method

Nicolas Camara , K. Zekentes , Edwige Bano , Aurélie Thuaire , A. Lebedev

International Conf. on SiC and Related Materials ICSCRM'05, 2006, France. pp.391-394

Communication dans un congrès hal-00146595v1

Transistor à effet de champ à jonction et procédé de fabrication associé

Olfa Karker , Valérie Stambouli , Edwige Bano , Konstantinos Zekentes

France, N° de brevet: Transistor à effet de champ à jonction et procédé de fabrication associé ; PCT/EP2024/075138. CMNE. 2024

Brevet hal-04894005v1

Optimizing a-SiC Film Chemical Resistance for Long-Lifetime All-SiC Neural Interfaces

Scott Greenhorn , Andrei Uvarov , Edwige Bano , Konstantinos Zekentes , Valerie Stambouli

E-MRS Spring, May 2024, Strasbourg, France

Poster de conférence hal-04756553v1

Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer Layers

Scott Greenhorn , Edwige Bano , Valerie Stambouli , Konstantinos Zekentes

Réunion de printemps du club Microcapteurs chimiques (CMC2), Mar 2024, Grenoble, France

Poster de conférence hal-04756524v1

Neural Interface Isolation Using Epitaxial and Implanted 4H-SiC NPN Buffer Layers

Scott Greenhorn , Edwige Bano , Valerie Stambouli , Konstantinos Zekentes

Grenoble Neurotech School 2024, Apr 2024, Aussois, France

Poster de conférence hal-04756572v1

Comparing 4H-SiC NPN Buffer Layers by Epitaxy and Implantation for Neural Interface Isolation

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Gwenaelle Pound-Lana et al.

20th International Conference on Silicon Carbide and Related Materials (ICSCRM), Sep 2023, Sorrento, Italy

Poster de conférence hal-04756495v1

An open gate 4H-SiC junction field effect transistor for pH sensing

Olfa Karker , Konstantinos Zekentes , Nikolaos Makris , Valerie Stambouli , Edwige Bano

19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland

Poster de conférence hal-04756631v1

Growth of polycrystalline SiC thin films by chemical vapor deposition for brain implanted electrodes

Michalis Gavalas , Frédéric Mercier , Jorge Sanchez Espinoza , Clément Hébert , E. Blanquet et al.

ICSCRM2022, Sep 2022, Davos (Suisse), Switzerland

Poster de conférence hal-04827865v1

Optimizing Neural Interface Passivation with PECVD a-SiC:H Films

Scott Greenhorn , Konstantinos Zekentes , Edwige Bano , Valerie Stambouli , Andrei Uvarov

ICSCRM 2022, Sep 2022, Davos, Switzerland.

Poster de conférence hal-04726160v1

Modelling and development of 4H-SiC nanowire/nanoribbon biosensing FET structures

Olfa Karker , Konstantinos Zekentes , Aude Bouchard , Isabelle Gélard , Xavier Mescot et al.

European Conference on Silicon Carbide and Related Materials (ECSCRM, Oct 2021, Tours, France

Poster de conférence hal-04756677v1

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging

Maria Kayambaki , Nikolaos Makris , Katerina Tsagaraki , Hervé Peyre , Antonis Stavrinidis et al.

12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham (UK), United Kingdom. Materials Science Forum, 963, Trans Tech Publications Inc., pp.328-331, 2019, ⟨10.4028/www.scientific.net/MSF.963.328⟩

Proceedings/Recueil des communications hal-04832035v1