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KZ
Konstantinos Zekentes
65
Documents
Current affiliations
- IMEP-LAHC
Publications
Hydrogel based functionalization of SiC films for new hybrid neural InterfacesE‐MRS Spring Meeting, May 2024, Strasbourg, France
Conference papers
hal-04756566v1
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Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devicesWOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece
Conference papers
hal-04819565v1
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Composition and structure determination of PECVD amorphous silicon carbide : techniques, synergies, and optimizationWorkshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), May 2024, Heraklion, Greece
Conference papers
hal-04756539v1
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New SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensingEUROSENSORS XXXV, Sep 2023, Lecce, Italy
Conference papers
hal-04756508v1
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Comparing Monocrystalline SiC N-P-N Epitaxial and Implanted Junctions for Isolation in Neural Interfaces47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE) & 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (-EXMATEC 2024), May 2023, Palermo, Italy
Conference papers
hal-04756589v1
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One-step fabrication of submicron/nanowires from SOI substrates by optimized proximity UV lithography48th international conference on Micro and Nano Engineering - Eurosensors (MNE-ES), Sep 2022, Louvain, Belgium
Conference papers
hal-04756650v1
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Fabrication of new SiC microwire based ion sensitive junction field effect transistors (SiC ISJFETs) for pH sensingDeuxièmes Rencontres Capteurs de l’Université Bourgogne Franche-Comté (RCUBFC), Nov 2022, Dijon, France
Conference papers
hal-04706478v1
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SiC:H Characterization Towards Optimal MEA Neural Interface Passivation45th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
Conference papers
hal-04756667v1
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A novel process to realize 4H-SiC nanowire arraysMNE 2019, Sep 2019, Rhodes, Greece
Conference papers
hal-02344211v1
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4H-SiC Nanowire arrays formation by nanoimprint lithography, plasma etching and sacrificial oxidationWocSdice 2019, Jun 2019, Cabourg, France
Conference papers
hal-02344210v1
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Cross-section doping topography of 4H-SiC VJFETs by various techniquesInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington, DC, United States. ⟨10.4028/www.scientific.net/MSF.924.653⟩
Conference papers
hal-01698971v1
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Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs)40th International Semiconductor Conference (CAS 2017), Oct 2017, Sinaia, Romania
Conference papers
hal-01698966v1
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SiC Nanowire Field-Effect-Transistors13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 2016), Oct 2016, Rome, Italy
Conference papers
hal-01698953v1
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Salicide-like process for the formation of gate and source contacts in 4H-SiC TI-VJFETS11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Conference papers
hal-02066431v1
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Top-down 3C-SiC NWFETs40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal
Conference papers
hal-01698956v1
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capacitances in 4H-SiC TI-VJFETs11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Conference papers
hal-02066426v1
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩
Conference papers
hal-01936580v1
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Modelling of 4H-SiC VJFETs with Self-Aligned Contacts16th International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Catane, Italy. pp.913-916
Conference papers
hal-02025247v1
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Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Conference papers
hal-02008440v1
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4H-SiC VJFETs with Self-Aligned ContactsECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Conference papers
hal-02133681v1
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Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC14th International Conference on Silicon Carbide and Related Materials 2011, Sep 2011, Cleveland, United States. pp.589-592
Conference papers
hal-02025470v1
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Schottky barrier 3C-SiC nanowire field effect transistor ECSCRMEuropean Conference on Silicon Carbide and Related, 2010, Oslo, Norway. pp.613-616
Conference papers
hal-00604274v1
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Electrical transport properties of catalyst-free grown 3C-SiC nanowiresInternational workshop on 3C-SiC hetero-epitaxy (Hetero-SiC '09), May 2009, Catania, Italy
Conference papers
hal-00603791v1
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Photoemission of 4H-SiC pin diodes epitaxied by the sublimation methodInternational Conf. on SiC and Related Materials ICSCRM'05, 2006, France. pp.391-394
Conference papers
hal-00146595v1
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Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin DiodesEuropean Conference on Silicon Carbide and Related Materials, 2006, Newcastle upon Tyne, United Kingdom. pp.909-912
Conference papers
hal-00149053v1
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Transistor à effet de champ à jonction et procédé de fabrication associéFrance, Patent n° : Transistor à effet de champ à jonction et procédé de fabrication associé ; PCT/EP2024/075138. CMNE. 2024
Patents
hal-04894005v1
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4H-SiC p-Type Doping Determination from Secondary Electrons Imaging12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Materials Science Forum, 963, Trans Tech Publications Inc., pp.328-331, 2019, ⟨10.4028/www.scientific.net/MSF.963.328⟩
Proceedings
hal-04832035v1
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