MG

Magali Gregoire

38
Documents

Publications

Publications

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Influence of the annealing schemes on the formation and stability of Ni(Pt)Si thin films: partial, laser, total, and unique anneal

Fabriziofranco Morris Anak , Andrea Campos , Magali Gregoire , Adrien Estellon , Marc Lombard et al.
Materials Science in Semiconductor Processing, 2025, 184, pp.108806. ⟨10.1016/j.mssp.2024.108806⟩
Article dans une revue hal-04789456 v1
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C54-TiSi$_2$ formation using nanosecond laser annealing of A-Si/Ti/A-Si stacks

Réda Guelladress , Sébastien Kerdilès , Mélanie Dartois , Chiara Sabbione , Magali Gregoire et al.
Thin Solid Films, 2024, 798, pp.140386. ⟨10.1016/j.tsf.2024.140386⟩
Article dans une revue cea-04770913 v1

Influence of the annealing schemes on the formation and stability of Ni(Pt)Si thin films: Partial, laser, total, and one-step annealings

Fabriziofranco Morris Anak , Andréa Campos , Magali Grégoire , Adrien Estellon , Marc Lombard et al.
Materials Science in Semiconductor Processing, 2024, 184, pp.108806. ⟨10.1016/j.mssp.2024.108806⟩
Article dans une revue cea-04765828 v1
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On the influence of Ni(Pt)Si thin film formation on agglomeration threshold temperature and its impact on 3D imaging technology integration

M. Grégoire , F. Morris Anak , S. Verdier , K. Dabertrand , S. Guillemin et al.
Microelectronic Engineering, 2023, 271-272, pp.111937. ⟨10.1016/j.mee.2023.111937⟩
Article dans une revue hal-04285798 v1

Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices

Flore Boyer , Karen Dabertrand , Nicolas Bernier , Christophe Jany , Patrice Gergaud et al.
Materials Science in Semiconductor Processing, 2023, 154, pp.107199. ⟨10.1016/j.mssp.2022.107199⟩
Article dans une revue hal-04742893 v1
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Influence of Si surface preparation on CoSi2 formation and agglomeration

Andréa Newman , Andrea Campos , David Pujol , Pascal Fornara , Magali Gregoire et al.
Materials Science in Semiconductor Processing, 2023, 162, pp.107488. ⟨10.1016/j.mssp.2023.107488⟩
Article dans une revue hal-04285750 v1

Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

E. Brezza , F. Deprat , C. de Buttet , A. Gauthier , M. Gregoire et al.
Solid-State Electronics, 2023, 204, pp.108654. ⟨10.1016/j.sse.2023.108654⟩
Article dans une revue hal-04084450 v1
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Impact of the pre amorphization by Ge implantation on Ni$_{0.9}$Pt$_{0.1}$ silicide

C. Delwail , S. Joblot , F. Mazen , F. Abbate , L. Lachal et al.
Microelectronic Engineering, 2022, 254, pp.111705. ⟨10.1016/j.mee.2021.111705⟩
Article dans une revue hal-03863804 v1
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Platinum redistribution in the Ni0.9Pt0.1/InP system: Impact on solid-state reaction and layer morphology

F. Boyer , K. Dabertrand , P. Gergaud , M. Grégoire , Quentin Rafhay et al.
Materials Science in Semiconductor Processing, 2021, 128, pp.105731. ⟨10.1016/j.mssp.2021.105731⟩
Article dans une revue hal-04742836 v1
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IMPACT OF NANOSECOND LASER ENERGY DENSITY ON THE C40-TiSi2 FORMATION AND C54-TiSi2 TRANSFORMATION TEMPERATURE.

Laura Esposito , S. Kerdiles , M. Gregoire , P. Benigni , K. Dabertrand et al.
Journal of Applied Physics, 2020, 128 (8), pp.085305. ⟨10.1063/5.0016091⟩
Article dans une revue hal-02922876 v1
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Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers

Flore Boyer , Patrice Gergaud , Karen Dabertrand , Denis Mariolle , Christophe Jany et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (1), pp.012209. ⟨10.1116/1.5128554⟩
Article dans une revue hal-04743063 v1

Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III–V Devices on a 300-mm Platform

F. Boyer , K. Dabertrand , C. Jany , P. Gergaud , N. Coudurier et al.
IEEE Transactions on Electron Devices, 2020, 67 (6), pp.2495-2502. ⟨10.1109/TED.2020.2985766⟩
Article dans une revue hal-04743053 v1
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Redistribution of phosphorus during Ni 0.9 Pt 0.1 -based silicide formation on phosphorus implanted Si substrates

M. Lemang , Ph. Rodriguez , F. Nemouchi , M. Juhel , M. Grégoire et al.
Journal of Applied Physics, 2018, 123 (8), ⟨10.1063/1.5020123⟩
Article dans une revue hal-01728691 v1

Redistribution of phosphorus during NiPtSi formation on in-situ doped Si

M. Lemang , Ph. Rodriguez , M. Gregoire , M. Juhel , B. Saidi et al.
Microelectronic Engineering, 2018, 202, pp.25-30. ⟨10.1016/j.mee.2018.10.005⟩
Article dans une revue hal-02403309 v1

Boron atomic-scale mapping in advanced microelectronics by atom probe tomography

Robert Estivill , Marc Juhel , Germain Servanton , Magali Grégoire , Fréderic Lorut et al.
Applied Physics Letters, 2017, 110, pp.252105. ⟨10.1063/1.4989676⟩
Article dans une revue hal-01765934 v1

Thermal stability of Ni1-uPtu (0 < u < 0.15) germanosilicide

E. Bourjot , M. Gregoire , F. Nemouchi , Dominique Mangelinck
Journal of Applied Physics, 2017, 121 (13), ⟨10.1063/1.4979529⟩
Article dans une revue hal-01694204 v1
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Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Julien Borrel , Louis Hutin , Donato Kava , Rémy Gassilloud , Nicolas Bernier et al.
Japanese Journal of Applied Physics, 2017, 56 (4), pp.04CB02. ⟨10.7567/JJAP.56.04CB02⟩
Article dans une revue hal-03325004 v1
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Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part I

Julien Borrel , Louis Hutin , Olivier Rozeau , Marie-Anne Jaud , Sebastien Martinie et al.
IEEE Transactions on Electron Devices, 2016, 63 (9), pp.3413-3418. ⟨10.1109/TED.2016.2590836⟩
Article dans une revue hal-03325007 v1
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Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II

Julien Borrel , Louis Hutin , Olivier Rozeau , Marie-Anne Jaud , Sebastien Martinie et al.
IEEE Transactions on Electron Devices, 2016, 63 (9), pp.3419-3423. ⟨10.1109/TED.2016.2590826⟩
Article dans une revue hal-03325006 v1

Atomic Scale Investigation of Arsenic Segregation in High-k Metal Gate Stacks

Robert Estivill , Marc Juhel , Magali Gregoire , Adeline Grenier , Vincent Delaye et al.
Scripta Materialia, 2016, 113, pp.231-235. ⟨10.1016/j.scriptamat.2015.10.034⟩
Article dans une revue hal-01954200 v1

Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions

E. Bourjot , Magali Putero , C. Perrin-Pellegrino , P. Gergaud , Magali Gregoire et al.
Microelectronic Engineering, 2014, 120, pp.163-167. ⟨10.1016/j.mee.2013.12.009⟩
Article dans une revue hal-01951263 v1

Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology

C. Fenouillet-Beranger , P. Perreau , T. Benoist , C. Richier , S. Haendler et al.
Solid-State Electronics, 2013, 88, pp.15-20,. ⟨10.1016/j.sse.2013.04.008⟩
Article dans une revue istex hal-01002051 v1

Enhanced RF Switch Performance in RFSOI Technology: Achieving 74 fs R ON ·C OFF and 3.3 V RFV MAX on Thinned SOI

Thomas Bordignon , Luca Lucci , Thibaud Fache , Clément Pribat , Magali Grégoire et al.
2024 IEEE European Solid-State Electronics Research Conference (ESSERC), Sep 2024, Bruges, Belgium. pp.448-451, ⟨10.1109/ESSERC62670.2024.10719593⟩
Communication dans un congrès hal-04786482 v1

Si capacitive modulator integration in a 300mm silicon photonics platform using different annealing conditions

Ismael Charlet , Lucas Deniel , Pablo Acosta-Alba , Yohan Desieres , Sylvain Guerber et al.
Silicon Photonics XVI, Mar 2021, Online Only, France. pp.116910R, ⟨10.1117/12.2577806⟩
Communication dans un congrès cea-04948644 v1
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Impact of Nanosecond Laser Annealing on the Formation of Titanium Silicides

Laura Esposito , Sebastien Kerdiles , Magali Gregoire , Dominique Mangelinck
2021 20th International Workshop on Junction Technology (IWJT), Jun 2021, Kyoto, France. pp.1-6, ⟨10.23919/IWJT52818.2021.9609410⟩
Communication dans un congrès hal-03454117 v1

Nickel-based CMOS-compatible contacts on p-In 0.53 Ga 0.47 As for III-V / silicon hybrid lasers

F. Boyer , K. Dabertrand , P. Gergaud , N. Coudurier , F. Nemouchi et al.
2020 IEEE International Interconnect Technology Conference (IITC), Oct 2020, San Jose, France. pp.121-123, ⟨10.1109/IITC47697.2020.9515625⟩
Communication dans un congrès hal-04742876 v1

28nm FDSOI CMOS Technology (FEOL and BEOL) Thermal Stability for 3D Sequential Integration: Yield and Reliability Analysis

C. Cavalcante , C. Fenouillet-Beranger , P. Batude , X. Garros , X. Federspiel et al.
2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. pp.1-2, ⟨10.1109/VLSITechnology18217.2020.9265075⟩
Communication dans un congrès cea-04521647 v1

Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs Ohmic Contacts for Hybrid III-V / Si Lasers

F. Boyer , C. Jany , J. da Fonseca , B. Szelag , V. Amalberg et al.
2019 IEEE 16th International Conference on Group IV Photonics (GFP), Aug 2019, Singapore, Singapore. pp.1-2, ⟨10.1109/GROUP4.2019.8926115⟩
Communication dans un congrès hal-04743098 v1

Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes: projected benefits and remaining challenges

Julien Borrel , Louis Hutin , Helen Grampeix , Emmanuel Nolot , Magali Tessaire et al.
IWJT 2016 - 16th International Workshop on Junction Technology, May 2016, Shanghai, China. pp.14-19
Communication dans un congrès hal-03325000 v1

Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts

Julien Borrel , L. Hutin , H. Grampeix , E. Nolot , E. Ghegin et al.
IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. pp.140-141, ⟨10.1109/SNW.2016.7578022⟩
Communication dans un congrès hal-03325002 v1

Nouvelle technologie de contact pour CMOS FD-SOI 10nm et en deçà le contact dipolaire

Julien Borrel , Louis Hutin , Magali Grégoire , Fabrice Nemouchi , Olivier Rozeau et al.
17es Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p
Communication dans un congrès hal-01020275 v1

Comparison of Radio Frequency Physical Vapor Deposition target material used for LaOx cap layer deposition in 32nm

S. Baudot , P. Caubet , M. Grégoire , R. A. Bianchi , R. Pantel et al.
Int. Conf. materials for advanced metallization, MAM 2010, 2010, Malines, Belgium
Communication dans un congrès hal-00604574 v1

Mechanical Properties and reliability of Copper thin films. Some aspects related to stress voiding and interconnections

M. Ignat , M. Swain , M. Gregoire
Quality and Reliability CCF 2006, 2006, Sinaia, Romania. pp.414-423
Communication dans un congrès hal-00149038 v1

Microstructure and Mechanical Properties of ECD and PVD Cu thin films

M. Ignat , F. Robaud , M. Swain , M. Gregoire
Vth Institute of Materials International Conference(East Asia) –MP3, 2006, Singapore, pp.122-125
Communication dans un congrès hal-00149034 v1

Microstructure and Mechanical Properties of ECD and PVD Cu thin films

M. Ignat , F. Robaud , M. Swain , M. Gregoire
Vth Institute of Materials International Conference(East Asia) –MP3, 2006, Singapore, Singapore
Communication dans un congrès hal-00140909 v1

Mechanical Properties and reliability of Copper thin films

M. Ignat , M. Swain , M. Gregoire
Quality and Reliability CCF 2006, 2006, Sinaia, Romania
Communication dans un congrès hal-00140907 v1

Microstructure and mechanical properties of PVD and ECD Cu thin films

M. Ignat , F. Robaud , M. Swain , M. Gregoire
K. A. Khor, R. V. Ramanujan, C. P. Ooi, J. H. Zhao, W. Zhou, L. G. Yu. Materials Processing for Properties and Performance, Materials Processing for Properties and Performance, pp.122-125, 2006
Chapitre d'ouvrage hal-00149047 v1