Mihai Lazar

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Publications

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Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Brenda Fosso-Sob , Dominique Planson , Pascal Bevilacqua , Camille Sonneville et al.

Key Engineering Materials, 2025, 1021, pp.1-6. ⟨10.4028/p-T0Vjdb⟩

Article dans une revue hal-05293324v1
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Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Pierre Brosselard , Mihai Lazar et al.

Key Engineering Materials, 2025, 1023, pp.1-6. ⟨10.4028/p-0v5tyE⟩

Article dans une revue hal-05293312v1
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Integration of bright color centers into arrays of silicon carbide nanopillars

Enora Vuillermet , N. Bercu , S. Kochtcheev , M. Lazar

Applied Physics Letters, 2025, Defects in Solids for Quantum Technologies, 127 (2), pp.024003. ⟨10.1063/5.0255612⟩

Article dans une revue hal-05169989v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Camille Sonneville et al.

Solid State Phenomena, 2024, 360, pp.127-131. ⟨10.4028/p-sj87Lx⟩

Article dans une revue hal-04677726v1
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Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices

Enora Marion Vuillermet , Kuan Ting Wu , Anaël Sédilot , Regis Deturche , Nicolas Bercu et al.

Solid State Phenomena, 2024, 358, pp.13-21. ⟨10.4028/p-sUIlP5⟩

Article dans une revue hal-04211449v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , Frédéric Richardeau et al.

Solid State Phenomena, 2024, 358, pp.23-30. ⟨10.4028/p-pzTJ4o⟩

Article dans une revue hal-04697223v1
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Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing

Fulvio Mazzamuto , Zeinab Chehadi , Fabien Roze , Mathieu Opprecht , Atul Gupta et al.

Solid State Phenomena, 2024, 359, pp.21-28. ⟨10.4028/p-7T0Wv7⟩

Article dans une revue hal-04796908v1
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Infrared photoinduced force near-field spectroscopy of silicon carbide

Kuan-Ting Wu , Youssef El-Helou , Elise Usureau , Enora Vuillermet , Michel Kazan et al.

Applied Surface Science, 2024, 684, pp.161798. ⟨10.1016/j.apsusc.2024.161798⟩

Article dans une revue hal-04796916v1
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High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields

Elise Usureau , Enora Marion Vuillermet , Mihai Lazar , Aurore Andrieux , Alexandre Jacquemot

Solid State Phenomena, 2023, 343, pp.21-28. ⟨10.4028/p-w0ryrj⟩

Article dans une revue hal-04170908v1
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Cathodoluminescence Characterization of Point Defects Generated through Ion Implantations in 4H-SiC

Enora Marion Vuillermet , Nicolas Bercu , Florence Etienne , Mihai Lazar

Coatings, 2023, 13 (6), pp.992. ⟨10.3390/coatings13060992⟩

Article dans une revue hal-04170818v1
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Light Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature Annealing

Enora Marion Vuillermet , Elise Usureau , Mihai Lazar , Regis Deturche

Materials Science Forum, 2023, 1089, pp.37-44. ⟨10.4028/p-lu37l6⟩

Article dans une revue hal-04170897v1
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SiC Plasma and Electrochemical Etching for Integrated Technology Processes

Nour Beydoun , Mihai Lazar , Xavier Gassmann

Romanian Journal of Information Science and Technology, 2023, 2023 (2), pp.238-246. ⟨10.59277/ROMJIST.2023.2.10⟩

Article dans une revue hal-04303004v1
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Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.

Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩

Article dans une revue hal-04276812v1
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KPFM -Raman spectroscopy coupled technique for the characterization of wide bandgap semiconductor devices

Nicolas Bercu , Mihai Lazar , Olivier Simonetti , Pierre-Michel Adam , Mélanie Brouillard et al.

Materials Science Forum, 2022, 1062, pp.330-334. ⟨10.4028/p-c35702⟩

Article dans une revue hal-03702846v1
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Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis

Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson et al.

Materials Science Forum, 2022, 1062, pp.293-297. ⟨10.4028/p-5p0qg2⟩

Article dans une revue hal-03702821v1
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Development of SiC reliability study tool

Tanguy Phulpin , Alexandre Jaffré , J Alvarez , M. Lazar

Solid State Electronics Letters, 2019, 1 (2), pp.131-139. ⟨10.1016/j.ssel.2020.01.002⟩

Article dans une revue hal-02486075v1
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Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC

Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Loïc Michel

Romanian Journal of Information Science and Technology, 2019, 22 (2), pp.103-110

Article dans une revue hal-02405784v1
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Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

Jean-François Mogniotte , Dominique Tournier , Christophe Raynaud , Mihai Lazar , Dominique Planson et al.

IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩

Article dans une revue hal-01864533v1
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SiC integrated circuits for smart power converter

J F Mogniotte , Mihai Lazar , Christophe Raynaud , Dominique Planson , B Allard

Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399

Article dans une revue hal-04277111v1
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Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

Julien Pezard , Véronique Soulière , Mihai Lazar , Naoufel Haddour , François Buret et al.

Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩

Article dans une revue hal-01644735v1
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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p<sup>++</sup> Emitters

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski et al.

Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩

Article dans une revue hal-01648360v1

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Gabriel Ferro , Selsabil Sejil , Mihai Lazar , D. Carole , C. Brylinski et al.

Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩

Article dans une revue hal-01615190v1

4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer

Fatima Issa , Laurent Ottaviani , Dora Szalkai , Lvermeer Vermeeren , Vanessa Vervisch et al.

IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1976-1980. ⟨10.1109/TNS.2016.2565439⟩

Article dans une revue hal-03350099v1
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Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

Thi Thanh Huyen Nguyen , Mihai Lazar , Jean-Louis Augé , Hervé Morel , Luong Viet Phung et al.

Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩

Article dans une revue hal-01391838v1
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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud et al.

IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩

Article dans une revue hal-01387992v1

4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer

Fatima Issa , Laurent Ottaviani , Dora Szalkai , Lvermeer Vermeeren , Vanessa Vervisch et al.

IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1976 - 1980. ⟨10.1109/TNS.2016.2565439⟩

Article dans une revue hal-01389631v1
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Optimization of VLS Growth Process for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski et al.

Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩

Article dans une revue hal-01388031v1

Realization of a graphene gate field effect transistor for electrochemical detection and biosensors

Julien Pézard , Mihai Lazar , Naoufel Haddour , Claude Botella , Pascale Roy et al.

Thin Solid Films, 2016, ⟨10.1016/j.tsf.2016.04.031⟩

Article dans une revue istex hal-01389621v1

Improvements in Realizing 4H-SiC Thermal Neutron Detectors

F. Issa , V. Vervisch , L. Ottaviani , D. Szalkai , L. Vermeeren et al.

EPJ Web of Conferences, 2016, 106, ⟨10.1051/epjconf/201610605004⟩

Article dans une revue hal-01391841v1

Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature

D. Szalkai , R. Ferone , F. Issa , A. Klix , Mihai Lazar et al.

IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1491 - 1498. ⟨10.1109/TNS.2016.2522921⟩

Article dans une revue hal-01389627v1
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Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti<sub>3</sub>SiC<sub>2</sub> Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud et al.

Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩

Article dans une revue hal-01388027v1
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VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.

Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩

Article dans une revue hal-01387983v1

Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors

Julien Pezard , Jérémy Lhuillier , Zakarya El-Friach , Véronique Soulière , Bertrand Vilquin et al.

Materials Science Forum, 2015, 821-823, pp.941 - 944. ⟨10.4028/www.scientific.net/MSF.821-823.941⟩

Article dans une revue hal-01391855v1

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , B. Toury et al.

Applied Surface Science, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩

Article dans une revue istex hal-01391845v1

Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation

Fatima Issa , Laurent Ottaviani , Vanessa Vervisch , Dora Szalkai , Ludo Vermeeren et al.

Materials Science Forum, 2015, 821-823, pp.875 - 878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩

Article dans une revue hal-01391850v1
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2D Electric field imagery in 4H-SiC power diodes using OBIC technique

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier et al.

European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩

Article dans une revue istex hal-01387989v1
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P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole et al.

Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342

Article dans une revue hal-01626119v1

4H-SiC P<sup>+</sup>N UV Photodiodes for Space Applications

B. Berenguier , Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Frédéric Milesi et al.

Materials Science Forum, 2015, 821-823, pp.644 - 647. ⟨10.4028/www.scientific.net/MSF.821-823.644⟩

Article dans une revue hal-01391847v1
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The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

Mihai Lazar , Farah Laariedh , Pierre Cremillieu , Dominique Planson , Jean-Louis Leclercq

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩

Article dans une revue hal-01391844v1
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A Study on the Chemistry of Epitaxial Ti<sub>3</sub>SiC<sub>2</sub> Formation on 4H-SiC Using Al-Ti Annealing

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Berangère Toury et al.

Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩

Article dans une revue hal-01391858v1
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4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantin Vamvoukakis et al.

Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩

Article dans une revue hal-01391852v1

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

Arthur Vo-Ha , Mickael Rebaud , Mihai Lazar , Alexandre Tallaire , Véronique Soulière et al.

Materials Science Forum, 2014, 806, pp.33 - 37. ⟨10.4028/www.scientific.net/MSF.806.33⟩

Article dans une revue hal-01391865v1
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Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

Nicolas Thierry-Jebali , Mihai Lazar , A. Vo-Ha , D. Carole , V. Soulière et al.

Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩

Article dans une revue hal-01987147v1

Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron

F. Issa , V. Vervisch , L. Ottaviani , D. Szalkai , L. Vermeeren et al.

IEEE Transactions on Nuclear Science, 2014, 61 (4), pp.2105-2111. ⟨10.1109/TNS.2014.2320943⟩

Article dans une revue hal-03350134v1

4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation

B. Bérenguier , L. Ottaviani , S. Biondo , O. Palais , M. Lazar et al.

MRS Online Proceedings Library, 2014, 1693, ⟨10.1557/opl.2014.565⟩

Article dans une revue hal-03350144v1

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

N. Thierry-Jebali , A. Vo-Ha , D. Carole , Mihai Lazar , Gabriel Ferro et al.

Applied Physics Letters, 2013, 102 (21), ⟨10.1063/1.4809570⟩

Article dans une revue hal-01627796v1

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali et al.

Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩

Article dans une revue hal-00803058v1
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The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC

Farah Laariedh , Mihai Lazar , P. Cremillieu , J. Penuelas , J-L Leclercq et al.

Semiconductor Science and Technology, 2013, 28 (4), ⟨10.1088/0268-1242/28/4/045007⟩

Article dans une revue hal-01627844v1

p-Doped SiC Growth on Diamond Substrate by VLS Transport

Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet et al.

Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩

Article dans une revue hal-01627777v1

Electrical Characterization of PiN Diodes with p<sup>+</sup> Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo Ha , Davy Carole , Véronique Soulière et al.

Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩

Article dans une revue hal-01627792v1

Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase

A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet et al.

Diamond and Related Materials, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩

Article dans une revue istex hal-02863887v1

Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet et al.

Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩

Article dans une revue istex hal-01627830v1

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais et al.

Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩

Article dans une revue hal-04050522v1

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson

Materials Science Forum, 2012, 711, pp.169-173. ⟨10.4028/www.scientific.net/MSF.711.169⟩

Article dans une revue hal-04050541v1
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600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson et al.

Materials Science Forum, 2012

Article dans une revue hal-02126341v1

Buried selective growth of p-doped SiC by VLS epitaxy

Davy Carole , Stéphane Berckmans , Arthur Vo-Ha , Mihai Lazar , Dominique Tournier et al.

Materials Science Forum, 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩

Article dans une revue hal-00803061v1
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4H-SiC P<sup>+</sup>N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine et al.

Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩

Article dans une revue hal-02275699v1
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Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

Nicolas Thierry-Jebali , Jawad Hassan , Mihai Lazar , Dominique Planson , Edwige Bano et al.

Applied Physics Letters, 2012, 101 (22), 222111, 4 p. ⟨10.1063/1.4768440⟩

Article dans une revue hal-00769905v1

Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate

Jean Lorenzzi , Romain Esteve , Mihai Lazar , Dominique Tournier , Davy Carole et al.

Materials Science Forum, 2012, 717-720, pp.165-168. ⟨10.4028/www.scientific.net/MSF.717-720.165⟩

Article dans une revue hal-00803063v1

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz et al.

Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩

Article dans une revue hal-00803059v1
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SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

Mihai Lazar , François Jomard , Duy Minh M Nguyen , Christophe Raynaud , Gontran Pâques et al.

Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩

Article dans une revue hal-02166414v1

4H-silicon carbide thin junction based ultraviolet photodetectors

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Vincent Le Borgne et al.

Thin Solid Films, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩

Article dans une revue istex hal-00747356v1
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard

Materials Science Forum, 2011, 679-680, pp.477-480. ⟨10.4028/www.scientific.net/MSF.679-680.477⟩

Article dans une revue hal-04343373v1
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Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates

Elias Haddad , Christian Martin , Charles Joubert , Bruno Allard , Maher Soueidan et al.

Advanced Materials Research, 2011, 324, pp.294-297. ⟨10.4028/www.scientific.net/AMR.324.294⟩

Article dans une revue hal-00672240v1

Experimental determination of impact ionization coefficients in 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Nicolas Dheilly , Mihai Lazar , Dominique Tournier et al.

Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩

Article dans une revue istex hal-00661429v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.

Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩

Article dans une revue hal-00799902v1

3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt

J. Lorenzzi , Mihai Lazar , Dominique Tournier , N. Jegenyes , D. Carole et al.

Crystal Growth & Design, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩

Article dans une revue hal-00786365v1

State of the art of high temperature power electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.

Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩

Article dans une revue istex hal-00597432v1
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Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

Sombel Diaham , Marie-Laure Locatelli , Thierry Lebey , Christophe Raynaud , Mihai Lazar et al.

Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.695-698. ⟨10.4028/www.scientific.net/MSF.615-617.695⟩

Article dans une revue hal-04368204v1
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Process Optimization for High Temperature SiC Lateral Devices

Maher Soueidan , Mihai Lazar , Duy Minh Nguyen , Dominique Tournier , Christophe Raynaud et al.

Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.585-588. ⟨10.4028/www.scientific.net/MSF.615-617.585⟩

Article dans une revue hal-04368215v1

Optical beam induced current measurements: principles and applications to SiC device characterization

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard et al.

Physica Status Solidi A (applications and materials science), 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩

Article dans une revue istex hal-00398971v1
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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode

Heu Vang , Sigo Scharnholz , Christophe Raynaud , Mihai Lazar , Gontran Pâques et al.

Materials Science Forum, 2008, MATERIALS SCIENCE FORUM, 600-603, pp.1011-1014. ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩

Article dans une revue hal-04368150v1

Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Heu Vang , Dominique Planson

Materials Science Forum, 2008, Materials Science Forum, 600-603, pp.639-642. ⟨10.4028/www.scientific.net/MSF.600-603.639⟩

Article dans une revue hal-00391560v1
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1.2 kV pin diodes with SiCrystal epiwafer

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu et al.

Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.901-904. ⟨10.4028/www.scientific.net/MSF.556-557.901⟩

Article dans une revue hal-04369138v1

Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

Maher Soueidan , Gabriel Ferro , Christophe Jacquier , Philippe Godignon , J. Pezoldt et al.

Diamond and Related Materials, 2007, 16, pp.37-45. ⟨10.1016/j.diamond.2006.03.015⟩

Article dans une revue istex hal-00188186v1
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Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremillieu et al.

Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.611-614. ⟨10.4028/www.scientific.net/MSF.556-557.611⟩

Article dans une revue hal-04369331v1
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Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.

Superlattices and Microstructures, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩

Article dans une revue hal-00179458v1
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Composants de puissance en SiC. Etat de l'art

Dominique Planson , Christophe Raynaud , Pierre Brosselard , Dominique Bergogne , Mihai Lazar et al.

European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611

Article dans une revue hal-04371563v1
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Ni-Al ohmic contact to p-type 4H-SiC

Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.

Superlattices and Microstructures, 2006, 40 (4-6), pp.626-631

Article dans une revue hal-00141426v1

Edge termination strategies for a 4 kV 4H-SiC thyristor

Pierre Brosselard , Dominique Planson , Sigo Scharnholz , Christophe Raynaud , V. Zorngiebel et al.

Solid-State Electronics, 2006, 50 (7-8), pp.1183-1188

Article dans une revue hal-00140104v1
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P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , Christophe Jacquier , Christiane Dubois , Christophe Raynaud , Gabriel Ferro et al.

Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩

Article dans une revue hal-04362494v1
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A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques et al.

Materials Science Forum, 2005, 483-485, pp.1005-1008. ⟨10.4028/www.scientific.net/MSF.483-485.1005⟩

Article dans une revue hal-04345858v1
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Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement

Bruno Allard , Gérard Coquery , Laurent Dupont , Zoubir Khatir , Mihai Lazar et al.

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩

Article dans une revue hal-01702019v1

OBIC analysis for 1.3 kV 6H-SiC p(+)n planar bipolar diodes protected by Junction Termination Extension

Christophe Raynaud , S. Wang , Dominique Planson , Mihai Lazar , Jean-Pierre Chante

Diamond and Related Materials, 2004, 13 (9), pp.1697-1703

Article dans une revue hal-00140107v1
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Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , Jean-Pierre Chante et al.

Materials Science Forum, 2004, 457-460, pp.1129-1132. ⟨10.4028/www.scientific.net/MSF.457-460.1129⟩

Article dans une revue hal-04092535v1
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The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

Mihai Lazar , G.C. Cardinali , Christophe Raynaud , Antonella Poggi , Dominique Planson et al.

Materials Science Forum, 2004, 457-460, pp.1025-1028. ⟨10.4028/www.scientific.net/MSF.457-460.1025⟩

Article dans une revue hal-04345830v1

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

Mihai Lazar , Christophe Raynaud , Dominique Planson , Jean-Pierre Chante , Marie-Laure Locatelli et al.

Journal of Applied Physics, 2003, 94 (5), pp.2992-2998

Article dans une revue hal-00140110v1
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OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante

Materials Science Forum, 2003, 433-436, pp.863-866. ⟨10.4028/www.scientific.net/MSF.433-436.863⟩

Article dans une revue hal-04091213v1

Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments

Laurent Ottaviani , Mihai Lazar , Marie-Laure Locatelli , Dominique Planson , Jean-Pierre Chante et al.

Materials Science and Engineering: B, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩

Article dans une revue istex hal-00140116v1
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Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

K. Isoird , Mihai Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.

Materials Science Forum, 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩

Article dans une revue hal-02151720v1

Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements

Christophe Raynaud , Karine Isoird , Mihai Lazar , Cm Johnson , N. Wright

Journal of Applied Physics, 2002, 91 (12), pp.9841-9847

Article dans une revue hal-00141477v1

Annealing Studies of Al-implanted 6H-SiC in an Induction Furnace

L. Ottaviani , M. Lazar , Marie-Laure Locatelli , J.P. Chante , V. Heera et al.

Materials Science and Engineering: B, 2002, 91-92, pp.325-328

Article dans une revue hal-00084105v1
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A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Mihai Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird et al.

Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩

Article dans une revue hal-02151714v1

Investigation of Al-implanted 6H-and 4H-SiC layers after fast heating rate annealings

Laurent Ottaviani , Mihai Lazar , Marie-Laure Locatelli , Yves Monteil , V. Heera et al.

Applied Surface Science, 2001, 184 (1-4), pp.330-335

Article dans une revue hal-00141498v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.

Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩

Article dans une revue hal-02151710v1
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Study of 6H-SiC high voltage bipolar diodes under reverse biases

Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud et al.

Applied Surface Science, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩

Article dans une revue istex hal-00140118v1

Experimental characterization of a 4H-SiC high voltage current limiting device

F. Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar et al.

Applied Surface Science, 2001, 184 (1-4), pp.404-407

Article dans une revue hal-00140117v1
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Improved Annealing Process for 6H-SiC p<sup>+</sup>-n Junction Creation by Al Implantation

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Bruno Canut et al.

Materials Science Forum, 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩

Article dans une revue hal-02275720v1

Correlative Near-Field Characterizations with KPFM, sMIM and SCM to Characterize the Geometry of a N-Channel Failed SiC JFET

Rosine Coq Germanicus , Mahima Chaudhary , Enora Vuillermet , Mihai Lazar

ISTFA 2025, Nov 2025, Pasadena, France. pp.404-410, ⟨10.31399/asm.cp.istfa2025p0404⟩

Communication dans un congrès hal-05401738v1
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Brenda Fosso-Sob , Dominique Planson , Pascal Bevilacqua , Camille Sonneville et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128

Communication dans un congrès hal-04677764v1
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Formation of Highly Doped and Defect-Free P-Type Junctions in SiC by Using High Temperature Implants and UV-Laser Annealing

Louis Thuries , Zeinab Chehadi , Fulvio Mazzamuto , Mathieu Opprecht , Sébastien Kerdilès et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.712-713

Communication dans un congrès hal-04796873v1

SiC plasma etching technology processes for power and optoelectronic devices

Mihai Lazar , Nour Beydoun , Frédéric Marty , Elise Usureau , Enora Marion Vuillermet et al.

PESM 2024, IMEC Belgium, Jun 2024, Leuven (BE), Belgium

Communication dans un congrès hal-04797018v1
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Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers

Enora Vuillermet , Serguei Kochtcheev , Elise Usureau , Nicolas Bercu , Mihai Lazar

International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States

Communication dans un congrès hal-04796859v1

La gravure plasma, une étape critique dans la technologie SiC. Mécanismes physico-chimiques et applications

Mihai Lazar , Nour Beydoun , Frédéric Marty , Elise Usureau , Enora Vuillermet et al.

Journées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France

Communication dans un congrès hal-04799422v1
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Pierre Brosselard , Mihai Lazar et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592

Communication dans un congrès hal-04680725v1

Integration of micro-fabricated thermal flow rate sensors in a 4H-SiC substrate passivated by a MPECVD-grown diamond layer

Enora Vuillermet , Lionel Rousseau , Georges Hamaoui , Nizar Ben Moussa , E. Nefzaoui et al.

The 34th International Conference on Diamond and Carbon Materials (ICDCM 2024), Sep 2024, Dresde, Germany

Communication dans un congrès hal-05374887v1

Complementary SiC technology for integrated power and optoelectronic devices

Mihai Lazar

IEEE 2023 International semiconductor conference (CAS) - 46th edition, Oct 2023, Sinaia (Romania), Romania

Communication dans un congrès hal-04796961v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville et al.

ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy

Communication dans un congrès hal-04222211v1

Caractérisation du dopage de dispositifs de puissance en 4H-SiC par KPFM et spectroscopie µ-Raman

Anaël Sédilot , Enora Marion Vuillermet , Régis Deturche , Elise Usureau , Jérémie Béal et al.

24ème Forum des microscopies à sonde locale, Apr 2023, Obernai, France

Communication dans un congrès hal-04171760v1
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Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiC

Enora Marion Vuillermet , R. Haddadi , N. Bercu , L. Ottaviani , L. Giraudet et al.

IEEE 2023 International semiconductor conference (CAS) - 46th edition, NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES - IMT Bucharest; IEEE – Electron Devices Society, Oct 2023, Sinaia (Romania), Romania. pp.135-138, ⟨10.1109/CAS59036.2023.10303651⟩

Communication dans un congrès hal-04304522v1

Integrated technology developed in SiC and other wide-bandgap semiconductors for harsh environment power electronics, sensors and quantum nanophononics.

Mihai Lazar

Technological Horizons in Micro and Nanoelectronics. Contributions of Diaspora to the Integration of Romania in International Projects - IPCEI, PNRR, CHIPS ACT - April 11-13, 2023, Romanian Academy, Apr 2023, Timisoara, Romania

Communication dans un congrès hal-04304662v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , M. Lazar et al.

25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩

Communication dans un congrès hal-04203163v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

Ralph Makhoul , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau , Mihai Lazar et al.

IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩

Communication dans un congrès hal-04147862v1

Surface nano-structuration of 4H-SiC by controlled high-temperature annealing

Enora Marion Vuillermet , Elise Usureau , Régis Deturche , Mihai Lazar

The 6th International Workshop on Ultraviolet Materials and Devices (IWUMD 2023), Jun 2023, Metz, France

Communication dans un congrès hal-04171629v1

Recrystallization of thin 4H-SiC films deposited by PVD techniques, a way for new emerging fields

Enora Marion Vuillermet , Elise Usureau , François Jomard , Léa Le Joncour , Aurore Andrieux et al.

C'Nano 2023: The Nanoscience meeting, Centre national de compétences en Nanosciences, Mar 2023, Poitiers, France

Communication dans un congrès hal-04171807v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau et al.

ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy

Communication dans un congrès hal-04221605v1
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SiC structural characterization by non destructive near-field microscopy techniques

Kuan-Ting Wu , Enora Vuillermet , Elise Usureau , Youssef El-Helou , Michel Kazan et al.

2022 International Semiconductor Conference (CAS), Oct 2022, Poiana Brasov, Romania. pp.73-76, ⟨10.1109/CAS56377.2022.9934358⟩

Communication dans un congrès hal-03856554v1
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High quality single crystal recrystallization of thin 4H-SiC films deposed by PVD techniques, a way for new emerging fields

Elise Usureau , Enora Vuillermet , Mihai Lazar , Aurore Andrieux , Alexandre Jacquemot

19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland

Communication dans un congrès hal-03856621v1
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Enhancement of light extraction in 4H silicon carbide by nanostructuring the surface with high temperature annealing

Enora Vuillermet , Elise Usureau , Mihai Lazar , Régis Deturche

19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland

Communication dans un congrès hal-03856668v1
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Surface engineering for SiC etching with Ni electroplating masks

Nour Beydoun , Mihai Lazar , Xavier Gassmann

2022 International Semiconductor Conference (CAS), Oct 2022, Poiana Brasov, Romania. pp.119-122, ⟨10.1109/CAS56377.2022.9934701⟩

Communication dans un congrès hal-04303085v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.

2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩

Communication dans un congrès hal-03856578v1

KPFM - Raman spectroscopy coupled technique for the characterization of wide bandgap semiconductor devices

Nicolas Bercu , Mihai Lazar , Olivier Simonetti , Pierre-Michel Adam , Mélanie Brouillard et al.

13th European Conference on Silicon Carbide and Related Materials( ECSCRM2020-2021 ), Oct 2021, Tours, France

Communication dans un congrès hal-03702799v1

Ion Implantation Point Defect Engineering in SiC for Photonic Quantum Technology

Mathilde Brocheton , Mihai Lazar

13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020-2021 ), Oct 2021, Tours, France

Communication dans un congrès hal-03702808v1
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Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis

Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson et al.

ECSCRM2020-2021, Oct 2021, Tours, France

Communication dans un congrès hal-03410757v1
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SiC tools for reliability study

Tanguy Phulpin , Alexandre Jaffré , José Alvarez , Mihai Lazar

42nd edition of International Semiconductor Conference - CAS 2019, Oct 2019, Sinaia, Romania. ⟨10.1109/SMICND.2019.8923664⟩

Communication dans un congrès hal-02378321v1
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SiC lateral Schottky diode technology for integrated smart power converter

Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Bruno Allard , Dominique Planson

2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩

Communication dans un congrès hal-01864545v1

First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments

Jean-François Mogniotte , Mihai Lazar , Christophe Raynaud , Bruno Allard

CAS, Oct 2017, Sinaia, Romania. ⟨10.1109/SMICND.2017.8101191⟩

Communication dans un congrès hal-01646319v1
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski et al.

ECSCRM'16, Sep 2016, Halkidiki, Greece

Communication dans un congrès hal-02138729v1
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections

Julien Pezard , V. Souliere , Mihai Lazar , Naoufel Haddour , François Buret et al.

ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52

Communication dans un congrès hal-02138738v1

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

T. Nguyen-Bui , Mihai Lazar , Jean-Louis Augé , Hervé Morel , L. Phung et al.

International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy

Communication dans un congrès hal-02138529v1

Graphene Field Effect Transistors on SiC for High Speed and Bio-sensing Applications

Julien Pézard , Mihai Lazar , Bertrand Vilquin , Pedro Rojo Romeo , Naoufel Haddour et al.

JNTE (Journées Nationales des Technologies Emergentes), Nov 2015, Ecully, France

Communication dans un congrès hal-01946338v1
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase

Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , Christophe Raynaud et al.

ICSCRM, Oct 2015, Giardini Naxos, Italy

Communication dans un congrès hal-02138520v1

Realization of a single layer graphene field effect transistor

J. Pezard , Jérémy Lhuillier , Z. El-Friakh , V. Souliere , Pedro Rojo Romeo et al.

EMRS Spring Meeting, 2015, Lille, France

Communication dans un congrès hal-01489358v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.

ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61

Communication dans un congrès hal-02133686v1
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4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis et al.

ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75

Communication dans un congrès hal-02133681v1

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali , Arthur Vo-Ha , Davy Carole , Mihai Lazar , Gabriel Ferro et al.

HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩

Communication dans un congrès hal-01391861v1
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Davy Carole , Christian Brylinski , Dominique Planson et al.

Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States

Communication dans un congrès hal-02428659v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil et al.

CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩

Communication dans un congrès hal-01388019v1

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport

Arthur Vo-Ha , Mickael Rebaud , Davy Carole , Mihai Lazar , Alexandre Tallaire et al.

ICSCRM 2013, Sep 2013, Miyazaki, Japan. pp.234-237, ⟨10.4028/www.scientific.net/MSF.778-780.234⟩

Communication dans un congrès hal-02875458v1

Graphene on 4H-SiC for terahertz transistors and ferroelectric non-volatile memories

J. Pezard , Jérémy Lhuillier , Z. El-Friakh , V. Souliere , Pédro Rojo Romeo et al.

CSCRM, 2014, Grenoble, France

Communication dans un congrès hal-01489926v1
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On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Bérangère Toury et al.

ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63

Communication dans un congrès hal-02428741v1
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier et al.

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065307v1
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Dominique Planson , Pierre Brosselard , Karine Isoird , Mihai Lazar , Luong Viêt Phung et al.

CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩

Communication dans un congrès hal-01388002v1
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Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Berangere Toury-Pierre , Mihai Lazar et al.

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065327v1
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali et al.

ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p

Communication dans un congrès hal-04362529v1

p-type SiC growth on diamond substrate by VLS Transport

Arthur Vo-Ha , Davy Carole , Mihai Lazar , D. Tournier , François Cauwet et al.

ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p

Communication dans un congrès hal-04423301v1
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Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport

N Thierry-Jebali , Mihai Lazar , A Vo-Ha , D Carole , V Soulière et al.

International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan

Communication dans un congrès hal-04011693v1
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Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo-Ha , Davy Carole , Véronique Soulière et al.

Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p

Communication dans un congrès hal-04366810v1

Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais et al.

HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩

Communication dans un congrès hal-00661511v1

4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine et al.

CSCRM, Sep 2011, Cleveland, United States

Communication dans un congrès hal-00747301v1

Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate

Jean Lorenzzi , Romain Esteve , Mihai Lazar , Dominique Tournier , Davy Carole et al.

CSCRM, Sep 2011, Cleveland, United States

Communication dans un congrès hal-00747299v1
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Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC

Farah Laariedh , Mihai Lazar , Pierre Cremilleu , Jean-Louis Leclercq , Dominique Planson

HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩

Communication dans un congrès hal-00661507v1
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SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements

Mihai Lazar , François Jomard , Duy Minh Nguyen , Christophe Raynaud , Gontran Pâques et al.

ICSCRM, Sep 2011, Cleveland, United States

Communication dans un congrès hal-00747300v1

Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate

Jean Lorenzzi , Nicoletta Jegenyes , Mihai Lazar , Dominique Tournier , Davy Carole et al.

HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩

Communication dans un congrès hal-00747669v1
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600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson et al.

International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩

Communication dans un congrès hal-00747295v1

Buried selective growth of p-doped SiC by VLS epitaxy

Davy Carole , Stéphane Berckmans , Arthur Vo-Ha , Mihai Lazar , Dominique Tournier et al.

CSCRM, Sep 2011, Cleveland, United States

Communication dans un congrès hal-00747294v1

Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates

Elias Haddad , Christian Martin , Charles Joubert , Bruno Allard , Maher Soueidan et al.

CIMA, Mar 2011, Beyrouth, Lebanon. pp.Tu-P9

Communication dans un congrès hal-00787193v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.

CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD

Communication dans un congrès hal-00661500v1
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Réalisation de contact ohmique sur SiC-4H type P

Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson

JNRDM2011, May 2011, Paris, France

Communication dans un congrès hal-04560246v1

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz et al.

CSCRM, Sep 2011, Cleveland, United States

Communication dans un congrès hal-00747298v1

Investigation of 3C-SiC lateral growth on 4H-SiC MESAs

Jean Lorenzzi , Nikoletta Jegenyes , Mihai Lazar , Dominique Tournier , Francois Cauwet et al.

CSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩

Communication dans un congrès hal-00786369v1

High-temperature behavior of SiC power diodes

Cyril Buttay , Christophe Raynaud , Hervé Morel , Mihai Lazar , Gabriel Civrac et al.

EPE, Aug 2011, Birmingham, United Kingdom. pp.CD

Communication dans un congrès hal-00629225v1
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard

CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩

Communication dans un congrès hal-00661443v1
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization

Cyril Buttay , Amandine Masson , Jianfeng Li , Mark C. Johnson , Mihai Lazar et al.

HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7

Communication dans un congrès hal-00672619v1
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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Wilfried Vervisch , Julian Duchaine et al.

WOCSDICE, May 2011, Catania, Italy. pp.181

Communication dans un congrès hal-00661522v1
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State of the art of High Temperature Power Electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.

Microtherm, Jun 2009, Lodz, Poland. pp.8-17

Communication dans un congrès hal-00413349v1

Process Optimization for High Temperature SiC Lateral Devices

Maher Soueidan , Mihai Lazar , Duy Minh Nguyen , Dominique Tournier , Christophe Raynaud et al.

CSCRM, Sep 2008, Barcelone, Spain. pp.585-588, ⟨10.4028/www.scientific.net/MSF.615-617.585⟩

Communication dans un congrès hal-00391358v1

Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

Sombel Diaham , Marie-Laure Locatelli , Thierry Lebey , Christophe Raynaud , Mihai Lazar et al.

CSCRM, Sep 2008, Barcelone, Spain. pp.695-698, ⟨10.4028/www.scientific.net/MSF.615-617.695⟩

Communication dans un congrès hal-00391472v1

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson et al.

5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2

Communication dans un congrès hal-00372982v1

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode

Heu Vang , Sigo Scharnholz , Christophe Raynaud , Mihai Lazar , Gontran Pâques et al.

CSCRM, Oct 2007, Otsu, Japan. pp.1011-1014, ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩

Communication dans un congrès hal-00391553v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel et al.

13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩

Communication dans un congrès hal-00373016v1
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P

M Soueidan , Mihai Lazar , D. Tournier , Dominique Planson , Christophe Raynaud et al.

4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France

Communication dans un congrès hal-04606381v1

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremilleu et al.

CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩

Communication dans un congrès hal-00368931v1
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC

D M Nguyen , Christophe Raynaud , Mihai Lazar , H Vang , Dominique Planson

ICSCRM'2007, Oct 2007, Otsu, Japan

Communication dans un congrès hal-02961607v1

1.2 kV pin diodes with SiCrystal epiwafer

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremilleu et al.

CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.901-904, ⟨10.4028/www.scientific.net/MSF.556-557.901⟩

Communication dans un congrès hal-00358819v1

High energy N+ ion implantation in 4H–SiC

Erwan Oliviero , Mihai Lazar , A. Gardon , C. Peaucelle , A. Perrat et al.

15th International Conference on Ion Beam Modification of Materials, Sep 2006, Taormina, Italy. pp.265-269, ⟨10.1016/j.nimb.2007.01.256⟩

Communication dans un congrès istex in2p3-00170330v1
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Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu et al.

11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France

Communication dans un congrès hal-04618792v1
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Towards an integrated inverter based on lateral JFET SiC

J. Gié , Mihai Lazar , Dominique Planson , Dominique Bergogne , Pascal Bevilacqua et al.

4th CIPS, Jun 2006, Naples, Italy. pp.171-176

Communication dans un congrès hal-00413390v1

Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts

Gabriel Ferro , Maher Soueidan , Christophe Jacquier , Philippe Godignon , Th Stauden et al.

CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.275-278, ⟨10.4028/www.scientific.net/MSF.527-529.275⟩

Communication dans un congrès hal-00391581v1
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Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.

E-MRS 2006, May 2006, Nice, France. pp.3886392

Communication dans un congrès hal-03305997v1
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Ni-Al Ohmic contact to p-type 4H-SiC

Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu et al.

2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩

Communication dans un congrès hal-03316263v1
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Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés

Johnny Gié , Mihai Lazar , Pierre Brosselard , Dominique Planson , Christophe Raynaud

11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France

Communication dans un congrès hal-04619604v1
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Gravure RIE profonde du SiC pour la réalisation de composants de puissance

Heu Vang , T. Morel , F. Chaboud , Pierre Brosselard , Pierre Cremillieu et al.

3eme colloque sur les Matériaux du Génie Electrique, Dec 2005, Lyon, France

Communication dans un congrès hal-04620248v1
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HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES

Dominique Planson , Marie-Laure Locatelli , Mihai Lazar , Christophe Raynaud , Jean-Pierre Chante et al.

10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France

Communication dans un congrès hal-04621819v1
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SiC-based current limiter devices

Jean-Pierre Chante , Dominique Tournier , Dominique Planson , Christophe Raynaud , Mihai Lazar et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩

Communication dans un congrès hal-04032970v1
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P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , C Jacquier , Ch Dubois , Christophe Raynaud , G Ferro et al.

European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy

Communication dans un congrès hal-02953086v1
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Conception d'un transistor JFET 5 kV en SiC-4H

Pierre Brosselard , Dominique Planson , Léa Di Cioccio , Thierry Billon , Sigo Scharnholz et al.

10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France

Communication dans un congrès hal-04621465v1
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A 3.5 kV thyristor in 4H-SiC with a JTE periphery

Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques et al.

European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy

Communication dans un congrès hal-02953080v1
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The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.

M Lazar , G Cardinali , C Raynaud , A Poggi , Dominique Planson et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02941715v1
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , J.-P Chante et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02503456v1
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Electrothermal simulations of silicon carbide current limiting devices

Dominique Planson , J.P. Chante , M. Lazar , P. Brosselard , Christophe Raynaud et al.

2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩

Communication dans un congrès hal-02498210v1
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension

Christophe Raynaud , M. Lazar , Dominique Planson , J.-P Chante , Z. Sassi

International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02498145v1

Silicon Carbide specific components for power electronics system protection

J.-P Chante , Dominique Planson , Christophe Raynaud , Marie-Laure Locatelli , M. Lazar et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France

Communication dans un congrès hal-02503449v1
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Design and simulation of a planar anode GTO thyristor on SiC

Pierre Brosselard , Dominique Planson , Sigo Scharnholz , V. Zorngiebel , Mihai Lazar et al.

CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩

Communication dans un congrès hal-00410085v1
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC

Roberta Nipoti , Francesco Moscatelli , Andrea Scorzoni , Antonella Poggi , Gian Carlo Cardinali et al.

2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩

Communication dans un congrès hal-02485106v1
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante

European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden

Communication dans un congrès hal-02464381v1

Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier , Xavier Jorda , Josep Montserrat , Dominique Planson , Christophe Raynaud et al.

European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden

Communication dans un congrès hal-02458130v1

Study of 6H-SiC high voltage bipolar diodes under reverse biases

Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud et al.

European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France

Communication dans un congrès hal-03712596v1
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects

M. Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird et al.

ICSCRM, Oct 2001, Tsukuba, Japan

Communication dans un congrès hal-02476227v1
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4H-SiC bipolar power diodes realized by ion implantation

M. Lazar , Dominique Planson , K. Isoird , Marie-Laure Locatelli , Christophe Raynaud et al.

CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩

Communication dans un congrès hal-02145397v1

Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing

Mihai Lazar , Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud et al.

43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States

Communication dans un congrès hal-02275712v1
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization

K Isoird , M Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.

ICSCRM, Oct 2001, Tsukuba, Japan

Communication dans un congrès hal-02975956v1

Experimental characterization of a 4H-SiC high voltage current limiting device

Franck Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar et al.

European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France

Communication dans un congrès hal-03714731v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson et al.

European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72

Communication dans un congrès hal-02151711v1
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Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centers

Enora Vuillermet , Serguei Kochtcheev , Elise Usureau , Nicolas Bercu , Mihai Lazar

Journées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France

Poster de conférence hal-04618701v1
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Coupled non-destructive methods, Scanning Electron Microscopy, Kelvin Force Probe microscopy and µ-Raman to characterize doping in 4H-SiC power devices

Enora Vuillermet , Kuan-Ting Wu , Anaël Sédilot , Régis Deturche , Nicolas Bercu et al.

5e édition des French Photonics Days, Oct 2023, Strasboug, France

Poster de conférence hal-04618679v1
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Characterization of silicon vacancies and divacancies in hexagonal silicon carbide formed by nitrogen and aluminum ion implantation

Enora Marion Vuillermet , Nicolas Bercu , Florence Etienne , Mihai Lazar , Louis Giraudet

C'Nano 2023: The Nanoscience meeting, Mar 2023, Poitiers, France.

Poster de conférence hal-04171800v1
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Recrystallisation of thin 4H-SiC films deposed by PVD

Elise Usureau , Enora Marion Vuillermet , Mihai Lazar , Aurore Andrieux , Alexandre Jacquemot

19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland.

Poster de conférence hal-04171214v1
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Nanostructuring of 4H-SiC by high temperature annealing

Enora Marion Vuillermet , Elise Usureau , Mihai Lazar , Regis Deturche

19th International Conference on Silicon Carbide and Related Materials (ICSCRM 2022), Sep 2022, Davos, Switzerland.

Poster de conférence hal-04171193v1

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard et al.

Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009

Chapitre d'ouvrage hal-00661529v1