Mihai Lazar
Présentation
Publications
Publications
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Technologie pour l’intégration de composants semiconducteurs à large bande interditeEnergie électrique. INSA de Lyon; Université Claude Bernard Lyon 1, 2018 |
CREATION D’UNE FENETRE DE SORTIE DE RAYONNEMENT POUR UN COMPOSANT PHOTOEMETTEURFrance, N° de brevet: FR2201067. 2022 |
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FABRICATION D’UN COMPOSANT EMETTEUR DE RAYONNEMENT A PARTIR D’UN SUBSTRAT DE CARBURE DE SILICIUMFrance, N° de brevet: FR2201064. 2022 |
Correlative Near-Field Characterizations with KPFM, sMIM and SCM to Characterize the Geometry of a N-Channel Failed SiC JFETISTFA 2025, Nov 2025, Pasadena, France. pp.404-410, ⟨10.31399/asm.cp.istfa2025p0404⟩ |
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction TransistorInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128 |
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Formation of Highly Doped and Defect-Free P-Type Junctions in SiC by Using High Temperature Implants and UV-Laser AnnealingInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.712-713 |
SiC plasma etching technology processes for power and optoelectronic devicesPESM 2024, IMEC Belgium, Jun 2024, Leuven (BE), Belgium |
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Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centersInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States |
La gravure plasma, une étape critique dans la technologie SiC. Mécanismes physico-chimiques et applicationsJournées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France |
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodesInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592 |
Integration of micro-fabricated thermal flow rate sensors in a 4H-SiC substrate passivated by a MPECVD-grown diamond layerThe 34th International Conference on Diamond and Carbon Materials (ICDCM 2024), Sep 2024, Dresde, Germany |
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Complementary SiC technology for integrated power and optoelectronic devicesIEEE 2023 International semiconductor conference (CAS) - 46th edition, Oct 2023, Sinaia (Romania), Romania |
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Design and Characterization of an Optical 4H-SiC Bipolar Junction TransistorICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
Caractérisation du dopage de dispositifs de puissance en 4H-SiC par KPFM et spectroscopie µ-Raman24ème Forum des microscopies à sonde locale, Apr 2023, Obernai, France |
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Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiCIEEE 2023 International semiconductor conference (CAS) - 46th edition, NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES - IMT Bucharest; IEEE – Electron Devices Society, Oct 2023, Sinaia (Romania), Romania. pp.135-138, ⟨10.1109/CAS59036.2023.10303651⟩ |
Integrated technology developed in SiC and other wide-bandgap semiconductors for harsh environment power electronics, sensors and quantum nanophononics.Technological Horizons in Micro and Nanoelectronics. Contributions of Diaspora to the Integration of Romania in International Projects - IPCEI, PNRR, CHIPS ACT - April 11-13, 2023, Romanian Academy, Apr 2023, Timisoara, Romania |
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩ |
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩ |
Surface nano-structuration of 4H-SiC by controlled high-temperature annealingThe 6th International Workshop on Ultraviolet Materials and Devices (IWUMD 2023), Jun 2023, Metz, France |
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Recrystallization of thin 4H-SiC films deposited by PVD techniques, a way for new emerging fieldsC'Nano 2023: The Nanoscience meeting, Centre national de compétences en Nanosciences, Mar 2023, Poitiers, France |
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power convertersICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
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SiC structural characterization by non destructive near-field microscopy techniques2022 International Semiconductor Conference (CAS), Oct 2022, Poiana Brasov, Romania. pp.73-76, ⟨10.1109/CAS56377.2022.9934358⟩ |
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High quality single crystal recrystallization of thin 4H-SiC films deposed by PVD techniques, a way for new emerging fields19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland |
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Enhancement of light extraction in 4H silicon carbide by nanostructuring the surface with high temperature annealing19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland |
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Surface engineering for SiC etching with Ni electroplating masks2022 International Semiconductor Conference (CAS), Oct 2022, Poiana Brasov, Romania. pp.119-122, ⟨10.1109/CAS56377.2022.9934701⟩ |
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ |
KPFM - Raman spectroscopy coupled technique for the characterization of wide bandgap semiconductor devices13th European Conference on Silicon Carbide and Related Materials( ECSCRM2020-2021 ), Oct 2021, Tours, France |
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Ion Implantation Point Defect Engineering in SiC for Photonic Quantum Technology13th European Conference on Silicon Carbide and Related Materials (ECSCRM2020-2021 ), Oct 2021, Tours, France |
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Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysisECSCRM2020-2021, Oct 2021, Tours, France |
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SiC tools for reliability study42nd edition of International Semiconductor Conference - CAS 2019, Oct 2019, Sinaia, Romania. ⟨10.1109/SMICND.2019.8923664⟩ |
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SiC lateral Schottky diode technology for integrated smart power converter2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩ |
First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environmentsCAS, Oct 2017, Sinaia, Romania. ⟨10.1109/SMICND.2017.8101191⟩ |
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxyECSCRM'16, Sep 2016, Halkidiki, Greece |
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detectionsECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52 |
Vertical termination filled with adequate dielectric for SiC devices in HVDC applicationsInternational Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy |
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Graphene Field Effect Transistors on SiC for High Speed and Bio-sensing ApplicationsJNTE (Journées Nationales des Technologies Emergentes), Nov 2015, Ecully, France |
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phaseICSCRM, Oct 2015, Giardini Naxos, Italy |
Realization of a single layer graphene field effect transistorEMRS Spring Meeting, 2015, Lille, France |
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4H-SiC P-N junctions realized by VLS for JFET lateral structuresECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61 |
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4H-SiC VJFETs with Self-Aligned ContactsECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75 |
Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS TransportHeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩ |
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N JunctionsSemiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States |
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devicesCAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩ |
3C-SiC Seeded Growth on Diamond Substrate by VLS TransportICSCRM 2013, Sep 2013, Miyazaki, Japan. pp.234-237, ⟨10.4028/www.scientific.net/MSF.778-780.234⟩ |
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Graphene on 4H-SiC for terahertz transistors and ferroelectric non-volatile memoriesCSCRM, 2014, Grenoble, France |
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On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealingECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63 |
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBICSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspectsCAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩ |
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Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAXSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p |
p-type SiC growth on diamond substrate by VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p |
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Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transportInternational Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan |
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Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transportProceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p |
Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviourHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩ |
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4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processesCSCRM, Sep 2011, Cleveland, United States |
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Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrateCSCRM, Sep 2011, Cleveland, United States |
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Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiCHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩ |
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SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurementsICSCRM, Sep 2011, Cleveland, United States |
Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrateHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩ |
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600 V PiN diodes fabricated using on-axis 4H silicon carbideInternational Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩ |
Buried selective growth of p-doped SiC by VLS epitaxyCSCRM, Sep 2011, Cleveland, United States |
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Modeling, Fabrication, and Characterization of Planar Inductors on YIG SubstratesCIMA, Mar 2011, Beyrouth, Lebanon. pp.Tu-P9 |
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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature ApplicationsCIMA, Mar 2011, Beyrouth, Lebanon. pp.CD |
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Réalisation de contact ohmique sur SiC-4H type PJNRDM2011, May 2011, Paris, France |
OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficientsCSCRM, Sep 2011, Cleveland, United States |
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Investigation of 3C-SiC lateral growth on 4H-SiC MESAsCSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩ |
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High-temperature behavior of SiC power diodesEPE, Aug 2011, Birmingham, United Kingdom. pp.CD |
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface StateCSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩ |
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and CharacterizationHiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7 |
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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristicsWOCSDICE, May 2011, Catania, Italy. pp.181 |
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State of the art of High Temperature Power ElectronicsMicrotherm, Jun 2009, Lodz, Poland. pp.8-17 |
Process Optimization for High Temperature SiC Lateral DevicesCSCRM, Sep 2008, Barcelone, Spain. pp.585-588, ⟨10.4028/www.scientific.net/MSF.615-617.585⟩ |
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Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown VoltageCSCRM, Sep 2008, Barcelone, Spain. pp.695-698, ⟨10.4028/www.scientific.net/MSF.615-617.695⟩ |
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Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2 |
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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa DiodeCSCRM, Oct 2007, Otsu, Japan. pp.1011-1014, ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩ |
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SiC Power Semiconductor Devices for new Applications in Power Electronics13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩ |
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France |
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiCCSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩ |
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiCICSCRM'2007, Oct 2007, Otsu, Japan |
1.2 kV pin diodes with SiCrystal epiwaferCSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.901-904, ⟨10.4028/www.scientific.net/MSF.556-557.901⟩ |
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High energy N+ ion implantation in 4H–SiC15th International Conference on Ion Beam Modification of Materials, Sep 2006, Taormina, Italy. pp.265-269, ⟨10.1016/j.nimb.2007.01.256⟩ |
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Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France |
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Towards an integrated inverter based on lateral JFET SiC4th CIPS, Jun 2006, Naples, Italy. pp.171-176 |
Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based meltsCSCRM, Sep 2005, Pittsburgh, PA, United States. pp.275-278, ⟨10.4028/www.scientific.net/MSF.527-529.275⟩ |
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Deep SiC etching with RIEE-MRS 2006, May 2006, Nice, France. pp.3886392 |
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Ni-Al Ohmic contact to p-type 4H-SiC2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩ |
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Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France |
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Gravure RIE profonde du SiC pour la réalisation de composants de puissance3eme colloque sur les Matériaux du Génie Electrique, Dec 2005, Lyon, France |
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HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France |
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SiC-based current limiter devicesInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩ |
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P-type SiC layers formed by VLS induced selective epitaxial growthEuropean Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy |
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Conception d'un transistor JFET 5 kV en SiC-4H10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France |
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A 3.5 kV thyristor in 4H-SiC with a JTE peripheryEuropean Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy |
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The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France |
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristorInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France |
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Electrothermal simulations of silicon carbide current limiting devices2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩ |
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extensionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France |
Silicon Carbide specific components for power electronics system protectionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France |
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Design and simulation of a planar anode GTO thyristor on SiCCAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩ |
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩ |
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral ExtensionEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden |
Characterization of a 4H-SiC High Power Density Controlled Current LimiterEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden |
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Study of 6H-SiC high voltage bipolar diodes under reverse biasesEuropean Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France |
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effectsICSCRM, Oct 2001, Tsukuba, Japan |
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4H-SiC bipolar power diodes realized by ion implantationCAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩ |
Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States |
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterizationICSCRM, Oct 2001, Tsukuba, Japan |
Experimental characterization of a 4H-SiC high voltage current limiting deviceEuropean Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France |
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF AnnealingEuropean Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72 |
Optical Beam Induced Current Measurements: principles and applications to SiC device characterisationPeter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009 |
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Integration of bright color centers into arrays of silicon carbide nanopillars2025 |