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Mustafa SHQAIR

Postdoc researcher
50%
Libre accès
8
Documents
Affiliations actuelles
  • 266932
Identifiants chercheurs
  • IdHAL mustafa-shqair
  • ORCID 0000-0002-2122-6039
  • Google Scholar : https://scholar.google.fr/citations?user=twsG8ioAAAAJ
Contact

Présentation

I am currently a postdoctoral researcher at "LAPLACE laboratory" (until July 2024), analyzing the reliability and limits of the use of SiC MOSFET transistors in extreme accidental conditions by applying Multiphysics simulations. I took my Ph.D. degree from "École normale supérieure Paris-Saclay University". My doctoral work, conducted at "Laboratoire SATIE / Université Gustave Eiffel (ex IFSTTAR)", focused on interpreting and modeling the degradations of topside power electronics components from a physiochemical-microstructural view (2022). I studied for my Bachelor's and Master's degrees in Physical & Materials Chemistry at the "Lebanese University" (2014-2019). Through the 1st year of my Master's studies, I followed training at "MCEMA Laboratory / Lebanese University", examining the adsorption of ZSM5 zeolite on toxic materials for artificial kidney applications (2018). Starting from the second semester of my 2nd year of my Master's studies, I launched my journey in France by undergoing an internship at "SATIE laboratory / IFSTTAR" to investigate the role of temperature and temperature cycles on the interface energy between thin aluminum film grains in semiconductors (2019).

Domaines de recherche

Matériaux Physique [physics] Sciences de l'ingénieur [physics]

Publications

Image document

Thermo-Mechanical and Metallurgical Preliminary Analysis of SiC MOSFET Gate-Damage Mode under Short-Circuit based on a Complete Transient Multiphysics 2D FEM [Best Paper Award]

Mustafa Shqair , Emmanuel Sarraute , Thibauld Cazimajou , Frédéric Richardeau
34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF'23, Université Toulouse 3 Paul Sabatier, Université de Bordeaux, IMS, LAAS-CNRS, CNES, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115081⟩
Communication dans un congrès hal-04233908v1

Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics

Mustafa Shqair , Zoubir Khatir , Ali Ibrahim , Mounira Bouarroudj-Berkani , Ayda Halouani
2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Apr 2022, St Julian, Malta. pp.1-6, ⟨10.1109/EuroSimE54907.2022.9758895⟩
Communication dans un congrès hal-03656147v1
Image document

Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM [1st Prize Winner - Best Paper Awards ESREF'23]

M. Shqair , E. Sarraute , T. Cazimajou , Frédéric Richardeau
Microelectronics Reliability, 2023, pp.115081. ⟨10.1016/j.microrel.2023.115081⟩
Article dans une revue hal-04236654v1
Image document

Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cycling

Mustafa Shqair , Zoubir Khatir , Ali Ibrahim , Ayda Halouani , Mounira Bouarroudj-Berkani
Microelectronics Reliability, 2022, ⟨10.1016/j.microrel.2022.114635⟩
Article dans une revue hal-03788643v1

An EBSD Study of Fatigue Crack Propagation in Bonded Aluminum Wires Cycled from 55°C to 85°C

Ayda Halouani , Zoubir Khatir , Mustafa Shqair , Ali Ibrahim , Pierre-Yves Pichon
Journal of Electronic Materials, 2022, 51 (12), pp.7353-7365. ⟨10.1007/s11664-022-09937-5⟩
Article dans une revue hal-04036851v1

A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices

Mustafa Shqair , Zoubir Khatir , Ali Ibrahim , Mounira Bouarroudj-Berkani , Ayda Halouani
Microelectronics Reliability, 2022, 132, pp.114516. ⟨10.1016/j.microrel.2022.114516⟩
Article dans une revue hal-03656143v1

Finite elements analyses of early-stage crack propagation in aluminum wire bonds due to power cycling

A Halouani , Mustafa Shqair , Zoubir Khatir , A Ibrahim , M Ouhab
Microelectronics Reliability, 2022, 138, pp.114610. ⟨10.1016/j.microrel.2022.114610⟩
Article dans une revue hal-04102314v1