Mustafa SHQAIR
Postdoc researcher
50%
Libre accès
8
Documents
Affiliations actuelles
- 266932
Identifiants chercheurs
- mustafa-shqair
- 0000-0002-2122-6039
- Google Scholar : https://scholar.google.fr/citations?user=twsG8ioAAAAJ
Présentation
I am currently a postdoctoral researcher at "LAPLACE laboratory" (until July 2024), analyzing the reliability and limits of the use of SiC MOSFET transistors in extreme accidental conditions by applying Multiphysics simulations.
I took my Ph.D. degree from "École normale supérieure Paris-Saclay University". My doctoral work, conducted at "Laboratoire SATIE / Université Gustave Eiffel (ex IFSTTAR)", focused on interpreting and modeling the degradations of topside power electronics components from a physiochemical-microstructural view (2022).
I studied for my Bachelor's and Master's degrees in Physical & Materials Chemistry at the "Lebanese University" (2014-2019). Through the 1st year of my Master's studies, I followed training at "MCEMA Laboratory / Lebanese University", examining the adsorption of ZSM5 zeolite on toxic materials for artificial kidney applications (2018). Starting from the second semester of my 2nd year of my Master's studies, I launched my journey in France by undergoing an internship at "SATIE laboratory / IFSTTAR" to investigate the role of temperature and temperature cycles on the interface energy between thin aluminum film grains in semiconductors (2019).
Domaines de recherche
Matériaux
Physique [physics]
Sciences de l'ingénieur [physics]
Publications
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Thermo-Mechanical and Metallurgical Preliminary Analysis of SiC MOSFET Gate-Damage Mode under Short-Circuit based on a Complete Transient Multiphysics 2D FEM [Best Paper Award]34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF'23, Université Toulouse 3 Paul Sabatier, Université de Bordeaux, IMS, LAAS-CNRS, CNES, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115081⟩
Communication dans un congrès
hal-04233908v1
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Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Apr 2022, St Julian, Malta. pp.1-6, ⟨10.1109/EuroSimE54907.2022.9758895⟩
Communication dans un congrès
hal-03656147v1
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Physicochemical and microstructural approaches for modeling the degradations of power electronic component interconnectionMaterial chemistry. Université Paris-Saclay, 2022. English. ⟨NNT : 2022UPAST132⟩
Thèse
tel-03871629v1
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