Olivier BRIOT

206
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Publications

Structural and Optical Analysis of Chemically Deposited ZnS Thin Films for Optoelectronic Devices Applications

A. Arifa Hassan , Aboubacar Almoustapha , Halidou Ibrahim , Olivier Briot , Sandrine Juillaguet et al.

Asian Journal of Physical and Chemical Sciences, 2025, 13 (2), pp.56-64. ⟨10.9734/ajopacs/2025/v13i2247⟩

Article dans une revue hal-05055579v1

Effect of the growth temperature on the crystal quality and optical properties in ZnS

Hassan Amadou Arifa , Olivier Briot , Sandrine Juillaguet , Herve Peyre , Bernard Fraisse et al.

Journal of Applied Physics, 2025, 138 (11), ⟨10.1063/5.0271678⟩

Article dans une revue hal-05295706v1
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Synthesis and characterization of aluminum doped zinc oxide nanoparticles via a novel and low cost aqueous chemical process

Abdoul-Razak Moussa Tankari , K. Medjnoun , M. Nouiri , Olivier Briot , S. Juillaguet et al.

Materials Letters, 2023, 353, pp.135230. ⟨10.1016/j.matlet.2023.135230⟩

Article dans une revue hal-04313143v1
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Association of Early Norepinephrine Administration With 24-Hour Mortality Among Patients With Blunt Trauma and Hemorrhagic Shock

Tobias Gauss , Justin Richards , Costanza Tortù , François-Xavier Ageron , Sophie Hamada et al.

JAMA Network Open, 2022, 5 (10), pp.e2234258. ⟨10.1001/jamanetworkopen.2022.34258⟩

Article dans une revue hal-03807657v1
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Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction

C. Iatosti , Matthieu Moret , Antoine Tiberj , Olivier Briot

Solar Energy Materials and Solar Cells, 2021, 220, pp.110847. ⟨10.1016/j.solmat.2020.110847⟩

Article dans une revue hal-03175976v1
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InSe as a case between 3D and 2D layered crystals for excitons

T. Shubina , Wilfried Desrat , Matthieu Moret , Antoine Tiberj , Olivier Briot et al.

Nature Communications, 2019, 10, pp.3479. ⟨10.1038/s41467-019-11487-0⟩

Article dans une revue hal-02275857v1
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Superconducting Ga/GaSe layers grown by van der Waals epitaxy

Wilfried Desrat , Matthieu Moret , Olivier Briot , Thi Huong Ngo , Benjamin Piot et al.

Materials Research Express, 2018, 5 (4), pp.045901. ⟨10.1088/2053-1591/aab8c5⟩

Article dans une revue hal-01784269v1

Properties of MAPbI3 perovskite layers grown with HCl additions

Matthieu Moret , Antoine Tiberj , Wilfried Desrat , Olivier Briot

Superlattices and Microstructures, 2018, 120, pp.136. ⟨10.1016/j.spmi.2018.05.033⟩

Article dans une revue hal-01802768v1

Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells

Olivier Briot , Matthieu Moret , Camille Barbier , A. Tiberj , H. Peyre et al.

Solar Energy Materials and Solar Cells, 2018, 174, pp.418 - 422. ⟨10.1016/j.solmat.2017.09.019⟩

Article dans une revue hal-01596720v1
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Study of $Cu_{2}O{\backslash}ZnO$ nanowires heterojunction designed by combining electrodeposition and atomic layer deposition

Houssin Makhlouf , Matthieu Weber , Olfa Messaoudi , Sophie Tingry , Matthieu Moret et al.

Applied Surface Science, 2017, 426, pp.301 - 306. ⟨10.1016/j.apsusc.2017.07.130⟩

Article dans une revue hal-01596715v1

High Efficiency Solar Cell Based on Full PVD Processed Cu(In,Ga)Se2/CdIn2S4 Heterojunction

Nicolas Barreau , Agathe Frelon , Thomas Lepetit , Eric Gautron , Nicolas Gautier et al.

Solar RRL, 2017, ⟨10.1002/solr.201700140⟩

Article dans une revue hal-01616034v1

Study and optimization of Al-doped ZnO thin films deposited on PEN substrates by RF-magnetron sputtering from nanopowders targets

Semmari Hamza , Kamal Djessas , N. Brihi , Olivier Briot , Matthieu Moret et al.

Journal of Materials Science: Materials in Electronics, 2016, 27 (2), pp.1730-1737. ⟨10.1007/s10854-015-3947-6⟩

Article dans une revue hal-01280701v1

Effect of Sprayed Solution Volume on Physical Properties of Titanium Dioxide Thin Films

W. Naffouti , T. Ben Nasr , Olivier Briot , N. Kamoun-Turki

Journal of Electronic Materials, 2015, 44 (10), pp.3661-3669. ⟨10.1007/s11664-015-3878-2⟩

Article dans une revue hal-01201707v1

Characteristics of nanostructured Zn1-xVxO thin films with high vanadium content elaborated by rf-magnetron sputtering

K. Medjnoun , Kamal Djessas , M. S. Belkaid , S. E. Grillo , A. Solhy et al.

Superlattices and Microstructures, 2015, 82, pp.384-398. ⟨10.1016/j.spmi.2015.02.019⟩

Article dans une revue istex hal-01134622v1

Growth, structure and optoelectronic characterizations of high quality Cu2ZnSnS4 thin films obtained by close spaced vapor transport

Alphousseyni Sagna , Kamal Djessas , C. Sene , Mohamed Belaqziz , H. Chehouani et al.

Superlattices and Microstructures, 2015, 85, pp.918-924. ⟨10.1016/j.spmi.2015.06.019⟩

Article dans une revue istex hal-01169695v1

Phonon signature of the high-pressure rocksalt phase of InN

Karel Kunc , Alain Polian , François Demangeot , Olivier Briot

physica status solidi (b), 2015, 252 (9), pp.2104-2110. ⟨10.1002/pssb.201552126⟩

Article dans une revue istex hal-01158625v1

Influence of the growth rate on the morphology of electrodeposited zinc oxide

Yoann Robin , Matthieu Moret , Sandra Ruffenach , Roger Aulombard , Olivier Briot

Superlattices and Microstructures, 2014, 73, pp.281. ⟨10.1016/j.spmi.2014.05.032⟩

Article dans une revue istex hal-01009319v1

Atomic Layer Deposition of zinc oxide for solar cell applications

Matthieu Moret , A. Abou Chaaya , Mikhael Bechelany , Philippe Miele , Yoann Robin et al.

Superlattices and Microstructures, 2014, 75, pp.477-484. ⟨10.1016/j.spmi.2014.07.050⟩

Article dans une revue istex hal-01064707v1
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Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities

B. de Vries , U. Wahl , Sandra Ruffenach , Olivier Briot , A. Vantomme

Applied Physics Letters, 2013, 103 (17), pp.172108. ⟨10.1063/1.4826705⟩

Article dans une revue hal-00914581v1

Investigation of indium nitride for micro-nanotechnology

Anisha Gokarna , Jean-Francois Lampin , Dominique Vignaud , El Hadj Dogheche , Didier Decoster et al.

International Journal of Nanotechnology, 2012, 9 (10-12), pp.900-906. ⟨10.1504/IJNT.2012.049454⟩

Article dans une revue hal-00787438v1

Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization

Sergey V. Ovsyannikov , Vladimir V. Shchennikov , Alexander E. Karkin , Alain Polian , Olivier Briot et al.

Applied Physics Letters, 2010, 97, pp.032105. ⟨10.1063/1.3466913⟩

Article dans une revue hal-00516955v1

Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zinc blende phase

D. Gonzalez , J. G. Lozano , M. Herrera , F. M. Morales , Sandra Ruffenach et al.

Nanotechnology, 2010, 21, pp.185706. ⟨10.1088/0957-4484/21/18/185706⟩

Article dans une revue hal-00539809v1

Phages recognizing the Indium Nitride semiconductor surface via their peptides.

Elias Estephan , Marie-Belle Saab , Marta Martin , Christian Larroque , Frédéric Cuisinier et al.

Journal of Peptide Science, 2010, DOI 10.1002/psc.1315. ⟨10.1002/psc.1315⟩

Article dans une revue istex hal-00526584v1

Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties

Matthieu Moret , Sandra Ruffenach , Olivier Briot , B. Gil

European Physical Journal: Applied Physics, 2009, 45 (2), pp.20305

Article dans une revue hal-00390126v1

Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy

Sandra Ruffenach , Matthieu Moret , Olivier Briot , Bernard Gil

Applied Physics Letters, 2009, 95, pp.042102. ⟨10.1063/1.3189212⟩

Article dans une revue hal-00539828v1

Structural changes during the natural aging process of InN quantum dots

David Gonzalez , J.G. Lozano , M. Herrera , N.D. Browning , Sandra Ruffenach et al.

Journal of Applied Physics, 2009, 105, pp.013527. ⟨10.1063/1.3010309⟩

Article dans une revue hal-00390304v1
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Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties

M. Moret , S. Ruffenach , O. Briot , B. Gil

European Physical Journal: Applied Physics, 2009, 45 (2), pp.1. ⟨10.1051/epjap/2009007⟩

Article dans une revue hal-00480143v1

The epitaxial growth of indium nitride using berlinite (AlPO4) and other piezoelectric crystals of the quartz family as substrates

Matthieu Moret , Sandra Ruffenach , Olivier Briot , Bernard Gil , M. Pauthe

Applied Physics Letters, 2009, 95, pp.041910. ⟨10.1063/1.3193655⟩

Article dans une revue hal-00540227v1

The Reduction of Elastic Energy Density in InN Growth on (hkl)-Oriented Planes

Olivier Briot , Bernard Gil , Pierre Bigenwald

Japanese Journal of Applied Physics, 2009, 48, pp.051002. ⟨10.1143/JJAP.48.051002⟩

Article dans une revue hal-00390298v1

The determination of the bulk residual doping in indium nitride films using photoluminescence

Olivier Briot , Matthieu Moret , Sandra Ruffenach , Bernard Gil

Applied Physics Letters, 2009, 95, pp.031910. ⟨10.1063/1.3187914⟩

Article dans une revue hal-00540269v1

Polarization fields in wurtzite strained layers grown on (hkl) planes

Bernard Gil , Pierre Bigenwald , Olivier Briot

Superlattices and Microstructures, 2008, 44 (3), pp.291-301. ⟨10.1016/j.spmi.2008.06.003⟩

Article dans une revue hal-00807034v1

The effect of growth temperature on the luminescence and structural properties of GaN : Tm films grown by gas-source MBE

I. S. Roqan , E. Nogales , K. P. O'Donnell , C. Trager-Cowan , R. W. Martin et al.

Journal of Crystal Growth, 2008, 310, pp.4069-4072. ⟨10.1016/j.jcrysgro.2008.05.037⟩

Article dans une revue istex hal-00540241v1

Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots

J. G. Lozano , A. M. Sanchez , R. Garcia , D. Gonzalez , M. Herrera et al.

Applied Physics Letters, 2007, 91, pp.071915. ⟨10.1063/1.2770776⟩

Article dans une revue hal-00542123v1

Control of InN quantum dot density using rare gases in metal organic vapor phase epitaxy

Sandra Ruffenach , Olivier Briot , Matthieu Moret , Bernard Gil

Applied Physics Letters, 2007, 90, pp.153102. ⟨10.1063/1.2721124⟩

Article dans une revue hal-00542122v1

An evaluation of the growth of nitrides on semipolar substrates using two indicators

Bernard Gil , Pierre Bigenwald , Olivier Briot

physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2007, 1 (6), pp.268-270. ⟨10.1002/pssr.200701208⟩

Article dans une revue istex hal-00390129v1

Initial growth stages of MOVPE InN studied by AFM and specular reflectivity

A. van Der Lee , F. Salah , B. Harzallah , S. Ruffenach , O. Briot

Physica Status Solidi C: Current Topics in Solid State Physics, 2007, 4, pp.150-153. ⟨10.1002/pssc.200673536⟩

Article dans une revue istex hal-00128282v1

Strain relief analysis of InN quantum dots grown on GaN

Juan G. Lozano , Ana M. Sanchez , Rafael Garcia , Sandra Ruffenach , Olivier Briot et al.

Nanoscale Research Letters, 2007, 2 (9), pp.442-446. ⟨10.1007/s11671-007-9080-6⟩

Article dans une revue hal-00390128v1

Strain mapping at the atomic scale in highly mismatched heterointerfaces

Ana Maria Sanchez , Juan Gabriel Lozano , Rafael Garcia , Miriam Herrera , Sandra Ruffenach et al.

Advanced Functional Materials, 2007, 17, pp.2588-2593. ⟨10.1002/adfm.200600813⟩

Article dans une revue istex hal-00540273v1

Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

E. Nogales , Rw Martin , Kp O'Donnell , K. Lorenz , E. Alves et al.

Applied Physics Letters, 2006, 88, pp.031902. ⟨10.1063/1.2162797⟩

Article dans une revue hal-00540370v1

Misfit relaxation of InN quantum dots: Effect of the GaN capping layer

Jg Lozano , Am Sanchez , R. Garcia , D. Gonzalez , Olivier Briot et al.

Applied Physics Letters, 2006, 88, pp.151913. ⟨10.1063/1.2195642⟩

Article dans une revue hal-00540396v1

Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy

A. Pelli , K. Saarinen , F. Tuomisto , Sandra Ruffenach , Olivier Briot

Applied Physics Letters, 2006, 89, pp.011911. ⟨10.1063/1.2219335⟩

Article dans une revue hal-00540405v1

Raman scattering study of wurtzite and rocksalt InN under high pressure.

C. Pinquier , François Demangeot , J. Frandon , J.C. Chervin , A. Polian et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.115211. ⟨10.1103/PhysRevB.73.115211⟩

Article dans une revue hal-00022132v1

Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

Jg Lozano , Am Sanchez , R. Garcia , D. Gonzalez , D. Araujo et al.

Applied Physics Letters, 2005, 87 (26), pp.263104. ⟨10.1063/1.2152110⟩

Article dans une revue hal-00390132v1

Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms

François Demangeot , C. Pinquier , J. Frandon , M. Gaio , Olivier Briot et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.104305. ⟨10.1103/PhysRevB.71.104305⟩

Article dans une revue hal-00540408v1

Selectively excited photoluminescence from Eu-implanted GaN

K. Wang , Rw Martin , Kp O'Donnell , V. Katchkanov , E. Nogales et al.

Applied Physics Letters, 2005, 87 (11), pp.112107. ⟨10.1063/1.2045551⟩

Article dans une revue hal-00390133v1

Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition

R. Intartaglia , B. Maleyre , Sandra Ruffenach , Olivier Briot , T. Taliercio et al.

Applied Physics Letters, 2005, 86, pp.142104. ⟨10.1063/1.1897428⟩

Article dans une revue hal-00540409v1

Terahertz investigation of high quality indium nitride epitaxial layers

Ym Meziani , Benedicte Maleyre , Ml Sadowski , Sandra Ruffenach , Olivier Briot et al.

Physica Status Solidi A (applications and materials science), 2005, 202, pp.590-592. ⟨10.1002/pssa.200460434⟩

Article dans une revue istex hal-00540412v1

Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOVPE

B. Maleyre , S. Ruffenach , O. Briot , A. van Der Lee

Superlattices and Microstructures, 2004, 36, pp.527-535. ⟨10.1016/j.spmi.2004.09.052⟩

Article dans une revue istex hal-00164212v1

High-temperature annealing and optical activation of Eu-implanted GaN

K. Lorenz , U. Wahl , E. Alves , S. Dalmasso , Rw Martin et al.

Applied Physics Letters, 2004, 85, pp.2712-2714. ⟨10.1063/1.1801686⟩

Article dans une revue hal-00539948v1

Raman scattering in hexagonal InN under high pressure

C. Pinquier , François Demangeot , J. Frandon , Jw Pomeroy , M. Kuball et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.113202. ⟨10.1103/PhysRevB.70.113202⟩

Article dans une revue hal-00539950v1

Giant second-harmonic generation in a one-dimensional GaN photonic crystal

Jeremi Torres , Dominique Coquillat , Rene Legros , Jean-Paul Lascaray , Frederic Teppe et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69, pp.085105. ⟨10.1103/PhysRevB.69.085105⟩

Article dans une revue hal-00540436v1

Giant second-harmonic generation in a one-dimensional GaN photonic crystal

J. Torres , D. Coquillat , R. Legros , J.P Lascaray , F. Teppe et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, pp.69 085105 1-8 (2004)

Article dans une revue hal-00385108v1

Indium nitride quantum dots grown by metalorganic vapor phase epitaxy

Olivier Briot , B. Maleyre , Sandra Ruffenach

Applied Physics Letters, 2003, 83, pp.2919-2921. ⟨10.1063/1.1613044⟩

Article dans une revue hal-00540467v1

Raman scattering in large single indium nitride dots: Correlation between morphology and strain

François Demangeot , J. Frandon , C. Pinquier , M. Caumont , Olivier Briot et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.245308. ⟨10.1103/PhysRevB.68.245308⟩

Article dans une revue hal-00540458v1

Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal

Jeremi Torres , Dominique Coquillat , Rene Legros , Jean-Paul Lascaray , Sandra Ruffenach et al.

physica status solidi (b), 2003, 240, pp.455-458. ⟨10.1002/pssb.200303309⟩

Article dans une revue istex hal-00540469v1

Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering

M. Kuball , François Demangeot , J. Frandon , Ma Renucci , H. Sands et al.

Applied Physics Letters, 1999, 74, pp.549-551

Article dans une revue hal-00545869v1

Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution

A. Ribayrol , Dominique Coquillat , Rm de La Rue , Sk Murad , Cdw Wilkinson et al.

Materials Science and Engineering: B, 1999, 59, pp.335-339

Article dans une revue hal-00546198v1

Inhomogeneous electric field-induced Raman scattering at ZnSe/GaAs interfaces

O. Pages , H. Erguig , Jp Laurenti , M. Certier , D. Bormann et al.

Journal of Applied Physics, 1999, 85, pp.2371-2376

Article dans une revue hal-00546199v1

Influence of defect states on the nonlinear optical properties of GaN

H. Haag , B. Honerlage , Olivier Briot , Roger Aulombard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1999, 60, pp.11624-11630

Article dans une revue hal-00546196v1

Thermal stability of GaN investigated by Raman scattering

M. Kuball , François Demangeot , J. Frandon , Ma Renucci , J. Massies et al.

Applied Physics Letters, 1998, 73, pp.960-962

Article dans une revue hal-00546184v1

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

K. Saarinen , P. Seppala , J. Oila , P. Hautojarvi , C. Corbel et al.

Applied Physics Letters, 1998, 73, pp.3253-3255

Article dans une revue hal-00546183v1

Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1-xAlxN solid solutions

François Demangeot , Jesse Groenen , J. Frandon , Ma Renucci , Olivier Briot et al.

Applied Physics Letters, 1998, 72, pp.2674-2676

Article dans une revue hal-00545870v1

Realization and optical characterization of etched mirror facets in GaN cavities

F. Binet , Jy Duboz , N. Laurent , C. Bonnat , P. Collot et al.

Applied Physics Letters, 1998, 72, pp.960-962

Article dans une revue hal-00546185v1

Optical nonlinearities of gallium nitride

H. Haag , P. Gilliot , B. Honerlage , Olivier Briot , Roger Aulombard

Annales de Physique, 1998, 23, pp.161-162

Article dans une revue hal-00546182v1

Photostimulated emission of GaN layers and devices

Kp O'Donnell , M. Umlauff , M. Kraushaar , H. Kalt , Olivier Briot

Materials Science and Engineering: B, 1997, 50, pp.264-267

Article dans une revue hal-00546193v1

Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

Jl Rouviere , M. Arlery , B. Daudin , G. Feuillet , Olivier Briot

Materials Science and Engineering: B, 1997, 50, pp.61-71

Article dans une revue hal-00546189v1

Optical pumping in nitride cavities with etched mirror facets

F. Binet , Jy Duboz , N. Laurent , C. Bonnat , P. Collot et al.

Materials Science and Engineering: B, 1997, 50, pp.183-187

Article dans une revue hal-00546191v1

Diffusion length of photoexcited carriers in GaN

Jy Duboz , F. Binet , D. Dolfi , N. Laurent , F. Scholz et al.

Materials Science and Engineering: B, 1997, 50, pp.289-295

Article dans une revue hal-00546194v1

Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism technique

M. Julier , J. Campo , Dominique Coquillat , Jean-Paul Lascaray , Denis Scalbert et al.

Materials Science and Engineering: B, 1997, 50, pp.126-129

Article dans une revue hal-00546190v1

Comparative study of hexagonal and cubic GaN growth by RF-MBE

G. Feuillet , F. Widmann , B. Daudin , J. Schuler , M. Arlery et al.

Materials Science and Engineering: B, 1997, 50, pp.233-237

Article dans une revue hal-00546192v1

Anomalous behaviour of optical phonon modes in ZnSe epitaxial layers

O. Pages , Ma Renucci , Olivier Briot , Roger Aulombard

Journal of Raman Spectroscopy, 1997, 28, pp.551-554

Article dans une revue hal-00546201v1

Interplay of electrons and phonons in heavily doped GaN epilayers

François Demangeot , J. Frandon , Ma Renucci , C. Meny , Olivier Briot et al.

Journal of Applied Physics, 1997, 82, pp.1305-1309

Article dans une revue hal-00546203v1

Properties of a photovoltaic detector based on an n-type GaN Schottky barrier

F. Binet , Jy Duboz , N. Laurent , E. Rosencher , Olivier Briot et al.

Journal of Applied Physics, 1997, 81, pp.6449-6454

Article dans une revue hal-00546208v1

Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaN

Olivier Briot , Sandra Ruffenach , Roger Aulombard

Applied Physics Letters, 1997, 71, pp.1990-1992

Article dans une revue hal-00545876v1

The exciton-polariton effect on the photoluminescence of GaN on sapphire

Bernard Gil , Sandra Ruffenach , Olivier Briot

Solid State Communications, 1997, 104, pp.267-270

Article dans une revue hal-00545875v1

Comparison of luminescence and physical morphologies of GaN epilayers

C. Trager-Cowan , Pg Middleton , Kp O'Donnell , Sandra Ruffenach , Olivier Briot

Materials Science and Engineering: B, 1997, 50, pp.161-164

Article dans une revue hal-00545874v1

Zeeman splittings of excitonic transitions at the Gamma point in wurtzite GaN: A magnetoreflectance investigation

J. Campo , M. Julier , Dominique Coquillat , Jean-Paul Lascaray , Denis Scalbert et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 56, pp.R7108-R7111

Article dans une revue hal-00546200v1

Internal structure and oscillator strengths of excitons in strained alpha-GaN

Bernard Gil , Olivier Briot

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1997, 55, pp.2530-2534

Article dans une revue hal-00546211v1

MOVPE growth and characterization of AlxGa1-xN

Sandra Ruffenach , Olivier Briot , Jl Rouviere , Bernard Gil , Roger Aulombard

Materials Science and Engineering: B, 1997, 50, pp.219-222

Article dans une revue hal-00546775v1

Raman determination of phonon deformation potentials in alpha-GaN

François Demangeot , J. Frandon , Ma Renucci , Olivier Briot , Bernard Gil et al.

Solid State Communications, 1996, 100 (4), pp.207

Article dans une revue hal-00547049v1

Coupled LO-plasmon modes in semi-insulating GaAs of ZnSe/GaAs heterojunctions

O. Pagès , Ma Renucci , Olivier Briot , Roger Aulombard

Journal of Applied Physics, 1996, 80 (2), pp.1128

Article dans une revue hal-00547055v1

Optical spectroscopy in (Zn,Cd)Se-ZnSe graded-index separate-confinement heterostructures

L. Aigouy , V. Mathet , F. Liaci , Bernard Gil , Olivier Briot et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1996, 53 (8), pp.4708

Article dans une revue hal-00547079v1

Optical properties of GaN epilayers on sapphire

M. Tchounkeu , Olivier Briot , Bernard Gil , J.P. Alexis , Roger Aulombard

Journal of Applied Physics, 1996, 80 (9), pp.5352

Article dans une revue hal-00547002v1

Gain of optically excited ZnCdSe-ZnSe quantum wells

R. Tomasiunas , Y. Pelant , D. Guennani , J.B. Grun , R. Levy et al.

Solid State Communications, 1996, 97, pp.187

Article dans une revue hal-00547107v1

CRITICAL LAYER THICKNESS IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN INGAAS/GAAS STRAINED QUANTUM-WELLS

Xb Zhang , Olivier Briot , Bernard Gil , Roger Aulombard

Journal of Applied Physics, 1995, 78 (9), pp.5490

Article dans une revue hal-00547266v1

OPTICAL-PROPERTIES AND RECOMBINATION PROCESSES IN (ZN,CD)SE GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURES

L. Aigouy , J.P. Alexis , Olivier Briot , Thierry Cloitre , Bernard Gil et al.

Superlattices and Microstructures, 1995, 17 (4), pp.381

Article dans une revue hal-00547265v1

HIGH-FIELD DIRECT-CURRENT CONDUCTION IN EPITAXIAL ZNS FILMS

E. Bringuier , Olivier Briot

Applied Physics Letters, 1995, 67 (23), pp.3486

Article dans une revue hal-00547264v1

Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry

Bernard Gil , Olivier Briot , Roger Aulombard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 52 (24), pp.17028

Article dans une revue hal-00547098v1

RAMAN-STUDY OF BAND BENDING AT ZNSE/GAAS INTERFACES

O. Pagès , Ma Renucci , Olivier Briot , Roger Aulombard

Journal of Applied Physics, 1995, 77 (3), pp.1241

Article dans une revue hal-00547270v1

Excitons and biexcitons in MOVPE-grown ZnS epitaxial layers

D. Guennani , J. Valenta , A. Manar , J.B Grun , Thierry Cloitre et al.

Solid State Communications, 1995, 96 (9), pp.637. ⟨10.1016/0038-1098(95)00539-0⟩

Article dans une revue istex hal-00547267v1

BAND OFFSETS AND EXCITON BINDING-ENERGIES IN ZN1-XCDXSE-ZNSE QUANTUM-WELLS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

F. Liaci , Pierre Bigenwald , Olivier Briot , Bernard Gil , N. Briot et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 51 (7), pp.4699

Article dans une revue hal-00547269v1

OPTICAL-PROPERTIES OF WIDE-GAP II-VI ZNTE EPILAYERS

M. Averous , A. Abounadi , Roger Aulombard , D. Bouchara , N. Briot et al.

physica status solidi (b), 1994, 181, pp.427

Article dans une revue hal-00547284v1

Optical characterization of pure ZnSe epilayers grown by metal organic vapour-phase epitaxy

A. Chergui , J. Valenta , J.L. Loison , M. Robino , I. Pelant et al.

Semiconductor Science and Technology, 1994, 9 (11), pp.2073. ⟨10.1088/0268-1242/9/11/007⟩

Article dans une revue istex hal-00547275v1

MOVPE GROWTH AND OPTICAL CHARACTERIZATION OF ZNSE/ZNS STRAINED-LAYER SUPERLATTICES

L. Aigouy , N. Briot , D. Bouchara , Thierry Cloitre , M. Diblasio et al.

Superlattices and Microstructures, 1994, 16 (1), pp.71

Article dans une revue hal-00547271v1

REFLECTIVITY AND PHOTOLUMINESCENCE MEASUREMENTS IN ZNS EPILAYERS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

A. Abounadi , M. Diblasio , D. Bouchara , J. Calas , M. Averous et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1994, 50 (16), pp.11677

Article dans une revue hal-00547273v1

REFLECTIVITY ANALYSIS OF ZNS LAYERS GROWN ON GAAS AND SI SUBSTRATES BY METAL-ORGANIC VAPOR-PHASE EPITAXY

Olivier Briot , N. Briot , A. Abounadi , Bernard Gil , Thierry Cloitre et al.

Semiconductor Science & Technology, 1994, 9 (2), pp.207

Article dans une revue hal-00547286v1

ELECTRONIC STATES AND BINDING-ENERGIES IN ZNS-ZNSE SUPERLATTICES

Bernard Gil , Thierry Cloitre , M. Diblasio , Pierre Bigenwald , L. Aigouy et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1994, 50 (24), pp.18231

Article dans une revue hal-00547272v1
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Optical properties of ZnSe-ZnTe type II superlattices

T. Cloitre , N. Briot , O. Briot , P. Boring , B. Gil et al.

Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-421-C5-424. ⟨10.1051/jp4:1993590⟩

Article dans une revue istex jpa-00251677v1

BIAXIAL-STRAIN EFFECT ON EXCITONIC TRANSITIONS E(0) AND E(0)+DELTA(0) IN THE TEMPERATURE-RANGE 4.5-200 K AND ZEEMAN SPLITTING IN ZNSE/GAAS EPILAYERS

D. Coquillat , F. Hamdani , J.P Lascaray , Olivier Briot , N. Briot et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1993, 46 (16), pp.10489

Article dans une revue hal-00547294v1

LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF ZNTE USING TRIETHYLAMINE DIMETHYL ZINC ADDUCT

Thierry Cloitre , N. Briot , Olivier Briot , Bernard Gil , Roger Aulombard

Journal of Crystal Growth, 1993, 133 (2), pp.101

Article dans une revue hal-00547288v1

CONFINEMENT AND STRAIN EFFECTS ON PHONONS IN A ZNSE-ZNTE SUPERLATTICE

J. Frandon , Ma Renucci , N. Briot , Olivier Briot , Roger Aulombard

Superlattices and Microstructures, 1993, 14 (1), pp.71

Article dans une revue hal-00547276v1

METAL ORGANIC VAPOR-PHASE EPITAXY AND LUMINESCENCE STUDIES OF GAAS ZNSE DOUBLE HETEROSTRUCTURES

Olivier Briot , N. Briot , Thierry Cloitre , Roger Aulombard , Bernard Gil et al.

Semiconductor Science & Technology, 1991, 6 (7), pp.695

Article dans une revue hal-00547297v1

LOW-TEMPERATURE MOVPE GROWTH OF ZNSE LAYERS USING ALKYLS IN A DOUBLE ZONE REACTOR

Olivier Briot , Robert Delmas , N. Tempier , R. Sauvezon , Roger Aulombard

Journal of Crystal Growth, 1989, 98 (4), pp.857

Article dans une revue hal-00547301v1
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Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates

Haitham Hrich , Matthieu Moret , Olivier Briot , Matthieu Paillet , Jean Manuel Decams et al.

ECSCRM 2021, Oct 2021, Tours (FR), France. pp.59-63, ⟨10.4028/p-1ak21z⟩

Communication dans un congrès hal-03845325v1

Optical investigations and strain effect in AlGaN/GaN epitaxial layers

M. Jayasakthi , Sandrine Juillaguet , Herve Peyre , Leszek Konczewicz , Matthieu Moret et al.

33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩

Communication dans un congrès hal-01935164v1

X-ray diffraction study of A- plane non polar InN epilayer grown by MOCVD

Matthieu Moret , Olivier Briot , Bernard Gil

GALLIUM NITRIDE MATERIALS AND DEVICES X, conferenceOrganizer, 2015, San Francisco, United States. pp.936328, ⟨10.1117/12.2077513⟩

Communication dans un congrès hal-01134316v1

High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se-2

Matthieu Moret , Olivier Briot , Bernard Gil , Thomas Lepetit , Ludovic Arzel et al.

PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV, 2015, San Francisco, California, United States. pp.93581A, ⟨10.1117/12.2076938⟩

Communication dans un congrès hal-01134308v1

In-situ monitoring of CuInSe2 thin films growth by light scattering

Yoann Robin , Matthieu Moret , Sandra Ruffenach , Roger Aulombard , Olivier Briot

E-MRS 2014 Spring Meeting, Symposium A, Thin-Film Chalcogenide Photovoltaic Materials, Daniel Abou-Ras; Marika Edoff; Takashi Minemoto; David Mitzi; Alessandro Romeo, May 2014, Lille, France. pp.276, ⟨10.1016/j.tsf.2014.10.083⟩

Communication dans un congrès istex hal-01101052v1

Annealing effect of CdS thin films deposited by chemical bath deposition on different substrates

Yoann Robin , Matthieu Moret , Sandra Ruffenach , Roger Aulombard , Olivier Briot

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, Jun 2013, Tampa, United States. pp.1173, ⟨10.1109/PVSC.2013.6744349⟩

Communication dans un congrès hal-01009387v1

(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum

Sandra Ruffenach , Yoann Robin , Matthieu Moret , Roger Aulombard , Olivier Briot

E-MRS Spring Meeting, May 2012, Strasbourg, France. pp.143-147, ⟨10.1016/j.tsf.2013.01.053⟩

Communication dans un congrès istex hal-00820323v1

Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

V. Darakchieva , K. Lorenz , M. -Y. Xie , E. Alves , W. J. Schaff et al.

E-MRS ICAM IUMRS 2011 Spring Meeting – Symposium H, May 2011, Nice, France. pp.91-94, ⟨10.1002/pssa.201100175⟩

Communication dans un congrès istex hal-00698910v1

Phages recognizing the Indium Nitride semiconductor surface via their peptides

Elias Estephan , Marie-Belle Saab , Marta Martin-Fernandez , Christian Larroque , Frederic J. G. Cuisinier et al.

E-MRS Symposium on Peptide-based Materials - from Nanostructures to Applications, Jun 2010, Strasbourg (FRANCE), France. pp.143-147

Communication dans un congrès hal-00633883v1

Managing gas purity in epitaxial growth

M. Succi , S. Pirola , Sandra Ruffenach , Olivier Briot

Italian Crystal Growth Conference (ICGC 2010), Nov 2010, Parme, Italy. pp.809-812, ⟨10.1002/crat.201000610⟩

Communication dans un congrès istex hal-00633875v1

MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate

Matthieu Moret , Sandra Ruffenach , Olivier Briot , Bernard Gil

ISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩

Communication dans un congrès istex hal-00633882v1

Free electron properties and hydrogen in InN grown by MOVPE

V. Darakchieva , M. -Y. Xie , D. Rogalla , H. -W. Becker , K. Lorenz et al.

ISGN3, Jul 2010, France. pp.1179-1182, ⟨10.1002/pssa.201001151⟩

Communication dans un congrès istex hal-00633877v1

MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire

Matthieu Moret , Sandra Ruffenach , Olivier Briot , Bernard Gil

Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.24-28

Communication dans un congrès hal-00540220v1

Recent advances in the MOVPE growth of indium nitride

Sandra Ruffenach , Matthieu Moret , Olivier Briot , Bernard Gil

Symposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.9-18

Communication dans un congrès hal-00540219v1

Peptides recognizing the InN semiconductor surface

Elias Estephan , Marie-Belle Saab , Christian Larroque , Frédéric Cuisinier , Olivier Briot et al.

EMRS, Jun 2010, Strasbourg, France

Communication dans un congrès hal-00526767v1

Natural oxidation of InN quantum dots: the role of cubic InN

D. Gonzalez , Jg. Lozano , M. Herrera , M.D. Browning , Sandra Ruffenach et al.

EMRS Spring Meeting 2009, Jun 2009, Strasbourg, France. pp.9

Communication dans un congrès hal-00546122v1

Alternative precursors for MOVPE growth of InN and GaN at low temperature

Sandra Ruffenach , Matthieu Moret , Olivier Briot , Bernard Gil , Christoph Giesen et al.

2nd International Symposium on the growth of III-NItrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2791, ⟨10.1016/j.jcrysgro.2009.01.038⟩

Communication dans un congrès istex hal-00390309v1

Investigation on low band gap nitride materials for micro- nanotechnology

El Hadj Dogheche , A. Gokarna , Didier Decoster , S. Ruffenach , O. Briot

Indo-French Workshop on Nanosciences and Nanotechnology, 2009, Delhi, India

Communication dans un congrès hal-00575298v1

InN excitonic deformation potentials determined experimentally

Bernard Gil , Olivier Briot , Matthieu Moret , Sandra Ruffenach , Christoph Giesen et al.

2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩

Communication dans un congrès istex hal-00390295v1

MOVPE growth of InN buffer layers on sapphire

Olivier Briot , Sandra Ruffenach , Matthieu Moret , Bernard Gil , Christoph Giesen et al.

2nd International Symposium on the gGrowth of III-Nitrides, Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2787, ⟨10.1016/j.jcrysgro.2009.01.008⟩

Communication dans un congrès istex hal-00390306v1

Growth of InN films and nanostructures by MOVPE

Olivier Briot , Sandra Ruffenach , Matthieu Moret , Bernard Gil , Christoph Giesen et al.

2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2761, ⟨10.1016/j.jcrysgro.2009.01.037⟩

Communication dans un congrès istex hal-00390294v1

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Matthieu Moret , Bernard Gil , Sandra Ruffenach , Olivier Briot , Christoph Giesen et al.

2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2795, ⟨10.1016/j.jcrysgro.2009.01.009⟩

Communication dans un congrès istex hal-00390296v1

Superconductivity of InN as an intrinsic property

T. Inushima , Duncan Kennedy Maude , N. Kato , H. Lu , W.J. Schaff et al.

28th International Conference on the Physics of Semiconductors, Jul 2006, Austria. pp.137, ⟨10.1063/1.2729807⟩

Communication dans un congrès hal-00546032v1

Initial growth stages of MOVPE InN studied by AFM and specular reflectivity

Arie van Der Lee , F. Salah , B. Harzallah , Sandra Ruffenach , Olivier Briot

6th International Symposium on Blue Laser and Light Emitting Diodes, May 2006, Montpellier, France. pp.150

Communication dans un congrès hal-00390130v1

Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation

S. Hernandez , R. Cusco , L. Artus , E. Nogales , Rw Martin et al.

Meeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.771-774

Communication dans un congrès hal-00540399v1

Characterization of the blue emission of Tm/Er co-implanted GaN

I. S. Roqan , C. Trager-Cowan , B. Hourahine , K. Lorenz , E. Nogales et al.

Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Nov 2005, Boston (MA), United States. pp.599-604

Communication dans un congrès hal-00546130v1

UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers

D. Pastor , S. Hernandez , R. Cusco , L. Artus , R. W. Martin et al.

Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS, May 2006, Nice (FRANCE), France. pp.440-444

Communication dans un congrès hal-00542125v1

A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

E. Nogales , K. Lorenz , K. Wang , I.S. Roqan , Roland Martin et al.

MRS Fall Meeting - GaN, AlN, InN and Related Materials Symposium, Nov 2005, Boston, United States. pp.625

Communication dans un congrès hal-00546139v1

Superconductivity of InN with a well defined Fermi surface

T. Inushima , N. Kato , Duncan Kennedy Maude , Hai Lu , W. J. Schaff et al.

6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1679-1686

Communication dans un congrès hal-00540403v1

Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

J. G. Lozano , D. Gonzalez , A. M. Sanchez , D. Araujo , Sandra Ruffenach et al.

6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1687-1690

Communication dans un congrès hal-00546075v1

Optical properties of high-temperature annealed Eu-implanted GaN

K. Wang , Rw Martin , E. Nogales , V. Katchkanov , Kp O'Donnell et al.

Meeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.797-801

Communication dans un congrès hal-00540398v1

High temperature annealing of rare earth implanted GaN films: Structural and optical properties

K. Lorenz , U. Wahl , E. Alves , E. Nogales , S. Dalmasso et al.

Meeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.750-758

Communication dans un congrès hal-00540402v1

Optical investigations on si-doped InN films

B. Maleyre , Olivier Briot , Sandra Ruffenach , Bernard Gil

7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1379-1383

Communication dans un congrès hal-00540416v1

Growth of InN quantum dots by MOVPE

Sandra Ruffenach , Benedicte Maleyre , Olivier Briot , Bernard Gil

4th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4), Jun 2004, St Petersburg (RUSSIA), Russia. pp.826-832

Communication dans un congrès hal-00540424v1

Growth Studies and Nanoscale Strain Profiles of InN Quantum Dots

Olivier Briot , Sandra Ruffenach , Bernard Gil

MRS Fall Meeting, Symposium FF, Nov 2005, Boston, United States

Communication dans un congrès hal-00390297v1

Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVD

Benedicte Maleyre , Sandra Ruffenach , Olivier Briot , Bernard Gil , A. van Der Lee

International Workshop on Nitrides Semiconductors (IWN 2004), Jul 2004, Pittsburgh (PA), United States. pp.2309-2315

Communication dans un congrès hal-00540427v1

Growth and properties of Indium nitride thin films and InN nanostructures

Olivier Briot , Sandra Ruffenach , Bernard Gil

18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society, Oct 2005, Sydney (AUSTRALIA), Australia. pp.856-857

Communication dans un congrès hal-00390131v1

MOVPE growth of InN films and quantum dots

W. Maleyre , Olivier Briot , Sandra Ruffenach

1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.15-21

Communication dans un congrès hal-00539952v1

Mutual quenching of Er3+ photolurninescence under two laser excitation in GaN : Er

M. Wojdak , A. Braud , Jl Doualan , R. Moncorge , B. Pipeleers et al.

Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.755-761

Communication dans un congrès hal-00540438v1

The value of the direct bandgap of InN: a re-examination

Olivier Briot , Benedicte Maleyre , Sandra Ruffenach , Bernard Gil , C. Pinquier et al.

3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1425-1428

Communication dans un congrès hal-00540437v1

Growth and characterisation of Eu doped GaN thin films

G. Halambalakis , N. Rousseau , Olivier Briot , Sandra Ruffenach , Roger Aulombard et al.

Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.721-728

Communication dans un congrès hal-00540441v1

UV photoreflectance for wide band gap nitride characterization

C. Bru-Chevallier , S. Fanget , G. Guillot , Sandra Ruffenach , Olivier Briot

Symposium on Optical and X-Ray Metrology for Advanced Device Materials Characterization, Jun 2003, Strasbourg (FRANCE), France. pp.75-78

Communication dans un congrès hal-00540433v1

Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVD

B. Maleyre , Sandra Ruffenach , Olivier Briot , A. van Der Lee

Spring Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.527-535

Communication dans un congrès hal-00540446v1

Growth of InN layers by MOVPE using different substrates

B. Maleyre , Sandra Ruffenach , Olivier Briot , Bernard Gil , A. van Der Lee

Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.517-526

Communication dans un congrès hal-00540449v1

Amorphisation of GaN during processing with rare earth ion beams

K. Lorenz , U. Wahl , E. Alves , T. Wojtowicz , P. Ruterana et al.

Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.737-745

Communication dans un congrès hal-00540440v1

Strain-induced correlations between the phonon frequencies of indium nitride

Olivier Briot , Bernard Gil , B. Maleyre , Sandra Ruffenach , C. Pinquier et al.

3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1420-1424

Communication dans un congrès hal-00539944v1

Absorption and Raman scattering processes in InN films and dots

Olivier Briot , B. Maleyre , Sandra Ruffenach , Bernard Gil , C. Pinquier et al.

1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.22-28

Communication dans un congrès hal-00539955v1

Raman scattering in InN films and nanostructures

C. Pinquier , François Demangeot , J. Frandon , Olivier Briot , B. Maleyre et al.

Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.581-589

Communication dans un congrès hal-00540444v1

Equifrequency surfaces in GaN/sapphire photonic crystals

D. Peyrade , J. Torres , D. Coquillat , R. Legros , J.P Lascaray et al.

International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), Jul 2002, TOULOUSE (FRANCE), France. pp.423-425

Communication dans un congrès hal-00477213v1

Modeling of nitride semiconductor based double heterostructure tunnel diodes

Matthieu Moret , Sandra Ruffenach , Olivier Briot , Roger Aulombard

Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.227-232

Communication dans un congrès hal-00540478v1

Er Doped GaN by gas source molecular beam epitaxy on GaN templates.

N. Rousseau , Olivier Briot , V. Ribes , Roger Aulombard

Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.239-244

Communication dans un congrès hal-00540471v1

High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications.

Matthieu Moret , Sandra Ruffenach , Olivier Briot , Bernard Gil , Roger Aulombard

Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.233-238

Communication dans un congrès hal-00540477v1

The microstructure of Er MBE doped GaN

T. Wojtowicz , P. Ruterana , N. Rousseau , Olivier Briot , S. Dalmasso et al.

Meeting of the European-Materials-Research-Society (EMRS), Jun 2003, STRASBOURG (FRANCE), France. pp.114-117

Communication dans un congrès hal-00540453v1

Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications

Olivier Briot , Benedicte Maleyre , Sandra Ruffenach , C. Pinquier , François Demangeot et al.

5th International Conference on Nitride Semiconductors (ICNS-5), May 2003, NARA (JAPAN), Japan. pp.2851-2854

Communication dans un congrès hal-00539936v1

Chemical profiles in AlGaN/GaN quantum wells: a CTEM, HRTEM and EFTEM comparison

Jean-Luc Rouviere , Pascale Bayle-Guillemaud , G. Radtke , S. Groh , Olivier Briot

Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, Mar 2001, OXFORD (ENGLAND), United Kingdom. pp.17-20

Communication dans un congrès hal-00546179v1

Photonic crystal properties of GaN infilled artificial opals

Dominique Coquillat , Rene Legros , Sylvie Etienne-Calas , J. Phalippou , Matthieu Moret et al.

25th International Conference on the Physics of Semiconductors (ICPS25), Sep 2000, OSAKA (JAPAN), Japan. pp.1741-1742

Communication dans un congrès hal-00546180v1

Photoluminescence characterisation of triangular lattices of holes and pillars etched in GaN epilayers

Dominique Coquillat , A. Ribayrol , Rm de La Rue , Pascal Girard , Olivier Briot et al.

3rd International Conference on Nitride Semiconductors (ICNS 99), Jul 1999, MONTPELLIER (FRANCE), France. pp.669-673

Communication dans un congrès hal-00546181v1

Deep ultraviolet Raman scattering for the monitoring of high-temperature processing of AlGaN

M. Kuball , François Demangeot , J. Frandon , Ma Renucci , Dn Batchelder et al.

International Conference on Solid State Spectroscopy - (ICSSS), Sep 1999, SCHWABISCH-GMUND (GERMANY), Germany. pp.105-108

Communication dans un congrès hal-00546197v1

Nanometre scale reactive ion etching of GaN epilayers

Dominique Coquillat , Sk Murad , A. Ribayrol , Cjm Smith , Rm de La Rue et al.

7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1403-1406

Communication dans un congrès hal-00546188v1

Optical transitions and exciton binding energies in GaN grown along various crystallographic orientations

Bernard Gil , Olivier Briot , Roger Aulombard , S. Nakamura

7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1265-1270

Communication dans un congrès hal-00546186v1

Modeling of the incorporation of aluminum in Ga1-xAlxM (M=As or N) alloys grown by MOCVD

Sandra Ruffenach , Olivier Briot , Bernard Gil , Roger Aulombard

7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM, Sweden. pp.1153-1156

Communication dans un congrès hal-00546769v1

Excitonic quantum efficiency of GaN

A. Goldner , L. Eckey , A. Hoffmann , Bernard Gil , Olivier Briot

7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1283-1286

Communication dans un congrès hal-00546187v1

The exciton-polariton effect on the fluorescence properties of GaN on sapphire

Bernard Gil , A. Hoffmann , Sandra Ruffenach , L. Eckey , Olivier Briot et al.

2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY, Japan. pp.639-643

Communication dans un congrès hal-00545873v1

Characterization of ALN buffer layers on (0001)-sapphire substrates

Ym Le Vaillant , R. Bisaro , J. Olivier , O. Durand , Jy Duboz et al.

2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY (JAPAN), Japan. pp.282-286

Communication dans un congrès hal-00546761v1

Influence of the V/III molar ratio on the structural and electronic properties of MOVPE grown GaN

Olivier Briot , Jp Alexis , Sébastien Sanchez , Bernard Gil , Roger Aulombard

Topical Workshop on III-V Nitrides (TWN 95), Sep 1995, NAGOYA (JAPAN), Japan. pp.315-317

Communication dans un congrès hal-00546210v1

GaN layer growth in relation to buffer deposition temperature

François Demangeot , Ma Renucci , J. Frandon , Olivier Briot

European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.246-249

Communication dans un congrès hal-00546207v1

Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

Jl Rouviere , M. Arlery , R. Niebuhr , Kh Bachem , Olivier Briot

European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.161-166

Communication dans un congrès hal-00546205v1

Optimization of the MOVPE growth of GaN on sapphire

Olivier Briot , Jp Alexis , M. Tchounkeu , Roger Aulombard

European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.147-153

Communication dans un congrès hal-00546204v1

Luminescence and absorption of GaN films under high excitation

S. Petit , D. Guennani , P. Gilliot , C. Hirlimann , B. Honerlage et al.

European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.196-200

Communication dans un congrès hal-00546206v1

MOVPE growth and optical properties of GaN deposited on c-plane sapphire

Olivier Briot , Bernard Gil , M. Tchounkeu , Roger Aulombard , François Demangeot et al.

38th Electronic Materials Conference (EMC), Jun 1996, SANTA BARBARA (CA), United States. pp.294-300

Communication dans un congrès hal-00546209v1

Optical properties and thermal transport of carriers in (Zn,Cd)Se-ZnSe heterostructures

L. Aigouy , Bernard Gil , Olivier Briot , Thierry Cloitre , N. Briot et al.

Electronic Materials Conference, 1995, Charlottesville, United States. pp.183

Communication dans un congrès hal-00547089v1

Optical characterization of MOVPE-grown ZnS-ZnSe short period superlattices

Thierry Cloitre , Pierre Bigenwald , Bernard Gil , Olivier Briot , N. Briot et al.

7th International Conference on II-VI Compounds and Devices, 1996, Edinburgh, United Kingdom. pp.506

Communication dans un congrès hal-00547069v1

MOVPE growth of zincblende magnesium sulphide

Leszek Konczewicz , Pierre Bigenwald , Thierry Cloitre , M. Chibane , M. Ricou et al.

7th International Conference on II-VI Compounds and Devices, 1995, Edinburgh, United Kingdom. pp.117

Communication dans un congrès hal-00547062v1

Optimization and optical studies of ZnCdSe-ZnSe heterostructures grown by MOVPE

Thierry Cloitre , L. Aigouy , Bernard Gil , Olivier Briot , N. Briot et al.

7th International Conference on II-VI Compounds and Devices, 1995, Edinburgh, United Kingdom. pp.438

Communication dans un congrès hal-00547065v1

Reflectance study of MOVPE grown GaN using triethylgallium and ammonia

Olivier Briot , Bernard Gil , Sébastien Sanchez , Roger Aulombard

International Conference on Silicon Carbide and Related Materials 1995 (ICSCRM-95), 1995, Kyoto, Japan. pp.891

Communication dans un congrès hal-00547056v1

Exciton recombination mechanism and binding energies in MOCVD-grown Zn1-xCdxSe-ZnSe single quantum wells.

F. Liaci , L. Aigouy , Pierre Bigenwald , Bernard Gil , N. Briot et al.

IV International Conference on Optics of Excitons in Confined Systems, 1995, Cortona, Italy. pp.1585

Communication dans un congrès hal-00547074v1

OPTICAL-PROPERTIES, ELECTRONIC-STRUCTURE, AND EXCITON BINDING-ENERGIES IN SHORT-PERIOD ZNS-ZNSE SUPERLATTICES

Thierry Cloitre , L. Aigouy , M. Diblasio , Bernard Gil , Pierre Bigenwald et al.

36th Electronic Materials Conference (EMC), 1994, Boulder, CO, United States. pp.123

Communication dans un congrès hal-00547268v1

Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

Xb Zhang , Olivier Briot , Bernard Gil , Roger Aulombard

1st International Conference on Low Dimensional Structures and Devices, 1995, Singapore, Singapore. pp.184

Communication dans un congrès hal-00547105v1

PHOTOINDUCED SCREENING OF THE EXCITONIC INTERACTION IN ZNSE-ZNTE TYPE-II STRAINED-LAYER SUPERLATTICES

Bernard Gil , Thierry Cloitre , N. Briot , Olivier Briot , P. Boring et al.

6th International Conference on I-VI Compounds and Related Optoelectronic Materials, 1993, Newport, RI, United States. pp.868

Communication dans un congrès hal-00547281v1

SUPERLATTICE EFFECTS ON PHONONS IN STRAINED ZNTE-ZNSE STRUCTURES

J. Frandon , Ma Renucci , N. Briot , Olivier Briot , Roger Aulombard

6th International Conference on I-VI Compounds and Related Optoelectronic Materials, 1993, Newport, RI, United States. pp.513

Communication dans un congrès hal-00547280v1

CONTAMINATION EFFECTS FROM TELLURIUM IN ZNS-ZNSE SUPERLATTICES

D. Bouchara , A. Abounadi , M. Diblasio , N. Briot , Thierry Cloitre et al.

6th International Conference on I-VI Compounds and Related Optoelectronic Materials, 1993, Newport, RI, United States. pp.121

Communication dans un congrès hal-00547278v1

MOVPE-GROWTH AND PHYSICS OF ZNSE-ZNTE SUPERLATTICES

Thierry Cloitre , Olivier Briot , Bernard Gil , D. Bertho , J.M. Jancu et al.

7TH TRIESTE ICTP-IUPAP SEMICONDUCTOR SYMP INT CTR THEORET PHYS, 1992, Trieste, Italy. pp.109

Communication dans un congrès hal-00547289v1

LOW-PRESSURE MOVPE GROWTH OF ZNSE, ZNTE, AND ZNSE/ZNTE STRAINED-LAYER SUPERLATTICES

N. Briot , Thierry Cloitre , Olivier Briot , Bernard Gil , D. Bertho et al.

34TH ELECTRONIC MATERIALS CONF MIT, 1992, Cambridge, MA, United States. pp.537

Communication dans un congrès hal-00547291v1

OPTICAL CHARACTERIZATION OF EXTREMELY HIGH-PURITY ZNSE GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLZINC TRIETHYLAMINE ADDUCT

Thierry Cloitre , N. Briot , Olivier Briot , Bernard Gil , Roger Aulombard et al.

SYMP ON MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS ( OPTOELECTRONICS INTEGRATED CIRCUITS ) AND PHOTONICS, 1993, Strasbourg, France. pp.169

Communication dans un congrès hal-00547287v1

DEPTH PROFILING OF CARRIERS IN ZNSE/GAAS HETEROSTRUCTURES BY RAMAN-SPECTROSCOPY

O. Pagès , Ma Renucci , Olivier Briot , Thierry Cloitre , Roger Aulombard

5TH INTERNATIONAL CONF ON II-VI-COMPOUNDS ( II-VI-91 ), 1991, Tamano, Japan. pp.569

Communication dans un congrès hal-00547295v1

RAMAN CHARACTERIZATION OF ZNSE/GAAS MOVPE HETEROSTRUCTURES

O. Pagès , M. Renucci , Olivier Briot , N. Tempier , Roger Aulombard

5TH INTERNATIONAL CONF ON METALORGANIC VAPOR PHASE EPITAXY / WORKSHOP ON METALORGANIC BEAM EPITAXY, CHEMICAL BEAM EPITAXY AND GAS SOURCE MOLECULAR BEAM EPITAXY, 1990, Aachen, Germany. pp.670

Communication dans un congrès hal-00547298v1

APPLICATION OF A NEW THEORETICAL TRANSPORT STUDY TO THE ASSESSMENT OF THE PURITY OF ZNSE

Olivier Briot , N. Briot , Thierry Cloitre , R. Sauvezon , Roger Aulombard

DVANCED RESEARCH WORKSHOP OF THE EUROPEAN MATERIALS RESEARCH SOC : WIDE GAP 2-6 SEMICONDUCTORS, 1991, Montpellier, France. pp.A24

Communication dans un congrès hal-00547296v1

MOVPE OF HIGH-QUALITY ZNSE - ROLE OF MISMATCH ON REFLECTIVITY AND PHOTOCONDUCTIVITY

Roger Aulombard , M. Averous , Olivier Briot , J. Calas , Dominique Coquillat et al.

4TH INTERNATIONAL CONF ON II-VI COMPOUNDS ( II-VI-89 ), 1989, Berlin, Germany. pp.204

Communication dans un congrès hal-00547299v1
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Towards an understanding of vanadium doping effects in 4H-SiC

Harmke van Dijk , Matthieu Paillet , Océane Février , Sandrine Juillaguet , S. Contreras et al.

Les Journées Nano, Micro et Optoélectronique (JNMO), Oct 2024, Sète, France

Poster de conférence hal-04829444v1

Indium Nitride Layer production

Bernard Gil , Olivier Briot , Sandra Ruffenach , B. Maleyre , Thierry Cloitre et al.

N° de brevet: JP2008513327. 2008

Brevet hal-00390338v1

Method for the growth of Indium nitride

Sandra Ruffenach , Olivier Briot , Bernard Gil

N° de brevet: WO2008009805. 2008

Brevet hal-00390341v1

Nouveau Procédé pour la croissance de nitrures d'éléments du groupe IIIb

Sandra Ruffenach , Olivier Briot , Bernard Gil

N° de brevet: FR2904008. 2008

Brevet hal-00390340v1

Indium Nitride Layer production

Bernard Gil , Olivier Briot , Sandra Ruffenach , B. Maleyre , Thierry Cloitre et al.

Patent n° : US2007269965. 2007

Brevet hal-00390336v1

Indium Nitride Layer production

Bernard Gil , Olivier Briot , Sandra Ruffenach , B. Maleyre , Thierry Cloitre et al.

N° de brevet: EP1799886. 2007

Brevet hal-00390337v1

Réalisation d'une couche de nitrure d'indium

Bernard Gil , Olivier Briot , Sandra Ruffenach , B. Maleyre , Thierry Cloitre et al.

N° de brevet: FR2875333. 2006

Brevet hal-00390335v1

Method to manufacture Indium Nitride quantum dots

Olivier Briot , Bernard Gil , Sandra Ruffenach

Patent n° : EP1658394. 2006

Brevet hal-00390332v1

Indium Nitride Layer production

Bernard Gil , Olivier Briot , Sandra Ruffenach , B. Maleyre , Thierry Cloitre et al.

N° de brevet: WO2006032756. 2006

Brevet hal-00390339v1

Method to manufacture Indium Nitride quantum dots

Olivier Briot , Bernard Gil , Sandra Ruffenach

Patent n° : US2005028726. 2005

Brevet hal-00390331v1

Method to manufacture Indium Nitride quantum dots

Olivier Briot , Bernard Gil , Sandra Ruffenach

Patent n° : AU2003274409. 2005

Brevet hal-00390333v1

Method to manufacture Indium Nitride quantum dots

Olivier Briot , Bernard Gil , Sandra Ruffenach

Patent n° : WO2005014897. 2005

Brevet hal-00390329v1