
Olivier BRIOT
204
Documents
Publications
Publications
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Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) SubstratesECSCRM 2021, Oct 2021, Tours (FR), France. pp.59-63, ⟨10.4028/p-1ak21z⟩
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hal-03845325
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Optical investigations and strain effect in AlGaN/GaN epitaxial layers33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩
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hal-01935164
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High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se-2PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV, 2015, San Francisco, California, United States. pp.93581A, ⟨10.1117/12.2076938⟩
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hal-01134308
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In-situ monitoring of CuInSe2 thin films growth by light scatteringE-MRS 2014 Spring Meeting, Symposium A, Thin-Film Chalcogenide Photovoltaic Materials, Daniel Abou-Ras; Marika Edoff; Takashi Minemoto; David Mitzi; Alessandro Romeo, May 2014, Lille, France. pp.276, ⟨10.1016/j.tsf.2014.10.083⟩
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hal-01101052
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X-ray diffraction study of A- plane non polar InN epilayer grown by MOCVDGALLIUM NITRIDE MATERIALS AND DEVICES X, conferenceOrganizer, 2015, San Francisco, United States. pp.936328, ⟨10.1117/12.2077513⟩
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hal-01134316
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(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuumE-MRS Spring Meeting, May 2012, Strasbourg, France. pp.143-147, ⟨10.1016/j.tsf.2013.01.053⟩
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hal-00820323
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Annealing effect of CdS thin films deposited by chemical bath deposition on different substratesPhotovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, Jun 2013, Tampa, United States. pp.1173, ⟨10.1109/PVSC.2013.6744349⟩
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hal-01009387
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Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InNE-MRS ICAM IUMRS 2011 Spring Meeting – Symposium H, May 2011, Nice, France. pp.91-94, ⟨10.1002/pssa.201100175⟩
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istex
hal-00698910
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Phages recognizing the Indium Nitride semiconductor surface via their peptidesE-MRS Symposium on Peptide-based Materials - from Nanostructures to Applications, Jun 2010, Strasbourg (FRANCE), France. pp.143-147
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hal-00633883
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Free electron properties and hydrogen in InN grown by MOVPEISGN3, Jul 2010, France. pp.1179-1182, ⟨10.1002/pssa.201001151⟩
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hal-00633877
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Managing gas purity in epitaxial growthItalian Crystal Growth Conference (ICGC 2010), Nov 2010, Parme, Italy. pp.809-812, ⟨10.1002/crat.201000610⟩
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hal-00633875
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MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrateISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩
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hal-00633882
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MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphireSymposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.24-28
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hal-00540220
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Recent advances in the MOVPE growth of indium nitrideSymposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.9-18
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hal-00540219
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Peptides recognizing the InN semiconductor surfaceEMRS, Jun 2010, Strasbourg, France
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hal-00526767
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Natural oxidation of InN quantum dots: the role of cubic InNEMRS Spring Meeting 2009, Jun 2009, Strasbourg, France. pp.9
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hal-00546122
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Investigation on low band gap nitride materials for micro- nanotechnologyIndo-French Workshop on Nanosciences and Nanotechnology, 2009, Delhi, India
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hal-00575298
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Alternative precursors for MOVPE growth of InN and GaN at low temperature2nd International Symposium on the growth of III-NItrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2791, ⟨10.1016/j.jcrysgro.2009.01.038⟩
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hal-00390309
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InN excitonic deformation potentials determined experimentally2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩
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hal-00390295
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MOVPE growth of InN buffer layers on sapphire2nd International Symposium on the gGrowth of III-Nitrides, Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2787, ⟨10.1016/j.jcrysgro.2009.01.008⟩
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hal-00390306
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Growth of InN films and nanostructures by MOVPE2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2761, ⟨10.1016/j.jcrysgro.2009.01.037⟩
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hal-00390294
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Optical, structural investigations and band-gap bowing parameter of GaInN alloys2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2795, ⟨10.1016/j.jcrysgro.2009.01.009⟩
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hal-00390296
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Superconductivity of InN as an intrinsic property28th International Conference on the Physics of Semiconductors, Jul 2006, Austria. pp.137, ⟨10.1063/1.2729807⟩
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hal-00546032
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Initial growth stages of MOVPE InN studied by AFM and specular reflectivity6th International Symposium on Blue Laser and Light Emitting Diodes, May 2006, Montpellier, France. pp.150
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hal-00390130
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Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1687-1690
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hal-00546075
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UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layersSymposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS, May 2006, Nice (FRANCE), France. pp.440-444
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hal-00542125
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Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantationMeeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.771-774
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hal-00540399
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A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaNMRS Fall Meeting - GaN, AlN, InN and Related Materials Symposium, Nov 2005, Boston, United States. pp.625
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hal-00546139
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Characterization of the blue emission of Tm/Er co-implanted GaNSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Nov 2005, Boston (MA), United States. pp.599-604
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hal-00546130
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Superconductivity of InN with a well defined Fermi surface6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1679-1686
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hal-00540403
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Optical properties of high-temperature annealed Eu-implanted GaNMeeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.797-801
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hal-00540398
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High temperature annealing of rare earth implanted GaN films: Structural and optical propertiesMeeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.750-758
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hal-00540402
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Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVDInternational Workshop on Nitrides Semiconductors (IWN 2004), Jul 2004, Pittsburgh (PA), United States. pp.2309-2315
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hal-00540427
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Growth and properties of Indium nitride thin films and InN nanostructures18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society, Oct 2005, Sydney (AUSTRALIA), Australia. pp.856-857
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hal-00390131
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Growth of InN quantum dots by MOVPE4th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4), Jun 2004, St Petersburg (RUSSIA), Russia. pp.826-832
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hal-00540424
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Optical investigations on si-doped InN films7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1379-1383
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hal-00540416
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Growth Studies and Nanoscale Strain Profiles of InN Quantum DotsMRS Fall Meeting, Symposium FF, Nov 2005, Boston, United States
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hal-00390297
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UV photoreflectance for wide band gap nitride characterizationSymposium on Optical and X-Ray Metrology for Advanced Device Materials Characterization, Jun 2003, Strasbourg (FRANCE), France. pp.75-78
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hal-00540433
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Mutual quenching of Er3+ photolurninescence under two laser excitation in GaN : ErMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.755-761
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hal-00540438
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Growth and characterisation of Eu doped GaN thin filmsMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.721-728
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hal-00540441
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The value of the direct bandgap of InN: a re-examination3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1425-1428
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hal-00540437
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MOVPE growth of InN films and quantum dots1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.15-21
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hal-00539952
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Growth of InN layers by MOVPE using different substratesMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.517-526
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hal-00540449
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Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVDSpring Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.527-535
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hal-00540446
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Amorphisation of GaN during processing with rare earth ion beamsMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.737-745
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hal-00540440
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Strain-induced correlations between the phonon frequencies of indium nitride3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1420-1424
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hal-00539944
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Raman scattering in InN films and nanostructuresMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.581-589
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hal-00540444
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Absorption and Raman scattering processes in InN films and dots1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.22-28
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hal-00539955
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Equifrequency surfaces in GaN/sapphire photonic crystalsInternational Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), Jul 2002, TOULOUSE (FRANCE), France. pp.423-425
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hal-00477213
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Modeling of nitride semiconductor based double heterostructure tunnel diodesSymposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.227-232
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hal-00540478
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Er Doped GaN by gas source molecular beam epitaxy on GaN templates.Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.239-244
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hal-00540471
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High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications.Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.233-238
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hal-00540477
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The microstructure of Er MBE doped GaNMeeting of the European-Materials-Research-Society (EMRS), Jun 2003, STRASBOURG (FRANCE), France. pp.114-117
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hal-00540453
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Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications5th International Conference on Nitride Semiconductors (ICNS-5), May 2003, NARA (JAPAN), Japan. pp.2851-2854
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hal-00539936
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Photonic crystal properties of GaN infilled artificial opals25th International Conference on the Physics of Semiconductors (ICPS25), Sep 2000, OSAKA (JAPAN), Japan. pp.1741-1742
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hal-00546180
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Chemical profiles in AlGaN/GaN quantum wells: a CTEM, HRTEM and EFTEM comparisonRoyal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, Mar 2001, OXFORD (ENGLAND), United Kingdom. pp.17-20
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hal-00546179
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Deep ultraviolet Raman scattering for the monitoring of high-temperature processing of AlGaNInternational Conference on Solid State Spectroscopy - (ICSSS), Sep 1999, SCHWABISCH-GMUND (GERMANY), Germany. pp.105-108
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hal-00546197
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Photoluminescence characterisation of triangular lattices of holes and pillars etched in GaN epilayers3rd International Conference on Nitride Semiconductors (ICNS 99), Jul 1999, MONTPELLIER (FRANCE), France. pp.669-673
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hal-00546181
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Nanometre scale reactive ion etching of GaN epilayers7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1403-1406
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hal-00546188
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Modeling of the incorporation of aluminum in Ga1-xAlxM (M=As or N) alloys grown by MOCVD7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM, Sweden. pp.1153-1156
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hal-00546769
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Optical transitions and exciton binding energies in GaN grown along various crystallographic orientations7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1265-1270
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hal-00546186
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Excitonic quantum efficiency of GaN7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1283-1286
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hal-00546187
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The exciton-polariton effect on the fluorescence properties of GaN on sapphire2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY, Japan. pp.639-643
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hal-00545873
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Characterization of ALN buffer layers on (0001)-sapphire substrates2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY (JAPAN), Japan. pp.282-286
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hal-00546761
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MOVPE growth and optical properties of GaN deposited on c-plane sapphire38th Electronic Materials Conference (EMC), Jun 1996, SANTA BARBARA (CA), United States. pp.294-300
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hal-00546209
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GaN layer growth in relation to buffer deposition temperatureEuropean-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.246-249
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hal-00546207
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Influence of the V/III molar ratio on the structural and electronic properties of MOVPE grown GaNTopical Workshop on III-V Nitrides (TWN 95), Sep 1995, NAGOYA (JAPAN), Japan. pp.315-317
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hal-00546210
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Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphireEuropean-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.161-166
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hal-00546205
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Optimization of the MOVPE growth of GaN on sapphireEuropean-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.147-153
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hal-00546204
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Luminescence and absorption of GaN films under high excitationEuropean-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.196-200
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hal-00546206
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Optical characterization of MOVPE-grown ZnS-ZnSe short period superlattices7th International Conference on II-VI Compounds and Devices, 1996, Edinburgh, United Kingdom. pp.506
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hal-00547069
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MOVPE growth of zincblende magnesium sulphide7th International Conference on II-VI Compounds and Devices, 1995, Edinburgh, United Kingdom. pp.117
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hal-00547062
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Optical properties and thermal transport of carriers in (Zn,Cd)Se-ZnSe heterostructuresElectronic Materials Conference, 1995, Charlottesville, United States. pp.183
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hal-00547089
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Reflectance study of MOVPE grown GaN using triethylgallium and ammoniaInternational Conference on Silicon Carbide and Related Materials 1995 (ICSCRM-95), 1995, Kyoto, Japan. pp.891
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hal-00547056
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Optimization and optical studies of ZnCdSe-ZnSe heterostructures grown by MOVPE7th International Conference on II-VI Compounds and Devices, 1995, Edinburgh, United Kingdom. pp.438
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hal-00547065
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OPTICAL-PROPERTIES, ELECTRONIC-STRUCTURE, AND EXCITON BINDING-ENERGIES IN SHORT-PERIOD ZNS-ZNSE SUPERLATTICES36th Electronic Materials Conference (EMC), 1994, Boulder, CO, United States. pp.123
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hal-00547268
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Exciton recombination mechanism and binding energies in MOCVD-grown Zn1-xCdxSe-ZnSe single quantum wells.IV International Conference on Optics of Excitons in Confined Systems, 1995, Cortona, Italy. pp.1585
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hal-00547074
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Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells1st International Conference on Low Dimensional Structures and Devices, 1995, Singapore, Singapore. pp.184
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hal-00547105
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SUPERLATTICE EFFECTS ON PHONONS IN STRAINED ZNTE-ZNSE STRUCTURES6th International Conference on I-VI Compounds and Related Optoelectronic Materials, 1993, Newport, RI, United States. pp.513
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hal-00547280
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CONTAMINATION EFFECTS FROM TELLURIUM IN ZNS-ZNSE SUPERLATTICES6th International Conference on I-VI Compounds and Related Optoelectronic Materials, 1993, Newport, RI, United States. pp.121
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hal-00547278
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PHOTOINDUCED SCREENING OF THE EXCITONIC INTERACTION IN ZNSE-ZNTE TYPE-II STRAINED-LAYER SUPERLATTICES6th International Conference on I-VI Compounds and Related Optoelectronic Materials, 1993, Newport, RI, United States. pp.868
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hal-00547281
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MOVPE-GROWTH AND PHYSICS OF ZNSE-ZNTE SUPERLATTICES7TH TRIESTE ICTP-IUPAP SEMICONDUCTOR SYMP INT CTR THEORET PHYS, 1992, Trieste, Italy. pp.109
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hal-00547289
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LOW-PRESSURE MOVPE GROWTH OF ZNSE, ZNTE, AND ZNSE/ZNTE STRAINED-LAYER SUPERLATTICES34TH ELECTRONIC MATERIALS CONF MIT, 1992, Cambridge, MA, United States. pp.537
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hal-00547291
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OPTICAL CHARACTERIZATION OF EXTREMELY HIGH-PURITY ZNSE GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLZINC TRIETHYLAMINE ADDUCTSYMP ON MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS ( OPTOELECTRONICS INTEGRATED CIRCUITS ) AND PHOTONICS, 1993, Strasbourg, France. pp.169
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hal-00547287
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DEPTH PROFILING OF CARRIERS IN ZNSE/GAAS HETEROSTRUCTURES BY RAMAN-SPECTROSCOPY5TH INTERNATIONAL CONF ON II-VI-COMPOUNDS ( II-VI-91 ), 1991, Tamano, Japan. pp.569
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hal-00547295
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APPLICATION OF A NEW THEORETICAL TRANSPORT STUDY TO THE ASSESSMENT OF THE PURITY OF ZNSEDVANCED RESEARCH WORKSHOP OF THE EUROPEAN MATERIALS RESEARCH SOC : WIDE GAP 2-6 SEMICONDUCTORS, 1991, Montpellier, France. pp.A24
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hal-00547296
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RAMAN CHARACTERIZATION OF ZNSE/GAAS MOVPE HETEROSTRUCTURES5TH INTERNATIONAL CONF ON METALORGANIC VAPOR PHASE EPITAXY / WORKSHOP ON METALORGANIC BEAM EPITAXY, CHEMICAL BEAM EPITAXY AND GAS SOURCE MOLECULAR BEAM EPITAXY, 1990, Aachen, Germany. pp.670
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hal-00547298
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MOVPE OF HIGH-QUALITY ZNSE - ROLE OF MISMATCH ON REFLECTIVITY AND PHOTOCONDUCTIVITY4TH INTERNATIONAL CONF ON II-VI COMPOUNDS ( II-VI-89 ), 1989, Berlin, Germany. pp.204
Communication dans un congrès
hal-00547299
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Towards an understanding of vanadium doping effects in 4H-SiCLes Journées Nano, Micro et Optoélectronique (JNMO), Oct 2024, Sète, France
Poster de conférence
hal-04829444
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Response to "Comment on 'Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition'" Appl. Phys. Lett. 87, 176101 (2005)2005, pp.87, 176102. ⟨10.1063/1.2117613⟩
Autre publication scientifique
hal-00540414
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Comment on "Mie resonances, infrared emission, and the band gap of InN" - Reply2004, pp.93, 269702. ⟨10.1103/PhysRevLett.93.269702⟩
Autre publication scientifique
hal-00540475
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Etude du comportement des résines à usage temporaire et des céramiques soumises à l'usure en milieu salivaire artificielMédecine humaine et pathologie. 2015
Mémoire d'étudiant
hal-01898589
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