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Olivier Latry

62
Documents

Presentation

I hold an MSc degree in electrical engineering from ESIGELEC Rouen, France from 1991 and a PhD degree in electrical engineering from the University of Rouen, France, from 1995. Since late 2008, I joined the « Groupe de Physique des Matériaux » UMR CNRS at the University of Rouen Normandy. I has carried out research on transistors and my major research interests today include microelectronic reliability on power transistors like Gallium Nitride High Electron Mobility Transistors (HEMT GaN) or Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors, (MOSFET SiC). At University Institute of Technology of Rouen, I give courses on electronics, controlled systems, microwave and radar systems. I'm one of the founder of the Microwave and Radar Training Center of Normandy (MRTC).

Publications

Parametric nano-electrical analysis for SiC junctions of a packaged device

Rosine Coq Germanicus , Wadia Jouha , Niemat Moultif , Peter de Wolf , Vishal Shah
IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, 2022, pp.1-6. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
Journal articles hal-04124443v1

Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

Rosine Coq Germanicus , Kimmo Niskanen , Alain Michez , Niemat Moultif , Wadia Jouha
Materials Science Forum, 2022, 1062, pp.544-548. ⟨10.4028/p-973n9u⟩
Journal articles hal-03702520v1

Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress

Niemat Moultif , Olivier Latry , Eric Joubert , Mohamed Ndiaye , Christian Moreau
IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩
Journal articles hal-03174499v1
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Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating

Niemat Moultif , Sébastien Duguay , O. Latry , M. Ndiaye , Eric Joubert
Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩
Journal articles hal-03469148v1
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Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

Rosine Coq Germanicus , Florent Lallemand , Daniel Chateigner , Frédéric Richardeau , Niemat Moultif
Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩
Journal articles hal-03341563v1

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization

Al Mehdi Bouchour , Ahmed El Oualkadi , O. Latry , Pascal Dherbécourt , Andres Echeverri
Computers and Electrical Engineering, 2020, 84, pp.106622. ⟨10.1016/j.compeleceng.2020.106622⟩
Journal articles hal-02614065v1
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S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

Niemat Moultif , O. Latry , Mamadou Ndiaye , Tristan Neveu , Eric Joubert
Microelectronics Reliability, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩
Journal articles hal-02380186v1
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Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency

A.M. Bouchour , A. El Oualkadi , Pascal Dherbécourt , O. Latry , A. Echeverri
Microelectronics Reliability, 2019, 100-101, pp.113403. ⟨10.1016/j.microrel.2019.113403⟩
Journal articles hal-03174379v1

Evidence of Mg segregation to threading dislocation in normally-off GaN-HEMT

Sébastien Duguay , Andres Echeverri , Celia Castro , Olivier Latry
IEEE Transactions on Nanotechnology, 2019, 18, pp.995-998. ⟨10.1109/TNANO.2019.2942400⟩
Journal articles hal-02299201v1

Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

Niemat Moultif , Andres Echeverri , Dominique Carisetti , O. Latry , Eric Joubert
IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩
Journal articles hal-02614080v1

Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

O. Latry , Pascal Dherbécourt , Patrick Denis , Fabien Cuvilly , Moncef Kadi
Engineering Failure Analysis, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩
Journal articles hal-02131204v1

Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures

Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry
Microelectronics Reliability, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩
Journal articles hal-01765955v1

Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures

Niemat Moultif , Alexis Divay , Eric Joubert , O. Latry
Engineering Failure Analysis, 2017, 81, pp.69 - 78. ⟨10.1016/j.engfailanal.2017.07.014⟩
Journal articles hal-01766076v1

Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing

Lu Zhao , Antoine Normand , Jonathan Houard , Ivan Blum , Fabien Delaroche
Microscopy and Microanalysis, 2017, 23 (2), pp.221-226. ⟨10.1017/S1431927616012666⟩
Journal articles hal-02611781v1

Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena

O. Latry , A. Divay , D. Fadil , Pascal Dherbécourt
Journal of Semiconductors, 2017, 38 (1), ⟨10.1088/1674-4926/38/1/014007⟩
Journal articles hal-01766037v1

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET

S. Mbarek , Pascal Dherbécourt , O. Latry , F. Fouquet
Microelectronics Reliability, 2017, 76-77, pp.527 - 531. ⟨10.1016/j.microrel.2017.07.002⟩
Journal articles hal-01766126v1
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Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Farid Temcamani , Jean Baptiste Fonder , O. Latry , Cédric Duperrier
IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (3), pp.756-766. ⟨10.1109/TMTT.2016.2519342⟩
Journal articles hal-01299413v1

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

A. Divay , Cédric Duperrier , Farid Temcamani , O. Latry
Microelectronics Reliability, 2016, 64, pp.585 - 588. ⟨10.1016/j.microrel.2016.07.123⟩
Journal articles hal-01690679v1

Ageing of GaN HEMT devices: which degradation indicators?

A. Divay , O. Latry , Cédric Duperrier , Farid Temcamani
Journal of Semiconductors, 2016, 37 (1), ⟨10.1088/1674-4926/37/1/014001⟩
Journal articles hal-01740848v1

Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy

Niemat Moultif , Eric Joubert , O. Latry
Advanced Electromagnetics, 2016, 5 (3), pp.20. ⟨10.7716/aem.v5i3.380⟩
Journal articles hal-02177964v1

Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests

S. Mbarek , F. Fouquet , Pascal Dherbécourt , Mohamed Lamine Masmoudi , O. Latry
Microelectronics Reliability, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩
Journal articles hal-01954256v1

RF Pulse Signal Integrity Analysis for Nonlinear Ended Microstrip Line Atom-Probe Tomography

Lu Zhao , A. Delamare , Antoine Normand , Fabien Delaroche , O. Latry
IOP Conference Series: Materials Science and Engineering, 2016, 120, pp.012006. ⟨10.1088/1757-899X/120/1/012006⟩
Journal articles hal-01954239v1
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An athermal measurement technique for long traps characterization in GaN HEMT transistors.

A Divay , Mohamed Lamine Masmoudi , Olivier Latry , C Duperrier , Farid Temcamani
Microelectronics Reliability, 2015, 55, pp.1703-1707. ⟨10.1016/j.microrel.2015.06.074⟩
Journal articles hal-01341768v1

Temperature and Dilatation Estimation for Modern Semiconductor Devices

Eric Joubert , O. Latry , Jean-Philippe Roux
Sensors & Transducers., 2015, 184 (1), pp.130-135
Journal articles hal-02178029v1

2 - Aging Power Transistors in Operational Conditions

Jean Baptiste Fonder , Cédric Duperrier , Farid Temcamani , O. Latry , H. Maanane
Embedded Mechatronic Systems, 2015, 2, pp.23-48. ⟨10.1016/b978-1-78548-014-0.50002-5 ⟩
Journal articles hal-02979964v1

Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis

P. Denis , Pascal Dherbécourt , O. Latry , C. Genevois , Fabien Cuvilly
Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩
Journal articles hal-02156382v1

Performance drifts of N-MOSFETs under pulsed RF life test

M.A. Belaïd , M. Gares , K. Daoud , O. Latry
Microelectronics Reliability, 2014, 54 (9-10), pp.1851-1855. ⟨10.1016/j.microrel.2014.07.131⟩
Journal articles hal-02267372v1

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests

M.A. Belaïd , A.M. Nahhas , M. Gares , K. Daoud , O. Latry
Microelectronics Journal, 2014, 45 (12), pp.1800-1805. ⟨10.1016/j.mejo.2014.06.002⟩
Journal articles hal-02267365v1

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band Pulsed-RF Operating Life.

Jean Baptiste Fonder , O. Latry , Cédric Duperrier , Michel Stanislawiak , Hichame Maanane
Microelectronics Reliability, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩
Journal articles hal-00735899v1

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.

Jean Baptiste Fonder , Laurence Chevalier , Cécile Genevois , O. Latry , Cédric Duperrier
Microelectronics Reliability, 2012, pp.2205. ⟨10.1016/j.microrel.2012.06.053⟩
Journal articles hal-00735905v1

Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network

F. Khecib , O. Latry , Pascal Dherbécourt , M. Kétata
Optics Communications, 2011, 284 (21), pp.5125-5129. ⟨10.1016/j.optcom.2011.06.064⟩
Journal articles hal-02267382v1

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application

L. Lacheze , O. Latry , Pascal Dherbécourt , K. Mourgues , V. Purohit
Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
Journal articles hal-02267392v1

A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications

O. Latry , Pascal Dherbécourt , K. Mourgues , H. Maanane , P. Sipma
Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Journal articles hal-02267399v1

Comparison of different feedback signals used in one stage PMD compensators for different modulation formats

Guillaume Ducournau , O. Latry , E. Joubert , M. Ketata
IEEE Transactions on Communications, 2008, 56, pp.1722-1728. ⟨10.1109/TCOMM.2008.060476⟩
Journal articles hal-00356948v1
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SiC MOSFET micro-explosion due to a single event burnout: analysis at the device and die levels

Rosine Coq Germanicus , Tanguy Phulpin , Thomas Rogaume , Kimmo Niskanen , Sandrine Froissart
ISTFA 2023 - the 49th International Symposium for Testing and Failure Analysis Conference, Nov 2023, Phoenix, United States. pp.483-490, ⟨10.31399/asm.cp.istfa2023p0483⟩
Conference papers hal-04285320v1

Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

Al Mehdi Bouchour , Pascal Dherbécourt , Ahmed El Oualkadi , Olivier Latry
2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩
Conference papers hal-03354896v1

SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

Niemat Moultif , Eric Joubert , Olivier Latry
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩
Conference papers hal-02181679v1

Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm

Al Mehdi Bouchour , Pascal Dherbécourt , Andres Echeverri , Ahmed El Oualkadi , O. Latry
2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6
Conference papers hal-02131106v1

Temperature estimation of high-electron mobility transistors AlGaN/GaN

O. Latry , Eric Joubert , Tristan Neveu , Niemat Moultif , Mohamed Ndiaye
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩
Conference papers hal-02131183v1

Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures

Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry
2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩
Conference papers hal-01765953v1

Study of different algorithms and models for trapping effect extraction

Alexis Divay , Mohamed Lamine Masmoudi , O. Latry , Cédric Duperrier , Farid Temcamani
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), May 2016, Krakow, France. ⟨10.1109/MIKON.2016.7491990⟩
Conference papers hal-01740879v1

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Alexis Divay , Cédric Duperrier , Farid Temcamani , O. Latry
ESREF 2016, Sep 2016, Saale, Germany
Conference papers hal-01687227v1
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Caractérisation de la diode d'un transistor HEMT en GaN sous illumination UV

Alexis Divay , O. Latry , Cédric Duperrier , Farid Temcamani
TELECOM’2015 & 9èmes JFMMA, May 2015, Meknes, Maroc
Conference papers hal-01230931v1
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An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors

Alexis Divay , Mohamed Lamine Masmoudi , Olivier Latry , Cédric Duperrier , Farid Temcamani
ESREF 2015, Oct 2015, Toulouse, France
Conference papers hal-01230925v1

RF transient pulse signal integrity with ns-duration for atom-probe tomography

Lu Zhao , A. Delamare , Antoine Normand , Fabien Delaroche , O. Latry
2015 IEEE Radio and Antenna Days of the Indian Ocean (RADIO), Sep 2015, Belle Mare, France. pp.1-2, ⟨10.1109/RADIO.2015.7323403⟩
Conference papers hal-02107624v1

Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques

Mbarek Safa , Pascal Dherbécourt , François Fouquet , Olivier Latry
Télécom & JFMMA, 2015, Meknès, Maroc
Conference papers hal-02407378v1
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Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier

Patrick Denis , Pascal Dherbécourt , O. Latry
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Conference papers hal-01065192v1

Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints

Mbarek Safa , Pascal Dherbécourt , O. Latry , Francois Fouquet , Othman Dhouha
CENICS, 2014, Lisbonne, Portugal
Conference papers hal-01700474v1

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization

Jean-Baptiste Fonder , O. Latry , Farid Temcamani , Cédric Duperrier
2014 International Conference on Multimedia Computing and Systems (ICMCS), Apr 2014, Marrakech, France. ⟨10.1109/ICMCS.2014.6911421⟩
Conference papers hal-01740889v1

Physical analysis of power AlGaN/GaN HEMT reliability

Farid Temcamani , Jean Baptiste Fonder , Cédric Duperrier , O. Latry
IEICE Workshop on Circuits, Systems and Information Technology (WCSIT), Jul 2014, Iasi, Romania
Conference papers hal-01740954v1

Fiabilité d'amplificateurs de puissance à base de GaN: analyse de la défaillance

O. Latry , Jean Baptiste Fonder , Laurence Chevalier , Genevois G. , Cédric Duperrier
Colloque International TELECOM'2013 & 8ème JFMMA, Mar 2013, Marrakech, Maroc
Conference papers hal-01740909v1

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Jean Baptiste Fonder , Laurence Chevalier , Cécile Genevois , Olivier Latry , Cédric Duperrier
23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Oct 2012, Cagliari, Italy. pp.2205
Conference papers hal-00735910v1

A Reliability-based AlGaN/GaN HEMT model considering high drain bias voltage ageing.

Jean Baptiste Fonder , Cédric Duperrier , Olivier Latry , Michel Stanislawiak , Philippe Eudeline
EUROPEAN MICROWAVE WEEK 2012, Oct 2012, Amsterdam, Netherlands. In press
Conference papers hal-00735915v1
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Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt
17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2
Conference papers hal-00671523v1

Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt
13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38
Conference papers hal-00735895v1

Reliability and Qualification Tests for High-Power MOSFET Transistors

Niemat Moultif , Mohamed Lamine Masmoudi , Eric Joubert , O. Latry
Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩
Book sections hal-01927246v1

Reliability Study of High-Power Mechatronic Components by Spectral Photoemission Microscopy

Niemat Moultif , Alexis Divay , Eric Joubert , O. Latry
Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.241--271, 2017, ⟨10.1016/b978-1-78548-261-8.50008-5⟩
Book sections hal-01927247v1

Chap 2. Aging Power Transistors in Operational Conditions

Pascal Dherbécourt , O. Latry , K. Dehais-Mourgues , Jean Baptiste Fonder , Cédric Duperrier
Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩
Book sections hal-01740826v1

Chap.8 High-Efficiency Architecture for Power Amplifiers

Farid Temcamani , Jean Baptiste Fonder , Cédric Duperrier , O. Latry
Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.217-240, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50008-6⟩
Book sections hal-01740811v1

Physical Defects Analysis of Mechatronic Systems

Christian Gautier , Eric Pieraerts , O. Latry
Embedded Mechatronic Systems 2, Elsevier, pp.49-77, 2015, ⟨10.1016/B978-1-78548-014-0.50003-7⟩
Book sections hal-02130929v1

Internal Temperature Measurement of Electronic Components

Eric Joubert , Olivier Latry , Pascal Dherbécourt , Maxime Fontaine , Christian Gautier
Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩
Book sections hal-02173702v1