Olivier Latry

64
Documents

Présentation

I hold an MSc degree in electrical engineering from ESIGELEC Rouen, France from 1991 and a PhD degree in electrical engineering from the University of Rouen, France, from 1995. Since late 2008, I joined the « Groupe de Physique des Matériaux » UMR CNRS at the University of Rouen Normandy. I has carried out research on transistors and my major research interests today include microelectronic reliability on power transistors like Gallium Nitride High Electron Mobility Transistors (HEMT GaN) or Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors, (MOSFET SiC). At University Institute of Technology of Rouen, I give courses on electronics, controlled systems, microwave and radar systems. I'm one of the founder of the Microwave and Radar Training Center of Normandy (MRTC).

Publications

Publications

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Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

Rosine Coq Germanicus , Kimmo Niskanen , Alain Michez , Niemat Moultif , Wadia Jouha et al.

Materials Science Forum, 2022, 1062, pp.544-548. ⟨10.4028/p-973n9u⟩

Article dans une revue hal-03702520v1

A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications

Olivier Latry , Niemat Moultif , Eric Joubert , Mohamed Ndiaye

e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100062. ⟨10.1016/j.prime.2022.100062⟩

Article dans une revue hal-04877849v1

Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress

Niemat Moultif , Olivier Latry , Eric Joubert , Mohamed Ndiaye , Christian Moreau et al.

IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩

Article dans une revue hal-03174499v1
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Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating

Niemat Moultif , Sébastien Duguay , O. Latry , M. Ndiaye , Eric Joubert

Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩

Article dans une revue hal-03469148v1
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Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

Rosine Coq Germanicus , Florent Lallemand , Daniel Chateigner , Wadia Jouha , Niemat Moultif et al.

Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩

Article dans une revue hal-03341563v1

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization

Al Mehdi Bouchour , Ahmed El Oualkadi , O. Latry , Pascal Dherbécourt , Andres Echeverri

Computers and Electrical Engineering, 2020, 84, pp.106622. ⟨10.1016/j.compeleceng.2020.106622⟩

Article dans une revue hal-02614065v1
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Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency

A.M. Bouchour , A. El Oualkadi , Pascal Dherbécourt , O. Latry , A. Echeverri

Microelectronics Reliability, 2019, 100-101, pp.113403. ⟨10.1016/j.microrel.2019.113403⟩

Article dans une revue hal-03174379v1

Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

Niemat Moultif , Andres Echeverri , Dominique Carisetti , O. Latry , Eric Joubert

IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩

Article dans une revue hal-02614080v1

Evidence of Mg segregation to threading dislocation in normally-off GaN-HEMT

Sébastien Duguay , Andres Echeverri , Celia Castro , Olivier Latry

IEEE Transactions on Nanotechnology, 2019, 18, pp.995-998. ⟨10.1109/TNANO.2019.2942400⟩

Article dans une revue hal-02299201v1
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S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

Niemat Moultif , O. Latry , Mamadou Ndiaye , Tristan Neveu , Eric Joubert et al.

Microelectronics Reliability, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩

Article dans une revue hal-02380186v1

Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

O. Latry , Pascal Dherbécourt , Patrick Denis , Fabien Cuvilly , Moncef Kadi

Engineering Failure Analysis, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩

Article dans une revue istex hal-02131204v1

Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing

Lu Zhao , Antoine Normand , Jonathan Houard , Ivan Blum , Fabien Delaroche et al.

Microscopy and Microanalysis, 2017, 23 (2), pp.221-226. ⟨10.1017/S1431927616012666⟩

Article dans une revue hal-02611781v1

Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures

Niemat Moultif , Alexis Divay , Eric Joubert , O. Latry

Engineering Failure Analysis, 2017, 81, pp.69 - 78. ⟨10.1016/j.engfailanal.2017.07.014⟩

Article dans une revue hal-01766076v1

Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures

Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry

Microelectronics Reliability, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩

Article dans une revue hal-01765955v1

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET

S. Mbarek , Pascal Dherbécourt , O. Latry , F. Fouquet

Microelectronics Reliability, 2017, 76-77, pp.527 - 531. ⟨10.1016/j.microrel.2017.07.002⟩

Article dans une revue hal-01766126v1

Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena

O. Latry , A. Divay , D. Fadil , Pascal Dherbécourt

Journal of Semiconductors, 2017, 38 (1), ⟨10.1088/1674-4926/38/1/014007⟩

Article dans une revue hal-01766037v1

Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests

S. Mbarek , F. Fouquet , Pascal Dherbécourt , Mohamed Lamine Masmoudi , O. Latry

Microelectronics Reliability, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩

Article dans une revue hal-01954256v1
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RF pulse signal integrity analysis for nonlinear ended microstrip line atom-probe tomography

Lu Zhao , A. Delamare , Antoine Normand , Fabien Delaroche , O. Latry et al.

IOP Conference Series: Materials Science and Engineering, 2016, 120, pp.012006. ⟨10.1088/1757-899X/120/1/012006⟩

Article dans une revue hal-01954239v1

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

A. Divay , Cédric Duperrier , Farid Temcamani , O. Latry

Microelectronics Reliability, 2016, 64, pp.585 - 588. ⟨10.1016/j.microrel.2016.07.123⟩

Article dans une revue hal-01690679v1

Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy

Niemat Moultif , Eric Joubert , O. Latry

Advanced Electromagnetics, 2016, 5 (3), pp.20. ⟨10.7716/aem.v5i3.380⟩

Article dans une revue hal-02177964v1

Ageing of GaN HEMT devices: which degradation indicators?

A. Divay , O. Latry , Cédric Duperrier , Farid Temcamani

Journal of Semiconductors, 2016, 37 (1), ⟨10.1088/1674-4926/37/1/014001⟩

Article dans une revue hal-01740848v1
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Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Farid Temcamani , Jean Baptiste Fonder , O. Latry , Cédric Duperrier

IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (3), pp.756-766. ⟨10.1109/TMTT.2016.2519342⟩

Article dans une revue hal-01299413v1

2 - Aging Power Transistors in Operational Conditions

Jean Baptiste Fonder , Cédric Duperrier , Farid Temcamani , O. Latry , H. Maanane

Embedded Mechatronic Systems, 2015, 2, pp.23-48. ⟨10.1016/b978-1-78548-014-0.50002-5 ⟩

Article dans une revue hal-02979964v1
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An athermal measurement technique for long traps characterization in GaN HEMT transistors.

A Divay , Mohamed Lamine Masmoudi , Olivier Latry , C Duperrier , Farid Temcamani

Microelectronics Reliability, 2015, 55, pp.1703-1707. ⟨10.1016/j.microrel.2015.06.074⟩

Article dans une revue hal-01341768v1

Temperature and Dilatation Estimation for Modern Semiconductor Devices

Eric Joubert , O. Latry , Jean-Philippe Roux

Sensors & Transducers., 2015, 184 (1), pp.130-135

Article dans une revue hal-02178029v1

Performance drifts of N-MOSFETs under pulsed RF life test

M.A. Belaïd , M. Gares , K. Daoud , O. Latry

Microelectronics Reliability, 2014, 54 (9-10), pp.1851-1855. ⟨10.1016/j.microrel.2014.07.131⟩

Article dans une revue istex hal-02267372v1

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests

M.A. Belaïd , A.M. Nahhas , M. Gares , K. Daoud , O. Latry

Microelectronics Journal, 2014, 45 (12), pp.1800-1805. ⟨10.1016/j.mejo.2014.06.002⟩

Article dans une revue istex hal-02267365v1

Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis

P. Denis , Pascal Dherbécourt , O. Latry , C. Genevois , Fabien Cuvilly et al.

Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩

Article dans une revue hal-02156382v1

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.

Jean Baptiste Fonder , Laurence Chevalier , Cécile Genevois , O. Latry , Cédric Duperrier et al.

Microelectronics Reliability, 2012, pp.2205. ⟨10.1016/j.microrel.2012.06.053⟩

Article dans une revue istex hal-00735905v1

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band Pulsed-RF Operating Life.

Jean Baptiste Fonder , O. Latry , Cédric Duperrier , Michel Stanislawiak , Hichame Maanane et al.

Microelectronics Reliability, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩

Article dans une revue istex hal-00735899v1

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application

L. Lacheze , O. Latry , Pascal Dherbécourt , K. Mourgues , V. Purohit et al.

Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩

Article dans une revue istex hal-02267392v1

Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network

F. Khecib , O. Latry , Pascal Dherbécourt , M. Kétata

Optics Communications, 2011, 284 (21), pp.5125-5129. ⟨10.1016/j.optcom.2011.06.064⟩

Article dans une revue istex hal-02267382v1

A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications

O. Latry , Pascal Dherbécourt , K. Mourgues , H. Maanane , P. Sipma et al.

Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩

Article dans une revue istex hal-02267399v1

Comparison of different feedback signals used in one stage PMD compensators for different modulation formats

Guillaume Ducournau , O. Latry , E. Joubert , M. Ketata

IEEE Transactions on Communications, 2008, 56, pp.1722-1728. ⟨10.1109/TCOMM.2008.060476⟩

Article dans une revue hal-00356948v1
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Early-life drift mechanism investigation of 150nm GaN-on-SiC HEMT RF under accelerated DC test

El Mehdi Meknassi , Niemat Moultif , Sébastien Duguay , Benoit Lambert , Gabriel Bertao et al.

ESREF 2025 - 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France

Communication dans un congrès hal-05323093v2
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SiC MOSFET micro-explosion due to a single event burnout: analysis at the device and die levels

Rosine Coq Germanicus , Tanguy Phulpin , Thomas Rogaume , Kimmo Niskanen , Sandrine Froissart et al.

ISTFA 2023 - the 49th International Symposium for Testing and Failure Analysis Conference, Nov 2023, Phoenix, United States. pp.483-490, ⟨10.31399/asm.cp.istfa2023p0483⟩

Communication dans un congrès hal-04285320v1
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Parametric nano-electrical analysis for SiC junctions of a packaged device

Rosine Coq Germanicus , Wadia Jouha , Niemat Moultif , Peter de Wolf , Vishal Shah et al.

WiPDA Europe 2022 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, Sep 2022, Coventry, United Kingdom. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩

Communication dans un congrès hal-04124443v1

Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

Al Mehdi Bouchour , Pascal Dherbécourt , Ahmed El Oualkadi , Olivier Latry

2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩

Communication dans un congrès hal-03354896v1

Temperature estimation of high-electron mobility transistors AlGaN/GaN

O. Latry , Eric Joubert , Tristan Neveu , Niemat Moultif , Mohamed Ndiaye

2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩

Communication dans un congrès hal-02131183v1

SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

Niemat Moultif , Eric Joubert , Olivier Latry

2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩

Communication dans un congrès hal-02181679v1

Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm

Al Mehdi Bouchour , Pascal Dherbécourt , Andres Echeverri , Ahmed El Oualkadi , O. Latry

2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6

Communication dans un congrès hal-02131106v1

Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures

Niemat Moultif , Eric Joubert , Mohamed Lamine Masmoudi , O. Latry

2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩

Communication dans un congrès hal-01765953v1

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Alexis Divay , Cédric Duperrier , Farid Temcamani , O. Latry

ESREF 2016, Sep 2016, Saale, Germany

Communication dans un congrès hal-01687227v1

Study of different algorithms and models for trapping effect extraction

Alexis Divay , Mohamed Lamine Masmoudi , O. Latry , Cédric Duperrier , Farid Temcamani et al.

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), May 2016, Krakow, France. ⟨10.1109/MIKON.2016.7491990⟩

Communication dans un congrès hal-01740879v1

RF transient pulse signal integrity with ns-duration for atom-probe tomography

Lu Zhao , A. Delamare , Antoine Normand , Fabien Delaroche , O. Latry et al.

2015 IEEE Radio and Antenna Days of the Indian Ocean (RADIO), Sep 2015, Belle Mare, France. pp.1-2, ⟨10.1109/RADIO.2015.7323403⟩

Communication dans un congrès hal-02107624v1

Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques

Mbarek Safa , Pascal Dherbécourt , François Fouquet , Olivier Latry

Télécom & JFMMA, 2015, Meknès, Maroc

Communication dans un congrès hal-02407378v1
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An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors

Alexis Divay , Mohamed Lamine Masmoudi , Olivier Latry , Cédric Duperrier , Farid Temcamani

ESREF 2015, Oct 2015, Toulouse, France

Communication dans un congrès hal-01230925v1
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Caractérisation de la diode d'un transistor HEMT en GaN sous illumination UV

Alexis Divay , O. Latry , Cédric Duperrier , Farid Temcamani

TELECOM’2015 & 9èmes JFMMA, May 2015, Meknes, Maroc

Communication dans un congrès hal-01230931v1

Physical analysis of power AlGaN/GaN HEMT reliability

Farid Temcamani , Jean Baptiste Fonder , Cédric Duperrier , O. Latry

IEICE Workshop on Circuits, Systems and Information Technology (WCSIT), Jul 2014, Iasi, Romania

Communication dans un congrès hal-01740954v1
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Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier

Patrick Denis , Pascal Dherbécourt , O. Latry

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065192v1

Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints

Mbarek Safa , Pascal Dherbécourt , O. Latry , Francois Fouquet , Othman Dhouha et al.

CENICS, 2014, Lisbonne, Portugal

Communication dans un congrès hal-01700474v1

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization

Jean-Baptiste Fonder , O. Latry , Farid Temcamani , Cédric Duperrier

2014 International Conference on Multimedia Computing and Systems (ICMCS), Apr 2014, Marrakech, France. ⟨10.1109/ICMCS.2014.6911421⟩

Communication dans un congrès hal-01740889v1

Fiabilité d'amplificateurs de puissance à base de GaN: analyse de la défaillance

O. Latry , Jean Baptiste Fonder , Laurence Chevalier , Genevois G. , Cédric Duperrier et al.

Colloque International TELECOM'2013 & 8ème JFMMA, Mar 2013, Marrakech, Maroc

Communication dans un congrès hal-01740909v1

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Jean Baptiste Fonder , Laurence Chevalier , Cécile Genevois , Olivier Latry , Cédric Duperrier et al.

23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Oct 2012, Cagliari, Italy. pp.2205

Communication dans un congrès hal-00735910v1

A Reliability-based AlGaN/GaN HEMT model considering high drain bias voltage ageing.

Jean Baptiste Fonder , Cédric Duperrier , Olivier Latry , Michel Stanislawiak , Philippe Eudeline et al.

EUROPEAN MICROWAVE WEEK 2012, Oct 2012, Amsterdam, Netherlands. In press

Communication dans un congrès hal-00735915v1
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Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt et al.

17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2

Communication dans un congrès hal-00671523v1

Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt et al.

13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38

Communication dans un congrès hal-00735895v1

Reliability and Qualification Tests for High-Power MOSFET Transistors

Niemat Moultif , Mohamed Lamine Masmoudi , Eric Joubert , O. Latry

Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩

Chapitre d'ouvrage hal-01927246v1

Reliability Study of High-Power Mechatronic Components by Spectral Photoemission Microscopy

Niemat Moultif , Alexis Divay , Eric Joubert , O. Latry

Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.241--271, 2017, ⟨10.1016/b978-1-78548-261-8.50008-5⟩

Chapitre d'ouvrage hal-01927247v1

Chap.8 High-Efficiency Architecture for Power Amplifiers

Farid Temcamani , Jean Baptiste Fonder , Cédric Duperrier , O. Latry

Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.217-240, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50008-6⟩

Chapitre d'ouvrage hal-01740811v1

Physical Defects Analysis of Mechatronic Systems

Christian Gautier , Eric Pieraerts , O. Latry

Embedded Mechatronic Systems 2, Elsevier, pp.49-77, 2015, ⟨10.1016/B978-1-78548-014-0.50003-7⟩

Chapitre d'ouvrage hal-02130929v1

Internal Temperature Measurement of Electronic Components

Eric Joubert , Olivier Latry , Pascal Dherbécourt , Maxime Fontaine , Christian Gautier et al.

Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩

Chapitre d'ouvrage hal-02173702v1

Chap 2. Aging Power Transistors in Operational Conditions

Pascal Dherbécourt , O. Latry , K. Dehais-Mourgues , Jean Baptiste Fonder , Cédric Duperrier et al.

Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩

Chapitre d'ouvrage hal-01740826v1