pascal dherbecourt

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47

Publications

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GaN HEMT power amplifier design for 2.45 GHz wireless applications

Paula Akossiwa Atchike , Jamal Zbitou , Ahmed El Oualkadi , Pascal Dherbécourt

SAIEE Africa Research Journal, 2023, 114 (4), pp.106-113. ⟨10.23919/SAIEE.2023.10319379⟩

Article dans une revue hal-04294272v1

A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications

Chawki Douzi , Moncef Kadi , Moncef Kadi , Pascal Dherbécourt , Mohamed Akram Besserour et al.

Microelectronics Reliability, 2022, 138, pp.114777. ⟨10.1016/j.microrel.2022.114777⟩

Article dans une revue hal-03882052v1

PHM method for detecting degradation of GaN HEMT ON resistance, application to power converter

H. Boulzazen , Chawki Douzi , Eric Joubert , Pascal Dherbécourt , Moncef Kadi et al.

e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100060. ⟨10.1016/j.prime.2022.100060⟩

Article dans une revue hal-03872112v1

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization

Al Mehdi Bouchour , Ahmed El Oualkadi , O. Latry , Pascal Dherbécourt , Andres Echeverri

Computers and Electrical Engineering, 2020, 84, pp.106622. ⟨10.1016/j.compeleceng.2020.106622⟩

Article dans une revue hal-02614065v1

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

Wadia Jouha , Mohamed Lamine Masmoudi , Ahmed El Oualkadi , Eric Joubert , Pascal Dherbécourt

IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩

Article dans une revue hal-03174373v1

In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Mohamed Lamine Masmoudi , Joubert Eric

IET Circuits, Devices & Systems, 2020, 14 (2), pp.222-228. ⟨10.1049/iet-cds.2018.5509⟩

Article dans une revue hal-04355283v1
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Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency

A.M. Bouchour , A. El Oualkadi , Pascal Dherbécourt , O. Latry , A. Echeverri

Microelectronics Reliability, 2019, 100-101, pp.113403. ⟨10.1016/j.microrel.2019.113403⟩

Article dans une revue hal-03174379v1

An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET

Wadia Jouha , Pascal Dherbécourt , Ahmed El Oualkadi , Eric Joubert , Mohamed Lamine Masmoudi

International Journal of Information Science & Technology, 2019, ⟨10.57675/IMIST.PRSM/ijist-v3i1.44⟩

Article dans une revue hal-02295925v1

Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests

Jian Zhi Fu , François Fouquet , Moncef Kadi , Pascal Dherbécourt , Fabien Cuvilly

International Journal of Information Science & Technology, 2019

Article dans une revue hal-02295904v1

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi

IEEE Transactions on Power Electronics, 2018, 33 (11), pp.9130-9133. ⟨10.1109/TPEL.2018.2822939⟩

Article dans une revue hal-02177905v1

Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

O. Latry , Pascal Dherbécourt , Patrick Denis , Fabien Cuvilly , Moncef Kadi

Engineering Failure Analysis, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩

Article dans une revue istex hal-02131204v1

Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests

J.Z. Fu , F. Fouquet , M. Kadi , Pascal Dherbécourt

Microelectronics Reliability, 2018, 88-90, pp.652-655. ⟨10.1016/j.microrel.2018.06.034⟩

Article dans une revue hal-02181673v1

Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena

O. Latry , A. Divay , D. Fadil , Pascal Dherbécourt

Journal of Semiconductors, 2017, 38 (1), ⟨10.1088/1674-4926/38/1/014007⟩

Article dans une revue hal-01766037v1

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET

S. Mbarek , Pascal Dherbécourt , O. Latry , F. Fouquet

Microelectronics Reliability, 2017, 76-77, pp.527 - 531. ⟨10.1016/j.microrel.2017.07.002⟩

Article dans une revue hal-01766126v1
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Reliability and failure analysis of UHF RFID passive tags under thermal storage

Sanae Taoufik , Pascal Dherbécourt , Ahmed Eloualkadi , Farid Temcamani

IEEE Transactions on Device and Materials Reliability, 2017, 17 (3), pp.531 - 538. ⟨10.1109/TDMR.2017.2733519⟩

Article dans une revue hal-01619293v1

Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests

S. Mbarek , F. Fouquet , Pascal Dherbécourt , Mohamed Lamine Masmoudi , O. Latry

Microelectronics Reliability, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩

Article dans une revue hal-01954256v1
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Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags

Sanae Taoufik , Farid Temcamani , Ahmed Eloualkadi , Bruno Delacressonniere , Pascal Dherbécourt

Lecture Notes in Electrical Engineering, Springer, 2016, 1, pp.35-43. ⟨10.1007/978-3-319-30301-7_5⟩

Article dans une revue hal-01341760v1

Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis

P. Denis , Pascal Dherbécourt , O. Latry , C. Genevois , Fabien Cuvilly et al.

Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩

Article dans une revue hal-02156382v1

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application

L. Lacheze , O. Latry , Pascal Dherbécourt , K. Mourgues , V. Purohit et al.

Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩

Article dans une revue istex hal-02267392v1

Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network

F. Khecib , O. Latry , Pascal Dherbécourt , M. Kétata

Optics Communications, 2011, 284 (21), pp.5125-5129. ⟨10.1016/j.optcom.2011.06.064⟩

Article dans une revue istex hal-02267382v1

A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications

O. Latry , Pascal Dherbécourt , K. Mourgues , H. Maanane , P. Sipma et al.

Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩

Article dans une revue istex hal-02267399v1

Design of a High-Power Amplifier Using Wilkinson Power Divider/Combiner for S-band Applications

Paula Akossiwa Atchike , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert

2025 33rd Mediterranean Conference on Control and Automation (MED), Jun 2025, Tangier, France. pp.532-535, ⟨10.1109/MED64031.2025.11073528⟩

Communication dans un congrès hal-05186030v1

Design of An S-Band Power Amplifier Using Loadpull

Paula Akossiwa Atchike , Jamal Zbitou , Pascal Dherbécourt , Ahmed El Oualkadi

2024 International Conference on Computing, Internet of Things and Microwave Systems (ICCIMS), Jul 2024, Gatineau, Canada. pp.1-5, ⟨10.1109/ICCIMS61672.2024.10690567⟩

Communication dans un congrès hal-04718189v1

Design of Dedicated Radar Meteorology Power Amplifier at 3 GHz

Paula Akossiwa Atchike , Taoufik Sanae , Pascal Dherbécourt , Eric Joubert , Ahmed El Oualkadi

2024 4th International Conference on Innovative Research in Applied Science, Engineering and Technology (IRASET), May 2024, FEZ, France. pp.1-5, ⟨10.1109/IRASET60544.2024.10548928⟩

Communication dans un congrès hal-04612396v1

Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

Al Mehdi Bouchour , Pascal Dherbécourt , Ahmed El Oualkadi , Olivier Latry

2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩

Communication dans un congrès hal-03354896v1

Temperature Effects of GaN HEMTs on the Design of Power Converters

Al Mehdi Bouchour , Pascal Dherbécourt , Olivier Latry , Ahmed El Oualkadi

Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco, Apr 2019, Kenitra, France. ⟨10.4108/eai.24-4-2019.2284227⟩

Communication dans un congrès hal-04879301v1

New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration

Pascal Dherbécourt , Ahmed El Oualkadi , Eric Joubert , Al Mehdi Bouchour , Wadia Jouha et al.

Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco, Apr 2019, Kenitra, France. ⟨10.4108/eai.24-4-2019.2284211⟩

Communication dans un congrès hal-04879309v1

Experimental study of 600V GaN transistor under the short-circuit aging tests

J-Z. Fu , F. Fouquet , M. Kadi , Pascal Dherbécourt

2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.249-253, ⟨10.1109/MELCON.2018.8379102⟩

Communication dans un congrès hal-02181678v1

An Extraction Method of SiC Power MOSFET Threshold Voltage

Ahmed Eloualkaki , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi , Wadia Jouha

3rd International Conference on Electrical and Information Technologies, Nov 2017, Rabat, Morocco. ⟨10.1007/978-3-030-05276-8_2⟩

Communication dans un congrès hal-02295944v1

Aging of GaN GIT under repetitive short-circuit tests

J-Z. Fu , F. Fouquet , Moncef Kadi , Pascal Dherbécourt

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), May 2018, Xi'an, China. pp.189-193, ⟨10.1109/WiPDAAsia.2018.8734539⟩

Communication dans un congrès hal-02306848v1

Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm

Al Mehdi Bouchour , Pascal Dherbécourt , Andres Echeverri , Ahmed El Oualkadi , O. Latry

2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6

Communication dans un congrès hal-02131106v1

A new extraction method of SiC power MOSFET threshold voltage using a physical approach

Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi

2017 International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, France. pp.1-6, ⟨10.1109/EITech.2017.8255289⟩

Communication dans un congrès hal-02177925v1

Behavoir study of a 600v gan transistor under short-circuit experimental test

Jian Zhi Fu , Francois Fouquet , Moncef Kadi , Pascal Dherbécourt

TELECOM 2017 et 10ème JFMMA, May 2017, Rabat, Morocco

Communication dans un congrès hal-02310344v1

Static behavior analysis of silicon carbide power MOSFET for temperature variations

Wadia Jouha , Pascal Dherbécourt , Eric Joubert , Ahmed El Oualkadi

2016 International Conference on Electrical and Information Technologies (ICEIT), May 2016, Tangiers, Morocco. pp.276-280, ⟨10.1109/EITech.2016.7519605⟩

Communication dans un congrès hal-02173722v1
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Analyse par électroluminescence des dégradations de transistors SiC-MOSFET

Pascal Dherbécourt

Symposium de Genie Electrique, Jun 2016, Grenoble, France

Communication dans un congrès hal-01361661v1

Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques

Mbarek Safa , Pascal Dherbécourt , François Fouquet , Olivier Latry

Télécom & JFMMA, 2015, Meknès, Maroc

Communication dans un congrès hal-02407378v1
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Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags

Sanae Taoufik , Ahmed El Oualkadi , Farid Temcamani , B Delacressonniere , Pascal Dherbécourt

MEDICT, 2015, SAIDIA, France

Communication dans un congrès hal-01171801v1
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Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier

Patrick Denis , Pascal Dherbécourt , O. Latry

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065192v1

Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints

Mbarek Safa , Pascal Dherbécourt , O. Latry , Francois Fouquet , Othman Dhouha et al.

CENICS, 2014, Lisbonne, Portugal

Communication dans un congrès hal-01700474v1
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Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt et al.

17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2

Communication dans un congrès hal-00671523v1

Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbécourt et al.

13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38

Communication dans un congrès hal-00735895v1

Internal Temperature Measurement of Electronic Components

Eric Joubert , Olivier Latry , Pascal Dherbécourt , Maxime Fontaine , Christian Gautier et al.

Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩

Chapitre d'ouvrage hal-02173702v1

Chap 2. Aging Power Transistors in Operational Conditions

Pascal Dherbécourt , O. Latry , K. Dehais-Mourgues , Jean Baptiste Fonder , Cédric Duperrier et al.

Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩

Chapitre d'ouvrage hal-01740826v1