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pascal dherbecourt

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**Pascal Dherbécourt**, **Maître de conférences Hors Classe** **Section CNU 63 (*Génie électrique, électronique, photonique et systèmes)*** - **Adresse professionnelle :** - **Groupe de Physique des Matériaux - UMR CNRS 6634** - Avenue de l’Université BP 76801 Saint Etienne du Rouvray Cedex - Tel : 02 32 95 51 57 - Email : <pascal.dherbecourt@univ-rouen.fr> **Université de Rouen - IUT – Département Génie Electrique et Informatique Industrielle** - 76821 Mont Saint Aignan Cedex Tel : 02 35 14 63 54 **Septembre 2014 : Habilitation à Diriger des Recherches** Soutenue le 4 septembre 2014 au GPM Université de Rouen Normandie : **« Performances et fiabilité des systèmes: Des télécommunications optiques aux composants électroniques de puissance »** **Juin 2002 : Doctorat en physique** à l’université de Rouen. Thèse soutenue le 21 juin 2002, portant sur **« *l’étude et réalisation d’un générateur d’onde optique modulée en amplitude à très haute fréquence »*.** Application à la caractérisation spectrale des sources lasers et des photorécepteurs rapides type PIN pour les systèmes de télécommunications sur fibres optiques à très haut débit. **Distinction honorifique :** Chevalier dans l’Ordre des Palmes Académiques promotion juillet 2009.

Publications

A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications

Chawki Douzi , Moncef Kadi , Pascal Dherbécourt , Mohamed Akram Besserour , Eric Joubert et al.
Microelectronics Reliability, 2022, 138, pp.114777. ⟨10.1016/j.microrel.2022.114777⟩
Journal articles hal-03882052v1

PHM method for detecting degradation of GaN HEMT ON resistance, application to power converter

H. Boulzazen , Chawki Douzi , Eric Joubert , Pascal Dherbécourt , Moncef Kadi et al.
e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100060. ⟨10.1016/j.prime.2022.100060⟩
Journal articles hal-03872112v1

Estimation of losses of GaN HEMT in power switching applications based on experimental characterization

Al Mehdi Bouchour , Ahmed El Oualkadi , O. Latry , Pascal Dherbécourt , Andres Echeverri et al.
Computers and Electrical Engineering, 2020, 84, pp.106622. ⟨10.1016/j.compeleceng.2020.106622⟩
Journal articles hal-02614065v1

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

Wadia Jouha , Mohamed Lamine Masmoudi , Ahmed El Oualkadi , Eric Joubert , Pascal Dherbécourt et al.
IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩
Journal articles hal-03174373v1
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Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency

A.M. Bouchour , A. El Oualkadi , Pascal Dherbécourt , O. Latry , A. Echeverri et al.
Microelectronics Reliability, 2019, 100-101, pp.113403. ⟨10.1016/j.microrel.2019.113403⟩
Journal articles hal-03174379v1

An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET

Wadia Jouha , Pascal Dherbécourt , Ahmed El Oualkadi , Eric Joubert , M Masmoudi et al.
International Journal of Information Science & Technology, 2019, ⟨10.57675/IMIST.PRSM/ijist-v3i1.44⟩
Journal articles hal-02295925v1

Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests

Jian Zhi Fu , François Fouquet , Moncef Kadi , Pascal Dherbécourt , Fabien Cuvilly et al.
International Journal of Information Science & Technology, 2019
Journal articles hal-02295904v1

Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

O. Latry , Pascal Dherbécourt , Patrick Denis , Fabien Cuvilly , Moncef Kadi et al.
Engineering Failure Analysis, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩
Journal articles hal-02131204v1

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi et al.
IEEE Transactions on Power Electronics, 2018, 33 (11), pp.9130-9133. ⟨10.1109/TPEL.2018.2822939⟩
Journal articles hal-02177905v1

Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests

J.Z. Fu , F. Fouquet , M. Kadi , Pascal Dherbécourt
Microelectronics Reliability, 2018, 88-90, pp.652-655. ⟨10.1016/j.microrel.2018.06.034⟩
Journal articles hal-02181673v1

Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET

S. Mbarek , Pascal Dherbécourt , O. Latry , F. Fouquet
Microelectronics Reliability, 2017, 76-77, pp.527 - 531. ⟨10.1016/j.microrel.2017.07.002⟩
Journal articles hal-01766126v1

Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena

O. Latry , A. Divay , D. Fadil , Pascal Dherbécourt
Journal of Semiconductors, 2017, 38 (1), ⟨10.1088/1674-4926/38/1/014007⟩
Journal articles hal-01766037v1
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Reliability and failure analysis of UHF RFID passive tags under thermal storage

Sanae Taoufik , Pascal Dherbécourt , Ahmed Eloualkadi , Farid Temcamani
IEEE Transactions on Device and Materials Reliability, 2017, 17 (3), pp.531 - 538. ⟨10.1109/TDMR.2017.2733519⟩
Journal articles hal-01619293v1

Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests

S. Mbarek , F. Fouquet , Pascal Dherbécourt , M. Masmoudi , O. Latry et al.
Microelectronics Reliability, 2016, 64, pp.415-418. ⟨10.1016/j.microrel.2016.07.132⟩
Journal articles hal-01954256v1
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Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags

Sanae Taoufik , Farid Temcamani , Ahmed Eloualkadi , Bruno Delacressonniere , Pascal Dherbécourt et al.
Lecture Notes in Electrical Engineering, Springer, 2016, 1, pp.35-43. ⟨10.1007/978-3-319-30301-7_5⟩
Journal articles hal-01341760v1

Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis

P. Denis , Pascal Dherbécourt , O. Latry , C. Genevois , F. Cuvilly et al.
Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩
Journal articles hal-02156382v1

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application

L. Lacheze , O. Latry , Pascal Dherbécourt , K. Mourgues , V. Purohit et al.
Microelectronics Reliability, 2011, 51 (8), pp.1289-1294. ⟨10.1016/j.microrel.2011.03.040⟩
Journal articles hal-02267392v1

Adding channels with PSBT format at 40Gbit/s in an existing 10Gbit/s optical network

F. Khecib , O. Latry , Pascal Dherbécourt , M. Kétata
Optics Communications, 2011, 284 (21), pp.5125-5129. ⟨10.1016/j.optcom.2011.06.064⟩
Journal articles hal-02267382v1

A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications

O. Latry , Pascal Dherbécourt , K. Mourgues , H. Maanane , P. Sipma et al.
Microelectronics Reliability, 2010, 50 (9-11), pp.1574-1576. ⟨10.1016/j.microrel.2010.07.086⟩
Journal articles hal-02267399v1

Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

Al Mehdi Bouchour , Pascal Dherbécourt , Ahmed El Oualkadi , Olivier Latry
2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩
Conference papers hal-03354896v1

Experimental study of 600V GaN transistor under the short-circuit aging tests

J-Z. Fu , F. Fouquet , M. Kadi , Pascal Dherbécourt
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.249-253, ⟨10.1109/MELCON.2018.8379102⟩
Conference papers hal-02181678v1

Modeling of Power GaN HEMT for Switching Circuits Applications Using Levenberg-Marquardt Algorithm

Al Mehdi Bouchour , Pascal Dherbécourt , Andres Echeverri , Ahmed El Oualkadi , O. Latry et al.
2018 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2018, Rabat, Morocco. pp.1-6
Conference papers hal-02131106v1

Aging of GaN GIT under repetitive short-circuit tests

J-Z. Fu , F. Fouquet , Moncef Kadi , Pascal Dherbécourt
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), May 2018, Xi'an, China. pp.189-193, ⟨10.1109/WiPDAAsia.2018.8734539⟩
Conference papers hal-02306848v1

A new extraction method of SiC power MOSFET threshold voltage using a physical approach

Wadia Jouha , Ahmed El Oualkadi , Pascal Dherbécourt , Eric Joubert , Mohamed Lamine Masmoudi et al.
2017 International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, France. pp.1-6, ⟨10.1109/EITech.2017.8255289⟩
Conference papers hal-02177925v1

Behavoir study of a 600v gan transistor under short-circuit experimental test

Jian Zhi Fu , Francois Fouquet , Moncef Kadi , Pascal Dherbécourt
TELECOM 2017 et 10ème JFMMA, May 2017, Rabat, Morocco
Conference papers hal-02310344v1

An Extraction Method of SiC Power MOSFET Threshold Voltage

Ahmed Eloualkaki , Pascal Dherbécourt , Eric Joubert , M. Masmoudi , Wadia Jouha et al.
3rd International Conference on Electrical and Information Technologies, Nov 2017, Rabat, Morocco. ⟨10.1007/978-3-030-05276-8_2⟩
Conference papers hal-02295944v1

Static behavior analysis of silicon carbide power MOSFET for temperature variations

Wadia Jouha , Pascal Dherbécourt , Eric Joubert , Ahmed El Oualkadi
2016 International Conference on Electrical and Information Technologies (ICEIT), May 2016, Tangiers, Morocco. pp.276-280, ⟨10.1109/EITech.2016.7519605⟩
Conference papers hal-02173722v1
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Analyse par électroluminescence des dégradations de transistors SiC-MOSFET

Pascal Dherbécourt
Symposium de Genie Electrique, Jun 2016, Grenoble, France
Conference papers hal-01361661v1

Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques

Mbarek Safa , Pascal Dherbécourt , François Fouquet , Olivier Latry
Télécom & JFMMA, 2015, Meknès, Maroc
Conference papers hal-02407378v1
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Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags

S Taoufik , Ahmed El Oualkadi , Farid Temcamani , B Delacressonniere , Pascal Dherbécourt et al.
MEDICT, 2015, SAIDIA, France
Conference papers hal-01171801v1
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Vieillissement thermique de diodes Schottky en carbure de silicium: validation de l'analyse de défaillance par le cas singulier

Patrick Denis , Pascal Dherbécourt , O. Latry
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Conference papers hal-01065192v1

Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints

Mbarek Safa , Pascal Dherbécourt , O. Latry , Francois Fouquet , Othman Dhouha et al.
CENICS, 2014, Lisbonne, Portugal
Conference papers hal-01700474v1
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Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN, en bande S.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbecourt et al.
17èmes Journées Nationales Microondes, May 2011, Brest, France. pp.4C-2
Conference papers hal-00671523v1

Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN.

Jean Baptiste Fonder , Farid Temcamani , Cédric Duperrier , Olivier Latry , Pascal Dherbecourt et al.
13èmes Journées Nano Micro et Optoélectronique, Les Issambres (France), Sep 2010, Les Issambres, France. pp.Poster 38
Conference papers hal-00735895v1

Chap 2. Aging Power Transistors in Operational Conditions

Pascal Dherbécourt , O. Latry , K. Dehais-Mourgues , Jean Baptiste Fonder , Cédric Duperrier et al.
Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization, 2, ISTE Press - Elsevier, pp.23-48, 2015, 978-1785480140. ⟨10.1016/B978-1-78548-014-0.50002-5⟩
Book sections hal-01740826v1

Internal Temperature Measurement of Electronic Components

Eric Joubert , Olivier Latry , Pascal Dherbécourt , Maxime Fontaine , Christian Gautier et al.
Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩
Book sections hal-02173702v1