Pedro Rocha

19
Documents

Publications

Publications

A Comparison Study of Substrates Quality for GaN Vertical Devices

Pedro Fernandes Paes Pinto Rocha , Kevin Nadaud , Giuseppe Greco , Taoufik Slimani Tlemcani , Michal Bockowski et al.

International GaN4AP Workshop : GaN for Advanced Power Applications, Feb 2025, Catane, Italy

Communication dans un congrès hal-04988232v1

Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications

Blend Mohamad , Cyrille Le Royer , Florian Rigaud-Minet , Clémentine Piotrowicz , Pedro Fernandes Paes Pinto Rocha et al.

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2023, Seoul, South Korea. ⟨10.1109/EDTM55494.2023.10102971⟩

Communication dans un congrès cea-04528484v1
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L'HAXPES de laboratoire pour les nouvelles technologies en microélectronique

Eugénie Martinez , Tarek Spelta , Pedro Fernandes Paes Pinto Rocha , Jules Courtin , Marc Veillerot et al.

JNSPE 2023 - Les Journées Nationales des Spectroscopies de Photoemission, CEMEF, May 2023, Sophia-Antipolis, France

Communication dans un congrès cea-04196708v1
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Impact of gate morphology on electrical performances of recessed GaN-on Si MOS channel-HEMT for different channel orientations

Clémentine Piotrowicz , Blend Mohamad , Pedro Fernandes Paes Pinto Rocha , N. Malbert , Simon Ruel et al.

ISPSD 2023 - International Symposium on Power Semiconductor Devices and ICs, May 2023, Hong-Kong, Hong Kong SAR China. pp.382-385, ⟨10.1109/ISPSD57135.2023.10147642⟩

Communication dans un congrès cea-04528487v1
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Laboratory HAXPES of GaN structures for power electronic

Eugénie Martinez , Tarek Spelta , Pedro Fernandes Paes Pinto Rocha , Marc Veillerot , Bérangère Hyot et al.

HAXPES 2022 - The 9th International Conference on Hard X-ray Photoelectron Spectroscopy, May 2022, Himeji, Japan

Communication dans un congrès cea-03689191v1
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Caractérisation de structures GaN par HAXPES pour l'électronique de puissance

Tarek Spelta , Eugénie Martinez , Marc Veillerot , Pedro Fernandes Paes Pinto Rocha , Sarah Boubenia et al.

JNSPE 2022 - Journées Nationales des Spectroscopies de PhotoEmission, May 2022, Dijon, France

Communication dans un congrès cea-04325037v1
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Characterization of GaN structures by a combined SIMS and HAXPES approach

Tarek Spelta , Marc Veillerot , Eugénie Martinez , Laura Vauche , Pedro Fernandes Paes Pinto Rocha et al.

EVC 16 - The 16th European Vacuum Congress, Nov 2021, Marseille, France

Communication dans un congrès cea-04503612v1
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Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

Vishwajeet Maurya , Daniel Alquier , Hala El Rammouz , Pedro Fernandes Paes Pinto Rocha , Thomas Kaltsounis et al.

Power Electronic Devices and Components, 2025, 11, pp.100092. ⟨10.1016/j.pedc.2025.100092⟩

Article dans une revue hal-05201973v1
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Effect of Al 2 O 3 thickness and oxidant precursors on the interface composition and contamination in Al 2 O 3 /GaN structures

Tarek Spelta , Eugénie Martinez , Marc Veillerot , Pedro Fernandes Paes Pinto Rocha , Laura Vauche et al.

Surface and Interface Analysis, 2024, 57 (21), pp.215106. ⟨10.1002/sia.7299⟩

Article dans une revue hal-04509863v1

Synthesis of AlOxNy thin films using a two-step PE-ALD process

Mohammed Zeghouane , Pedro Fernandes Paes Pinto Rocha , Sarah Boubenia , Franck Bassani , Gauthier Lefevre et al.

AIP Advances, 2023, 13 (8), ⟨10.1063/5.0154468⟩

Article dans une revue hal-04216905v1
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Post-deposition annealing challenges for ALD Al$_{0.5}$Si$_{0.5}$O$_x$/n-GaN MOS devices

Pedro Fernandes Paes Pinto Rocha , Laura Vauche , Messaoud Bedjaoui , Stephane Cadot , Blend Mohamad et al.

Solid-State Electronics, 2023, 209, pp.108780. ⟨10.1016/j.sse.2023.108780⟩

Article dans une revue cea-04557061v1
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Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Tarek Spelta , Marc Veillerot , Eugénie Martinez , Nicolas Chevalier , Denis Mariolle et al.

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2023, Secondary Ion Mass Spectrometry (SIMS), 41 (3), pp.034003. ⟨10.1116/6.0002573⟩

Article dans une revue hal-04216907v1
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Recent developments and prospects of fully recessed MIS gate structures for GaN on Si power transistors

Pedro Fernandes Paes Pinto Rocha , Laura Vauche , Patricia Pimenta-Barros , Simon Ruel , René Escoffier et al.

Energies, 2023, 16 (7), ⟨10.3390/en16072978⟩

Article dans une revue hal-04215264v1
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Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT

Paes Fernandes Paes Pinto Rocha , L. Vauche , B. Mohamad , W. Vandendaele , E. Martinez et al.

Power Electronic Devices and Components, 2023, pp.100033. ⟨10.1016/j.pedc.2023.100033⟩

Article dans une revue hal-03940756v1
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Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM

Tarek Spelta , Marc Veillerot , Eugénie Martinez , Denis Mariolle , Roselyne Templier et al.

Solid-State Electronics, 2023, 208, pp.108743. ⟨10.1016/j.sse.2023.108743⟩

Article dans une revue hal-04216926v1
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Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Pedro Fernandes Paes Pinto Rocha , Mohammed Zeghouane , Sarah Boubenia , Franck Bassani , Laura Vauche et al.

Advanced Electronic Materials, 2023, 10 (3), ⟨10.1002/aelm.202300528⟩

Article dans une revue hal-04509895v1