Pedro Rocha
19
Documents
Publications
Publications
Deep-Level Transient Spectroscopy evaluation of epilayers grown on bulk GaN substrates for vertical devices15th International Conference on Nitride Semiconductors (ICNS-15), Jul 2025, Malmö, Sweden
Poster de conférence
hal-05234860
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Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.GaN Marathon 2024, Jun 2024, Verona, Italy. 2024
Poster de conférence
cea-04667618
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A Comparison Study of Substrates Quality for GaN Vertical DevicesInternational GaN4AP Workshop : GaN for Advanced Power Applications, Feb 2025, Catane, Italy
Communication dans un congrès
hal-04988232
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Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2023, Seoul, South Korea. ⟨10.1109/EDTM55494.2023.10102971⟩
Communication dans un congrès
cea-04528484
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L'HAXPES de laboratoire pour les nouvelles technologies en microélectroniqueJNSPE 2023 - Les Journées Nationales des Spectroscopies de Photoemission, CEMEF, May 2023, Sophia-Antipolis, France
Communication dans un congrès
cea-04196708
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Impact of gate morphology on electrical performances of recessed GaN-on Si MOS channel-HEMT for different channel orientationsISPSD 2023 - International Symposium on Power Semiconductor Devices and ICs, May 2023, Hong-Kong, Hong Kong SAR China. pp.382-385, ⟨10.1109/ISPSD57135.2023.10147642⟩
Communication dans un congrès
cea-04528487
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Laboratory HAXPES of GaN structures for power electronicHAXPES 2022 - The 9th International Conference on Hard X-ray Photoelectron Spectroscopy, May 2022, Himeji, Japan
Communication dans un congrès
cea-03689191
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Caractérisation de structures GaN par HAXPES pour l'électronique de puissanceJNSPE 2022 - Journées Nationales des Spectroscopies de PhotoEmission, May 2022, Dijon, France
Communication dans un congrès
cea-04325037
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Characterization of GaN structures by a combined SIMS and HAXPES approachEVC 16 - The 16th European Vacuum Congress, Nov 2021, Marseille, France
Communication dans un congrès
cea-04503612
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Optimization of dielectric/GaN interface for MIS gate power devicesElectric power. Université Grenoble Alpes [2020-..], 2023. English. ⟨NNT : 2023GRALT074⟩
Thèse
tel-04496081
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