Philippe Dollfus
Publications
Publications
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Self-Consistent Advection-Diffusion Monte Carlo Simulation of Quenching in Single-Photon Avalanche DiodesInternational Workshop on Computational Nanotechnology, May 2025, Salt Lake City, United States |
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Multi-Band Model Hamiltonian for Tunnel Devices with Van Der Waals Heterojunctions2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186327⟩ |
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Improved Stochastic SPAD Quenching Model Including Build-Up Field Effect2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186367⟩ |
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Phonon Thermal Transport Along the Chain Direction of Crystalline PolyethyleneInternational Workshop on Computational Nanotechnology, May 2025, Salt Lake City, United States |
Monte Carlo simulation of ThermoElectric Properties in NanostructuresWorkshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece |
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Coupling ab-initio Description and Monte Carlo Simulation to Capture the Transport of Hot CarriersWorkshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece |
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Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.301-304, ⟨10.23919/SISPAD57422.2023.10319610⟩ |
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Automatic optimization of doping profile for high performance Single-Photon Avalanche DiodesInternational Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain |
Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench ProbabilityInternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States |
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Full Band Monte Carlo simulation of phonon transfer at interfaces2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩ |
Nanoscale heat transfer via Ab-Initio Monte Carlo simulation20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States |
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Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructuresNanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland |
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High performance WTe<inf>2</inf>-MoS<inf>2</inf>in-plane heterojunction Tunnel Field Effect Transistors48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩ |
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Thermoelectric properties of Quantum Dot-based devicesIEEE NANO 2018, Jul 2018, Cork, Ireland |
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Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approachHigh Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam |
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Enhanced Seebeck effect in graphene devices by strain and doping engineeringHigh Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam |
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Full-Band modelling of phonons in polytype Ge and Si20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007 |
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Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.145-148, ⟨10.23919/SISPAD49475.2020.9241648⟩ |
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Bioinspired networks with nanoscale memristive devices that combine the unsupervised and supervised learning approaches2012 IEEE/ACM International Symposium on Nanoscale Architectures NANOARCH '12, Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765528⟩ |
Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩ |
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Learning with memristive devices: How should we model their behavior?2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jun 2011, San Diego, United States. ⟨10.1109/NANOARCH.2011.5941497⟩ |
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Plasmonic noise in Si and InGaAs semiconductor nanolayers16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), L. Varani, 2009, Montpellier, France. pp.012091, ⟨10.1088/1742-6596/193/1/012091⟩ |
Field Dependence of Electron Velocity in High-Purity Germanium at Cryogenic TemperaturesTHE THIRTEENTH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS--LTD13, Jul 2009, Stanford, United States. pp.639-642, ⟨10.1063/1.3292422⟩ |
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Analyse de la mobilité dans les transistors nanométriquesJournées Nationales du Réseau Doctorale en Microélectronique, 2006, Rennes, France |
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Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩ |
Étude de la mobilité effective dans les DG MOSFET quasi-balistiquesxxxx, 2006, Grenoble, France. pp.XX |
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Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩ |
Thermal Conductivity of Single Polymer Chains from First-principles Including Quantum and Anharmonic EffectsJOURNÉES PLÉNIIÈRES DU GDR NAME 2024, Nov 2024, Lille, France |