Philippe Dollfus

101
Documents

Publications

Publications

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Self-Consistent Advection-Diffusion Monte Carlo Simulation of Quenching in Single-Photon Avalanche Diodes

Rémi Helleboid , Kenzo Morel-Handa , Isobel Nicholson , Gabriel Mugny , Denis Rideau et al.

International Workshop on Computational Nanotechnology, May 2025, Salt Lake City, United States

Communication dans un congrès hal-05418456v1
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Multi-Band Model Hamiltonian for Tunnel Devices with Van Der Waals Heterojunctions

Owen Loison , Adel M'Foukh , Davide Romanin , Marco Pala , Philippe Dollfus

2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186327⟩

Communication dans un congrès hal-05411859v1
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Improved Stochastic SPAD Quenching Model Including Build-Up Field Effect

Rémi Helleboid , Samuel Dahan , Kenzo Morel-Handa , Gabriel Mugny , Isobel Nicholson et al.

2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186367⟩

Communication dans un congrès hal-05411841v1
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Phonon Thermal Transport Along the Chain Direction of Crystalline Polyethylene

Shouhang Li , Philippe Dollfus , Jérôme Saint-Martin , D. Romanin

International Workshop on Computational Nanotechnology, May 2025, Salt Lake City, United States

Communication dans un congrès hal-05418477v1

Monte Carlo simulation of ThermoElectric Properties in Nanostructures

Mohammad Ghanem , Philippe Dollfus , Jérôme Saint-Martin

Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece

Communication dans un congrès hal-04740322v1

Coupling ab-initio Description and Monte Carlo Simulation to Capture the Transport of Hot Carriers

Mohammad Ghanem , Jelena Sjakste , Raja Sen , Alessandro Pilotto , Philippe Dollfus et al.

Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece

Communication dans un congrès hal-04740315v1

Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination

Alessandro Pilotto , Adel M’foukh , Philippe Dollfus , Jérôme Saint-Martin , Marco Pala

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.301-304, ⟨10.23919/SISPAD57422.2023.10319610⟩

Communication dans un congrès hal-04333397v1
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Automatic optimization of doping profile for high performance Single-Photon Avalanche Diodes

Helleboid Rémi , Jérôme Saint-Martin , Marco Pala , Philippe Dollfus , Rideau Denis et al.

International Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain

Communication dans un congrès hal-04740345v1

Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability

Denis Rideau , Y. Oussaiti , J. Grebot , R. Helleboid , A. Lopez et al.

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States

Communication dans un congrès hal-03374008v1
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Full Band Monte Carlo simulation of phonon transfer at interfaces

N.D. Le , B. Davier , P. Dollfus , Marco G. Pala , A. Bournel et al.

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩

Communication dans un congrès hal-03029928v1

Nanoscale heat transfer via Ab-Initio Monte Carlo simulation

Brice Davier , Jérôme Larroque , Philippe Dollfus , Laurent Chaput , Sebastian Volz et al.

20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States

Communication dans un congrès hal-02187168v1

Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructures

B. Davier , J. Larroque , Philippe Dollfus , Laurent Chaput , S. Volz et al.

Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland

Communication dans un congrès hal-01951979v1

High performance WTe<inf>2</inf>-MoS<inf>2</inf>in-plane heterojunction Tunnel Field Effect Transistors

Marco G. Pala , Jean Choukroun , Shiang Fang , Efthimios Kaxiras , Philippe Dollfus

48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩

Communication dans un congrès hal-02351006v1

Thermoelectric properties of Quantum Dot-based devices

Vincent Talbo , Jérôme Saint-Martin , Philippe Dollfus

IEEE NANO 2018, Jul 2018, Cork, Ireland

Communication dans un congrès hal-01952001v1

Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approach

B. Davier , J. Larroque , P. Dollfus , Jérôme Saint-Martin

High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam

Communication dans un congrès hal-01952013v1

Enhanced Seebeck effect in graphene devices by strain and doping engineering

Mai-Chung Nguyen , Viet-Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , Philippe Dollfus

High Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam

Communication dans un congrès hal-01952016v1

Full-Band modelling of phonons in polytype Ge and Si

J. Larroque , P. Dollfus , Jérôme Saint-Martin

20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007

Communication dans un congrès hal-01951995v1
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Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes

Y. Oussaiti , D. Rideau , J.R. Manouvrier , V. Quenette , H. Wehbe-Alause et al.

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.145-148, ⟨10.23919/SISPAD49475.2020.9241648⟩

Communication dans un congrès hal-03029924v1
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Bioinspired networks with nanoscale memristive devices that combine the unsupervised and supervised learning approaches

D. Querlioz , W. S Zhao , P. Dollfus , J.-O Klein , O. Bichler et al.

2012 IEEE/ACM International Symposium on Nanoscale Architectures NANOARCH '12, Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765528⟩

Communication dans un congrès hal-01839543v1

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi , J. Saint-Martin , A. Bournel , D. Querlioz , P. Dollfus et al.

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩

Communication dans un congrès hal-00799795v1
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Learning with memristive devices: How should we model their behavior?

Damien Querlioz , Philippe Dollfus , Olivier Bichler , Christian Gamrat

2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jun 2011, San Diego, United States. ⟨10.1109/NANOARCH.2011.5941497⟩

Communication dans un congrès hal-01827056v1

Plasmonic noise in Si and InGaAs semiconductor nanolayers

J. Pousset , J-F Millithaler , L. Reggiani , G. Sabatini , C. Palermo et al.

16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), L. Varani, 2009, Montpellier, France. pp.012091, ⟨10.1088/1742-6596/193/1/012091⟩

Communication dans un congrès hal-02443121v1

Field Dependence of Electron Velocity in High-Purity Germanium at Cryogenic Temperatures

V. Aubry Fortuna , A. Broniatowski , P. Dollfus

THE THIRTEENTH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS--LTD13, Jul 2009, Stanford, United States. pp.639-642, ⟨10.1063/1.3292422⟩

Communication dans un congrès in2p3-00695301v1

Analyse de la mobilité dans les transistors nanométriques

J. Pousset , J.-F. Millithaler , C. Palermo , L. Varani , P. Dollfus

Journées Nationales du Réseau Doctorale en Microélectronique, 2006, Rennes, France

Communication dans un congrès hal-02442777v1
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Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach

D. Querlioz , J. Saint-Martin , V.-N. Do , A. Bournel , P. Dollfus

2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩

Communication dans un congrès hal-01827054v1

Étude de la mobilité effective dans les DG MOSFET quasi-balistiques

K. Huet , J. Saint-Martin , A. Bournel , G. Ghibaudo , P. Dollfus et al.

xxxx, 2006, Grenoble, France. pp.XX

Communication dans un congrès hal-00148265v1
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Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs

Jérôme Saint-Martin , Damien Querlioz , Arnaud Bournel , Philippe Dollfus

2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩

Communication dans un congrès hal-01827057v1
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Ultrafast dynamics of hot carriers: Theoretical approaches based on real-time propagation of carrier distributions

Jelena Sjakste , Raja Sen , Nathalie Vast , Jérôme Saint-Martin , Mohammad Ghanem et al.

The Journal of Chemical Physics, 2025, 162 (6), pp.061002. ⟨10.1063/5.0245834⟩

Article dans une revue hal-04946288v1
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Operation and Design of Dirac-Source FETs Using Ab Initio Transport Simulations: Subthreshold Swing and Drive Current

D K Nguyen , A. Pilotto , D. Lizzit , M. Pala , Philippe Dollfus et al.

IEEE Transactions on Electron Devices, 2025, 72 (12), pp.7114 - 7121. ⟨10.1109/ted.2025.3627189⟩

Article dans une revue hal-05407740v1
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Anomalous Temperature-Dependent Thermal Transport in Crystalline Polyethylene Driven by Strong Anharmonicity

Shouhang Li , Philippe Dollfus , Jérôme Saint-Martin , Davide Romanin

Journal of Physical Chemistry Letters, 2025, 16 (39), pp.10210-10215. ⟨10.1021/acs.jpclett.5c02084⟩

Article dans une revue hal-05284461v1
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Thermal conductance of twisted-layer graphite nanofibers

Van-Truong Tran , Thanh-Tra Vu , Jérôme Saint-Martin , Marco Pala , Philippe Dollfus

Carbon, 2023, 204, pp.601-611. ⟨10.1016/j.carbon.2022.12.059⟩

Article dans une revue hal-03995068v1
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Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

Adel Mfoukh , Jérôme Saint-Martin , Philippe Dollfus , Marco Pala

Journal of Computational Electronics, 2023, 22, pp.1257-1263. ⟨10.1007/s10825-023-02080-2⟩

Article dans une revue hal-04161457v1
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Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes

A. Pilotto , J. Saint-Martin , Marco G. Pala , Philippe Dollfus

Solid-State Electronics, 2022, 198, pp.108469. ⟨10.1016/j.sse.2022.108469⟩

Article dans une revue hal-03818605v1
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Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Remi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy et al.

IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩

Article dans une revue hal-03794480v1
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Phonon-assisted transport in van der Waals heterostructure tunnel devices

A. M'Foukh , Jérôme Saint-Martin , Philippe Dollfus , Marco G. Pala

Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩

Article dans une revue hal-03793956v1
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A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Remi Helleboid , Denis Rideau , Isobel Nicholson , Jeremy Grebot , Bastien Mamdy et al.

Journal of Physics D: Applied Physics, 2022, 55, pp.505102. ⟨10.1088/1361-6463/ac9b6a⟩

Article dans une revue hal-03828806v1
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Spectral Simulation of Heat Transfer Across Polytype Interfaces

Nadjib Izitounene , Ngoc Duc Le , Brice Davier , Philippe Dollfus , Lorenzo Paulatto et al.

Crystal Research and Technology, 2022, 57 (9), pp.2200017. ⟨10.1002/crat.202200017⟩

Article dans une revue hal-03864401v1
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Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation

N. Le , Brice Davier , N. Izitounene , Philippe Dollfus , J. Saint-Martin

Journal of Computational Electronics, 2022, 21 (4), pp.744-755. ⟨10.1007/s10825-022-01885-x⟩

Article dans une revue hal-03859201v1
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Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Rémi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy et al.

Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩

Article dans une revue hal-03793952v1
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Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation

Philippe Dollfus , Jérôme Saint-Martin , T. Cazimajou , R. Helleboid , A. Pilotto et al.

Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩

Article dans une revue hal-03793955v1
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Revisiting thermal conductivity and interface conductance at the nanoscale

Brice Davier , Philippe Dollfus , N.D. Le , S. Volz , J. Shiomi et al.

International Journal of Heat and Mass Transfer, 2022, 183 (Part A), pp.122056. ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩

Article dans une revue hal-03859204v1
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Revisiting thermal conductivity and interface conductance at the nanoscale

Brice Davier , Philippe Dollfus , N D Le , Sebastian Volz , J Shiomi et al.

International Journal of Heat and Mass Transfer, 2021, 183, ⟨10.1016/j.ijheatmasstransfer.2021.122056⟩

Article dans une revue hal-03868857v1
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A new mixed hardening methodology applied to a 28 nm FDSOI 32-bits DSP subjected to gamma radiation

Alejandro Ureña-Acuña , Jean-Marc Armani , Mariem Slimani , Ivan Miro-Panades , Philippe Dollfus

Microelectronics Reliability, 2021, 126, pp.114397. ⟨10.1016/j.microrel.2021.114397⟩

Article dans une revue cea-04129158v1
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1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices

Markus Muller , Philippe Dollfus , Michael Schroter

IEEE Transactions on Electron Devices, 2021, 68 (3), pp.1221-1227. ⟨10.1109/TED.2021.3051552⟩

Article dans une revue hal-03332527v1
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Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

D. Logoteta , J. Cao , Marco G. Pala , P. Dollfus , Y. Lee et al.

Physical Review Research, 2020, 2 (4), ⟨10.1103/PhysRevResearch.2.043286⟩

Article dans une revue hal-03032703v1
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Electron transport properties of graphene nanoribbons with Gaussian deformation

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus

Physical Review B, 2020, 102 (7), ⟨10.1103/PhysRevB.102.075425⟩

Article dans une revue hal-02935227v1
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A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

Demetrio Logoteta , Marco Pala , Jean Choukroun , Philippe Dollfus , Giuseppe Iannaccone

IEEE Electron Device Letters, 2019, 40 (9), pp.1550-1553. ⟨10.1109/LED.2019.2928131⟩

Article dans une revue hal-02350929v1
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High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions

Jean Choukroun , Marco Pala , Shiang Fang , Efthimios Kaxiras , Philippe Dollfus

Nanotechnology, 2019, 30 (2), pp.025201. ⟨10.1088/1361-6528/aae7df⟩

Article dans une revue hal-02350992v1
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Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation

Brice Davier , Jérôme Larroque , Philippe Dollfus , Laurent Chaput , Sebastian Volz et al.

Journal of Physics: Condensed Matter, In press, 30 (49), pp.495902. ⟨10.1088/1361-648X/aaea4f⟩

Article dans une revue hal-01906247v1

High thermoelectric and electronic performance in graphene nanoribbons by isotope and vacancy engineering

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz

Materials Today: Proceedings, 2018, 4 (4, Part 1), pp.10393-10400. ⟨10.1016/j.matpr.2017.12.287⟩

Article dans une revue hal-01927617v1
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Phonon transmission at Si/Ge and polytypic Ge interfaces using full-band mismatch based models

Jérôme Larroque , Philippe Dollfus , Jérôme Saint-Martin

Journal of Applied Physics, 2018, 123 (2), ⟨10.1063/1.5007034⟩

Article dans une revue hal-01906686v1
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High thermoelectric performance of graphite nanofibers

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz

Nanoscale, 2018, 10 (8), pp.3784 - 3791. ⟨10.1039/C7NR07817J⟩

Article dans une revue hal-01909447v1
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Ab initio based calculations of the thermal conductivity at the micron scale

Laurent Chaput , Jérôme Larroque , Philippe Dollfus , Jérôme Saint-Martin , David Lacroix

Applied Physics Letters, 2018, 112 (3), pp.033104. ⟨10.1063/1.5010959⟩

Article dans une revue hal-01689364v1

Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors

Vincent Talbo , Jérôme Saint-Martin , Sylvie Galdin-Retailleau , Philippe Dollfus

Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-14009-4⟩

Article dans une revue hal-01906689v1
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Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz

Scientific Reports, 2017, 7 (1), ⟨10.1038/s41598-017-02230-0⟩

Article dans une revue hal-01631292v1

Gold Nanoparticles on Functionalized Silicon Substrate under Coulomb Blockade Regime: An Experimental and Theoretical Investigation

Olivier Pluchery , Louis Caillard , Philippe Dollfus , Yves J Chabal

Journal of Physical Chemistry B, 2017, 122 (2), pp.897 - 903. ⟨10.1021/acs.jpcb.7b06979⟩

Article dans une revue hal-01795635v1
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Third nearest neighbor parameterized tight binding model for graphene nano-ribbons

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus , Sebastian Volz

AIP Advances, 2017, 7 (7), ⟨10.1063/1.4994771⟩

Article dans une revue hal-01631290v1
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Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons

T. Nghiem , Jérôme Saint-Martin , P. Dollfus

Journal of Computational Electronics, 2016, 15 (1), pp.3 - 15. ⟨10.1007/s10825-015-0773-2⟩

Article dans une revue hal-01906694v1

Special Issue on Inelastic Scattering Introduction

Marc Bescond , Philippe Dollfus

Journal of Computational Electronics, 2016, 15 (4, SI), pp.1119-1122. ⟨10.1007/s10825-016-0917-z⟩

Article dans une revue hal-01434945v1

Proposal for a graphene-based all-spin logic gate

Li Su , Weisheng Zhao , Yue Zhang , Damien S Querlioz , Youguang Zhang et al.

Applied Physics Letters, 2015

Article dans une revue hal-02448374v1

High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus

Nanotechnology, 2015, 26 (49), ⟨10.1088/0957-4484/26/49/495202⟩

Article dans une revue hal-01909496v1

Enhanced Seebeck effect in graphene devices by strain and doping engineering

M. Chung Nguyen , V. Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , P. Dollfus

Physica E: Low-dimensional Systems and Nanostructures, 2015, 73, pp.207 - 212. ⟨10.1016/j.physe.2015.05.020⟩

Article dans une revue hal-01909501v1
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Thermoelectric effects in graphene nanostructures

Philippe Dollfus , Viet Hung Nguyen , Jérôme Saint-Martin

Journal of Physics: Condensed Matter, 2015, 27 (13), ⟨10.1088/0953-8984/27/13/133204⟩

Article dans une revue hal-01909508v1

Strain-induced conduction gap in vertical devices made of misoriented graphene layers

V Hung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , P. Dollfus

Nanotechnology, 2015, 26 (11), ⟨10.1088/0957-4484/26/11/115201⟩

Article dans une revue hal-01909504v1

Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus

Semiconductor Science and Technology, 2015, 30 (10), ⟨10.1088/0268-1242/30/10/105002⟩

Article dans une revue hal-01909498v1
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New insights into self-heating in double-gate transistors by solving Boltzmann transport equations

T. Thu Trang Nghiêm , Jérôme Saint-Martin , P. Dollfus

Journal of Applied Physics, 2014, 116 (7), ⟨10.1063/1.4893646⟩

Article dans une revue hal-01906713v1

Enhanced thermoelectric figure of merit in vertical graphene junctions

Viet-Hung Nguyen , Mai Chung Nguyen , Huy-Viet Nguyen , Jérôme Saint-Martin , Philippe Dollfus

Applied Physics Letters, 2014, 105 (13), ⟨10.1063/1.4896915⟩

Article dans une revue hal-01910202v1

The interplay between the Aharonov-Bohm interference and parity selective tunneling in graphene nanoribbon rings

V Hung Nguyen , Y-M Niquet , P. Dollfus

Journal of Physics: Condensed Matter, 2014, 26 (20), pp.205301. ⟨10.1088/0953-8984/26/20/205301⟩

Article dans une revue hal-02137931v1

A Klein-tunneling transistor with ballistic graphene

Quentin Wilmart , Salim Berrada , David Torrin , V Hung Nguyen , Gwendal Fève et al.

2D Materials, 2014, 1 (1), pp.011006. ⟨10.1088/2053-1583/1/1/011006⟩

Article dans une revue hal-01310632v1

On the non-linear effects in graphene devices

Viet Hung Nguyen , Alfonso Alarcón , Salim Berrada , Van Nam Do , Jérôme Saint-Martin et al.

Journal of Physics D: Applied Physics, 2014, 47 (9), pp.094007

Article dans une revue hal-01951903v1
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Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap

Van-Truong Tran , Jérôme Saint-Martin , Philippe Dollfus

Applied Physics Letters, 2014, 105 (7), ⟨10.1063/1.4893697⟩

Article dans une revue hal-01910199v1
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Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Ming Shi , Jérôme Saint-Martin , Arnaud Bournel , Damien Querlioz , Nicolas Wichmann et al.

Solid-State Electronics, 2013, 87, pp.51 - 57. ⟨10.1016/j.sse.2013.05.004⟩

Article dans une revue istex hal-01910206v1
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Immunity to Device Variations in a Spiking Neural Network With Memristive Nanodevices

Damien Querlioz , Olivier Bichler , Philippe Dollfus , Christian Gamrat

IEEE Transactions on Nanotechnology, 2013, 12 (3), pp.288 - 295. ⟨10.1109/TNANO.2013.2250995⟩

Article dans une revue hal-01826840v1

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Alfonso Alarcón , Viet-Hung Nguyen , Salim Berrada , Damien Querlioz , Jérôme Saint-Martin et al.

IEEE Transactions on Electron Devices, 2013, 60 (3), pp.985-991

Article dans une revue hal-01951940v1

Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor

Ming Shi , Jérôme Saint-Martin , Arnaud Bournel , Damien Querlioz , Philippe Dollfus et al.

Journal of Nanoscience and Nanotechnology, 2013, 13 (2), pp.771-775

Article dans une revue hal-01951943v1

Multiscale simulation of carbon nanotube transistors

Cristell Maneux , Sébastien Fregonese , Thomas Zimmer , Sylvie Retailleau , Huu Nha Nguyen et al.

Solid-State Electronics, 2013, 89, pp.26-67. ⟨10.1016/j.sse.2013.06.013⟩

Article dans une revue istex hal-00906950v1
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Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Salim Berrada , Viet Hung Nguyen , Damien Querlioz , Jérôme Saint-Martin , Alfonso Alarcón et al.

Applied Physics Letters, 2013, 103 (18), ⟨10.1063/1.4828496⟩

Article dans une revue hal-01910209v1

Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Viet Hung Nguyen , Jérôme Saint-Martin , Damien Querlioz , Fulvio Mazzamuto , Arnaud Bournel et al.

Journal of Computational Electronics, 2013, 12 (2), pp.85-93

Article dans une revue hal-01951935v1

Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor

Minghua Shi , J. Saint-Martin , A. Bournel , D. Querlioz , P. Dollfus et al.

Journal of Nanoscience and Nanotechnology, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩

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Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Salim Berrada , Viet Hung Nguyen , Damien Querlioz , Jérôme Saint-Martin , Alfonso Alarcón et al.

Applied Physics Letters, 2013, 103 (18), pp.183509

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Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons

F. Mazzamuto , V. Hung Nguyen , Y. Apertet , C. Caër , C. Chassat et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (23), ⟨10.1103/PhysRevB.83.235426⟩

Article dans une revue hal-01909440v1

Electrical excitation of surface phonon-polaritons in III-V heterostructures: a Monte Carlo study

Fulvio Mazzamuto , Jérôme Saint-Martin , Arnaud Bournel , P. Dollfus , Alexandre Archambault et al.

Journal of Physics: Conference Series, 2009, 193 (1), pp.012015. ⟨10.1088/1742-6596/193/1/012015⟩

Article dans une revue hal-00574368v1

Multiscale simulation of carbon nanotube devices

Christophe Adessi , R. Avriller , A. Bournel , Xavier Blase , H. Cazin d'Honincthun et al.

Comptes Rendus. Physique, 2009, 10 (4), pp.305-319. ⟨10.1016/j.crhy.2009.05.004⟩

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Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

D. Querlioz , Y. Apertet , A. Valentin , K. Huet , A. Bournel et al.

Applied Physics Letters, 2008, 92 (4), pp.042108. ⟨10.1063/1.2838354⟩

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Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design

Sebastien Fregonese , Hughes Cazin d'Honincthun , Johnny Goguet , Cristell Maneux , Thomas Zimmer et al.

IEEE Transactions on Electron Devices, 2008, 55 (6), pp.1317-1326

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Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxyde semiconductor field effect transistors

K. Huet , D. Querlioz , W. Chaisantikulwat , J. Saint-Martin , A. Bournel et al.

Journal of Applied Physics, 2008, 104 (4), pp.044504-1-7

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On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

D. Querlioz , Jérôme Saint-Martin , K. Huet , A. Bournel , V. Aubry-Fortuna et al.

IEEE Transactions on Electron Devices, 2007, 54 (9), pp.2232 - 2242. ⟨10.1109/TED.2007.902713⟩

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Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation

A. Bournel , V. Aubry-Fortuna , J. Saint-Martin , P. Dollfus

Solid-State Electronics, 2007, 51 (4), pp.543-550. ⟨10.1016/j.sse.2007.02.010⟩

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Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas

Jérôme Saint-Martin , A. Bournel , F Monsef , C. Chassat , P. Dollfus

Semiconductor Science and Technology, 2006, 21 (4), pp.L29 - L31. ⟨10.1088/0268-1242/21/4/L01⟩

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Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

V. Aubry-Fortuna , P. Dollfus , S. Galdin-Retailleau

Solid-State Electronics, 2005, 48 (8), pp.1320-1329

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On the Ballistic Transport in Nanometer-Scaled DG MOSFETs

Jérôme Saint-Martin , A. Bournel , P. Dollfus

IEEE Transactions on Electron Devices, 2004, 51 (7), pp.1148 - 1155. ⟨10.1109/TED.2004.829904⟩

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Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells

A. Bournel , P. Dollfus , E. Cassan , P. Hesto

Applied Physics Letters, 2000, 77 (15), pp.2346-2348. ⟨10.1063/1.1316771⟩

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Modelling of gate-induced spin precession in a striped channel high electron mobility transistor

A. Bournel , P. Dollfus , S Galdin , F.-X Musalem , P. Hesto

Solid State Communications, 1997, 104 (2), pp.85-89. ⟨10.1016/S0038-1098(97)00278-0⟩

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Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

P. Dollfus , C. Bru , P. Hesto

Journal of Applied Physics, 1993, 73 (2), pp.804-812. ⟨10.1063/1.353341⟩

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Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

P. Dollfus , P. Hesto , S. Galdin , C. Brisset

Journal de Physique III, 1993, 3 (9), pp.1719-1728. ⟨10.1051/jp3:1993232⟩

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High frequency analysis of fast devices using small-signal Monte Carlo simulations : application to a 0.1 μm-gate MODFET

P. Dollfus , S. Galdin , C. Brisset , P. Hesto

Journal de Physique III, 1993, 3 (9), pp.1713-1718. ⟨10.1051/jp3:1993231⟩

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Dimensionnement et performances potentielles des MISFET à hétérojonction

P. Dollfus , M. Mouis , R. Castagné

Revue de Physique Appliquée, 1989, 24 (1), pp.65-69. ⟨10.1051/rphysap:0198900240106500⟩

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Etude Monte-Carlo du transport dans un gaz d'électrons bidimensionnel dégénéré

M. Mouis , P. Dollfus , R. Castagné

Revue de Physique Appliquée, 1989, 24 (2), pp.183-188. ⟨10.1051/rphysap:01989002402018300⟩

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REAL-SPACE TRANSFER IN HETEROJUNCTION FET's : MONTE-CARLO SIMULATION AND ANALYTICAL MODEL

M. Mouis , F. Paviet-Salomon , P. Dollfus , R. Castagné

Journal de Physique Colloques, 1988, 49 (C4), pp.C4-567-C4-570. ⟨10.1051/jphyscol:19884119⟩

Article dans une revue istex jpa-00227854v1
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Etude par simulation Monte Carlo des effets induits dans un TEGFET par le transfert spatial

M. Mouis , P. Dollfus , B. Mougel , J.-F. Pône , R. Castagné

Revue de Physique Appliquée, 1987, 22 (11), pp.1495-1500. ⟨10.1051/rphysap:0198700220110149500⟩

Article dans une revue istex jpa-00245702v1