
Philippe Dollfus
95
Documents
Publications
Publications
Thermal Conductivity of Single Polymer Chains from First-principles Including Quantum and Anharmonic EffectsJOURNÉES PLÉNIIÈRES DU GDR NAME 2024, Nov 2024, Lille, France
Poster de conférence
hal-04790424
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Coupling ab-initio Description and Monte Carlo Simulation to Capture the Transport of Hot CarriersWorkshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece
Communication dans un congrès
hal-04740315
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Monte Carlo simulation of ThermoElectric Properties in NanostructuresWorkshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), May 2024, Glyfada, Greece
Communication dans un congrès
hal-04740322
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Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.301-304, ⟨10.23919/SISPAD57422.2023.10319610⟩
Communication dans un congrès
hal-04333397
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Automatic optimization of doping profile for high performance Single-Photon Avalanche DiodesInternational Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain
Communication dans un congrès
hal-04740345
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Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench ProbabilityInternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States
Communication dans un congrès
hal-03374008
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Full Band Monte Carlo simulation of phonon transfer at interfaces2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩
Communication dans un congrès
hal-03029928
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Nanoscale heat transfer via Ab-Initio Monte Carlo simulation20th International Workshop on Computational Nanotechnology - IWCN 2019 -, May 2019, Evanston, Illinois, USA, United States
Communication dans un congrès
hal-02187168
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Full Band Ab-Initio Monte Carlo simulation of heat transfer in nanostructuresNanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
Communication dans un congrès
hal-01951979
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High performance WTe<inf>2</inf>-MoS<inf>2</inf>in-plane heterojunction Tunnel Field Effect Transistors48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩
Communication dans un congrès
hal-02351006
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Thermoelectric properties of Quantum Dot-based devicesIEEE NANO 2018, Jul 2018, Cork, Ireland
Communication dans un congrès
hal-01952001
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Enhanced Seebeck effect in graphene devices by strain and doping engineeringHigh Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
Communication dans un congrès
hal-01952016
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Heat Transport in Silicon Nanowires within Full-Band Phonon Monte Carlo approachHigh Performance Scientific Computing Conf. (HPSC7), Mar 2018, Hanoi, Vietnam
Communication dans un congrès
hal-01952013
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Full-Band modelling of phonons in polytype Ge and Si20th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON 20), Jul 2017, Buffalo, NY, United States. pp.012007
Communication dans un congrès
hal-01951995
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Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.145-148, ⟨10.23919/SISPAD49475.2020.9241648⟩
Communication dans un congrès
hal-03029924
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Bioinspired networks with nanoscale memristive devices that combine the unsupervised and supervised learning approaches2012 IEEE/ACM International Symposium on Nanoscale Architectures NANOARCH '12, Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765528⟩
Communication dans un congrès
hal-01839543
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Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩
Communication dans un congrès
hal-00799795
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Learning with memristive devices: How should we model their behavior?2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jun 2011, San Diego, United States. ⟨10.1109/NANOARCH.2011.5941497⟩
Communication dans un congrès
hal-01827056
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Plasmonic noise in Si and InGaAs semiconductor nanolayers16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures (EDISON), L. Varani, 2009, Montpellier, France. pp.012091, ⟨10.1088/1742-6596/193/1/012091⟩
Communication dans un congrès
hal-02443121
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Field Dependence of Electron Velocity in High-Purity Germanium at Cryogenic TemperaturesTHE THIRTEENTH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS--LTD13, Jul 2009, Stanford, United States. pp.639-642, ⟨10.1063/1.3292422⟩
Communication dans un congrès
in2p3-00695301
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Étude de la mobilité effective dans les DG MOSFET quasi-balistiquesxxxx, 2006, Grenoble, France. pp.XX
Communication dans un congrès
hal-00148265
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Analyse de la mobilité dans les transistors nanométriquesJournées Nationales du Réseau Doctorale en Microélectronique, 2006, Rennes, France
Communication dans un congrès
hal-02442777
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Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩
Communication dans un congrès
hal-01827054
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Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs2006 International Conference on Simulation of Semiconductor Processes and Devices, Sep 2006, Monterey, United States. ⟨10.1109/SISPAD.2006.282875⟩
Communication dans un congrès
hal-01827057
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