Pierre BROSSELARD
Publications
Publications
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Physical and electrical characterization of wide band gap for power electronic applicationSociété Française de Physique, Jun 2025, Troyes, France |
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Using SiC JBS diode as voltage clamping in SSCB application: performances and limitationsThe 26th European Conference on Power Electronics and Applications, GDR SEEDS France & EPE Association, Mar 2025, Paris, France. ⟨10.34746/epe2025-0169⟩ |
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Raman and photoluminescence characterization of β-Ga2O3 for power electronic applicationWORKSHOP ON GALLIUM OXIDE AND RELATED MATERIALS, Sep 2025, Grenoble, France |
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Optimisation de la technologie Ga2O3 pour la réalisation d'une diode Schottky de puissanceSymposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France |
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction TransistorInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128 |
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodesInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592 |
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Design and Characterization of an Optical 4H-SiC Bipolar Junction TransistorICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
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Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) techniqueICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
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FilSiC – De l'épitaxie au module de puissanceSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France |
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Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiCSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France |
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Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductorsInternational Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic |
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4H-SiC VJFETs with Self-Aligned ContactsECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75 |
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Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumageSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBICSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Etude sur les transistors MOSFETs en Carbure de Silicium - Potentiel d'utilisation dans les Applications Hautes TempératuresSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de siliciumSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspectsCAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩ |
3D TCAD Simulations for More Efficient SiC Power Devices DesignElectro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩ |
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Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diodeInternational Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France |
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Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transportInternational Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan |
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p |
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PASChAC, système automatisé de caractérisation de composants sur waferElectronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France |
Buried selective growth of p-doped SiC by VLS epitaxyCSCRM, Sep 2011, Cleveland, United States |
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Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transportProceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p |
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Protections périphériques des composants 1200 V14ème EPF, Jul 2012, Bordeaux, France. 4 p |
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Protections périphériques de diodes bipolaires 10 kV en SiC-4H14ème Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, Bordeaux, France |
Physical modelling of 4H-SiC PiN diodesCSCRM, Sep 2011, Cleveland, United States. pp.993-996, ⟨10.4028/www.scientific.net/MSF.717-720.993⟩ |
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Diode PiN 6500V en SiC-4H14ème EPF, Jul 2012, Bordeaux, France. 4 p |
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Design and characterization of a novel 3.3 kV 4H-SiC JFETProceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p |
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600 V PiN diodes fabricated using on-axis 4H silicon carbideInternational Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩ |
Integration of temperature and current sensors in 4H-SiC VDMOSCSCRM, Sep 2011, Cleveland, United States |
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High temperature capability of high voltage 4H-SiC JBSHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.124-128, ⟨10.4028/www.scientific.net/MSF.711.124⟩ |
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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature ApplicationsCIMA, Mar 2011, Beyrouth, Lebanon. pp.CD |
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface StateCSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩ |
A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJTCSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩ |
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SiC BJT driver applied to a 2 kW inverter: Performances and limitations6th CIPS, Mar 2010, Nuremberg, Germany |
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Novel Structures of 3.3kV 4H-SiC BJTs to Reduce the Stacking Faults ExpansionISPSD, Jun 2009, Barcelone, Spain. à paraître |
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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD TechniqueECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩ |
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Accelerated Test for Reliability Analysis of SiC DiodesISPSD, Jun 2009, Barcelone, Spain. à paraître |
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High Power Density SiC 450A AccuMOSFET for Current Limiting ApplicationsCSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩ |
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The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodesISPSD '08, May 2008, Orlando, FL, United States. pp.237 - 240, ⟨10.1109/ISPSD.2008.4538942⟩ |
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Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analysesEuropean Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain |
1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodesECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 9, ⟨10.1109/EPE.2007.4417474⟩ |
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Composant de protection série en SiC 450A de forte densité de puissance12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France |
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Protection périphérique d’une diode bipolaire SiC-4H. Simulation électrique de JTE à dopage variable12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France |
High temperature behaviour of 3.5 kV 4H-SiC JBS diodesISPSD '07, May 2007, Jeju Island, South Korea. pp.285 - 288, ⟨10.1109/ISPSD.2007.4294988⟩ |
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Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETsInternational Semiconductor Conference, Sep 2006, Sinaia, Romania. pp.297 - 300, ⟨10.1109/SMICND.2006.284002⟩ |
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New diode designs compatible with vertical 4H-SiC JFET fabrication processCSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.1003-1006, ⟨10.4028/www.scientific.net/MSF.556-557.1003⟩ |
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1.2 kV pin diodes with SiCrystal epiwaferCSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.901-904, ⟨10.4028/www.scientific.net/MSF.556-557.901⟩ |
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Ni-Al Ohmic contact to p-type 4H-SiC2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩ |
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Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France |
High Temperature Characterization of 41-SiC Normally-On Vertical JFETs with Buried Gate and Buried Field RingsISPSD, 2006, Naples, Italy. pp.1 - 4, ⟨10.1109/ISPSD.2006.1666096⟩ |
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Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France |
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Deep SiC etching with RIEE-MRS 2006, May 2006, Nice, France. pp.3886392 |
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Gravure RIE profonde du SiC pour la réalisation de composants de puissance3eme colloque sur les Matériaux du Génie Electrique, Dec 2005, Lyon, France |
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SiC-based current limiter devicesInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩ |
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HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France |
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Conception d'un transistor JFET 5 kV en SiC-4H10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France |
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristorInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France |
Silicon Carbide specific components for power electronics system protectionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France |
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Design and simulation of a planar anode GTO thyristor on SiCCAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩ |
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Characterization of β-Ga2O3 and device fabricationSociété Française de Physique, Jun 2025, Troyes, France |
Optical Beam Induced Current Measurements: principles and applications to SiC device characterisationPeter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009 |
STRUCTURE SEMI-CONDUCTRICE POUR INTERRUPTEUR ELECTRONIQUE DE PUISSANCEFrance, N° de brevet: FR2963479. 2012, pp.22 |