Pierre BROSSELARD
78
Documents
Publications
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Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) techniqueICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
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Design and Characterization of an Optical 4H-SiC Bipolar Junction TransistorICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
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FilSiC – De l'épitaxie au module de puissanceSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès
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Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiCSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès
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Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductorsInternational Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic
Communication dans un congrès
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Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de siliciumSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBICSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
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Etude sur les transistors MOSFETs en Carbure de Silicium - Potentiel d'utilisation dans les Applications Hautes TempératuresSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
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Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumageSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
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4H-SiC VJFETs with Self-Aligned ContactsECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Communication dans un congrès
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspectsCAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩
Communication dans un congrès
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Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diodeInternational Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France
Communication dans un congrès
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3D TCAD Simulations for More Efficient SiC Power Devices DesignElectro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩
Communication dans un congrès
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Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transportInternational Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan
Communication dans un congrès
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PASChAC, système automatisé de caractérisation de composants sur waferElectronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France
Communication dans un congrès
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Protections périphériques de diodes bipolaires 10 kV en SiC-4H14ème Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, Bordeaux, France
Communication dans un congrès
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Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS TransportECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès
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Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transportProceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès
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Design and characterization of a novel 3.3 kV 4H-SiC JFETProceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès
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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature ApplicationsCIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès
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Buried selective growth of p-doped SiC by VLS epitaxyCSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
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Physical modelling of 4H-SiC PiN diodesCSCRM, Sep 2011, Cleveland, United States. pp.993-996, ⟨10.4028/www.scientific.net/MSF.717-720.993⟩
Communication dans un congrès
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High temperature capability of high voltage 4H-SiC JBSHeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.124-128, ⟨10.4028/www.scientific.net/MSF.711.124⟩
Communication dans un congrès
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Integration of temperature and current sensors in 4H-SiC VDMOSCSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
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600 V PiN diodes fabricated using on-axis 4H silicon carbideInternational Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩
Communication dans un congrès
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SiC BJT driver applied to a 2 kW inverter: Performances and limitations6th CIPS, Mar 2010, Nuremberg, Germany
Communication dans un congrès
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface StateCSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩
Communication dans un congrès
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Novel Structures of 3.3kV 4H-SiC BJTs to Reduce the Stacking Faults ExpansionISPSD, Jun 2009, Barcelone, Spain. à paraître
Communication dans un congrès
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Accelerated Test for Reliability Analysis of SiC DiodesISPSD, Jun 2009, Barcelone, Spain. à paraître
Communication dans un congrès
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A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJTCSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩
Communication dans un congrès
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The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodesISPSD '08, May 2008, Orlando, FL, United States. pp.237 - 240, ⟨10.1109/ISPSD.2008.4538942⟩
Communication dans un congrès
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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD TechniqueECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Communication dans un congrès
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Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analysesEuropean Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain
Communication dans un congrès
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High Power Density SiC 450A AccuMOSFET for Current Limiting ApplicationsCSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Communication dans un congrès
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High temperature behaviour of 3.5 kV 4H-SiC JBS diodesISPSD '07, May 2007, Jeju Island, South Korea. pp.285 - 288, ⟨10.1109/ISPSD.2007.4294988⟩
Communication dans un congrès
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1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodesECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 9, ⟨10.1109/EPE.2007.4417474⟩
Communication dans un congrès
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Ni-Al Ohmic contact to p-type 4H-SiC2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩
Communication dans un congrès
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High Temperature Characterization of 41-SiC Normally-On Vertical JFETs with Buried Gate and Buried Field RingsISPSD, 2006, Naples, Italy. pp.1 - 4, ⟨10.1109/ISPSD.2006.1666096⟩
Communication dans un congrès
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1.2 kV pin diodes with SiCrystal epiwaferCSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.901-904, ⟨10.4028/www.scientific.net/MSF.556-557.901⟩
Communication dans un congrès
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New diode designs compatible with vertical 4H-SiC JFET fabrication processCSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.1003-1006, ⟨10.4028/www.scientific.net/MSF.556-557.1003⟩
Communication dans un congrès
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Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETsInternational Semiconductor Conference, Sep 2006, Sinaia, Romania. pp.297 - 300, ⟨10.1109/SMICND.2006.284002⟩
Communication dans un congrès
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Deep SiC etching with RIEE-MRS 2006, May 2006, Nice, France. pp.3886392
Communication dans un congrès
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristorInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
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SiC-based current limiter devicesInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩
Communication dans un congrès
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Design and simulation of a planar anode GTO thyristor on SiCCAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩
Communication dans un congrès
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Silicon Carbide specific components for power electronics system protectionInternational Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès
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Optical Beam Induced Current Measurements: principles and applications to SiC device characterisationPeter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009
Chapitre d'ouvrage
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STRUCTURE SEMI-CONDUCTRICE POUR INTERRUPTEUR ELECTRONIQUE DE PUISSANCEFrance, N° de brevet: FR2963479. 2012, pp.22
Brevet
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