Accéder directement au contenu

Pierre BROSSELARD

78
Documents

Publications

Image document

Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung
Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩
Article dans une revue hal-04276812v1
Image document

Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

Besar Asllani , Jean Baptiste Fonder , Pascal Bevilacqua , Dominique Planson , Luong Viet Phung
Materials Science Forum, 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩
Article dans une revue hal-01857352v1
Image document

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

Besar Asllani , Maxime Berthou , Dominique Tournier , Pierre Brosselard , Phillippe Godignon
Materials Science Forum, 2016, 858, pp.741 - 744. ⟨10.4028/www.scientific.net/MSF.858.741⟩
Article dans une revue hal-01646323v1
Image document

Cryogenic to High Temperature Exploration of 4H-SiC W-SBD

Maxime Berthou , Besar Asllani , Pierre Brosselard , Philippe Godignon
Materials Science Forum, 2015, 821-823, pp.583-587. ⟨10.4028/www.scientific.net/MSF.821-823.583⟩
Article dans une revue hal-01646326v1
Image document

Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode

Pierre Brosselard , Florian Chevalier , Benjamin Proux , Nicolas Thierry-Jebali , Pascal Bevilacqua
Materials Science Forum, 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩
Article dans une revue hal-02133670v1

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Florian Chevalier , Pierre Brosselard , Dominique Tournier , G. Grosset , L. Dupuy
Materials Science Forum, 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩
Article dans une revue hal-00803057v1

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali
Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩
Article dans une revue hal-00803058v1

Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo Ha , Davy Carole , Véronique Soulière
Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩
Article dans une revue hal-01627792v1

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Duy Minh Nguyen , Runhua Huang , Luong Viet Phung , Dominique Planson , Maxime Berthou
Materials Science Forum, 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩
Article dans une revue hal-01627801v1

Integration of temperature and current sensors in 4H-SiC VDMOS

Maxime Berthou , Philippe Godignon , Pierre Brosselard , Dominique Tournier , José Millán
Materials Science Forum, 2012, 717-720, pp.1093-1096. ⟨10.4028/www.scientific.net/MSF.717-720.1093⟩
Article dans une revue hal-00803062v1
Image document

600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson
Materials Science Forum, 2012
Article dans une revue hal-02126341v1

Buried selective growth of p-doped SiC by VLS epitaxy

Davy Carole , Stéphane Berckmans , Arthur Vo-Ha , Mihai Lazar , Dominique Tournier
Materials Science Forum, 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩
Article dans une revue hal-00803061v1

SiC Schottky diodes for harsh environment space applications

Philippe Godignon , Xavier Jordà , Miquel Vellvehi , Xavier Perpina , Viorel Banu
IEEE Transactions on Industrial Electronics, 2011, 58 (7), pp.2582 - 2590. ⟨10.1109/TIE.2010.2080252⟩
Article dans une revue hal-00747617v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel
Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩
Article dans une revue hal-00799902v1
Image document

Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard
Materials Science Forum, 2011, 679-680, pp.477-480. ⟨10.4028/www.scientific.net/MSF.679-680.477⟩
Article dans une revue hal-04343373v1

Experimental determination of impact ionization coefficients in 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Nicolas Dheilly , Mihai Lazar , Dominique Tournier
Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩
Article dans une revue hal-00661429v1

High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

Pierre-Nicolas Volpe , Pierre Muret , Julien Pernot , Franck Omnès , Tokuyuki Teraji
physica status solidi (a), 2010, 207 (9), pp.2088-2092. ⟨10.1002/pssa.201000055⟩
Article dans une revue hal-00739492v1
Image document

Extreme dielectric strength in boron doped homoepitaxial diamond

Pierre-Nicolas Volpe , Pierre Muret , Julien Pernot , Franck Omnès , Tokuyuki Teraji
Applied Physics Letters, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩
Article dans une revue hal-00734714v1
Image document

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson
Materials Science Forum, 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩
Article dans une revue hal-02168907v1
Image document

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Jawad Ul Hassan , Pascal Bevilacqua
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Article dans une revue hal-04368136v1

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Christophe Raynaud , Duy Minh Nguyen , Pierre Brosselard , Amador Pérez-Tomás , Dominique Planson
Materials Science Forum, 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩
Article dans une revue hal-00391462v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Article dans une revue hal-04368124v1

Comparaison de diodes SiC-4H Schottky et bipolaires 3 kV-20 A

Pierre Brosselard , M. Berthou , Xavier Jordà , Philippe Godignon , José del R. Millán
European Journal of Electrical Engineering, 2009, 12 (2), pp.225-236. ⟨10.3166/ejee.12.225-236⟩
Article dans une revue hal-00403379v1

Optical beam induced current measurements: principles and applications to SiC device characterization

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard
physica status solidi (a), 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩
Article dans une revue hal-00398971v1
Image document

Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

Pierre Brosselard , Nicolas Camara , Viorel Banu , Xavier Jordà , Miquel Vellvehi
IEEE Transactions on Electron Devices, 2008, 55 (8), pp.1847 - 1856. ⟨10.1109/TED.2008.926636⟩
Article dans une revue hal-00369497v1
Image document

1.2 kV pin diodes with SiCrystal epiwafer

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.901-904. ⟨10.4028/www.scientific.net/MSF.556-557.901⟩
Article dans une revue hal-04369138v1
Image document

Composants de puissance en SiC. Etat de l'art

Dominique Planson , Christophe Raynaud , Pierre Brosselard , Dominique Bergogne , Mihai Lazar
European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611
Article dans une revue hal-04371563v1

Edge termination strategies for a 4 kV 4H-SiC thyristor

Pierre Brosselard , Dominique Planson , Sigo Scharnholz , Christophe Raynaud , V. Zorngiebel
Solid-State Electronics, 2006, 50 (7-8), pp.1183-1188
Article dans une revue hal-00140104v1
Image document

Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
Superlattices and Microstructures, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩
Article dans une revue hal-00179458v1
Image document

Fabrication and Characterisation of High Voltage SiC-Thyristors

Volker Zorngiebel , Sigo Scharnholz , Emil Spahn , Pierre Brosselard , N. Arssi
Materials Science Forum, 2003, 433-436, pp.883-886. ⟨10.4028/www.scientific.net/MSF.433-436.883⟩
Article dans une revue hal-02489305v1
Image document

Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville , Pierre Brosselard
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès hal-04218429v1
Image document

Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès hal-04222211v1
Image document

FilSiC – De l'épitaxie au module de puissance

Philippe Cussac , Cyrille Duchesne , Jean-Baptiste Fonder , Dominique Tournier , Pierre Brosselard
Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès hal-01361598v1
Image document

Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiC

Beverley Choucoutou , Luong Viet Phung , Pierre Brosselard , Michel Mermet-Guyennet , Dominique Planson
Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès hal-01361668v1
Image document

Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors

Bertrand Vergne , Sigo Scharnholz , Dominique Planson , Dominique Tournier , Pierre Brosselard
International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic
Communication dans un congrès hal-02428642v1
Image document

Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de silicium

Besar Asllani , Shiqin Niu , Patrick Denis , Maxime Berthou , Dominique Tournier
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065193v1
Image document

Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065307v1
Image document

Etude sur les transistors MOSFETs en Carbure de Silicium - Potentiel d'utilisation dans les Applications Hautes Températures

Rémy Ouaida , Pierre Brosselard , Pascal Bevilacqua
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065420v1
Image document

Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumage

Sigo Scharnholz , Luong Viêt Phung , Dominique Tournier , Bertrand Vergne , Ralf Hassdorf
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065352v1
Image document

4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Communication dans un congrès hal-02133681v1
Image document

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Dominique Planson , Pierre Brosselard , Karine Isoird , Mihai Lazar , Luong Viêt Phung
CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩
Communication dans un congrès hal-01388002v1
Image document

Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode

Pierre Brosselard , F Chevalier , B Proux , N Thierry-Jebali , Pascal Bevilacqua
International Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France
Communication dans un congrès hal-04022951v1

3D TCAD Simulations for More Efficient SiC Power Devices Design

Luong Viêt Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , Christian Brylinski
Electro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩
Communication dans un congrès hal-04240572v1
Image document

Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport

N Thierry-Jebali , Mihai Lazar , A Vo-Ha , D Carole , V Soulière
International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan
Communication dans un congrès hal-04011693v1
Image document

PASChAC, système automatisé de caractérisation de composants sur wafer

Bertrand Vergne , Gontran Pâques , Claudia Maurer , Sigo Scharnholz , Pierre Brosselard
Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France
Communication dans un congrès hal-02282734v1
Image document

Protections périphériques de diodes bipolaires 10 kV en SiC-4H

Duy Minh Nguyen , Runhua Huang , Bertrand Vergne , Pascal Bevilacqua , Philippe Godignon
14ème Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, Bordeaux, France
Communication dans un congrès hal-04560471v1
Image document

Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04362529v1
Image document

Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo-Ha , Davy Carole , Véronique Soulière
Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04366810v1
Image document

Design and characterization of a novel 3.3 kV 4H-SiC JFET

Florian Chevalier , Pierre Brosselard , D. Tournier , Grégory Grosset , Lionel Dupuy
Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04048180v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès hal-00661500v1

Buried selective growth of p-doped SiC by VLS epitaxy

Davy Carole , Stéphane Berckmans , Arthur Vo-Ha , Mihai Lazar , Dominique Tournier
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747294v1

Physical modelling of 4H-SiC PiN diodes

Craig A. Fischer , Michael R. Jennings , Angus T. Bryant , Amador Pérez-Tomás , Peter M. Gammon
CSCRM, Sep 2011, Cleveland, United States. pp.993-996, ⟨10.4028/www.scientific.net/MSF.717-720.993⟩
Communication dans un congrès hal-00747601v1

High temperature capability of high voltage 4H-SiC JBS

Maxime Berthou , Philippe Godignon , Bertrand Vergne , Pierre Brosselard
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.124-128, ⟨10.4028/www.scientific.net/MSF.711.124⟩
Communication dans un congrès hal-00747613v1

Integration of temperature and current sensors in 4H-SiC VDMOS

Maxime Berthou , Philippe Godignon , Pierre Brosselard , Dominique Tournier , José Millán
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747607v1
Image document

600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson
International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩
Communication dans un congrès hal-00747295v1

SiC BJT driver applied to a 2 kW inverter: Performances and limitations

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson , Bruno Allard
6th CIPS, Mar 2010, Nuremberg, Germany
Communication dans un congrès hal-00579223v1
Image document

Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard
CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩
Communication dans un congrès hal-00661443v1

Novel Structures of 3.3kV 4H-SiC BJTs to Reduce the Stacking Faults Expansion

Pierre Brosselard , Dominique Tournier , Viorel Banu , Xavier Jordà , Philippe Godignon
ISPSD, Jun 2009, Barcelone, Spain. à paraître
Communication dans un congrès hal-00375323v1

Accelerated Test for Reliability Analysis of SiC Diodes

Viorel Banu , Xavier Jordà , Josep Montserrat , Philippe Godignon , José del R. Millán
ISPSD, Jun 2009, Barcelone, Spain. à paraître
Communication dans un congrès hal-00380318v1

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson
CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩
Communication dans un congrès hal-00496976v1

The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

Pierre Brosselard , A. P. Tomas , Nicolas Camara , J. Hassan , Xavier Jordà
ISPSD '08, May 2008, Orlando, FL, United States. pp.237 - 240, ⟨10.1109/ISPSD.2008.4538942⟩
Communication dans un congrès hal-00369518v1

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Hassan Jawad , Pascal Bevilacqua
ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Communication dans un congrès hal-00391369v1
Image document

Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses

Christophe Raynaud , D M Nguyen , Pierre Brosselard , A Pérez-Tomás , Dominique Planson
European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain
Communication dans un congrès hal-03331775v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard
CSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Communication dans un congrès hal-00391376v1

High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

Pierre Brosselard , Xavier Jordà , Miquel Vellvehi , Philippe Godignon , J. P. Bergman
ISPSD '07, May 2007, Jeju Island, South Korea. pp.285 - 288, ⟨10.1109/ISPSD.2007.4294988⟩
Communication dans un congrès hal-00369526v1

1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes

Pierre Brosselard , Xavier Jordà , Miquel Vellvehi , Amador Pérez-Tomás , Philippe Godignon
ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 9, ⟨10.1109/EPE.2007.4417474⟩
Communication dans un congrès hal-00369523v1
Image document

Ni-Al Ohmic contact to p-type 4H-SiC

Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩
Communication dans un congrès hal-03316263v1

High Temperature Characterization of 41-SiC Normally-On Vertical JFETs with Buried Gate and Buried Field Rings

A. Mihaila , F. Udrea , S. J. Rashid , Philippe Godignon , Pierre Brosselard
ISPSD, 2006, Naples, Italy. pp.1 - 4, ⟨10.1109/ISPSD.2006.1666096⟩
Communication dans un congrès hal-00369512v1

1.2 kV pin diodes with SiCrystal epiwafer

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremilleu
CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.901-904, ⟨10.4028/www.scientific.net/MSF.556-557.901⟩
Communication dans un congrès hal-00358819v1

New diode designs compatible with vertical 4H-SiC JFET fabrication process

Pierre Brosselard , Dominique Tournier , Miquel Vellvehi , Josep Montserrat , Philippe Godignon
CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.1003-1006, ⟨10.4028/www.scientific.net/MSF.556-557.1003⟩
Communication dans un congrès hal-00391386v1

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

A. Mihaila , F. Udrea , S. J. Rashid , Philippe Godignon , Pierre Brosselard
International Semiconductor Conference, Sep 2006, Sinaia, Romania. pp.297 - 300, ⟨10.1109/SMICND.2006.284002⟩
Communication dans un congrès hal-00369507v1
Image document

Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
E-MRS 2006, May 2006, Nice, France. pp.3886392
Communication dans un congrès hal-03305997v1
Image document

Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , J.-P Chante
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02503456v1
Image document

SiC-based current limiter devices

Jean-Pierre Chante , Dominique Tournier , Dominique Planson , Christophe Raynaud , Mihai Lazar
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩
Communication dans un congrès hal-04032970v1
Image document

Design and simulation of a planar anode GTO thyristor on SiC

Pierre Brosselard , Dominique Planson , Sigo Scharnholz , V. Zorngiebel , Mihai Lazar
CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩
Communication dans un congrès hal-00410085v1

Silicon Carbide specific components for power electronics system protection

J.-P Chante , Dominique Planson , Christophe Raynaud , Marie-Laure Locatelli , M. Lazar
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02503449v1

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard
Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009
Chapitre d'ouvrage hal-00661529v1