pierre-olivier jeannin
100
Documents
Publications
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État de l'art de la recherche vers une électronique de puissance soutenableSymposium de Génie Electrique (SGE2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04244521v1
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Towards a Common Mode Current Free Packaging Solution for High Voltage Series Connected SiC MOSFET SwitchesPower Electronics, Intelligent Motion, Renewable Energy and Energy Management ( PCIM ) Europe, May 2023, Nuremberg, Germany
Communication dans un congrès
hal-04147021v1
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High-Speed Digital Electronics Board on a Novel Biobased and Biodegradable Substrate2023 46th International Spring Seminar on Electronics Technology (ISSE), May 2023, Timisoara, Romania. pp.1-5, ⟨10.1109/ISSE57496.2023.10168477⟩
Communication dans un congrès
hal-04194566v1
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Packaging design for low EMI generation of power modulesInternational Workshop on Integrated Power Packaging (IWIPP) 2022, Aug 2022, GRENOBLE, France
Communication dans un congrès
hal-03795727v1
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Experimental investigation of a 10 kV-70A switch with six SiC-MOSFETs in a series-connection configurationEuropean Conference on Silicon Carbide and Related Materials, Oct 2021, Tours, France
Communication dans un congrès
hal-03470255v1
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Model parameter extraction tool for the analysis of seriesconnected SiC-MOSFETsPCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2021, Nuremberg (on line), Germany
Communication dans un congrès
hal-03506812v1
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Towards the implementation of diamond power devices in power converters and measurements of their switching lossesMRS Spring Meeting 2021, Apr 2021, Seattle, United States
Communication dans un congrès
hal-03289135v1
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Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic FieldThe 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021), Oct 2021, Tours, France
Communication dans un congrès
hal-03615995v1
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3D PCB package for GaN inverter leg with low EMC feature2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon, France. pp.1-10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215641⟩
Communication dans un congrès
hal-03052046v1
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Full 3D advanced packaging concepts for Wide Bandgap Power ElectronicsAPEC 2020 – Industry session, Mar 2020, New Orleans, Louisiana, United States
Communication dans un congrès
hal-03051992v1
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A DC/DC Converter Based on a Very High Frequency Tuned Power OscillatorPCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2019, Nuremberg, Germany. pp.1--6
Communication dans un congrès
hal-02277151v1
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EMC Improvement with New Architectures of Gate Drivers for SiC MOSFET DevicesPCIM Europe 2019, May 2019, Nuremberg, Germany
Communication dans un congrès
hal-02130965v1
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A Comprehensive Sensitivity Evaluation of a GaN Based Class (phi)2 Inverter at Very High Frequency (VHF)2019 Ieee International Conference on Industrial Technology (icit), Feb 2019, Melbourne, Australia. pp.331--337
Communication dans un congrès
hal-03113655v1
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A predictive model to investigate the effects of gate driver on dv/dt in series-connected SiC-MOSFETsPCIM 2019, May 2019, Nuremberg, Germany
Communication dans un congrès
hal-02125170v1
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Multi-Step Packaging Concept for Series-Connected SiC MOSFETsEPE'19 ECCE Europe Conference, Sep 2019, Gênes, Italy
Communication dans un congrès
hal-02281510v1
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Etude de deux structures d'onduleurs Hautes Fréquences (HF) et Très Hautes Fréquences (THF) à transistor GaNSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02981856v1
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Determining the minimal decoupling capacitor in a high speed switching cell using optimizationecce 2018, Sep 2018, Portland, United States
Communication dans un congrès
hal-01885534v1
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Gate Driver Architectures Impacts on Voltage Balancing of SiC MOSFETs in Series ConnectionEPE-2018 ECCE 2018, Sep 2018, Riga, Latvia
Communication dans un congrès
hal-01883779v1
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Diamond Schottky barrier diodes for power electronics applicationsECCE 2018, Sep 2018, Portland, United States
Communication dans un congrès
hal-01885530v1
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Analyses of the unbalanced paralleled GaN HEMT transistors2018 20th European Conference on Power Electronics and Applications (epe'18 Ecce Europe), 2018, Riga, Latvia
Communication dans un congrès
hal-02331198v1
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Review on SiC-MOSFET Devices and Associated Gate DriversIEEE International Conference on Industrial Technology (ICIT), Feb 2018, Lyon, France
Communication dans un congrès
hal-01720421v1
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Diodes Schottky en Diamant : augmentation du calibre en courant et parallélisationSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02981846v1
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Analyses of the unbalanced paralleled GaN HEMT transistorsEPE - ECCE europe 2018, Sep 2018, Riga, Latvia
Communication dans un congrès
hal-01880068v1
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Etude et réalisation de deux structures d’onduleurs Hautes Fréquences (HF) et Très Hautes Fréquences (VHF) à transistor GaNSGE 2018, Jul 2018, Nancy, France
Communication dans un congrès
hal-01845189v1
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Diamond Devices for Power Electronics11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia
Communication dans un congrès
hal-01590457v1
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SIC power devices in power electronics: An overviewPower Electronics Conference (COBEP), 2017 Brazilian, 2017, Juiz de Fora, Brazil
Communication dans un congrès
hal-02330510v1
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SIC Power Devices in Power Electronics: An OverviewBrazilian Power Electronics Conference (COBEP), Nov 2017, Minas Gerais, Brazil
Communication dans un congrès
hal-02445586v1
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Diamond Schottky diodes interactions in power electronics applicationMRS 2017 Fall Meeting, Nov 2017, Boston, United States
Communication dans un congrès
hal-01655900v1
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Parallel and interleaved structures for diamond Schottky diodesEPE 2017 (ECCE Europe), Sep 2017, Varsovie, Poland
Communication dans un congrès
hal-01590604v1
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Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameterICDCM2016 - International Conference on Diamond and Carbon Materials, Sep 2016, Montpellier, France
Communication dans un congrès
hal-01366471v1
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Simulation numérique et caractérisation de composants de puissance en diamantSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361596v1
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Packaging 3D pour MOSFET en carbure de siliciumSymposium de Génie Electrique (SGE) 2016, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01332909v1
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Perturbations électromagnétiques conduites d’un bras d’onduleur à base de transistors en Nitrure de Galium: Structure « 3D » pour composants horizontauxSymposium de Genie Electrique 2016 (SGE 2016), Jun 2016, Grenoble, France
Communication dans un congrès
hal-01332707v1
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Packaging 3D pour MOSFET en carbure de siliciumSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361591v1
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A Novel 3D Structure for Synchronous Buck Converter Based on Nitride Gallium Transistors Energy Conversion Congress & Exposition (ECCE 2016), Sep 2016, Milwaukee, United States
Communication dans un congrès
hal-01373687v1
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Optimized Power Modules for Silicon Carbide MOSFET Energy Conversion Congress & Exposition (ECCE 2016), Sep 2016, Milwaukee, United States
Communication dans un congrès
hal-01373737v1
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Perturbations électromagnétiques conduites d'un bras d'onduleur à base de transistors en Nitrure de Galium: Structure « 3D » pour composants horizontauxSymposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361586v1
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Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States
Communication dans un congrès
hal-01306775v1
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Design of a GaN HEMT based inverter leg power module for aeronautic applications2016 6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. pp.1-6, ⟨10.1109/ESTC.2016.7764473⟩
Communication dans un congrès
hal-04156066v1
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Silicon carbide Power Chip On Chip Module Based On Embedded Die Technology With Paralleled DiesECCE 2015, Sep 2015, Montréal, Canada
Communication dans un congrès
hal-01212763v1
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Silicon Carbide Power Chip On Chip Module Based On Embedded Die Technology With Paralleled Dies Energy Conversion Congress and Exposition (ECCE 2015), Sep 2015, Montréal, Canada
Communication dans un congrès
hal-01380606v1
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Insulated Gate Driver for eGaN FetECCE 2014, Sep 2014, Pittsburgh, PA, United States
Communication dans un congrès
hal-01067186v1
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Realization and Characterization of an IGBT Module Based on the Power Chip-on-Chip 3D ConceptECCE, Sep 2014, Pittsburgh, PA, United States. ⟨10.1109/ECCE.2014.6954043⟩
Communication dans un congrès
hal-01067144v1
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Improvement Of GaN Transistors Working Conditions To Increase Efficiency Of A 100W DC-DC ConverterAPEC 2013, Mar 2013, Long Beach, United States
Communication dans un congrès
hal-00811816v1
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Partial Thermal Impedance Measurement for Die Interconnection Characterization by a microsecond "Pulsed Heating Curve TechniqueEPE'13 ECCE Europe, 2013, Lille, France
Communication dans un congrès
hal-00988257v1
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Design and control of a demagnetization circuit for permanent ON OFF operation in pulse transformer gate driverApplied Power Electronics Conference and Exposition APEC 2012, Feb 2012, Orlando, United States
Communication dans un congrès
hal-00673365v1
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High Frequency DC-DC Converter Using GaN DeviceApplied Power Electronics Conference and Exposition APEC 2012, Feb 2012, Orlando, United States. p1754 à 1761
Communication dans un congrès
hal-00673384v1
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Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermo-sensitive electrical parametersApplied Power Electronics Conference and Exposition APEC 2012, Feb 2012, Orlando, United States. p 182 à 189
Communication dans un congrès
hal-00673411v1
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Reduction of the Stray Inductance in a Switching Cell using the Power Chip-on-Chip 3D Integration ConceptECCE2012, Sep 2012, Raleigh, United States
Communication dans un congrès
hal-00736000v1
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Fault Tolerant 24 KVA Interleaved InverterECCE 2012, Sep 2012, Raleigh, United States
Communication dans un congrès
hal-00736009v1
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Development and electrical characterization of a vertical electrical and thermal test chip (VTTC)ECCE 2011 - IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, Sep 2011, PHOENIX, United States. pp.60-67, ⟨10.1109/ECCE.2011.6063749⟩
Communication dans un congrès
hal-00881531v1
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A new compact, isolated and integrated gate driver using high frequency transformer for interleaved Boost converterECCE 2011, Sep 2011, Phoenix, United States
Communication dans un congrès
hal-00626992v1
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Development and Electrical Characterization of a Vertical Electrical and Thermal Test Chip (VTTC)ECCE 2011, Sep 2011, Phoenix, United States
Communication dans un congrès
hal-00627287v1
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Reversing the power flow in the looped electrical distribution network by using a cascaded H-bridge D-SSSCIEEE PEDSTC 2011, Feb 2011, Téhéran, Iran
Communication dans un congrès
hal-00741672v1
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Compact, isolated and simple to implement gate driver using high frequency transformerAPEC 2011, Mar 2011, United States
Communication dans un congrès
hal-00577026v1
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The benefits of looping a radial distribution system with a power flow controllerPECON 2010, Nov 2010, Kuala Lampur, Malaysia
Communication dans un congrès
hal-00608226v1
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Series connection of IGBTAPEC 2010, Feb 2010, Palm Springs, United States. pp 2238 à 2244
Communication dans un congrès
hal-00461367v1
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Implementation and operational investigations of bipolar gate driversAPEC 2010, Feb 2010, Palm Springs, United States. pp.248 à 255
Communication dans un congrès
hal-00461409v1
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Composants actifs de puissance et architectures 3D pour une meilleure gestion du contact ETMElectronique de Puissance du Futur EPF 2010, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00514401v1
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Fault Tolerance on Interleaved inverter with Magnetic couplersAPEC 2010, Feb 2010, Palm Springs, United States. pp.1817 à 1824
Communication dans un congrès
hal-00461380v1
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A Novel Fuzzy Logic DC Bus Voltage Balancing Controller for a D-SSSC Cascaded H-bridge ConverterPEDSTC 2010, Feb 2010, Téhéran, Iran. pp.141-146
Communication dans un congrès
hal-00608439v1
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High Efficiency Interleaved Power Electronics Converter for wide operating power rangeAPEC 2009, 2009, Washingon, United States
Communication dans un congrès
hal-00364103v1
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Electrical Characterization of a Pressed Contact Between a Power Chip and a Metal ElectrodeI2MTC 2009, 2009, Singapour, Singapore
Communication dans un congrès
hal-00384063v1
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Driver numérique avec commande en courant des MOSFET et IGBTEPF 2008 XIIème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France. pp.255-258
Communication dans un congrès
hal-00294015v1
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Short-circuit limitation thanks to a series connected VSCAPEC'08, Feb 2008, Austin, United States
Communication dans un congrès
hal-00355342v1
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Study and Realization of a Low Force 3D Press-Pack Power ModulePower Electronics Specialists Conference PESC 08, Jun 2008, Rhodes, Greece. IEEE pesc conference, pp 1048-1054
Communication dans un congrès
hal-00292635v1
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Multi-level Converter Dimensioning with Structure and Losses Consideration for DFACTS ApplicationsEPE'2007, Sep 2007, Aalborg, Denmark
Communication dans un congrès
hal-00288820v1
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Modélisation avancée de module de puissanceJournées GdR, Oct 2005, Lyon, France
Communication dans un congrès
hal-00187678v1
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DISPOSITIF POUR CONVERTIR DE L'ENERGIE ELECTRIQUEFrance, N° de brevet: FR 2952481. 2011
Brevet
hal-00796977v1
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Integration solutions for clean and safe switching of high speed devices2018
Autre publication scientifique
hal-01759221v1
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Structures d'électronique de puissance moyenne tension à IGBT pour des applications de type DFACTS2006
Autre publication scientifique
hal-00200823v1
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Convertisseur de puissance pour l'aéronautique, à driver passif des IGBT, piloté par techniques numériques2006
Autre publication scientifique
hal-00200702v1
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Compensateur série pour réseau de distribution flexible2006
Autre publication scientifique
hal-00200819v1
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A Busbar Like Power Module Based On 3D Chip On Chip Hybrid Integration2009
Pré-publication, Document de travail
hal-00396884v1
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Etudes de faisabilité d'un module de puissance 3D de type presspack pour des applications de faible et moyenne puissances2008
Pré-publication, Document de travail
hal-00294246v1
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Le transistor MOSFET en commutation : Application aux associations série et parallèle de composants à grille isoléeSciences de l'ingénieur [physics]. Institut National Polytechnique de Grenoble - INPG, 2001. Français. ⟨NNT : ⟩
Thèse
tel-00549773v1
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Le transistor MOSFET en Commutation : Application aux Associations Série et Parallèle de Composants à grille isolée.Energie électrique. Institut National Polytechnique de Grenoble - INPG, 2001. Français. ⟨NNT : ⟩
Thèse
tel-00092429v1
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