pierre-olivier jeannin
Publications
Publications
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Power Electronics Solar Inverter on a Biosourced and Biodegradable Substrate -Thermal Study48th International Spring Seminar on Electronics Technology (ISSE 2025): “Sustainable electronics for a circular economy”, May 2025, Budapest, Hungary. ⟨10.1109/ISSE65583.2025.11120895⟩ |
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Contribution à la définition des enjeux et verrous de la soutenabilité en électronique de puissanceSymposium de Génie Electrique (SGE 2025), Jul 2025, Toulouse, France |
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État de l'art de la recherche vers une électronique de puissance soutenableSymposium de Génie Electrique (SGE2023), Jul 2023, Lille, France |
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Towards a Common Mode Current Free Packaging Solution for High Voltage Series Connected SiC MOSFET SwitchesPower Electronics, Intelligent Motion, Renewable Energy and Energy Management ( PCIM ) Europe, May 2023, Nuremberg, Germany |
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High-Speed Digital Electronics Board on a Novel Biobased and Biodegradable Substrate2023 46th International Spring Seminar on Electronics Technology (ISSE), May 2023, Timisoara, Romania. pp.1-5, ⟨10.1109/ISSE57496.2023.10168477⟩ |
Packaging design for low EMI generation of power modulesInternational Workshop on Integrated Power Packaging (IWIPP) 2022, Aug 2022, GRENOBLE, France |
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Model parameter extraction tool for the analysis of seriesconnected SiC-MOSFETsPCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2021, Nuremberg (on line), Germany |
Towards the implementation of diamond power devices in power converters and measurements of their switching lossesMRS Spring Meeting 2021, Apr 2021, Seattle WA, United States |
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Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic FieldThe 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021), Oct 2021, Tours, France |
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Experimental investigation of a 10 kV-70A switch with six SiC-MOSFETs in a series-connection configurationEuropean Conference on Silicon Carbide and Related Materials, Oct 2021, Tours, France |
3D PCB package for GaN inverter leg with low EMC feature2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon, France. pp.1-10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215641⟩ |
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Full 3D advanced packaging concepts for Wide Bandgap Power ElectronicsAPEC 2020 – Industry session, Mar 2020, New Orleans, Louisiana, United States |
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A Comprehensive Sensitivity Evaluation of a GaN Based Class (phi)2 Inverter at Very High Frequency (VHF)2019 Ieee International Conference on Industrial Technology (icit), Feb 2019, Melbourne, Australia. pp.331--337 |
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EMC Improvement with New Architectures of Gate Drivers for SiC MOSFET DevicesPCIM Europe 2019, May 2019, Nuremberg, Germany |
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A DC/DC Converter Based on a Very High Frequency Tuned Power OscillatorPCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2019, Nuremberg, Germany. pp.1--6 |
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A predictive model to investigate the effects of gate driver on dv/dt in series-connected SiC-MOSFETsPCIM 2019, May 2019, Nuremberg, Germany |
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Multi-Step Packaging Concept for Series-Connected SiC MOSFETsEPE'19 ECCE Europe Conference, Sep 2019, Gênes, Italy |
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Diamond Schottky barrier diodes for power electronics applicationsECCE 2018, Sep 2018, Portland, United States |
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Gate Driver Architectures Impacts on Voltage Balancing of SiC MOSFETs in Series ConnectionEPE-2018 ECCE 2018, Sep 2018, Riga, Latvia |
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Determining the minimal decoupling capacitor in a high speed switching cell using optimizationecce 2018, Sep 2018, Portland, United States |
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Etude de deux structures d'onduleurs Hautes Fréquences (HF) et Très Hautes Fréquences (THF) à transistor GaNSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France |
Analyses of the unbalanced paralleled GaN HEMT transistors2018 20th European Conference on Power Electronics and Applications (epe'18 Ecce Europe), 2018, Riga, Latvia |
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Analyses of the unbalanced paralleled GaN HEMT transistorsEPE - ECCE europe 2018, Sep 2018, Riga, Latvia |
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Diodes Schottky en Diamant : augmentation du calibre en courant et parallélisationSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France |
Review on SiC-MOSFET Devices and Associated Gate DriversIEEE International Conference on Industrial Technology (ICIT), Feb 2018, Lyon, France |
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Etude et réalisation de deux structures d’onduleurs Hautes Fréquences (HF) et Très Hautes Fréquences (VHF) à transistor GaNSGE 2018, Jul 2018, Nancy, France |
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Diamond Devices for Power Electronics11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia |
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SIC power devices in power electronics: An overviewPower Electronics Conference (COBEP), 2017 Brazilian, 2017, Juiz de Fora, Brazil |
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SIC Power Devices in Power Electronics: An OverviewBrazilian Power Electronics Conference (COBEP), Nov 2017, Minas Gerais, Brazil |
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Diamond Schottky diodes interactions in power electronics applicationMRS 2017 Fall Meeting, Nov 2017, Boston, United States |
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Parallel and interleaved structures for diamond Schottky diodesEPE 2017 (ECCE Europe), Sep 2017, Varsovie, Poland |
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Packaging 3D pour MOSFET en carbure de siliciumSymposium de Génie Electrique (SGE) 2016, Jun 2016, Grenoble, France |
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Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameterICDCM2016 - International Conference on Diamond and Carbon Materials, Sep 2016, Montpellier, France |
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Simulation numérique et caractérisation de composants de puissance en diamantSymposium de Genie Electrique, Jun 2016, Grenoble, France |
Perturbations électromagnétiques conduites d’un bras d’onduleur à base de transistors en Nitrure de Galium: Structure « 3D » pour composants horizontauxSymposium de Genie Electrique 2016 (SGE 2016), Jun 2016, Grenoble, France |
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Packaging 3D pour MOSFET en carbure de siliciumSymposium de Genie Electrique, Jun 2016, Grenoble, France |
A Novel 3D Structure for Synchronous Buck Converter Based on Nitride Gallium TransistorsEnergy Conversion Congress & Exposition (ECCE 2016), Sep 2016, Milwaukee, United States |
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Perturbations électromagnétiques conduites d'un bras d'onduleur à base de transistors en Nitrure de Galium: Structure « 3D » pour composants horizontauxSymposium de Genie Electrique, Jun 2016, Grenoble, France |
Optimized Power Modules for Silicon Carbide MOSFETEnergy Conversion Congress & Exposition (ECCE 2016), Sep 2016, Milwaukee, United States |
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Design of a GaN HEMT based inverter leg power module for aeronautic applications2016 6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. pp.1-6, ⟨10.1109/ESTC.2016.7764473⟩ |
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Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States |
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Silicon carbide Power Chip On Chip Module Based On Embedded Die Technology With Paralleled DiesECCE 2015, Sep 2015, Montréal, Canada |
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Silicon Carbide Power Chip On Chip Module Based On Embedded Die Technology With Paralleled DiesEnergy Conversion Congress and Exposition (ECCE 2015), Sep 2015, Montréal, Canada |
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Insulated Gate Driver for eGaN FetECCE 2014, Sep 2014, Pittsburgh, PA, United States |
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Realization and Characterization of an IGBT Module Based on the Power Chip-on-Chip 3D ConceptECCE, Sep 2014, Pittsburgh, PA, United States. ⟨10.1109/ECCE.2014.6954043⟩ |
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Improvement Of GaN Transistors Working Conditions To Increase Efficiency Of A 100W DC-DC ConverterAPEC 2013, Mar 2013, Long Beach, United States |
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Partial Thermal Impedance Measurement for Die Interconnection Characterization by a microsecond "Pulsed Heating Curve TechniqueEPE'13 ECCE Europe, 2013, Lille, France |
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Design and control of a demagnetization circuit for permanent ON OFF operation in pulse transformer gate driverApplied Power Electronics Conference and Exposition APEC 2012, Feb 2012, Orlando, United States |
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Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermo-sensitive electrical parametersApplied Power Electronics Conference and Exposition APEC 2012, Feb 2012, Orlando, United States. p 182 à 189 |
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High Frequency DC-DC Converter Using GaN DeviceApplied Power Electronics Conference and Exposition APEC 2012, Feb 2012, Orlando, United States. p1754 à 1761 |
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Reduction of the Stray Inductance in a Switching Cell using the Power Chip-on-Chip 3D Integration ConceptECCE2012, Sep 2012, Raleigh, United States |
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Fault Tolerant 24 KVA Interleaved InverterECCE 2012, Sep 2012, Raleigh, United States |
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A new compact, isolated and integrated gate driver using high frequency transformer for interleaved Boost converterECCE 2011, Sep 2011, Phoenix, United States |
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Reversing the power flow in the looped electrical distribution network by using a cascaded H-bridge D-SSSCIEEE PEDSTC 2011, Feb 2011, Téhéran, Iran |
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Compact, isolated and simple to implement gate driver using high frequency transformerAPEC 2011, Mar 2011, United States |
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Development and electrical characterization of a vertical electrical and thermal test chip (VTTC)ECCE 2011 - IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, Sep 2011, PHOENIX, United States. pp.60-67, ⟨10.1109/ECCE.2011.6063749⟩ |
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Series connection of IGBTAPEC 2010, Feb 2010, Palm Springs, United States. pp 2238 à 2244 |
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Implementation and operational investigations of bipolar gate driversAPEC 2010, Feb 2010, Palm Springs, United States. pp.248 à 255 |
Composants actifs de puissance et architectures 3D pour une meilleure gestion du contact ETMElectronique de Puissance du Futur EPF 2010, Jun 2010, Saint-Nazaire, France |
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A Novel Fuzzy Logic DC Bus Voltage Balancing Controller for a D-SSSC Cascaded H-bridge ConverterPEDSTC 2010, Feb 2010, Téhéran, Iran. pp.141-146 |
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Fault Tolerance on Interleaved inverter with Magnetic couplersAPEC 2010, Feb 2010, Palm Springs, United States. pp.1817 à 1824 |
The benefits of looping a radial distribution system with a power flow controllerPECON 2010, Nov 2010, Kuala Lampur, Malaysia |
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High Efficiency Interleaved Power Electronics Converter for wide operating power rangeAPEC 2009, 2009, Washingon, United States |
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Electrical Characterization of a Pressed Contact Between a Power Chip and a Metal ElectrodeI2MTC 2009, 2009, Singapour, Singapore |
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Short-circuit limitation thanks to a series connected VSCAPEC'08, Feb 2008, Austin, United States |
Driver numérique avec commande en courant des MOSFET et IGBTEPF 2008 XIIème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France. pp.255-258 |
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Study and Realization of a Low Force 3D Press-Pack Power ModulePower Electronics Specialists Conference PESC 08, Jun 2008, Rhodes, Greece. IEEE pesc conference, pp 1048-1054 |
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Multi-level Converter Dimensioning with Structure and Losses Consideration for DFACTS ApplicationsEPE'2007, Sep 2007, Aalborg, Denmark |
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Modélisation avancée de module de puissanceJournées GdR, Oct 2005, Lyon, France |
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Stratégies multiéchelles de recyclage de déchets riches en métaux: du réacteur de laboratoire au pilote de terrainAFEM 2025 : 12ème colloque de l'Association Francophone d'Écologie Microbienne, Nov 2025, Beaune, France |
Integration solutions for clean and safe switching of high speed devices2018 |
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Convertisseur de puissance pour l'aéronautique, à driver passif des IGBT, piloté par techniques numériques2006 |
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Compensateur série pour réseau de distribution flexible2006 |
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Structures d'électronique de puissance moyenne tension à IGBT pour des applications de type DFACTS2006 |
DISPOSITIF POUR CONVERTIR DE L'ENERGIE ELECTRIQUEFrance, N° de brevet: FR 2952481. 2011 |
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A Busbar Like Power Module Based On 3D Chip On Chip Hybrid Integration2009 |
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Etudes de faisabilité d'un module de puissance 3D de type presspack pour des applications de faible et moyenne puissances2008 |
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Le transistor MOSFET en Commutation : Application aux Associations Série et Parallèle de Composants à grille isolée.Energie électrique. Institut National Polytechnique de Grenoble - INPG, 2001. Français. ⟨NNT : ⟩ |
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Le transistor MOSFET en commutation : Application aux associations série et parallèle de composants à grille isoléeSciences de l'ingénieur [physics]. Institut National Polytechnique de Grenoble - INPG, 2001. Français. ⟨NNT : ⟩ |