Quentin Rafhay

138
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Publications

Publications

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Simulation of yttria hot cathode and radiative emissivity impact on its performances and the work function measurement

Audrey Mayrat , Quentin Rafhay , Claire Verrier , Jean-Luc Deschanvres

Vacuum, 2025, 239, pp.114363. ⟨10.1016/j.vacuum.2025.114363⟩

Article dans une revue hal-05372636v2
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A current and LFN method for individually assessing layer quality in III-V multi-junctions

Alexandra Diaz , Corentin Jouanneau , Thomas Bidaud , Maxime Darnon , Gwenaelle Hamon et al.

Fluctuation and Noise Letters, 2025, ⟨10.1142/S0219477525400115⟩

Article dans une revue hal-05247239v1
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Assessing the contact quality of Si p-n diodes through series resistance noise characterization

Alexandra Diaz , Chloe Wulles , Maeva Franco , Antoine Albouy , Patrick Leduc et al.

Fluctuation and Noise Letters, 2025, ⟨10.1142/S0219477525400127⟩

Article dans une revue hal-05406753v1
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Simulation of Carrier Injection Pathways in Axial GaN Nanowire MicroLEDs

Amadéo Vibert , Mehdi Daanoune , Quentin Rafhay , Jean‐yves Duboz

Advanced Theory and Simulations, 2025, pp.e01183. ⟨10.1002/adts.202501183⟩

Article dans une revue hal-05459077v1
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Probing hidden conduction mechanisms in diced silicon solar cells by low frequency noise analysis

Chloé Wulles , Quentin Rafhay , Thibaut Desrues , Anne Kaminski , Christoforos Theodorou

Solar Energy Materials and Solar Cells, 2023, 256, pp.112344. ⟨10.1016/j.solmat.2023.112344⟩

Article dans une revue hal-04305470v1

Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices

Flore Boyer , Karen Dabertrand , Nicolas Bernier , Christophe Jany , Patrice Gergaud et al.

Materials Science in Semiconductor Processing, 2023, 154, pp.107199. ⟨10.1016/j.mssp.2022.107199⟩

Article dans une revue hal-04742893v1

Front SiON/TCO Stacks Development for Double-Side Poly-Si/SiO X Passivated Contacts Solar Cells

Charles Seron , Thibaut Desrues , Christine Denis , Raphael Cabal , Frederic Jay et al.

IEEE Journal of Photovoltaics, 2023, 13 (1), pp.33-39. ⟨10.1109/JPHOTOV.2022.3221556⟩

Article dans une revue hal-04742915v1

Passivating Silicon Tunnel Diode for Perovskite on Silicon Nip Tandem Solar Cells

Baptiste Marteau , Thibaut Desrues , Quentin Rafhay , Anne Kaminski , Sébastien Dubois

Energies, 2023, 16 (11), pp.4346. ⟨10.3390/en16114346⟩

Article dans une revue hal-04742929v1
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Universality of trap-induced mobility fluctuations between 1/f noise and Random Telegraph Noise in nanoscale FD-SOI MOSFETs

Owen Gauthier , Sébastien Haendler , Quentin Rafhay , Christoforos Theodorou

Applied Physics Letters, 2023, 122 (23), ⟨10.1063/5.0152734⟩

Article dans une revue hal-04305435v1
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1S1R optimization for high‐frequency inference on binarized spiking neural networks

Joel Minguet Lopez , Quentin Rafhay , Manon Dampfhoffer , Lucas Reganaz , Niccolo Castellani et al.

Advanced Electronic Materials, 2022, 2022 (8), pp.2200323. ⟨10.1002/aelm.202200323⟩

Article dans une revue cea-03707409v1

Simulation study of high-speed Ge photodetector dark and light current degradation

Balraj Arunachalam , Quentin Rafhay , David Roy , Anne Kaminski-Cachopo

IEEE Transactions on Device and Materials Reliability, 2022, pp.1-1. ⟨10.1109/TDMR.2022.3185671⟩

Article dans une revue hal-03765765v1
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Parasitic oscillation in the low-frequency noise characterization of solar cells

Chloé Wulles , Quentin Rafhay , Thibaut Desrues , Anne Kaminski , Christoforos Theodorou

Solid-State Electronics, 2022, 194, pp.108327. ⟨10.1016/j.sse.2022.108327⟩

Article dans une revue hal-03876783v1
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Hydrogenation of sputtered ZnO:Al layers for double side poly-Si/SiOx solar cells

Charles Seron , Thibaut Desrues , Frederic Jay , Adeline Lanterne , Frank Torregrosa et al.

EPJ Photovoltaics, 2022, 13, pp.8. ⟨10.1051/epjpv/2022005⟩

Article dans une revue hal-03649761v1

Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data

Lucas Reganaz , Eduardo Esmanhotto , Nazim Ait Abdelkader , Joel Minguet Lopez , Niccolo Castellani et al.

Physica Status Solidi A (applications and materials science), 2022, 219 (13), pp.2100753. ⟨10.1002/pssa.202100753⟩

Article dans une revue hal-03840622v1
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Enhanced statistical detection of random telegraph noise in frequency and time domain

Owen Gauthier , Sébastien Haendler , Patrick Scheer , Alexandre Vernhet , Quentin Rafhay et al.

Solid-State Electronics, 2022, 194, pp.108320. ⟨10.1016/j.sse.2022.108320⟩

Article dans une revue hal-03762370v1
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Platinum redistribution in the Ni0.9Pt0.1/InP system: Impact on solid-state reaction and layer morphology

F. Boyer , K. Dabertrand , P. Gergaud , M. Grégoire , Quentin Rafhay et al.

Materials Science in Semiconductor Processing, 2021, 128, pp.105731. ⟨10.1016/j.mssp.2021.105731⟩

Article dans une revue hal-04742836v1
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Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

Klaasjan Maas , Edouard Villepreux , David Cooper , Carmen Jimenez , Hervé Roussel et al.

Journal of Materials Chemistry C, 2020, 8 (2), pp.464-472. ⟨10.1039/c9tc03972d⟩

Article dans une revue hal-02428216v1
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Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers

Flore Boyer , Patrice Gergaud , Karen Dabertrand , Denis Mariolle , Christophe Jany et al.

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (1), pp.012209. ⟨10.1116/1.5128554⟩

Article dans une revue hal-04743063v1
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Tuning Memristivity by Varying the Oxygen Content in a Mixed Ionic–Electronic Conductor

Klaasjan Maas , Edouard Villepreux , David Cooper , Eduardo Salas-Colera , Juan Rubio- Zuazo et al.

Advanced Functional Materials, 2020, 30 (17), pp.1909942. ⟨10.1002/adfm.201909942⟩

Article dans une revue hal-02994852v1

Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III–V Devices on a 300-mm Platform

F. Boyer , K. Dabertrand , C. Jany , P. Gergaud , N. Coudurier et al.

IEEE Transactions on Electron Devices, 2020, 67 (6), pp.2495-2502. ⟨10.1109/TED.2020.2985766⟩

Article dans une revue hal-04743053v1

Reliability Characterization and Modelling of High Speed Ge Photodetectors

F. Sy , Q. Rafhay , Julien Poette , G. Grosa , G. Beylier et al.

IEEE Transactions on Device and Materials Reliability, 2019, pp.1-1. ⟨10.1109/TDMR.2019.2945996⟩

Article dans une revue hal-02321345v1

Reliability Characterization and Modeling of High Speed Ge Photodetectors

Fatoumata Sy , Quentin Rafhay , J. Poëtte , Gregory Grosa , Gaelle Beylier et al.

IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.688-695. ⟨10.1109/TDMR.2019.2945996⟩

Article dans une revue hal-04743074v1

Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation

Diego Alfaro Robayo , Gilbert Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas et al.

IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2911661⟩

Article dans une revue hal-02126884v1
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Integration of LaMnO 3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

Raquel Rodriguez-Lamas , Dolors Pla , Odette Chaix-Pluchery , Benjamin Meunier , Fabrice Wilhelm et al.

Beilstein Journal of Nanotechnology, 2019, 10, pp.389-398. ⟨10.3762/bjnano.10.38⟩

Article dans une revue hal-02012546v1

Effects of the pH on the Formation and Doping Mechanisms of ZnO Nanowires Using Aluminum Nitrate and Ammonia

Claire Verrier , Estelle Appert , Odette Chaix-Pluchery , Laetitia Rapenne , Quentin Rafhay et al.

Inorganic Chemistry, 2017, 56 (21), pp.13111-13122. ⟨10.1021/acs.inorgchem.7b01916⟩

Article dans une revue hal-01758854v1

Tunable Morphology and Doping of ZnO Nanowires by Chemical Bath Deposition Using Aluminum Nitrate

Claire Verrier , Estelle Appert , Odette Chaix-Pluchery , Laetitia Rapenne , Quentin Rafhay et al.

Journal of Physical Chemistry C, 2017, 121 (6), pp.3573-3583. ⟨10.1021/acs.jpcc.6b11104⟩

Article dans une revue hal-01758853v1
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Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations

Vladimir Maryasin , Davide Bucci , Quentin Rafhay , Federico Panicco , Jérôme Michallon et al.

Solar Energy Materials and Solar Cells, 2017, 172, pp.314-323. ⟨10.1016/j.solmat.2017.07.041⟩

Article dans une revue hal-01959103v1

New Y -function based MOSFET parameter extraction method from weak to strong inversion range

J.B. Henry , Q. Rafhay , A. Cros , G. Ghibaudo

Solid-State Electronics, 2016, 123, pp.84-88. ⟨10.1016/j.sse.2016.06.004⟩

Article dans une revue istex hal-01947687v1

Resistive memory variability: A simplified trap-assisted tunneling model

Daniele Garbin , Elisa Vianello , Quentin Rafhay , Mourad Azzaz , Philippe Candelier et al.

Solid-State Electronics, 2016, 115, pp.126-132. ⟨10.1016/j.sse.2015.09.004⟩

Article dans une revue istex hal-01947671v1

Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo

IEEE Transactions on Electron Devices, 2015, 62 (5), pp.1375-1382. ⟨10.1109/TED.2015.2406116⟩

Article dans une revue hal-01947637v1

Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo

IEEE Transactions on Electron Devices, 2015, 62 (3), pp.972-979. ⟨10.1109/TED.2015.2388788⟩

Article dans une revue hal-01947634v1

HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

Daniele Garbin , Elisa Vianello , Olivier Bichler , Quentin Rafhay , Christian Gamrat et al.

IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2494-2501. ⟨10.1109/TED.2015.2440102⟩

Article dans une revue hal-01947647v1

Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

G. Hiblot , Q. Rafhay , F. Boeuf , G. Ghibaudo

Solid-State Electronics, 2015, 111, pp.188-195. ⟨10.1016/j.sse.2015.06.008⟩

Article dans une revue istex hal-01947653v1

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Gaspard Hiblot , Gabriel Mugny , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo

IEEE Transactions on Nanotechnology, 2015, 14 (4), pp.768-775. ⟨10.1109/TNANO.2015.2444653⟩

Article dans une revue hal-01947645v1

Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology

G. Hiblot , J. Lacord , M. Akbal , Q. Rafhay , F. Boeuf et al.

Solid-State Electronics, 2015, 107, pp.1-7. ⟨10.1016/j.sse.2015.02.001⟩

Article dans une revue istex hal-01947635v1

Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices

Gaspard Hiblot , Tapas Dutta , Quentin Rafhay , Joris Lacord , Madjid Akbal et al.

IEEE Transactions on Electron Devices, 2015, 62 (1), pp.28-35. ⟨10.1109/TED.2014.2368395⟩

Article dans une revue hal-01947631v1

Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire

G. Hiblot , Q. Rafhay , F. Boeuf , G. Ghibaudo

Solid-State Electronics, 2014, 100, pp.71-78. ⟨10.1016/j.sse.2014.07.001⟩

Article dans une revue istex hal-01947623v1

Analytical relationship between subthreshold swing of thermionic and tunnelling currents

G. Hiblot , Quentin Rafhay , F. Boeuf , G. Ghibaudo

Electronics Letters, 2014, 50 (23), pp.1745-1747. ⟨10.1049/el.2014.3206⟩

Article dans une revue hal-01959261v1

Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes

T. Dutta , Q. Rafhay , R. Clerc , J. Lacord , S. Monfray et al.

Solid-State Electronics, 2013, 88, pp.43-48. ⟨10.1016/j.sse.2013.04.007⟩

Article dans une revue istex hal-01002086v1

Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs

B. Sklenard , P. Batude , Q. Rafhay , I. Martin-Bragado , C.Q. Xu et al.

Solid-State Electronics, 2013, 88, pp.9-14. ⟨10.1016/j.sse.2013.04.018⟩

Article dans une revue istex hal-01002090v1

New parameter extraction method based on split C-V measurements in FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Q. Rafhay et al.

Solid-State Electronics, 2013, 84, pp.142-146. ⟨10.1016/j.sse.2013.02.011⟩

Article dans une revue istex hal-01002112v1

Revisited approach for the characterization of Gate Induced Drain Leakage

Quentin Rafhay , Cuiqin Xu , Perrine Batude , Mireille Mouis , Maud Vinet et al.

Solid-State Electronics, 2012, 71, pp.37-41. ⟨10.1109/ULIS.2011.5757994⟩

Article dans une revue hal-01959351v1

An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering

Alban Zaka , Pierpaolo Palestri , Quentin Rafhay , Raphael Clerc , Matteo Iellina et al.

IEEE Transactions on Electron Devices, 2012, 59 (4), pp.983-993

Article dans une revue hal-01959366v1

Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

A. Zaka , J. Singer , E. Dornel , D. Garetto , D. Rideau et al.

Solid-State Electronics, 2011, 63 (1), pp.158-162. ⟨10.1016/j.sse.2011.05.017⟩

Article dans une revue istex hal-01959389v1

On the Accuracy of Current TCAD Hot Carrier Injection Models in Nanoscale Devices

A. Zaka , Q. Rafhay , M. Iellina , P. Palestri , R. Clerc et al.

Solid-State Electronics, 2010, 54 (12), pp.1669-1674

Article dans une revue hal-00596340v1

Investigation of Back-Bias Capacitance Coupling Coefficient Measurement Methodology for Floating-Gate Nonvolatile Memory Cells

M. Florian Beug , Quentin Rafhay , Michiel van Duuren , Russell Duane

IEEE Transactions on Electron Devices, 2010, 57 (6), pp.1253-1260

Article dans une revue hal-01959422v1

Impact of Channel Orientation on Ballistic Current of nDGFETs with Alternative Channel Materials

Q. Rafhay , R. Clerc , M. Ferrier , G. Pananakakis , G. Ghibaudo

Solid-State Electronics, 2008, 52 (Issue 4), pp.540-547

Article dans une revue hal-00391540v1

Semi-analytical modeling of short channel effects in Si and Ge symmetrical double-gate MOSFETs

A. Tsormpatzoglou , C. Dimitriadis , R. Clerc , Q. Rafhay , G. Pananakakis et al.

IEEE Transactions on Electron Devices, 2008, 54 (8), pp.1943-1946

Article dans une revue hal-00392897v1

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs

Q. Rafhay , R. Clerc , G. Ghibaudo , G. Pananakakis

Solid-State Electronics, 2008, 52 (Issue 10), pp.1474-1481

Article dans une revue hal-00391582v1

Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs

M. Ferrier , Raphael Clerc , L. Lucci , Quentin Rafhay , Georges Pananakakis et al.

IEEE Transactions on Nanotechnology, 2007, 6 (6), pp.613-621

Article dans une revue hal-01957720v1

Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

Quentin Rafhay , M. Florian Beug , Russell Duane

Solid-State Electronics, 2007, 51 (4), pp.585-592

Article dans une revue hal-01959440v1

Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor

Russell Duane , Quentin Rafhay , M. Florian Beug , Michiel van Duuren

IEEE Electron Device Letters, 2007, 28 (5), pp.440-442

Article dans une revue hal-01959438v1
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Experimental Evidence of Light Source Contribution in the Noise of Optoelectronic Devices Under Illumination

Alexandra Diaz , Chloé Wulles , Christoforos Theodorou , Anne Kaminski , Quentin Rafhay

2023 International Conference on Noise and Fluctuations (ICNF), Oct 2023, Grenoble, France. pp.1-4, ⟨10.1109/ICNF57520.2023.10472759⟩

Communication dans un congrès hal-04742976v2
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Applicability of the Carrier Number Fluctuations Model for Random Telegraph Noise of Nanoscale MOSFETs Operating in Saturation

Owen Gauthier , Sébastien Haendler , Quentin Rafhay , Christoforos Theodorou

2023 International Conference on Noise and Fluctuations (ICNF), Oct 2023, Grenoble, France. pp.1-4, ⟨10.1109/ICNF57520.2023.10472748⟩

Communication dans un congrès hal-04742951v1
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Variability of Trap-induced Mobility Fluctuations in Nanoscale Bulk and FD-SOI MOSFETs

Owen Gauthier , S. Haendler , Quentin Rafhay , Christoforos Theodorou

2023 International Electron Devices Meeting (IEDM), Dec 2023, San Francisco, United States. pp.1-4, ⟨10.1109/IEDM45741.2023.10413836⟩

Communication dans un congrès hal-04742936v1
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Static and LFN/RTN Local and Global Variability Analysis Using an Addressable Array Test Structure

Owen Gauthier , Sébastien Haendler , Ronan Beucher , Patrick Scheer , Quentin Rafhay et al.

2023 35th International Conference on Microelectronic Test Structure (ICMTS), Mar 2023, Tokyo, Japan. pp.1-6, ⟨10.1109/ICMTS55420.2023.10094087⟩

Communication dans un congrès hal-04305404v1

High temperature stability embedded ReRAM for 2x nm node and beyond

G. Molas , G. Piccolboni , A. Bricalli , A. Verdy , I. Naot et al.

2022 IEEE International Memory Workshop (IMW), May 2022, Dresden, France. pp.1-4, ⟨10.1109/IMW52921.2022.9779293⟩

Communication dans un congrès hal-03840618v1
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Simulation Study of the Origin of Ge High Speed Photodetector Degradation

B. Arunachalam , Jean-Emmanuel Broquin , Quentin Rafhay , D. Roy , Anne Kaminski

2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, France. pp.1-4, ⟨10.1109/IRPS46558.2021.9405211⟩

Communication dans un congrès hal-04742858v1

Insight in the resistance-change mechanisms in lanthanum nickelate memristors by a combination of diffraction and operando spectroscopic measurements

Klaasjan Maas , Benjamin Meunier , G. R. Castro , J. Rubio-Zuazo , Laetitia Rapenne et al.

E-MRS, May 2020, Strasbourg, France

Communication dans un congrès hal-04509857v1

Nickel-based CMOS-compatible contacts on p-In 0.53 Ga 0.47 As for III-V / silicon hybrid lasers

F. Boyer , K. Dabertrand , P. Gergaud , N. Coudurier , F. Nemouchi et al.

2020 IEEE International Interconnect Technology Conference (IITC), Oct 2020, San Jose, France. pp.121-123, ⟨10.1109/IITC47697.2020.9515625⟩

Communication dans un congrès hal-04742876v1

Ex-situ Hydrogenation of Sputtered Transparent Conductive Oxide layers by Plasma Immersion Ion Implantation

Charles Seron , Thibaut Desrues , Camille Oliveau , Quentin Rafhay , Frank Torregrosa et al.

2020 IEEE 47th Photovoltaic Specialists Conference (PVSC), Jun 2020, Calgary, France. pp.1304-1307, ⟨10.1109/PVSC45281.2020.9300693⟩

Communication dans un congrès hal-04743034v1

Device in operation: microscopic aspects behind the resistance-change mechanism in lanthanum nickelate memristors

Klassjan Maas , Eduardo Salas-Colera , Juan Rubio-Zuazo , German R. Castro , Edouard Villepreux et al.

SpLine Users’ meeting 2019, May 2019, Madrid, Spain

Communication dans un congrès hal-04884306v1

Tunable bipolar resistive switching in TiN/LaMnO3+δ/Pt heterostructures

Raquel Rodriguez-Lamas , Dolors Pla , Odette Chaix-Pluchery , Laetitia Rapenne , Hervé Roussel et al.

E-MRS 2019 Fall Meeting, Sep 2019, Varsovie, Poland

Communication dans un congrès hal-04884081v1

Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration

Antoine Veau , Thibaut Desrues , Audrey Morisset , Frank Torregrosa , Laurent Roux et al.

15th International Conference on Concentrator Photovoltaic Systems (CPV-15), Oct 2019, Fes, France. pp.040021, ⟨10.1063/1.5123848⟩

Communication dans un congrès hal-04743133v1

Memristive LaMnO3-based heterostructures for new valence change memories

Raquel Rodriguez-Lamas , Dolors Pla , Odette Chaix-Pluchery , Laetitia Rapenne , Hervé Roussel et al.

F2cΠ2 Joint Conference, Jul 2019, Lausanne, Switzerland

Communication dans un congrès hal-04884201v1

Characterization and Modelling of High Speed Ge Photodetectors Reliability

F. Sy , Q. Rafhay , J. Poëtte , G. Grosa , C. Besset et al.

2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.1-5, ⟨10.1109/IRPS.2019.8720483⟩

Communication dans un congrès hal-02274432v1

Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs Ohmic Contacts for Hybrid III-V / Si Lasers

F. Boyer , C. Jany , J. da Fonseca , B. Szelag , V. Amalberg et al.

2019 IEEE 16th International Conference on Group IV Photonics (GFP), Aug 2019, Singapore, Singapore. pp.1-2, ⟨10.1109/GROUP4.2019.8926115⟩

Communication dans un congrès hal-04743098v1

Tuning the performance of LaMnO3+d-based heterostructures for valence change memories

Raquel Rodriguez-Lamas , Dolors Pla , Odette Chaix-Pluchery , Hervé Roussel , Laetitia Rapenne et al.

22nd International Conference on Solid State Ionics (SSI-22), Jun 2019, PyeongChang, South Korea

Communication dans un congrès hal-02112219v1

How to tune the memristance of nickelate nanoionic devices by playing with their oxygen content

Klaasjan Maas , Edouard Villepreux , Laetitia Rapenne , Eduardo Salas-Colera , David Cooper et al.

E-MRS 2019 Fall Meeting, Sep 2019, Varsovie, Poland

Communication dans un congrès hal-04827721v1

La2NiO4+δ: a mixed ionic-electronic conductor for analog redox-based memory devices

Klassjan Maas , Edouard Villepreux , David Cooper , Quentin Rafhay , Xavier Mescot et al.

SSI-22 International Conference on Solid State Ionics, Jun 2019, Pyeongchang, South Korea

Communication dans un congrès hal-04884238v1

Using a mixed conducting oxide to build an analog memory device with neuromorphic programming capabilities

Klaasjan Maas , Edouard Villepreux , David Cooper , Quentin Rafhay , Xavier Mescot et al.

F2cΠ2 Joint Conference, Jul 2019, Lausanne, Switzerland

Communication dans un congrès hal-04884142v1

Development of the Doping of ZnO Nanowires Using Metal (III) Elements in Aqueous Solution

P. Gaffuri , E. Appert , C. Verrier , O. Chaix-Pluchery , L. Rapenne et al.

Journées de la Matière Condensée (JMC 2018), SFP, Aug 2018, Grenoble, France

Communication dans un congrès hal-01979218v1

Statistical analysis of CBRAM endurance

D. Alfaro Robayo , C. Nail , G. Sassine , J. F Nodin , M. C. Bernard et al.

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. pp.115-116, ⟨10.1109/VLSI-TSA.2018.8403856⟩

Communication dans un congrès hal-02050364v1

Monitoring the Morphology and Doping of ZnO Nanowires by Chemical Bath Deposition Using Metal Nitrate

Pierre Gaffuri , E. Appert , C. Verrier , O. Chaix-Pluchery , L. Rapenne et al.

2018 E-MRS Fall Meeting, Sep 2018, Warsaw, Poland

Communication dans un congrès hal-01981253v1

Opto-electrical simulation of III-V nanowire based tandem solar cells on Si

Vladimir Maryasin , Quentin Rafhay , D. Bucci , Jérôme Michallon , Anne Kaminski-Cachopo

SiliconPV 2018: 8th International Conference on Silicon Photovoltaics, Mar 2018, Lausanne, Switzerland. pp.120001, ⟨10.1063/1.5049318⟩

Communication dans un congrès hal-01959085v1

LaNiO3 thin films: influence of the deposition technique and growth parameters on the film quality

Klaasjan Maas , Michel Boudard , Quentin Rafhay , Carmen Jimenez , Laetitia Rapenne et al.

2018 E-MRS Spring Meeting, Jun 2018, Strasbourg, France

Communication dans un congrès hal-01981257v1

Plasma immersion ion implantation (PIII): New path for optimizing doping profiles of advanced phosphorus emitters

Antoine Veau , Thibaut Desrues , Adeline Lanterne , Pierre Bellanger , Frank Torregrosa et al.

SiliconPV 2018: 8th International Conference on Silicon Photovoltaics, Mar 2018, Lausanne, Switzerland. pp.110007, ⟨10.1063/1.5049316⟩

Communication dans un congrès hal-01959074v1

Resistive Switching in LaMnO3+d-based heterostructures

Dolors Pla , Raquel Rodriguez-Lamas , Benjamin Meunier , Odette Chaix-Pluchery , Michel Boudard et al.

2018 E-MRS Spring Meeting, symposium R: Solid State Ionics, A. Tarancon, D.S.Mebane, M. Burriel and R. Dittmann, Jun 2018, Strasbourg, France

Communication dans un congrès hal-01981232v1

Experimental and theoretical investigation of RRAM endurance statistical behavior

D. Alfaro Robayo , G. Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas et al.

49th IEEE Semiconductor Interface Specialists Conference (SISC), IEEE, Dec 2018, San Diego, United States. pp.13.2

Communication dans un congrès hal-02052290v1

Resistive switching of nanoengineered LaMnO3 thin films for ReRAM applications

Dolors Pla , K. Maas , S. Bagdzevicius , H. Roussel , O. Chaix et al.

2017 MRS Spring Meeting & Exhibit: Symposium ED7 Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power, A. Kummel, A. Demkov, J. Robertson, S. Tachigi, Apr 2017, Phoenix, United States

Communication dans un congrès hal-02016912v1

Towards 500°C SPER activated devices for 3D sequential integration

J. Micout , B. Sklenard , P. Batude , Rémy Berthelon , Quentin Rafhay et al.

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, CA, United States. pp.24.3, ⟨10.1109/S3S.2017.8309220⟩

Communication dans un congrès hal-01959113v1

Tunable Morphology and pH–Dependent Doping of ZnO Nanowires by Chemical Bath Deposition Using Aluminium Nitrate

Claire Verrier , Estelle Appert , Odette Chaix-Pluchery , Laetitia Rapenne , Quentin Rafhay et al.

2017 MRS Fall Meeting & Exhibit: symposium NM03 : Progress in Developing and Applications of Functional One-Dimensional Nanostructures rphic Engineering and Brain-Inspired Computing, J. Beltran-Huarac, W. Jadwisienczak, A. Ponti, B. Zou, Nov 2017, Boston, United States

Communication dans un congrès hal-02066510v1

La2NiO4+δ -based memristive devices: Role of the electrodes and oxygen stoichiometry tuning

K. Maas , Q. Rafhay , M. Boudard , H. Roussel , Carmen Jiménez et al.

2017 MRS Fall Meeting & Exhibit: Symposium EM05: Oxide Interfaces - Lattice and Electronic Defect Interactions, E. Dickey, U. Aschauer, N. Benedek, S. Hirose, Nov 2017, Boston, United States

Communication dans un congrès hal-02016908v1

Role of the electrodes on the electrical characteristics of La2NiO4-based memristive devices

Klassjan Maas , Michel Boudard , J.M. Caicedo , Carmen Jiménez , Sarunas Bagdzevicius et al.

21st International Conference on Solid State Ionics (SSI 2017), Jun 2017, Padua, Italy

Communication dans un congrès hal-02016899v1

Tunable morphology and pH-dependent doping of ZnO nanowires grown by chemical bath deposition

Claire Verrier , Estelle Appert , O. Chaix-Pluchery , Laëtitia Rapenne , Georges Bremond et al.

Journées Nationales des Nanofils Semiconducteurs, J2N, Nov 2017, Grenoble, France

Communication dans un congrès hal-02071024v1

How do the electrodes affect the electrical response of a M/La2NiO4/M memristive device?

Klaasjan Maas , Dolors Pla , Sarunas Bagdzevicius , Michel Boudard , Q. Rafhay et al.

2017 MRS Spring Meeting & Exhibit: Symposium ED7: Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power, A. Kummel, A. Demkov, J. Robertson, S. Takagi, Apr 2017, Phoenix, United States

Communication dans un congrès hal-02016920v1
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Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices

Jessy Micout , Quentin Rafhay , Xavier Garros , Mikael Cassé , Jean Coignus et al.

2017 ESSDERC - 47th European Solid-State Device Research Conference, Sep 2017, Leuven, Belgium. pp.144-147, ⟨10.1109/ESSDERC.2017.8066612⟩

Communication dans un congrès cea-01525266v1

(Invited) Understanding Resistive Switching in Manganite-based Memristive Devices

Mónica Burriel , Dolors Pla , Odette Chaix-Pluchery , Raquel Rodriguez-Lamas , Michel Boudard et al.

232nd ECS MEETING: Symposium on Oxide Memristors, J. Rupp, J. Nicholas, J.J. Yang, S. Nonnenmann, Oct 2017, Washington DC, United States

Communication dans un congrès hal-02066346v1

LaMnO3+δ as a functional material for next generation memristive devices

Dolors Pla , Quentin Rafhay , Odette Chaix-Pluchery , Raquel Rodriguez-Lamas , Xavier Mescot et al.

2017 MRS Fall Meeting & Exhibit: symposium EM07 -Materials, Devices and Architectures for Neuromorphic Engineering and Brain-Inspired Computing, S. Kim, B. De Salvo, H. Hwang, S. Yu, Nov 2017, Boston, United States

Communication dans un congrès hal-02016913v1

High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration

J. Micout , V. Lapras , P. Batude , C. Fenouillet-Beranger , J. Lacord et al.

2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4, ⟨10.1109/IEDM.2017.8268484⟩

Communication dans un congrès hal-01959097v1

Cellules photovoltaïques à base de nanofils

Anne Kaminski , Davide Bucci , Quentin Rafhay , Claire Verrier , Vladimir Maryasin et al.

Journées Energie du Labex LANEF: Photovoltaïque: couches minces et concepts avancés, May 2017, Grenoble, France

Communication dans un congrès hal-02078057v1

ZnO Nanocomposite-Based Dye Sensitive Solar Cells

Claire Verrier , Romain Parize , Estelle Appert , Quentin Rafhay , Vincent Consonni et al.

Journées Énergie du Labex LANEF. Photovoltaïque: Couches MInces & Concepts avancés., R. André, V. Consonni, L. Grenet, J.P. Travers, May 2017, Grenoble, France

Communication dans un congrès hal-02072369v1

HETONAN project: high efficiency tandem solar cells based on III-V nanowires on silicon

Alain Fave , Marco Vettori , Céline Chevalier , Nicolas Chauvin , Philippe Regreny et al.

Journées Nationales des Nanofils Semiconducteurs (J2N 2017), Nov 2017, Grenoble, France

Communication dans un congrès hal-02071013v1

Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology

Jean-Baptiste Henry , Antoine Cros , Julien Rosa , Quentin Rafhay , Gérard Ghibaudo

2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.68-72, ⟨10.1109/ICMTS.2017.7954269⟩

Communication dans un congrès hal-01959125v1

Optimization of ZnO nanocomopsites for dye-sensitized solar cells

C. Verrier , Romain Parize , E. Appert , Q. Rafhay , Vincent Consonni et al.

2016 E-MRS Fall Meeting: Symposium R: Organic solar cells including polymers, dyes or perovskites, A. Iwan, F. Caballero Briones, M. Petrus, T. Fukuda, Sep 2016, Varsaw, Poland

Communication dans un congrès hal-02072280v1

Optical simulation of absorption in tandem solar cells based on III-V nanowires on silicon

Anne Kaminski-Cachopo , V. Maryasin , D. Bucci , J. Michallon , A. Benali et al.

7th Photovoltaic Technical Conference (PVTC 2016), May 2016, Marseille, France

Communication dans un congrès hal-01489057v1

Opto-electrical simulations of tandem solar cells based on III-V nanowires on silicon substrate

Vladimir Maryasin , Q. Rafhay , Davide Bucci , Jérôme Michallon , Federico Panicco et al.

2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications, A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland

Communication dans un congrès hal-02072267v1

Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath Deposition

C. Verrier , E. Appert , O. Chaix-Pluchery , L. Rapenne , Q. Rafhay et al.

Atelier National Nanofils Semiconducteurs 2016, Jun 2016, Meudon, France

Communication dans un congrès hal-02016935v1

High performance CMOS FDSOI devices activated at low temperature

L. Pasini , P. Batude , J. Lacord , M. Cassé , B. Mathieu et al.

2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩

Communication dans un congrès hal-01730659v1

Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath Deposition

C. Verrier , E. Appert , O. Chaix-Pluchery , L. Rapenne , Fares Chouchane et al.

2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications, A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland

Communication dans un congrès hal-02016936v1

New access resistance extraction methodology for 14nm FD-SOI technology

Jean-Baptiste Henry , Antoine Cros , Julien Rosa , Quentin Rafhay , Gérard Ghibaudo

2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, Japan. pp.70-75, ⟨10.1109/ICMTS.2016.7476177⟩

Communication dans un congrès hal-01959130v1

Impact of short-channel effects on velocity overshoot in MOSFET

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo

2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), Jun 2015, Grenoble, France. pp.521-524, ⟨10.1109/NEWCAS.2015.7182061⟩

Communication dans un congrès hal-02049733v1

Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

Clement Nguyen , Carlo Cagli , Elisa Vianello , Alain Persico , Gabriel Molas et al.

2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, CA, United States. pp.17-20, ⟨10.1109/IIRW.2015.7437059⟩

Communication dans un congrès hal-01959140v1

Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network

Daniele Garbin , Quentin Rafhay , Elisa Vianello , Simon Jeannot , Philippe Candelier et al.

2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.125, ⟨10.1109/ULIS.2015.7063789⟩

Communication dans un congrès hal-01959186v1

On the impact of OxRAM-based synapses variability on convolutional neural networks performance

D. Garbin , E. Vianello , O. Bichler , M. Azzaz , Q. Rafhay et al.

2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15), Jul 2015, Boston, MA, United States. pp.193-198, ⟨10.1109/NANOARCH.2015.7180611⟩

Communication dans un congrès cea-01839851v1

Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR

Gaspard Hiblot , Quentin Rafhay , Loic Gaben , Gérard Ghibaudo , Frédéric Boeuf

2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.242-245, ⟨10.1109/ESSDERC.2015.7324759⟩

Communication dans un congrès hal-01959154v1

CMOS roadmap analysis from the perspective of III-V technology using MASTAR

Gaspard Hiblot , Quentin Rafhay , Gabriel Mugny , Gérard Ghibaudo , Frédéric Boeuf

2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.115-116

Communication dans un congrès hal-02049782v1

Optical absorption and physical properties of ZnO/CdTe core shell nanowire arrays for solar cells

Jerôme Michallon , Jerôme Garnier , S. Renet , D. Bucci , Laetitia Rapenne et al.

2014 E-MRS Fall Meeting, Sep 2014, Varsaw, Poland

Communication dans un congrès hal-02016994v1

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo

2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.286-289, ⟨10.1109/ESSDERC.2014.6948816⟩

Communication dans un congrès hal-01959276v1

Toward an efficient extremely thin absorber solar cell based on ZnO nanowire arrays

Jérôme Michallon , Mehdi Daanoune , Federico Passerini , Davide Bucci , Jérome Garnier et al.

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), Jun 2014, Denver, United States. pp.1084-1088, ⟨10.1109/PVSC.2014.6925103⟩

Communication dans un congrès hal-01959286v1

Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses

D. Garbin , O. Bichler , E. Vianello , Q. Rafhay , C. Gamrat et al.

2014 IEEE International Electron Devices Meeting, Dec 2014, San Francisco, United States. pp.28.4.1-28.4.4, ⟨10.1109/IEDM.2014.7047126⟩

Communication dans un congrès cea-01839848v1

Modeling of the impact of source/drain regions on short channel effects in MOSFETs

Dutta T. , Quentin Rafhay , Pananakakis G. , Gérard Ghibaudo

14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523493⟩

Communication dans un congrès hal-01181252v1

New parameter extraction method based on split C-V for FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Quentin Rafhay et al.

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2012, Bordeaux, France. ⟨10.1109/ESSDERC.2012.6343372⟩

Communication dans un congrès hal-01959345v1

Origins of the short channel effects increase in III-V nMOSFET technologies

T. Dutta , Quentin Rafhay , R. Clerc , J. Lacord , S. Monfray et al.

2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France

Communication dans un congrès hal-01959380v1

FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)

B. Sklenard , C. Xu , P. Batude , B. Previtali , C. Tabone et al.

2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France. ⟨10.1109/ULIS.2012.6193384⟩

Communication dans un congrès hal-01959376v1
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Réalisation et caractérisation de cellules photovoltaïques

Anne Kaminski-Cachopo , Delphine Constantin , Loïc Vincent , Quentin Rafhay , Ahmad Bsiesy

12es Journées Pédagogiques du CNFM, Nov 2012, Saint-Malo, France. pp.59-64

Communication dans un congrès hal-00807271v1

Improved extraction of GIDL in FDSOI devices for proper junction quality analysis

C. Xu , P. Batude , K. Romanjek , C. Le Royer , C. Tabone et al.

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2011, Helsinki, Finland. ⟨10.1109/ESSDERC.2011.6044183⟩

Communication dans un congrès hal-01959402v1

Characterization and modelling of gate current injection in embedded non-volatile flash memory

Alban Zaka , Davide Garetto , Denis Rideau , Pierpaolo Palestri , Jean-Philippe Manceau et al.

2011 IEEE ICMTS International Conference on Microelectronic Test Structures, Apr 2011, Amsterdam, Netherlands. ⟨10.1109/ICMTS.2011.5976874⟩

Communication dans un congrès hal-01959411v1

Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS Capacitors

Q. Rafhay , R. Clerc , J. Coignus , G. Pananakakis , G. Ghibaudo

Int. Conference on Ultimate Integration of Silicon, Mar 2010, Glasgow, UK, United Kingdom

Communication dans un congrès hal-00604652v1

Programming efficiency and drain disturb trade-off in embedded Non Volatile Memories

A. Zaka , P. Palestri , D. Rideau , M. Iellina , E. Dornel et al.

14th International Workshop on Computational Electronics,, Oct 2010, Pisa, Italy

Communication dans un congrès hal-00604566v1

Mise en place d'un TP de simulation, élaboration et caractérisation d'une cellule photovoltaïque de première génération.

C. Ternon , D. Constantin , A. Kaminski , L. Claudon , F. Volpi et al.

11èmes Journée Pédagogiques du CNFM, Nov 2010, saint malo, France. p. 137-142 ISBN 2-9522395-3-3

Communication dans un congrès hal-00807396v1

Improvements in low temperature (<625°C) FDSOI devices down to 30nm gate length

C. Xu , P. Batude , M. Vinet , M. Mouis , M. Cassé et al.

2012 VLSI Technology, System and Application, Apr 2010, Hsinchu, Taiwan. ⟨10.1109/VLSI-TSA.2012.6210171⟩

Communication dans un congrès hal-01959359v1

Etat de l'art de la compréhension du transport quasi ballistique dans les composants MOS avancés

R. Clerc , Q. Rafhay , G. Ghibaudo

GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France

Communication dans un congrès hal-00604961v1

On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices

A. Zaka , Q. Rafhay , P. Palestri , R. Clerc , D. Rideau et al.

International Semiconductor Device Research Symposium, Dec 2009, Washington, DC, United States

Communication dans un congrès hal-00603838v1

Embedded non-volatile memory study with surface potential based model

D. Garetto , A. Zaka , V. Quenette , D. Rideau , E. Dornel et al.

NSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009), May 2009, Ston, United States. pp.554-557

Communication dans un congrès hal-00604191v1

Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials

Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo

4th EUROSOI Workshop, Jan 2008, EUROSOI, France. pp.43-44

Communication dans un congrès hal-00391957v1

Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials

Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo

2008 International Conference on Solid State Devices and Materials, Sep 2008, -, France

Communication dans un congrès hal-00391924v1

Perspectives du Formalisme Dérive Diffusion en Régime Quasi Ballistique pour la Modélisation Analytique des Composants MOS

R. Clerc , P. Palestri , M. Ferrier , Q. Rafhay , G. Pananakakis et al.

GDR Nano, Journées " Simulation et Caractérisation ", 2006, GRENOBLE, France. pp.XX

Communication dans un congrès hal-00148261v1
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Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability

Lucas Reganaz , Damien Deleruyelle , Quentin Rafhay , Joel Minguet Lopez , Niccolo Castellani et al.

IRPS 2023 (IEEE International Reliability Physics Symposium), Mar 2023, Monterey, Californie, United States. 2023, ⟨10.1109/IRPS48203.2023.10117882⟩

Poster de conférence cea-04169237v1

Functionalized Oxides for Bifacial Solar Cells with Passivated Contacts: First Results of the OXYGEN Project

Thibaut Desrues , Audrey Morisset , Elise Bruhat , A. Veau , M. Hayes et al.

36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2019), Sep 2019, Marseille, France

Poster de conférence hal-02344046v1

TEM studies of textured La2NiO4+δ thin films, a Mixed Ionic-Electronic conductor for resistive memory applications

Laetitia Rapenne , Klaasjan Maas , Michel Boudard , Quentin Rafhay , Carmen Jiménez et al.

XVIe colloque de la Société Française des Microscopies, Jul 2019, Poitiers, France

Poster de conférence hal-04589357v1

Light trapping and physical properties of ZnO / CdTe core shell nanowire arrays for solar cells

Vincent Consonni , Jerome Michallon , Sebastien Renet , Davide Bucci , Laetitia Rapenne et al.

MRS-Fall meeting, 2014, Boston, United States

Poster de conférence hal-02918370v1

Optical absorption and transport mechanisms in ZnO nanowire-based ETA solar cells

Jerome Michallon , Davide Bucci , Quentin Rafhay , Vincent Consonni , Anne Kaminski

EMRS2014-fall meeting, 2014, Warsaw, Poland

Poster de conférence hal-02918362v1

Semi-analytic Modeling for Hot Carriers in Electron Devices

Alban Zaka , Pierpaolo Palestri , Quentin Rafhay , Raphael Clerc , Denis Rideau et al.

Ed. by T. Grasser. Hot Carrier Degradation in Semiconductor Devices, Springer International Publishing, pp.151-196, 2015, 978-3-319-08993-5, 978-3-319-08994-2. ⟨10.1007/978-3-319-08994-2⟩

Chapitre d'ouvrage hal-01959239v1

Electron and Hole Mobility in Semiconductor Devices

Quentin Rafhay , Gérard Ghibaudo

Ed. by J.G. Webster. Wiley Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons, Inc., 2014, ⟨10.1002/047134608X.W3148.pub2⟩

Chapitre d'ouvrage hal-01959198v1

Modeling of End of the Roadmap nMOSFET with Alternative Channel Material

Quentin Rafhay , R. Clerc , G. Ghibaudo , P. Palestri , L. Selmi

Nanoscale CMOS: Innovative Materials, Modeling and Characterization, John Wiley & Sons, Inc., pp.287-334, 2013

Chapitre d'ouvrage hal-01959425v1
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Modelling of nano nMOSFETs with alternative channel materials in the fully and quasi ballistic regimes

Quentin Rafhay

Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2008. Français. ⟨NNT : ⟩

Thèse tel-00398674v1