Quentin Rafhay
Publications
Publications
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Experimental Evidence of Light Source Contribution in the Noise of Optoelectronic Devices Under Illumination2023 International Conference on Noise and Fluctuations (ICNF), Oct 2023, Grenoble, France. pp.1-4, ⟨10.1109/ICNF57520.2023.10472759⟩ |
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Applicability of the Carrier Number Fluctuations Model for Random Telegraph Noise of Nanoscale MOSFETs Operating in Saturation2023 International Conference on Noise and Fluctuations (ICNF), Oct 2023, Grenoble, France. pp.1-4, ⟨10.1109/ICNF57520.2023.10472748⟩ |
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Variability of Trap-induced Mobility Fluctuations in Nanoscale Bulk and FD-SOI MOSFETs2023 International Electron Devices Meeting (IEDM), Dec 2023, San Francisco, United States. pp.1-4, ⟨10.1109/IEDM45741.2023.10413836⟩ |
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Static and LFN/RTN Local and Global Variability Analysis Using an Addressable Array Test Structure2023 35th International Conference on Microelectronic Test Structure (ICMTS), Mar 2023, Tokyo, Japan. pp.1-6, ⟨10.1109/ICMTS55420.2023.10094087⟩ |
High temperature stability embedded ReRAM for 2x nm node and beyond2022 IEEE International Memory Workshop (IMW), May 2022, Dresden, France. pp.1-4, ⟨10.1109/IMW52921.2022.9779293⟩ |
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Simulation Study of the Origin of Ge High Speed Photodetector Degradation2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, France. pp.1-4, ⟨10.1109/IRPS46558.2021.9405211⟩ |
Insight in the resistance-change mechanisms in lanthanum nickelate memristors by a combination of diffraction and operando spectroscopic measurementsE-MRS, May 2020, Strasbourg, France |
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Nickel-based CMOS-compatible contacts on p-In 0.53 Ga 0.47 As for III-V / silicon hybrid lasers2020 IEEE International Interconnect Technology Conference (IITC), Oct 2020, San Jose, France. pp.121-123, ⟨10.1109/IITC47697.2020.9515625⟩ |
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Ex-situ Hydrogenation of Sputtered Transparent Conductive Oxide layers by Plasma Immersion Ion Implantation2020 IEEE 47th Photovoltaic Specialists Conference (PVSC), Jun 2020, Calgary, France. pp.1304-1307, ⟨10.1109/PVSC45281.2020.9300693⟩ |
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Device in operation: microscopic aspects behind the resistance-change mechanism in lanthanum nickelate memristorsSpLine Users’ meeting 2019, May 2019, Madrid, Spain |
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Tunable bipolar resistive switching in TiN/LaMnO3+δ/Pt heterostructuresE-MRS 2019 Fall Meeting, Sep 2019, Varsovie, Poland |
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Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration15th International Conference on Concentrator Photovoltaic Systems (CPV-15), Oct 2019, Fes, France. pp.040021, ⟨10.1063/1.5123848⟩ |
Memristive LaMnO3-based heterostructures for new valence change memoriesF2cΠ2 Joint Conference, Jul 2019, Lausanne, Switzerland |
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Characterization and Modelling of High Speed Ge Photodetectors Reliability2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.1-5, ⟨10.1109/IRPS.2019.8720483⟩ |
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Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs Ohmic Contacts for Hybrid III-V / Si Lasers2019 IEEE 16th International Conference on Group IV Photonics (GFP), Aug 2019, Singapore, Singapore. pp.1-2, ⟨10.1109/GROUP4.2019.8926115⟩ |
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Tuning the performance of LaMnO3+d-based heterostructures for valence change memories22nd International Conference on Solid State Ionics (SSI-22), Jun 2019, PyeongChang, South Korea |
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How to tune the memristance of nickelate nanoionic devices by playing with their oxygen contentE-MRS 2019 Fall Meeting, Sep 2019, Varsovie, Poland |
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La2NiO4+δ: a mixed ionic-electronic conductor for analog redox-based memory devicesSSI-22 International Conference on Solid State Ionics, Jun 2019, Pyeongchang, South Korea |
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Using a mixed conducting oxide to build an analog memory device with neuromorphic programming capabilitiesF2cΠ2 Joint Conference, Jul 2019, Lausanne, Switzerland |
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Development of the Doping of ZnO Nanowires Using Metal (III) Elements in Aqueous SolutionJournées de la Matière Condensée (JMC 2018), SFP, Aug 2018, Grenoble, France |
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Statistical analysis of CBRAM endurance2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. pp.115-116, ⟨10.1109/VLSI-TSA.2018.8403856⟩ |
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Monitoring the Morphology and Doping of ZnO Nanowires by Chemical Bath Deposition Using Metal Nitrate2018 E-MRS Fall Meeting, Sep 2018, Warsaw, Poland |
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Opto-electrical simulation of III-V nanowire based tandem solar cells on SiSiliconPV 2018: 8th International Conference on Silicon Photovoltaics, Mar 2018, Lausanne, Switzerland. pp.120001, ⟨10.1063/1.5049318⟩ |
LaNiO3 thin films: influence of the deposition technique and growth parameters on the film quality2018 E-MRS Spring Meeting, Jun 2018, Strasbourg, France |
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Plasma immersion ion implantation (PIII): New path for optimizing doping profiles of advanced phosphorus emittersSiliconPV 2018: 8th International Conference on Silicon Photovoltaics, Mar 2018, Lausanne, Switzerland. pp.110007, ⟨10.1063/1.5049316⟩ |
Resistive Switching in LaMnO3+d-based heterostructures2018 E-MRS Spring Meeting, symposium R: Solid State Ionics, A. Tarancon, D.S.Mebane, M. Burriel and R. Dittmann, Jun 2018, Strasbourg, France |
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Experimental and theoretical investigation of RRAM endurance statistical behavior49th IEEE Semiconductor Interface Specialists Conference (SISC), IEEE, Dec 2018, San Diego, United States. pp.13.2 |
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Resistive switching of nanoengineered LaMnO3 thin films for ReRAM applications2017 MRS Spring Meeting & Exhibit: Symposium ED7 Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power, A. Kummel, A. Demkov, J. Robertson, S. Tachigi, Apr 2017, Phoenix, United States |
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Towards 500°C SPER activated devices for 3D sequential integration2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, CA, United States. pp.24.3, ⟨10.1109/S3S.2017.8309220⟩ |
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Tunable Morphology and pH–Dependent Doping of ZnO Nanowires by Chemical Bath Deposition Using Aluminium Nitrate2017 MRS Fall Meeting & Exhibit: symposium NM03 : Progress in Developing and Applications of Functional One-Dimensional Nanostructures rphic Engineering and Brain-Inspired Computing, J. Beltran-Huarac, W. Jadwisienczak, A. Ponti, B. Zou, Nov 2017, Boston, United States |
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La2NiO4+δ -based memristive devices: Role of the electrodes and oxygen stoichiometry tuning2017 MRS Fall Meeting & Exhibit: Symposium EM05: Oxide Interfaces - Lattice and Electronic Defect Interactions, E. Dickey, U. Aschauer, N. Benedek, S. Hirose, Nov 2017, Boston, United States |
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Role of the electrodes on the electrical characteristics of La2NiO4-based memristive devices21st International Conference on Solid State Ionics (SSI 2017), Jun 2017, Padua, Italy |
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Tunable morphology and pH-dependent doping of ZnO nanowires grown by chemical bath depositionJournées Nationales des Nanofils Semiconducteurs, J2N, Nov 2017, Grenoble, France |
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How do the electrodes affect the electrical response of a M/La2NiO4/M memristive device?2017 MRS Spring Meeting & Exhibit: Symposium ED7: Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power, A. Kummel, A. Demkov, J. Robertson, S. Takagi, Apr 2017, Phoenix, United States |
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Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices2017 ESSDERC - 47th European Solid-State Device Research Conference, Sep 2017, Leuven, Belgium. pp.144-147, ⟨10.1109/ESSDERC.2017.8066612⟩ |
(Invited) Understanding Resistive Switching in Manganite-based Memristive Devices232nd ECS MEETING: Symposium on Oxide Memristors, J. Rupp, J. Nicholas, J.J. Yang, S. Nonnenmann, Oct 2017, Washington DC, United States |
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LaMnO3+δ as a functional material for next generation memristive devices2017 MRS Fall Meeting & Exhibit: symposium EM07 -Materials, Devices and Architectures for Neuromorphic Engineering and Brain-Inspired Computing, S. Kim, B. De Salvo, H. Hwang, S. Yu, Nov 2017, Boston, United States |
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High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4, ⟨10.1109/IEDM.2017.8268484⟩ |
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Cellules photovoltaïques à base de nanofilsJournées Energie du Labex LANEF: Photovoltaïque: couches minces et concepts avancés, May 2017, Grenoble, France |
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ZnO Nanocomposite-Based Dye Sensitive Solar CellsJournées Énergie du Labex LANEF. Photovoltaïque: Couches MInces & Concepts avancés., R. André, V. Consonni, L. Grenet, J.P. Travers, May 2017, Grenoble, France |
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HETONAN project: high efficiency tandem solar cells based on III-V nanowires on siliconJournées Nationales des Nanofils Semiconducteurs (J2N 2017), Nov 2017, Grenoble, France |
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Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.68-72, ⟨10.1109/ICMTS.2017.7954269⟩ |
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Optimization of ZnO nanocomopsites for dye-sensitized solar cells2016 E-MRS Fall Meeting: Symposium R: Organic solar cells including polymers, dyes or perovskites, A. Iwan, F. Caballero Briones, M. Petrus, T. Fukuda, Sep 2016, Varsaw, Poland |
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Optical simulation of absorption in tandem solar cells based on III-V nanowires on silicon7th Photovoltaic Technical Conference (PVTC 2016), May 2016, Marseille, France |
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Opto-electrical simulations of tandem solar cells based on III-V nanowires on silicon substrate2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications, A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland |
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Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath DepositionAtelier National Nanofils Semiconducteurs 2016, Jun 2016, Meudon, France |
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High performance CMOS FDSOI devices activated at low temperature2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩ |
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Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath Deposition2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications, A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland |
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New access resistance extraction methodology for 14nm FD-SOI technology2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, Japan. pp.70-75, ⟨10.1109/ICMTS.2016.7476177⟩ |
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Impact of short-channel effects on velocity overshoot in MOSFET2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), Jun 2015, Grenoble, France. pp.521-524, ⟨10.1109/NEWCAS.2015.7182061⟩ |
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Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, CA, United States. pp.17-20, ⟨10.1109/IIRW.2015.7437059⟩ |
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Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.125, ⟨10.1109/ULIS.2015.7063789⟩ |
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On the impact of OxRAM-based synapses variability on convolutional neural networks performance2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15), Jul 2015, Boston, MA, United States. pp.193-198, ⟨10.1109/NANOARCH.2015.7180611⟩ |
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Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.242-245, ⟨10.1109/ESSDERC.2015.7324759⟩ |
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CMOS roadmap analysis from the perspective of III-V technology using MASTAR2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.115-116 |
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Optical absorption and physical properties of ZnO/CdTe core shell nanowire arrays for solar cells2014 E-MRS Fall Meeting, Sep 2014, Varsaw, Poland |
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Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.286-289, ⟨10.1109/ESSDERC.2014.6948816⟩ |
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Toward an efficient extremely thin absorber solar cell based on ZnO nanowire arrays2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), Jun 2014, Denver, United States. pp.1084-1088, ⟨10.1109/PVSC.2014.6925103⟩ |
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Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses2014 IEEE International Electron Devices Meeting, Dec 2014, San Francisco, United States. pp.28.4.1-28.4.4, ⟨10.1109/IEDM.2014.7047126⟩ |
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Modeling of the impact of source/drain regions on short channel effects in MOSFETs14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523493⟩ |
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New parameter extraction method based on split C-V for FDSOI MOSFETs2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2012, Bordeaux, France. ⟨10.1109/ESSDERC.2012.6343372⟩ |
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Origins of the short channel effects increase in III-V nMOSFET technologies2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France |
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FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France. ⟨10.1109/ULIS.2012.6193384⟩ |
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Réalisation et caractérisation de cellules photovoltaïques12es Journées Pédagogiques du CNFM, Nov 2012, Saint-Malo, France. pp.59-64 |
Improved extraction of GIDL in FDSOI devices for proper junction quality analysis2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2011, Helsinki, Finland. ⟨10.1109/ESSDERC.2011.6044183⟩ |
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Characterization and modelling of gate current injection in embedded non-volatile flash memory2011 IEEE ICMTS International Conference on Microelectronic Test Structures, Apr 2011, Amsterdam, Netherlands. ⟨10.1109/ICMTS.2011.5976874⟩ |
Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS CapacitorsInt. Conference on Ultimate Integration of Silicon, Mar 2010, Glasgow, UK, United Kingdom |
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Programming efficiency and drain disturb trade-off in embedded Non Volatile Memories14th International Workshop on Computational Electronics,, Oct 2010, Pisa, Italy |
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Mise en place d'un TP de simulation, élaboration et caractérisation d'une cellule photovoltaïque de première génération.11èmes Journée Pédagogiques du CNFM, Nov 2010, saint malo, France. p. 137-142 ISBN 2-9522395-3-3 |
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Improvements in low temperature (<625°C) FDSOI devices down to 30nm gate length2012 VLSI Technology, System and Application, Apr 2010, Hsinchu, Taiwan. ⟨10.1109/VLSI-TSA.2012.6210171⟩ |
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Etat de l'art de la compréhension du transport quasi ballistique dans les composants MOS avancésGDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France |
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On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale DevicesInternational Semiconductor Device Research Symposium, Dec 2009, Washington, DC, United States |
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Embedded non-volatile memory study with surface potential based modelNSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009), May 2009, Ston, United States. pp.554-557 |
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Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials4th EUROSOI Workshop, Jan 2008, EUROSOI, France. pp.43-44 |
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Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials2008 International Conference on Solid State Devices and Materials, Sep 2008, -, France |
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Perspectives du Formalisme Dérive Diffusion en Régime Quasi Ballistique pour la Modélisation Analytique des Composants MOSGDR Nano, Journées " Simulation et Caractérisation ", 2006, GRENOBLE, France. pp.XX |
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Semi-analytic Modeling for Hot Carriers in Electron DevicesEd. by T. Grasser. Hot Carrier Degradation in Semiconductor Devices, Springer International Publishing, pp.151-196, 2015, 978-3-319-08993-5, 978-3-319-08994-2. ⟨10.1007/978-3-319-08994-2⟩ |
Electron and Hole Mobility in Semiconductor DevicesEd. by J.G. Webster. Wiley Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons, Inc., 2014, ⟨10.1002/047134608X.W3148.pub2⟩ |
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Modeling of End of the Roadmap nMOSFET with Alternative Channel MaterialNanoscale CMOS: Innovative Materials, Modeling and Characterization, John Wiley & Sons, Inc., pp.287-334, 2013 |
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Simulation, élaboration et caractérisation de cellules photovoltaïques2014, pp.0011. ⟨10.1051/j3ea/2015013⟩ |
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Modelling of nano nMOSFETs with alternative channel materials in the fully and quasi ballistic regimesMicro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2008. Français. ⟨NNT : ⟩ |