Raphaël Lachaume
58
Documents
Publications
- 3
- 3
- 3
- 3
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 32
- 23
- 23
- 14
- 14
- 14
- 14
- 14
- 13
- 13
- 12
- 12
- 12
- 11
- 9
- 8
- 7
- 7
- 6
- 5
- 5
- 5
- 5
- 4
- 4
- 4
- 4
- 4
- 3
- 3
- 3
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 3
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 2
- 4
- 16
- 16
- 12
- 1
- 3
- 2
- 1
- 13
- 12
- 6
- 3
- 1
- 3
[Invited] 3D patterning of Si by contact etchning: contribution of the band bending modelingSemi-Conducteurs et Oxydes Poreux, 5ème journée (SCOPE 2019), Jun 2019, Thiais, France
Communication dans un congrès
hal-02418947v1
|
|
|
Elaboration of III-V top cell for tandem cell with Silicon2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Jun 2019, Chicago, United States. pp.1034-1038, ⟨10.1109/PVSC40753.2019.8980524⟩
Communication dans un congrès
hal-03084896v1
|
3D patterning of silicon with nanoporous goldPorous Semiconductors - Science and Technology Conference, Mar 2018, La Grande Motte, France
Communication dans un congrès
hal-02404199v1
|
|
|
Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applications2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), IEEE, Jun 2017, Washington, United States. ⟨10.1109/pvsc.2017.8366525⟩
Communication dans un congrès
hal-01579151v1
|
Low temperature plasma epitaxy of Silicon on III-V for tandem solar cellsInternational Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany
Communication dans un congrès
hal-01632964v1
|
|
Microstructuration of Silicon Surfaces Using Nanoporous Gold Electrodes21st Topical Meeting of the International Society of Electrochemistry, ISE, Apr 2017, Szeged, Hungary. pp.31375 - 31375
Communication dans un congrès
hal-01537684v1
|
|
Influence of electrical transport properties on performance of Si nanowire array solar cells assessed by optoelectrical modelingE-MRS 2017 Spring Meeting, May 2017, Strasbourg, France
Communication dans un congrès
hal-01632933v1
|
|
Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells13th International Conference on Concentrator Photovoltaic Systems (CPV 13), May 2017, Ottawa, Canada
Communication dans un congrès
hal-01632921v1
|
|
Gravure par contact du silicium à l’aide d’électrodes en or nanoporeuxSemiconduteur et oxyde poreux (SCOPE 2017), Jun 2017, Lille, France
Communication dans un congrès
hal-01580526v1
|
|
Characterization and modeling of group IV defects in MOS devicesCOST MultiScaleSolar workshop, Ruđer Bošković Institute, Oct 2016, Zagreb, Croatia
Communication dans un congrès
hal-01416380v1
|
|
Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem CellsJournées Nationales du Photovoltaïque (JNPV), Nov 2016, Dourdan, France
Communication dans un congrès
hal-01424644v1
|
|
Silicon heterojunctions and homo-heterojunctionsFrench-Russian Workshop: Beyond silicon : heterojunctions and multijunctions solar cells, Dec 2016, Gif-sur-Yvette, France
Communication dans un congrès
hal-01475783v1
|
|
Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etching11th INTERNATIONAL CONFERENCE ON SURFACE COATINGS AND NANOSTRUTURED MATERIALS (NANOSMAT), Sep 2016, Aveiro, Portugal
Communication dans un congrès
hal-01579534v1
|
|
Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etchingE-MRS fall meeting 2016, Materials Research Society, Sep 2016, Varsovie, Poland
Communication dans un congrès
hal-01579541v1
|
|
Homo-hétérojonction en silicium : une nouvelle architecture pour des cellules à rendement recordJournées Nationales du Photovoltaïque , Nov 2016, Dourdan, France
Communication dans un congrès
hal-01424637v1
|
|
Tunable Nanostructuration of Si by MACE with Pt nanoparticles under an applied external bias10th Conference of Porous Semiconductor Science and Technology (PSST) , Mar 2016, Tarragone, Spain
Communication dans un congrès
hal-01579288v1
|
|
Modelling of multijunction cellsFrench-Russian Workshop, Dec 2016, Gif-Sur-Yvette, France
Communication dans un congrès
hal-01416388v1
|
|
Interfaces in (p) a-Si:H/(n) c-Si heterojunctions: influence of (i) a-Si:H buffer layer and front electrode on capacitance-temperature dependencies and strong inversion layers26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany
Communication dans un congrès
hal-01232109v1
|
|
Realistic simulation of III-V/epi-SiGe tandem solar cellsCOST Multiscale solar Workshop, Nov 2015, Valencia, Spain
Communication dans un congrès
hal-01239075v1
|
|
|
Investigation of Hybrid Tunnel Junction Architectures for III-V/Si Tandem Solar Cells31st European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC 2015), Sep 2015, Hamburg, Germany. pp.75-79, ⟨10.4229/EUPVSEC20152015-1CO.10.4⟩
Communication dans un congrès
hal-01232634v1
|
Realistic modeling of tandem cells formed by low temperature PECVD epitaxy of silicon-germanium on gallium arsenideE-MRS Spring Meeting 2015, May 2015, Lille, France
Communication dans un congrès
hal-01232097v1
|
|
New insights into the modulated photocurrent technique using 2D full numerical simulations26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany
Communication dans un congrès
hal-01232105v1
|
|
SiGe Low Temperature Epitaxy by PECVD on III-V MOVPE Grown Material for High Efficiency Tandem Solar Cell Applications16th European Workshop on Metalorganic Vapour Phase Epitaxy, EWMOVPE XVI, Jun 2015, Lund, Sweden
Communication dans un congrès
hal-01232098v1
|
|
Towards realistic simulation of the novel III-V/epi-Si tandem solar cell conceptWorkshop Theory and Modeling for PV, IPVF, Nov 2015, Marseille, France
Communication dans un congrès
hal-01240827v1
|
|
Simulation électrique et optique de nanofils de Silicium en géométrie radiale pour des applications photovoltaïquesJournées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France
Communication dans un congrès
hal-01238536v1
|
|
New insights into the modulated photocurrent technique using 2D full numerical simulationsCOST Multiscale solar Workshop 2015, Nov 2015, Valencia, Spain
Communication dans un congrès
hal-01238544v1
|
|
Caractérisation du travail de sortie de l'ITO: apports de la microélectroniqueJNPV 2014, Dec 2014, Dourdan, France
Communication dans un congrès
hal-01104247v1
|
|
Influence of a-Si:H/ITO Interface Properties on Performance of Heterojunction Solar Cells3rd International Conference on Crystalline Silicon Photovoltaics, Mar 2013, Hamelin, Germany
Communication dans un congrès
hal-01240744v1
|
|
In-depth electrical and physical characterization of ITO electrodes for photovoltaic and display applications2012 IEEE 43rd Semiconductor Interface Specialists Conference (SISC), Dec 2012, San Diego, CA, United States
Communication dans un congrès
hal-01240788v1
|
|
Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling2012 13th International Conference on Ultimate Integration on Silicon (ULIS), IEEE, Mar 2012, Grenoble, France
Communication dans un congrès
hal-01240804v1
|