Raphael Sommet
- Systèmes RF (XLIM-SRF)
Domaines de recherche
Compétences
Publications
Publications
Using of the 2D materials signature for thermal Raman measurements of power devices18th European Advanced Technology Workshop on Micropackaging and Thermal management, IMAPS, Mar 2025, La Rochelle, France |
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Thermal analysis of a FO-WLP SiP with Integrated GaN Power Amplifier and GaAs Low Noise Amplifier18eme European Advanced Technology Workshop on Micropackaging and Thermal management, IMAPS, Mar 2025, La Rochelle (France), France |
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Multiscale thermal and thermomechanical analysis of a SiP using Fan Out Wafer Level Packaging (FO-WLP) technology18eme European Advanced Technology Workshop on Micropackaging and Thermal management, IMAPS, Mar 2025, La Rochelle, France |
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Estimation de l’énergie d’activation réelle sous champ nul d’un piège dans la zone tampon des transistors HEMT dopés FeJournées nationales microondes, Jun 2024, Antibes (France), France |
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Impact of GaN Cap Layer and Carbon-Doped Buffer Layer on Thermal Resistance of HEMTs GaN2024 30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2024, Toulouse, France. pp.1-4, ⟨10.1109/THERMINIC62015.2024.10732655⟩ |
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Multi-scale simulation of GaN power Amplifier in FanOut Wafer Level Packaging technology (FOWLP)17th European Advanced Technology Workshop ON MICROPACKAGING AND THERMAL MANAGEMENT, IMAPS France, Jan 2024, La Rochelle, France |
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Modélisation cohérente d'un HEMT AlGaN/GaN de 0.15μm basés sur l'approche ASM-HEMT en prenant en compte la thermique et les piègesXXIII èmes Journées Nationales MicroOndes, Jun 2024, Antibes - Juan les Pins, France |
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Investigation of Thermal Resistance Extraction of GaN HEMTs through DCT Measurements Techniques and TCAD-Based Physical Simulations2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.178-181, ⟨10.23919/EuMIC61603.2024.10732560⟩ |
2D Materials for Raman Thermal Measurements on Power Electronics Devices2024 30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2024, Toulouse, France. pp.1-7, ⟨10.1109/THERMINIC62015.2024.10732675⟩ |
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Inspection of Trapping and Detrapping Dynamics in Fe-and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy8th IEEE Devices Technology and Manufaturing Conference (EDTM 2024), Mar 2024, Bengalore, India |
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Transient thermal simulation of a SiP FO-WLP embedding a GaN power amplifier2024 30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2024, Toulouse, France. pp.1-6, ⟨10.1109/THERMINIC62015.2024.10732885⟩ |
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Inspection of Trapping and Detrapping Dynamics in Fe-and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2024, Bangalore, France. pp.1-3, ⟨10.1109/EDTM58488.2024.10511773⟩ |
Simulation multi-physique et multi-échelle d’un SiP en technologie FO-WLPJournée technique / Workshop : IEEE Electronics Packaging Society (section France), Dec 2023, Paris, France |
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Identification of Surface Traps and Buffer Trapping Induced Reduction in 2DEG of GaN-based HEMTsIdentification of Surface Traps and Buffer Trapping Induced Reduction in 2DEG of GaN-based HEMTs, Feb 2023, Chennai, India |
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Advanced measurement techniques for GaN-based HEMTs: Trap investigation and innovative linearity characterizationXXII International Workshop on Physics of Semiconductor Devices, IIT Madras, Dec 2023, Chennai (India), France |
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Thermal characterization of AlGaN/GaN HEMTs using thermoreflectance methodIndo-French Workshop on Microwave and Photonic Technologies, IIT Madras, Feb 2023, Chennai, India |
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Estimation of thermal resistance (RTH) and thermal time constant for AlGaN/GaN HEMTs using TCAD simulationXXII International Workshop on Physics of Semiconductor Devices, IIT Madras, Dec 2023, Madras, India |
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Thermoreflectance Measurement: Effect of GaN Cap Layer and Carbon Doped Buffer Layer on Thermal Resistance of HEMTsXXII International Workshop on Physics of Semiconductor Devices, Dec 2023, Chennai (India), India |
Combination of thermal measurements and simulation to extract the hotspot temperature of GaN HEMT transistorsC'Nano The Nanoscience Meeting C'Nano 2023, C'NANO, Mar 2023, Poitiers, France |
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Mesure de température par une méthode de thermoréflectance multispectraleXXIIèmes Journées Nationales Microondes (JNM) 2022, Jun 2022, Limoges, France |
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Mesure temporelle de la température des dispositifs micro-ondes par thermoréflectanceXXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France |
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HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance2022 IEEE MTT-S International Conference on Electromagnetic and Multiphysics Modeling and Optimization (NEMO2022), Jul 2022, Limoges, France |
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Thermal Simulation and Characterization of GaN HEMT using Gate Resistance Thermometry and Thermoreflectance imaging2022 IEEE MTT-S International Conference on Electromagnetic and Multiphysics Modeling and Optimization (NEMO2022), Jul 2022, Limoges, France |
Why is heat transport modelling required for nanometrology?Thematic day “Beyond Fourier”, Société française de thermique, Sep 2022, Paris, France |
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High frequency GaN HEMT Modeling with ASM-HEMT17th European Microwave Integrated Circuits Conference (EuMiC), Sep 2022, Milan, Italy |
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GaN HEMTs thermal time constants: Theory and Measurements23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) 2022, Apr 2022, St Julian, Malta. pp.1-5, ⟨10.1109/EuroSimE54907.2022.9758888⟩ |
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La thermique des transistors GaN en régime transitoire : Théorie et mesuresXXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France |
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Effets du dopage fer et carbone dans la zone tampon GaN sur les constantes de temps de pièges dans les HEMTXXIIèmes Journées Nationales Microondes (JNM) 2022, Jun 2022, Limoges, France |
Trap Characterization in InAlN/GaN and AlN/GaN based HEMTs with Fe- and C-doped Buffers2021 16th European Microwave Integrated Circuits Conference (EuMIC), Apr 2022, London, United Kingdom. pp.197-200, ⟨10.23919/EuMIC50153.2022.9783939⟩ |
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Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations17th European Microwave Integrated Circuits Conference (EuMiC), Sep 2022, Milan, Italy |
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Identification des pièges de surface et dans la zone tampon GaN des transistors HEMT dopés FeXXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France |
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Etude de l’« Advanced Spice Model » pour la modélisation des transistor HEMT GaNXXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France |
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Evaluation of Trap Signatures in Fe-doped 0.12 µm InAlN/GaN HEMTs by DCT, Y22 and Y21 Techniques6th IEEE International Conference on Emerging Electronics (ICEE-2022), Dec 2022, Bangalore, India |
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Comparison of GaN HEMTs Thermal Results through Different Measurements Methodologies: Validation with 3D SimulationThermal Investigations of ICs and Systems (THERMINIC), Sep 2021, Berlin, Germany |
Impact of the Location of Iron Buffer Doping on Trap Signatures in GaN HEMTs2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Jul 2020, Cardiff, United Kingdom. pp.1-3, ⟨10.1109/INMMiC46721.2020.9160114⟩ |
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Dual Approach for the characterization of the thermal impedance using 3omega and thermoreflectance methods2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Jul 2020, Cardiff, United Kingdom. pp.1-3, ⟨10.1109/inmmic46721.2020.9160092⟩ |
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Thermal characterization of AlGaN/GaN HEMT using thermoreflectance methodIMAPS 15 th Workshop on Thermal Management 2020, Feb 2020, La Rochelle, France |
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Evaluation of Thermal Impedance by 3omega Method for Power Amplifier Behavioral Modeling2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Jul 2020, Cardiff, United Kingdom. pp.1-3, ⟨10.1109/INMMiC46721.2020.9160235⟩ |
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Time Domain Drain Lag Measurement and TCAD based Device Simulations of AlGaN/GaN HEMT: Investigation of Physical Mechanism2019 14 th European Microwave Conference, Oct 2019, PARIS, France |
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Model Order Reduction for thermal FE Analysis and global electrothermal approachIMAPS 14 th Workshop on Thermal Management 2019, Feb 2019, LA ROCHELLE, France |
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Characterization of Different Technologies of GaN HEMTs of 0,15 µm Ultra-Short Gate Length: Identification of Traps Using TCAD Based 2D Physics-based Simulation2019 14th European Microwave Microwave Conference, Oct 2019, PARIS, France |
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Extraction de la signature des pièges sur les HEMT GaN à courte longueur de grille en utilisant deux techniques de mesures différentesJournées Nationales Microondes 2019, May 2019, CAEN, France |
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Thermal Modeling Methodology of RF Power Devices to Improve System Level Simulations14th European Microwave Microwave Conference, Sep 2019, Paris, France |
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Behavioral Electro-thermal Modeling of Power Amplifier for System-Level DesignINMMIC : The International Workshop On Integrated Nonlinear Microwave and Millimetre-wave Circuits, Jul 2018, Brive la Gaillarde, France |
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Novel AlN/GaN HEMT Electrical Model including Trapping EffectsINMMIC 2018 : International Workshop On Integrated Nonlinear Microwave and Millimetre-wave Circuits, Jul 2018, Brive la Gaillarde, France |
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Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩ |
Thermal simulation modeling and measurements of GaN transistorsIMAPS, 13th European Advanced Technology Workshop on Micropackaging and Thermal management, Feb 2018, La Rochelle, France |
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Identification de pièges dans le buffer des HEMTs AlGaN/GaN basée sur des mesures de paramètres S basse fréquence et sur des simulations physiques20èmes Journées Nationales Microondes, May 2017, Saint-Malo, France |
Thermal Analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC Substrate through TCAD Simulations and MeasurementsProceedings of the 46st European Microwave Conference, EuMW 2016, 2016, London, UK, United Kingdom. pp |
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Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2016, Lisbon, Portugal. pp.1-4, ⟨10.1109/PRIME.2016.7519485⟩ |
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A physics based analytical model and numerical simulation for current-voltage characteristics of microwave power AlGaN/GaN HEMT2016 IEEE MTT-S International Microwave and RF Conference (IMaRC), Dec 2016, New Delhi, France. ⟨10.1109/IMaRC.2016.7939610⟩ |
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Self heating and trap characterization and simulation for large signal GaN transistors modelingIMS 2015, 2015, Phoenix, Unknown Region |
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Influence of parasitic effects of the "3omega" measurement setup to improve the determination of GaN HEMTs thermal impedance2014 9th European Microwave Integrated Circuits Conference (EuMIC), Oct 2014, ROME, Italy. pp.9--12, ⟨10.1109/EuMIC.2014.6997778⟩ |
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Understanding parasitic effects to improve the 3omega measurement of GaN HEMTs thermal impedanceIEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), May 2014, ORLANDO, United States. pp.942-946, ⟨10.1109/ITHERM.2014.6892383⟩ |
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Design of an Integrated Cascode Cell for Compact Ku-Band Power Amplifiers.Proceedings of the 42st European Microwave Conference, EuMW 2012, Oct 2012, Amsterdam, Norway. pp.1091 - 1094 |
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Caractérisation électrique de d'impédance thermique des transistors HEMTs GaN en utilisant " la méthode 3ω18 eme Journée Nationales Microondes, May 2013, Paris, France. pp.1-3 |
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Electro-thermal modeling and measurements of SiGe HBTsThermal Investigations of ICs and Systems (THERMINIC), 2012 18th International Workshop on, Sep 2012, Budapest, France. pp.1-4 |
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Electrothermal behavioral model identification and validation from time domain load pull measurement of a RF power amplifierMicrowave Symposium Digest (MTT), 2012 IEEE MTT-S International, Jun 2012, Montreal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6259489⟩ |
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Low Frequency Parasitic Effects in RF Transistors and their Impact on Power Amplifier PerformancesIEEE Wireless and Microwave Technology Conference (WAMICON), Apr 2012, Cocoa Beach - Floride, United States. pp.1-5, ⟨10.1109/WAMICON.2012.6208471⟩ |
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Measurement of the thermal impedance of GaN HEMTs using "the 3ω methodThermal Investigations of ICs and Systems (THERMINIC), 2012 18th International Workshop on, Sep 2012, Busapest, France. pp.1-4 |
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Electro-thermal Behavioral Modeling of RF Power Amplifier taking into accountLoad-pull Effects for Narrow Band Radar ApplicationMicrowave Integrated Circuits Conference (EuMIC), 2011 European, Oct 2011, Manchester, United Kingdom. pp.264-267 |
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Modélisation électrothermique comportementale d'amplificateur de puissance avec prise en compte de l'effet load pull pour des applications radar à bande étroite17èmes Journées Nationales Microondes - JNM 2011, Jun 2011, Brest, France. pp.Session 7C- Poster 9 |
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Nouvelles cellules de puissance compactes pour des applications bande Ku en technologie MMIC17eme Journées Nationales Micro-ondes (JNM), May 2011, Brest, France. pp.1C3 |
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New compact power cells for Ku band applicationsIntegrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2011),, Apr 2011, Vienne, Austria. pp.41-44, ⟨10.1109/INMMIC.2011.5773317⟩ |
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Caractérisation électrique de l'impédance thermique de transistors Bipolaires17èmes Journées Nationales Microondes, Jun 2011, Brest, France. pp.Session 6E-Poster 44 |
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On The Determination of the Thermal Impedance of Microwave Bipolar TransistorsThermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2010 The Twelveth Intersociety Conference, Jun 2010, Las Vegas, United States. pp.1 - 8, ⟨10.1109/ITHERM.2010.5501346⟩ |
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Thermal modeling and measurements of AlGaN/GaN HEMTs including Thermal Boundary ResistanceThermal Investigations of ICs and Systems (THERMINIC), 2010 16th International Workshop on, Oct 2010, Barcelona, Spain. pp.1-5 |
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Thermal and trapping phenomena assessment on AlGaN/GaN microwave power transistorMicrowave Integrated Circuits Conference (EuMIC), 2010 European, Sep 2010, Paris, France. pp.110 - 113 |
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Nonlinear characterization and modeling of low frequency dispersive effects in power transistorsIMS 2009 Workshop, WMB, Jun 2009, Boston - Massachusetts, United States. pp.Inconnu |
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Intégration d'un modèle électrothermique comportemental d'amplificateur de puissance RF sous l'environnement ouvert simulation système SCILAB/SCICOS16eme Journées Nationales Microondes, 2009, Unknown, Unknown Region |
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An Electrothermal Model of High Power HBTs for High Efficiency L/S Band Amplifiers2008 European Microwave Integrated Circuit Conference (EuMIC), Oct 2008, Amsterdam, Netherlands. pp.318-321, ⟨10.1109/EMICC.2008.4772293⟩ |
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Dual approach for HBT thermal impedance2008 14th International Workshop on Thermal Inveatigation of ICs and Systems (THERMINIC), Sep 2008, Rome, Italy. pp.190-194, ⟨10.1109/THERMINIC.2008.4669906⟩ |
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Thermal Modelling of Microwave Bipolar Transistor from 3D finite Element SimulationESA, ESA, 2008, Amsterdam, Netherlands |
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Characterization and Modeling of Impact Ionization Effects on Small and Large Signal Characteristics of AlGaAs/GaInAs/GaAs PHEMTs2008 European Microwave Integrated Circuit Conference (EuMIC), 2008, Unknown, Unknown Region. pp.119--122 |
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Spaceborne L Band High Efficiency 65W SSPA Demonstrator for Navigation and Radar ApplicationsESA Microwave Technology and Techniques Workshop, 2008, Amsterdam, Netherlands |
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Behavioral Thermal Modeling for Microwave Power Amplifier Design.IEEE MTT-S International Microwave Symposium 2007., Jun 2007, Honolulu, Hawaii, United States |
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Détermination d'impédance thermique de TBH SiGe par mesures électriques basses fréquences15ème Journées Nationales Micro-ondes, May 2007, TOULOUSE, France |
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Thermal measurements of microwave transistors and MMICs within TARGET NoETARGET Days : from Ideas to Results, in the frame of the International Conference ISMOT-2007, 2007, Roma, Italy |
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Simulation d'un limiteur bande S forte puissance a l'aide d'un nouveau modèle non-linéaire de diodes p-i-n.15èmes Journées Nationales Microondes., May 2007, TOULOUSE, France |
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Modélisation électrothermique comportementale d'amplificateur de puissance pour des applications RADAR.15èmes Journées Nationales Microondes, May 2007, Toulouse, France |
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High Power S Band Limiter Simulation with a.EuMIC, Oct 2007, Munich, France |
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New Electrothermal System Level Model for RF Power Amplifier.EuMIC, Oct 2007, MUNICH, Germany. pp. 48 - 51 |
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A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD2006 European Microwave Integrated Circuits Conference, Sep 2006, Manchester, United Kingdom. pp.285-288, ⟨10.1109/EMICC.2006.282808⟩ |
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Nonlinear Thermal Reduced Model for Power Semiconductor DevicesThermal and Thermomechanical 10th Intersociety Conference on Phenomena in Electronics Systems, 2006. ITHERM 2006., 2006, San Diego, United States. pp.638-644, ⟨10.1109/ITHERM.2006.1645405⟩ |
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From 3D Thermal Simulation to the Thermal Model Integration into Circuit SimulatorTARGET Winter School, 2005, Unknown, Unknown Region |
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Modèle thermique non linéaire pour composants microondes de puissanceJNM, 2005, Nantes, France |
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Boite à outil Scilab simulation-physique circuit : comparaison des méthodes non linéaires temporelle et fréquencielleJNM, 2005, Nantes, France |
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Implementation via a Model Order Reduction technique of physics-based non-linear thermal models for global CADEUMW, 2005, Paris, France |
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SESSION Invitée 5-1 Avancées dans le domaine des oscillateurs MMIC à faible bruit de phase14 èmes Journées Nationales Microondes, May 2005, Nantes, France |
Non linear electrothermal modelisation of LDMOS power transistor : on the definition scaling rulesHyper, R F, 2005, PARIS, Unknown Region |
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Ensemble d'outils cohérents pour la simulation physique et la caractérisation du bruit dans les composants semi-conducteurs dédiés à la CAO des circuits microondes non linéairesAS bruit, 2004, La Grande Motte, France |
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Semiconductor device and noise sources modeling: design methods and tools oriented to nonlinear H.F. oscillator CADSecond International Symposium on Fluctuations and Noise, 2004, Maspalomas, Spain. pp.373, ⟨10.1117/12.546325⟩ |
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Modélisation des composants semi-conducteurs et de leurs sources de bruit basse fréquence, outils et méthodes de conception, pour la CAO non linéaire des oscillateurs HFAS bruit, 2004, La Grande Motte, France |
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Electrothermal model of transistors based on finite element analysis for Radar applicationsThermal and Thermomechanical Phenomena in Electronic Systems, 2004. ITHERM 2004. The Eighth Intersociety Conference on, 2004, Las Vegas, United States |
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Coherent Tools for Physics-Based Simulation and Characterization of Noise in Semiconductor devices oriented to Nonlinear Microwave Circuit CADSPIE-2004 - invited paper, 2004, Unknown, Unknown Region |
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LDMOSFET and SiGeC HBT integrated in a 0.25um BiCMOS technology for RF-PA applicationsBCTM, 2004, Unknown, Unknown Region |
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Overview of research activities on the simulation of High frequency devices, circuits and systems using the Scilab/Scicos EnvironmentScilab International Conference,, 2004, Rocquencourt, France |
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Nonlinear thermal reduced model for Microwave Circuit Analysis12e GaAs Symposium, May 2004, Amsterdam, Netherlands |
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Non-Linear Electro Thermal Model of LDMOS Power Transistor Coupled to 3D Thermal Model in a Circuit SimulatorBCTM, 2003, Unknown, Unknown Region |
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Modélisation thermique et technique de réduction pour la simulation de composants de puisance en régime transitoire13ème Journées Nationales Micro-ondes, 2003, Lille, Unknown Region |
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Modélisation électrothermique non linéaire de transistors LDMOS de puissance, couplée à un modèle thermique 3D au sein d'un simulateur circuit13ème Journées Nationales Micro-ondes, 2003, Lille France 2003, Unknown Region. pp.6A6 |
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Approche clients-serveurs sur la grille de calcul pour la simulation intégréeJNM , 2003, Lille, France |
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From 3D thermal simulation of HBT devices to their thermal model integration into circuit simulators via Ritz vectors reduction techniqueThermal and Thermomechanical Phenomena in Electronic Systems, 2002. ITHERM 2002. The Eighth Intersociety Conference on, 2002, San Diego, United States. pp.22--28 |
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Electrothermal modeling of multi-fingered PHEMTs applying a global approachMicrowave Symposium Digest, 2002 IEEE MTT-S International, 2002, Unknown, Unknown Region. pp.2085--2088 |
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Transient Analysis of Collector Current Collapse In Power HBTsGAAS, EUMW, 2002, Milan, Italy |
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Apport des méthodes de l'automatique dans l'analyse et la conception des circuits électroniques non linéaires haute fréquenceJournées d'Etude Automatique et Electronique, 2002, Unknown, Unknown Region |
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Spice thermal subcircuit of multifinger HBT derived from ritz vector technique of 3D thermal simulation for electrothermal modellingGAAS - Londres, 2001, London, United Kingdom. pp.207--210 |
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Modélisation thermique tridimensionnelle de TBH et technique de réduction pour la simulation circuitJNM, 2001, Unknown, Unknown Region |
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New trends in characterization and modeling of high power RF devicesGAAS, 2001, London, United Kingdom. pp.263--266 |
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Analyse de la stabilité thermique d'un transistor bipolaire à hétérojonction GaInP/GaAs à l'aide d'une implémentation parallèle d'un simulateur couplé à un simulateur de circuitNUMELEC, 2000, POITIERS, France |
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Electrothermal harmonic balance simulation of an InGaP/GaAs HBT based on 3D thermal and semiconductor transport modelsGAAS - Paris, 2000, Paris, France. pp.516--519 |
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Characterization and modeling of nonlinear trapping effects in power SiC MESFETsMicrowave Symposium Digest., 2000 IEEE MTT-S International, 2000, Unknown, Unknown Region. pp.765--768 vol.2 |
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Harmonic balance Techniques allow nonlinear simulations of microwave circuits from devices to subsystemsECCTD 99 - Stresa (Italie), 1999, Stresa, Italy. pp.333--336 |
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Couplage direct d'un modèle physique analytique de Transistor à Effet de Champ sur Carbure de Silicium avec un simulateur de circuit en équilibrage harmonique11ème Journées Nationales Microondes, 1999, Unknown, Unknown Region |
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Evolution des techniques de conception des circuits RF et microondes : Intégration et ExpertiseXIèmes JNM Journées Nationales Microondes, May 1999, Arcachon, France |
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Couplage direct d'un modèle physique de transistor bipolaire à hétérojonction avec un simulateur de circuit en équilibrage harmonique10eme Journées Nationales Microondes, 1997, Saint-Malo, Unknown Region. pp.230--231 |
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Electrothermal modeling of semi-conductor devices for nonlinear RF and Microwave CADIEEE-MTTS Intermational Symposium on Microwave Theory and Techniques - Workshop on Nonlinear CAD, Jun 1997, Denver, CO, United States |
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Coupled localized and distributed elements analysis applying an electromagnetic software in the frequency domainMicrowave Symposium Digest, 1997., IEEE MTT-S International, 1997, Unknown, Unknown Region. pp.1021--1024 vol.2 |
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A pulsed-measurement based electrothermal model of HBT with thermal stability prediction capabilitiesMicrowave Symposium Digest, 1997., IEEE MTT-S International, 1997, Unknown, Unknown Region. pp.1515--1518 vol.3 |
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Aide à la modélisation de composants hyperfréquences par l'analyse électomagnétique10eme Journées Nationales Microondes, 1997, Saint Malo, France. pp.3A3 282--283 |
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A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuitsGAAS, 1997, Bologne, Unknown Region. pp.149--152 |
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A CAD electrothermal model for the nonlinear simulation of high power silicon bipolar transistor4 th International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits - DUISBURG, 1996, Unknown, Unknown Region |
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A design method for high efficiency class F HBT amplifiersMicrowave Symposium Digest, 1996., IEEE MTT-S International, 1996, Unknown, Unknown Region. pp.855--858 vol.2 |
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Les simulateurs intégrés : couplage transport et circuits passifs9eme Journées Nationales miccroondes, 1995, Paris, France |
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Un modèle électrothermique de transistor bipolaire forte puissance pour la simulation non linéaire9eme Journées Nationales miccroondes, 1995, Paris, France |
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Nonlinear RF caracterization and modelling of heterojonction bipolar transistors under pulsed conditions24 th European Microwawe Conference - CANNES, 1994, Unknown, Unknown Region. pp.1610--1615 |
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Caractérisation non linéaire et modèles analytiques des transistors micro-ondesSEE - Journées d'études, 1994, Paris, France |
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Analisis mediante Balance Espectral del comportamiento Quasi-Periodico de Osciladores y Divisores de FrecuenciaURSI - ESPAGNE - 1994, 1994, Unknown, Spain |
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A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors23rd European Microwave Conference, Sep 1993, Madrid, Spain. pp. 489-493, ⟨10.1109/EUMA.1993.336603⟩ |
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Analyse de la synchronisation des oscillateurs par la méthode de l'équilibrage spectral8eme Journée Nationales Microondes, 1993, Brest France |
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Approche intégrée pour la caractérisation et la modélisation des transistors micro-ondesJNM , 1993, Brest, France |
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Multi-scale and Multi-physics Analysis Of a GaN System in Package Using Fan Out Wafer Level Packaging (FO-WLP) Technology31st International Workshop on Thermal Investigations of ICs and Systems, Sep 2025, Naples, Italy. pp.208 - 208, 2014, ⟨10.1109/impact.2014.7048396⟩ |
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Mieux refroidir les puces électroniques pour les rendre plus performantesJournée Doctorant Nouvelle Aquitaine, Nov 2025, Bordeaux (France), France. 2025 |
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Thermal multiscale simulation of a FO-WLP SiP including a GaN Power Amplifier25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Apr 2024, Catania, Italie, Italy. pp.1 - 4, 2024, ⟨10.1109/eurosime60745.2024.10491445⟩ |
Characterization and modeling of dispersive effectsCambridge. Nonlinear Transistor Model Parameter Extraction Techniques, Cambridge, pp.206-250, 2011, 9780521762106 |
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Scilab/Scicos toolboxes for TelecommunicationsTsinghua University Press. Open source Software for Scientific Computation SCILAB, Research, Development and Applications, 2006 |
Intégration d'un modèle physique de transistor bipolaire à hétérojonction dans l'environnement de la C. A. O. Non linéaire des circuits monolithiques microondesElectronique. Université de Limoges, 1996. Français. ⟨NNT : ⟩ |
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Modélisation multiphysiques pour la simulation couplée des composants, circuits, et systèmes électroniques microondesElectronique. Université de Limoges, 2020 |