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Sébastien Duguay

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Ultrahigh Incorporation of Tin in SiSn Nanowires Grown via In-Plane Solid-Liquid-Solid Mechanism

Edy Azrak , Zhaoguo Xue , Shuai Liu , Wanghua Chen , Celia Castro
Applied Surface Science, 2023, 618, pp.156637. ⟨10.1016/j.apsusc.2023.156637⟩
Journal articles hal-04310644v1

Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting

Enrico Di Russo , Francesco Sgarbossa , Pierpaolo Ranieri , Gianluigi Maggioni , Samba Ndiaye
Applied Surface Science, 2023, 612, pp.155817. ⟨10.1016/j.apsusc.2022.155817⟩
Journal articles hal-03885778v1

Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting

Samba Ndiaye , Sébastien Duguay , François Vurpillot , Chiara Carraro , Gianluigi Maggioni
Materials Science in Semiconductor Processing, 2023, 164, pp.107641. ⟨10.1016/j.mssp.2023.107641⟩
Journal articles hal-04125505v1

Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography

Paul Dumas , Sébastien Duguay , Julien Borrel , Fanny Hilario , Didier Blavette
Microscopy and Microanalysis, 2022, 28, pp.994-997. ⟨10.1017/S1431927621012800⟩
Journal articles hal-03468019v1

Uphill phosphorus diffusion in carbon co-implanted silicon

P. Dumas , Sébastien Duguay , F. Hilario , A. Gauthier , Didier Blavette
Journal of Applied Physics, 2022, 131 (11), pp.115102. ⟨10.1063/5.0074682⟩
Journal articles hal-03616394v1

Investigation of Sn-containing precursors for in-plane GeSn nanowire growth

Lulu Zheng , Edy Azrak , Ruiling Gong , Celia Castro , Sébastien Duguay
Journal of Alloys and Compounds, 2022, 899, pp.163273. ⟨10.1016/j.jallcom.2021.163273⟩
Journal articles hal-03595536v1

Atom probe tomography quantification of carbon in silicon

P. Dumas , S. Duguay , J. Borrel , F. Hilario , D. Blavette
Ultramicroscopy, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩
Journal articles hal-03468007v1

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

P. Dumas , P.-L. Julliard , J. Borrel , Sébastien Duguay , F. Hilario
Journal of Applied Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩
Journal articles hal-03249547v1

Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO 2 nanoparticles

Ruiling Gong , Edy Azrak , Celia Castro , Sébastien Duguay , Philippe Pareige
Nanotechnology, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩
Journal articles hal-03249563v1

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

P. Dumas , P.-L. Julliard , J. Borrel , S. Duguay , F. Hilario
Journal of Applied Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩
Journal articles hal-03468001v1
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Atom probe tomography quantification of carbon in silicon

P. Dumas , Sébastien Duguay , J. Borrel , F. Hilario , Didier Blavette
Ultramicroscopy, 2021, 220, pp.113153. ⟨10.1016/j.ultramic.2020.113153⟩
Journal articles hal-03249568v1
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Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating

Niemat Moultif , Sébastien Duguay , O. Latry , M. Ndiaye , Eric Joubert
Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩
Journal articles hal-03469148v1

Heavy Alkali Treatment of Cu(In,Ga)Se 2 Solar Cells: Surface versus Bulk Effects

Susanne Siebentritt , Enrico Avancini , Marcus Bär , Jakob Bombsch , Emilie Bourgeois
Advanced Energy Materials, 2020, pp.1903752. ⟨10.1002/aenm.201903752⟩
Journal articles hal-02461969v1
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Hydrogen Plasma-Assisted Growth of Gold Nanowires

Ruiling Gong , Zhen Zheng , Junyang An , Jean-Luc Maurice , Edy Azrak
Crystal Growth & Design, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
Journal articles hal-03030277v1

Low-Temperature Plasma-Assisted Growth of Core–Shell GeSn Nanowires with 30% Sn

Edy Azrak , Wanghua Chen , Simona Moldovan , Sébastien Duguay , Philippe Pareige
Journal of Physical Chemistry C, 2020, 124 (1), pp.1220-1226. ⟨10.1021/acs.jpcc.9b10444⟩
Journal articles hal-02433462v1
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Influence of RbF post deposition treatment on heterojunction and grain boundaries in high efficient (21.1%) Cu(In,Ga)Se2 solar cells

Mohit Raghuwanshi , Arantxa Vilalta-Clemente , Celia Castro , Sébastien Duguay , Emmanuel Cadel
Nano Energy, 2019, 60, pp.103-110. ⟨10.1016/j.nanoen.2019.03.028⟩
Journal articles hal-02108142v1

Evidence of Mg segregation to threading dislocation in normally-off GaN-HEMT

Sébastien Duguay , Andres Echeverri , Celia Castro , Olivier Latry
IEEE Transactions on Nanotechnology, 2019, 18, pp.995-998. ⟨10.1109/TNANO.2019.2942400⟩
Journal articles hal-02299201v1

Effect of the thermal annealing and the nominal composition in the elemental distribution of InxAl1-xAsySb1-y for triple junction solar cells

J. Hernández-Saz , M. Herrera , J. Pizarro , M. Gonzalez , J. Abell
Journal of Alloys and Compounds, 2019, 792, pp.1021-1027. ⟨10.1016/j.jallcom.2019.04.119⟩
Journal articles hal-02108138v1
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Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

Rémi Demoulin , Manuel Roussel , Sébastien Duguay , Dominique Muller , Daniel Mathiot
Journal of Physical Chemistry C, 2019, 123 (12), pp.7381-7389. ⟨10.1021/acs.jpcc.8b08620⟩
Journal articles hal-02082140v1

3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon

P. Dumas , Sébastien Duguay , J. Borrel , A. Gauthier , E. Ghegin
Applied Physics Letters, 2019, 115 (13), pp.132103. ⟨10.1063/1.5121629⟩
Journal articles hal-02298943v1

Influence of the growth temperature on the composition distribution at sub-nm scale of InAlAsSb for solar cells

J. Hernández-Saz , M. Herrera , J. Pizarro , P.L. Galindo , M. Gonzalez
Journal of Alloys and Compounds, 2018, 763, pp.1005-1011. ⟨10.1016/j.jallcom.2018.05.333⟩
Journal articles hal-02108144v1

Growth of In-Plane Ge 1– x Sn x Nanowires with 22 at. % Sn Using a Solid–Liquid–Solid Mechanism

Edy Azrak , Wanghua Chen , Simona Moldovan , Shiwen Gao , Sébastien Duguay
Journal of Physical Chemistry C, 2018, 122 (45), pp.26236-26242. ⟨10.1021/acs.jpcc.8b07142⟩
Journal articles hal-02108143v1

Assessment of High Sn Incorporation in Ge NanoWires Synthesized via In Plane Solid-Liquid-Solid Mechanism by In-Situ TEM

Simona Moldovan , Edy Azrak , Wanghua Chen , Shiwen Gao , Sébastien Duguay
Microscopy and Microanalysis, 2018, 24 (S1), pp.306-307. ⟨10.1017/S1431927618002027⟩
Journal articles hal-02183481v1

Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives

J. Barnes , A. Grenier , I. Mouton , S. Barraud , G. Audoit
Scripta Materialia, 2018, 148, pp.91 - 97. ⟨10.1016/j.scriptamat.2017.05.012⟩
Journal articles hal-01765929v1
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Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2thin-film solar cells

Arantxa Vilalta-Clemente , Mohit Raghuwanshi , Sébastien Duguay , Celia Castro , Emmanuel Cadel
Applied Physics Letters, 2018, 112 (10), pp.103105. ⟨10.1063/1.5020805⟩
Journal articles hal-01929133v1

Influence of Na on grain boundary and properties of Cu(In,Ga)Se 2 solar cells

Mohit Raghuwanshi , Emmanuel Cadel , Sébastien Duguay , Ludovic Arzel , Nicolas Barreau
Progress in Photovoltaics, 2017, 25 (5), pp.367 - 375. ⟨10.1002/pip.2869⟩
Journal articles hal-01720935v1

New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint

Nicolas Rolland , François Vurpillot , Sébastien Duguay , Baishakhi Mazumder , James Speck
Microscopy and Microanalysis, 2017, 23 (02), pp.247 - 254. ⟨10.1017/s1431927617000253⟩
Journal articles hal-01766098v1

Atom-Scale Compositional Distribution in InAlAsSb-Based Triple Junction Solar Cells by Atom Probe Tomography

J Hernández-Saz , M Herrera , F J Delgado , Sébastien Duguay , T Philippe
Nanotechnology, 2016, 27 (30), pp.305402. ⟨10.1088/0957-4484/27/30/305402⟩
Journal articles hal-01954209v1

Atom Probe Tomography Analysis of InAlGaAs Capped InAs/GaAs Stacked Quantum Dots with Variable Barrier Layer Thickness

J. Hernández-Saz , M. Herrera , S.I. Molina , C.R. Stanley , Sébastien Duguay
Acta Materialia, 2016, 103, pp.651-657. ⟨10.1016/j.actamat.2015.10.048⟩
Journal articles hal-01954206v1

Accuracy of analyses of microelectronics nanostructures in atom probe tomography

François Vurpillot , Nicolas Rolland , Robert Estivill , Sébastien Duguay , D. Blavette
Semiconductor Science and Technology, 2016, 31 (7), pp.074002. ⟨10.1088/0268-1242/31/7/074002⟩
Journal articles hal-01928850v1

Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography

D. Blavette , Sébastien Duguay
Journal of Applied Physics, 2016, 119 (18), pp.181502. ⟨10.1063/1.4948238⟩
Journal articles hal-01928847v1

An analytical model accounting for tip shape evolution during atom probe analysis of heterogeneous materials

Nicolas Rolland , D. J. Larson , B. P. Geiser , Sébastien Duguay , François Vurpillot
Ultramicroscopy, 2015, 159, pp.195--201. ⟨10.1016/j.ultramic.2015.03.010⟩
Journal articles hal-01928854v1

3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs

J. Hernández-Saz , M. Herrera , S.I. Molina , C.R. Stanley , Sébastien Duguay
Scripta Materialia, 2015, 103, pp.73-76. ⟨10.1016/j.scriptamat.2015.03.013⟩
Journal articles hal-02177759v1

Influence of boron clustering on the emitter quality of implanted silicon solar cells: An atom probe tomography study

Mohit Raghuwanshi , Adeline Lanterne , Jérôme Le Perchec , Philippe Pareige , Emmanuel Cadel
Progress in Photovoltaics, 2015, 23 (12), pp.1724--1733. ⟨10.1002/pip.2607⟩
Journal articles hal-01929136v1
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Dynamic evolution and fracture of multilayer field emitters in atom probe tomography: a new interpretation

Nicolas Rolland , François Vurpillot , Sébastien Duguay , Didier Blavette
European Physical Journal: Applied Physics, 2015, 72 (2), pp.21001. ⟨10.1051/epjap/2015150233⟩
Journal articles hal-02107622v1

A Meshless Algorithm to Model Field Evaporation in Atom Probe Tomography

Nicolas Rolland , François Vurpillot , Sébastien Duguay , Didier Blavette
Microscopy and Microanalysis, 2015, 21 (6), pp.1649-1656. ⟨10.1017/S1431927615015184⟩
Journal articles hal-02107013v1

Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

Anna Maria Beltrán , Sébastien Duguay , Christian Strenger , Anton J Bauer , Fuccio Cristiano
Solid State Communications, 2015, 221, pp.28-32. ⟨10.1016/j.ssc.2015.08.017⟩
Journal articles hal-01720451v1

Quantitative investigation of SiGeC layers using atom probe tomography

Robert Estivill , Adeline Grenier , Sébastien Duguay , François Vurpillot , Tanguy Terlier
Ultramicroscopy, 2015, 150, pp.23--29. ⟨10.1016/j.ultramic.2014.11.020⟩
Journal articles hal-01928855v1

Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques

A. Grenier , Sébastien Duguay , J. P. Barnes , R. Serra , Nicolas Rolland
Applied Physics Letters, 2015, 106 (21), pp.213102. ⟨10.1063/1.4921352⟩
Journal articles hal-01928856v1

Quantitative analysis of Si/SiGeC superlattices using atom probe tomography

Robert Estivill , Adeline Grenier , Sébastien Duguay , François Vurpillot , Tanguy Terlier
Ultramicroscopy, 2015, 159, pp.223-231. ⟨10.1016/j.ultramic.2015.03.014⟩
Journal articles hal-02107589v1

Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

N. Fernández-Delgado , M. Herrera , S.I. Molina , Celia Castro , Sébastien Duguay
Applied Surface Science, 2015, 359, pp.676-678. ⟨10.1016/j.apsusc.2015.10.161⟩
Journal articles hal-02111986v1

Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2solar cells

M. Raghuwanshi , E. Cadel , Philippe Pareige , S. Duguay , F. Couzinie-Devy
Applied Physics Letters, 2014, 105 (1), pp.013902. ⟨10.1063/1.4890001⟩
Journal articles hal-01929138v1

Atom-probe tomography study of boron precipitation in highly implanted silicon

Didier Blavette , Huiyuan Wang , Manon Bonvalet , Florian Hüe , Sébastien Duguay
physica status solidi (a), 2014, 211 (1), pp.126--130. ⟨10.1002/pssa.201300127⟩
Journal articles hal-01928861v1

Atom probe tomography in nanoelectronics

Didier Blavette , Sébastien Duguay
European Physical Journal: Applied Physics, 2014, 68 (1), pp.10101. ⟨10.1051/epjap/2014140060⟩
Journal articles hal-01928859v1

3D analysis of advanced nano-devices using electron and atom probe tomography

A. Grenier , Sébastien Duguay , J. P. Barnes , R. Serra , G. Haberfehlner
Ultramicroscopy, 2014, 136, pp.185--192. ⟨10.1016/j.ultramic.2013.10.001⟩
Journal articles hal-01929139v1
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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Yang Qiu , Fuccio Cristiano , Karim Huet , Fulvio Mazzamuto , Giuseppe Fisicaro
Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩
Journal articles hal-01659180v1

Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis

R. Khelifi , D. Mathiot , Rajiv Gupta , D. Muller , M. Roussel
Applied Physics Letters, 2013, 102, pp.013116_1-4
Journal articles hal-00799830v1

Point process statistics in atom probe tomography

Thomas Philippe , Sébastien Duguay , G. Grancher , D. Blavette
Ultramicroscopy, 2013, 132, pp.114--120. ⟨10.1016/j.ultramic.2012.10.004⟩
Journal articles hal-01928863v1

Temperature dependence of nucleation rate in a binary solid solution

Huiyuan Wang , T. Philippe , S. Duguay , D. Blavette
Philosophical Magazine Letters, 2012, 92 (12), pp.718--725. ⟨10.1080/09500839.2012.725948⟩
Journal articles hal-01928868v1

Advance in multi-hit detection and quantization in atom probe tomography

Gérald da Costa , H. Wang , Sébastien Duguay , A. Bostel , D. Blavette
Review of Scientific Instruments, 2012, 83 (12), ⟨10.1063/1.4770120⟩
Journal articles hal-01928866v1

Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation

T. Philippe , S. Duguay , D. Mathiot , D. Blavette
Journal of Applied Physics, 2011, 109, pp. 023501_1-4
Journal articles hal-00597120v1

Clustering and nearest neighbour distances in atom probe tomography: The influence of the interfaces

Thomas Philippe , O. Cojocaru-Mirédin , Sébastien Duguay , D. Blavette
Journal of Microscopy, 2010, 239 (1), pp.72--77. ⟨10.1111/j.1365-2818.2009.03359.x⟩
Journal articles hal-01928875v1

Clustering and pair correlation function in atom probe tomography

Thomas Philippe , Sébastien Duguay , D. Blavette
Ultramicroscopy, 2010, 110 (7), pp.862--865. ⟨10.1016/j.ultramic.2010.03.004⟩
Journal articles hal-01928874v1

Atomic-scale redistribution of dopants in polycrystalline silicon layers

S. Duguay , A. Colin , D. Mathiot , Pascal Morin , D. Blavette
Applied Physics, 2010, 108, pp.034911_1-7
Journal articles hal-00526353v1

Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate

Sébastien Duguay , M. Ngamo , P. F Fazzini , Fuccio Cristiano , K. Daoud
Thin Solid Films, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩
Journal articles hal-01922657v1
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Direct imaging of boron segregation to extended defects in silicon

Sébastien Duguay , Thomas Philippe , Fuccio Cristiano , D. Blavette
Applied Physics Letters, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩
Journal articles hal-01922903v1

Atomic-scale study of the role of carbon on boron clustering

Thomas Philippe , Sébastien Duguay , J.J. Grob , D. Mathiot , D. Blavette
Thin Solid Films, 2010, 518, pp. 2406-2408. ⟨10.1016/j.tsf.2009.08.022⟩
Journal articles hal-00464139v1

Clustering and nearest neighbour distances in atom-probe tomography

Thomas Philippe , F. de Geuser , Sébastien Duguay , Williams Lefebvre , O. Cojocaru-Mirédin
Ultramicroscopy, 2009, 109, pp.1304-1309. ⟨10.1016/j.ultramic.2009.06.007⟩
Journal articles hal-00457542v1

Evidence of atomic-scale arsenic clustering in highly doped silicon

Sébastien Duguay , François Vurpillot , Thomas Philippe , E. Cadel , Rodrigue Lardé
Journal of Applied Physics, 2009, 106 (10), pp.106102. ⟨10.1063/1.3257178⟩
Journal articles hal-01929143v1

Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors

Emmanuel Cadel , François Vurpillot , Rodrigue Lardé , Sébastien Duguay , Bernard Deconihout
Journal of Applied Physics, 2009, 106 (4), pp.044908. ⟨10.1063/1.3186617⟩
Journal articles hal-01929144v1

Structural analysis of annealed amorphous SiO/SiO2 superlattice

B. Pivac , P. Dubcek , I. Capan , H. Zorc , S. Bernstorff
Thin Solid Films, 2008, 516, pp. 6796-6799
Journal articles hal-00300610v1

Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers

S. Duguay , S. Burignat , P. Kern , J.J. Grob , A. Souifi
Semicond. Sci. Technol., 2007, 22, pp. 837-842
Journal articles hal-00250270v1

Silicon nanoparticles formation in annealed SiO/SiO2 multilayers

I. Kovacevic , P. Dubcek , S. Duguay , H. Zorc , N. Radic
Physica E: Low-dimensional Systems and Nanostructures, 2007, 38, pp. 50-53
Journal articles hal-00349867v1

Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry

M. Mansour , A. En Naciri , L. Johann , S. Duguay , J.J. Grob
Journal of Physics and Chemistry of Solids, 2006, 67, pp.1291-1294
Journal articles hal-00207770v1

Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

S. Duguay , A. Slaoui , Grob J.J. , M. Kanoun , S. Burignat
Mater. Sci. Eng. B, 2005, 124-125, pp.488-493
Journal articles hal-00207848v1

Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing

Sébastien Duguay , J.J. Grob , A. Slaoui , Y. Le Gall , M. Amann-Liess
Journal of Applied Physics, 2005, 97, pp.104330_1-5
Journal articles hal-00134846v1

Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO 2

Rémi Demoulin , Manuel Roussel , Sébastien Duguay , D. Muller , D. Mathiot
Microscopy & Microanalysis 2019, Aug 2019, Portland, United States. pp.2540-2541, ⟨10.1017/S1431927619013436⟩
Conference papers hal-02294165v1

Combining TEM and APT for a Better Understanding of Super High Efficiency Cu(In,Ga)Se2 Thin Film Solar Cells

Celia Castro , Mohit Raghuwanshi , Philippe Pareige , Sébastien Duguay , Emmanuel Cadel
European Microscopy Society Congress 2016, Dec 2016, Lyon, France. pp.914-915, ⟨10.1002/9783527808465.EMC2016.6800⟩
Conference papers hal-01954234v1

Atom‐Probe Tomography and Nanosciences

Didier Blavette , Isabelle Mouton , Sébastien Duguay
European Microscopy Congress 2016: Proceedings, Aug 2016, Lyon, France
Conference papers hal-02108167v1

Extended defects in ion-implanted si during nanosecond laser annealing

Fuccio Cristiano , Y. Qiu , Eléna Bedel-Pereira , Karim Huet , Fulvio Mazzamuto
Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
Conference papers hal-01721156v1

Co-implantation: A simple way to grow doped Si nanocrystals embedded in SiO2

D. Mathiot , R. Khelifi , D. Muller , S. Duguay
Material Research Society (MRS) Spring Meeting, Symposium on Nanoscale Materials Modification by Photon, Ion, and Electron Beams, Apr 2012, San Francisco, United States. pp.mrss12-1455-ii08-21
Conference papers hal-00697568v1

Modeling of boron diffusion in silicon: Influence of precipitation

H. Wang , T. Philippe , J. Marcon , S. Duguay , D. Mathiot
European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III, May 2012, Strasbourg, France
Conference papers hal-00743292v1

Synthèse par faisceaux d'ion et caractérisation de nanocristaux de silicium dopés dans SiO SiO2

R. Khelifi , D. Mathiot , D. Muller , S. Duguay
13èmes Journées de la Matière Condensée (JMC13), Aug 2012, Montpellier, France
Conference papers hal-00743238v1

Modeling artifacts in the analysis of test semiconductor structures in atom probe tomography

F. Vurpillot , M. Gruber , S. Duguay , E. Cadel , Bernard Deconihout
AIP Conference Proceedings, 2009, Unknown, Unknown Region. pp.175--180, ⟨10.1063/1.3251216⟩
Conference papers hal-01929146v1

Atomic-scale study of the role of carbon on boron clustering

T. Philippe , S. Duguay , J.J. Grob , D. Mathiot , D. Blavette
European Material Research Society (E-MRS) Spring Conference, Symposium on Silicon and Germanium issues for future CMOS devices, Jun 2009, Strasbourg, France. pp.2406-2408
Conference papers hal-00409615v1

Substrate temperature dependence of Si nanostructures formation in SiO/SiO2 superlattice

B. Pivac , I. Capan , P. Dubcek , N. Radic , S. Bernstorff
European Material Research Society (E-MRS) Spring Conference, Symposium on Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications, May 2007, Strasbourg, France
Conference papers hal-00252113v1

Structural analysis of annealed amorphous SiO/SiO2 superlattice

B. Pivac , P. Dubcek , I. Capan , H. Zorc , S. Bernstorff
European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France
Conference papers hal-00303670v1

Si nanostructures formation in SiO/SiO2 superlattice for next generation solar cells

B. Pivac , I. Capan , P. Dubcek , N. Radic , S. Duguay
European Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France
Conference papers hal-00252112v1

Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory properties

S. Duguay , J.J. Grob , A. Slaoui , P. Kern
Material Research Society (MRS) Spring Meeting, Symposium on Science and Technology of Nonvolatile Memories, Apr 2006, SAN FRANCISCO, United States. p. G02-05
Conference papers hal-00204821v1

Propriétés structurales de couches de SiO2 implantées germanium et application aux mémoires à nanocristaux

S. Duguay
IXèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2006), 2006, Rennes, France
Conference papers hal-00081227v1

Silicon nanoparticles formation in annealed SiO/SiO2 multilayers

I. Kovacevic , P. Dubcek , S. Duguay , H. Zorc , N. Radic
European Material Research Society (E-MRS) Spring Conference, Symposium on Silicon Nanocrystals for Electronics and Sensing Applications, 2006, Nice, France
Conference papers hal-00350341v1

Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry

M. Mansour , A. En Naciri , L. Johann , S. Duguay , J.J. Grob
13th International Symposium on Intercalation Compounds, Jun 2006, Clermont-Ferrand, France
Conference papers hal-00207775v1

Fabrication de nanocristaux de germanium par implantation ionique et applications à effet mémoire,

S. Duguay
VIIIèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2005), May 2005, Paris, France
Conference papers hal-00134842v1

Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

S. Duguay , A. Slaoui , J.J. Grob , M. Kanoun , S. Burignat
European Material Research Society (E-MRS) Spring Conference, Symposium on Materials Science and Device Issues for Future Si-based Technologies, 2005, Strasbourg, France
Conference papers hal-00021653v1