
Sébastien Duguay
86
Documents
Publications
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Publications
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Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO 2Microscopy & Microanalysis 2019, Aug 2019, Portland, United States. pp.2540-2541, ⟨10.1017/S1431927619013436⟩
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hal-02294165
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Combining TEM and APT for a Better Understanding of Super High Efficiency Cu(In,Ga)Se2 Thin Film Solar CellsEuropean Microscopy Society Congress 2016, Dec 2016, Lyon, France. pp.914-915, ⟨10.1002/9783527808465.EMC2016.6800⟩
Communication dans un congrès
hal-01954234
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Atom‐Probe Tomography and NanosciencesEuropean Microscopy Congress 2016: Proceedings, Aug 2016, Lyon, France
Communication dans un congrès
hal-02108167
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Extended defects in ion-implanted si during nanosecond laser annealingJunction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
Communication dans un congrès
hal-01721156
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Synthèse par faisceaux d'ion et caractérisation de nanocristaux de silicium dopés dans SiO SiO<sub>2</sub>13èmes Journées de la Matière Condensée (JMC13), Aug 2012, Montpellier, France
Communication dans un congrès
hal-00743238
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Co-implantation: A simple way to grow doped Si nanocrystals embedded in SiO<sub>2</sub>Material Research Society (MRS) Spring Meeting, Symposium on Nanoscale Materials Modification by Photon, Ion, and Electron Beams, Apr 2012, San Francisco, United States. pp.mrss12-1455-ii08-21
Communication dans un congrès
hal-00697568
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Modeling of boron diffusion in silicon: Influence of precipitationEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III, May 2012, Strasbourg, France
Communication dans un congrès
hal-00743292
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Atomic-scale study of the role of carbon on boron clusteringEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Silicon and Germanium issues for future CMOS devices, Jun 2009, Strasbourg, France. pp.2406-2408
Communication dans un congrès
hal-00409615
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Modeling artifacts in the analysis of test semiconductor structures in atom probe tomographyAIP Conference Proceedings, 2009, Unknown, Unknown Region. pp.175--180, ⟨10.1063/1.3251216⟩
Communication dans un congrès
hal-01929146
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Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory propertiesMaterial Research Society (MRS) Spring Meeting, Symposium on Science and Technology of Nonvolatile Memories, Apr 2006, SAN FRANCISCO, United States. p. G02-05
Communication dans un congrès
hal-00204821
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Si nanostructures formation in SiO/SiO2 superlattice for next generation solar cellsEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France
Communication dans un congrès
hal-00252112
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Structural analysis of annealed amorphous SiO/SiO2 superlatticeEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France
Communication dans un congrès
hal-00303670
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Substrate temperature dependence of Si nanostructures formation in SiO/SiO2 superlatticeEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications, May 2007, Strasbourg, France
Communication dans un congrès
hal-00252113
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Silicon nanoparticles formation in annealed SiO/SiO2 multilayersEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Silicon Nanocrystals for Electronics and Sensing Applications, 2006, Nice, France
Communication dans un congrès
hal-00350341
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Propriétés structurales de couches de SiO<sub>2</sub> implantées germanium et application aux mémoires à nanocristauxIXèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2006), 2006, Rennes, France
Communication dans un congrès
hal-00081227
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Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry13th International Symposium on Intercalation Compounds, Jun 2006, Clermont-Ferrand, France
Communication dans un congrès
hal-00207775
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Structural properties of Ge-implanted SiO<sub>2</sub> layers and related MOS memory effectsEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Materials Science and Device Issues for Future Si-based Technologies, 2005, Strasbourg, France
Communication dans un congrès
hal-00021653
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Fabrication de nanocristaux de germanium par implantation ionique et applications à effet mémoire,VIIIèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2005), May 2005, Paris, France
Communication dans un congrès
hal-00134842
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NANOFILAMENTS D'ALLIAGE DE GESN, PREPARATION ET APPLICATIONSFrance, N° de brevet: WO2019166486. 2019
Brevet
hal-02303270
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Propriétés de stockage de charges de nanocristaux de germanium incorporés dans des couches de silice par implantation ioniqueMicro et nanotechnologies/Microélectronique. Unuiversité de Strasbourg I, 2006. Français. ⟨NNT : ⟩
Thèse
hal-00211889
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