Sébastien Duguay
85
Documents
Publications
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Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO 2Microscopy & Microanalysis 2019, Aug 2019, Portland, United States. pp.2540-2541, ⟨10.1017/S1431927619013436⟩
Conference papers
hal-02294165v1
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Atom‐Probe Tomography and NanosciencesEuropean Microscopy Congress 2016: Proceedings, Aug 2016, Lyon, France
Conference papers
hal-02108167v1
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Combining TEM and APT for a Better Understanding of Super High Efficiency Cu(In,Ga)Se2 Thin Film Solar CellsEuropean Microscopy Society Congress 2016, Dec 2016, Lyon, France. pp.914-915, ⟨10.1002/9783527808465.EMC2016.6800⟩
Conference papers
hal-01954234v1
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Extended defects in ion-implanted si during nanosecond laser annealingJunction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
Conference papers
hal-01721156v1
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Modeling of boron diffusion in silicon: Influence of precipitationEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III, May 2012, Strasbourg, France
Conference papers
hal-00743292v1
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Synthèse par faisceaux d'ion et caractérisation de nanocristaux de silicium dopés dans SiO SiO213èmes Journées de la Matière Condensée (JMC13), Aug 2012, Montpellier, France
Conference papers
hal-00743238v1
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Co-implantation: A simple way to grow doped Si nanocrystals embedded in SiO2Material Research Society (MRS) Spring Meeting, Symposium on Nanoscale Materials Modification by Photon, Ion, and Electron Beams, Apr 2012, San Francisco, United States. pp.mrss12-1455-ii08-21
Conference papers
hal-00697568v1
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Atomic-scale study of the role of carbon on boron clusteringEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Silicon and Germanium issues for future CMOS devices, Jun 2009, Strasbourg, France. pp.2406-2408
Conference papers
hal-00409615v1
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Modeling artifacts in the analysis of test semiconductor structures in atom probe tomographyAIP Conference Proceedings, 2009, Unknown, Unknown Region. pp.175--180, ⟨10.1063/1.3251216⟩
Conference papers
hal-01929146v1
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Si nanostructures formation in SiO/SiO2 superlattice for next generation solar cellsEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France
Conference papers
hal-00252112v1
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Structural analysis of annealed amorphous SiO/SiO2 superlatticeEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Advanced Materials and Concepts for Photovoltaics, May 2007, Strasbourg, France
Conference papers
hal-00303670v1
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Substrate temperature dependence of Si nanostructures formation in SiO/SiO2 superlatticeEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications, May 2007, Strasbourg, France
Conference papers
hal-00252113v1
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Influence of the Ge dose in ion-implanted SiO2 layers on the related nanocrystal-memory propertiesMaterial Research Society (MRS) Spring Meeting, Symposium on Science and Technology of Nonvolatile Memories, Apr 2006, SAN FRANCISCO, United States. p. G02-05
Conference papers
hal-00204821v1
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Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry13th International Symposium on Intercalation Compounds, Jun 2006, Clermont-Ferrand, France
Conference papers
hal-00207775v1
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Propriétés structurales de couches de SiO2 implantées germanium et application aux mémoires à nanocristauxIXèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2006), 2006, Rennes, France
Conference papers
hal-00081227v1
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Silicon nanoparticles formation in annealed SiO/SiO2 multilayersEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Silicon Nanocrystals for Electronics and Sensing Applications, 2006, Nice, France
Conference papers
hal-00350341v1
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Fabrication de nanocristaux de germanium par implantation ionique et applications à effet mémoire,VIIIèmes Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM'2005), May 2005, Paris, France
Conference papers
hal-00134842v1
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Structural properties of Ge-implanted SiO2 layers and related MOS memory effectsEuropean Material Research Society (E-MRS) Spring Conference, Symposium on Materials Science and Device Issues for Future Si-based Technologies, 2005, Strasbourg, France
Conference papers
hal-00021653v1
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NANOFILAMENTS D'ALLIAGE DE GESN, PREPARATION ET APPLICATIONSFrance, N° de brevet: WO2019166486. 2019
Patents
hal-02303270v1
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Propriétés de stockage de charges de nanocristaux de germanium incorporés dans des couches de silice par implantation ioniqueMicro et nanotechnologies/Microélectronique. Unuiversité de Strasbourg I, 2006. Français. ⟨NNT : ⟩
Theses
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