Soline Boyer
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Publications
GaPSb/Si tandem material with APBs for efficient overall water splittingJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France
Communication dans un congrès
hal-03032905v1
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Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications47th Photovoltaic Specialists Conference (PVSC 2020), Jun 2020, Calgary (virtual), Canada. pp.0747-0751, ⟨10.1109/PVSC45281.2020.9300544⟩
Communication dans un congrès
hal-03223077v1
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Experimental investigation of performances enhancement in hot carrier solar cells: improvements and perspectives (Conference Presentation)SPIE Photonics West - OPTO 2019, Feb 2019, San Francisco, United States. pp.109130E, ⟨10.1117/12.2513178⟩
Communication dans un congrès
hal-02402232v1
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III-V/Si photoelectrodes: a new route for solar hydrogen production11è Journées Scientifiques de Porquerolles (JSP2019), C'Nano-PACA, Sep 2019, Porquerolles, France
Communication dans un congrès
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Structural and theoretical studies of Black Phases of CsPbI3: influence of the anharmonicityMaterials Research Society - Spring Meeting 2019 (MRS 2019 Spring Meeting), Apr 2019, Phoenix, United States
Communication dans un congrès
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GaPSb/Si photoelectrode for Solar Fuel ProductionEuropean COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria
Communication dans un congrès
hal-03102622v1
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Tight-Binding modeling of CsPbI3 in several perovskite phasesInternational Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics 2018 (ABXPV&PEROPTO 18), Feb 2018, Rennes, France. ⟨10.29363/nanoge.abxpvperopto.2018.046⟩
Communication dans un congrès
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Anharmonicity and Disorder in the Black Phases of CsPbI3 used for Stable Inorganic Perovskite Solar Cells7th World Conference on Photovoltaic Energy Conversion (WCPEC-7), Jun 2018, Waikoloa, United States. pp.1715-1717, ⟨10.1109/PVSC.2018.8547769⟩
Communication dans un congrès
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Black Phases of CsPbI3: Structural and Theoretical StudiesnanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain. ⟨10.29363/nanoge.fallmeeting.2018.218⟩
Communication dans un congrès
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Symmetry-Based Tight Binding Modeling of Halide Perovskite SemiconductorsMultiscaleSolar COST meeting (6th Management Committee and Workgroup Meetings), Jul 2017, Vilnius, Lithuania
Communication dans un congrès
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Quantitative optoelectronic measurements of carrier thermodynamics properties in quantum well hot carrier solar cell44th IEEE Photovoltaic Specialists Conference (PVSC 2017), Jun 2017, Washington, United States. pp.2192-2194, ⟨10.1109/PVSC.2017.8366530⟩
Communication dans un congrès
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Symmetry-Based Tight Binding Modeling of Halide Perovskite Semiconductors3è Journées Pérovskites Hybrides (JPH 2017), May 2017, Angers, France
Communication dans un congrès
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Physical properties of 3D and 2D Ruddlesden-Popper halide perovskite semiconductorsCompound Semiconductor Week 2017 - 44th International Symposium on Compound Semiconductors (ISCS 2017), May 2017, Berlin, Germany
Communication dans un congrès
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Electronic properties of bulk 3D, 2D Ruddlesden-Popper phases and colloidal quantum dots of halide perovskite semiconductors: recent results (Keynote Speaker)3è Journées Pérovskites Hybrides (JPH 2017), May 2017, Angers, France
Communication dans un congrès
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Symmetry-Based Tight Binding Modeling of Halide Perovskite SemiconductorsInternational Conference on Perovskite Thin Film Photovoltaics (ABXPV17), Mar 2017, Valencia, Spain
Communication dans un congrès
hal-01507450v1
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Plastic crystal behavior, tight-binding modelling and low energy phonon spectroscopy in hybrid perovskites crystalsHybrid and Organic Photovoltaics Conference (HOPV 2016), Jun 2016, Swansea, United Kingdom
Communication dans un congrès
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Tight binding modeling of halid perovskites2è Journées Pérovskites Hybrides (JPH 2016), May 2016, Rennes, France
Communication dans un congrès
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Advanced concepts of photovoltaics based on III-V compounds16th International Conference of Physical Chemistry (ROMPHYSCHEM-16), Sep 2016, Galaţi, Romania
Communication dans un congrès
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First stage results on III-V/Si tandem cells using GaAsPN dilute-nitrideEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Communication dans un congrès
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ab initio modeling of InAs/InP valence band offsetGDR CoDFT 2013, May 2013, Lorient, France
Communication dans un congrès
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CdSe/ZnTe superlattices optimized as absorbers for photovoltaics17th European Molecular Beam Epitaxy Workshop (EuroMBE), Mar 2013, Levi, Finland
Communication dans un congrès
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Tight binding simulation of type-II superlattice absorptionInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany
Communication dans un congrès
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Raman investigation of GaP-Si interfaces grown by molecular beam epitaxyEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩
Communication dans un congrès
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Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayersInternational Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
Communication dans un congrès
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
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MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diodeeuro-MBE 2011, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
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Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaPINNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1
Communication dans un congrès
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Semi-analytical evaluation of linear and non-linear piezoelectric potential for quantum nanostructures with axial symmetryWorkshop on Empirical Methods in Semiconductor Nano-Structures Design and Modelling, Jun 2010, Manchester, United Kingdom
Communication dans un congrès
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
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k.p theory beyond standard 8-band theory parametrization strategies and its applicability in electronic and optoelectronic devices designWorkshop on Empirical Methods in Semiconductor Nano-structures Design and Modelling, Jun 2010, Manchester, United Kingdom
Communication dans un congrès
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Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on SiliconEMRS, Jun 2009, Strasbourg, France. pp.1
Communication dans un congrès
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Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasersInternational Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '08), Sep 2008, Nottingham, United Kingdom. p 1-2, ⟨10.1109/NUSOD.2008.4668208⟩
Communication dans un congrès
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩
Communication dans un congrès
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Photoluminescence de nanostructures sur substrat GaP/SiJournées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1
Communication dans un congrès
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Light emitting diodes on silicon substrates: preliminary resultsTNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩
Communication dans un congrès
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Asymmetric Stark Shift in InAs/GaAsP(Q1.18) quantum dots grown on (311)B InP substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France
Communication dans un congrès
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Preliminary results for the realization of light emitters on silicon substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
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First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
Communication dans un congrès
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PHOTOCURENT SPECTROSCOPY OF InAs/GaInAsP(Q1.18) QUANTUM DOTSLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France
Communication dans un congrès
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Design and fabrication of a tunable InP-based VCSEL using a electro-optic index modulatorIndium Phosphide and Related Materials Conference 2006, May 2006, Pinceton, United States. p64 - 67, ⟨10.1109/ICIPRM.2006.1634112⟩
Communication dans un congrès
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III-V GaP solar cells on silicon12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France
Poster de conférence
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CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cells11è Journées Nationales du PhotoVoltaïque (JNPV 2021), Jan 2021, Dourdan, France
Poster de conférence
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Towards III-V on silicon solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015
Poster de conférence
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Insight into electronic and structural properties of CH3NH3PbX3 (X=Cl, Br, I) hybrid perovskites from tight binding modeling and NMR spectroscopyPoster de conférence hal-01447403v1 |
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Insight into electronic and structural properties of CH3NH3PbX3 (X=Cl, Br, I) hybrid perovskites from tight binding modeling and NMR spectroscopy2nd International Conference on Perovskite Solar Cells and Optoelectronics (PSCO-2016), Sep 2016, Genova, Italy. 2016
Poster de conférence
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GaAsPN Single and Tandem Solar Cells on Silicon19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
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GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. 2016
Poster de conférence
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Super lattice band diagram calculation using 30 band k.p methodWorkshop on Empirical Methods in Semiconductor Nano-Structures Design and Modelling, Jun 2010, Manchester, United Kingdom
Poster de conférence
hal-00641218v1
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Chap. 14: Influence des contraintes sur les propriétés électroniques et optiques des semi-conducteursM. Mouis. Contraintes mécaniques en micro-nano-optoélectronique, Encyclopédie EGEM, Hermès, France, pp.379-441, 2006
Chapitre d'ouvrage
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Modélisation physique de la structure électronique, du transport et de l'ionisation par choc dans les matériaux IV-IV massifs, contraints et dans les puits quantiquesMatière Condensée [cond-mat]. Université Paris Sud - Paris XI, 2004. Français. ⟨NNT : ⟩
Thèse
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