SD
Sourav De
6
Documents
Publications
Publications
Insights into Oxygen Vacancy Effects on Ferroelectric Behavior of Hafnium Oxide: A ReviewPhysica Status Solidi A (applications and materials science), 2025, 222 (17), ⟨10.1002/pssa.202500376⟩ |
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Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computingJournal of Applied Physics, 2025, 138, pp.010701. ⟨10.1063/5.0278057⟩ |
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Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic ApplicationsESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France |
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Exploring the Potential of Hafnium Oxide-Based Ferroelectric Memories for Next-Generation Storage Class MemoriesElectron Device Technology and Manufacturing Conference, IEEE, Mar 2025, Hong Kong (China), China |
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Hafnium Oxide-Based Ferroelectric Memories: Applications and Future ProspectsNon-Volatile Memory and Selector Devices: Technology and Applications, In press |
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Direct Evidence of Interface-Driven Endurance Degradation in Hafnium-Oxide FeFETs: Stable Polarization Response of the Gate Stack in Degraded FeFETs2025 |
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