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Complete magnetization compensation in the intrinsic ferromagnetic semiconductor Gd x Sm 1 − x N
J. Miller
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Investigation of MoS2 growth on GaN/sapphire substrate using molecular beam epitaxy
Mohamed Al Khalfioui
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Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates
Masato Takiguchi
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Article dans une revue
hal-04489537
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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion
B. Damilano
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Article dans une revue
hal-04489504
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Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si$_x$N$_y$
B Damilano
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J. Brault
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P Ruterana
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Article dans une revue
hal-04248760
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Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN
Jackson Miller
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Article dans une revue
hal-04903745
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Descriptor engineering in machine learning regression of electronic structure properties for 2D materials
Minh Tuan Dau
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hal-04058161
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Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN
Caroline Elias
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hal-04240341
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Light Polarization in Tunnel Junction Injected UV Light‐Emitting Diodes
Jean-Yves Duboz
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Cynthia Kessaci
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Stéphane Vézian
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Article dans une revue
hal-03828269
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo
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Article dans une revue
hal-03467546
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Enhanced Sm spin projection in Gd x Sm 1 − x N
Jackson Miller
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Article dans une revue
hal-04903861
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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence
Benjamin Damilano
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Pierre Ruterana
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Nuño Amador-Méndez
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Article dans une revue
hal-03865257
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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo
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Sébastien Chenot
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Julien Brault
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Maud Nemoz
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Article dans une revue
hal-03741626
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Porous Nitride Light-Emitting Diodes
Nuño Amador-Mendez
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Stéphane Vézian
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Marie-Pierre Chauvat
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Magali Morales
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Article dans une revue
hal-03864353
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Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization
D. Cooper
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Article dans une revue
hal-03418879
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Bandwidth Unlimited Polarization-Maintaining Metasurfaces
Q. Song
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Article dans une revue
hal-03582572
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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
Thi Huong Ngo
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Rémi Comyn
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Sébastien Chenot
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Julien Brault
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Benjamin Damilano
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Article dans une revue
hal-03035072
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Bandwidth-unlimited polarization-maintaining metasurfaces
Q Song
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Science Advances , 2021
Article dans une revue
hal-03436097
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Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces
Qinghua Song
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Pin Chieh Wu
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Sébastien Chenot
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Virginie Brandli
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Article dans une revue
hal-03111022
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Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires
Kelly W Mauser
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Magdalena Solà-Garcia
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Matthias Liebtrau
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Benjamin Damilano
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Article dans une revue
hal-03418883
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Printing polarization and phase at the optical diffraction limit: near and far-field optical encryption
Qinghua Song
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Samira Khadir
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Stéphane Vézian
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Benjamin Damilano
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Article dans une revue
hal-03582590
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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction.
E Di Russo
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B Damilano
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Article dans une revue
hal-03411352
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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
E. Di Russo
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V Fan Arcara
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B. Damilano
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Ioanna Dimkou
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Article dans une revue
hal-03024837
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Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
Pierre-Marie Coulon
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Benjamin Damilano
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Stephane Vezian
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Tao Wang
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Article dans une revue
hal-03024881
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InGaN islands and thin films grown on epitaxial graphene
C Paillet
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C. Matei
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A. Michon
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Article dans une revue
hal-03024853
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Revealing topological phase in Pancharatnam-Berry metasurfaces using mesoscopic electrodynamics
Zhanjie Gao
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Sandeep Golla
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Rajath Sawant
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Vladimir Osipov
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Gauthier Briere
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Article dans une revue
hal-03582593
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Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces
Qinghua Song
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Arthur Baroni
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Rajath Sawant
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Peinan Ni
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Virginie Brandli
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Article dans une revue
hal-02635286
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Magnetoresistance of epitaxial GdN films
Tanmay Maity
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Harry Joseph Trodahl
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Simon Granville
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Stéphane Vézian
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Franck Natali
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Article dans une revue
hal-04903902
v1
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Lasing up to 380 K in a sublimated GaN nanowire
S. Sergent
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B. Damilano
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S. Vézian
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S. Chenot
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T. Tsuchizawa
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Article dans une revue
hal-03024869
v1
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Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics
Sylvain Sergent
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Benjamin Damilano
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Stephane Vezian
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Sébastien Chenot
,
Masato Takiguchi
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Article dans une revue
hal-03024899
v1
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Metasurface orbital angular momentum holography
Haoran Ren
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Gauthier Briere
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Xinyuan Fang
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Peinan Ni
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Rajath Sawant
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Article dans une revue
hal-02304950
v1
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Optimization and uncertainty quantification of gradient index metasurfaces
Nikolai Schmitt
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Niklas Georg
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Gauthier Brière
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Dimitrios Loukrezis
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Sébastien Héron
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Article dans une revue
hal-02433053
v1
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Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes
V. Fan Arcara
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B. Damilano
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G. Feuillet
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S. Vezian
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K. Ayadi
et al.
Article dans une revue
hal-02569339
v1
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Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
Benjamin Damilano
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Pierre-Marie Coulon
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Stephane Vézian
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Virginie Brandli
,
Jean-Yves Duboz
et al.
Article dans une revue
hal-02304928
v1
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Displacement Talbot Lithography for nano-engineering of III-nitride materials
Pierre-Marie Coulon
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Benjamin Damilano
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Blandine Alloing
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Pierre Chausse
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Sebastian Walde
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Article dans une revue
hal-03024884
v1
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An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces
Gauthier Brière
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Peinan Ni
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Sébastien Héron
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Sebastien Chenot
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Stephane Vézian
et al.
Article dans une revue
hal-02118940
v1
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Enhanced excitonic emission efficiency in porous GaN
Thi Huong Ngo
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Bernard Gil
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T. Shubina
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B. Damilano
,
Stephane Vezian
et al.
Article dans une revue
hal-01905654
v1
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Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate
Benjamin Damilano
,
Stéphane Vézian
,
Jean Massies
Article dans une revue
hal-03553871
v1
|
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Electron transport in heavily doped GdN
Tanmay Maity
,
Harry Joseph Trodahl
,
Franck Natali
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Benjamin John Ruck
,
Stéphane Vézian
Article dans une revue
hal-04903988
v1
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Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN
C.-M. Lee
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Julia Schacht
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Harry Warring
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Harry Joseph Trodahl
,
Benjamin John Ruck
et al.
Article dans une revue
hal-04903963
v1
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Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation
B. Damilano
,
S. Vézian
,
J. Massies
Article dans une revue
hal-03553879
v1
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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
A. Michon
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Antoine Tiberj
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S. Vezian
,
E. Roudon
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D. Lefebvre
et al.
Article dans une revue
hal-01200742
v1
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Role of magnetic polarons in ferromagnetic GdN
F. Natali
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B.J. Ruch
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H. J. Trodahl
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Do Le Binh
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S. Vézian
et al.
Article dans une revue
hal-01002353
v1
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Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC
Marc Portail
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A. Michon
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S. Vézian
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D. Lefebvre
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S. Chenot
et al.
Article dans une revue
istex
hal-00803559
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