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Switchable topological polar states in epitaxial BaTiO3 nanoislands on silicon
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Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice
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Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H + ions implanted LiTaO 3
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Article dans une revue
hal-03154232
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Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory
Gauthier Lefevre
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Article dans une revue
hal-03720298
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Structural and chemical investigation of interface related magnetoelectric effect in Ni/BiFe0.95Mn0.05O3 heterostructures
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hal-02070799
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Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy
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Article dans une revue
hal-01745004
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Nanoscale control of Si nanoparticles within a 2D hexagonal array embedded in SiO<sub>2</sub> thin films
Celia Castro
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Article dans une revue
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Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy
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Article dans une revue
hal-01720447
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Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography
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Article dans une revue
hal-01720446
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Studying Thin Ge films and Ge/GeO2 interfaces by means of raman–brillouin scattering
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Article dans une revue
hal-01720450
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Backside versus frontside advanced chemical analysis of high-k/metal gate stacks
E. Martinez
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hal-01720448
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Atomic-layer deposited thulium oxide as a passivation layer on germanium
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Article dans une revue
hal-01720449
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A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications
Lucie Mazet
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Article dans une revue
hal-01489400
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Atomic scale characterization of SiO<inf>2</inf>/4H-SiC interfaces in MOSFETs devices
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Article dans une revue
hal-01720451
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Raman-Brillouin scattering from a thin Ge layer: Acoustic phonons for probing Ge/GeO<inf>2</inf> interfaces
Lama Yaacoub
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N.N. Ovsyuk
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Article dans une revue
hal-01720453
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Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxy
Lucie Mazet
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hal-01489886
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Silicon crystallization in nanodot arrays organized by block copolymer lithography
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Article dans une revue
hal-01718638
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In-plane organization of silicon nanocrystals embedded in SiO2 thin films
Celia Castro
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Article dans une revue
hal-01745011
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Quantumdots for memory applications
P. Dimitrakis
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Article dans une revue
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hal-01745006
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Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts
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Article dans une revue
hal-01745012
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Fabrication of well-ordered arrays of silicon nanocrystals using a block copolymer mask
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Article dans une revue
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hal-01745010
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Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon
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Article dans une revue
hal-01745007
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Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
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Article dans une revue
hal-01745018
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Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
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Article dans une revue
hal-01745014
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Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 272, pp.53-56. ⟨10.1016/j.nimb.2011.01.031⟩
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hal-01745016
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Extraction of the characteristics of Si nanocrystals by the charge pumping technique
Régis Diaz
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Article dans une revue
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hal-01745017
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Si and Ge nanocrystals for future memory devices
Caroline Bonafos
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Article dans une revue
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hal-01745013
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Silicon nanoclusters embedded into oxide host for non-volatile memory applications
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ECS Transactions, 2011, 35, pp. 37-45
Article dans une revue
hal-00647540
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The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer deposition
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Article dans une revue
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hal-01745020
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Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001)
C. Wiemer
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M. Perego
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Article dans une revue
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hal-01745019
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Calculated and experimental electron energy-loss spectra of La2O3, La(OH)(3), and LaOF nanophases in high permittivity lanthanum-based oxide layers
Lionel Calmels
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Pierre-Eugène Coulon
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Sylvie Schamm-Chardon
Article dans une revue
hal-01745023
v1
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Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics
Sylvie Schamm-Chardon
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L. Lamagna
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C. Wiemer
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Article dans une revue
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hal-01745022
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The energy band alignment of Si nanocrystals in SiO2
G. Seguini
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Sylvie Schamm-Chardon
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P. Pellegrino
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M. Perego
Article dans une revue
hal-01745021
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Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors
Magali Brunet
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Article dans une revue
hal-01443083
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O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates
L. Lamagna
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Article dans une revue
hal-01745024
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Ultra-low energy ion implantation of Si into HfO2 and HfSiO-based structures for non volatile memory applications
Caroline Bonafos
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F. Gloux
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Materials Research Society Symposia Proceedings, 2010, 1250, p. G01-07
Article dans une revue
hal-00562346
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Dielectric properties of Er-doped HfO2 (Er ~ 15%) grown by atomic layer deposition for high-kappa gate stacks
C. Wiemer
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M. Perego
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Article dans une revue
hal-01745025
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ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices
Karolina Galicka-Fau
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Article dans une revue
hal-01745028
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Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materials
Magali Brunet
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Article dans une revue
hal-01443057
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Temperature-dependent low electric field charging of Si nanocrystals embedded within oxide-nitride-oxide dielectric stacks
N. Nikolaou
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Article dans une revue
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hal-01745029
v1
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Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks
Sylvie Schamm-Chardon
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S. Miao
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Article dans une revue
hal-01745032
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Structural and optical properties of Si nanocrystals embedded in SiO2/SiNx multilayers
F. Delachat
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Physica E: Low-dimensional Systems and Nanostructures, 2009, 41, pp. 994-997
Article dans une revue
hal-00408918
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Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)
L. Lamagna
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C. Wiemer
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S. Baldovino
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A. Molle
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M. Perego
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Article dans une revue
hal-01745026
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Ultra-low energy ion implantation of Si into HfO<sub>2</sub>-based structures for non volatile memory applications
Pierre-Eugène Coulon
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K. Chan Shin Yu
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Gérard Benassayag
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Materials Research Society Symposia Proceedings, 2009, 1160, pp.H01-03
Article dans une revue
hal-00697605
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Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks
D. Tsoutsou
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A. Molle
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Article dans une revue
hal-01745031
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Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications
P. Dimitrakis
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A. Mouti
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Caroline Bonafos
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Sylvie Schamm-Chardon
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Gérard Benassayag
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Article dans une revue
hal-01745030
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Structural and optical properties of high density Si-ncs synthezised in SiNx:H by remote PECVD and annealing
Marzia Carrada
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A. Amann
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Mater. Sci. Eng. B, 2008, 147, pp.218-221
Article dans une revue
hal-00250450
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Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing
D. Tsoutsou
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G. Scarel
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A. Debernardi
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S. C. Capelli
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S. N. Volkos
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Article dans une revue
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hal-01745039
v1
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Silicon nanoparticles synthesized in SiO2 pockets by stencil-masked low energy ion implantation and thermal annealing
Jérémie Grisolia
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C. Dumas
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Gérard Benassayag
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Caroline Bonafos
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Sylvie Schamm-Chardon
et al.
Article dans une revue
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hal-01745035
v1
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Structural and optical properties of high density Si-ncs synthesized in SiNx : H by remote PECVD and annealing
Marzia Carrada
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A. Zerga
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A. Amann
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J. J. Grob
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J. P. Stoquert
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Article dans une revue
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hal-01745037
v1
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Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS
Sylvie Schamm-Chardon
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Caroline Bonafos
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H. Coffin
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Nikolay Cherkashin
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Marzia Carrada
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Article dans une revue
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hal-01736064
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KFM detection of charges injected by AFM into a thin SiO2 layer containing Si nanocrystals
C. Dumas
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Laurence Ressier
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Jérémie Grisolia
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Arnaud Arbouet
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Vincent Paillard
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Article dans une revue
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hal-01745038
v1
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Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich SiO2 layers
O. Jambois
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Josep Carreras
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A. Perez-Rodriguez
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B. Garrido
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Caroline Bonafos
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Article dans une revue
hal-01745044
v1
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Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer
C. Dumas
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Jérémie Grisolia
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Gérard Benassayag
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Caroline Bonafos
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Sylvie Schamm-Chardon
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Article dans une revue
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hal-01745045
v1
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Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation
V. Ioannou-Sougleridis
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P. Dimitrakis
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V.Em. Vamvakas
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P. Normand
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Caroline Bonafos
et al.
Article dans une revue
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hal-01736069
v1
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Preparation and microstructures of BaTi1-xZrxO3 hetero-epitaxial thin films on SrTiO3 substrates
D. Wu
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Philippe Sciau
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Sylvie Schamm-Chardon
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F. Gloux
,
M. Varela Fernandez
Article dans une revue
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hal-01745042
v1
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Photoluminescence spectroscopy and transport electrical measurements reveal the quantized features of Si nanocrystals embedded in an ultra thin SiO2 layer
C. Dumas
,
Jérémie Grisolia
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Marzia Carrada
,
Arnaud Arbouet
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Vincent Paillard
et al.
Article dans une revue
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hal-01745040
v1
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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks
V. Ioannou-Sougleridis
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P. Dimitrakis
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V.Em. Vamvakas
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P. Normand
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Caroline Bonafos
et al.
Article dans une revue
hal-01736066
v1
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Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis
V. Ioannou-Sougleridis
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P. Dimitrakis
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V. Em Vamvakas
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P. Normand
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Caroline Bonafos
et al.
Article dans une revue
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hal-01745043
v1
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Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation
Alain Claverie
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Caroline Bonafos
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Gérard Benassayag
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Sylvie Schamm-Chardon
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Nikolay Cherkashin
et al.
Defect Diffus. Forum, 2006, 258-260, pp.531-541
Article dans une revue
hal-00204809
v1
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White electroluminescence from C- and Si-rich thin silicon oxides
O. Jambois
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B. Garrido
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P. Pellegrino
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Josep Carreras
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A. Perez-Rodriguez
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Article dans une revue
hal-01745047
v1
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Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers
H. Coffin
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Caroline Bonafos
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Sylvie Schamm-Chardon
,
Nikolay Cherkashin
,
Gérard Benassayag
et al.
Article dans une revue
hal-01736074
v1
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Photoluminescence characterization of few-nanocrystals electronic devices
Arnaud Arbouet
,
Marzia Carrada
,
François Demangeot
,
Vincent Paillard
,
Gérard Benassayag
et al.
Article dans une revue
hal-01745048
v1
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Photoluminescence characterization of few-nanocrystals electronic devices
A. Arbouet
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M. Carrada
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F. Demangeot
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V. Paillard
,
Gérard Benassayag
et al.
Article dans une revue
hal-04811979
v1
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Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications
Caroline Bonafos
,
H. Coffin
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Sylvie Schamm-Chardon
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Nikolay Cherkashin
,
Gérard Benassayag
et al.
Article dans une revue
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hal-01736088
v1
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Fabrication of nanocrystal memories by ultra low energy ion implantation
Nikolay Cherkashin
,
Caroline Bonafos
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H. Coffin
,
Marzia Carrada
,
Sylvie Schamm-Chardon
et al.
Article dans une revue
hal-01736090
v1
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Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation
J Grisolia
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M Shalchian
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Gérard Benassayag
,
H. Coffin
,
Caroline Bonafos
et al.
Article dans une revue
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hal-01745050
v1
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Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications
H. Coffin
,
Caroline Bonafos
,
Sylvie Schamm-Chardon
,
Marzia Carrada
,
Nikolay Cherkashin
et al.
Article dans une revue
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hal-01736081
v1
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Elaboration by spray pyrolysis and characterization in the VUV range of phosphor particles with spherical shape and micronic size
Nicolas Joffin
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Bruno Caillier
,
Jeannette Dexpert-Ghys
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Marc Verelst
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Guy Baret
et al.
Article dans une revue
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hal-00359209
v1
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The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation
J Grisolia
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M Shalchian
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Gérard Benassayag
,
H. Coffin
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Caroline Bonafos
et al.
Article dans une revue
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hal-01745049
v1
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The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation
Jérémie Grisolia
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M Shalchian
,
Gérard Benassayag
,
H Coffin
,
Caroline Bonafos
et al.
Article dans une revue
istex
hal-04811982
v1
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Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology
T. Müller
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K.-H. Heinig
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W. Möller
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Caroline Bonafos
,
H. Coffin
et al.
Applied Physics Letters, 2004, 85 (12), pp.2373-2375
Article dans une revue
hal-01736097
v1
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Study of the chemical and structural organization of SIPOS films at the nanometer scale by TEM-EELS and XPS
Sylvie Schamm-Chardon
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R Berjoan
,
P Barathieu
Article dans une revue
istex
hal-01745051
v1
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Study of the dielectric properties near the band gap by VEELS: gap measurement in bulk materials
Sylvie Schamm-Chardon
,
G. Zanchi
Article dans une revue
istex
hal-01745053
v1
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Multi-scale analysis of the dielectric properties and structure of resin/carbon-black nanocomposites
S. Paciornik
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O. da Fonseca Martins Gomes
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Arnaud Delarue
,
Sylvie Schamm-Chardon
,
Dominique Jeulin
et al.
Article dans une revue
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hal-00166093
v1
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Thermodynamic study and characterization of low pressure chemically vapor deposited silicon oxynitride films from tetraethylorthosilicate, dichlorosilane and ammonia gas mixtures
V Vamvakas
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D Davazoglou
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R Berjoan
,
Sylvie Schamm-Chardon
,
Constantin Vahlas
Article dans une revue
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hal-01745054
v1
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Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology
T. Müller
,
K.-H. Heinig
,
Caroline Bonafos
,
H. Coffin
,
Nikolay Cherkashin
et al.
Article dans une revue
hal-01736111
v1
|
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Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures
V Vamvakas
,
R Berjoan
,
Sylvie Schamm-Chardon
,
D Davazoglou
,
Constantin Vahlas
Article dans une revue
istex
hal-01745057
v1
|
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VUV absorption coefficient measurements of borate matrices
B Moine
,
J Mugnier
,
D Boyer
,
R Mahiou
,
Sylvie Schamm-Chardon
et al.
Article dans une revue
istex
hal-01745055
v1
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Contamination and the quantitative exploitation of EELS low-loss experiments
Sylvie Schamm-Chardon
,
G. Zanchi
Article dans une revue
istex
hal-01745056
v1
|
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High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films
C Grigis
,
Sylvie Schamm-Chardon
,
Dominique Dorignac
Article dans une revue
istex
hal-01745058
v1
|
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Element and phase identification via fine structure analysis in EELS: application to MOCVD-Y1Ba2Cu3O7-delta thin films
C Grigis
,
Sylvie Schamm-Chardon
Article dans une revue
istex
hal-01745060
v1
|
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Studies of LPCVD Al–Fe–O deposits by XPS, EELS and Mössbauer spectroscopies
C Labatut
,
R Berjoan
,
B Armas
,
Sylvie Schamm-Chardon
,
Jean Sévely
et al.
Article dans une revue
istex
hal-01745059
v1
|
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Structural characterization of amorphous SiCxNy chemical vapor deposited coatings
A Bendeddouche
,
R Berjoan
,
E Beche
,
T Merlemejean
,
Sylvie Schamm-Chardon
et al.
Article dans une revue
hal-01745062
v1
|
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HREM Characterization of Interfaces in Thin MOCVD Superconducting Films
Dominique Dorignac
,
Sylvie Schamm-Chardon
,
Ch. Grigis
,
J. Santiso
,
G. Garcia
et al.
Article dans une revue
jpa-00253779
v1
|
|
Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film
G. Garcia
,
J. Casado
,
J. Llibre
,
M. Doudkowski
,
J. Santiso
et al.
Article dans une revue
jpa-00253913
v1
|
|
Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2
F Loumagne
,
F Langlais
,
R Naslain
,
Sylvie Schamm-Chardon
,
Dominique Dorignac
et al.
Article dans une revue
istex
hal-01745064
v1
|
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Kinetic Processes in the CVD of SiC from CH3SiCl3-H2 in a Vertical Hot-Wall Reactor
F. Langlais
,
F. Loumagne
,
D. Lespiaux
,
Sylvie Schamm-Chardon
,
R. Naslain
Article dans une revue
istex
jpa-00253766
v1
|
|
Correlations between gas phase supersaturation, nucleation process and physico-chemical characteristics of silicon carbide deposited from Si-C-H-Cl system on silica substrates
D Lespiaux
,
F Langlais
,
R Naslain
,
Sylvie Schamm-Chardon
,
Jean Sévely
Article dans une revue
istex
hal-01745067
v1
|
|
SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)4-NH3-H2 System
A Bendeddouche
,
R Berjoan
,
E Beche
,
Sylvie Schamm-Chardon
,
Virginie Serin
et al.
Article dans une revue
hal-01745065
v1
|
|
Chlorine and oxygen inhibition effects in the deposition of SiC-based ceramics from the Si-C-H-Cl system
D Lespiaux
,
F Langlais
,
R Naslain
,
Sylvie Schamm-Chardon
,
Jean Sévely
Article dans une revue
istex
hal-01745066
v1
|
|
Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film
G Garcia
,
J Casado
,
J Llibre
,
M Doudkowski
,
J Santiso
et al.
Journal de Physique IV Proceedings, 1995, Proceedings of the Tenth European Conference on Chemical Vapour Deposition, 5 (C5), pp.439-445. ⟨10.1051/jphyscol:1995551⟩
Article dans une revue
hal-01745063
v1
|
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SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)4-NH3-H2 System
A. Bendeddouche
,
R. Berjoan
,
E. Bêche
,
Sylvie Schamm-Chardon
,
V. Serin
et al.
Article dans une revue
jpa-00253957
v1
|
|
Y2O3 nanoprecipitates in YBCO thin films obtained by thermal- MOCVD
J Santiso
,
A Figueras
,
Sylvie Schamm-Chardon
,
C Grigis
,
Dominique Dorignac
et al.
Article dans une revue
istex
hal-01745068
v1
|
|
Y2O3 nanoprecipitate/YBaCuO matrix interfaces: HREM study
Dominique Dorignac
,
Sylvie Schamm-Chardon
,
C Grigis
,
Jean Sévely
,
J Santiso
et al.
Article dans une revue
istex
hal-01745069
v1
|
|
HREM identification of "one-dimensionally-disordered" polytypes in the SiC (CVI) matrix of SiC/SiC composites
Sylvie Schamm-Chardon
,
Annie Mazel
,
Dominique Dorignac
,
Jean Sévely
Article dans une revue
hal-01745071
v1
|
|
Compatibility between SiC filaments and aluminim in the K2ZrF6 wetting process and its effect on filament strength
Sylvie Schamm-Chardon
,
Y Lepetitcorps
,
R Naslain
Article dans une revue
istex
hal-01745072
v1
|
|
The K2ZrF6 wetting process: Effect of surface chemistry on the ability of a SiC-Fiber preform to be impregnated by aluminum
Sylvie Schamm-Chardon
,
R Fedou
,
Jp Rocher
,
Jm Quenisset
,
R Naslain
Metallurgical Transactions a-Physical Metallurgy and Materials Science, 1991, 22 (9), pp.2133-2139. ⟨10.1007/BF02669881⟩
Article dans une revue
istex
hal-01745070
v1
|
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Partial phase diagram of the ternary reciprocal system KF-AlF3-Al2O3-K2O
Sylvie Schamm-Chardon
,
L Rabardel
,
J Grannec
,
R Naslain
,
C Bernard
et al.
Article dans une revue
istex
hal-01745073
v1
|
|
Liquid-process production of composite-materials with aluminum-based matrix reinforced by fibers of carbon or silicon-carbide
Sylvie Schamm-Chardon
,
Jp Rocher
,
R Naslain
Memoires et Etudes Scientifiques de la revue de Metallurgie, 1988, 85 (9), pp.483
Article dans une revue
hal-01745074
v1
|