Thierry Bretagnon
Publications
Publications
Phase transition of indirect excitons in GaN quantum wells.International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan |
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Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France |
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Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico |
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Indirect Excitons in Group III-Nitride-Based Quantum Wells.CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy |
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Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells.International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany |
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Indirect excitons in polar GaN/(AlGa)N quantum wellsInternational school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia |
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On the nature of light emission in polar GaN/(AlGa)N quantum wellsInternational Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece |
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Anisotropic optical properties of a homoepitaxial (Zn, Mg)O/ZnO quantum well grown on a-plane ZnO substratePHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, Paris, France. pp.598-601, ⟨10.1002/pssc.201510238⟩ |
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Indirect excitons in polar group III nitride quantum wells.8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova |
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Transport of indirect excitons in GaN quantum wells.International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States |
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Indirect excitons in AlGaN/GaN polar quantum wells.17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan |
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Indirect excitons in wide band gap semiconductors.International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy |
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, François Dubin, ICFO (ES); Vittorio Pellegrini, Scuola Normale Superiore & IIT (IT); Aron Pinczuk, Columbia University (USA); David Ritchie, University of Cambridge (UK); Massimo Rontani, Cnr Nano (IT); Thomas Satzoukidis, Scuola Normale Superiore (IT); Masha Vladimirova, CNRS (FR), Sep 2015, Pise, Italy |
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Bernard Gil, Jun 2014, Montpellier, France |
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Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDsSPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX, Feb 2014, san francisco, United States. pp.89860Z, ⟨10.1117/12.2036924⟩ |
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Excitonic recombination dynamics in non-polar and semi-polar AlGaN/GaN multiple QWs5th International symposium on growth on nitrides, May 2014, France |
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Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWsSPIE PHOTONIC WEST, Feb 2014, sann francisco, United States. pp.Proceedings of SPIE 8986, Article Number: 89860L, ⟨10.1117/12.2036984⟩ |
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Time-resolved photuminescence spectroscopy investigations of nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells.SPIE-OPTO-Photonic West. "Oxyde-based Materials and Devices"., Jan 2012, San Francisco, United States |
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Optical investigation of non polar ZnO/(Zn,Mg)O quantum wells11th International Conference on Light-Matter Coupling in Nanostructures (PLMCN11), Apr 2011, Berlin, Germany. pp.1225, ⟨10.1002/pssc.201100263⟩ |
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Optical properties of high quality factor optical resonators incorporating GaN/AlN Quantum Dots and Wells11th International Conference on Light-Matter Coupling in Nanostructures (PLMCN11), Apr 2011, Berlin, Germany |
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Optical investigations of non-polar homo-epitaxial ZnO/(Zn,Mg)O quantum wells2ème Colloque National ZnO, Jun 2011, PARIS, France |
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High quality factor of AlN microdisks embedding GaN quantum dotsInternational Workshop on Nitride Semiconductors (IWN2010), Sep 2010, Tampa, United States. pp.2328-2330, ⟨10.1002/pssc.201001161⟩ |
Photonic cavities embedding GaN quantum dots for the UV spectral range3N Workshop Nanolum, Jun 2010, Porquerolles, France |
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Strong exciton-photon coupling in ZnO microcavities : Promoting polariton physics up to 300K9th Japan-France Workshop on Nanomaterials, Nov 2010, Toulouse, France |
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Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-WellsPHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, Jul 2008, Rio de Janeiro, Brazil. pp.191-192, ⟨10.1063/1.3295362⟩ |
Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryJournées Boîtes Quantiques, Jun 2009, Grenoble, France |
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Interplay between bragg- and cavity-mode polaritons in a ZnO microcavityPhysics of Light-Matter Coupling in Nanostructures (PLMCN9), Apr 2009, Lecce, Italy |
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Effect of the internal electric field on excitonic transitions in ZnO/(Zn,Mg)O quantum wells.9th Physics of Light-Matter Coupling and Nanostructures - PLMCN., Apr 2009, Lecce, Italy |
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Conference on LightMatter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan |
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theoryInternational Workshop on Nitride Semiconductors (IWN2008), Oct 2008, Montreux, Switzerland |
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Etude du couplage fort exciton-photon dans les microcavités massives ZnO par photoluminescence11ème Journées de la Matière Condensée (JMC11), Aug 2008, Strasbourg, France |
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Emission polarisée d'une boîte quantique unique GaN/AlN : expérience et théorie11ème Journées de la Matière Condensée, Aug 2008, Strasbourg, France |
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Internal electric field in ZnO/Zn1-xMgxO in single quantum wells.Fifth International Workshop on Zinc Oxide and Related Materials., Sep 2008, Ypsilanti, Michigan., United States |
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Which quasi-particles in wide band gap bulk microcavities ?8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), Apr 2008, Tokyo, Japan |
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Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE), Mar 2007, Grenade, Spain |
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Synthes de nanofils de ZnO dans des matériaux poreux ordonnés: experience et simulation moléculaireMatériaux 2006, Nov 2007, Dijon, France |
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Linear polarization of the emission of a single polar GaN/AlN quantum dot7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States |
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Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells6th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN 2006), J. Christen, Sep 2006, Magdeburg, Germany. pp.352, ⟨10.1016/j.spmi.2007.03.030⟩ |
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Radiative lifetime in wurtzite GaN/AlN quantum dots.International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩ |
Morphology control of ZnO nanomaterials using double hydrophilis block polymers2007 MRS fall meeting, Nov 2007, Boston, United States. pp.1 |
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Optical properties of ZnO nanorods and nanowiresE-MRS Spring Meeting, May 2005, Strasbourg, France. pp.358, ⟨10.1016/j.spmi.2005.08.079⟩ |
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Contrôle de la croissance de nanomatériaux d'oxyde de zinc par des copolymères diblocs hydrophiles.Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France |
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Polar and non-polar ZnO/ZnMgO quantum well heterostructuresInternational Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France |
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Study of Sharp Photoluminescence Spectra of Individual GaN/AlN Quantum Dots. Spectral Diffusion Effects.International Workshop on Nitrides Semiconductors (IWN), Oct 2006, Kyoto, Japan |
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Morphology Control of ZnO Nanomaterials using Double Hydrophilic Block CopolymersMRS Fall Meeting, Dec 2005, Boston, United States. pp.Rb15-05.1 |
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Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wellsInternational Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials, Jul 2005, Singapour, Singapore. pp.12-15, ⟨10.1016/j.jcrysgro.2005.10.034⟩ |
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Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots.6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany |
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Synthèse de nanofils de ZnO dans des Matériaux Poreux Ordonnés: Experience et Simulation Moléculaire.Matériaux 2006, Fédération Française des Matériaux, Nov 2006, Dijon, France |
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Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5). , Jun 2005, Glasgow, United Kingdom. pp.2598-2603, ⟨10.1002/pssa.200562030⟩ |
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Time resolved photoluminescence of ZnO / (Zn,Mg)O quantum wells. Internal electric field effects.E-MRS Spring Meeting - Symposium G : ZnO and Related Materials., May 2005, Strasbourg, France |
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Longitudinal-optical phonon broadening due to nitrogen atom incorporation in InGaAsN/GaAs quantum wells5th International Conference on Light–Matter Coupling in Nanostructures (PLMCN5)., Jun 2005, Glasgow, United Kingdom. pp.3887, ⟨10.1002/pssc.200562039⟩ |
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩ |
Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France |
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Carrier recombination processes in GaAsN: from the dilute limit to alloyingE-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩ |
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Evidence de l'interaction dipôle-dipôle dans la photoluminescence résolue en temps des boîtes quantiques GaN/AlN.Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France |
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Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillarsEuropean Materials Research Society 2004, Symposium L. InN, GaN, AlN and Related Materials, their Heterostructures and Devices., European Materials Research Society, May 2004, Strasbourg, France. pp.783-790, ⟨10.1016/j.spmi.2004.09.034⟩ |
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Optical properties of GaN/AlN quantum boxes under high photo-excitation5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩ |
Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩ |
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Positron lifetime spectroscopy of n-type and p-type porous siliconE-MRS Spring Conf., 1994, Strasbourg, France |
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Positron annihilation investigation of porous siliconICSMM-7, 1994, Banff, Canada |
On the nature of light emission in polar GaN/(AlGa)N quantum wells.12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France. |
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.Condensed Matter in Paris – CMD25 – JMC14. , Aug 2014, Paris, France. |
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.Compound Semiconductor Week 2014, May 2014, Montpellier, France. |
Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14, May 2013, Hersonissos, Crète, Greece. |
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Optical properties of a hybrid nitride-ZnO microcavity.SPIE-OPTO-Photonic West. "Gallium Nitride Materials & Devices VII"., Jan 2012, San Francisco, United States |
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Strong coupling of multiple branches polariton in a ZnO microcavity.Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain |
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Which quasi-particle in wide band gap bulk microcavities?2nd International School on Nanophotonics , Sep 2007, Maratea, Italy. |
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ZnO / (Zn,Mg)O Quantum Wells : a Time Resolved Photoluminescence StudyInternational Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06., May 2006, Montpellier, France |
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Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. |
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Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron-hole dipoleWolfgang Jantsch; Friederich Schafler. 28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria. AIP Publishing, AIP Conference Proceedings, 893, pp.941, 2007, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. ⟨10.1063/1.2730203⟩ |
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Malices et fourberies des boîtes quantiques GaN/AlN.Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France. |
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Dynamique de recombinaison des porteurs dans des puits quantiques GaInAsN/GaAs.9èmes Journées de la Matière Condensée, Aug 2004, Nancy, France |
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Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland |
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Carrier recombination dynamics in GaN/AlN quantum dots.EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France |