Thomas Tillocher

178
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Publications

Publications

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Cryogenic cyclical etching of Si using CF$_4$ plasma passivation steps: The role of CF radicals

Jack Nos , Sylvain Iséni , Martin Kogelschatz , Gilles Cunge , Philippe Lefaucheux et al.
Applied Physics Letters, 2025, Featured Collection, 126 (3), pp.031602. ⟨10.1063/5.0245217⟩
Article dans une revue hal-04905588 v1

Cryogenic etching of SiO x F y and SiO 2 in SF 6 /H 2 plasma

Rémi Dussart , T. Tillocher , L. Becerra , P. Lefaucheux , L. Overzet
Japanese Journal of Applied Physics, 2025, 64 (5), pp.05SP01. ⟨10.35848/1347-4065/adcbb3⟩
Article dans une revue hal-05141947 v1

Cryogenic atomic layer etching of SiO 2 based on cyclic CF 4 /Ar plasma

Madjid Adjabi , Thomas Tillocher , Philippe Lefaucheux , Eva Kovacevic , Rémi Dussart
Japanese Journal of Applied Physics, 2025, 64 (6), pp.06SP19. ⟨10.35848/1347-4065/add7e5⟩
Article dans une revue hal-05141960 v1

Evaluation of Bosch processing and C4F 8 plasma deposition at cryogenic temperatures

Jack Nos , Rémi Dussart , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel
Journal of Micromechanics and Microengineering, 2024, 34 (10), pp.105011. ⟨10.1088/1361-6439/ad7a08⟩
Article dans une revue hal-04824249 v1

Atomic layer etching of gallium nitride using fluorine-based chemistry

Lamiae Hamraoui , Tinghui Zhang , Angela Crespi , Philippe Lefaucheux , Thomas Tillocher et al.
Journal of Vacuum Science & Technology A, 2023, 41 (3), pp.032602. ⟨10.1116/6.0002452⟩
Article dans une revue hal-04075309 v1
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Quasi In Situ XPS on a SiO x F y Layer Deposited on Silicon by a Cryogenic Process

G. Antoun , A. Girard , T. Tillocher , P. Lefaucheux , J. Faguet et al.
ECS Journal of Solid State Science and Technology, 2022, 11 (1), pp.013013. ⟨10.1149/2162-8777/ac4c7d⟩
Article dans une revue hal-03565995 v1
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Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF 4 /O 2 and Ar plasmas

Gaelle Antoun , Thomas Tillocher , Aurélie Girard , Philippe Lefaucheux , J. Faguet et al.
Journal of Vacuum Science & Technology A, 2022, 40 (5), pp.052601. ⟨10.1116/6.0001885⟩
Article dans une revue hal-03772077 v1
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Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching

Rim Ettouri , Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Vincent Fernandez et al.
Surface and Interface Analysis, 2022, 54 (2), pp.134-147. ⟨10.1002/sia.7030⟩
Article dans une revue hal-03434304 v1
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Comparison between Bosch and STiGer Processes for Deep Silicon Etching

Thomas Tillocher , Jack Nos , Gaëlle Antoun , Philippe Lefaucheux , Mohamed Boufnichel et al.
Micromachines, 2021, 12 (10), pp.1143. ⟨10.3390/mi12101143⟩
Article dans une revue hal-03359000 v1
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Mechanism understanding in cryo atomic layer etching of ­SiO<sub>2</sub> based upon C<sub>4</sub>F<sub>8</sub> physisorption

Gaelle Antoun , Thomas Tillocher , Philippe Lefaucheux , Jacques Faguet , Kaoru Maekawa et al.
Scientific Reports, 2021, 11 (1), pp.357. ⟨10.1038/s41598-020-79560-z⟩
Article dans une revue hal-03118852 v1

Cryo atomic layer etching of SiO 2 by C F8 physisorption followed by Ar plasma

Gaelle Antoun , Philippe Lefaucheux , Thomas Tillocher , Rémi Dussart , Kumiko Yamazaki et al.
Applied Physics Letters, 2019, 115 (15), pp.153109. ⟨10.1063/1.5119033⟩
Article dans une revue hal-02311503 v1

The role of physisorption in the cryogenic etching process of silicon

Gaelle Antoun , Rémi Dussart , Thomas Tillocher , Philippe Lefaucheux , Christophe Cardinaud et al.
Japanese Journal of Applied Physics, 2019, 58 (SE), pp.SEEB03. ⟨10.7567/1347-4065/ab1639⟩
Article dans une revue hal-02139391 v1

Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C

Romain Chanson , Liping Zhang , Sergej Naumov , Yuri Mankelevich , Thomas Tillocher et al.
Scientific Reports, 2018, 8, pp.1886. ⟨10.1038/s41598-018-20099-5⟩
Article dans une revue hal-01696587 v1

High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films

Mukesh Kulsreshath , Alexane Vital , Philippe Lefaucheux , Christophe Sinturel , Thomas Tillocher et al.
Micro and Nano Engineering, 2018, 1, pp.42-48. ⟨10.1016/j.mne.2018.10.007⟩
Article dans une revue hal-02267745 v1

The effect of SF 6 addition in a Cl 2 /Ar inductively coupled plasma for deep titanium etching

Edouard Laudrel , Thomas Tillocher , Yannick Meric , Philippe Lefaucheux , Bertrand Boutaud et al.
Journal of Micromechanics and Microengineering, 2018, 28 (5), ⟨10.1088/1361-6439/aaafe7⟩
Article dans une revue hal-01735469 v1
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Morphology control in thin films of PS: PLA homopolymer blends by dip-coating deposition

Alexane Vital , Marylène Vayer , Thomas Tillocher , Remi Dussart , Mohamed Boufnichel et al.
Applied Surface Science, 2017, 393, pp.127-133. ⟨10.1016/j.apsusc.2016.09.151⟩
Article dans une revue hal-01561189 v1

Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2 plasmas

Stefan Tinck , Thomas Tillocher , Violetta Georgieva , Rémi Dussart , Erik Neyts et al.
Plasma Processes and Polymers, 2017, 14 (9), pp.1700018. ⟨10.1002/ppap.201700018⟩
Article dans une revue hal-01577605 v1
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Novel Method Based on Spin-Coating for the Preparation of 2D and 3D Si-Based Anodes for Lithium Ion Batteries

Marie Gabard , Mustapha Zaghrioui , David Chouteau , Virginie Grimal , Thomas Tillocher et al.
ChemEngineering, 2017, Physical and Applied Chemistry of Novel Materials and Their Applications, 1 (1), pp.5. ⟨10.3390/chemengineering1010005⟩
Article dans une revue hal-01862635 v1
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Cryogenic plasma-processed silicon microspikes as a high-performance anode material for lithium ion-batteries

Joe Sakai , Erwann Luais , Jérôme Wolfman , Thomas Tillocher , Remi Dussart et al.
Journal of Applied Physics, 2017, 122 (15), pp.155103. ⟨10.1063/1.4997713⟩
Article dans une revue hal-01686032 v1
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Elucidating the effects of gas flow rate on an SF6 inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation

Stefan Tinck , Thomas Tillocher , Remi Dussart , Erik Neyts , Annemie Bogaerts
Journal of Physics D: Applied Physics, 2016, 49 (38), pp.385201. ⟨10.1088/0022-3727/49/38/385201⟩
Article dans une revue hal-01374746 v1

Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation

Liping Zhang , Jean-Francois de Marneffe , Floriane Leroy , Philippe Lefaucheux , Thomas Tillocher et al.
Journal of Physics D: Applied Physics, 2016, 49 (17), pp.175203. ⟨10.1088/0022-3727/49/17/175203⟩
Article dans une revue hal-01324407 v1

Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches

Wassim Kafrouni , Thomas Tillocher , Julien Ladroue , Philippe Lefaucheux , Mohamed Boufnichel et al.
Vacuum, 2016, 133, pp.90. ⟨10.1016/j.vacuum.2016.08.019⟩
Article dans une revue hal-01577601 v1

Polymer masks for structured surface and plasma etching

Alexane Vital , Marylène Vayer , Christophe Sinturel , Thomas Tillocher , Philippe Lefaucheux et al.
Applied Surface Science, 2015, 332, pp.237. ⟨10.1016/j.apsusc.2015.01.040⟩
Article dans une revue hal-01219273 v1
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Cryogenic etching of silicon with SF<sub>6</sub> inductively coupled plasmas: a combined modelling and experimental study

Stefan Tinck , Thomas Tillocher , Rémi Dussart , Annemie Bogaerts
Journal of Physics D: Applied Physics, 2015, 48, pp.155204. ⟨10.1088/0022-3727/48/15/155204⟩
Article dans une revue hal-01135854 v1

Modification of poly(styrene) thin films and enhancement of cryogenic plasma etching resistance by ruthenium tetroxide vapor staining

Alexane Vital , Marylène Vayer , Christophe Sinturel , Thomas Tillocher , Philippe Lefaucheux et al.
Polymer, 2015, 76, pp.123-130. ⟨10.1016/j.polymer.2015.08.062⟩
Article dans une revue hal-01228427 v1

Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas

Floriane Leroy , Liping Zhang , Thomas Tillocher , Koichi Yatsuda , Kaoru Maekawa et al.
Journal of Physics D: Applied Physics, 2015, 48, pp.435202. ⟨10.1088/0022-3727/48/43/435202⟩
Article dans une revue hal-01217648 v1

Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel
Journal of Physics D: Applied Physics, 2014, pp.123001. ⟨10.1088/0022-3727/47/12/123001⟩
Article dans une revue hal-00959819 v1

Alternated process for the deep etching of titanium

Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Remi Dussart
Journal of Micromechanics and Microengineering, 2014, 24, pp.075021. ⟨10.1088/0960-1317/24/7/075021⟩
Article dans une revue hal-01015146 v1

A novel amorphization-etch alternating process for Si(100)

Nasreddine Mekkakia Maaza , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson
Journal of Micromechanics and Microengineering, 2013, 23, pp.045023. ⟨10.1088/0960-1317/23/4/045023⟩
Article dans une revue hal-00831302 v1

Low Damage Cryogenic Etching of Porous Organosilicate Low-k Materials Using SF6/O2/SiF4

Liping Zhang , Rami Ljazouli , Philippe Lefaucheux , Thomas Tillocher , Remi Dussart et al.
ECS Journal of Solid State Science and Technology, 2013, 2 (6), pp.N131. ⟨10.1149/2.001306jss⟩
Article dans une revue hal-00831339 v1

Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film

Liping Zhang , Rami Ljazouli , Philippe Lefaucheux , Thomas Tillocher , Remi Dussart et al.
Electrochemical and Solid-State Letters, 2012, 2 (2), pp.N5. ⟨10.1149/2.007302ssl⟩
Article dans une revue hal-00831289 v1
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Breakdown study of dc silicon micro-discharge devices

Laurent Schwaederlé , Mukesh Kulsreshath , Lawrence J. Overzet , Philippe Lefaucheux , Thomas Tillocher et al.
Journal of Physics D: Applied Physics, 2012, 45, pp.065201. ⟨10.1088/0022-3727/45/6/065201⟩
Article dans une revue hal-00667649 v1

Study of dc micro-discharge arrays made in silicon using CMOS compatible technology

Mukesh Kulsreshath , Laurent Schwaederlé , Lawrence J. Overzet , Philippe Lefaucheux , Julien Ladroue et al.
Journal of Physics D: Applied Physics, 2012, 45, pp.285202. ⟨10.1088/0022-3727/45/28/285202⟩
Article dans une revue istex hal-00713105 v1

Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenches

Thomas Defforge , Gaël Gautier , Thomas Tillocher , Remi Dussart , François Tran-Van
Journal of Vacuum Science & Technology A, 2012, 30 (1), pp.010601. ⟨10.1116/1.3665217⟩
Article dans une revue hal-00655000 v1

Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects

Thomas Tillocher , Wassim Kafrouni , Julien Ladroue , Philippe Lefaucheux , Mohamed Boufnichel et al.
Journal of Micromechanics and Microengineering, 2011, 21, pp.085005. ⟨10.1088/0960-1317/21/8/085005⟩
Article dans une revue istex hal-00655002 v1

Boron acceptor concentration in diamond from excitonic recombination intensities

J. Barjon , T. Tillocher , N. Habka , O. Brinza , J. Achard et al.
Physical Review B, 2011, 83 (7), pp.073201. ⟨10.1103/PhysRevB.83.073201⟩
Article dans une revue hal-03575962 v1

Scalloping removal on DRIE via using low concentrated alkaline solutions at low temperature

Thomas Defforge , Xi Song , Gaël Gautier , Thomas Tillocher , Remi Dussart et al.
Sensors and Actuators A: Physical , 2011, 170 (1-2), pp.114. ⟨10.1016/j.sna.2011.05.028⟩
Article dans une revue istex hal-00655001 v1

n-Type CVD diamond: Epitaxy and doping

Marie-Amandine Pinault-Thaury , T. Tillocher , N. Habka , D. Kobor , F. Jomard et al.
Materials Science and Engineering: B, 2011, 176 (17), pp.1401-1408. ⟨10.1016/j.mseb.2011.02.015⟩
Article dans une revue istex hal-02442430 v1

Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth

Marie-Amandine Pinault-Thaury , T. Tillocher , D. Kobor , N. Habka , F. Jomard et al.
Journal of Crystal Growth, 2011, 335 (1), pp.31-36. ⟨10.1016/j.jcrysgro.2011.06.007⟩
Article dans une revue istex hal-02441128 v1
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Integrated micro-plasmas in silicon operating in helium

Remi Dussart , Lawrence J. Overzet , Philippe Lefaucheux , Thierry Dufour , Mukesh Kulsreshath et al.
The European Physical Journal D : Atomic, molecular, optical and plasma physics, 2010, 60, pp.601-608. ⟨10.1140/epjd/e2010-00272-7⟩
Article dans une revue hal-01303160 v2
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Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

Georges Frangieh , Marie-Amandine Pinault-Thaury , Julien Barjon , Thomas Tillocher , François Jomard et al.
Physica Status Solidi A (applications and materials science), 2009, Special Issue : Hasselt Diamond Workshop 2009 - SBDD XIV, 206 (9), pp.2000-2003. ⟨10.1002/pssa.200982223⟩
Article dans une revue istex hal-02442483 v1

Two Cryogenic Processes Involving SF6, O2, and SiF4 for Silicon Deep Etching

Thomas Tillocher , Remi Dussart , Lawrence J. Overzet , Xavier Mellhaoui , Philippe Lefaucheux et al.
Journal of The Electrochemical Society, 2008, 155 (3), pp.D187. ⟨10.1149/1.2826280⟩
Article dans une revue hal-00349343 v1

SO2 passivating chemistry for silicon cryogenic deep etching

Corinne Y. Duluard , Remi Dussart , Thomas Tillocher , Laurianne E. Pichon , Philippe Lefaucheux et al.
Plasma Sources Science and Technology, 2008, 17, pp.045008. ⟨10.1088/0963-0252/17/4/045008⟩
Article dans une revue istex hal-00349344 v1

The passivation layer formation in the cryo-etching plasma process

Remi Dussart , Xavier Mellhaoui , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel et al.
Microelectronic Engineering, 2007, 84, pp.1128. ⟨10.1016/j.mee.2007.01.048⟩
Article dans une revue istex hal-00365894 v1

Silicon cryo-etching of deep holes

Thomas Tillocher , Remi Dussart , Xavier Mellhaoui , Philippe Lefaucheux , Mohamed Boufnichel et al.
Microelectronic Engineering, 2007, 84, pp.1120. ⟨10.1016/j.mee.2007.01.148⟩
Article dans une revue istex hal-00365907 v1
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Oxidation threshold in silicon etching at cryogenic temperatures

Thomas Tillocher , Philippe Lefaucheux , Xavier Mellhaoui , Remi Dussart , Pierre Ranson et al.
Journal of Vacuum Science & Technology A, 2006, 24 (4), pp.1073. ⟨10.1116/1.2210946⟩
Article dans une revue hal-00365909 v1

SiOxFy passivation layer in silicon cryoetching

Xavier Mellhaoui , Rémi Dussart , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson et al.
Journal of Applied Physics, 2005, 98, pp.104901-10
Article dans une revue hal-00098638 v1

Atomic Layer Etching of SiO<sub>2</sub> using CF<sub>4</sub> plasma in deposition mode at cryogenic temperature

Madjib Adjabi , Jack Nos , Sylvain Iséni , Gilles Cunge , Martin Kogelschatz et al.
PLAsma THIN film International Union Meeting 2025 (PLATHINIUM 2025), Sep 2025, Antibes (France), France
Communication dans un congrès hal-05325597 v1

UV absorption spectroscopy to study the role of CF radicals during cryogenic etching of Si in CF<sub>4</sub> plasmas

Martin Kogelschatz , Jack Nos , Sylvain Iséni , Gilles Cunge , Philippe Lefaucheux et al.
Journées 2025 Groupement de Recherche (GdR) étude des milieux ionisés Plasmas froids créés par décharge et laser (EMILI), Oct 2025, Saint-etienne, France
Communication dans un congrès hal-05325839 v1

Cryo- Atomic Layer Etching of Si, SiO2 and Si3N4

Rémi Dussart , Thomas Tillocher , Gaelle Antoun , Jack Nos , Philippe Lefaucheux
ALD for Industry, Europäische Forschungsgesellschaft Dünne Schichten (EFDS), Mar 2025, Dresden (GERMANY), Germany
Communication dans un congrès hal-05142003 v1
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Tutorial lecture : The chemistry of cryogenic etching

Rémi Dussart , Thomas Tillocher , Loic Becerra , Philippe Lefaucheux
International Symposium on Plasma Chemistry, Université du Minnesota, Jun 2025, Minneapolis, United States
Communication dans un congrès hal-05142034 v1

Cryogenic ALE of SiO<sub>2</sub> using CF<sub>4</sub> plasma

Madjib Adjabi , Jack Nos , Sylvain Iséni , Gilles Cunge , Martin Kogelschatz et al.
AVS 25th International Conference on Atomic Layer Deposition (ALD 2025) featuring the 12th International Atomic Layer Etching Workshop (ALE 2025), Jun 2025, Jeju Island (South Korea), South Korea
Communication dans un congrès hal-05325605 v1

Cryogenic bosch process using CF<sub>4</sub> plasma in deposition regime

Thomas Tillocher , Jack Nos , Sylvain Iséni , Gilles Cunge , Martin Kogelschatz et al.
The International Plasma Technology Joint Conference 2025 (IPTJC2025), Jun 2025, New Taipei City - Taiwan, Taiwan
Communication dans un congrès hal-05325733 v1

SiC plasma etching technology processes for power and optoelectronic devices

Mihai Lazar , Nour Beydoun , Frédéric Marty , Elise Usureau , Enora Marion Vuillermet et al.
PESM 2024, IMEC Belgium, Jun 2024, Leuven (BE), Belgium
Communication dans un congrès hal-04797018 v1

Enhanced physisorption of CF radicals on Si surfaces cooled at cryogenic temperature and application to deep etching

Jack Nos , Sylvain Iséni , G. Cunge , M. Kogelschatz , Philippe Lefaucheux et al.
45th International Symposium on Dry Process (DPS2024), Nov 2024, Hokkaïdo, Japan
Communication dans un congrès hal-04805187 v1

Cryogenic etching of SiOxFy and SiO2 in SF6/H2 plasma

Remi Dussart , Lawrence J. Overzet , Philippe Lefaucheux , Thomas Tillocher
Dry Process Symposium, Nov 2024, New Chitose, Japan
Communication dans un congrès hal-04824284 v1

Physico-chemical mechanisms involved in SiF4/O2 plasma cryogenic deposition and etching

Rémi Dussart , Thomas Tillocher , Philippe Lefaucheux
PESM & PlaCEP, Jun 2024, Leuven, Belgium
Communication dans un congrès hal-04824287 v1

La gravure plasma, une étape critique dans la technologie SiC. Mécanismes physico-chimiques et applications

Mihai Lazar , Nour Beydoun , Frédéric Marty , Elise Usureau , Enora Vuillermet et al.
Journées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France
Communication dans un congrès hal-04799422 v1
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Plasma cryogenic etching processes: what are the mechanisms involved at very low temperature ?

Rémi Dussart , Thomas Tillocher , Gaelle Antoun , Jack Nos , Philippe Lefaucheux et al.
14th EU-Japan Joint Symposium on Plasma Processing (JSPP) 2023, Satoshi Hamaguchi, Apr 2023, Okinawa, Japan, Japan
Communication dans un congrès hal-04072312 v1

Evaluation of Bosch processing at cryogenic temperatures

Jack Nos , T. Tillocher , Philippe Lefaucheux , Rémi Dussart , Aurélie Girard et al.
Plasma Etch and Strip in Microelectronics, Jun 2023, Grenoble, France
Communication dans un congrès hal-04138955 v1
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Passivation mechanisms involved in cryo-etching processes

Rémi Dussart , Thomas Tillocher , Philippe Lefaucheux , Jack Nos , Gaelle Antoun et al.
ISPLASMA 2023 / ICPLANTS 2023, Mar 2023, Gifu, Japan
Communication dans un congrès hal-04038995 v1

SF6 and Ar plasma based atomic layer etching of Gallium Nitride (GaN)

Lamiae Hamraoui , Philippe Lefaucheux , Thomas Tillocher , Mohamed Boufnichel , Rémi Dussart
ALD/ALE 2022, Jun 2022, Ghent, Belgium
Communication dans un congrès hal-04511533 v1

Cryo-ALE of Si and SiO2 using SF6 Physisorption

Jack Nos , Gaelle Antoun , T. Tillocher , Philippe Lefaucheux , Rémi Dussart et al.
Plasma Cryogenic Etching Processing (PlaCEP), May 2022, Orleans, France
Communication dans un congrès hal-04138936 v1

SF6 Physisorption based cryo-ALE of silicon

Jack Nos , Gaelle Antoun , Thomas Tillocher , Philippe Lefaucheux , Aurélie Girard et al.
ALD-ALE, Jun 2022, Ghent, Belgium
Communication dans un congrès hal-04138943 v1

Titanium isotropic and anisotropic etching for MEMS applications

Rim Ettouri , Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Jodie Phung et al.
Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP 2021), Aug 2021, Paris, France
Communication dans un congrès hal-03388707 v1

Cryogenic etching applied to next generation interconnects

Rémi Dussart , Thomas Tillocher , Philippe Lefaucheux
2021 Virtual MRS spring meeting, MRS, Apr 2021, Seattle (Virtual meeting), United States
Communication dans un congrès hal-03280129 v1

Aspect-Ratio-Dependent Etch effects in Titanium Deep Reactive Ion Etching

Rim Ettouri , Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Jodie Phung et al.
PLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France
Communication dans un congrès hal-03389062 v1

Anisotropic Reactive Ion Etching of Titanium Using SF6/O2/Ar plasma

Rim Ettouri , Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Hadrien Philippe et al.
47th International Conference on Micro and Nano Engineering (MNE), Sep 2021, Turin, Italy
Communication dans un congrès hal-03389072 v1

Atomic Layer Etching of Gallium Nitride (GaN) using fluorinated chemistry

Lamiae Hamraoui , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart , Mohamed Boufnichel
42nd International Symposium on Dry Process, Nov 2021, Online, Japan
Communication dans un congrès hal-03539418 v1

Atomic layer etching of Gallium nitride (GaN) using SF6/Ar plasmas

Lamiae Hamraoui , Gaëlle Antoun , Thomas Tillocher , Philippe Lefaucheux , Rémi Dussart et al.
ALD/ALE 2021, Jun 2021, Virtual meeting, United States
Communication dans un congrès hal-03280147 v1

Nanoscale cryogenic process for highly selective etch of Si3N4 over Si

Gaelle Antoun , Thomas Tillocher , Philippe Lefaucheux , Aurélie Girard , Christophe Cardinaud et al.
ALD/ALE 2021, Jun 2021, Virtual meeting, United States
Communication dans un congrès hal-03280162 v1

Plasma cryogenic etching : benefits of cooling the substrate at a low temperature in etching process technologies

Remi Dussart , Thomas Tillocher , Gaelle Antoun , Jack Nos , Philippe Lefaucheux et al.
42nd International Symposium on Dry Process, Nov 2021, Online, Japan
Communication dans un congrès hal-03539474 v1

SiOxFy layer deposition for cryogenic nanoscale etching

Gaelle Antoun , Thomas Tillocher , Philippe Lefaucheux , Jack Nos , Aurélie Girard et al.
PLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France
Communication dans un congrès hal-03539368 v1

Atomic layer etching of Gallium Nitride (GaN) using SF6 and Ar plasmas

Lamiae Hamraoui , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart , Mohamed Boufnichel
PLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France
Communication dans un congrès hal-03539383 v1

Atomic Layer Etching at cryogenic temperature

Gaëlle Antoun , Gaelle Antoun , Philippe Lefaucheux , Thomas Tillocher , Remi Dussart et al.
Plasma Thin Film International Union Meeting, Sep 2019, Antibes, France
Communication dans un congrès hal-02311323 v1

Cryogenic process for Atomic Layer Etching

Gaëlle Antoun , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart , Kumiko Yamazaki et al.
Plasma Etch and Strip in Microtechnology, May 2019, Grenoble, France
Communication dans un congrès hal-02311291 v1

Plasma processes applied to SiO2 cryo-atomic layer etching

Gaëlle Antoun , Remi Dussart , Philippe Lefaucheux , Thomas Tillocher , Tahara Shigeru et al.
XXXIV International Conference on Phenomena in Ionized Gases - 10th International Conference on Reactive Plasmas, Jul 2019, Sapporo, Japan
Communication dans un congrès hal-02311288 v1

Atomic Layer Etching at low substrate temperature

Gaëlle Antoun , Philippe Lefaucheux , Thomas Tillocher , Remi Dussart , Kumiko Yamazaki et al.
19th International Conference on Atomic Layer Deposition - 6th International Atomic Layer Etching Workshop, Jul 2019, Seattle, United States
Communication dans un congrès hal-02311308 v1

Bulk micromachined Titanium MEMS

Gwenaël Bécan , Baptiste Rousset , Samson Edmond , Nathalie Isac , Maïté Do Vale et al.
16th NAMIS Workshop (NAMIS 2018), Jun 2018, Oulu, Finland
Communication dans un congrès hal-02306373 v1

Low-k material cryoetch using high boiling point organic compounds to reduce plasma induced damage

Romain Chanson , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart , Liping Zhang et al.
40th International Symposium on Dry Process, Nov 2018, Nagoya, France
Communication dans un congrès hal-02311275 v1

The role of SiF4 physisorption in the cryogenic etching process of silicon

Gaëlle Antoun , Philippe Lefaucheux , Thomas Tillocher , Remi Dussart , Tahara Shigeru et al.
40th International Symposium on Dry Process, Nov 2018, Nagoya, Japan
Communication dans un congrès hal-02311267 v1

Cryogenic processes for silicon deep etching, low-K materials and atomic layer etching

Rémi Dussart , Thomas Tillocher , Philippe Lefaucheux , Koichi Yatsuda , Kaoru Maekawa
International Symposium on Advanced Plasma Science, Mar 2018, Nagoya, Japan
Communication dans un congrès hal-01735471 v1

Titanium-based MEMS: Application for a novel implantable feedthrough using TTV (Through Titanium Vias) technologies

Bertrand Boutaud , Edouard Laudrel , Marion Woytasik , Elie Lefeuvre , Thomas Tillocher et al.
6th Micro/Nano-Electronics Packaging and Assembly, Design and Manufacturing Forum (MiNaPAD 2018), May 2018, Grenoble, France
Communication dans un congrès hal-02306370 v1

Cryo-etching mechanism characterization by in-situ spectroscopic ellipsometry

Remi Dussart , Gaëlle Antoun , Thomas Tillocher , Philippe Lefaucheux
Surface Fest 2018, Jun 2018, Bordeaux, France
Communication dans un congrès hal-02311254 v1

Cryogenic etching applied to the realization of high density capacitor with a homopolymer mask

Mukesh Kulsreshath , Christophe Sinturel , Philippe Lefaucheux , Marylène Vayer , Thomas Tillocher et al.
21th International Colloquium on Plasma Processes, Jun 2017, Nice, France
Communication dans un congrès hal-01577611 v1

Microstructuration of titanium for implantable components

Edouard Laudrel , Thomas Tillocher , Philippe Lefaucheux , Marion Woytasik , Fabrice Michel et al.
Journées Nationales sur les Technologies Emergentes en micro-nanofabrication, Nov 2017, Orléans, France
Communication dans un congrès hal-02306063 v1

Cryoetching mechanisms and STiGer process evaluation

Rémi Dussart , Thomas Tillocher , Philippe Lefaucheux
38th dry process symposium, Nov 2016, Sapporo, Japan
Communication dans un congrès hal-01577607 v1

Low-Damage etching of highly porous OSG low-k dielectrics

Jean-Francois de Marneffe , Liping Zhang , Mikhail Baklanov , Koichi Yatsuda , Kaoru Maekawa et al.
SPIE Advanced Lithography 2016, Feb 2016, San José, United States
Communication dans un congrès hal-01280267 v1

Cryogenic processes for advanced material plasma etching

Remi Dussart , Thomas Tillocher , Philippe Lefaucheux
Quo vadis : Complex plasmas - TR 24, Aug 2016, Hambourg, Germany
Communication dans un congrès hal-01374747 v1

Cryoetching mechanisms and STiGer process evaluation

Remi Dussart , Philippe Lefaucheux , Thomas Tillocher
International Symposium on Dry Process 2016 (DPS 2016), Nov 2016, Sapporo, Japan
Communication dans un congrès hal-01561210 v1

Effects of gas and surface temperatures during cryogenic etching of silicon with SF6/O2

Stefan Tinck , Erik Neyts , Thomas Tillocher , Remi Dussart , Annemie Bogaerts
69th Gaseous Electronic Conference, Oct 2016, Bochum, France
Communication dans un congrès hal-01379701 v1

Numerical and experimental investigation of cryogenic etching of silicon and porous low-dielectric

Stefan Tinck , Thomas Tillocher , Remi Dussart , Erik Neyts , Annemie Bogaerts
International Symposium on Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan
Communication dans un congrès hal-01561212 v1

Low damage cryoetching of low-K materials

Remi Dussart , Thomas Tillocher , Floriane Leroy , Philippe Lefaucheux , Koichi Yatsuda et al.
SPIE Advanced Lithography 2015, Feb 2015, San José, United States
Communication dans un congrès hal-01151543 v1

A novel low temperature etch approach to reduce ULK plasma damage

Liping Zhang , Jean-Francois de Marneffe , Floriane Leroy , Rami Ljazouli , Philippe Lefaucheux et al.
Plasma Etch and Strip in Microtecnology, Apr 2015, Leuven, Belgium
Communication dans un congrès hal-01151524 v1

Reduction of plasma induced damage in cryogenic etching of low-k materials

Thomas Tillocher , Floriane Leroy , Liping Zhang , Philippe Lefaucheux , Christian Dussarat et al.
4th French Symposium on Emerging Technologies for micro-nanofabrication, Nov 2015, Ecully, France
Communication dans un congrès hal-01277115 v1

Limitation of surface defects in deep GaN etching

Nicolas Gosset , Thomas Tillocher , Floriane Leroy , Julien Ladroue , Philippe Lefaucheux et al.
AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States
Communication dans un congrès hal-01228462 v1

Cryogenic Etching of Silicon with SF6/O2/SiF4 plasmas: a modeling and experimental study

Stefan Tinck , Erik Neyts , Thomas Tillocher , Remi Dussart , Annemie Bogaerts
Plasma Etch and Strip in Microtechnology, Apr 2015, Leuven, Belgium
Communication dans un congrès hal-01151530 v1

Bulk titanium deep etching by plasma processes

Edouard Laudrel , Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Remi Dussart
, 20th International Colloquium on Plasma Processes (CIP), Jun 2015, Saint-Etienne, France
Communication dans un congrès hal-01166023 v1
Image document

Cryoetching processes applied to ULK material

Floriane Leroy , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart , Christian Dussarat et al.
37th International Symposium on Dry process , Nov 2015, Awaji, Japan
Communication dans un congrès hal-01287233 v1

Cryoetching processes applied to ULK material

Floriane Leroy , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart , Koichi Yatsuda et al.
37th International Symposium on Dry Process (DPS 2015), Nov 2015, Awaji Island, Japan
Communication dans un congrès hal-01228477 v1

Reduction of plasma induced damage of porous low-k materials using a cryogenic etching process

Thomas Tillocher , Floriane Leroy , Liping Zhang , Philippe Lefaucheux , Koichi Yatsuda et al.
22nd International Symposium on Plasma Chemistry (ISPC 2015), Jul 2015, Antwerp, Belgium
Communication dans un congrès hal-01228448 v1

Cryogenic etching of silicon with SF6/O2/SiF4 plasmas: a modelling and experimental study

Stefan Tinck , E.C. Neyts , Thomas Tillocher , Remi Dussart , Annemie Bogaerts
22nd International Symposium on Plasma Chemistry (ISPC 2015), Jul 2015, Antwerp, Belgium
Communication dans un congrès hal-01228451 v1

Surface state improvement in GaN deep etching for power electronics applications

Nicolas Gosset , Floriane Leroy , Thomas Tillocher , Julien Ladroue , Philippe Lefaucheux et al.
37th International Symposium on Dry Process (DPS 2015), Nov 2015, Awaji Island, Japan
Communication dans un congrès hal-01228470 v1

Plasma Cryogenic Etching: from 3D Integration to Low-k Materials

Thomas Tillocher , Remi Dussart , Floriane Leroy , Philippe Lefaucheux , Mohamed Boufnichel et al.
China Semiconductor Technology International Conference, Mar 2015, Shanghai, China
Communication dans un congrès hal-01151533 v1

Cryogenic Etching of Porous Organosilicate Low-k Materials: Fluorine based plasma analysis

Floriane Leroy , Thomas Tillocher , Liping Zhang , A. Girard , Christophe Cardinaud et al.
Plasma Etch and Strip in Microtechnology, Apr 2015, Leuven, Belgium
Communication dans un congrès hal-01151528 v1

Cryogenic etching of porous organosilicate low-k materials: Reduction of plasma induced damage

Floriane Leroy , Thomas Tillocher , Liping Zhang , Philippe Lefaucheux , Koichi Yatsuda et al.
AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States
Communication dans un congrès hal-01228458 v1

DRY DEEP ETCHING OF BULK TITANIUM BY PLASMA PROCESSES

Edouard Laudrel , Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Remi Dussart
AVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States
Communication dans un congrès hal-01228465 v1

Submicronic etched features of silicon with high aspect ratio obtained by cryogenic plasma deep-etching through perforated polymer thin films

Alexane Vital , Mohamed Boufnichel , Remi Dussart , Nicolas Gosset , Philippe Lefaucheux et al.
2015 MRS Spring Meeting & Exhibit, Apr 2015, San francisco, United States
Communication dans un congrès hal-01151542 v1

Cryoetching of Silicon and Advanced Materials for 3D Interconnects

Remi Dussart , Thomas Tillocher , Nicolas Gosset , Philippe Lefaucheux , Mohamed Boufnichel et al.
226th meeting of the Electroschemical Society, Oct 2014, Cancun, Mexico
Communication dans un congrès hal-01151844 v1

Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices

Nicolas Gosset , Julien Ladroue , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel et al.
226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico
Communication dans un congrès hal-01151851 v1

Cryogenic etching of submicronic features in silicon using masks based on porous polymer films

Thomas Tillocher , Alexane Vital , Marylène Vayer , Nicolas Gosset , Philippe Lefaucheux et al.
226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico
Communication dans un congrès hal-01151839 v1

Multiscale etching of holes by cryogenic silicon etching

Thomas Tillocher , Xiao Liu , Alexane Vital , Nicolas Gosset , Philippe Lefaucheux et al.
Plasma Etch and Strip in Microtechnology, May 2014, Gernoble, France
Communication dans un congrès hal-01057242 v1

Submicrometric structured silicon surfaces obtained from polymer blend film by silica replication and cryogenic plasma etching

Alexane Vital , Thomas Tillocher , Remi Dussart , Marylène Vayer , Christophe Sinturel
Plasma Etch and Strip in Microtechnology, May 2014, Grenoble, France
Communication dans un congrès hal-01057586 v1

Effect of surface fluorination on GaN deep dry etching defects

Nicolas Gosset , Julien Ladroue , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel et al.
Plasma Etch and Strip in Microtechnology, May 2014, Grenoble, France
Communication dans un congrès hal-01057239 v1

Plasma cryoetching processes for silicon and advanced materials

Remi Dussart , Thomas Tillocher , Nicolas Gosset , Alexane Vital , Philippe Lefaucheux et al.
International Conference on Microelectronics and Plasma Technology, Jul 2014, Gunsan, South Korea
Communication dans un congrès hal-01057585 v1

Reproducible process for titanium deep etching

Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Remi Dussart
19th International Vacuum Conference, Sep 2013, Paris, France
Communication dans un congrès hal-01057233 v1

Reproducible process for Titanium deep etching

Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Remi Dussart
Plasma Etch and Strip in Microtechnology, Mar 2013, Louvain, Belgium
Communication dans un congrès hal-00831358 v1

Deep etching processes for silicon micro- and nano-machining

Thomas Tillocher , Philippe Lefaucheux , Remi Dussart
Le Studium workshop : Bottom-up approaches to nanotechnology, May 2013, Orléans, France
Communication dans un congrès hal-00831360 v1

Integrated microplasmas on silicon: performances and limitations

Remi Dussart , Mukesh Kulsreshath , Valentin Félix , Lawrence J. Overzet , Judith Golda et al.
19th International Vacuum Conference, Sep 2013, Paris, France
Communication dans un congrès hal-01056618 v1

Titanium deep etching for medical applications

Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Remi Dussart
AVS 60th International Symposium & Exhibition, Oct 2013, Long Beach, United States
Communication dans un congrès hal-01057236 v1

Plasma deep etching of silicon, titanium and gallium nitride for microtechnology

Remi Dussart , Philippe Lefaucheux , Thomas Tillocher , Nicolas Gosset , Julien Ladroue et al.
AVS 60th International Symposium & Exhibition, Oct 2013, United States
Communication dans un congrès hal-01006364 v1

Applications of cryogenic plasma etching for microtechnology and advanced CMOS manufacturing

Remi Dussart , Philippe Lefaucheux , Thomas Tillocher , Pierre Ranson , Mohamed Boufnichel et al.
Plasma Etch and Strip in Microtechnology, Mar 2013, Louvain, Belgium
Communication dans un congrès hal-00831344 v1

Plasma surface interactions in deep dry etching

Thomas Tillocher , Julien Ladroue , Philippe Lefaucheux , Mohamed Boufnichel , Remi Dussart
Workshop on particle - surface interactions : from surface analysis to materials processing, Jun 2013, Luxembourg, Luxembourg
Communication dans un congrès hal-00831337 v1

Dry deep etching of GaN wide band-gap Semiconductor

Nicolas Gosset , Julien Ladroue , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel et al.
AVS 60th International Symposium & Exhibition, Oct 2013, Long Beach, United States
Communication dans un congrès hal-01057235 v1

Dry deep etching of GaN wide-bandgap semiconductor

Nicolas Gosset , Julien Ladroue , Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel et al.
19th International Vacuum Conference, Sep 2013, Paris, France
Communication dans un congrès hal-01056606 v1

Deep etching of gallium nitride by chlorine based plasma

Remi Dussart , Julien Ladroue , Thomas Tillocher , Mohamed Boufnichel , Nicolas Gosset et al.
Journées Nationales des Technologies Emergentes, May 2013, Evian, France
Communication dans un congrès hal-00831346 v1

Optimization of STiGer process used to etch high aspect ratio silicon microstructures

Thomas Tillocher , Philippe Lefaucheux , Julien Ladroue , Mohamed Boufnichel , Pierre Ranson et al.
AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States
Communication dans un congrès hal-00747743 v1

Investigations in SF6 and Cl2/Ar plasmas used for titanium deep etching by means of mass spectrometry

Thomas Tillocher , Judith Golda , Philippe Lefaucheux , Bertrand Boutaud , Pierre Ranson et al.
ESCAMPIG 2012, Jul 2012, Viana do Castelo, Portugal
Communication dans un congrès hal-00831352 v1

Deep GaN Etching : Role of SiCl4 in Plasma Chemistry

Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson et al.
AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States
Communication dans un congrès hal-00747746 v1

Development and limitations of microplasma arrays on silicon operating in DC

Remi Dussart , Mukesh Kulsreshath , Laurent Schwaederlé , Valentin Felix , Philippe Lefaucheux et al.
AVS 59th International Symposium and Exhibition, Oct 2012, United States
Communication dans un congrès hal-00747741 v1

Damage free cryogenic etching of porous organosilicate low-k films for advanced interconnect application

Liping Zhang , Rami Ljazouli , Philippe Lefaucheux , Thomas Tillocher , Remi Dussart et al.
AVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States
Communication dans un congrès hal-00747749 v1

Development of microdicharges in silicon operating in DC for medical applications

Mukesh Kulsreshath , Laurent Schwaederlé , Lawrence J. Overzet , Thomas Tillocher , Sébastien Dozias et al.
4th International Conference on Plasma Medecine, Jun 2012, Orléans, France
Communication dans un congrès hal-00831349 v1

Development and characterization of microplasma arrays on Silicon

Remi Dussart , Thierry Dufour , Mukesh Kulsreshath , Valentin Felix , Laurent Schwaederlé et al.
International Workshop on Physics of Microplasmas, May 2012, Bochum, Germany
Communication dans un congrès hal-00707932 v1

Integrated microplasmas on silicon: a new tool for lab-on-a-chip applications

Remi Dussart , Mukesh Kulsreshath , Valentin Felix , Lawrence J. Overzet , Thomas Tillocher et al.
Cancer Cells On Chip, Jun 2012, Lyon, France
Communication dans un congrès hal-00707933 v1

Formation of black silicon by cryogenic plasma etching processes

Thomas Tillocher , Jérémy Pereira , Nasreddine Mekkakia Maaza , Philippe Lefaucheux , Pierre Ranson et al.
Micro- and Nano-Engineering (MNE), Sep 2012, Toulouse, France
Communication dans un congrès hal-00831357 v1

Development of microdicharge arrays in silicon operating in DC and AC

Mukesh Kulsreshath , Laurent Schwaederlé , Lawrence J. Overzet , Thomas Tillocher , Sébastien Dozias et al.
European Physical Society/International Conference on Plasma Physics, Jul 2012, Stockholm, Sweden
Communication dans un congrès hal-00831351 v1

Caractérisation de matrices de micro plasmas sur silicium

Mukesh Kulsreshath , Laurent Schwaederlé , Valentin Felix , Philippe Lefaucheux , Thomas Tillocher et al.
XIIeme congrès de la division Plasmas de la Société Française de Physique, May 2012, Orléans, France
Communication dans un congrès hal-00707935 v1

Characterisation of Silicon based micro discharge plasma arrays in Direct Current (DC) at atmospheric pressure

Mukesh Kulsreshath , Laurent Schwaederlé , Philippe Lefaucheux , Thomas Tillocher , Julien Ladroue et al.
6th International Workshop on Microplasmas, Apr 2011, Paris, France
Communication dans un congrès hal-00707925 v1

Deep GaN Etching by Inductively Coupled Plasma

Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson et al.
HeteroSiC-WASMPE 2011, Jun 2011, Tours, France
Communication dans un congrès hal-00696418 v1

Obtaining a smooth surface after deep GaN etching

Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson et al.
18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France
Communication dans un congrès hal-00696419 v1

Deep Gallium Nitride Etching: ways to avoid etching defects

Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson et al.
3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Mar 2011, Nagoya, Japan
Communication dans un congrès hal-00696396 v1

STiGer process for silicon deep etching: extended scalloping reduction on submicron trenches

Wassim Kafrouni , Thomas Tillocher , Julien Ladroue , Philippe Lefaucheux , Mohamed Boufnichel et al.
18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France
Communication dans un congrès hal-00696422 v1

Deep etching of bulk titanium by plasma

Thomas Tillocher , Julien Ladroue , Wassim Kafrouni , Mukesh Kulsreshath , Philippe Lefaucheux et al.
18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France
Communication dans un congrès hal-00696425 v1

Deep silicon etching of 0.8 µm to hundreds of microns wide trenches with the STiGer process

Thomas Tillocher , Wassim Kafrouni , Julien Ladroue , Philippe Lefaucheux , Pierre Ranson et al.
AVS 58th International Symposium & Exhibition, Oct 2011, Nashville, United States
Communication dans un congrès hal-00696428 v1

Study of an MHCD operating in He using optical and electrical diagnostics

Remi Dussart , Thierry Dufour , Thomas Tillocher , Mukesh Kulsreshath , Olivier Aubry et al.
Diagnostics Microplasmas, Mar 2010, Germany
Communication dans un congrès hal-00487365 v1

Deep GaN Etching by Inductively Coupled Plasma

Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson et al.
3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France
Communication dans un congrès hal-00487363 v1

Micro Hollow Cathode Discharge Arrays in silicon devices

Remi Dussart , Mukesh Kulsreshath , Lawrence J. Overzet , Laurent Schwaederlé , Thomas Tillocher et al.
63rd Gaseous Electronics Conference, Oct 2010, Paris, France
Communication dans un congrès hal-00681902 v1

Gravure du GaN pour la prochaine génération de diodes Schottky

Julien Ladroue , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson
Workshop MNTS 12-20, Minatec, Mar 2010, Grenoble, France
Communication dans un congrès hal-00487358 v1

Ignition and extinction of a Micro Hollow Cathode Discharge operating in DC regime

Remi Dussart , Mukesh Kulsreshath , Thierry Dufour , Lawrence J. Overzet , Philippe Lefaucheux et al.
AVS 57th International Symposium & Exhibition, Nov 2010, Albuquerque, United States
Communication dans un congrès hal-00696390 v1

Deep Gallium Nitride Etching

Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson et al.
63rd Gaseous Electronics Conference, Oct 2010, Paris, France
Communication dans un congrès hal-00696376 v1

Silicon deep cryoetching with the STiGer process

Thomas Tillocher , Vincent L. Girault , Guillaume Gomme , Franck Moro , Laurianne E. Pichon et al.
3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France
Communication dans un congrès hal-00487360 v1

Optimization of STiGer process for silicon deep etching

Thomas Tillocher , Wassim Kafrouni , Vincent Girault , Julien Ladroue , Philippe Lefaucheux et al.
63rd Gaseous Electronics Conference, Oct 2010, Paris, France
Communication dans un congrès hal-00696366 v1

Deep Inductively Coupled Plasma Etching of GaN

Julien Ladroue , Mohamed Boufnichel , Thomas Tillocher , Philippe Lefaucheux , Pierre Ranson et al.
AVS 57th International Symposium & Exhibition, Nov 2010, Albuquerque, United States
Communication dans un congrès hal-00696393 v1

A comparative study on O2 and SO2 passivating chemistry for silicon deep cryogenic etching

Corinne Y. Duluard , Thomas Tillocher , Laurianne E. Pichon , Remi Dussart , Philippe Lefaucheux et al.
AVS 53rd International Symposium & Exhibition, Nov 2009, San Francisco, United States
Communication dans un congrès hal-00442683 v1

Cryoetching of silicon for MEMS and microelectronic components

Remi Dussart , Philippe Lefaucheux , Pierre Ranson , Laurianne E. Pichon , Corinne Y. Duluard et al.
16th International Colloquium on Plasma Processes, Jun 2007, France
Communication dans un congrès hal-00442662 v1

Enhanced robustness of the cryogenic process for silicon deep etching

Remi Dussart , Thomas Tillocher , El-Houcine Oubensaid , Philippe Lefaucheux , Pierre Ranson et al.
Micro- and Nano-Engineering, Sep 2007, Copenhague, Denmark
Communication dans un congrès hal-00444248 v1

SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature

Laurianne E. Pichon , Corinne Y. Duluard , Thomas Tillocher , Remi Dussart , Philippe Lefaucheux et al.
18th International Symposium on Plasma Chemistry, Aug 2007, Kyoto, Japan. pp.30P-105
Communication dans un congrès hal-00444241 v1

A new generation of cryogenic processes for silicon deep etching

Remi Dussart , Philippe Lefaucheux , Pierre Ranson , Laurianne E. Pichon , Corinne Y. Duluard et al.
60th Gaseous Electronics Conference, Oct 2007, Arlington, United States
Communication dans un congrès hal-00442668 v1

SiOxFy passivation layer characterization in the silicon cryoetching

Xavier Mellhaoui , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Lawrence J. Overzet et al.
Eighth International Conference on Advanced Surface Engineering (8th ICASE), Apr 2006, Japan
Communication dans un congrès hal-00442663 v1

Mechanisms and optimization in the cryogenic etching plasma process

Thomas Tillocher , Remi Dussart
Workshop on Silicon dry processing, Sep 2006, Aix-La-Chapelle, Germany
Communication dans un congrès hal-00442676 v1

Cryo-ALE of Si based on SF6 physisorption

Jack Nos , Thomas Tillocher , Philippe Lefaucheux , Jacques Faguet , Kaoru Maekawa et al.
PLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France
Poster de conférence hal-03539330 v1
Image document

Cryo-ALE of Silicon based on SF6 physisorption

Jack Nos , Gaelle Antoun , Thomas Tillocher , Philippe Lefaucheux , Jacques Faguet et al.
PLATHINIUM 2021, Sep 2021, Visioconférence, France
Poster de conférence hal-04138918 v1

Cryo-ALE of Si based on SF6 Physisorption

Jack Nos , Gaelle Antoun , Thomas Tillocher , Philippe Lefaucheux , Rémi Dussart
Journées Jeunes Chercheurs, Mar 2021, Orleans, France, France
Poster de conférence hal-04138885 v1

Bulk Titanium Micromachining using Deep Reactive Ion Etching

Rim Ettouri , Thomas Tillocher , Philippe Lefaucheux , Bertrand Boutaud , Rémi Dussart
15e Journées du Réseau des Plasmas Froids, Sep 2020, Saint-Dié-des-Vosges, France
Poster de conférence hal-03388672 v1

The role of SiF4 physisorption in silicon cryoetching

Gaëlle Antoun , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart , Christophe Cardinaud et al.
Plasma Thin Film International Union Meeting, Sep 2019, Antibes, France
Poster de conférence hal-02311339 v1

Analysis of mechanisms involved in cryogenic ALE

Gaëlle Antoun , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart , Kumiko Yamazaki et al.
19th International Conference on Atomic Layer Deposition - 6th International Atomic Layer Etching Workshop, Jul 2019, Seattle, France
Poster de conférence hal-02311314 v1

INTRODUCTION AU PROCÉDÉ DE GRAVURE CRYOGÉNIQUE DU SILICIUM

Gaëlle Antoun , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart
15e Congrès de la Société Française de Physique Division Plasmas, Jun 2018, Bordeaux, France
Poster de conférence hal-02311219 v1

Cryogenic ALE of silicon oxide

Nicolas Holtzer , Thomas Tillocher , Philippe Lefaucheux , Remi Dussart
Plasma Etch and Strip in Microtechnology, Oct 2017, Leuven, Belgium
Poster de conférence hal-02306057 v1

Cryogenic Atomic Layer Etching of SiO2

Nicolas Holtzer , Thomas Tillocher , Philippe Lefaucheux , Rémi Dussart
17th International Conference on Atomic Layer Deposition, Jul 2017, Denver, United States
Poster de conférence hal-01577612 v1

Silicon micromachining at cryogenic temperature

Thomas Tillocher , Philippe Lefaucheux , Mohamed Boufnichel , Remi Dussart
Design, Test, Integration and Packaging of MEMS/MOEMS 2017 (DTIP17), May 2017, Bordeaux, France
Poster de conférence hal-01561233 v1

Titanium microstructuring for implantable components

Edouard Laudrel , Thomas Tillocher , Yannick Méric , Philippe Lefaucheux , Marion Woytasik et al.
Design, Test, Integration and Packaging of MEMS/MOEMS, May 2017, Bordeaux, France
Poster de conférence hal-01561245 v1

Chlorine-based plasma deep etching of bulk titanium

Edouard Laudrel , Thomas Tillocher , Yannick Méric , Philippe Lefaucheux , Bertrand Boutaud et al.
International Symposium on Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan
Poster de conférence hal-01561222 v1

Cryogenic etching of silicon with SF6/O2: a computational and experimental study

Stefan Tinck , Erik Neyts , Thomas Tillocher , Remi Dussart , Annemie Bogaerts
Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France
Poster de conférence hal-01344725 v1

Advance in low-k cryogenic etching of porous organoscilicate : Investigation of a new gas with higher boiling point Organic (HBPO) and comparison with C4F8

Floriane Leroy , Nataniel Brochu , Romain Chanson , Remi Dussart , Thomas Tillocher et al.
Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France
Poster de conférence hal-01344722 v1

Deep silicon etching: STiGer vs. BOSCH

Chengkun Tu , Ying Cui , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux
Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France
Poster de conférence hal-01344704 v1

Enhanced reproducibility of SiO2 atomic layer etching by addition of O2 steps

Thomas Tillocher , Remi Dussart , Nicolas Holtzer , Philippe Lefaucheux
International Symposium of Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan
Poster de conférence hal-01561230 v1

Near Atmospheric Pressure Etching of Silicon by Microplasma

Valentin Felix , Vincent Ah-Leung , Judith Golda , Philippe Lefaucheux , Olivier Aubry et al.
International workshop on microplasmas, May 2015, Newark, France
Poster de conférence hal-01166020 v1