Thomas Tillocher
178
Documents
Publications
Publications
Atomic Layer Etching of SiO<sub>2</sub> using CF<sub>4</sub> plasma in deposition mode at cryogenic temperaturePLAsma THIN film International Union Meeting 2025 (PLATHINIUM 2025), Sep 2025, Antibes (France), France
Communication dans un congrès
hal-05325597
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UV absorption spectroscopy to study the role of CF radicals during cryogenic etching of Si in CF<sub>4</sub> plasmasJournées 2025 Groupement de Recherche (GdR) étude des milieux ionisés Plasmas froids créés par décharge et laser (EMILI), Oct 2025, Saint-etienne, France
Communication dans un congrès
hal-05325839
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Cryo- Atomic Layer Etching of Si, SiO2 and Si3N4ALD for Industry, Europäische Forschungsgesellschaft Dünne Schichten (EFDS), Mar 2025, Dresden (GERMANY), Germany
Communication dans un congrès
hal-05142003
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Tutorial lecture : The chemistry of cryogenic etchingInternational Symposium on Plasma Chemistry, Université du Minnesota, Jun 2025, Minneapolis, United States
Communication dans un congrès
hal-05142034
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Cryogenic ALE of SiO<sub>2</sub> using CF<sub>4</sub> plasmaAVS 25th International Conference on Atomic Layer Deposition (ALD 2025) featuring the 12th International Atomic Layer Etching Workshop (ALE 2025), Jun 2025, Jeju Island (South Korea), South Korea
Communication dans un congrès
hal-05325605
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Cryogenic bosch process using CF<sub>4</sub> plasma in deposition regimeThe International Plasma Technology Joint Conference 2025 (IPTJC2025), Jun 2025, New Taipei City - Taiwan, Taiwan
Communication dans un congrès
hal-05325733
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SiC plasma etching technology processes for power and optoelectronic devicesPESM 2024, IMEC Belgium, Jun 2024, Leuven (BE), Belgium
Communication dans un congrès
hal-04797018
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Enhanced physisorption of CF radicals on Si surfaces cooled at cryogenic temperature and application to deep etching45th International Symposium on Dry Process (DPS2024), Nov 2024, Hokkaïdo, Japan
Communication dans un congrès
hal-04805187
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Cryogenic etching of SiOxFy and SiO2 in SF6/H2 plasmaDry Process Symposium, Nov 2024, New Chitose, Japan
Communication dans un congrès
hal-04824284
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Physico-chemical mechanisms involved in SiF4/O2 plasma cryogenic deposition and etchingPESM & PlaCEP, Jun 2024, Leuven, Belgium
Communication dans un congrès
hal-04824287
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La gravure plasma, une étape critique dans la technologie SiC. Mécanismes physico-chimiques et applicationsJournées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France
Communication dans un congrès
hal-04799422
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Plasma cryogenic etching processes: what are the mechanisms involved at very low temperature ?14th EU-Japan Joint Symposium on Plasma Processing (JSPP) 2023, Satoshi Hamaguchi, Apr 2023, Okinawa, Japan, Japan
Communication dans un congrès
hal-04072312
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Evaluation of Bosch processing at cryogenic temperaturesPlasma Etch and Strip in Microelectronics, Jun 2023, Grenoble, France
Communication dans un congrès
hal-04138955
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Passivation mechanisms involved in cryo-etching processesISPLASMA 2023 / ICPLANTS 2023, Mar 2023, Gifu, Japan
Communication dans un congrès
hal-04038995
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SF6 and Ar plasma based atomic layer etching of Gallium Nitride (GaN)ALD/ALE 2022, Jun 2022, Ghent, Belgium
Communication dans un congrès
hal-04511533
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Cryo-ALE of Si and SiO2 using SF6 PhysisorptionPlasma Cryogenic Etching Processing (PlaCEP), May 2022, Orleans, France
Communication dans un congrès
hal-04138936
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SF6 Physisorption based cryo-ALE of siliconALD-ALE, Jun 2022, Ghent, Belgium
Communication dans un congrès
hal-04138943
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Titanium isotropic and anisotropic etching for MEMS applicationsDesign, Test, Integration & Packaging of MEMS/MOEMS (DTIP 2021), Aug 2021, Paris, France
Communication dans un congrès
hal-03388707
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Cryogenic etching applied to next generation interconnects2021 Virtual MRS spring meeting, MRS, Apr 2021, Seattle (Virtual meeting), United States
Communication dans un congrès
hal-03280129
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Aspect-Ratio-Dependent Etch effects in Titanium Deep Reactive Ion EtchingPLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France
Communication dans un congrès
hal-03389062
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Anisotropic Reactive Ion Etching of Titanium Using SF6/O2/Ar plasma47th International Conference on Micro and Nano Engineering (MNE), Sep 2021, Turin, Italy
Communication dans un congrès
hal-03389072
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Atomic Layer Etching of Gallium Nitride (GaN) using fluorinated chemistry42nd International Symposium on Dry Process, Nov 2021, Online, Japan
Communication dans un congrès
hal-03539418
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Atomic layer etching of Gallium nitride (GaN) using SF6/Ar plasmasALD/ALE 2021, Jun 2021, Virtual meeting, United States
Communication dans un congrès
hal-03280147
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Nanoscale cryogenic process for highly selective etch of Si3N4 over SiALD/ALE 2021, Jun 2021, Virtual meeting, United States
Communication dans un congrès
hal-03280162
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Plasma cryogenic etching : benefits of cooling the substrate at a low temperature in etching process technologies42nd International Symposium on Dry Process, Nov 2021, Online, Japan
Communication dans un congrès
hal-03539474
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SiOxFy layer deposition for cryogenic nanoscale etchingPLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France
Communication dans un congrès
hal-03539368
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Atomic layer etching of Gallium Nitride (GaN) using SF6 and Ar plasmasPLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France
Communication dans un congrès
hal-03539383
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Atomic Layer Etching at cryogenic temperaturePlasma Thin Film International Union Meeting, Sep 2019, Antibes, France
Communication dans un congrès
hal-02311323
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Cryogenic process for Atomic Layer EtchingPlasma Etch and Strip in Microtechnology, May 2019, Grenoble, France
Communication dans un congrès
hal-02311291
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Plasma processes applied to SiO2 cryo-atomic layer etchingXXXIV International Conference on Phenomena in Ionized Gases - 10th International Conference on Reactive Plasmas, Jul 2019, Sapporo, Japan
Communication dans un congrès
hal-02311288
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Atomic Layer Etching at low substrate temperature19th International Conference on Atomic Layer Deposition - 6th International Atomic Layer Etching Workshop, Jul 2019, Seattle, United States
Communication dans un congrès
hal-02311308
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Bulk micromachined Titanium MEMS16th NAMIS Workshop (NAMIS 2018), Jun 2018, Oulu, Finland
Communication dans un congrès
hal-02306373
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Low-k material cryoetch using high boiling point organic compounds to reduce plasma induced damage40th International Symposium on Dry Process, Nov 2018, Nagoya, France
Communication dans un congrès
hal-02311275
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The role of SiF4 physisorption in the cryogenic etching process of silicon40th International Symposium on Dry Process, Nov 2018, Nagoya, Japan
Communication dans un congrès
hal-02311267
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Cryogenic processes for silicon deep etching, low-K materials and atomic layer etchingInternational Symposium on Advanced Plasma Science, Mar 2018, Nagoya, Japan
Communication dans un congrès
hal-01735471
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Titanium-based MEMS: Application for a novel implantable feedthrough using TTV (Through Titanium Vias) technologies6th Micro/Nano-Electronics Packaging and Assembly, Design and Manufacturing Forum (MiNaPAD 2018), May 2018, Grenoble, France
Communication dans un congrès
hal-02306370
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Cryo-etching mechanism characterization by in-situ spectroscopic ellipsometrySurface Fest 2018, Jun 2018, Bordeaux, France
Communication dans un congrès
hal-02311254
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Cryogenic etching applied to the realization of high density capacitor with a homopolymer mask21th International Colloquium on Plasma Processes, Jun 2017, Nice, France
Communication dans un congrès
hal-01577611
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Microstructuration of titanium for implantable componentsJournées Nationales sur les Technologies Emergentes en micro-nanofabrication, Nov 2017, Orléans, France
Communication dans un congrès
hal-02306063
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Cryoetching mechanisms and STiGer process evaluation38th dry process symposium, Nov 2016, Sapporo, Japan
Communication dans un congrès
hal-01577607
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Low-Damage etching of highly porous OSG low-k dielectricsSPIE Advanced Lithography 2016, Feb 2016, San José, United States
Communication dans un congrès
hal-01280267
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Cryogenic processes for advanced material plasma etchingQuo vadis : Complex plasmas - TR 24, Aug 2016, Hambourg, Germany
Communication dans un congrès
hal-01374747
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Cryoetching mechanisms and STiGer process evaluationInternational Symposium on Dry Process 2016 (DPS 2016), Nov 2016, Sapporo, Japan
Communication dans un congrès
hal-01561210
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Effects of gas and surface temperatures during cryogenic etching of silicon with SF6/O269th Gaseous Electronic Conference, Oct 2016, Bochum, France
Communication dans un congrès
hal-01379701
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Numerical and experimental investigation of cryogenic etching of silicon and porous low-dielectricInternational Symposium on Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan
Communication dans un congrès
hal-01561212
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Low damage cryoetching of low-K materialsSPIE Advanced Lithography 2015, Feb 2015, San José, United States
Communication dans un congrès
hal-01151543
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A novel low temperature etch approach to reduce ULK plasma damagePlasma Etch and Strip in Microtecnology, Apr 2015, Leuven, Belgium
Communication dans un congrès
hal-01151524
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Reduction of plasma induced damage in cryogenic etching of low-k materials4th French Symposium on Emerging Technologies for micro-nanofabrication, Nov 2015, Ecully, France
Communication dans un congrès
hal-01277115
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Limitation of surface defects in deep GaN etchingAVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States
Communication dans un congrès
hal-01228462
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Cryogenic Etching of Silicon with SF6/O2/SiF4 plasmas: a modeling and experimental studyPlasma Etch and Strip in Microtechnology, Apr 2015, Leuven, Belgium
Communication dans un congrès
hal-01151530
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Bulk titanium deep etching by plasma processes, 20th International Colloquium on Plasma Processes (CIP), Jun 2015, Saint-Etienne, France
Communication dans un congrès
hal-01166023
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Cryoetching processes applied to ULK material37th International Symposium on Dry process , Nov 2015, Awaji, Japan
Communication dans un congrès
hal-01287233
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Cryoetching processes applied to ULK material37th International Symposium on Dry Process (DPS 2015), Nov 2015, Awaji Island, Japan
Communication dans un congrès
hal-01228477
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Reduction of plasma induced damage of porous low-k materials using a cryogenic etching process22nd International Symposium on Plasma Chemistry (ISPC 2015), Jul 2015, Antwerp, Belgium
Communication dans un congrès
hal-01228448
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Cryogenic etching of silicon with SF6/O2/SiF4 plasmas: a modelling and experimental study22nd International Symposium on Plasma Chemistry (ISPC 2015), Jul 2015, Antwerp, Belgium
Communication dans un congrès
hal-01228451
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Surface state improvement in GaN deep etching for power electronics applications37th International Symposium on Dry Process (DPS 2015), Nov 2015, Awaji Island, Japan
Communication dans un congrès
hal-01228470
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Plasma Cryogenic Etching: from 3D Integration to Low-k MaterialsChina Semiconductor Technology International Conference, Mar 2015, Shanghai, China
Communication dans un congrès
hal-01151533
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Cryogenic Etching of Porous Organosilicate Low-k Materials: Fluorine based plasma analysisPlasma Etch and Strip in Microtechnology, Apr 2015, Leuven, Belgium
Communication dans un congrès
hal-01151528
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Cryogenic etching of porous organosilicate low-k materials: Reduction of plasma induced damageAVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States
Communication dans un congrès
hal-01228458
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DRY DEEP ETCHING OF BULK TITANIUM BY PLASMA PROCESSESAVS 62nd International Symposium & Exhibition, Oct 2015, San Jose, United States
Communication dans un congrès
hal-01228465
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Submicronic etched features of silicon with high aspect ratio obtained by cryogenic plasma deep-etching through perforated polymer thin films2015 MRS Spring Meeting & Exhibit, Apr 2015, San francisco, United States
Communication dans un congrès
hal-01151542
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Cryoetching of Silicon and Advanced Materials for 3D Interconnects226th meeting of the Electroschemical Society, Oct 2014, Cancun, Mexico
Communication dans un congrès
hal-01151844
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Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico
Communication dans un congrès
hal-01151851
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Cryogenic etching of submicronic features in silicon using masks based on porous polymer films226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico
Communication dans un congrès
hal-01151839
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Multiscale etching of holes by cryogenic silicon etchingPlasma Etch and Strip in Microtechnology, May 2014, Gernoble, France
Communication dans un congrès
hal-01057242
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Submicrometric structured silicon surfaces obtained from polymer blend film by silica replication and cryogenic plasma etchingPlasma Etch and Strip in Microtechnology, May 2014, Grenoble, France
Communication dans un congrès
hal-01057586
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Effect of surface fluorination on GaN deep dry etching defectsPlasma Etch and Strip in Microtechnology, May 2014, Grenoble, France
Communication dans un congrès
hal-01057239
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Plasma cryoetching processes for silicon and advanced materialsInternational Conference on Microelectronics and Plasma Technology, Jul 2014, Gunsan, South Korea
Communication dans un congrès
hal-01057585
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Reproducible process for titanium deep etching19th International Vacuum Conference, Sep 2013, Paris, France
Communication dans un congrès
hal-01057233
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Reproducible process for Titanium deep etchingPlasma Etch and Strip in Microtechnology, Mar 2013, Louvain, Belgium
Communication dans un congrès
hal-00831358
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Deep etching processes for silicon micro- and nano-machiningLe Studium workshop : Bottom-up approaches to nanotechnology, May 2013, Orléans, France
Communication dans un congrès
hal-00831360
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Integrated microplasmas on silicon: performances and limitations19th International Vacuum Conference, Sep 2013, Paris, France
Communication dans un congrès
hal-01056618
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Titanium deep etching for medical applicationsAVS 60th International Symposium & Exhibition, Oct 2013, Long Beach, United States
Communication dans un congrès
hal-01057236
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Plasma deep etching of silicon, titanium and gallium nitride for microtechnologyAVS 60th International Symposium & Exhibition, Oct 2013, United States
Communication dans un congrès
hal-01006364
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Applications of cryogenic plasma etching for microtechnology and advanced CMOS manufacturingPlasma Etch and Strip in Microtechnology, Mar 2013, Louvain, Belgium
Communication dans un congrès
hal-00831344
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Plasma surface interactions in deep dry etchingWorkshop on particle - surface interactions : from surface analysis to materials processing, Jun 2013, Luxembourg, Luxembourg
Communication dans un congrès
hal-00831337
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Dry deep etching of GaN wide band-gap SemiconductorAVS 60th International Symposium & Exhibition, Oct 2013, Long Beach, United States
Communication dans un congrès
hal-01057235
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Dry deep etching of GaN wide-bandgap semiconductor19th International Vacuum Conference, Sep 2013, Paris, France
Communication dans un congrès
hal-01056606
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Deep etching of gallium nitride by chlorine based plasmaJournées Nationales des Technologies Emergentes, May 2013, Evian, France
Communication dans un congrès
hal-00831346
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Optimization of STiGer process used to etch high aspect ratio silicon microstructuresAVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States
Communication dans un congrès
hal-00747743
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Investigations in SF6 and Cl2/Ar plasmas used for titanium deep etching by means of mass spectrometryESCAMPIG 2012, Jul 2012, Viana do Castelo, Portugal
Communication dans un congrès
hal-00831352
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Deep GaN Etching : Role of SiCl4 in Plasma ChemistryAVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States
Communication dans un congrès
hal-00747746
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Development and limitations of microplasma arrays on silicon operating in DCAVS 59th International Symposium and Exhibition, Oct 2012, United States
Communication dans un congrès
hal-00747741
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Damage free cryogenic etching of porous organosilicate low-k films for advanced interconnect applicationAVS 59th International Symposium and Exhibition, Oct 2012, Tampa, United States
Communication dans un congrès
hal-00747749
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Development of microdicharges in silicon operating in DC for medical applications4th International Conference on Plasma Medecine, Jun 2012, Orléans, France
Communication dans un congrès
hal-00831349
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Development and characterization of microplasma arrays on SiliconInternational Workshop on Physics of Microplasmas, May 2012, Bochum, Germany
Communication dans un congrès
hal-00707932
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Integrated microplasmas on silicon: a new tool for lab-on-a-chip applicationsCancer Cells On Chip, Jun 2012, Lyon, France
Communication dans un congrès
hal-00707933
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Formation of black silicon by cryogenic plasma etching processesMicro- and Nano-Engineering (MNE), Sep 2012, Toulouse, France
Communication dans un congrès
hal-00831357
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Development of microdicharge arrays in silicon operating in DC and ACEuropean Physical Society/International Conference on Plasma Physics, Jul 2012, Stockholm, Sweden
Communication dans un congrès
hal-00831351
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Caractérisation de matrices de micro plasmas sur siliciumXIIeme congrès de la division Plasmas de la Société Française de Physique, May 2012, Orléans, France
Communication dans un congrès
hal-00707935
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Characterisation of Silicon based micro discharge plasma arrays in Direct Current (DC) at atmospheric pressure6th International Workshop on Microplasmas, Apr 2011, Paris, France
Communication dans un congrès
hal-00707925
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Deep GaN Etching by Inductively Coupled PlasmaHeteroSiC-WASMPE 2011, Jun 2011, Tours, France
Communication dans un congrès
hal-00696418
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Obtaining a smooth surface after deep GaN etching18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France
Communication dans un congrès
hal-00696419
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Deep Gallium Nitride Etching: ways to avoid etching defects3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Mar 2011, Nagoya, Japan
Communication dans un congrès
hal-00696396
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STiGer process for silicon deep etching: extended scalloping reduction on submicron trenches18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France
Communication dans un congrès
hal-00696422
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Deep etching of bulk titanium by plasma18th International Colloquium on Plasma Processes (CIP), Jul 2011, Nantes, France
Communication dans un congrès
hal-00696425
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Deep silicon etching of 0.8 µm to hundreds of microns wide trenches with the STiGer processAVS 58th International Symposium & Exhibition, Oct 2011, Nashville, United States
Communication dans un congrès
hal-00696428
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Study of an MHCD operating in He using optical and electrical diagnosticsDiagnostics Microplasmas, Mar 2010, Germany
Communication dans un congrès
hal-00487365
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Deep GaN Etching by Inductively Coupled Plasma3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France
Communication dans un congrès
hal-00487363
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Micro Hollow Cathode Discharge Arrays in silicon devices63rd Gaseous Electronics Conference, Oct 2010, Paris, France
Communication dans un congrès
hal-00681902
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Gravure du GaN pour la prochaine génération de diodes SchottkyWorkshop MNTS 12-20, Minatec, Mar 2010, Grenoble, France
Communication dans un congrès
hal-00487358
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Ignition and extinction of a Micro Hollow Cathode Discharge operating in DC regimeAVS 57th International Symposium & Exhibition, Nov 2010, Albuquerque, United States
Communication dans un congrès
hal-00696390
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Deep Gallium Nitride Etching63rd Gaseous Electronics Conference, Oct 2010, Paris, France
Communication dans un congrès
hal-00696376
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Silicon deep cryoetching with the STiGer process3RD WORKSHOP ON PLASMA ETCH AND STRIP IN MICROELECTRONICS, Mar 2010, France
Communication dans un congrès
hal-00487360
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Optimization of STiGer process for silicon deep etching63rd Gaseous Electronics Conference, Oct 2010, Paris, France
Communication dans un congrès
hal-00696366
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Deep Inductively Coupled Plasma Etching of GaNAVS 57th International Symposium & Exhibition, Nov 2010, Albuquerque, United States
Communication dans un congrès
hal-00696393
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A comparative study on O2 and SO2 passivating chemistry for silicon deep cryogenic etchingAVS 53rd International Symposium & Exhibition, Nov 2009, San Francisco, United States
Communication dans un congrès
hal-00442683
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Cryoetching of silicon for MEMS and microelectronic components16th International Colloquium on Plasma Processes, Jun 2007, France
Communication dans un congrès
hal-00442662
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Enhanced robustness of the cryogenic process for silicon deep etchingMicro- and Nano-Engineering, Sep 2007, Copenhague, Denmark
Communication dans un congrès
hal-00444248
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SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature18th International Symposium on Plasma Chemistry, Aug 2007, Kyoto, Japan. pp.30P-105
Communication dans un congrès
hal-00444241
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A new generation of cryogenic processes for silicon deep etching60th Gaseous Electronics Conference, Oct 2007, Arlington, United States
Communication dans un congrès
hal-00442668
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SiOxFy passivation layer characterization in the silicon cryoetchingEighth International Conference on Advanced Surface Engineering (8th ICASE), Apr 2006, Japan
Communication dans un congrès
hal-00442663
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Mechanisms and optimization in the cryogenic etching plasma processWorkshop on Silicon dry processing, Sep 2006, Aix-La-Chapelle, Germany
Communication dans un congrès
hal-00442676
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Cryo-ALE of Si based on SF6 physisorptionPLATHINIUM (Plasma Thin film International Union Meeting) 2021, Sep 2021, Antibes, France
Poster de conférence
hal-03539330
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Cryo-ALE of Silicon based on SF6 physisorptionPLATHINIUM 2021, Sep 2021, Visioconférence, France
Poster de conférence
hal-04138918
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Cryo-ALE of Si based on SF6 PhysisorptionJournées Jeunes Chercheurs, Mar 2021, Orleans, France, France
Poster de conférence
hal-04138885
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Bulk Titanium Micromachining using Deep Reactive Ion Etching15e Journées du Réseau des Plasmas Froids, Sep 2020, Saint-Dié-des-Vosges, France
Poster de conférence
hal-03388672
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The role of SiF4 physisorption in silicon cryoetchingPlasma Thin Film International Union Meeting, Sep 2019, Antibes, France
Poster de conférence
hal-02311339
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Analysis of mechanisms involved in cryogenic ALE19th International Conference on Atomic Layer Deposition - 6th International Atomic Layer Etching Workshop, Jul 2019, Seattle, France
Poster de conférence
hal-02311314
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INTRODUCTION AU PROCÉDÉ DE GRAVURE CRYOGÉNIQUE DU SILICIUM15e Congrès de la Société Française de Physique Division Plasmas, Jun 2018, Bordeaux, France
Poster de conférence
hal-02311219
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Cryogenic ALE of silicon oxidePlasma Etch and Strip in Microtechnology, Oct 2017, Leuven, Belgium
Poster de conférence
hal-02306057
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Cryogenic Atomic Layer Etching of SiO217th International Conference on Atomic Layer Deposition, Jul 2017, Denver, United States
Poster de conférence
hal-01577612
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Silicon micromachining at cryogenic temperatureDesign, Test, Integration and Packaging of MEMS/MOEMS 2017 (DTIP17), May 2017, Bordeaux, France
Poster de conférence
hal-01561233
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Titanium microstructuring for implantable componentsDesign, Test, Integration and Packaging of MEMS/MOEMS, May 2017, Bordeaux, France
Poster de conférence
hal-01561245
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Chlorine-based plasma deep etching of bulk titaniumInternational Symposium on Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan
Poster de conférence
hal-01561222
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Cryogenic etching of silicon with SF6/O2: a computational and experimental studyPlasma Etch and Strip in Microtechnology, May 2016, Grenoble, France
Poster de conférence
hal-01344725
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Advance in low-k cryogenic etching of porous organoscilicate : Investigation of a new gas with higher boiling point Organic (HBPO) and comparison with C4F8Plasma Etch and Strip in Microtechnology, May 2016, Grenoble, France
Poster de conférence
hal-01344722
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Deep silicon etching: STiGer vs. BOSCHPlasma Etch and Strip in Microtechnology, May 2016, Grenoble, France
Poster de conférence
hal-01344704
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Enhanced reproducibility of SiO2 atomic layer etching by addition of O2 stepsInternational Symposium of Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan
Poster de conférence
hal-01561230
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Near Atmospheric Pressure Etching of Silicon by MicroplasmaInternational workshop on microplasmas, May 2015, Newark, France
Poster de conférence
hal-01166020
v1
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REALISATION DE BATTERIES 3D PAR VOIE LIQUIDEFrance, N° de brevet: FR3059158A1. 2018
Brevet
hal-05308117
v1
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