Yannick ROELENS

143
Documents

Publications

Publications

0.53 mΩ.cm 2 /592 V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination

Hugo Bouillaud , Beatriz Orfao , Etienne Okada , Yannick Roelens , Malek Zegaoui et al.
IEEE Electron Device Letters, 2026, pp.1-1. ⟨10.1109/LED.2026.3652934⟩
Article dans une revue hal-05484994 v1
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Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications

Beatriz Orfao , Amir Al Abdallah , Hugo Bouillaud , Guillaume Ducournau , Yannick Roelens et al.
Electronics Letters, 2025, 61 (1), pp.e70307. ⟨10.1049/ell2.70307⟩
Article dans une revue hal-05149241 v1

Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

R. Peña , B. Orfao , I. Íñiguez-De-La-Torre , G. Paz , Mahmoud Abou Daher et al.
IEEE Transactions on Electron Devices, 2024, 71 (8), pp.4524-4529. ⟨10.1109/TED.2024.3409202⟩
Article dans une revue hal-04665811 v1
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Reverse-Bias Current Hysteresis at Low Temperature in GaN Schottky Barrier Diodes

B. Orfao , Mahmoud Abou Daher , R. A. Peña , B. G. Vasallo , S. Pérez et al.
Journal of Applied Physics, 2024, 135 (1), pp.014501. ⟨10.1063/5.0177853⟩
Article dans une revue hal-04405976 v1
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High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

G. Di Gioia , E. Frayssinet , M. Samnouni , V. Chinni , P. Mondal et al.
Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩
Article dans une revue hal-04115301 v1

Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices

Thomas Bordignon , Blandine Duriez , Nicolas Guitard , Romain Duru , Clément Pribat et al.
Solid-State Electronics, 2023, 210, pp.108787. ⟨10.1016/j.sse.2023.108787⟩
Article dans une revue hal-04253696 v1
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GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

Giuseppe Di Gioia , Mohammed Samnouni , Vinay Kumar Chinni , Priyanka Mondal , Jeanne Treuttel et al.
Superlattices and Microstructures, 2022, 164, pp.107116. ⟨10.1016/j.spmi.2021.107116⟩
Article dans une revue hal-03542163 v1
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

B. Orfao , G. Di Gioia , B. Vasallo , S. Pérez , J. Mateos et al.
Journal of Applied Physics, 2022, 132 (4), pp.044502. ⟨10.1063/5.0100426⟩
Article dans une revue hal-03741441 v1
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100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications

Cyrille Gardès , Sonia Bagumako , L. Desplanque , Nicolas Wichmann , S. Bollaert et al.
SCIENTIFIC WORLD JOURNAL, 2014, 2014, 136340, 6 p. ⟨10.1155/2014/136340⟩
Article dans une revue hal-00969148 v1

0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

Mohammed Zaknoune , Etienne Okada , Estelle Mairiaux , Yannick Roelens , Damien Ducatteau et al.
IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩
Article dans une revue hal-00955679 v1

InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

Ndèye Arame Thiam , Yannick Roelens , Christophe Coinon , Vanessa Avramovic , Brice Grandchamp et al.
IEEE Electron Device Letters, 2014, 35 (10), pp.1010-1012. ⟨10.1109/LED.2014.2347256⟩
Article dans une revue hal-01090844 v1
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Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions

J. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
Applied Physics Letters, 2013, 102, pp.243503-1-4. ⟨10.1063/1.4811787⟩
Article dans une revue hal-00871898 v1
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Terahertz emission induced by optical beating in nanometer-length field-effect transistors

Philippe Nouvel , Jérémie Torres , Stéphane Blin , Hugues Marinchio , Christophe Palermo et al.
Journal of Applied Physics, 2012, 111, pp.103707. ⟨10.1063/1.4718445⟩
Article dans une revue hal-00699894 v1

480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design

M. Zaknoune , E. Mairiaux , Yannick Roelens , N. Waldhoff , U. Rouchy et al.
IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩
Article dans une revue hal-00786893 v1

Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

I. Iniguez-De-La-Torre , J. Mateos , Yannick Roelens , C. Gardes , S. Bollaert et al.
Nanotechnology, 2011, 22, pp.445203-1-5. ⟨10.1088/0957-4484/22/44/445203⟩
Article dans une revue istex hal-00639808 v1
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Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩
Article dans une revue hal-00783377 v1

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

G. Moschetti , N. Wadefalk , P.A. Nilsson , Yannick Roelens , A. Noudeviwa et al.
Solid-State Electronics, 2011, 64, pp.47-53. ⟨10.1016/j.sse.2011.06.048⟩
Article dans une revue istex hal-00639807 v1

Three-terminal junctions operating as mixers, frequency doublers and detectors : a broad-band frequency numerical and experimental study at room temperature

I. Iniguez-De-La-Torre , T. Gonzalez , D. Pardo , C. Gardes , Yannick Roelens et al.
Semiconductor Science and Technology, 2010, 25, pp.125013-1-14. ⟨10.1088/0268-1242/25/12/125013⟩
Article dans une revue istex hal-00548604 v1

Sb-HEMT : toward 100-mV cryogenics electronics

A. Noudewiva , Yannick Roelens , Francois Danneville , A. Olivier , Nicolas Wichmann et al.
IEEE Transactions on Electron Devices, 2010, 57, pp.1903-1909. ⟨10.1109/TED.2010.2050109⟩
Article dans une revue hal-00548570 v1

Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor

B.G. Vasallo , Nicolas Wichmann , S. Bollaert , Yannick Roelens , A. Cappy et al.
IEEE Transactions on Electron Devices, 2010, 57, pp.2572-2578. ⟨10.1109/TED.2010.2058633⟩
Article dans une revue hal-00567883 v1

RF doubling and rectification in three-terminal junctions : experimental characterization and Monte Carlo analysis

I. Iniguez-De-La-Torre , T. Gonzalez , D. Pardo , C. Gardes , Yannick Roelens et al.
Journal of Physics: Conference Series, 2009, 193, pp.012021-1-4. ⟨10.1088/1742-6596/193/1/012021⟩
Article dans une revue hal-00471812 v1

Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

Nicolas Wichmann , B.G. Vasallo , S. Bollaert , Yannick Roelens , X. Wallart et al.
Applied Physics Letters, 2009, 94, pp.103504-1-3. ⟨10.1063/1.3095482⟩
Article dans une revue hal-00469682 v1
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Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

I. Iniguez de La Torre , T. Gonzalez , D. Pardo , C. Gardes , Yannick Roelens et al.
Journal of Applied Physics, 2009, 105 (9), pp.094504. ⟨10.1063/1.3124363⟩
Article dans une revue hal-00471809 v1

Room-temperature terahertz spectroscopy of optically excited plasma waves in HEMTs

P. Nouvel , H. Marinchio , J. Torres , C. Palermo , D. Gasquet et al.
Journal of Physics: Conference Series, 2009, 193, pp.012075. ⟨10.1088/1742-6596/193/1/012075⟩
Article dans une revue hal-01904185 v1

Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors

H. Marinchio , J. Torres , G. Sabatini , P. Nouvel , C. Palermo et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (1), pp.257-260. ⟨10.1002/pssc.200776572⟩
Article dans une revue hal-00327410 v1

Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation

A. El Fatimy , R. Tauk , S. Boubanga , F. Teppe , N. Dyakonova et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5, pp.244-248. ⟨10.1002/pssc.200776585⟩
Article dans une revue istex hal-00360007 v1

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

M. Borg , E. Lefebvre , M. Malmkvist , L. Desplanque , X. Wallart et al.
Solid-State Electronics, 2008, 52, pp.775-781. ⟨10.1016/j.sse.2007.12.002⟩
Article dans une revue istex hal-00356942 v1

Ballistic nanodevices for high frequency applications

C. Gardes , Yannick Roelens , S. Bollaert , J.S. Galloo , X. Wallart et al.
International Journal of Nanotechnology, 2008, 5, 796-808, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018698⟩
Article dans une revue hal-00356665 v1

Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors

A. Shchepetov , C. Gardes , Yannick Roelens , A. Cappy , S. Bollaert et al.
Applied Physics Letters, 2008, 92, pp.242105-1-3. ⟨10.1063/1.2945286⟩
Article dans une revue hal-00356666 v1

Monte Carlo simulation of surface charge effects in T-branch nanojunctions

T. Gonzalez , I. Iniguez de La Torre , D. Pardo , J. Mateos , S. Bollaert et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5, pp.94-97. ⟨10.1002/pssc.200776512⟩
Article dans une revue istex hal-00356677 v1

Current driven resonant plasma wave detection of terahertz radiation : toward the Dyakonov-Shur instability

S. Boubanga-Tombet , F. Teppe , D. Coquillat , S. Nadar , N. Dyakonova et al.
Applied Physics Letters, 2008, 92, pp.212101-1-3. ⟨10.1063/1.2936077⟩
Article dans une revue hal-00356668 v1

Comparison between the noise performance of double- and single-gate InP-based HEMTs

B.G. Vasallo , Nicolas Wichmann , S. Bollaert , Yannick Roelens , A. Cappy et al.
IEEE Transactions on Electron Devices, 2008, 55, pp.1535-1540. ⟨10.1109/TED.2008.921982⟩
Article dans une revue hal-00356667 v1

Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

B.G. Vasallo , Nicolas Wichmann , S. Bollaert , Yannick Roelens , A. Cappy et al.
IEEE Transactions on Electron Devices, 2007, 54, pp.2815-2822. ⟨10.1109/TED.2007.907801⟩
Article dans une revue hal-00255757 v1
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Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

M.E. Levinshtein , S.L. Rumyantsev , R. Tauk , S. Boubanga , N. Dyakonova et al.
Journal of Applied Physics, 2007, 102 (6), pp.064506. ⟨10.1063/1.2781087⟩
Article dans une revue hal-00283040 v1

Influence of the surface charge on the operation of ballistic T-branch junctions : a self-consistent model for Monte Carlo simulations

I. Iniguez de La Torre , J. Mateos , T. Gonzalez , D. Pardo , J.S. Galloo et al.
Semiconductor Science and Technology, 2007, 22, pp.663-670. ⟨10.1088/0268-1242/22/6/014⟩
Article dans une revue istex hal-00283039 v1

Ballistic nano-devices for high frequency applications

S. Bollaert , A. Cappy , Yannick Roelens , J.S. Galloo , C. Gardes et al.
Thin Solid Films, 2007, 515, pp.4321-4326. ⟨10.1016/j.tsf.2006.07.178⟩
Article dans une revue istex hal-00285625 v1

Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer ingaas transistors

F. Teppe , M. Orlov , A.E. Fatimy , A. Tiberj , W. Knap et al.
Applied Physics Letters, 2006, 89 (22), pp.222109.1-222109.3. ⟨10.1063/1.2392999⟩
Article dans une revue hal-00329604 v1

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy , F. Teppe , N. Dyakonova , W. Knap , D. Seliuta et al.
Applied Physics Letters, 2006, 89, pp.131926-1-3
Article dans une revue hal-00154920 v1

Room-temperature terahertz emission from nanometer field-effect transistors

N. Dyakonova , A.E. Fatimy , J. Lusakowski , W. Knap , M.I. Dyakonov et al.
Applied Physics Letters, 2006, 88, pp.141906-1-3
Article dans une revue hal-00126524 v1

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova , A. El Fatimy , J. Lusakowski , W. Knap , Michel Dyakonov et al.
Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩
Article dans une revue hal-00264792 v1

Characterization of superconductor coplanar resonators deposited on different substrates by thermal coevaporation

D. Seron , H. Kokabi , Georges Alquié , Yannick Roelens , Nour Eddine Bourzgui et al.
Journal of Superconductivity and Novel Magnetism, 2006, Proceedings of the 8th Symposium on High Temperature Superconductors in High Frequency Fields, 19 (7-8), pp.661-667. ⟨10.1007/s10948-006-0127-1⟩
Article dans une revue istex hal-00243995 v1

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

Abdelouahad El Fatimy , Frederic Teppe , Nina Diakonova , Wojciech Knap , D. Seliuta et al.
Applied Physics Letters, 2006, 89, pp.131926. ⟨10.1063/1.2358816⟩
Article dans une revue hal-00540634 v1

Low and room temperature studies of RF to DC rectifiers based on ballistic transport

L. Berdnarz , R. Rashmi , B. Hackens , V. Bayot , S. Huynen et al.
Microelectronic Engineering, 2005, 81, pp.194-200
Article dans une revue hal-00125160 v1
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Voltage tunable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor

J. Lusakowski , W. Knap , N. Dyakonova , L. Varani , J. Mateos et al.
Journal of Applied Physics, 2005, 97, pp.64307-1-7
Article dans une revue hal-00125162 v1

Nonlinear effects in T-branch junctions

J. Mateos , B.G. Vasallo , D. Pardo , T. Gonzales , E. Pichonat et al.
IEEE Electron Device Letters, 2004, 25, pp.235-237
Article dans une revue hal-00133878 v1

Ballistic nanodevices for terahertz data processing : Monte Carlo simulations

J. Mateos , B.G. Vasallo , D. Pardo , T. Gonzales , Yannick Roelens et al.
Nanotechnology, 2003, 14, pp.117-122
Article dans une revue hal-00145979 v1

Microscopic modeling of nonlinear transport in ballistic nanodevices

J. Mateos , B.G. Vasallo , D. Pardo , J.S. Galloo , S. Bollaert et al.
IEEE Transactions on Electron Devices, 2003, 50, pp.1897-1905
Article dans une revue hal-00145980 v1

19 mW/μm² and 24.5 % PAE at 94 GHz for 0.30-μm Transferred InP/GaAsSb DHBT on Si-HR

Abdelmalek Zemour , Malek Zegaoui , Yannick Roelens , Etienne Okada , Pascal Chevalier et al.
DRC 2025 | The 83rd Device Research Conference, Jun 2025, Duke University, Durham, North Carolina, United States
Communication dans un congrès hal-05145163 v1
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Fabrication et caractérisation de diodes Schottky GaN dans un TP innovant au sein du PLFM de Lille

Mahmoud ABOU DAHER , M Laddada , I Nhaila , Saliha Ouendi , Yannick Roelens et al.
Dix-huitièmes journées Pédagogiques CNFM, JPCNFM 2025, Pôle CNFM de Rennes, Centre Commun de Microélectronique de l'Ouest, Dec 2025, Saint-Malo, France
Communication dans un congrès hal-05400823 v1

19 mW/μm<sup>2</sup> and 24.5 % PAE at 94 GHz for 0.30-μm Transferred InP/GaAsSb DHBT on Si-HR

Abdelmalek Zemour , Malek Zegaoui , Yannick Roelens , Etienne Okada , Pascal Chevalier et al.
2025 Device Research Conference (DRC), Jun 2025, Durham, NC, United States. pp.1 - 2, ⟨10.1109/drc66027.2025.11105732⟩
Communication dans un congrès hal-05308750 v1

13 mW/μm² and 24 % PAE at 94 GHz for 0.44-μm Transferred InP/GaAsSb DHBT on Si

Abdelmalek Zemour , Malek Zegaoui , Yannick Roelens , Etienne Okada , Pascal Chevalier et al.
48th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 19th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2025, Cadix, Spain
Communication dans un congrès hal-05145160 v1

GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

Beatriz Orfao , Mohammed Zaknoune , Malek Zegaoui , Javier Mateos , Tomás González et al.
2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.375-378, ⟨10.23919/EuMIC61603.2024.10732802⟩
Communication dans un congrès hal-04765693 v1

Integration of InP Based Double Heterojunction Bipolar Transistor on Silicon Interposer and Associated RF Characterization

A. Oliveira , O. Valorge , A. Divay , H. Boutry , T. Mourier et al.
2024 54th European Microwave Conference (EuMC), Sep 2024, Paris, France. pp.768-771, ⟨10.23919/EuMC61614.2024.10732598⟩
Communication dans un congrès hal-04764934 v1

Characterization of Schottky Diodes at Wafer Level for Frequency Multipliers Applications Based on RF Coplanar Measurements

Hugo Bouillaud , Yannick Roelens , Etienne Okada , Jeanne Treuttel , Priyanka Mondal et al.
2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.387-390, ⟨10.23919/EuMIC61603.2024.10732752⟩
Communication dans un congrès hal-04765465 v1

Enhanced RF Switch Performance in RFSOI Technology: Achieving 74 fs R ON ·C OFF and 3.3 V RFV MAX on Thinned SOI

Thomas Bordignon , Luca Lucci , Thibaud Fache , Clément Pribat , Magali Grégoire et al.
2024 IEEE European Solid-State Electronics Research Conference (ESSERC), Sep 2024, Bruges, Belgium. pp.448-451, ⟨10.1109/ESSERC62670.2024.10719593⟩
Communication dans un congrès hal-04786482 v1

Aggregated 0.3 Tbit/s link using Photonics-transmitter and micromachined flat array antenna over 315-410 GHz

Hadjer Nihel Khelil , Alexandre Renau , Pascal Szriftgiser , Yannick Roelens , Rédha Kassi et al.
2024 54th European Microwave Conference (EuMC), Sep 2024, Paris, France. pp.413-416, ⟨10.23919/EuMC61614.2024.10732246⟩
Communication dans un congrès hal-04764889 v1
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Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz

Mahmoud ABOU DAHER , Hugo Bouillaud , Pawel Prystawko , Michal Bockowski , Etienne Okada et al.
WOCSDICE-EXMATEC, May 2023, Palerme (Italie), Italy
Communication dans un congrès hal-04517550 v1

RF Performances and De-Embedding Techniques of Passive Devices in 3D Homogeneous Integration at Sub-THz

A. Oliveira , O. Valorge , C. Dubarry , Y. Roelens , M. Zaknoune et al.
2023 53rd European Microwave Conference (EuMC), Sep 2023, Berlin, Germany. pp.616-619, ⟨10.23919/EuMC58039.2023.10290293⟩
Communication dans un congrès hal-04370209 v1
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Development Status of Millimeter Wave GaN Schottky Doublers above W-band for the Implementation of European Terahertz Sources for Astronomy and Astrophysics

P. Mondal , G. D. Gioia , H. Bouillaud , Yannick Roelens , T. Vacelet et al.
Nano, Meso, Micro: Science and Innovation for Radio and Photonic, URSI JS22, Mar 2022, Palaiseau, France. pp.87-96
Communication dans un congrès hal-03835088 v1
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GaAs Schottky Diodes Development for Millimeter Wave Doubler

H. Bouillaud , Priyanka Mondal , Giuseppe Di Gioia , Mohammed Samnouni , Malek Zegaoui et al.
Wocsdice 2021 - 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Oct 2021, Bristol, United Kingdom
Communication dans un congrès hal-03827748 v1
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GaN schottky diode on silicon substrate for high power THz multiplier

Giuseppe Di Gioia , M Samnouni , H Bouillaud , P Mondal , J Treuttel et al.
WOCSDICE 2021, Jun 2021, Bristol, United Kingdom
Communication dans un congrès hal-03384345 v1
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GaN Schottky Diode for High Power THz Generation using Multiplier Principle

Giuseppe Di Gioia , V K Chinni , Malek Zegaoui , Y Cordier , A Maestrini et al.
Proc. 43rd Workshop Compound Semiconductor Devices Integr. Circuits (WOCSDICE), Jun 2019, Cabourg, France
Communication dans un congrès hal-03384353 v1

THz detection using InP-HEMT and slot-ring antenna

Philippe Artillan , Yannick Roelens , S. Bollaert
7th THz days Groupement de Recherche international (GDRi-THz’13), Mar 2013, Cargèse, France
Communication dans un congrès hal-04712892 v1

Réalisation et caractérisation de transistors à effet de champ à hétérojonction de la filière InAlAs/InGaAs sur substrat flexible

J.S. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA-P9, 4 p
Communication dans un congrès hal-00878373 v1

InAlAs/InGaAa HEMTs on polyimide flexible substrate with high cut-off frequencies

J.S. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
Journées Nationales Technologies Emergentes en Micro-Nanofabrication, JNTE 2013, 2013, Evian, France
Communication dans un congrès hal-00813609 v1

120nm AlSb/InAs HEMT without gate recess : 290GHz fT and 335GHz fmax

C. Gardes , S.M. Bagumako , L. Desplanque , Nicolas Wichmann , Francois Danneville et al.
25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, 2013, Kobe, Japan. paper MoPI-25, 2 p., ⟨10.1109/ICIPRM.2013.6562604⟩
Communication dans un congrès hal-00877719 v1

Low-IQ : MMIC ultra faible consommation cryogénique et ambiant pour télécommunications spatiales en bande Q

S. Bollaert , Francois Danneville , Yannick Roelens , L. Desplanque , Cyrille Gardes et al.
Les Rencontres du Numérique, 2013, Paris, France
Communication dans un congrès hal-00974542 v1

Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate

S. Bollaert , J.S. Shi , Nicolas Wichmann , Yannick Roelens
71st Annual Device Research Conference, DRC 2013, 2013, Notre Dame, IN, United States. paper III-31, 111-112, ⟨10.1109/DRC.2013.6633818⟩
Communication dans un congrès hal-00904681 v1

High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate

J. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.15-16
Communication dans un congrès hal-00828414 v1

HEMTs 100nm AlSb/InAs pour applications faible bruit, faible consommation

S. Bagumako , C. Gardes , L. Desplanque , Nicolas Wichmann , Francois Danneville et al.
18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA1-3, 4 p
Communication dans un congrès hal-00878375 v1

100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies

J.S. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩
Communication dans un congrès hal-00801043 v1

Lattice matched and pseudomorphic InGaAs MOSHEMT with fT of 200GHz

J.J. Mo , Nicolas Wichmann , Yannick Roelens , M. Zaknoune , L. Desplanque et al.
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.44-47, ⟨10.1109/ICIPRM.2012.6403314⟩
Communication dans un congrès hal-00801055 v1

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2
Communication dans un congrès hal-00801047 v1

Self aligned 200nm In0.53Ga0.47As

A. Olivier , J.J. Mo , Nicolas Wichmann , Yannick Roelens , L. Desplanque et al.
TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Morocco. CDROM, session A1, papier 164, 1-3
Communication dans un congrès hal-00591363 v1

Optimisation des performances à faible tension de polarisation de HEMTs de la filière antimoine

A. Noudeviwa , A. Olivier , Yannick Roelens , Francois Danneville , Nicolas Wichmann et al.
17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 304, 2C2, 1-4
Communication dans un congrès hal-00597144 v1

120nm AlSb/InAs HEMTs

Yannick Roelens , A. Olivier , A. Noudeviwa , L. Desplanque , Francois Danneville et al.
TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A1, papier 185, 1-4
Communication dans un congrès hal-00591362 v1

50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz

J.J. Mo , Nicolas Wichmann , Yannick Roelens , M. Zaknoune , L. Desplanque et al.
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2
Communication dans un congrès hal-00799699 v1

Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 300nm

J. Mo , A. Olivier , Nicolas Wichmann , Yannick Roelens , L. Desplanque et al.
17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 122, 2C3, 1-4
Communication dans un congrès hal-00597145 v1

THz emission induced by sub-threshold instability optical excited in nanometer-length field-effect transistors

P. Nouvel , J. Torres , H. Marinchio , A. Penot , C. Palermo et al.
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2
Communication dans un congrès hal-00799965 v1

Terahertz Emissions from Optically Excited Plasma Oscillations in HEMTs

Jérémie Torres , Frédéric Teppe , Philippe Nouvel , Stéphane Boubanga-Tombet , Amine El Moutaouakil et al.
17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra; Stephen M. Goodnick, Jul 2011, Santa Barbara, United States
Communication dans un congrès hal-02455732 v1

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrates

J. Shi , Nicolas Wichmann , Yannick Roelens , S. Bollaert
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2
Communication dans un congrès hal-00799793 v1

[Invited] AlSb/InAs HEMTs : an option for performance/power trade-off ?

Yannick Roelens
European Microwave Week, EuMIC, Workshop W07 - High-performance narrow-bandgap HEMT technology for advanced microwave front-ends : towards the end of the roadmap ?, 2011, Manchester, United Kingdom
Communication dans un congrès hal-00807120 v1

100nm-gate-length In0.47Ga0.53As multi-gate MOSFET : fabrication and characterisation

J.J. Mo , Nicolas Wichmann , Yannick Roelens , M. Zaknoune , L. Desplanque et al.
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. pp.1-4
Communication dans un congrès hal-00799971 v1

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier , Nicolas Wichmann , Jiongjong Mo , Albert M.D. Noudeviwa , Yannick Roelens et al.
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
Communication dans un congrès hal-00549921 v1

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMTs

Laurent Chusseau , J. Torres , P. Nouvel , H. Marinchio , L. Varani et al.
SPIE Photonics West - OPTO : Quantum Sensing and Nanophotonic Devices VII, 2010, San Francisco, CA, United States
Communication dans un congrès hal-01904174 v1

Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

Albert M.D. Noudeviwa , Yannick Roelens , Francois Danneville , Aurélien Olivier , Nicolas Wichmann et al.
5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289
Communication dans un congrès hal-00549927 v1

Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics

Yannick Roelens , A. Olivier , L. Desplanque , A. Noudeviwa , Francois Danneville et al.
68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩
Communication dans un congrès hal-00549924 v1

100mV noise performances of Te-doped Sb-HEMT

A. Noudeviwa , A. Olivier , Yannick Roelens , Francois Danneville , Nicolas Wichmann et al.
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩
Communication dans un congrès hal-00549922 v1

High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply

A. Olivier , A. Noudeviwa , Nicolas Wichmann , Yannick Roelens , L. Desplanque et al.
5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.162-165
Communication dans un congrès hal-00549918 v1

Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT

Laurent Chusseau , J. Torres , P. Nouvel , H. Marinchio , L. Varani et al.
OPTO, 2010, San Francisco, United States. pp.760816, ⟨10.1117/12.846874⟩
Communication dans un congrès hal-02443155 v1

Technological bricks and concepts for THz remote sensing

R. Czarny , L. Morvan , Guillaume Pillet , J. P. Schnell , P. Legagneux et al.
IEEE Winter Topicals, 2010, Majorca, Spain
Communication dans un congrès hal-01904171 v1

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Gilles Dambrine , S. Bollaert , Yannick Roelens , A. Noudeviwa , Francois Danneville et al.
67th Device Research Conference, 2009, State College, PA, United States. ⟨10.1109/DRC.2009.5354961⟩
Communication dans un congrès hal-00575689 v1

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

G. Moschetti , P.A. Nilsson , N. Wadefalk , M. Malmkvist , E. Lefebvre et al.
21st IEEE Conference on Indium Phosphide and Related Materials, IPRM'09, 2009, United States. pp.323-325, ⟨10.1109/ICIPRM.2009.5012506⟩
Communication dans un congrès hal-00474100 v1

Low bandgap and plasma wave transistor for THz detection

S. Bollaert , A. Shchepetov , Yannick Roelens , L. Desplanques , X. Wallart et al.
European Microwave Conference, 2009, Rome, Italy
Communication dans un congrès hal-01904180 v1

Spectroscopie terahertz des ondes de plasma excitées par battement optique dans les transistors HEMTs

P. Nouvel , H. Marinchio , J. Torres , C. Palermo , Laurent Chusseau et al.
Journées Térahertz, 2009, Lille, France
Communication dans un congrès hal-01904182 v1

Frequency response of T-shaped three branch junctions as mixers and detectors

I. Iniguez de La Torre , T. Gonzalez , D. Pardo , C. Gardes , Yannick Roelens et al.
7th Spanish Conference on Electron Devices, CDE 09, 2009, Spain. pp.168-171, ⟨10.1109/SCED.2009.4800457⟩
Communication dans un congrès hal-00474095 v1

RF doubling and rectification in Three-Terminal Junctions: experimental characterization and Monte Carlo analysis

I. Iñiguez-De-La-Torre , T. González , D. Pardo , Chantal Gardes , Yannick Roelens et al.
EDISON 16, Aug 2009, France
Communication dans un congrès hal-00401237 v1

Fabrication technology and device performance of ultra-short 30-nm-gate pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTs

Nicolas Wichmann , A. Shchepetov , I. Duszynski , Yannick Roelens , X. Wallart et al.
IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702912⟩
Communication dans un congrès hal-00360404 v1

Tremendous shrinking of terahertz plasmon resonance linewidth in multichannel high-electron-mobility transistor

A. Shchepetov , Chantal Gardes , Yannick Roelens , S. Bollaert , S. Boubanga-Tombet et al.
EOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, France. pp.1-2, CDROM
Communication dans un congrès hal-00360410 v1

Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

B.G. Vasallo , Nicolas Wichmann , S. Bollaert , Yannick Roelens , A. Cappy et al.
IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702973⟩
Communication dans un congrès hal-00800960 v1

Isolation mésa par gravures humide et sèche des HEMTs AlSb/InAs sur substrat InP

A. Olivier , T. Gehin , L. Desplanque , X. Wallart , J. Cheng et al.
11èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2008, 2008, Bordeaux, France
Communication dans un congrès hal-00361522 v1

AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation

A. Olivier , T. Gehin , L. Desplanque , X. Wallart , Yannick Roelens et al.
IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4702979⟩
Communication dans un congrès hal-00360405 v1

Plasma wave detection of sub-terahertz radiation : towards the Dyakonov-Shur instability

S. Boubanga-Tombet , F. Teppe , D. Coquillat , S. Nadar , N. Dyakonova et al.
EOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, France. pp.1-2, CDROM
Communication dans un congrès hal-00360411 v1

HEMTs AlSb/InAs pour applications ultra faible consommation

S. Bollaert , A. Olivier , Yannick Roelens , N. Wichmannn , A. Shchepetov et al.
12èmes Journées Nano, Micro et Optoélectronique, JNMO'08, 2008, St Pierre d'Oléron, France
Communication dans un congrès hal-00361523 v1

(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs

E. Lefebvre , M. Borg , M. Malmkvist , J. Grahn , L. Desplanque et al.
19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.125-128, ⟨10.1109/ICIPRM.2007.381139⟩
Communication dans un congrès hal-00284023 v1

HEMT AlInAs/InGaAs pseudomorphique sur substrat d'InP de longueur de grille de 30nm et de Ft = 450GHz

Nicolas Wichmann , A. Shchepetov , I. Duszynski , Yannick Roelens , X. Wallart et al.
15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D20
Communication dans un congrès hal-00284471 v1

Surface charge effects in ballistic T-branch nanojunctions

I. Iniguez de La Torre , J. Mateos , T. Gonzalez , D. Pardo , S. Bollaert et al.
Spanish Conference on Electron Devices, 2007, Spain. pp.48-51, ⟨10.1109/SCED.2007.383993⟩
Communication dans un congrès hal-00284056 v1

Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime

S. Bollaert , L. Desplanque , X. Wallart , Yannick Roelens , M. Malmkvist et al.
2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.20-23, ⟨10.1109/EMICC.2007.4412637⟩
Communication dans un congrès hal-00362727 v1

Development of InAs/AlSb HEMT technology for high-frequency operation

J. Grahn , E. Lefebvre , M. Borg , M. Malmkvist , L. Desplanque et al.
Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2007, 2007, Venice, Italy
Communication dans un congrès hal-00366992 v1

HEMT AlSb/InAs pour applications ultra-faible consommation

S. Bollaert , Yannick Roelens , L. Desplanques , N. Wichmannn , A. Shchepetov et al.
15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C3-1-4
Communication dans un congrès hal-00370296 v1

Noise behavior of InP-based double-gate and standard HEMTs : a comparison

B.G. Vasallo , T. Gonzalez , D. Pardo , J. Mateos , Nicolas Wichmann et al.
19th International Conference on Noise and Fluctuations, ICNF 2007, 2007, Japan. pp.167-170, ⟨10.1063/1.2759659⟩
Communication dans un congrès hal-00284062 v1

DC and RF performance of 0.2-2.4 µm gate length InAs/AlSb HEMTs

M. Borg , E. Lefebvre , M. Malmkvist , L. Desplanque , X. Wallart et al.
19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.67-70, ⟨10.1109/ICIPRM.2007.381124⟩
Communication dans un congrès hal-00284022 v1

Microwave characterization of supraconducting YBCO coplanar resonators deposited by thermal coevaporation on different substrates

D. Seron , H. Kokabi , Georges Alquié , Yannick Roelens , Nour Eddine Bourzgui et al.
8th Symposium on High-Temperature Superconductors in High-Frequency Fields, May 2004, Parador de Aiguablava, Begur, Spain. pp.661-667, ⟨10.1007/s10948-006-0127-1⟩
Communication dans un congrès istex hal-00133913 v1

Room-temperature terahertz emission from nanometer field-effect transistors

N. Dyakonova , A.E. Fatimy , J. Lusakowski , W. Knap , M.I. Dyakonov et al.
Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. pp.145, ⟨10.1109/ICIMW.2006.368353⟩
Communication dans un congrès hal-00241317 v1

Plasma wave HEMTs for THz applications

A. Shchepetov , Yannick Roelens , S. Bollaert , A. Cappy , N. Dyakonova et al.
Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. pp.136, ⟨10.1109/ICIMW.2006.368344⟩
Communication dans un congrès hal-00241319 v1

Trends and challenge in micro and nanoelectronics device research in Europe

A. Cappy , Nicolas Wichmann , J.S. Galloo , S. Bollaert , Yannick Roelens et al.
Topical Workshop on Heterostructure Microelectronics, TWHM 2005, 2005, Hyogo, Japan
Communication dans un congrès hal-00125339 v1

InP based ballistic nanodevices

A. Cappy , J.S. Galloo , S. Bollaert , Yannick Roelens , J. Mateos et al.
International Conference on Indium Phosphide and Related Materials, IPRM 2005, 2005, Glasgow, Scotland, United Kingdom
Communication dans un congrès hal-00125316 v1

New HEMT structures for THz applications

A. Cappy , Nicolas Wichmann , S. Bollaert , X. Wallart , Yannick Roelens et al.
Device Research Conference, DRC 2005, 2005, Santa Barbara, CA, United States
Communication dans un congrès hal-00125315 v1

Theoretical and experimental characterization of Y-branch nanojunction rectifier up to 94 GHz

L. Bednarz , R. Rashmi , G. Farhi , B. Hackens , V. Bayot et al.
2005, 4 pp
Communication dans un congrès hal-00154895 v1

Nanotransistors pour émission THz

S. Bollaert , Yannick Roelens , A. Shchepetov , X. Wallart , A. Cappy et al.
3èmes Journées THz, 2005, Aussois, France
Communication dans un congrès hal-00125897 v1

Terahertz emission and noise spectra in HEMTs

J. Mateos , S. Perez , D. Pardo , T. Gonzalez , J. Lusakowski et al.
Terahertz emission and noise spectra in HEMTs, L. Reggiani, 2005, Lecce, Italy. pp.423-430, ⟨10.1063/1.2138647⟩
Communication dans un congrès hal-00154897 v1

HEMTs for millimeter and sub-millimeter waves applications

S. Bollaert , A. Cappy , Gilles Dambrine , I. Duszynski , Yannick Roelens et al.
GDR THz, 2005, Montpellier, France
Communication dans un congrès hal-00125314 v1

Technologie, simulation et caractérisation à T=300K de dispositifs balistiques de type GaInAs/AlInAs avec grille de commande

J.S. Galloo , C. Gardes , Z. Teukam , Yannick Roelens , S. Bollaert et al.
Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France
Communication dans un congrès hal-00126725 v1

Ballistic devices based on T-branch junctions and Y-branch junctions on GaInAs/AlInAs heterostructure

J.S. Galloo , Yannick Roelens , S. Bollaert , E. Pichonat , X. Wallart et al.
2004, pp.219-222
Communication dans un congrès hal-00133884 v1

Technologie pour dispositifs AlInAs/GaInAs

J.S. Galloo , E. Pichonat , S. Bollaert , Yannick Roelens , X. Wallart et al.
GDR Nanoélectronique, 2004, Aussois, France
Communication dans un congrès hal-00133917 v1

Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

Jean-Sebastien Galloo , Emmanuelle Pichonat , Yannick Roelens , S. Bollaert , X. Wallart et al.
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩
Communication dans un congrès hal-00133896 v1

Nanoscaled double Y-Branch junction operating as room temperature RF to DC rectifier

Lukasz Bednarz , R. Rashmi , Benoit Hackens , Hervé Boutry , Vincent Bayot et al.
4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.284-286, ⟨10.1109/NANO.2004.1392326⟩
Communication dans un congrès hal-00133899 v1

Ballistic GaInAs/AlInAs devices technology and characterization at room temperature

J.S. Galloo , Yannick Roelens , S. Bollaert , Emmanuelle Pichonat , X. Wallart et al.
4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.98-100, ⟨10.1109/NANO.2004.1392262⟩
Communication dans un congrès hal-00133881 v1

Technological fabrication of nanometric GaInAs/AlInAs ballistic devices

Jean-Sebastien Galloo , Emmanuelle Pichonat , Yannick Roelens , S. Bollaert , X. Wallart et al.
Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain
Communication dans un congrès hal-00146040 v1

Composants balistiques pour applications térahertz

S. Bollaert , Yannick Roelens , Jean-Sebastien Galloo , Isabelle Huynen , Hervé Boutry et al.
GDR Nanoélectronique : 1ères Journées Nationales Composants pour la micro et nano-électronique, 4èmes Journées Nationales Hétérostructures de semiconducteurs IV-IV, 2003, Grenoble, France
Communication dans un congrès hal-00146019 v1

Résonateurs coplanaires supraconducteurs YBaCuO

Yannick Roelens , Nour Eddine Bourzgui , Jean-Claude Carru
Colloque TELECOM 03 et 3èmes Journées Franco-Maghrébines des Microondes et leurs Applications (JFMMA 2003), Oct 2003, Marrakech, Maroc
Communication dans un congrès hal-00146029 v1

Fabrication of nano-ballistic devices using high resolution process

Emmanuelle Pichonat , Jean-Sebastien Galloo , Yannick Roelens , S. Bollaert , X. Wallart et al.
Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain
Communication dans un congrès hal-00146012 v1

Room temperature nonlinear transport in InGaAs/InAlAs based ballistic nanodevices

Javier Mateos , B.G. Vasallo , Daniel Pardo , Tomás González , Hervé Boutry et al.
International Conference onIndium Phosphide and Related Materials, May 2003, Barbara, CA, France. pp.484-487
Communication dans un congrès hal-00145996 v1

Caractérisations micro-ondes par résonateurs coplanaires des films supraconducteurs en YBaCuO déposés par coévaporation thermique

D. Seron , H. Kokabi , Georges Alquié , Yannick Roelens , Nour Eddine Bourzgui et al.
Conference Internationale Optique Hertzienne et Diélectrique (OHD 2003), Sep 2003, Calais, France
Communication dans un congrès hal-00146018 v1

Lignes coplanaires hautes impédances, influence d'une couche diélectrique

Yannick Roelens , J.S. Galloo , E. Pichonat , S. Bollaert , G. Six et al.
Optique Hertzienne et Diélectrique, OHD 2003, 2003, Calais, France
Communication dans un congrès hal-00146017 v1

Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot

Yannick Roelens , Benoit Hackens , Sébastien Faniel , Cédric Gustin , Hervé Boutry et al.
International Conference on Superlattices Nano-structures and Nano-devices, ICSNN-02, Jul 2002, Toulouse, France
Communication dans un congrès hal-00147857 v1

Etude expérimentale de résonateurs coplanaires supraconducteurs YBaCuO

Yannick Roelens , M. Achani , Nour Eddine Bourzgui , Jean-Claude Carru
7èmes Journées de Caractérisation Micro-ondes et Matériaux (JCMM 2002), Mar 2002, Toulouse, France
Communication dans un congrès hal-00147858 v1

Effects of substrate preparation on properties of YBaCuO thin films

A. Dégardin , X. Castel , M. Achani , Maryline Guilloux-Viry , E. Caristan et al.
2000, pp.1993-1994
Communication dans un congrès hal-00157906 v1

Alternative and low-cost technique to transfer III-V DHBT transistors onto Si-HR using Cu-Cu bonding for sub-THz power amplification for 6G

Jihed Derouiche , Abdelmalek Zemour , Malek Zegaoui , Yannick Roelens , Pascal Chevalier et al.
WOCSDICE - EXMATEC 2025, Jun 2025, Cádiz, Spain
Poster de conférence hal-05186867 v1

Experimental and theoretical investigation of optically excited THz plasma waves in submicron InGaA HEMTs

H. Marinchio , G. Sabatini , T. Laurent , J. Pousset , C. Palermo et al.
European Optical Society Annual Meeting (EOSAM 2008), 2008, Paris, France. Actes de Journées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM)
Poster de conférence hal-02442942 v1
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Signal-to-noise ratio in Terahertz wireless communication using field-effect-transistors as detectors

L. Tohme , S. Blin , P. Nouvel , A. Pénarier , J. Torres et al.
2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), IEEE, pp.1-3, 2013, ⟨10.1109/ICNF.2013.6578992⟩
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Dispositifs à matériaux petit gap pour électronique ultra-faible consommation

S. Bollaert , A. Olivier , Nicolas Wichmann , Yannick Roelens , L. Desplanque et al.
Leray J.L., Boudenot J.C., Gautier J. La micro-nano électronique, enjeux et mutations, CNRS ÉDITIONS, pp.183-186, 2009
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