Yannick ROELENS
Publications
Publications
19 mW/μm² and 24.5 % PAE at 94 GHz for 0.30-μm Transferred InP/GaAsSb DHBT on Si-HRDRC 2025 | The 83rd Device Research Conference, Jun 2025, Duke University, Durham, North Carolina, United States |
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Fabrication et caractérisation de diodes Schottky GaN dans un TP innovant au sein du PLFM de LilleDix-huitièmes journées Pédagogiques CNFM, JPCNFM 2025, Pôle CNFM de Rennes, Centre Commun de Microélectronique de l'Ouest, Dec 2025, Saint-Malo, France |
19 mW/μm<sup>2</sup> and 24.5 % PAE at 94 GHz for 0.30-μm Transferred InP/GaAsSb DHBT on Si-HR2025 Device Research Conference (DRC), Jun 2025, Durham, NC, United States. pp.1 - 2, ⟨10.1109/drc66027.2025.11105732⟩ |
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13 mW/μm² and 24 % PAE at 94 GHz for 0.44-μm Transferred InP/GaAsSb DHBT on Si48th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 19th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2025, Cadix, Spain |
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GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.375-378, ⟨10.23919/EuMIC61603.2024.10732802⟩ |
Integration of InP Based Double Heterojunction Bipolar Transistor on Silicon Interposer and Associated RF Characterization2024 54th European Microwave Conference (EuMC), Sep 2024, Paris, France. pp.768-771, ⟨10.23919/EuMC61614.2024.10732598⟩ |
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Characterization of Schottky Diodes at Wafer Level for Frequency Multipliers Applications Based on RF Coplanar Measurements2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.387-390, ⟨10.23919/EuMIC61603.2024.10732752⟩ |
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Aggregated 0.3 Tbit/s link using Photonics-transmitter and micromachined flat array antenna over 315-410 GHz2024 54th European Microwave Conference (EuMC), Sep 2024, Paris, France. pp.413-416, ⟨10.23919/EuMC61614.2024.10732246⟩ |
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Enhanced RF Switch Performance in RFSOI Technology: Achieving 74 fs R ON ·C OFF and 3.3 V RFV MAX on Thinned SOI2024 IEEE European Solid-State Electronics Research Conference (ESSERC), Sep 2024, Bruges, Belgium. pp.448-451, ⟨10.1109/ESSERC62670.2024.10719593⟩ |
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Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHzWOCSDICE-EXMATEC, May 2023, Palerme (Italie), Italy |
RF Performances and De-Embedding Techniques of Passive Devices in 3D Homogeneous Integration at Sub-THz2023 53rd European Microwave Conference (EuMC), Sep 2023, Berlin, Germany. pp.616-619, ⟨10.23919/EuMC58039.2023.10290293⟩ |
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Development Status of Millimeter Wave GaN Schottky Doublers above W-band for the Implementation of European Terahertz Sources for Astronomy and AstrophysicsNano, Meso, Micro: Science and Innovation for Radio and Photonic, URSI JS22, Mar 2022, Palaiseau, France. pp.87-96 |
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GaAs Schottky Diodes Development for Millimeter Wave DoublerWocsdice 2021 - 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Oct 2021, Bristol, United Kingdom |
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GaN schottky diode on silicon substrate for high power THz multiplierWOCSDICE 2021, Jun 2021, Bristol, United Kingdom |
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GaN Schottky Diode for High Power THz Generation using Multiplier PrincipleProc. 43rd Workshop Compound Semiconductor Devices Integr. Circuits (WOCSDICE), Jun 2019, Cabourg, France |
THz detection using InP-HEMT and slot-ring antenna7th THz days Groupement de Recherche international (GDRi-THz’13), Mar 2013, Cargèse, France |
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InAlAs/InGaAa HEMTs on polyimide flexible substrate with high cut-off frequenciesJournées Nationales Technologies Emergentes en Micro-Nanofabrication, JNTE 2013, 2013, Evian, France |
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120nm AlSb/InAs HEMT without gate recess : 290GHz fT and 335GHz fmax25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, 2013, Kobe, Japan. paper MoPI-25, 2 p., ⟨10.1109/ICIPRM.2013.6562604⟩ |
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Réalisation et caractérisation de transistors à effet de champ à hétérojonction de la filière InAlAs/InGaAs sur substrat flexible18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA-P9, 4 p |
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Low-IQ : MMIC ultra faible consommation cryogénique et ambiant pour télécommunications spatiales en bande QLes Rencontres du Numérique, 2013, Paris, France |
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High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.15-16 |
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HEMTs 100nm AlSb/InAs pour applications faible bruit, faible consommation18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA1-3, 4 p |
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Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate71st Annual Device Research Conference, DRC 2013, 2013, Notre Dame, IN, United States. paper III-31, 111-112, ⟨10.1109/DRC.2013.6633818⟩ |
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Lattice matched and pseudomorphic InGaAs MOSHEMT with fT of 200GHz24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.44-47, ⟨10.1109/ICIPRM.2012.6403314⟩ |
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100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩ |
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Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2 |
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Self aligned 200nm In0.53Ga0.47AsTELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Morocco. CDROM, session A1, papier 164, 1-3 |
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Optimisation des performances à faible tension de polarisation de HEMTs de la filière antimoine17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 304, 2C2, 1-4 |
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THz emission induced by sub-threshold instability optical excited in nanometer-length field-effect transistors20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2 |
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Terahertz Emissions from Optically Excited Plasma Oscillations in HEMTs17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra; Stephen M. Goodnick, Jul 2011, Santa Barbara, United States |
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Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrates20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2 |
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[Invited] AlSb/InAs HEMTs : an option for performance/power trade-off ?European Microwave Week, EuMIC, Workshop W07 - High-performance narrow-bandgap HEMT technology for advanced microwave front-ends : towards the end of the roadmap ?, 2011, Manchester, United Kingdom |
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Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 300nm17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 122, 2C3, 1-4 |
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120nm AlSb/InAs HEMTsTELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A1, papier 185, 1-4 |
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50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2 |
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100nm-gate-length In0.47Ga0.53As multi-gate MOSFET : fabrication and characterisation23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. pp.1-4 |
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Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMTsSPIE Photonics West - OPTO : Quantum Sensing and Nanophotonic Devices VII, 2010, San Francisco, CA, United States |
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Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩ |
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100mV noise performances of Te-doped Sb-HEMT8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩ |
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Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩ |
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Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289 |
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High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.162-165 |
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Technological bricks and concepts for THz remote sensingIEEE Winter Topicals, 2010, Majorca, Spain |
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Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMTOPTO, 2010, San Francisco, United States. pp.760816, ⟨10.1117/12.846874⟩ |
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Low bandgap and plasma wave transistor for THz detectionEuropean Microwave Conference, 2009, Rome, Italy |
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Narrow band gap III-V based-FET for ultra low power high frequency analog applications67th Device Research Conference, 2009, State College, PA, United States. ⟨10.1109/DRC.2009.5354961⟩ |
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DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures21st IEEE Conference on Indium Phosphide and Related Materials, IPRM'09, 2009, United States. pp.323-325, ⟨10.1109/ICIPRM.2009.5012506⟩ |
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Spectroscopie terahertz des ondes de plasma excitées par battement optique dans les transistors HEMTsJournées Térahertz, 2009, Lille, France |
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Frequency response of T-shaped three branch junctions as mixers and detectors7th Spanish Conference on Electron Devices, CDE 09, 2009, Spain. pp.168-171, ⟨10.1109/SCED.2009.4800457⟩ |
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RF doubling and rectification in Three-Terminal Junctions: experimental characterization and Monte Carlo analysisEDISON 16, Aug 2009, France |
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Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTsIEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702973⟩ |
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Fabrication technology and device performance of ultra-short 30-nm-gate pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTsIEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702912⟩ |
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Tremendous shrinking of terahertz plasmon resonance linewidth in multichannel high-electron-mobility transistorEOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, France. pp.1-2, CDROM |
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Isolation mésa par gravures humide et sèche des HEMTs AlSb/InAs sur substrat InP11èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2008, 2008, Bordeaux, France |
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AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolationIEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4702979⟩ |
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HEMTs AlSb/InAs pour applications ultra faible consommation12èmes Journées Nano, Micro et Optoélectronique, JNMO'08, 2008, St Pierre d'Oléron, France |
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Plasma wave detection of sub-terahertz radiation : towards the Dyakonov-Shur instabilityEOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology, 2008, France. pp.1-2, CDROM |
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(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.125-128, ⟨10.1109/ICIPRM.2007.381139⟩ |
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HEMT AlInAs/InGaAs pseudomorphique sur substrat d'InP de longueur de grille de 30nm et de Ft = 450GHz15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D20 |
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Development of InAs/AlSb HEMT technology for high-frequency operationProceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2007, 2007, Venice, Italy |
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HEMT AlSb/InAs pour applications ultra-faible consommation15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C3-1-4 |
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Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.20-23, ⟨10.1109/EMICC.2007.4412637⟩ |
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Surface charge effects in ballistic T-branch nanojunctionsSpanish Conference on Electron Devices, 2007, Spain. pp.48-51, ⟨10.1109/SCED.2007.383993⟩ |
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Noise behavior of InP-based double-gate and standard HEMTs : a comparison19th International Conference on Noise and Fluctuations, ICNF 2007, 2007, Japan. pp.167-170, ⟨10.1063/1.2759659⟩ |
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DC and RF performance of 0.2-2.4 µm gate length InAs/AlSb HEMTs19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.67-70, ⟨10.1109/ICIPRM.2007.381124⟩ |
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Microwave characterization of supraconducting YBCO coplanar resonators deposited by thermal coevaporation on different substrates8th Symposium on High-Temperature Superconductors in High-Frequency Fields, May 2004, Parador de Aiguablava, Begur, Spain. pp.661-667, ⟨10.1007/s10948-006-0127-1⟩ |
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Room-temperature terahertz emission from nanometer field-effect transistorsJoint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. pp.145, ⟨10.1109/ICIMW.2006.368353⟩ |
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Plasma wave HEMTs for THz applicationsJoint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. pp.136, ⟨10.1109/ICIMW.2006.368344⟩ |
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Theoretical and experimental characterization of Y-branch nanojunction rectifier up to 94 GHz2005, 4 pp |
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New HEMT structures for THz applicationsDevice Research Conference, DRC 2005, 2005, Santa Barbara, CA, United States |
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Nanotransistors pour émission THz3èmes Journées THz, 2005, Aussois, France |
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InP based ballistic nanodevicesInternational Conference on Indium Phosphide and Related Materials, IPRM 2005, 2005, Glasgow, Scotland, United Kingdom |
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Trends and challenge in micro and nanoelectronics device research in EuropeTopical Workshop on Heterostructure Microelectronics, TWHM 2005, 2005, Hyogo, Japan |
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Terahertz emission and noise spectra in HEMTsTerahertz emission and noise spectra in HEMTs, L. Reggiani, 2005, Lecce, Italy. pp.423-430, ⟨10.1063/1.2138647⟩ |
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Technologie, simulation et caractérisation à T=300K de dispositifs balistiques de type GaInAs/AlInAs avec grille de commandeActes des 14èmes Journées Nationales Microondes, 2005, Nantes, France |
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HEMTs for millimeter and sub-millimeter waves applicationsGDR THz, 2005, Montpellier, France |
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Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩ |
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Technologie pour dispositifs AlInAs/GaInAsGDR Nanoélectronique, 2004, Aussois, France |
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Ballistic devices based on T-branch junctions and Y-branch junctions on GaInAs/AlInAs heterostructure2004, pp.219-222 |
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Ballistic GaInAs/AlInAs devices technology and characterization at room temperature4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.98-100, ⟨10.1109/NANO.2004.1392262⟩ |
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Nanoscaled double Y-Branch junction operating as room temperature RF to DC rectifier4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.284-286, ⟨10.1109/NANO.2004.1392326⟩ |
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Technological fabrication of nanometric GaInAs/AlInAs ballistic devicesTrends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain |
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Fabrication of nano-ballistic devices using high resolution processTrends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain |
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Room temperature nonlinear transport in InGaAs/InAlAs based ballistic nanodevicesInternational Conference onIndium Phosphide and Related Materials, May 2003, Barbara, CA, France. pp.484-487 |
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Résonateurs coplanaires supraconducteurs YBaCuOColloque TELECOM 03 et 3èmes Journées Franco-Maghrébines des Microondes et leurs Applications (JFMMA 2003), Oct 2003, Marrakech, Maroc |
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Composants balistiques pour applications térahertzGDR Nanoélectronique : 1ères Journées Nationales Composants pour la micro et nano-électronique, 4èmes Journées Nationales Hétérostructures de semiconducteurs IV-IV, 2003, Grenoble, France |
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Caractérisations micro-ondes par résonateurs coplanaires des films supraconducteurs en YBaCuO déposés par coévaporation thermiqueConference Internationale Optique Hertzienne et Diélectrique (OHD 2003), Sep 2003, Calais, France |
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Lignes coplanaires hautes impédances, influence d'une couche diélectriqueOptique Hertzienne et Diélectrique, OHD 2003, 2003, Calais, France |
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Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dotInternational Conference on Superlattices Nano-structures and Nano-devices, ICSNN-02, Jul 2002, Toulouse, France |
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Etude expérimentale de résonateurs coplanaires supraconducteurs YBaCuO7èmes Journées de Caractérisation Micro-ondes et Matériaux (JCMM 2002), Mar 2002, Toulouse, France |
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Effects of substrate preparation on properties of YBaCuO thin films2000, pp.1993-1994 |
Alternative and low-cost technique to transfer III-V DHBT transistors onto Si-HR using Cu-Cu bonding for sub-THz power amplification for 6GWOCSDICE - EXMATEC 2025, Jun 2025, Cádiz, Spain |
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Experimental and theoretical investigation of optically excited THz plasma waves in submicron InGaA HEMTsEuropean Optical Society Annual Meeting (EOSAM 2008), 2008, Paris, France. Actes de Journées Nationales Du Réseau Doctoral de Micro-électronique (JNRDM) |
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Signal-to-noise ratio in Terahertz wireless communication using field-effect-transistors as detectors2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), IEEE, pp.1-3, 2013, ⟨10.1109/ICNF.2013.6578992⟩ |
Dispositifs à matériaux petit gap pour électronique ultra-faible consommationLeray J.L., Boudenot J.C., Gautier J. La micro-nano électronique, enjeux et mutations, CNRS ÉDITIONS, pp.183-186, 2009 |