Yvon Cordier

271
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Publications

Publications

Investigation of MoS2 growth on GaN/sapphire substrate using molecular beam epitaxy

Mohamed Al Khalfioui , Minh-Tuan Dau , Zineb Bouyid , Ileana Florea , Philippe Vennéguès et al.
Journal of Crystal Growth, 2025, 652, pp.128047. ⟨10.1016/j.jcrysgro.2024.128047⟩
Article dans une revue hal-04901653 v1
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ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate

Caroline Elias , Sébastien Chenot , Florian Bartoli , Maxime Hugues , Yvon Cordier
Physica Status Solidi A (applications and materials science), 2025, ⟨10.1002/pssa.202400963⟩
Article dans une revue hal-04935622 v1
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ScAlN/GaN-on-Si (111) HEMTs for RF applications

Seif El Whibi , Nagesh Bhat , Yassine Fouzi , Nicolas Defrance , Jean-Claude de Jaeger et al.
Applied Physics Express, 2025, 18 (4), pp.046501. ⟨10.35848/1882-0786/adc5db⟩
Article dans une revue hal-05008937 v1
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Modeling and Extraction of the Specific Contact Resistance of GaN p-i-n Diodes up to 40 GHz

Kevin Nadaud , Zihao Lyu , Daniel Alquier , Quentin Paoli , Julien Ladroue et al.
IEEE Transactions on Electron Devices, 2025, 72 (4), pp.1657-1662. ⟨10.1109/TED.2025.3539644⟩
Article dans une revue hal-04949503 v1
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Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Adrien Bidaud , Pierre Brosselard , Eric Frayssinet et al.
Power Electronic Devices and Components, 2025, 11, pp.100100. ⟨10.1016/j.pedc.2025.100100⟩
Article dans une revue hal-05099383 v1

New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations

Vishwajeet Maurya , Daniel Alquier , Maroun Dagher , Camille Sonneville , Dominique Planson et al.
Materials Science in Semiconductor Processing, 2025, 198, pp.109681. ⟨10.1016/j.mssp.2025.109681⟩
Article dans une revue hal-05099324 v1
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Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors

Micka Bah , Daniel Alquier , Marie Lesecq , Nicolas Defrance , Damien Valente et al.
Materials Science in Semiconductor Processing, 2024, 171, pp.107977. ⟨10.1016/j.mssp.2023.107977⟩
Article dans une revue hal-04378667 v1
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Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs

Valentin Ackermann , Blend Mohamad , Hala El Rammouz , Vishwajeet Maurya , Eric Frayssinet et al.
Electronics, 2024, 13 (12), pp.2350. ⟨10.3390/electronics13122350⟩
Article dans une revue hal-04673055 v1
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Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Julien Bassaler , Jash Mehta , Idriss Abid , Leszek Konczewicz , Sandrine Juillaguet et al.
Advanced Electronic Materials, In press, ⟨10.1002/aelm.202400069⟩
Article dans une revue hal-04665123 v1
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Fabrication, and direct current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

Quentin Fornasiero , Nicolas Defrance , Sylvie Lepilliet , Vanessa Avramovic , Yvon Cordier et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2023, 41 (1), pp.012202. ⟨10.1116/6.0002125⟩
Article dans une revue hal-03917965 v1
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High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

G. Di Gioia , E. Frayssinet , M. Samnouni , V. Chinni , P. Mondal et al.
Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩
Article dans une revue hal-04115301 v1
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Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics

J. Mehta , Idriss Abid , Reda Elwaradi , Yvon Cordier , F Medjdoub
e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 5, pp.100263. ⟨10.1016/j.prime.2023.100263⟩
Article dans une revue hal-04194891 v1
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High Al-content AlGaN channel high electron mobility transistors on silicon substrate

Jash Mehta , Idriss Abid , Julien Bassaler , Julien Pernot , Philippe Ferrandis et al.
e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2023, 3, pp.100114. ⟨10.1016/j.prime.2023.100114⟩
Article dans une revue hal-03952273 v1
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Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Marianna Španková , Štefan Chromik , Edmund Dobročka , Lenka Pribusová Slušná , Marcel Talacko et al.
Nanomaterials, 2023, 13 (21), pp.2837. ⟨10.3390/nano13212837⟩
Article dans une revue hal-04791706 v1

Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography

Samba Ndiaye , Caroline Elias , Aissatou Diagne , Hélène Rotella , Frédéric Georgi et al.
Applied Physics Letters, 2023, 123, pp.162102. ⟨10.1063/5.0167855⟩
Article dans une revue hal-04351608 v1
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Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Giuseppe Greco , Patrick Fiorenza , Emanuela Schilirò , Corrado Bongiorno , Salvatore Di Franco et al.
Microelectronic Engineering, 2023, 276, pp.112009. ⟨10.1016/j.mee.2023.112009⟩
Article dans une revue hal-04092737 v1
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Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate

Reda Elwaradi , Jash Mehta , Thi Huong Ngo , Maud Nemoz , Catherine Bougerol et al.
Journal of Applied Physics, 2023, 133 (14), pp.145705. ⟨10.1063/5.0147048⟩
Article dans une revue hal-04086494 v1
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

R. Aristegui , P. Lefebvre , C. Brimont , T. Guillet , M. Vladimirova et al.
Physical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩
Article dans une revue hal-04251300 v1
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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq , Yassine Fouzi , Ali Abboud , N. Defrance , Francois Vaurette et al.
Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩
Article dans une revue hal-04084512 v1
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Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Caroline Elias , Maud Nemoz , Hélène Rotella , Frédéric Georgi , Stéphane Vézian et al.
APL Materials, 2023, 11 (3), ⟨10.1063/5.0139588⟩
Article dans une revue hal-04240341 v1
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

B. Orfao , G. Di Gioia , B. Vasallo , S. Pérez , J. Mateos et al.
Journal of Applied Physics, 2022, 132 (4), pp.044502. ⟨10.1063/5.0100426⟩
Article dans une revue hal-03741441 v1
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Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Julien Bassaler , Rémi Comyn , Catherine Bougerol , Yvon Cordier , Farid Medjdoub et al.
Journal of Applied Physics, 2022, 131 (12), pp.124501. ⟨10.1063/5.0077107⟩
Article dans une revue hal-03619060 v1
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Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui , F. Chiaruttini , B. Jouault , P. Lefebvre , C. Brimont et al.
Physical Review B, 2022, 106 (3), pp.035429. ⟨10.1103/PhysRevB.106.035429⟩
Article dans une revue hal-03759667 v1
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano et al.
Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩
Article dans une revue hal-03467546 v1
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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

P. Quach , A. Jollivet , A. Babichev , N. Isac , M. Morassi et al.
Applied Physics Letters, 2022, 120 (17), pp.171103. ⟨10.1063/5.0086641⟩
Article dans une revue hal-03823140 v1

Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations

Harpreet Kaur , Rajesh Sharma , T. Laurent , J. Torres , P. Nouvel et al.
Applied physics. A, Materials science & processing, 2022, 128 (2), pp.144. ⟨10.1007/s00339-022-05284-8⟩
Article dans une revue hal-03547770 v1

Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Atse Julien Eric N’dohi , Camille Sonneville , Luong Viet Phung , Thi Huong Ngo , Philippe de Mierry et al.
AIP Advances, 2022, 12 (2), pp.025126. ⟨10.1063/5.0082860⟩
Article dans une revue hal-03582833 v1
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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel et al.
Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩
Article dans une revue hal-03826217 v1
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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Maud Nemoz et al.
Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩
Article dans une revue hal-03741626 v1
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Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Gaudencio Paz-Martínez , Ignacio Íñiguez-De-La-Torre , Héctor Sánchez-Martín , José Antonio Novoa-López , Virginie Hoel et al.
Sensors, 2022, 22 (4), pp.1515. ⟨10.3390/s22041515⟩
Article dans une revue hal-03582713 v1
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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marie Lesecq , Eric Frayssinet , Marc Portail , Micka Bah , N. Defrance et al.
Materials Science Forum, 2022, 1062, pp.482-486. ⟨10.4028/p-2wi7o8⟩
Article dans une revue hal-03741438 v1
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New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Flavien Cozette , Bilal Hassan , Christophe Rodriguez , Eric Frayssinet , Rémi Comyn et al.
Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩
Article dans une revue hal-03341284 v1
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Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Florent Albany , François Lecourt , Ewa Walasiak , N. Defrance , Arnaud Curutchet et al.
Microelectronics Reliability, 2021, 126, pp.114291. ⟨10.1016/j.microrel.2021.114291⟩
Article dans une revue hal-03539673 v1
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Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Nedal Al Taradeh , Eric Frayssinet , Christophe Rodriguez , Frédéric Morancho , Camille Sonneville et al.
Energies, 2021, 14 (14), pp.4241. ⟨10.3390/en14144241⟩
Article dans une revue hal-03452669 v1
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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano et al.
Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
Article dans une revue hal-03035072 v1
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AlGaN channel high electron mobility transistors with regrown ohmic contacts

Idriss Abid , Jash Mehta , Yvon Cordier , Joff Derluyn , Stefan Degroote et al.
Electronics, 2021, 10 (6), pp.635. ⟨10.3390/electronics10060635⟩
Article dans une revue hal-03164517 v1
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French ichthyological records for 2018

Samuel P. Iglesias , P. Bergot , P. Breton , S. Brunelle , M. Camusat et al.
Cybium : Revue Internationale d’Ichtyologie, 2020, 44 (4), pp.285-307. ⟨10.26028/cybium/2020-444-001⟩
Article dans une revue hal-03172125 v1
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Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Thi Huong Ngo , Rémi Comyn , Eric Frayssinet , Hyonju Chauveau , Sébastien Chenot et al.
Journal of Crystal Growth, 2020, 552, pp.125911. ⟨10.1016/j.jcrysgro.2020.125911⟩
Article dans une revue hal-03418915 v1
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Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros et al.
Scientific Reports, 2020, 10 (1), pp.14166. ⟨10.1038/s41598-020-71064-0⟩
Article dans une revue hal-02929022 v1
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Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet , Luan Nguyen , Marie Lesecq , N. Defrance , Maxime Garcia Barros et al.
Physica Status Solidi A (applications and materials science), 2020, 217 (7), pp.1900760. ⟨10.1002/pssa.201900760⟩
Article dans une revue hal-02929058 v1

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

F Giannazzo , R Dagher , E Schilirò , S Panasci , G Greco et al.
Nanotechnology, 2020, 32 (1), pp.015705. ⟨10.1088/1361-6528/abb72b⟩
Article dans une revue hal-03035077 v1
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AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology

Mahmoud Abou Daher , Marie Lesecq , Pascal Tilmant , N. Defrance , Michel Rousseau et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (3), pp.033201. ⟨10.1116/1.5143418⟩
Article dans une revue hal-02929037 v1
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2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Mohamed-Reda Irekti , Marie Lesecq , N. Defrance , Etienne Okada , Eric Frayssinet et al.
Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩
Article dans une revue hal-02929065 v1
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Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

François Chiaruttini , Thierry Guillet , Christelle Brimont , Benoit Jouault , Pierre Lefebvre et al.
Nano Letters, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩
Article dans une revue hal-02272702 v1
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Terahertz intersubband absorption of GaN/ AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

A Jollivet , M Tchernycheva , V Trinité , E Frayssinet , P de Mierry et al.
Applied Physics Letters, 2019, 115 (26), pp.261103. ⟨10.1063/1.5129362⟩
Article dans une revue hal-03023702 v1
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High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

Filippo Giannazzo , Giuseppe Greco , Emanuela Schilirò , Raffaella Lo Nigro , Ioannis Deretzis et al.
ACS Applied Electronic Materials, 2019, 1 (11), pp.2342-2354. ⟨10.1021/acsaelm.9b00530⟩
Article dans une revue hal-02929061 v1

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Emanuela Schilirò , Filippo Giannazzo , Corrado Bongiorno , Salvatore Di Franco , Giuseppe Greco et al.
Materials Science in Semiconductor Processing, 2019, 97, pp.35-39. ⟨10.1016/j.mssp.2019.03.005⟩
Article dans une revue hal-02399341 v1

Kapitza thermal resistance characterization of epitaxial graphene–SiC(0001) interface

Georges Hamaoui , Roy Dagher , Yvon Cordier , Adrien Michon , Sylvain Potiron et al.
Applied Physics Letters, 2019, 114 (22), pp.221601. ⟨10.1063/1.5092207⟩
Article dans une revue hal-03108345 v1
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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Idriss Abid , Riad Kabouche , Catherine Bougerol , Julien Pernot , Cédric Masante et al.
Micromachines, 2019, 10 (10), pp.690. ⟨10.3390/mi10100690⟩
Article dans une revue hal-02344992 v1

Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

Yvon Cordier , Rémi Comyn , Olivier Tottereau , Eric Frayssinet , Marc Portail et al.
Journal of Crystal Growth, 2019, 507, pp.220-225. ⟨10.1016/j.jcrysgro.2018.11.029⟩
Article dans une revue hal-02399328 v1
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Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Yvon Cordier , Rémi Comyn , Éric Frayssinet , Mario Khoury , Marie Lesecq et al.
Physica Status Solidi A (applications and materials science), 2018, 215 (9), pp.1700637. ⟨10.1002/pssa.201700637⟩
Article dans une revue hal-03576045 v1
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Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

B. Damilano , Marie Lesecq , Di Zhou , Éric Frayssinet , Sebastien Chenot et al.
IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩
Article dans une revue hal-02304909 v1

A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

Roy Dagher , Elisabeth Blanquet , Christian Chatillon , Timotée Journot , Marc Portail et al.
CrystEngComm, 2018, 20 (26), pp.3702 - 3710. ⟨10.1039/c8ce00383a⟩
Article dans une revue hal-01871982 v1

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Tasnia Hossain , Mohammad Junaebur Rashid , Eric Frayssinet , Nicolas Baron , Benjamin Damilano et al.
physica status solidi (b), 2018, 255 (5), pp.1700399. ⟨10.1002/pssb.201700399⟩
Article dans une revue hal-01871066 v1

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

R. Dagher , S. Matta , Romain Parret , Matthieu Paillet , Benoit Jouault et al.
Physica Status Solidi A (applications and materials science), 2017, 214 (4), pp.1600436. ⟨10.1002/pssa.201600436⟩
Article dans une revue hal-01563258 v1

Recent improvements of flexible GaN-based HEMT technology

Sarra Mhedhbi , Marie Lesecq , Philippe Altuntas , N. Defrance , Yvon Cordier et al.
Physica Status Solidi A (applications and materials science), 2017, 214 (4), 1600484, 5 p. ⟨10.1002/pssa.201600484⟩
Article dans une revue hal-03270098 v1

Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin , Oscar Garcia-Perez , Susana Pérez , Philippe Altuntas , Virginie Hoel et al.
Semiconductor Science and Technology, 2017, 32 (3), 035011, 8 p. ⟨10.1088/1361-6641/aa5473⟩
Article dans une revue hal-03270095 v1

A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

Guillaume Gomme , Gaël Gautier , Marc Portail , Eric Frayssinet , Daniel Alquier et al.
Physica Status Solidi A (applications and materials science), 2017, 214 (4), pp.1600450. ⟨10.1002/pssa.201600450⟩
Article dans une revue hal-02152388 v1

CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut

Roy Dagher , Benoit Jouault , Matthieu Paillet , Maxime Bayle , Luan Nguyen et al.
Materials Science Forum, 2017, 897, pp.731 - 734. ⟨10.4028/www.scientific.net/MSF.897.731⟩
Article dans une revue hal-01643147 v1

Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating

H. Spisser , A. Grimault-Jacquin , N. Zerounian , A. Aassime , L. Cao et al.
Journal of Infrared, Millimeter and Terahertz Waves, 2016, 37 (3), pp.243 - 257. ⟨10.1007/s10762-015-0224-y⟩
Article dans une revue hal-01918143 v1

First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor

Sarra Mhedhbi , Marie Lesecq , Philippe Altuntas , N. Defrance , Etienne Okada et al.
IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
Article dans une revue hal-03270110 v1

Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes

Gema Tabares Jimenez , Sarra Mhedhbi , Marie Lesecq , Benjamin Damilano , Julien Brault et al.
IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
Article dans une revue hal-03270097 v1

Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

Rémi Comyn , Yvon Cordier , Sébastien Chenot , Abdelatif Jaouad , Hassan Maher et al.
Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.917 - 924. ⟨10.1002/pssa.201532732⟩
Article dans une revue istex hal-01918142 v1

Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate

Philippe Altuntas , François Lecourt , Adrien Cutivet , N. Defrance , Etienne Okada et al.
IEEE Electron Device Letters, 2015, 36 (4), pp.303-305. ⟨10.1109/LED.2015.2404358⟩
Article dans une revue hal-03276913 v1

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

A. Michon , Antoine Tiberj , S. Vezian , E. Roudon , D. Lefebvre et al.
Applied Physics Letters, 2014, 104 (7), pp.071912. ⟨10.1063/1.4866285⟩
Article dans une revue hal-01200742 v1

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier , Éric Frayssinet , Magdalena Chmielowska , Maud Nemoz , Aimeric Courville et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩
Article dans une revue istex hal-00966112 v1

Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

Achraf Ben Amar , Marc Faucher , Virginie Brandli , Yvon Cordier , Didier Theron
Physica Status Solidi A (applications and materials science), 2014, 211, pp.1655-1659. ⟨10.1002/pssa.201330339⟩
Article dans une revue istex hal-01044844 v1

Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder

Wilfried Desrat , Magdalena Chmielowska , Sebastien Chenot , Yvon Cordier , Benoit Jouault
European Physical Journal: Applied Physics, 2014, 68 (2), pp.20102. ⟨10.1051/epjap/2014140068⟩
Article dans une revue istex hal-01208531 v1

Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature

A. Penot , Jeremie Torres , P. Nouvel , Luca Varani , Frederic Teppe et al.
Lithuanian Journal of Physics, 2014, 54 (1), pp.58 - 62. ⟨10.3952/physics.v54i1.2848⟩
Article dans une revue hal-01636434 v1

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani , Y. Cordier , J.C. Gerbedoen , S. Joblot , Etienne Okada et al.
Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩
Article dans une revue hal-00872010 v1

Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate

T. Hossain , J. Wang , E. Frayssinet , S. Chenot , M. Leroux et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2013, 10 (3), pp.425 - 428. ⟨10.1002/pssc.201200556⟩
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Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz

A. Soltani , J.C. Gerbedoen , Y. Cordier , D. Ducatteau , Michel Rousseau et al.
IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩
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Terahertz transmission and effective gain measurement of two-dimensional electron gas

R. Sharma , T. Laurent , J. Torres , P. Nouvel , S. Blin et al.
Physica Status Solidi A (applications and materials science), 2013, 210 (7), pp.1454 - 1458. ⟨10.1002/pssa.201228869⟩
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Magnetotransport studies of AlGaN/GaN heterostructures with two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination

Wilfried Desrat , Sylvie Contreras , Leszek Konczewicz , Benoit Jouault , M. Chmielowska et al.
Journal of Applied Physics, 2013, 114 (2), pp.023704. ⟨10.1063/1.4813220⟩
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Role of magnetic polarons in ferromagnetic GdN

F. Natali , B.J. Ruch , H. J. Trodahl , Do Le Binh , S. Vézian et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87 (3), pp.035202. ⟨10.1103/PhysRevB.87.035202⟩
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Fabrication, characterization, and physical analysis of AlGaN/GaN HEMTs on flexible substrates

N. Defrance , F. Lecourt , Y. Douvry , Marie Lesecq , Virginie Hoel et al.
IEEE Transactions on Electron Devices, 2013, 60, pp.1054-1059. ⟨10.1109/TED.2013.2238943⟩
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Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

S. Rennesson , F. Lecourt , N. Defrance , M. Chmielowska , Sébastien Chenot et al.
IEEE Transactions on Electron Devices, 2013, 60, pp.3105-3111. ⟨10.1109/TED.2013.2272334⟩
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Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons

Riccardo Messina , Jean-Paul Hugonin , Jean-Jacques Greffet , François Marquier , Yannick de Wilde et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87 (8), pp.085421. ⟨10.1103/PhysRevB.87.085421⟩
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Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

Marc Portail , A. Michon , S. Vézian , D. Lefebvre , S. Chenot et al.
Journal of Crystal Growth, 2012, 349 (1), pp.27-35. ⟨10.1016/j.jcrysgro.2012.04.004⟩
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Bias dependence of gallium nitride micro-electro-mechanical systems actuation using a two-dimensional electron gas

A. Ben Amar , M. Faucher , B. Grimbert , Y. Cordier , M. François et al.
Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5, pp.067201-1-3. ⟨10.1143/APEX.5.067201⟩
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Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

Elias Al Alam , Ignasi Cortés , T. Begou , Antoine Goullet , Frédéric Morancho et al.
Materials Science Forum, 2012, 711, pp.228-232. ⟨10.4028/www.scientific.net/MSF.711.228⟩
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Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

David Schenk , Alexis Bavard , Eric Frayssinet , Xi Song , Frédéric Cayrel et al.
Applied Physics Express, 2012, 5 (2), pp.025504. ⟨10.1143/APEX.5.025504⟩
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Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

M. Mattalah , A. Soltani , J.C. Gerbedoen , A. Ahaitouf , N. Defrance et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2012, 9, pp.1083-1087. ⟨10.1002/pssc.201100211⟩
Article dans une revue istex hal-00790433 v1

Electromechanical transconductance properties of a GaN MEMS resonator with fully integrated HEMT transducers

M. Faucher , Y. Cordier , M. Werquin , L. Buchaillot , Christophe Gaquière et al.
Journal of Microelectromechanical Systems, 2012, 21, pp.370-378. ⟨10.1109/JMEMS.2011.2179010⟩
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Effect of surface preparation and interfacial layer on the quality of SiO(2)/GaN interfaces

Elias Al Alam , I. Cortes , Marie-Paule Besland , Antoine Goullet , L. Lajaunie et al.
Journal of Applied Physics, 2011, 109 (8), pp.084511. ⟨10.1063/1.3572236⟩
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Voltage controlled terahertz transmission enhancement through GaN quantum wells

T. Laurent , R. Sharma , J. Torres , P. Nouvel , S. Blin et al.
Acta Physica Polonica A, 2011, 119 (2), pp.107--110. ⟨10.12693/APhysPolA.119.107⟩
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Growth of GaN based structures on focused ion beam patterned GaN

Yvon Cordier , Olivier Tottereau , Lee Nguyen , Mohammed Réda Ramdani , Ali Soltani et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (5), pp.1516-1519. ⟨10.1002/pssc.201000882⟩
Article dans une revue istex hal-00603099 v1
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Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K

T. Laurent , R. Sharma , J. Torres , P. Nouvel , S. Blin et al.
Acta Physica Polonica A, 2011, 119 (2), pp.196 - 198. ⟨10.12693/APhysPolA.119.196⟩
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Voltage controlled terahertz transmission through GaN quantum wells

T. Laurent , R. Sharma , J. Torres , P. Nouvel , S. Blin et al.
Applied Physics Letters, 2011, 99 (8), pp.082101. ⟨10.1063/1.3627183⟩
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AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen , A. Soltani , S. Joblot , Jean-Claude de Jaeger , Christophe Gaquière et al.
IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩
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Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells

T. Laurent , P. Nouvel , J. Torres , Laurent Chusseau , C. Palermo et al.
Journal of Physics: Conference Series, 2009, 193, pp.012094. ⟨10.1088/1742-6596/193/1/012094⟩
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Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Y. Cordier , A. Lecotonnec , Sébastien Chenot , N. Baron , F. Nacer et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6 (2), pp.1016. ⟨10.1002/pssc.200880870⟩
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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

L. Bouguen , L. Konczewicz , S. Contreras , Benoit Jouault , J. Camassel et al.
Materials Science and Engineering: B, 2009, 165 (1-2), pp.1-4. ⟨10.1016/j.mseb.2008.11.041⟩
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Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron , M. Leroux , N. Zeggaoui , P. Corfdir , F. Semond et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S715-S718. ⟨10.1002/pssc.200880828⟩
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Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier , Fabrice Semond , Jean-Christophe Moreno , Éric Frayssinet , Brahim Benbakhti et al.
Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩
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Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

M. Faucher , B. Grimbert , Y. Cordier , N. Baron , A. Wilk et al.
Applied Physics Letters, 2009, 94, pp.233506-1-3. ⟨10.1063/1.3153504⟩
Article dans une revue hal-00472724 v1

Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Yvon Cordier , Aude Le Cotonnec , Sébastien Chenot , Nicolas Baron , Nacer Farih et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6 (S2), pp.S1016-S1019. ⟨10.1002/pssc.200880870⟩
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Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier , M. Azize , N. Baron , Z. Bougrioua , Sébastien Chenot et al.
Journal of Crystal Growth, 2008, 310, pp.948-954. ⟨10.1016/j.jcrysgro.2007.11.161⟩
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Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C

Laure Bouguen , Sylvie Contreras , Benoit Jouault , Leszek Konczewicz , Jean Camassel et al.
Applied Physics Letters, 2008, 92, pp.043504. ⟨10.1063/1.2838301⟩
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Thickness and substrate effects on AlN thin film growth at room temperature

B. Abdallah , C. Duquenne , Marie-Paule Besland , E. Gautron , Pierre-Yves Jouan et al.
European Physical Journal: Applied Physics, 2008, 43 (3), pp.309. ⟨10.1051/epjap:2008082⟩
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Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani , A. Ben Moussa , S. Touati , Virginie Hoel , Jean-Claude de Jaeger et al.
Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩
Article dans une revue istex hal-00267124 v1

AlGaN/GaN HEMTs on a (001)-oriented silicon substrate based on 100-nm SiN recessed gate technology for microwave power amplification

S. Boulay , S. Touati , A. Sar , Virginie Hoel , Christophe Gaquière et al.
IEEE Transactions on Electron Devices, 2007, 54, pp.2843-2848. ⟨10.1109/TED.2007.907189⟩
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Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani , A. Benmoussa , S. Touati , Virginie Hoel , Jean-Claude de Jaeger et al.
Diamond and Related Materials, 2007, 16 (2), pp.262. ⟨10.1016/j.diamond.2006.06.022⟩
Article dans une revue istex hal-00391939 v1

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier , P. Lorenzini , M. Hugues , F. Semond , F. Natali et al.
Journal de Physique IV Proceedings, 2006, 132, pp.365-368. ⟨10.1051/jp4:2006132070⟩
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High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin , Damien Ducatteau , Nicolas Vellas , E. Delos , Yvon Cordier et al.
Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩
Article dans une revue istex hal-00154928 v1

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Y. Cordier , M. Hugues , F. Semond , F. Natali , P. Lorenzini et al.
Journal of Crystal Growth, 2005, 278 (1-4), pp.383-386. ⟨10.1016/j.jcrysgro.2005.01.037⟩
Article dans une revue istex hal-02906611 v1

High microwave and noise performance of 0.17µm AlGaN/GaN HEMTs on high-resistivity silicon substrates

A. Minko , Virginie Hoel , Sylvie Lepilliet , Gilles Dambrine , Jean-Claude de Jaeger et al.
IEEE Electron Device Letters, 2004, 25, pp.167-169
Article dans une revue hal-00141951 v1

Electronic properties of deep defects in n-type GaN

P. Muret , C. Ulzhöfer , J. Pernot , Y. Cordier , F. Semond et al.
Superlattices and Microstructures, 2004, 36, pp.435-443
Article dans une revue hal-00141959 v1

60-GHz high power performance In0.32 Al0.68 As-In0.33 Ga 0.67 As metamorphic HEMTs on GaAs

M. Zaknoune , M. Ardouin , Y. Cordier , S. Bollaert , B. Bonte et al.
IEEE Electron Device Letters, 2003, 24, pp.724-726
Article dans une revue hal-00146648 v1

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier , P. Lorenzini , Jean Michel Chauveau , D. Ferré , Ydir Androussi et al.
Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩
Article dans une revue istex hal-00018494 v1

MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances

Y. Cordier , F. Semond , P. Lorenzini , N. Grandjean , F. Natali et al.
Journal of Crystal Growth, 2003, 251, pp.811-815
Article dans une revue hal-00146661 v1

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate

N. Vellas , Christophe Gaquière , A. Minko , Virginie Hoel , Jean-Claude de Jaeger et al.
IEEE Microwave and Wireless Components Letters, 2003, 13, pp.255-257
Article dans une revue hal-00146662 v1

High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures

C Consejo , L Konczewicz , S Contreras , Benoit Jouault , S Lepkowsky et al.
physica status solidi (b), 2003, 235 (2), pp.232-237. ⟨10.1002/pssb.200301562⟩
Article dans une revue istex hal-03037546 v1

High-power AlGaN/GaN HEMTs on resistive silicon substrate

Virginie Hoel , N. Vellas , Christophe Gaquière , Jean-Claude de Jaeger , Y. Cordier et al.
Electronics Letters, 2002, 38, pp.750-752
Article dans une revue hal-00149694 v1

fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate

S. Bollaert , Y. Cordier , M. Zaknoune , T. Parenty , H. Happy et al.
Electronics Letters, 2002, 38, pp.389-391
Article dans une revue hal-00147831 v1

Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement

Mustafa Boudrissa , Elisabet Delos , Christophe Gaquière , Michel Rousseau , Yvon Cordier et al.
IEEE Transactions on Electron Devices, 2001, 48 (6), pp.1037-1044. ⟨10.1109/16.925223⟩
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HEMTs capability for millimeter wave applications

S. Bollaert , Y. Cordier , M. Zaknoune , T. Parenty , H. Happy et al.
Annals of Telecommunications - annales des télécommunications, 2001, 56, pp.15-26
Article dans une revue hal-00151764 v1

Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps

Y. Cordier , D. Ferre , J.M. Chauveau , J. Dipersio
Applied Surface Science, 2000, 166, pp.442-445
Article dans une revue hal-00158436 v1

The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter

S. Bollaert , Y. Cordier , M. Zaknoune , H. Happy , Virginie Hoel et al.
Solid-State Electronics, 2000, 44, pp.1021-1027
Article dans une revue hal-00157879 v1

Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers

Y. Cordier , J.M. Chauveau , D. Ferre , J. Dipersio
Journal of Vacuum Science and Technology, 2000, 18, pp.2513-2517
Article dans une revue hal-00158227 v1

0,1-µm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

M. Zaknoune , Y. Cordier , S. Bollaert , D. Ferre , D. Theron et al.
Solid-State Electronics, 2000, 44 (9), pp.1685-1688. ⟨10.1016/S0038-1101(00)00060-5⟩
Article dans une revue istex hal-00158982 v1

Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage

Mustafa Boudrissa , Elisabet Delos , Yvon Cordier , Didier Theron , Jean-Claude de Jaeger
IEEE Electron Device Letters, 2000, 21 (11), pp.512-514. ⟨10.1109/55.877193⟩
Article dans une revue hal-00158983 v1

A Comparison Study of Substrates Quality for GaN Vertical Devices

Pedro Fernandes Paes Pinto Rocha , Kevin Nadaud , Giuseppe Greco , Taoufik Slimani Tlemcani , Michal Bockowski et al.
International GaN4AP Workshop : GaN for Advanced Power Applications, Feb 2025, Catane, Italy
Communication dans un congrès hal-04988232 v1

ADICT: Growth of MoS2 Using Molecular Beam Epitaxy

Z Bouyid , M.-T. Dau , I Florea , P Vennéguès , J Brault et al.
Journées scientifiques du PEPR électronique, Mar 2025, Paris, France
Communication dans un congrès hal-04947519 v1
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Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterization

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Adrien Bidaud , Mohammed El Amrani , Thibaud Guillemin et al.
ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden
Communication dans un congrès hal-05097968 v1
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Physical and electrical characterization of wide band gap for power electronic application

Camille Sonneville , Enora Vuillermet , Ndembi Ignoumba-Ignoumba , Maroun Dagher , Nhan Tran et al.
Société Française de Physique, Jun 2025, Troyes, France
Communication dans un congrès hal-05097944 v1
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Evaluation of Self-Heating Effects in AlGaN Channel Heterostructure field-effect Transistors grown on bulk AlN substrate

Jash Mehta , Yannick Guhel , Julien Bassaler , Yvon Cordier , Philippe Ferrandis et al.
European Materials Research Society (EMRS) Fall 2024, Sep 2024, Varsovie, Poland
Communication dans un congrès hal-04761108 v1
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Evaluation of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy

Caroline Elias , Sébastien Chenot , Florian Bartoli , Philippe Vennéguès , Maxime Hugues et al.
GaN Marathon, Univ. Padova, Jun 2024, Verone, Italy
Communication dans un congrès hal-04793343 v1
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Carrier density analysis in stressed n-doped GaN layers on sapphire

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Éric Frayssinet , Adrien Bidaud , Florian Bartoli et al.
GaN Marathon, Jun 2024, Vérone, Italy
Communication dans un congrès hal-04639487 v1
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Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy

Caroline Elias , Sebastien Chenot , Florian Bartoli , Seif El-Whibi , Jean-Claude de Jaeger et al.
Wocsdice - Exmatec 2023 Conference, May 2023, Palermo, Italy
Communication dans un congrès hal-04444068 v1
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Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off

Daniel Rouly , Josiane Tasselli , Patrick Austin , Yvon Cordier , Aimeric Courville et al.
Symposium de génie électrique SGE 2023, Université de Lille, Jul 2023, Lille, France
Communication dans un congrès hal-04127127 v1
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Multiphysics Characterizations of Vertical GaN Schottky Diodes

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry et al.
2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩
Communication dans un congrès hal-03844585 v1

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

Rémi Aristegui , François Chiaruttini , Benoit Jouault , Christelle Brimont , Thierry Guillet et al.
International Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany
Communication dans un congrès hal-04874254 v1

Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template

Julien Bassaler , Rémi Comyn , C. Bougerol , Yvon Cordier , F Medjdoub et al.
WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
Communication dans un congrès hal-03681788 v1
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AlGaN channel high electron mobility transistors on bulk AlN substrate

Jash Mehta , Idriss Abid , Reda Elwaradi , Yvon Cordier , F Medjdoub
International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany
Communication dans un congrès hal-03829060 v1
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Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications

Marie Lesecq , Éric Frayssinet , Marc Portail , Micka Bah , Nicolas Defrance et al.
International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany
Communication dans un congrès hal-04037282 v1

[Invited] AlGaN Channel HEMTs for High Voltage Applications

F Medjdoub , Jash Mehta , Idriss Abid , Yvon Cordier , Fabrice Semond
MRS Spring Meeting & Exhibit, MRS 2022 spring meeting, May 2022, Honolulu (Online), United States
Communication dans un congrès hal-03637419 v1

Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate

Reda Elwaradi , C. Bougerol , Jash Mehta , Maud Nemoz , F Medjdoub et al.
WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
Communication dans un congrès hal-03681811 v1
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Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky

Camille Sonneville , Atse Julien Eric N’dohi , S Saidi , T H Ngo , P. de Mierry et al.
Conférence Internationale Matériaux, Oct 2022, Lille, France
Communication dans un congrès hal-03844887 v1

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq , Y. Fouzi , A. Abboud , N. Defrance , Francois Vaurette et al.
European Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland
Communication dans un congrès hal-04039596 v1
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Electrical behavior of vertical Schottky diodes on GaN homoepitaxy

M Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Yvon Cordier et al.
IWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany
Communication dans un congrès hal-03854620 v1
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Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate

Jash Mehta , Idriss Abid , Julien Bassaler , Julien Pernot , Philippe Ferrandis et al.
Compound Semiconductor Week, CSW 2022, Jun 2022, Ann Arbor MI, United States. 2 p
Communication dans un congrès hal-03828829 v1

Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications

Atse Julien Eric N’dohi , Camille Sonneville , Thi Huong Ngo , P. de Mierry , Éric Frayssinet et al.
EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom
Communication dans un congrès hal-03676503 v1

GaN-based HEMTs operating as zero-bias microwave detectors at low temperature

G. Paz , I. Iniguez de La Torre , H. Sanchez , Virginie Hoel , Y. Cordier et al.
13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Seville, Spain
Communication dans un congrès hal-03340956 v1

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

F. Albany , A. Curutchet , N. Labat , F. Lecourt , E. Walasiak et al.
15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362
Communication dans un congrès hal-03362260 v1

MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry et al.
POWER 2021 (IMAPS), Nov 2021, Tours, France
Communication dans un congrès hal-03676940 v1
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Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy

Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros et al.
Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
Communication dans un congrès hal-03284079 v1
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Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes

Quentin Fornasiero , N. Defrance , Marie Lesecq , Eric Frayssinet , Yvon Cordier et al.
Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.50-52
Communication dans un congrès hal-03275589 v1
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GaN schottky diode on silicon substrate for high power THz multiplier

Giuseppe Di Gioia , M Samnouni , H Bouillaud , P Mondal , J Treuttel et al.
WOCSDICE 2021, Jun 2021, Bristol, United Kingdom
Communication dans un congrès hal-03384345 v1
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AlGaN/GaN HEMTs on AlN substrate for power electronics

Jash Mehta , Idriss Abid , Thi Huong Ngo , Yvon Cordier , F Medjdoub
44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom
Communication dans un congrès hal-03279160 v1

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marie Lesecq , E. Frayssinet , Marc Portail , M Bah , N. Defrance et al.
13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020), Oct 2021, Tours, France
Communication dans un congrès hal-04038119 v1
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Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs

Chaymaa Haloui , Toulon Gaëtan , Josiane Tasselli , Yvon Cordier , Éric Frayssinet et al.
28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland
Communication dans un congrès hal-02922723 v1
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Développement technologique d'un HEMT normally- off avec une grille à barrière P-GaN

Chaymaa Haloui , Gaëtan Toulon , Josiane Tasselli , Yvon Cordier , Éric Frayssinet et al.
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France
Communication dans un congrès hal-02918372 v2

Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate

M.R. Irekti , Marie Lesecq , N. Defrance , M. Boucherta , Eric Frayssinet et al.
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès hal-04039402 v1

Controlled and thermalized indirect exciton fluids in a GaN/AlGaN quantum well with electrostatic traps

Thierry Guillet , François Chiaruttini , Christelle Brimont , Benoit Jouault , Pierre Lefebvre et al.
20th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Jul 2019, Suzdal, Russia
Communication dans un congrès hal-04874180 v1

Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Benoit Jouault et al.
13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Communication dans un congrès hal-02466858 v1
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AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer

Idriss Abid , Riad Kabouche , Malek Zegaoui , C. Bougerol , Rémi Comyn et al.
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès hal-02356886 v1

Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures

Maria Vladimirova , François Chiaruttini , Thierry Guillet , Christelle Brimont , Pierre Lefebvre et al.
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès hal-02466887 v1

MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet , Luan Nguyen , Marie Lesecq , N. Defrance , Maxime Garcia Barros et al.
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès hal-04038786 v1

[Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors

E. Frayssinet , L. Nguyen , Marie Lesecq , N. Defrance , R. Comyn et al.
13th International Conference on Nitride Semiconductors (ICNS 2019), Jul 2019, Washington, Seattle, United States
Communication dans un congrès hal-04039430 v1

Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates

Idriss Abid , Riad Kabouche , Malek Zegaoui , C. Bougerol , Rémi Comyn et al.
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle WA, United States
Communication dans un congrès hal-03287398 v1

Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits

N. Defrance , Etienne Okada , Florent Albany , Nathalie Labat , Nathalie Malbert et al.
WOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès hal-02502499 v1
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GaN Schottky Diode for High Power THz Generation using Multiplier Principle

Giuseppe Di Gioia , V K Chinni , Malek Zegaoui , Y Cordier , A Maestrini et al.
Proc. 43rd Workshop Compound Semiconductor Devices Integr. Circuits (WOCSDICE), Jun 2019, Cabourg, France
Communication dans un congrès hal-03384353 v1

Analysis of microwave detection with GaN HEMTs under RF probes

Hector Sanchez-Martin , Ester Pérez-Martín , Philippe Altuntas , Virginie Hoel , Stéphane Rennesson et al.
Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2018, May 2018, Bucharest, Romania
Communication dans un congrès hal-03340979 v1

Phase transition of indirect excitons in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès hal-01910225 v1

[Invited] Nouvelles voies technologiques pour la mesure de la température et l’amélioration de la dissipation thermique des HEMTs GaN

M. Lesecq , Flavien Cozette , Mahmoud ABOU DAHER , Mohamed-Reda Irekti , M. Boucherta et al.
RF & Microwave 2018, 7ème Salon Radiofréquences, Hyperfréquences, Wireless, CEM et Fibre Optique, Mar 2018, Paris, France
Communication dans un congrès hal-04441664 v1

Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.

François Chiaruttini , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès hal-01907806 v1
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Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée

Audrey Chapelle , Éric Frayssinet , Yvon Cordier , Yohann Spiegel , Leïla Benmosfeta et al.
Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
Communication dans un congrès hal-02981903 v2

Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.

Thierry Guillet , François Chiaruttini , Christelle Brimont , Thierry Bretagnon , Laetitia Doyennette et al.
TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
Communication dans un congrès hal-01908823 v1

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin , Oscar Garcia-Perez , Ignacio Íñiguez-De-La-Torre , Susana Perez , Tomás González et al.
11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩
Communication dans un congrès hal-03270103 v1

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Philippe Altuntas , N. Defrance , Marie Lesecq , Alain Agboton , Rezki Ouhachi et al.
9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩
Communication dans un congrès hal-03276914 v1

Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz

Stéphanie Rennesson , François Lecourt , N. Defrance , M. Chmielowska , S. Chenot et al.
Joint 5th International Workshop on Silicon Carbide Hetero-Epitaxy and 5th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC-WASMPE 2013, 2013, Nice, France
Communication dans un congrès hal-00987957 v1

AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD

Philippe Altuntas , N. Defrance , Marie Lesecq , Adrien Cutivet , Alain Agboton et al.
22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. paper 5.6, 2 p
Communication dans un congrès hal-00877773 v1

[Invité] Etat de l'art et défis du GaN pour l'électronique

Raphaël Aubry , Yvon Cordier , Jean-Claude de Jaeger , Nicolas Grandjean , M. Rocchi et al.
14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, Table ronde, 2013, Evian, France
Communication dans un congrès hal-00878877 v1

Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz

Stéphanie Rennesson , M. Chmielowska , S. Chenot , Yvon Cordier , François Lecourt et al.
10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States
Communication dans un congrès hal-00987956 v1

STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)

François Lecourt , Yannick Douvry , Marie Lesecq , N. Defrance , Alain Agboton et al.
Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France
Communication dans un congrès hal-00941541 v1

Experiments and theory of terahertz transmission through multi-layer semiconductor structures

A. Penot , J. Torres , T. Laurent , R. Sharma , P. Nouvel et al.
18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 2013, Matsue, Japan
Communication dans un congrès hal-02454457 v1

Room temperature generation of THz radiation in GaN quantum wells structures

A. Penot , J. Torres , P. Nouvel , L. Varani , F. Teppe et al.
SPIE Photonic West, 2013, San Francisco, United States. pp.34-40, ⟨10.1117/12.2002504⟩
Communication dans un congrès hal-01926284 v1

Epitaxial growth of AlN thin films at low temperature by magnetron sputtering technique

Julien Camus , Quentin Simon , Keltouma Aït Aïssa , Salma Bensalem , Laurent Le Brizoual et al.
European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J - Semiconductor nanostructures towards electronic and optoelectronic device applications IV, 2013, Strasbourg, France
Communication dans un congrès hal-00878878 v1

Graphene based near-field thermophotovoltaic conversion system (Orale)

Ali Belarouci , Adrien Michon , Yvon Cordier , Yannick de Wilde , Riccardo Messina et al.
Cmos energy technologies research, Jul 2013, Whistler, Canada
Communication dans un congrès hal-00818643 v1

AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides

Adrien Cutivet , Alain Agboton , Philippe Altuntas , François Lecourt , Marie Lesecq et al.
37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.37-38
Communication dans un congrès hal-00828412 v1

THz emission from 2DEG GaN device

A. Penot , J. Torres , P. Nouvel , L. Varani , F. Teppe et al.
18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 2013, Matsue, Japan
Communication dans un congrès hal-02454369 v1

AlGaN/GaN heterostructures with very-thin buffer on Si (111) for NEMS applications : electrical and mechanical study

P. Leclaire , Y. Cordier , Sébastien Chenot , D. Theron , M. Faucher
22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. 2 p
Communication dans un congrès hal-00877763 v1

GaN MEMS resonators : from demonstration to microsystem-compatible performances

Marc Faucher , Achraf Ben Amar , Victor Y. Zhang , Yvon Cordier , Matthieu Werquin et al.
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-4
Communication dans un congrès hal-00801104 v1

Résonateurs MEMS en nitrure de gallium

Marc Faucher , Didier Theron , Yvon Cordier , Fabrice Semond , Achraf Ben Amar et al.
Journées Nationales du GDR Micro Nano Systèmes-Micro Nano Fluidique, 2012, Bordeaux, France
Communication dans un congrès hal-00797721 v1

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

A. Michon , E. Roudon , M. Portail , Benoit Jouault , S. Contreras et al.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩
Communication dans un congrès hal-03037521 v1

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt , N. Defrance , S. Rennesson , Virginie Hoel , Y. Cordier et al.
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2
Communication dans un congrès hal-00801154 v1

High transconductance on AlGaN/GaN HEMT on (110) silicon substrate

J.C. Gerbedoen , A. Soltani , Y. Cordier , Jean-Claude de Jaeger
7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.413-416
Communication dans un congrès hal-00814978 v1

THz transmission modulated by a dc-bias through GaN quantum well structure

A. Penot , J. Torres , T. Laurent , R. Sharma , P. Nouvel et al.
TERAHERTZ TECHNOLOGY AND APPLICATIONS V, Jan 2012, San Francisco, United States. pp.826111, ⟨10.1117/12.905958⟩
Communication dans un congrès hal-00814152 v1

[Invited] AlGaN/GaN and InAlN/GaN HEMTs technology for high frequency wireless communication and applications needing conformability

Jean-Claude de Jaeger , Virginie Hoel , Marie Lesecq , N. Defrance , F. Lecourt et al.
European Microwave Week, EuMIC, Workshop W09 - Wideband GaN devices and applications, 2011, Manchester, United Kingdom
Communication dans un congrès hal-00807597 v1

Voltage Control of Terahertz Transmission Through GaN Quantum Wells: Experiments and Theory

T. Laurent , R. Sharma , A. Penot , J. Torres , P. Nouvel et al.
17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra and Stephen M. Goodnick, 2011, Santa Barbara, United States
Communication dans un congrès hal-02455707 v1

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Marc Faucher , Yvon Cordier , Fabrice Semond , Virginie Brandli , Bertrand Grimbert et al.
24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩
Communication dans un congrès hal-00579046 v1

High RF performance of AlGaN/GaN HEMT on (110)-oriented silicon substrate

J.C. Gerbedoen , A. Soltani , Y. Cordier , Jean-Claude de Jaeger
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2
Communication dans un congrès hal-00800113 v1

Voltage-controlled sub-THz radiation transmission through GaN heterostructures

R. Sharma , T. Laurent , A. Penot , J. Torres , P. Nouvel et al.
20th European Heterostructure Technology meeting (HeTech), 2011, Lille, France
Communication dans un congrès hal-02455809 v1

[Invité] Micro et nanorésonateurs électromécaniques radio-fréquences. Principes et applications

Marc Faucher , Bernard Legrand , Benjamin Walter , Emmanuelle Algre , A. Ben-Amar et al.
TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, papier 554, 1-6
Communication dans un congrès hal-00806730 v1

AlGaN/GaN HEMTs reported on flexible substrate

N. Defrance , Marie Lesecq , F. Lecourt , Virginie Hoel , Jean-Claude de Jaeger et al.
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2
Communication dans un congrès hal-00800114 v1

Caractérisation électrique et hyperfréquence d'épitaxie AlGaN/GaN sur substrat résistif Si(111)

F. Lecourt , Y. Douvry , N. Defrance , Virginie Hoel , Y. Cordier et al.
13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, 2010, France. pp.CD-ROM, Session Matériaux 2, 1-4
Communication dans un congrès hal-00573207 v1

Analysis of AlGaN/GaN epi-material on resistive Si(111) substrate for MMIC applications in millimeter wave range

F. Lecourt , Y. Douvry , N. Defrance , Virginie Hoel , Y. Cordier et al.
5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.33-36
Communication dans un congrès hal-00549995 v1

Experimental investigation of THz transmission in GaN two-dimensional electron gas

T. Laurent , R. Sharma , J. Torres , P. Nouvel , S. Blin et al.
14th International Symposium on Ultrafast Phenomena in Semiconductors, 2010, Vilnius, Lithuania
Communication dans un congrès hal-01904173 v1

AlGaN/GaN HEMTs reported on flexible polyimide substrate

Marie Lesecq , Virginie Hoel , A. Lecavelier , E. Pichonat , Jean-Claude de Jaeger et al.
5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.9-12
Communication dans un congrès hal-00549997 v1

Enhanced terahertz transmission of GaN quantum wells

T. Laurent , R. Sharma , J. Torres , P. Nouvel , S. Blin et al.
35th International Conference on Infrared, Millimeter and THz Waves, 2010, Rome, Italy
Communication dans un congrès hal-01904170 v1

Resonant HEMT transducers and integrated MEMS resonators based on AlGaN/GaN/Si heterostructures

Marc Faucher , Bertrand Grimbert , Virginie Brandli , Yvon Cordier , Matthieu Werquin et al.
Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010, 2010, Newport Beach, CA, United States
Communication dans un congrès hal-00808202 v1

High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

Laure Bouguen , Leszek Konczewicz , Sylvie Contreras , Benoit Jouault , Jean Camassel et al.
9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.1-4
Communication dans un congrès hal-00536293 v1

Regrowth of GaN quantum wells on GaN substrates for TeraHertz generation by amplification of transverse electromagnetic waves

M. Chmielowska , S. Chenot , Y. Cordier , T. Laurent , P. Nouvel et al.
18th European Heterostructure Technology Workshop – HETECH, 2009, Günzburg / Ulm, Germany
Communication dans un congrès hal-02455804 v1

Analysis of the C-V characteristic in SiO2/GaN MOS capacitors

I. Cortes , E. Al-Alam , Marie-Paule Besland , P. Regreny , Frédéric Morancho et al.
7th Spanish Conference on Electron Devices, Feb 2009, Santiago de Compostela, Spain. pp.254
Communication dans un congrès hal-00475900 v1

Amplification of nanoscale motion by piezoelectric transduction in GaN resonators

M. Faucher , B. Grimbert , Y. Cordier , N. Baron , A. Wilk et al.
18th European Workshop on Heterostructure Technology, HeTech 2009, 2009, Günzburg-Ulm, Germany
Communication dans un congrès hal-00810577 v1

Performance of unstuck gamma gate AlGaN/GaN HEMTs on (001) silicon substrate at 10 GHz

J. Gerbedoen , A. Soltani , N. Defrance , Michel Rousseau , Christophe Gaquière et al.
3rd European Microwave Integrated Circuits Conference, EuMIC 2008, 2008, Netherlands. pp.330-333, ⟨10.1109/EMICC.2008.4772296⟩
Communication dans un congrès hal-00362379 v1

Passivation de matériaux et composants III-V par plasma ECR d'azote

Nacer Farih , Marie-Paule Besland , Antoine Goullet , Mario El Kazzi , Philippe Regreny et al.
JNMO'08 : 12èmes Journées Nano Micro et Optoélectronique, Jun 2008, Saint-Pierre-d'Oléron, France
Communication dans un congrès hal-00288425 v1
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Le Nitrure de Gallium : un Matériau d'Avenir pour la Conception de Composants de Puissance Haute Tension et Haute Température

Elias Al Alam , Alain Cazarré , Frédéric Morancho , Karine Isoird , Yvon Cordier
MGE 2008 4ème Colloque Matériaux du Génie Electrique, May 2008, TOULOUSE, France. 4 p
Communication dans un congrès hal-01002191 v1

Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Yvon Cordier , Aude Le Cotonnec , Sébastien Chenot , Nicolas Baron , Nacer Farih et al.
International Workshop on Nitride Semiconductors, Oct 2008, Montreux, Switzerland
Communication dans un congrès hal-00540445 v1

Pressure characterization of AlGaN/GaN Hall sensors

Leszek Konczewicz , Sylvie Contreras , L. Bouguen , Benoit Jouault , Jean Camassel et al.
13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil
Communication dans un congrès hal-00401344 v1

Terahertz generation in GaN quantum wells by amplification of transverse electromagnetic waves

T. Laurent , G. Sabatini , P. Nouvel , J. Torres , C. Palermo et al.
European Workshop on Heterostructure Technology, 2008, Venice, Italy. pp.85--86
Communication dans un congrès hal-01904189 v1

High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular beam epitaxy for microwave applications

S. Joblot , Y. Cordier , F. Semond , P. Vennegues , Sébastien Chenot et al.
Materials Research Society Spring Meeting, MRS Spring 2008, Symposium C : Advances in GaN, GaAs, SiC, and Related Alloys on Silicon Substrates, 2008, San Francisco, CA, United States
Communication dans un congrès hal-00362029 v1

Réalisation de grille nitrure de longueur inférieure à 100nm pour des applications haute fréquence de HEMTs AlGaN/GaN

S. Boulay , Virginie Hoel , S. Touati , E. Delos , Christophe Gaquière et al.
15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C1-1-4
Communication dans un congrès hal-00370327 v1

Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence

L. Bouguen , Sylvie Contreras , Benoit Jouault , L. Konczewicz , Y. Cordier et al.
Proceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France
Communication dans un congrès hal-00394196 v1

Conception et réalisation de transistors de type FP-HEMT AlGaN/GaN

J.C. Gerbedoen , A. Soltani , Michel Rousseau , N. Defrance , Y. Cordier et al.
15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D10-1-4
Communication dans un congrès hal-00370331 v1

AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication

S. Boulay , S. Touati , A. Sar , Virginie Hoel , Christophe Gaquière et al.
2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.96-99, ⟨10.1109/EMICC.2007.4412656⟩
Communication dans un congrès hal-00284403 v1

High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications

Christophe Consejo , Sylvie Contreras , Leszek Konczewicz , P. Lorenzini , Y. Cordier et al.
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1438-1443
Communication dans un congrès hal-00543735 v1

MicroRaman analysis of resistance ohmic contact to n-AlGaN/GaN

A. Soltani , S. Touati , Virginie Hoel , Jean-Claude de Jaeger , J. Laureyns et al.
Proceedings of the 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Diamond 2005, 2005, Toulouse, France
Communication dans un congrès hal-00131350 v1

Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates : application to X-band low noise amplifiers

Jean-Claude de Jaeger , S.L. Delage , Gilles Dambrine , M.A. Poisson , Virginie Hoel et al.
2005, pp.229-232
Communication dans un congrès hal-00126458 v1

Low frequency noise behaviour in GaN HEMT's on silicon substrate

Laurent Bary , E. Angeli , Abdelali Rennane , Geoffroy Soubercaze-Pun , Jean-Guy Tartarin et al.
2004, pp.286-295
Communication dans un congrès hal-00141967 v1

Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivité

M. Werquin , D. Ducatteau , N. Vellas , D. Jambon , D. Theron et al.
GDR Grand Gap, 2004, Fréjus, France
Communication dans un congrès hal-00141965 v1

Microwave performances of gallium nitride based HEMT's devices

Christophe Gaquière , N. Vellas , M. Werquin , D. Ducatteau , E. Delos et al.
European Microwave Week, 2004, Amsterdam, Netherlands
Communication dans un congrès hal-00141962 v1

RF noise and power performances of AlGaN/GaN on Si(111) substrates

A. Minko , Virginie Hoel , Gilles Dambrine , Christophe Gaquière , Jean-Claude de Jaeger et al.
2004, pp.67-70
Communication dans un congrès hal-00142303 v1

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet , Raphaël Aubry , H. Gerard , E. Delos , Nathalie Rolland et al.
12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238
Communication dans un congrès hal-00142308 v1

Amélioration des performances des HEMTs AlGaN/GaN sur substrat Si

A. Minko , Virginie Hoel , Christophe Gaquière , D. Theron , Jean-Claude de Jaeger et al.
GDR Grand Gap, 2004, Fréjus, France
Communication dans un congrès hal-00141966 v1

Optimisation des performances du transistor HEMT AlGaN/GaN sur substrat Si

A. Minko , Virginie Hoel , D. Theron , Jean-Claude de Jaeger , Y. Cordier et al.
GDR Grand Gap, 2003, Nice, France
Communication dans un congrès hal-00146717 v1

Management thermique des transistors HEMT AlGaN/GaN

Raphaël Aubry , N. Caillas , C. Dua , H. Gerard , B. Dessertene et al.
GDR Grand Gap, 2003, Nice, France
Communication dans un congrès hal-00146694 v1

HEMT métamorphique pour applications de puissance en bande V : influence de la couche de barrière

B. Bonte , M. Ardouin , M. Zaknoune , D. Theron , Y. Cordier et al.
2003, pp.4A2-2
Communication dans un congrès hal-00146696 v1

Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier , P. Lorenzini , Jean Michel Chauveau , D. Ferré , Ydir Androussi et al.
International Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩
Communication dans un congrès hal-00146110 v1

Optimisation des HEMTs AlGaN/GaN/Si

A. Minko , Virginie Hoel , Jean-Claude de Jaeger , Y. Cordier , F. Semond et al.
2003, pp.1D-12
Communication dans un congrès hal-00146697 v1

High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures

Christophe Consejo , Leszek Konczewicz , Sylvie Contreras , Benoit Jouault , S. Lepkowsky et al.
10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), Aug 2002, GUILDFORD (ENGLAND), France. pp.232-237
Communication dans un congrès hal-00544457 v1

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

E. Lefebvre , M. Zaknoune , Y. Cordier , F. Mollot
2003, pp.409-412
Communication dans un congrès hal-00162725 v1

Influence de la température sur les caractéristiques pulsées statiques et hyperfréquences des HEMTs AlGaN/GaN sur substrat silicium résistif (111)

M. Werquin , Christophe Gaquière , N. Vellas , E. Delos , D. Ducatteau et al.
2003, pp.1D-13
Communication dans un congrès hal-00146691 v1

Optimisation des performances statiques des HEMTs AlGaN/GaN par traitement plasma

S. Touati , Virginie Hoel , A. Minko , A. Soltani , Jean-Claude de Jaeger et al.
GDR Grand Gap, 2003, Nice, France
Communication dans un congrès hal-00146718 v1

Thermal characterisation of AlGaN/GaN HEMTs using micro-Raman scatering spectroscopy and pulsed I-V measurements

Raphaël Aubry , Jean-Claude Jacquet , Charu Dua , H. Gerard , B. Dessertenne et al.
International Conference on Silicon Carbide and Related Materials; ICSCRM2003, Oct 2003, Lyon, France. pp.1625-1628
Communication dans un congrès hal-00146669 v1

La filière GaN pour les applications hyperfréquences

Christophe Gaquière , Raphaël Aubry , Yannick Guhel , A. Minko , Nicolas Vellas et al.
9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aygulf, France
Communication dans un congrès hal-00149734 v1

Etude des contacts ohmiques et Schottky sur nitrure de gallium pour composants à effets de champ

Christophe Gaquière , Raphaël Aubry , Yannick Guhel , A. Minko , Nicolas Vellas et al.
GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France
Communication dans un congrès hal-00149717 v1

AlGaN/GaN HEMT for RF power applications

Jean-Claude de Jaeger , Z. Bougria , S. Cassette , E. Chartier , Y. Cordier et al.
10th European Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2002, 2002, Milano, Italy
Communication dans un congrès hal-00149736 v1

AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances

Y. Cordier , F. Semond , P. Lorenzini , N. Grandjean , F. Natali et al.
2002, pp.61-64
Communication dans un congrès hal-00149701 v1

MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier , F. Semond , P. Lorenzini , N. Grandjean , F. Natali et al.
2002, pp.99-100
Communication dans un congrès hal-00149696 v1

Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz

M. Ardouin , B. Bonte , M. Zaknoune , D. Theron , Y. Cordier et al.
2002, pp.165-168
Communication dans un congrès hal-00149697 v1

Caractérisation de transistors à effet de champ à base de GaN

Christophe Gaquière , Raphaël Aubry , Yannick Guhel , A. Minko , Nicolas Vellas et al.
3ème Ecole Thématique CNRS : Matériaux Nitrures d'Eléments III, 2002, La Plagne, France
Communication dans un congrès hal-00149714 v1

Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33 < x < 0.52) buffer layers

D. Vignaud , Y. Cordier , P. Miska , D. Ferré
28th International Symposium on Compound Semiconductors, 2002, Japan. pp.537-542
Communication dans un congrès hal-00250216 v1

Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology

M. Ardouin , B. Bonte , M. Zaknoune , Y. Cordier , S. Bollaert et al.
25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia
Communication dans un congrès hal-00149713 v1

Luminescence de boites InAs obtenues par épitaxie par jets moléculaires sur des couches tampons métamorphiques InxAl1-xAs (0.33 = x = 0.52)

D. Vignaud , Y. Cordier , P. Miska , D. Ferre
Journée thématique Boites quantiques pour les télécommunications optiques, 2002, Rennes, France
Communication dans un congrès hal-00148672 v1

Performance à 60 GHz de HEMTs métamorphiques sur GaAs utilisant une technologie à double recess

M. Zaknoune , M. Ardouin , B. Bonte , Y. Cordier , S. Bollaert et al.
9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aigulf, France
Communication dans un congrès hal-00149738 v1

Large signal behaviour of gallium nitride based HEMT's devices

Christophe Gaquière , Raphaël Aubry , Yannick Guhel , A. Minko , Nicolas Vellas et al.
25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chermogolovska, Russia
Communication dans un congrès hal-00149730 v1

HEMT structures and technology on GaAs and InP for power amplification in millimeter wave range

D. Theron , Y. Cordier , X. Wallart , S. Bollaert , M. Zaknoune et al.
2001, pp.53-56
Communication dans un congrès hal-00152625 v1

High performance AlGaN/GaN HEMTs on a resistive silicon substrate

Virginie Hoel , Y. Guhel , N. Vellas , Christophe Gaquière , Jean-Claude de Jaeger et al.
11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy
Communication dans un congrès hal-00152670 v1

Propriétés de nanostructures InAs réalisées par épitaxie par jets moléculaires sur des couches tampons AlInAs et GaInAs désadaptées sur substrat GaAs

Y. Cordier , P. Miska , D. Vignaud , D. Ferre
8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France
Communication dans un congrès hal-00152090 v1

Les structures métamorphiques AlInAs/GaInAs sur substrat GaAs : croissance et applications

Yvon Cordier , Mohammed Zaknoune , S. Bollaert , Mustafa Boudrissa , E. Lefebvre et al.
20ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2001, 2001, St Aygulf, France
Communication dans un congrès hal-00152677 v1

0.06µm gate length metamorphic InAlAS/InGaAs HEMTs on GaAs with ft and fmax

S. Bollaert , Y. Cordier , M. Zaknoune , T. Parenty , H. Happy et al.
2001, pp.192-195
Communication dans un congrès hal-00151759 v1

Croissance EJM d'îlots InAs sur des tampons AIInAs et GaInAs désadaptés sur GaAs

Y. Cordier , P. Miska , D. Ferre
13ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2000, 2000, Saint Aygulf, France
Communication dans un congrès hal-00158439 v1

MBE growth of InAs dots on InAlAs and InGaAs buffers lattice mismatched on GaAs

Y. Cordier , P. Miska , D. Ferre
Proceedings of the 11th International Conference on Molecular Beam Epitaxy, MBE XI, 2000, Beijing, China
Communication dans un congrès hal-00158218 v1

Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrate

Mustafa Boudrissa , Elisabet Delos , Yvon Cordier , Didier Theron , Jean-Claude de Jaeger
The Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8
Communication dans un congrès hal-00159007 v1

Gate ionization current of an enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate

Mustafa Boudrissa , Elisabet Delos , Yvon Cordier , Didier Theron , Jean-Claude de Jaeger
30th European Microwave Conferences, 2000, Paris, France. pp.90-93
Communication dans un congrès hal-00159006 v1

InAs dots grown by MBE on InAIAs and InGaAs lattice mismatched buffers on GaAs

Y. Cordier , D. Ferre , P. Miska
Proceedings of the 42nd Electronic Materials Conference, Jun 2000, Denver, CO, United States
Communication dans un congrès hal-00158219 v1

Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate

N. Cavassilas , F. Aniel , A. Nojeh , R. Adde , M. Zaknoune et al.
2000, 10 pp
Communication dans un congrès hal-00159003 v1

Charge control and electron transport properties in InyAl1-yAs/InxGa1-xAs metamorphic HEMTs : effect of indium content

Y. Cordier , M. Zaknoune , S. Bollaert , A. Cappy
2000, pp.102-105
Communication dans un congrès hal-00158437 v1

Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content

Y. Cordier , M. Zaknoune , S. Bollaert , A. Cappy
2000, pp.102-105
Communication dans un congrès hal-00159005 v1

HEMT structures on GaAs or InP substrates for millimeter wave power amplification

Didier Theron , Yvon Cordier , X. Wallart , S. Bollaert , Mohammed Zaknoune et al.
24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, May 2000, Aegean Sea, Greece
Communication dans un congrès hal-00159030 v1

Les hétérostructures AlInAs/GaInAs/GaAs métamorphiques : étude de la relaxation

J.M. Chauveau , I. Androussi , D. Ferre , J. Dipersio , Y. Cordier
7èmes Journées de la Matière Condensée, 2000, Poitiers, France
Communication dans un congrès hal-00158438 v1

Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMTs : effect of indium content

Y. Cordier , M. Zaknoune , S. Bollaert , A. Cappy
2000, pp.102-105
Communication dans un congrès hal-00157883 v1

Les matériaux métamorphiques : une voie pour l'intégration de composants pour applications millimétriques sur substrat d'arséniure de gallium

Y. Cordier , A. Cappy , M. Zaknoune , S. Bollaert
Journée Thématique sur l'Electronique Intégrée, 2000, Arcueil, France
Communication dans un congrès hal-00158447 v1

Metamorphic InAIAs/InGaAs HEMTs : material properties and device performance

Y. Cordier , S. Bollaert , M. Zaknoune , J.M. Chauveau , A. Cappy
CAI W.Z. III-V semiconductor heterostructures : physics and devices, Research Signpost, Kerala, India, pp.111-138, 2003
Chapitre d'ouvrage hal-00132383 v1

HEMT's capability for millimeter-wave applications

S. Bollaert , Y. Cordier , M. Zaknoune , T. Parenty , H. Happy et al.
NEY M. Millimeter waves in communication systems, Hermès, pp.15-26, 2001
Chapitre d'ouvrage hal-00132930 v1