
Yvon Cordier
271
Documents
Publications
Publications
A Comparison Study of Substrates Quality for GaN Vertical DevicesInternational GaN4AP Workshop : GaN for Advanced Power Applications, Feb 2025, Catane, Italy
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hal-04988232
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ADICT: Growth of MoS2 Using Molecular Beam EpitaxyJournées scientifiques du PEPR électronique, Mar 2025, Paris, France
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hal-04947519
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Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterizationICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden
Communication dans un congrès
hal-05097968
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Physical and electrical characterization of wide band gap for power electronic applicationSociété Française de Physique, Jun 2025, Troyes, France
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hal-05097944
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Evaluation of Self-Heating Effects in AlGaN Channel Heterostructure field-effect Transistors grown on bulk AlN substrateEuropean Materials Research Society (EMRS) Fall 2024, Sep 2024, Varsovie, Poland
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hal-04761108
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Evaluation of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxyGaN Marathon, Univ. Padova, Jun 2024, Verone, Italy
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hal-04793343
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Carrier density analysis in stressed n-doped GaN layers on sapphireGaN Marathon, Jun 2024, Vérone, Italy
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hal-04639487
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Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxyWocsdice - Exmatec 2023 Conference, May 2023, Palermo, Italy
Communication dans un congrès
hal-04444068
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Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-offSymposium de génie électrique SGE 2023, Université de Lille, Jul 2023, Lille, France
Communication dans un congrès
hal-04127127
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Multiphysics Characterizations of Vertical GaN Schottky Diodes2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩
Communication dans un congrès
hal-03844585
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Electrical control of excitons in GaN/(Al,Ga)N quantum wellsInternational Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany
Communication dans un congrès
hal-04874254
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Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire templateWOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
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hal-03681788
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AlGaN channel high electron mobility transistors on bulk AlN substrateInternational Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany
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hal-03829060
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Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applicationsInternational Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany
Communication dans un congrès
hal-04037282
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[Invited] AlGaN Channel HEMTs for High Voltage ApplicationsMRS Spring Meeting & Exhibit, MRS 2022 spring meeting, May 2022, Honolulu (Online), United States
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hal-03637419
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Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrateWOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
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hal-03681811
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Caractérisation par spectroscopie micro-Raman de diodes GaN SchottkyConférence Internationale Matériaux, Oct 2022, Lille, France
Communication dans un congrès
hal-03844887
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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrateEuropean Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland
Communication dans un congrès
hal-04039596
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Electrical behavior of vertical Schottky diodes on GaN homoepitaxyIWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany
Communication dans un congrès
hal-03854620
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Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrateCompound Semiconductor Week, CSW 2022, Jun 2022, Ann Arbor MI, United States. 2 p
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hal-03828829
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Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applicationsEXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom
Communication dans un congrès
hal-03676503
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GaN-based HEMTs operating as zero-bias microwave detectors at low temperature13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Seville, Spain
Communication dans un congrès
hal-03340956
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An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362
Communication dans un congrès
hal-03362260
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MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODESPOWER 2021 (IMAPS), Nov 2021, Tours, France
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hal-03676940
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Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopyWocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
Communication dans un congrès
hal-03284079
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Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodesWocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.50-52
Communication dans un congrès
hal-03275589
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GaN schottky diode on silicon substrate for high power THz multiplierWOCSDICE 2021, Jun 2021, Bristol, United Kingdom
Communication dans un congrès
hal-03384345
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AlGaN/GaN HEMTs on AlN substrate for power electronics44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE2021, Jun 2021, Bristol (virtual), United Kingdom
Communication dans un congrès
hal-03279160
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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020), Oct 2021, Tours, France
Communication dans un congrès
hal-04038119
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Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland
Communication dans un congrès
hal-02922723
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Développement technologique d'un HEMT normally- off avec une grille à barrière P-GaNSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France
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hal-02918372
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Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
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hal-04039402
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Controlled and thermalized indirect exciton fluids in a GaN/AlGaN quantum well with electrostatic traps20th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Jul 2019, Suzdal, Russia
Communication dans un congrès
hal-04874180
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Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
Communication dans un congrès
hal-02466858
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AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès
hal-02356886
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Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
Communication dans un congrès
hal-02466887
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MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès
hal-04038786
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[Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors13th International Conference on Nitride Semiconductors (ICNS 2019), Jul 2019, Washington, Seattle, United States
Communication dans un congrès
hal-04039430
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Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electron Mobility Transistors on thick AlN/Sapphire Templates13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle WA, United States
Communication dans un congrès
hal-03287398
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Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication CircuitsWOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès
hal-02502499
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GaN Schottky Diode for High Power THz Generation using Multiplier PrincipleProc. 43rd Workshop Compound Semiconductor Devices Integr. Circuits (WOCSDICE), Jun 2019, Cabourg, France
Communication dans un congrès
hal-03384353
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Analysis of microwave detection with GaN HEMTs under RF probesWorkshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2018, May 2018, Bucharest, Romania
Communication dans un congrès
hal-03340979
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Phase transition of indirect excitons in GaN quantum wells.International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan
Communication dans un congrès
hal-01910225
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[Invited] Nouvelles voies technologiques pour la mesure de la température et l’amélioration de la dissipation thermique des HEMTs GaNRF & Microwave 2018, 7ème Salon Radiofréquences, Hyperfréquences, Wireless, CEM et Fibre Optique, Mar 2018, Paris, France
Communication dans un congrès
hal-04441664
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Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells.International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France
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hal-01907806
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Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterréeSymposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
Communication dans un congrès
hal-02981903
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Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells.TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico
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hal-01908823
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Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩
Communication dans un congrès
hal-03270103
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On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩
Communication dans un congrès
hal-03276914
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Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHzJoint 5th International Workshop on Silicon Carbide Hetero-Epitaxy and 5th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC-WASMPE 2013, 2013, Nice, France
Communication dans un congrès
hal-00987957
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AlGaN/GaN HEMTs on HR silicon substrate (111) with an AlN seed film grown by PVD22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. paper 5.6, 2 p
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hal-00877773
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[Invité] Etat de l'art et défis du GaN pour l'électronique14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, Table ronde, 2013, Evian, France
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hal-00878877
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Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States
Communication dans un congrès
hal-00987956
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STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France
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hal-00941541
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Experiments and theory of terahertz transmission through multi-layer semiconductor structures18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 2013, Matsue, Japan
Communication dans un congrès
hal-02454457
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Room temperature generation of THz radiation in GaN quantum wells structuresSPIE Photonic West, 2013, San Francisco, United States. pp.34-40, ⟨10.1117/12.2002504⟩
Communication dans un congrès
hal-01926284
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Epitaxial growth of AlN thin films at low temperature by magnetron sputtering techniqueEuropean Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J - Semiconductor nanostructures towards electronic and optoelectronic device applications IV, 2013, Strasbourg, France
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hal-00878878
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Graphene based near-field thermophotovoltaic conversion system (Orale)Cmos energy technologies research, Jul 2013, Whistler, Canada
Communication dans un congrès
hal-00818643
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AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.37-38
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hal-00828412
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THz emission from 2DEG GaN device18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 2013, Matsue, Japan
Communication dans un congrès
hal-02454369
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AlGaN/GaN heterostructures with very-thin buffer on Si (111) for NEMS applications : electrical and mechanical study22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. 2 p
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hal-00877763
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GaN MEMS resonators : from demonstration to microsystem-compatible performances36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-4
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hal-00801104
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Résonateurs MEMS en nitrure de galliumJournées Nationales du GDR Micro Nano Systèmes-Micro Nano Fluidique, 2012, Bordeaux, France
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hal-00797721
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Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩
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hal-03037521
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Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2
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hal-00801154
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High transconductance on AlGaN/GaN HEMT on (110) silicon substrate7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.413-416
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hal-00814978
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THz transmission modulated by a dc-bias through GaN quantum well structureTERAHERTZ TECHNOLOGY AND APPLICATIONS V, Jan 2012, San Francisco, United States. pp.826111, ⟨10.1117/12.905958⟩
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hal-00814152
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[Invited] AlGaN/GaN and InAlN/GaN HEMTs technology for high frequency wireless communication and applications needing conformabilityEuropean Microwave Week, EuMIC, Workshop W09 - Wideband GaN devices and applications, 2011, Manchester, United Kingdom
Communication dans un congrès
hal-00807597
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Voltage Control of Terahertz Transmission Through GaN Quantum Wells: Experiments and Theory17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra and Stephen M. Goodnick, 2011, Santa Barbara, United States
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hal-02455707
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Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩
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hal-00579046
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High RF performance of AlGaN/GaN HEMT on (110)-oriented silicon substrate20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2
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hal-00800113
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Voltage-controlled sub-THz radiation transmission through GaN heterostructures20th European Heterostructure Technology meeting (HeTech), 2011, Lille, France
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hal-02455809
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[Invité] Micro et nanorésonateurs électromécaniques radio-fréquences. Principes et applicationsTELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, papier 554, 1-6
Communication dans un congrès
hal-00806730
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AlGaN/GaN HEMTs reported on flexible substrate20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2
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hal-00800114
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Caractérisation électrique et hyperfréquence d'épitaxie AlGaN/GaN sur substrat résistif Si(111)13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, 2010, France. pp.CD-ROM, Session Matériaux 2, 1-4
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hal-00573207
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Analysis of AlGaN/GaN epi-material on resistive Si(111) substrate for MMIC applications in millimeter wave range5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.33-36
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hal-00549995
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Experimental investigation of THz transmission in GaN two-dimensional electron gas14th International Symposium on Ultrafast Phenomena in Semiconductors, 2010, Vilnius, Lithuania
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hal-01904173
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AlGaN/GaN HEMTs reported on flexible polyimide substrate5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.9-12
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hal-00549997
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Enhanced terahertz transmission of GaN quantum wells35th International Conference on Infrared, Millimeter and THz Waves, 2010, Rome, Italy
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hal-01904170
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Resonant HEMT transducers and integrated MEMS resonators based on AlGaN/GaN/Si heterostructuresWorkshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010, 2010, Newport Beach, CA, United States
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hal-00808202
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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.1-4
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hal-00536293
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Regrowth of GaN quantum wells on GaN substrates for TeraHertz generation by amplification of transverse electromagnetic waves18th European Heterostructure Technology Workshop – HETECH, 2009, Günzburg / Ulm, Germany
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hal-02455804
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Analysis of the C-V characteristic in SiO2/GaN MOS capacitors7th Spanish Conference on Electron Devices, Feb 2009, Santiago de Compostela, Spain. pp.254
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hal-00475900
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Amplification of nanoscale motion by piezoelectric transduction in GaN resonators18th European Workshop on Heterostructure Technology, HeTech 2009, 2009, Günzburg-Ulm, Germany
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hal-00810577
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Performance of unstuck gamma gate AlGaN/GaN HEMTs on (001) silicon substrate at 10 GHz3rd European Microwave Integrated Circuits Conference, EuMIC 2008, 2008, Netherlands. pp.330-333, ⟨10.1109/EMICC.2008.4772296⟩
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hal-00362379
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Passivation de matériaux et composants III-V par plasma ECR d'azoteJNMO'08 : 12èmes Journées Nano Micro et Optoélectronique, Jun 2008, Saint-Pierre-d'Oléron, France
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hal-00288425
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Le Nitrure de Gallium : un Matériau d'Avenir pour la Conception de Composants de Puissance Haute Tension et Haute TempératureMGE 2008 4ème Colloque Matériaux du Génie Electrique, May 2008, TOULOUSE, France. 4 p
Communication dans un congrès
hal-01002191
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Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)International Workshop on Nitride Semiconductors, Oct 2008, Montreux, Switzerland
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hal-00540445
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Pressure characterization of AlGaN/GaN Hall sensors13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil
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hal-00401344
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Terahertz generation in GaN quantum wells by amplification of transverse electromagnetic wavesEuropean Workshop on Heterostructure Technology, 2008, Venice, Italy. pp.85--86
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hal-01904189
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High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular beam epitaxy for microwave applicationsMaterials Research Society Spring Meeting, MRS Spring 2008, Symposium C : Advances in GaN, GaAs, SiC, and Related Alloys on Silicon Substrates, 2008, San Francisco, CA, United States
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hal-00362029
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Réalisation de grille nitrure de longueur inférieure à 100nm pour des applications haute fréquence de HEMTs AlGaN/GaN15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C1-1-4
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hal-00370327
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Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependenceProceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France
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hal-00394196
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Conception et réalisation de transistors de type FP-HEMT AlGaN/GaN15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.1D10-1-4
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hal-00370331
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AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.96-99, ⟨10.1109/EMICC.2007.4412656⟩
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hal-00284403
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High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1438-1443
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hal-00543735
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MicroRaman analysis of resistance ohmic contact to n-AlGaN/GaNProceedings of the 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Diamond 2005, 2005, Toulouse, France
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hal-00131350
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Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates : application to X-band low noise amplifiers2005, pp.229-232
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hal-00126458
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Low frequency noise behaviour in GaN HEMT's on silicon substrate2004, pp.286-295
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hal-00141967
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Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivitéGDR Grand Gap, 2004, Fréjus, France
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hal-00141965
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Microwave performances of gallium nitride based HEMT's devicesEuropean Microwave Week, 2004, Amsterdam, Netherlands
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hal-00141962
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RF noise and power performances of AlGaN/GaN on Si(111) substrates2004, pp.67-70
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hal-00142303
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Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238
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hal-00142308
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Amélioration des performances des HEMTs AlGaN/GaN sur substrat SiGDR Grand Gap, 2004, Fréjus, France
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hal-00141966
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Optimisation des performances du transistor HEMT AlGaN/GaN sur substrat SiGDR Grand Gap, 2003, Nice, France
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hal-00146717
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Management thermique des transistors HEMT AlGaN/GaNGDR Grand Gap, 2003, Nice, France
Communication dans un congrès
hal-00146694
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HEMT métamorphique pour applications de puissance en bande V : influence de la couche de barrière2003, pp.4A2-2
Communication dans un congrès
hal-00146696
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Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAsInternational Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩
Communication dans un congrès
hal-00146110
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Optimisation des HEMTs AlGaN/GaN/Si2003, pp.1D-12
Communication dans un congrès
hal-00146697
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High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), Aug 2002, GUILDFORD (ENGLAND), France. pp.232-237
Communication dans un congrès
hal-00544457
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Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs2003, pp.409-412
Communication dans un congrès
hal-00162725
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Influence de la température sur les caractéristiques pulsées statiques et hyperfréquences des HEMTs AlGaN/GaN sur substrat silicium résistif (111)2003, pp.1D-13
Communication dans un congrès
hal-00146691
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Optimisation des performances statiques des HEMTs AlGaN/GaN par traitement plasmaGDR Grand Gap, 2003, Nice, France
Communication dans un congrès
hal-00146718
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Thermal characterisation of AlGaN/GaN HEMTs using micro-Raman scatering spectroscopy and pulsed I-V measurementsInternational Conference on Silicon Carbide and Related Materials; ICSCRM2003, Oct 2003, Lyon, France. pp.1625-1628
Communication dans un congrès
hal-00146669
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La filière GaN pour les applications hyperfréquences9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aygulf, France
Communication dans un congrès
hal-00149734
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Etude des contacts ohmiques et Schottky sur nitrure de gallium pour composants à effets de champGDR Semiconducteurs à large bande interdite, 2002, Montpellier, France
Communication dans un congrès
hal-00149717
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AlGaN/GaN HEMT for RF power applications10th European Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2002, 2002, Milano, Italy
Communication dans un congrès
hal-00149736
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AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances2002, pp.61-64
Communication dans un congrès
hal-00149701
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MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances2002, pp.99-100
Communication dans un congrès
hal-00149696
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Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz2002, pp.165-168
Communication dans un congrès
hal-00149697
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Caractérisation de transistors à effet de champ à base de GaN3ème Ecole Thématique CNRS : Matériaux Nitrures d'Eléments III, 2002, La Plagne, France
Communication dans un congrès
hal-00149714
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Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33 < x < 0.52) buffer layers28th International Symposium on Compound Semiconductors, 2002, Japan. pp.537-542
Communication dans un congrès
hal-00250216
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Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia
Communication dans un congrès
hal-00149713
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Luminescence de boites InAs obtenues par épitaxie par jets moléculaires sur des couches tampons métamorphiques InxAl1-xAs (0.33 = x = 0.52)Journée thématique Boites quantiques pour les télécommunications optiques, 2002, Rennes, France
Communication dans un congrès
hal-00148672
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Performance à 60 GHz de HEMTs métamorphiques sur GaAs utilisant une technologie à double recess9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aigulf, France
Communication dans un congrès
hal-00149738
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Large signal behaviour of gallium nitride based HEMT's devices25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chermogolovska, Russia
Communication dans un congrès
hal-00149730
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HEMT structures and technology on GaAs and InP for power amplification in millimeter wave range2001, pp.53-56
Communication dans un congrès
hal-00152625
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High performance AlGaN/GaN HEMTs on a resistive silicon substrate11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy
Communication dans un congrès
hal-00152670
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Propriétés de nanostructures InAs réalisées par épitaxie par jets moléculaires sur des couches tampons AlInAs et GaInAs désadaptées sur substrat GaAs8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France
Communication dans un congrès
hal-00152090
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Les structures métamorphiques AlInAs/GaInAs sur substrat GaAs : croissance et applications20ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2001, 2001, St Aygulf, France
Communication dans un congrès
hal-00152677
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0.06µm gate length metamorphic InAlAS/InGaAs HEMTs on GaAs with ft and fmax2001, pp.192-195
Communication dans un congrès
hal-00151759
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Croissance EJM d'îlots InAs sur des tampons AIInAs et GaInAs désadaptés sur GaAs13ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2000, 2000, Saint Aygulf, France
Communication dans un congrès
hal-00158439
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MBE growth of InAs dots on InAlAs and InGaAs buffers lattice mismatched on GaAsProceedings of the 11th International Conference on Molecular Beam Epitaxy, MBE XI, 2000, Beijing, China
Communication dans un congrès
hal-00158218
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Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrateThe Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8
Communication dans un congrès
hal-00159007
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Gate ionization current of an enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate30th European Microwave Conferences, 2000, Paris, France. pp.90-93
Communication dans un congrès
hal-00159006
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InAs dots grown by MBE on InAIAs and InGaAs lattice mismatched buffers on GaAsProceedings of the 42nd Electronic Materials Conference, Jun 2000, Denver, CO, United States
Communication dans un congrès
hal-00158219
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Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate2000, 10 pp
Communication dans un congrès
hal-00159003
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Charge control and electron transport properties in InyAl1-yAs/InxGa1-xAs metamorphic HEMTs : effect of indium content2000, pp.102-105
Communication dans un congrès
hal-00158437
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Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content2000, pp.102-105
Communication dans un congrès
hal-00159005
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HEMT structures on GaAs or InP substrates for millimeter wave power amplification24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, May 2000, Aegean Sea, Greece
Communication dans un congrès
hal-00159030
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Les hétérostructures AlInAs/GaInAs/GaAs métamorphiques : étude de la relaxation7èmes Journées de la Matière Condensée, 2000, Poitiers, France
Communication dans un congrès
hal-00158438
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Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMTs : effect of indium content2000, pp.102-105
Communication dans un congrès
hal-00157883
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Les matériaux métamorphiques : une voie pour l'intégration de composants pour applications millimétriques sur substrat d'arséniure de galliumJournée Thématique sur l'Electronique Intégrée, 2000, Arcueil, France
Communication dans un congrès
hal-00158447
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Carrier density analysis in stressed n-doped GaN on sapphire layersGaN Marathon 2024, Jun 2024, Verona, Italy. 2024
Poster de conférence
hal-05054677
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Tuning GaN/AlGaN quantum well emission by deposition of Few-Layer Graphene and Nickel/Gold filmsICNS -14th International Conference on Nitride Semiconductors, Nov 2023, Fukuoka, Japan.
Poster de conférence
hal-04793643
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Conception et réalisation technologique de structures HEMTs AlGaN/GaN normally-off à grille P-GaNJEP 2022: Journées des Electroniques de Puissance, Mar 2022, Grenoble, France
Poster de conférence
hal-03621863
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Metamorphic InAIAs/InGaAs HEMTs : material properties and device performanceCAI W.Z. III-V semiconductor heterostructures : physics and devices, Research Signpost, Kerala, India, pp.111-138, 2003
Chapitre d'ouvrage
hal-00132383
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HEMT's capability for millimeter-wave applicationsNEY M. Millimeter waves in communication systems, Hermès, pp.15-26, 2001
Chapitre d'ouvrage
hal-00132930
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Elaboration d'hétérostructures (Al,Ga)N/GaN en vue d'applications électroniques : de la croissance cristalline au composant.Matière Condensée [cond-mat]. Université Nice Sophia Antipolis, 2007
HDR
tel-00588722
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