
Jean-Baptiste Rodriguez
308
Documents
Affiliations actuelles
- Institut d’Electronique et des Systèmes (IES)
- Composants à Nanostructure pour le moyen infrarouge (NANOMIR)
Identifiants chercheurs
Publications
Publications
Interband cascade lasers emitting below 3 µm grown on GaAs substrateThe 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France
Communication dans un congrès
hal-04997754
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Reducing defect density in the epitaxy of III-Vs on Silicon substratesICG2025, Jan 2025, LECCE, Italy
Communication dans un congrès
hal-04907295
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Mid-IR GaSb-based lasers grown on Si platformsSPIE Photonics West 2025, SPIE, Jan 2025, San Francisco (CA, USA), United States
Communication dans un congrès
hal-04934677
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MBE growth of mid-IR interband cascade lasersThe 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France
Communication dans un congrès
hal-04997749
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Optimization of AlSb dislocation filter layer for GaSb-based quantum well lasers grown on Si(001)EMRS Spring Meeting, May 2024, Strasbourg, France
Communication dans un congrès
hal-04739759
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III-V/Si epitaxial growth and antiphase domains: a matter of symmetryOSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France
Communication dans un congrès
hal-04738319
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Single mode distributed feedback interband cascade lasers grown on Si substrateNovel In-Plane Semiconductor Lasers XXIII, Jan 2024, San Francisco, United States. pp.53, ⟨10.1117/12.3003764⟩
Communication dans un congrès
hal-04996188
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Mid-infrared Semiconductor Lasers Grown on group-IV Platforms36th International Conference on the Physics of Semiconductors (ICPS 2024), Jul 2024, Ottawa (Ontario), Canada
Communication dans un congrès
hal-04754234
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Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networksThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Communication dans un congrès
hal-04737830
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New InGaAsSb based T2SL for MWIR detectionThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Communication dans un congrès
hal-04738225
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Electron Channeling Contrast Imaging for epi-layer structural defect characterizationOSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France
Communication dans un congrès
hal-04738266
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The direct epitaxial growth of III-Vs on Silicon substrateJournées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sete, France
Communication dans un congrès
hal-04737922
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Effect of a AlSb filter layer on threading dislocation density during GaSb-on-Si epitaxyDPG Frühjahrstagung (German Physical Society Spring Meeting), Mar 2024, Berlin, Germany
Communication dans un congrès
hal-04739768
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Revisiting the epitaxy of III-Vs on group-IV substratesThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Communication dans un congrès
hal-04737783
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Investigation of Intensity Noise in an Interband Cascade Laser Epitaxially Grown on Silicon and Designed for High-speed Applications2024 Conference on Lasers and Electro-Optics (CLEO 2024), May 2024, Charlotte, NC, United States
Communication dans un congrès
hal-04996211
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Direct epitaxy of lasers on Si: challenges and solutionsOSEPI : Epitaxie des oxydes et des semiconducteurs, May 2024, Fréjus, France
Communication dans un congrès
hal-04739852
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Type-I and type-II interband cascade lasers emitting below 3 µmCompound Semiconductor Week (CSW) 2024, Jun 2024, Lund, Sweden
Communication dans un congrès
hal-04739882
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Interband cascade lasers on mismatched substrates emitting above 4 µmThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE), Sep 2024, Matsue, Shimane, Japan
Communication dans un congrès
hal-04739914
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Understanding III-V/Si Heteroepitaxy: Experiments and Theory8th European conference on crystal growth, Jul 2024, Warsaw, Poland
Communication dans un congrès
hal-04745129
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GaSb-based ICLs grown on GaSb, GaAs and Si substratesMid-IR Optoelectronics: Materials and Devices XVI, Aug 2023, Norman, Oklahoma, United States
Communication dans un congrès
hal-04738303
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Epitaxial integration of mid-infrared III-V devices on group-IV substratesE-MRS ( European Materials Research Society ) Fall Meeting 2023, Symposium A, E-MRS, Sep 2023, Warsaw, Poland
Communication dans un congrès
hal-04245650
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0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montreal, Canada. pp.1-2, ⟨10.1109/IRMMW-THz57677.2023.10299360⟩
Communication dans un congrès
hal-04282977
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Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations“Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France
Communication dans un congrès
hal-04224975
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Cascade lasers epitaxially grown on Silicon substratesInternational Quantum Cascade Lasers School and Workshop, Aug 2022, Zurich - Ascona, Switzerland
Communication dans un congrès
hal-03771073
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Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms2022 IEEE International Photonics Conference, Nov 2022, Vancouver, Canada. ⟨10.1109/IPC53466.2022.9975716⟩
Communication dans un congrès
hal-03906450
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Waveguide-integrated optically-controlled THz modulator47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022, Aug 2022, Delft, Netherlands. ⟨10.1109/IRMMW-THz50927.2022.9895784⟩
Communication dans un congrès
hal-04229373
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Molecular beam epitaxy of III-V semiconductors on group-IV (001) substrates: Formation and burying of antiphase domains.22nd International Conference on Molecular-Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom
Communication dans un congrès
hal-03806222
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Mid-IR lasers monolithically integrated on on-axis SiliconCLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany
Communication dans un congrès
hal-03336448
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Mid-IR lasers epitaxially grown on on-axis (001) SiliconNovel In-Plane Semiconductor Lasers XX, Mar 2021, Online Only, United States. pp.35, ⟨10.1117/12.2576790⟩
Communication dans un congrès
hal-03184742
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Mid-infrared laser diodes grown on various on-axis III-V-on-Si templatesCompound Semiconductor Week (CSW2021), May 2021, Stockholm (on line), Sweden
Communication dans un congrès
hal-03336846
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Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001)21st International Conference on Molecular-Beam Epitaxy (IC-MBE 2021), Sep 2021, online, Mexico
Communication dans un congrès
hal-03336876
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Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03402689
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Carrier recombination and temperature-dependence of GaInSb quantum well lasers for silicon photonics applicationsCLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany
Communication dans un congrès
hal-03336249
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Temperature and High Hydrostatic Pressure Investigations of Epitaxially Grown 2.3-µm GaSb lasers on Si15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom
Communication dans un congrès
hal-03336838
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Analysis of the coupling efficiency between monolithically integrated GaSb laser diodes and SiNx waveguides15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom
Communication dans un congrès
hal-03336700
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Toward mid-infrared laser diodes on Silicon photonic integrated circuitsCLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany
Communication dans un congrès
hal-03336233
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Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronicsWebinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India
Communication dans un congrès
hal-03588366
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MONOLITHIC INTEGRATION OF MID-IR LASERS ON SILICON8th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano), Aug 2021, Milano (on line), Italy
Communication dans un congrès
hal-03336686
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Etched-facets Mid-IR laser on on-axis Silicon substrate for photonic integrated circuitsSemiconductor and Integrated Optoelectronics Conference, Mar 2021, on line, United Kingdom
Communication dans un congrès
hal-03187613
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Sb-based Mid-IR lasers grown by MBE on Silicon(001)21st International Conference on Molecular Beam Epitaxy, Sep 2021, Online, Mexico
Communication dans un congrès
hal-03377236
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Mid-infrared III-V semiconductor lasers grown on (001)Silicon substrates2021 IEEE Summer Topicals Meeting Series, Jul 2021, On line, United States
Communication dans un congrès
hal-03336669
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Infrared unipolar XBn and XBp superlattice photodetectors9th International Symposium on Optronics in Defence & Security (OPTRO 2020), Feb 2020, PARIS, France
Communication dans un congrès
hal-03043516
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Mid-IR lasers sources monolithically integrated on Si substratesSPIE Photonex & Vacuum Expo Digital Forum, Emerging Applications in Silicon Photonics, SPIE, Oct 2020, on line, United Kingdom
Communication dans un congrès
hal-03184754
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InAs/InAsSb T2SL band parameters determination via magnetoabsorption and k.p modelingSPIE Photonics West 2020, Jan 2020, San Francisco, United States
Communication dans un congrès
hal-03043587
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Epitaxial Integration of GaSb-based mid-IR devices on SiliconLight Conference 2019, Jul 2019, Changchun, China
Communication dans un congrès
hal-02342611
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Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrateQSIP2018, Jun 2018, Stockholm, Sweden. pp.39-43, ⟨10.1016/j.infrared.2018.10.006⟩
Communication dans un congrès
hal-01947798
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Mid-IR lasers epitaxially grown on siliconGDR nanoTERAMIR, Jun 2019, Agay, France
Communication dans un congrès
hal-02342614
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Molecular-beam epitaxy of GaInSbBi alloys and QWs10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France
Communication dans un congrès
hal-02327216
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Study of In incorporation into GaSbBi alloys20th European Workshop on Molecular Beam Epitaxy, 2019, Lenggries, Germany
Communication dans un congrès
hal-02327229
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InAs/AlSb quantum cascade lasers grown on silicon substrates (Conference Presentation)Quantum Sensing and Nano Electronics and Photonics XVI, Feb 2019, San Francisco, United States. pp.10926-41
Communication dans un congrès
hal-02342613
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Transmission Electron Microscopy of (In,Ga)(Sb,Bi) epilayers and quantum wells10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France
Communication dans un congrès
hal-02327205
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Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substratesThe 9th International Symposium on Photonics and Electronics Convergence, Nov 2019, Tokyo, Japan
Communication dans un congrès
hal-02383950
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Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)Silicon Photonics XIV, Feb 2019, San Francisco, United States. pp.10923-11
Communication dans un congrès
hal-02342612
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A universal mechanism to describe III-V epitaxy on Si20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Communication dans un congrès
hal-02048639
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Characterization and performance analysis of InAs/GaSb T2SL photodetector for LWIR/VLWIR spectral domainInfrared Colloquium, Mar 2019, Freiburg, Germany
Communication dans un congrès
hal-03043558
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Infrared InAs/GaSb type-II superlattice XBp barrier photodetector for space applicationsGDR Workshop NanoTeraMIR, May 2018, Montpellier, France
Communication dans un congrès
hal-02057389
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Development of Electron Beam Induced Current for diffusion length determination of VLWIR HgCdTe and MWIR T2SL based photodetectorsQSIP2018, Jun 2018, Stockholm, Sweden. pp.170-176
Communication dans un congrès
hal-01962904
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On the origin of defects during III-Sb epitaxy on Si(001)2018 E-MRS Spring meeting, Symposium V, 2018, Strasbourg, France
Communication dans un congrès
hal-02078642
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Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018), 2018, Flagstaff, United States
Communication dans un congrès
hal-02078153
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Mid-IR Optoelectronic devices epitaxially grown on SiliconMid-IR Optoelectronic devices epitaxially grown on Silicon, CLEO 2018, 2018, San Jose, United States
Communication dans un congrès
hal-02078610
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A general III-V/Si growth process descriptionEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01910535
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III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès
hal-01910543
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Sb-based IR Detector and Emitter MaterialsSb-based IR Detector and Emitter Materials, CSWeek 2018, 2018, Boston, United States
Communication dans un congrès
hal-02078599
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InAs/GaSb T2SL photodetector operating in the VLWIR spectral domainInternational Conference on Space Optics (ICSO2018), Oct 2018, Crète, Greece
Communication dans un congrès
hal-02056850
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Material development for longwave and very-longwave InAs/GaSb superlattice barrier structures infrared photodetectorsQuantum Structure Infrared Photodetector (QSIP), Jun 2018, Stockholm, Sweden
Communication dans un congrès
hal-02056846
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Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
Communication dans un congrès
hal-01910556
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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan
Communication dans un congrès
hal-01954906
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Electrical and electro-optical characterizations of LWIR/VLWIR T2SL barrier photodetectorsWorkshop Infrared detection for space applications, 2018, Toulouse, France
Communication dans un congrès
hal-02082999
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Antimonide-based optoelectronic devices epitaxially grown on SiliconInternational nano-optoelectronics workshop (iNOW 2018), 2018, Berkeley, United States
Communication dans un congrès
hal-02078268
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(114) GaP surface texturation on Si for water splittingEMRS Spring meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01708047
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Quantum cascade lasers grown on silicon18th Int. Conf. on Laser Optics, 2018, St Petersburg, Russia
Communication dans un congrès
hal-02078298
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Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells20th International Conference on Molecular-Beam Epitaxy (MBE 2018), 2018, Shanghai, China
Communication dans un congrès
hal-02078204
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A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
Communication dans un congrès
hal-01910554
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GaP Template on Si for Solar Water Splitting: surface energy engineeringnanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
Communication dans un congrès
hal-01909068
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Very long wavelength type-II InAs/GaSb superlattice infrared detectorsInfrared Technology and Applications XLIV, Apr 2018, Orlando, United States. ⟨10.1117/12.2292977⟩
Communication dans un congrès
hal-01796388
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Mid-Infrared 2.7 µm GaSbBi/GaSb quantum well lasers studied under high hydrostatic pressure14th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2018, Flagstaff, United States
Communication dans un congrès
hal-02327248
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GaSb-based lasers in the telecom wavelength range monolithically integrated on SiECOC 2018, Workshop on Integrated Photonics, 2018, Rome, Italy
Communication dans un congrès
hal-02078228
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Electrical and elctro-optical characterization of LWIR/VLWIR T2SL barrier photon-detectorESA and CNES whorkshop on IR detector for space applications, Jul 2018, Toulouse, France
Communication dans un congrès
hal-02056842
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Antimonide-based XBn and XBp superlattices infrared barrier photodetectorsInternational Conference on the Physics od semiconductors, Jul 2018, Montpellier, France
Communication dans un congrès
hal-02056840
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Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared detectionQSIP2018, Jun 2018, Stockholm, Sweden. pp.158-163, ⟨10.1016/j.infrared.2018.10.036⟩
Communication dans un congrès
hal-01962902
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Design and fabrication of Ga-free InAs/InAsSb superlattice XBn photodetector for high operating temperature in the midwave infrared domainGDR workshop NanoTeraMIR, May 2018, Montpellier, France
Communication dans un congrès
hal-02057385
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Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structuresPhotonic West Conference, Feb 2017, San Francisco, United States. ⟨10.1117/12.2251153⟩
Communication dans un congrès
hal-01628430
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Performance analysis of MWIR InAs/GaSb photodiodeInfrared Colloquium, 2017, Freiburg, Germany
Communication dans un congrès
hal-01905818
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InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domainQUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV, 2017, San Francisco, United States. pp.UNSP 1011112, ⟨10.1117/12.2250908⟩
Communication dans un congrès
hal-01628434
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High Bi-content GaSbBi alloys for mid-IR applicationsCSWeek 2017, 2017, Berlin, Germany
Communication dans un congrès
hal-01905735
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Transmission Electron Microscopy of Ga(Sb,Bi) Epilayers and Quantum Wells for Optoelectronic Applications8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany
Communication dans un congrès
hal-01905702
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Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Communication dans un congrès
hal-01891383
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Metamorphic III-Sb lasers epitaxially grown on Si substratesInternational School on Epitaxial Technologies of Novel materials and Nanostructures, 2017, St. Petersburg, Russia
Communication dans un congrès
hal-01905208
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MTF and FPN measurements to evaluate midwave infrared T2SL focal plane arraysQUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV, 2017, San Francisco, United States. pp.UNSP 101111D, ⟨10.1117/12.2251160⟩
Communication dans un congrès
hal-01628443
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GaSb-based lasers epitaxially grown on SiE-MRS Fall meeting, Symposium, 2017, Warsaw, Poland
Communication dans un congrès
hal-01905141
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Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applicationsE-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland
Communication dans un congrès
hal-01905730
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GaSbBi/GaSb quantum well laser diodes8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany
Communication dans un congrès
hal-02327190
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Plasmonic bio-sensing based on highly doped semiconductorsOptics + Photonics (SPIE), 2017, San Diego, United States
Communication dans un congrès
hal-01905149
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III-V/Si 3D crystal growth: a thermodynamic descriptionEnergy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
Communication dans un congrès
hal-01708282
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ANTIMONIDE-BASED SUPERLATTICE NANOSTRUCTURES TO DESIGN LONGWAVE INFRARED BARRIER DETECTORSNanomeeting-2017, 2017, Minsk, Belarus. ⟨10.1142/9789813224537_0108⟩
Communication dans un congrès
hal-01779008
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Metamorphic III-Sb lasers epitaxially grown on Silicon19th European Workshop on Molecular-Beam Epitaxy, (Euro-MBE 2017), 2017, St. Petersburg, Russia
Communication dans un congrès
hal-01905184
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GaSbBi alloys for mid-infrared optoelectronicsFreiburg Infrared Colloqium, 2017, Freiburg, Germany
Communication dans un congrès
hal-01905746
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Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France
Communication dans un congrès
hal-01891389
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Design and modelling of longwave infrared InAs/GaSb superlattice barrier detectors44th International Symposium on Compound Semiconductors (ISCS), 2017, Berlin, Germany
Communication dans un congrès
hal-01905807
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3.8 μm Heterogeneously Integrated III-V on Silicon Micro-Spectrometer18th European Conference on Integrated Optics, 2016, Warsaw, Poland
Communication dans un congrès
hal-01903732
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GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès
hal-01903690
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Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys19th International Conference on Molecular Beam Epitaxy, 2016, Montpellier, France
Communication dans un congrès
hal-02327261
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GaSb lasers grown on Silicon substrate for telecom application19th Conference on Molecular Beam epitaxy (MBE2014), 2016, Montpellier, France
Communication dans un congrès
hal-01903740
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Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2016, Beijing, China
Communication dans un congrès
hal-02327267
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Brewster mode : optical monitoring of the semiconductor doping levelPhotonic West OPTO (SPIE), 2016, San Francisco, United States
Communication dans un congrès
hal-01903684
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Tuning of the localized surface plasmon wavelength in highly doped InAsSb/GaSb nanostructuresPhotonic West OPTO (SPIE), 2016, San Francisco, United States
Communication dans un congrès
hal-01903606
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GaSb grown by molecular beam epitaxy on silicon substrates19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès
hal-01903638
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GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range43rd Int. Symp. on Compound Semiconductors (ISCS 2016), 2016, Toyama, Japan
Communication dans un congrès
hal-01903723
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On the origin of threading dislocations during III-Sb epitaxy on Si(001)19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès
hal-01903706
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Radiometric Characterization of Type-II InAs/GaSb Superlattice (T2SL) Midwave Infrared Photodetectors and Focal Plane ArraysICSOS 2016, Oct 2016, Biarritz, France
Communication dans un congrès
hal-01408899
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GaInSb/AlInSb coupled QWs on GaSb for telecom laserSPIE Photonics West, Opto-2015, Novel In-Plane Semiconductor Lasers XIV, 2015, San Francisco, United States
Communication dans un congrès
hal-01903574
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InAs/GaSb NANOSTRUCTURE ENGINEERING TO DESIGN TYPE-II SUPERLATTICE MIDWAVE INFRARED PHOTODIODENanomeeting – 2015, 2015, Minsk, Belarus. ⟨10.1142/9789814696524_0132⟩
Communication dans un congrès
hal-01779026
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Observation of Fano resonances in highly doped semiconductor plasmonic resonatorsSPIE NanoScience + Engineering, 2015, San Diego, United States
Communication dans un congrès
hal-01903562
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Highly doped semiconductor plasmonics for mid-IR applications7th International Conference on Surface Plasmon Photonics, 2015, Jérusalem, Israel
Communication dans un congrès
hal-01903569
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Flexibility properties of type-II InAs/GaSb SL to design MWIR pin photodiodesSPIE OPTO, 2015, San Francisco, United States. ⟨10.1117/12.2076569⟩
Communication dans un congrès
hal-01756182
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Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p-n junction8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP), Jun 2014, Santa-Fe, United States. pp.76-80, ⟨10.1016/j.infrared.2014.09.036⟩
Communication dans un congrès
hal-01216731
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Terahertz studies of 2D and 3D topological transitions19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012037, ⟨10.1088/1742-6596/647/1/012037⟩
Communication dans un congrès
hal-01249953
v2
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Influence of the InAs/GaSb superlattice period composition on the electro-optical performances of T2SL infrared photodiodeInfluence of the InAs/GaSb superlattice period composition on the electro-optical performances of T2SL infrared photodiode, 2015, Valence, Spain
Communication dans un congrès
hal-01903523
v1
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Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designsSPIE Defense + Security, Apr 2014, Baltimore, United States. ⟨10.1117/12.2050426⟩
Communication dans un congrès
hal-01786508
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Mid-IR heterogeneous silicon photonicsSPIE Photonics West 2014, 2014, San Francisco, United States
Communication dans un congrès
hal-01903127
v1
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GaSb-based active zones for laser emission at 1.55µmInternational Symposium on Compound Semiconductors (ISCS), 2014, Montpellier, France
Communication dans un congrès
hal-01903487
v1
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Influence of the InAs/GaSb thickness ratio on the radiometric performances of MWIR InAs/GaSb superlattice pin photodiodesQuantum Structure Infrared Photodetector (QSIP) Conference, 2014, Santa-Fe, United States
Communication dans un congrès
hal-01903235
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Dopant-free superlattice MWIR pin photodiodeQuantum Structure Infrared Photodetector (QSIP) Conference, 2014, Santa-Fe, United States
Communication dans un congrès
hal-01903220
v1
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Comparison of the electro-optical performance of MWIR InAs/GaSb superlattice pin photodiodes and FPA with asymmetrical designsSPIE “Infrared Technology and Applications XL", 2014, Baltimore, United States
Communication dans un congrès
hal-01903185
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Modeling and measurement of optical properties in InAs/GaSb superlattice structuresQuantum Structure Infrared Photodetector (QSIP) Conference, 2014, Santa-Fe, United States
Communication dans un congrès
hal-01903228
v1
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Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domainsInternational Conference on Space Optics 2014, Oct 2014, Tenerife, Spain. ⟨10.1117/12.2304264⟩
Communication dans un congrès
hal-01786505
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TCAD modeling and characterization of InAs/GaSb superlattice photodiode device for MWIR detection12th Int. Mid-IR Optoelectronics-Materials & Devices Conf (MIOMD XII), 2014, Montpellier, France
Communication dans un congrès
hal-01903206
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1.55 µm GaSb-based lasers monolithically grown on Si substrates18th Conference on Molecular Beam epitaxy (MBE2014), 2014, Flagstaff, United States
Communication dans un congrès
hal-01903137
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Épitaxie par jets moléculaires de semi-conducteurs à base d’antimoine sur substrat Si pour la photoniqueGDR PULSE, Toulouse, 2014, Toulouse, France
Communication dans un congrès
hal-01903148
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Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodesQSIP, Jun 2014, Santa-Fe, United States
Communication dans un congrès
hal-01070571
v1
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Intégration épitaxiale de lasers à base de GaSb sur substrat Si pour émission du proche au moyen IRGDR Ondes, 2014, Orsay, France
Communication dans un congrès
hal-01903151
v1
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Analysis of electrical and electro-optical characteristics of midwave infrared InAs/GaSb SL pin photodiodesSPIE OPTO, 2014, San Francisco, United States. ⟨10.1117/12.2039200⟩
Communication dans un congrès
hal-01756718
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GaSb-based grating regrowth for mid-infrared optoelectronic devices18th IC-MBE, 2014, Flagstaff, United States
Communication dans un congrès
hal-01805131
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Influence of the GaSb layer thickness on the properties of InAs/GaSb SL photodiodes40th Int. Symp. on Compound Semiconductors 2013 (ISCS2013), 2013, Kobe, Japan
Communication dans un congrès
hal-01874659
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All-semiconductor plasmonics for mid-IR applicationsOptics + Photonics (SPIE), 2013, San Diego, United States
Communication dans un congrès
hal-01864287
v1
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Integrated Thin-Film GaSb-based Fabry-Perot Lasers: Towards a Fully Integrated Spectrometer on a SOI Waveguide CircuitSPIE: Quantum Sensing and Nanophotonic Devices, 2013, San Francisco, United States. ⟨10.1117/12.2000707⟩
Communication dans un congrès
hal-01798001
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GaSb-based all-semiconductor mid-IR plasmonicsPhotonics West (SPIE), 2013, San Francisco, United States
Communication dans un congrès
hal-01864230
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InAs/GaSb superlattice pin photodiode: choice of the SL period to enhance the temperature operation in the MWIR domainSPIE OPTO, 2013, San Francisco, United States. ⟨10.1117/12.2001765⟩
Communication dans un congrès
hal-01756716
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Localized Surface Plasmons Resonances on GaSb-based materials for Infrared applicationsPhotonics Plamsonics Magneto-optics 2013, IMAGINENANO, 2013, Bilbao, Spain
Communication dans un congrès
hal-01875563
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Antimonides, a key-enabling-technology for integrated infrared photonicsChinese-German Workshop on “Nano-X Fundmental instruments and research on Novel Nanodevices” 4, 2013, Suzhou, China
Communication dans un congrès
hal-01864297
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Antimonide-based compound semiconductors and devices grown by molecular beam epitaxy17th Euro-Molecular Beam Epitaxy (Euro-MBE), 2013, Levi, Finland
Communication dans un congrès
hal-01797215
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Metal-free plasmonics for infrared applications7th Russian-French workshop on Nanosciences and Nanotechnologies, 2013, Novosibirsk, Russia
Communication dans un congrès
hal-01864257
v1
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InAs/GaSb superlattice pin photodiode : choice of the SL period to enhance the temperature operation in the MWIR domainSPIE “Quantum Sensing and Nanophotonic Devices X”, 2013, San Francisco, United States
Communication dans un congrès
hal-01864247
v1
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Sb-based compound lasers on silicon substratesSilicon & Photonics, 2013, Rennes, France
Communication dans un congrès
hal-01796958
v1
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Defects study in IR photodetectors by DLTSII-VI workshop, 2013, Chicago, United States
Communication dans un congrès
hal-01875555
v1
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Noise measurements for the performance analysis of infrared photodetectors2013 International Conference on Noise and Fluctuations (ICNF), Jun 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6578996⟩
Communication dans un congrès
hal-01786509
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Optimization of InAs/GaSb superlattice pin photodiode design for the high temperature operation in the midwave infrared rangeSPIE OPTO, 2012, San Francisco, United States. ⟨10.1117/12.905976⟩
Communication dans un congrès
hal-01756714
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Impact of nucleation conditions on the properties of GaSb-based heterostructures grown by MBE on GaAs substrates17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan
Communication dans un congrès
hal-01862182
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An overview of the InAs/GaSb infrared detector technology5th International Symposium on Optronics in Defence and Security (OPTRO 2012), 2012, Paris, France
Communication dans un congrès
hal-01861116
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Highly doped semiconductors for mid-infrared plasmonics36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012), 2012, Porquerolles, France
Communication dans un congrès
hal-01862980
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CW operation at RT of Sb-based laser monolithically grown on Si substrateSPIE “Quantum Sensing and Nanophotonic Devices IX", 2012, San Francisco, United States
Communication dans un congrès
hal-01861107
v1
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InGaAsSb/GaSb lasers and photodetectors integrated on a silicon-on-insulator waveguide circuit for spectroscopic applications2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland
Communication dans un congrès
hal-01861067
v1
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Comparison of the electro-optical performances of symmetrical and asymmetrical MWIR InAs/GaSb superlattice pin photodiodesSPIE OPTO, Feb 2012, San Francisco, United States. ⟨10.1117/12.914455⟩
Communication dans un congrès
hal-01786521
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Experimental study of surface plasmons polaritons on arrays of doped and un-doped semiconductors3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics (META2012), 2012, Paris, France
Communication dans un congrès
hal-01862196
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Mid-IR laser diodes epitaxially grown by Molecular Beam epitaxy on silicon substrates11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States
Communication dans un congrès
hal-01861063
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Integrated spectrometer and integrated detectors on Silicon-on-Insulator for short-wave infrared applicationsIEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States
Communication dans un congrès
hal-01862205
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Surface and localized plasmons polaritons on arrays of doped and un-doped semiconductors11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States
Communication dans un congrès
hal-01861443
v1
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Analysis of electrical and phototelectrical characterizations of InAs/GaSbSuperlattice MWIR photodiodesQuantum Structure Infrared Photodetector (QSIP), Jun 2012, Cargèse, France
Communication dans un congrès
hal-01862994
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Photodétecteur à super réseaux InAs/GaSb pour une nouvelle génération de détecteur infrarougeJournée Nationale du Réseau Doctoral en Microélectronique (JNRDM), Paris, 2011, Paris, France
Communication dans un congrès
hal-01860438
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Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin PhotodiodeConference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, United States. pp.801213, ⟨10.1117/12.882133⟩
Communication dans un congrès
hal-00641337
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Sb-based laser grown on Si substrate operating under cw above room temperature38th Int. Symp. on Compound Semiconductors 2011, (ISCS2011), 2011, Berlin, Germany
Communication dans un congrès
hal-01858339
v1
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Metamorphic 6.3 Å GaInSb templates grown on GaAs substrates for mid-IR lasersEuropean Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d'Huez, France
Communication dans un congrès
hal-01858325
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Dark current and noise characterization to evaluate the performance of InAs/GaSb SL photodiodes operating in the mid-wave infrared domainII-VI Workshop, Chicago, 2011, Chicago, United States
Communication dans un congrès
hal-01858347
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Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applicationsConference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, CA, United States. pp.79451K, ⟨10.1117/12.874659⟩
Communication dans un congrès
hal-00641358
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Current developments in MBE growth of highly mismatched materialsEuropean Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d’Huez, France
Communication dans un congrès
hal-01831686
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Noise performance analysis of MWIR InAs/GaSb superlattice pin photodiodesConference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, United States. pp.80120Z, ⟨10.1117/12.883794⟩
Communication dans un congrès
hal-00641342
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Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operationConference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, United States. pp.79451H, ⟨10.1117/12.869631⟩
Communication dans un congrès
hal-00641343
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Performances actuelles et perspectives des photodétecteurs à super réseaux InAs/GaSbJournée Détecteurs Infrarouges, SAGEM, 2011, Paris, France
Communication dans un congrès
hal-01860430
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Molecular beam epitaxy of InSb involving hydrogene plasma substrate cleaning16th International Conference on Molecular Beam Epitaxy, 2010, Berlin, Germany
Communication dans un congrès
hal-01830953
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Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation.Conference On Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco (CA), France. pp.76081U
Communication dans un congrès
hal-00543643
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Sb-based laser sources grown by molecular beam epitaxy on silicon substratesPhotonics West 2010, Novel In-Plane Semiconductor Lasers IX, 2010, San Francisco, United States
Communication dans un congrès
hal-01830461
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Lasers moyen-infrarouge à base d’antimoine réalisés sur substrat Silicium13ème Journées Nano, Micro et Optoélectronique (JNMO 2010), 2010, Les Issambres, France
Communication dans un congrès
hal-01831640
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Propriétés électriques de photodiodes infrarouges à superréseaux InAs/GaSbXIIIème Journées Nationales Microélectronique Optoélectronique (JNMO), 2010, Les Issambres, France
Communication dans un congrès
hal-01831153
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Dark current and noise measurements in InAs/GaSb superlattice detectorsOPTO, 2010, San Francisco, United States. ⟨10.1117/12.840016⟩
Communication dans un congrès
hal-01756712
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GaSb based,1.55 µm laser monolithically integrated on Silicon substrates operating at room temperature22nd Int. Conf. on InP and Related Materials (IPRM 2010), 2010, Takamatsu, Japan
Communication dans un congrès
hal-01830913
v1
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Improvement of MWIR SL Photodiode using an asymmetrical period design10th Int. Mid-IR Optoelectronics-Materials & Devices Conference (MIOMD X), 2010, Shanghai, China
Communication dans un congrès
hal-01830942
v1
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Residual carrier concentration in InAs/GaSb superlattice structures to define optimized midwave infrared photodiodeExmatec Conference, 2010, Darmstadt, Germany
Communication dans un congrès
hal-01831030
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Surface treatments of Sb-based materials for infrared photodetectorsMOLMAT 2010 Conference, 2010, Montpellier, France
Communication dans un congrès
hal-01830991
v1
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Sb-based lasers grown on highly mismatched substratesMid-Infrared Optoelectronics: Materials and Devices (MIOMD X), 2010, Shanghai, China
Communication dans un congrès
hal-01831036
v1
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GaSb based, 1.55 µm laser monolithically integrated on Silicon substrate operating at room temperatureIEEE Indium Phosphide and Related Materials (IPRM) 2010, 2010, Kagawa, Japan
Communication dans un congrès
hal-01828237
v1
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Heterogeneous Integration of GaSb-based epitaxy on silicon-on-insulator: towards mid-infrared photonic integrated circuits for environmental and bio-medical applications10th MIOMD Conference, 2010, Shanghai, China
Communication dans un congrès
hal-01831108
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GaSb based solar cells designed for high solar concentrationThin films 2010 International Conference, 2010, Aix en Provence, France
Communication dans un congrès
hal-01831005
v1
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Room Temperature, Continuous Wave Operation of an Sb-Based Laser Grown on GaAs SubstrateConference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States
Communication dans un congrès
hal-01828223
v1
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Mid-IR Sb-based lasers grown on highly mismatched GaAs and Si substrates36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States
Communication dans un congrès
hal-01828229
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Surface treatment of antimonide-based materials by electrochemical process2nd International Workshop on Chemistry and Applications (CIC2), 2009, Batna, Algeria
Communication dans un congrès
hal-01828281
v1
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Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16), Aug 2009, Montpellier (FRANCE), France. pp.012030
Communication dans un congrès
hal-00536291
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Antimonide-based structures for photodiode and photovoltaic systemsWorkshop "Frontiers of nanoscale spintronics, photodetection and photovoltaic", 2009, Marseille, France
Communication dans un congrès
hal-01826614
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Effect of pressure on electrical properties of short period InAs/GaSb superlattice13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.643-647
Communication dans un congrès
hal-00401354
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New chemical etching procedures of antimonide-based materials for infrared detectors2d International Meeting on Materials for Electronic Applications, 2009, Hammamet, Tunisia
Communication dans un congrès
hal-01828306
v1
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Mid-IR GaSb-based lasers on highly mismatched GaAs and Si substratesWorkshop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE 2009), 2009, Malaga, Spain
Communication dans un congrès
hal-01827647
v1
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Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular-beam-epitaxy15th European Workshop on Molecular-Beam Epitaxy (Euro-MBE 15), 2009, Zakopane, Poland
Communication dans un congrès
hal-01827641
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Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrateConference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States
Communication dans un congrès
hal-01828217
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Improvement performances of InAs/GaSb superlattice photodiodeEXMATEC'08, 2008, Lodz, Poland
Communication dans un congrès
hal-01825856
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Improvement material performances of InAs/GaSb superlattice photodiodesEXMATEC, Jun 2008, Łódź, Poland
Communication dans un congrès
hal-00401337
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Surface treatments of Sb-based photodetectorsMADICA 2008, 2008, Rabat, Morocco
Communication dans un congrès
hal-01825849
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Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxyInternational Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès
hal-01825828
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Electrical and optical properties of InAs/InSb/GaSb superlattices for mid-infrared applications.14th International Symposium nanostrucutres : Physics and Technology., Jun 2006, St Petersbourg., Russia
Communication dans un congrès
hal-00103333
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Photodétecteurs infrarouges non redroidis à superréseaux InAs/GaSb : modélisation et caractérisation optique.11eme Journées Nano-Micro Electronique et Optoélectronique, Apr 2006, Aussois, France
Communication dans un congrès
hal-00102206
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Multiphysic FEMLAB modelling to evaluate mid-infrared photonic detector performancesNov 2005, pp.109-112
Communication dans un congrès
hal-00102053
v4
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A survey of new laser and detector structures for 3-5 μm midinfrared spectral rangeSPIE Proceedings, 2004, Karkhov, Russia. ⟨10.1117/12.583464⟩
Communication dans un congrès
hal-01756650
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New laser and detector structures for mid-infraredCAOL'03. 1st International Conference on Advanced Optoelectronics and Lasers. Jointly with 1st Workshop on Precision Oscillations in Electronics and Optics, 2003, Alushta, Ukraine. ⟨10.1109/CAOL.2003.1250502⟩
Communication dans un congrès
hal-01756652
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Threading and misfit dislocations study by Electron Channeling Contrast ImagingEuro MBE 2025, Mar 2025, Auron, France
Poster de conférence
hal-04992047
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Direct growth of GaSb on Ge, Ge-on-Si and SiGe-on-Si platforms for integrated mid infra-red photonicsThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Poster de conférence
hal-04737853
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Kinetic Monte Carlo simulation of GaAs growth on (001) SiliconJournées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France.
Poster de conférence
hal-04738181
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Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonicsJournées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France.
Poster de conférence
hal-04738104
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Type-I and type-II interband cascade lasers emitting around 2.7 µmJournées Nano, Micro et Optoelectronique (JNMO) 2024, Oct 2024, Sète, France
Poster de conférence
hal-04738411
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Type-II Interband cascade lasers grown on (100) GaAs substrates21st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain. 2023
Poster de conférence
hal-04282761
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Effectiveness of AlSb dislocation filter layer during GaSb‐on‐Si epitaxyEuro MBE 2023, Apr 2023, Madrid, Spain.
Poster de conférence
hal-04739795
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MIR Sb-based Interband cascade lasers on metamorphic substratesInternational Nano-Optoelectronics Workshop (iNOW) 2023, Jul 2023, Würzburg, Germany. 2023
Poster de conférence
hal-04282939
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ICLs à 3,3 µm sur substrats de GaSb, GaAs et Si (001)GDR MatEpi 2023, Jul 2023, Paris, France. 2023
Poster de conférence
hal-04282846
v1
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In situ determination of the optimized growth conditions of GaSbBi alloys10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France
Poster de conférence
hal-02327276
v1
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Ga(In)SbBi alloys for mid-IR applications: growth and characterization16èmes journées Nano, Micro et Optoélectronique, 2018, Cap Esterel, France
Poster de conférence
hal-02327294
v1
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GaSbBi/GaSb quantum wells for Mid-Infrared: growth and characterization34th International Conference on the Physics of Semiconductors, 2018, Montpellier, France
Poster de conférence
hal-02327289
v1
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Growth and characterization of high Bi-content GaSbBi alloys19th European Workshop on Molecular Beam Epitaxy, 2017, Saint-Petersburg, Russia
Poster de conférence
hal-02327303
v1
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Épitaxie et étude de matériaux et composants à semiconducteurs antimoniurésScience des matériaux [cond-mat.mtrl-sci]. Université Montpellier, 2020
HDR
tel-03160492
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GaSbBi alloys and heterostructures: fabrication and propertiesWang, Shumin and Lu, Pengfei. Bismuth-Containing Alloys and Nanostructures, Springer Series in Materials Science, pp.125-161, 2019, 978-981-13-8077-8. ⟨10.1007/978-981-13-8078-5_6⟩
Chapitre d'ouvrage
hal-02326182
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Epitaxial Integration of Antimonide-Based Semiconductor Lasers on SiSilicon Photonics, 99, Academic Press, pp.1-25, 2018, Semiconductor and Semimetals, 978-0-12-815099-3. ⟨10.1016/bs.semsem.2018.08.002⟩
Chapitre d'ouvrage
hal-02342602
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GaSb Lasers Grown on Silicon Substrate for Telecom ApplicationsMolecular Beam Epitaxy, Elsevier, pp.625-635, 2018, 978-0-12-812136-8. ⟨10.1016/B978-0-12-812136-8.00029-3⟩
Chapitre d'ouvrage
hal-02342603
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Superréseaux InAs/GaSb réalisés par épitaxie par jets moléculaires pour photodétection à 300 K dans le moyen-infrarougeMicro et nanotechnologies/Microélectronique. Université Montpellier II - Sciences et Techniques du Languedoc, 2005. Français. ⟨NNT : ⟩
Thèse
tel-00618583
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