Cyrille LE ROYER

35
Documents
Affiliation actuelle
  • Département Composants Silicium (DCOS)
Identifiants chercheurs
Contact

Présentation

Domaines de recherche

Micro et nanotechnologies/Microélectronique

Compétences

gestion de projet dispositifs à semiconducteur MOSFET dispositifs de puissance

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Publications

Image document

Impact of the Recessed Gate Depth on the GaN MIS-HEMT Performances: New Insights on Mobility Extraction

Clémentine Piotrowicz , Blend Mohamad , Nathalie Malbert , Stéphane Becu , Simon Ruel et al.
Journal of Applied Physics, 2024, 135 (17), pp.175701. ⟨10.1063/5.0205840⟩
Article dans une revue cea-04667617 v1

Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors

Maxime Legallais , Gauthier Lefevre , Simon Martin , Sébastien Labau , Franck Bassani et al.
Advanced Materials Interfaces, 2022, 9 (5), ⟨10.1002/admi.202101731⟩
Article dans une revue hal-04222343 v1

Study of an Al<sub>2</sub>O<sub>3</sub>/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage <i>V</i><sub>TH</sub>

Laura Vauche , Antoine Chanuel , Eugénie Martinez , Marie-Christine Roure , Cyrille Le Royer et al.
ACS Applied Electronic Materials, 2021, 3 (3), pp.1170 - 1177. ⟨10.1021/acsaelm.0c01023⟩
Article dans une revue cea-04565961 v1

Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Bledion Rrustemi , Marie-Anne Jaud , François Triozon , Clémentine Piotrowicz , William Vandendaele et al.
Journal of Applied Physics, 2021, 130, pp.105704. ⟨10.1063/5.0058019⟩
Article dans une revue cea-04822316 v1

Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage

Carlos Diaz Llorente , Christoforos Theodorou , Jean-Pierre Colinge , Sorin Cristoloveanu , Sébastien Martinie et al.
ECS Transactions, 2019, 89 (3), pp.111-120. ⟨10.1149/08903.0111ecst⟩
Article dans une revue hal-02415983 v1

Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration

Carlos Navarro , Meng Duan , Mukta Singh Parihar , Fikru Adamu-Lema , Stefan Coseman et al.
IEEE Transactions on Electron Devices, 2017, 64 (12), pp.4904-4909. ⟨10.1109/TED.2017.2759308⟩
Article dans une revue hal-02006997 v1
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Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM

Carlos Navarro , Joris Lacord , Mukta Singh Parihar , Fikru Adamu-Lema , Meng Duan et al.
IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
Article dans une revue hal-02006362 v1

Z2-FET: A promising FDSOI device for ESD protection

Yohann Solaro , Jing Wan , Pascal Fonteneau , Claire Fenouillet-Beranger , Cyrille Le Royer et al.
Solid-State Electronics, 2014, 97, pp.23-29. ⟨10.1016/j.sse.2014.04.032⟩
Article dans une revue hal-02002977 v1
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Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes

Heimanu Niebojewski , Cyrille Le Royer , Y. Morand , Olivier Rozeau , Marie-Anne Jaud et al.
Solid-State Electronics, 2014, 97, pp.45-51. ⟨10.1016/j.sse.2014.04.028⟩
Article dans une revue hal-01000014 v1

Electron-Hole Bilayer TFET: Experiments and Comments

Alberto Revelant , Anthony Villalon , Yan Wu , Alexander Zaslavsky , Cyrille Le Royer et al.
IEEE Transactions on Electron Devices, 2014, 61 (8), pp.2674-2681. ⟨10.1109/TED.2014.2329551⟩
Article dans une revue hal-02003477 v1

Further Insights in TFET Operation

Anthony Villalon , Gilles Le Carval , Sébastien Martinie , Cyrille Le Royer , Marie-Anne Jaud et al.
IEEE Transactions on Electron Devices, 2014, 61 (8), pp.2893-2898. ⟨10.1109/TED.2014.2325600⟩
Article dans une revue hal-02003390 v1

Total Ionizing Dose Effects in Si-Based Tunnel FETs

Lili Ding , Elena Gnani , Simone Gerardin , Marta Bagatin , Francesco Driussi et al.
IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.2874-2880. ⟨10.1109/TNS.2014.2367548⟩
Article dans une revue cea-04608345 v1
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DLTS Investigation of Implantation-induced Defects in 4H-SiC Power Diodes

Eric Vandermolen , Charles Leroux , Ahmad Abbas , Philippe Godignon , Cyrille Le Royer et al.
WOCSDICE-EXMATEC 2024, K. Zekentes and E. Iliopoulos, FORTH, Greece, May 2024, Heraklion, Greece
Communication dans un congrès hal-04673040 v1
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Temperature dependence of 1200V-10A SiC power diodes: impact of design and substrate on electrical performance

Ahmad Abbas , Cyrille Le Royer , Romain Lavieville , Jérôme Biscarrat , Guillaume Gelineau et al.
ICSCRM 2024 - the International Conference on Silicon Carbide and Related Materials, Sep 2024, Raleigh, United States. pp.581-583, ⟨10.4028/b-f6NMEP⟩
Communication dans un congrès cea-04754541 v1
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GaN and wide-bandgap semiconductor devices for power electronics applications

Julien Buckley , Philippe Godignon , Cyrille Le Royer , Etienne Nowak , René Escoffier et al.
APWS 2024 - The 11th Asia-Pacific Workshop on Widegap Semiconductors, Oct 2024, Busan, South Korea
Communication dans un congrès cea-04766402 v1
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New insights using avalanche mode for pn-wafer evaluation of SiC diodes technology and design ruggedness

Ahmad Abbas , Cyrille Le Royer , Romain Lavieville , Saliou Gningue , Rihab Chouk et al.
ISPSD 2024 - 36th International Symposium on Power Semiconductor Devices and ICs, Jun 2024, Brême, Germany. pp.176-179, ⟨10.1109/ISPSD59661.2024.10579466⟩
Communication dans un congrès cea-04754535 v1

Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications

Blend Mohamad , Cyrille Le Royer , Florian Rigaud-Minet , Clémentine Piotrowicz , Pedro Fernandes Paes Pinto Rocha et al.
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2023, Seoul, South Korea. ⟨10.1109/EDTM55494.2023.10102971⟩
Communication dans un congrès cea-04528484 v1
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Recent Achievements in Recessed Gate MOS-channel HEMT Technology

Etienne Nowak , Blend Mohamad , Stéphane Becu , Jérôme Biscarrat , Cédric Masante et al.
WOCSDICE - EXMATEC, May 2023, Palerme, Italy
Communication dans un congrès cea-04665737 v1
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Impact of gate morphology on electrical performances of recessed GaN-on Si MOS channel-HEMT for different channel orientations

Clémentine Piotrowicz , Blend Mohamad , Pedro Fernandes Paes Pinto Rocha , N. Malbert , Simon Ruel et al.
ISPSD 2023 - International Symposium on Power Semiconductor Devices and ICs, May 2023, Hong-Kong, Hong Kong SAR China. pp.382-385, ⟨10.1109/ISPSD57135.2023.10147642⟩
Communication dans un congrès cea-04528487 v1
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Recent advances in GaN power devices development at CEA-LETI

Romain Gwoziecki , Julien Buckley , Cyrille Le Royer , Laura Vauche , Blend Mohamad et al.
GaN MARATHON, Jun 2022, Venise, Italy
Communication dans un congrès cea-03870230 v1
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Gallium nitride power devices for power conversion applications

Julien Buckley , René Escoffier , Blend Mohamad , Stéphane Becu , Jérôme Biscarrat et al.
ENGE 2022 - The 7th International Conference on Electronic Materials and Nanotechnology for Green Environment, Nov 2022, Jeju, South Korea
Communication dans un congrès cea-03968435 v1

Y-unction based methodology for accurate statistical extraction of HEMT device parameters for GaN technology

R. Kom Kammeugne , Romeo Kom Kammeugne , Charles Leroux , Jacques Cluzel , Laura Vauche et al.
EUROSOI-ULIS 2020 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩
Communication dans un congrès cea-03167130 v1

Innovative tunnel FET architectures

Carlos Diaz Llorente , Sébastien Martinie , Sorin Cristoloveanu , Jean-Pierre Colinge , Cyrille Le Royer et al.
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.25-28, ⟨10.1109/ULIS.2018.8354725⟩
Communication dans un congrès hal-02007301 v1

Z2-FET memory for low power applications

Mukta Singh Parihar , Kyunghwa Lee , Hassan El Dirani , Carlos Navarro , Joris Lacord et al.
Semiconductor Memories Workshop, 2017 ESSDERC, Sep 2017, Leuven, Belgium
Communication dans un congrès hal-02009925 v1

Low-Power Z2-FET Capacitorless 1T-DRAM

Mukta Singh Parihar , Kyung Hwa Lee , Hassan El Dirani , Carlos Navarro , Joris Lacord et al.
2017 IEEE International Memory Workshop (IMW), May 2017, Monterey, United States. pp.103-106, ⟨10.1109/IMW.2017.7939093⟩
Communication dans un congrès hal-02007121 v1

A lesson from archeology: The buried gates

Antoine Litty , Yohann Solaro , Hassan El Dirani , Sylvie Ortolland , Pascal Fonteneau et al.
2015 Advanced Research Workshop Future Trends in Microelectronics: Journey into the Unknown, Jun 2015, Mallorca, Spain
Communication dans un congrès hal-02008421 v1

New features in planar SiGe channel tunnel FETs performance and operation

Cyrille Le Royer , Louis Hutin , Sebastien Martinie , Pascal Nguyen , Sylvain Barraud et al.
2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.91-92
Communication dans un congrès hal-02004156 v1

First demonstration of ultrathin body c-SiGe channel FDSOI pMOSFETs combined with SiGe(:B) RSD: Drastic improvement of electrostatics (Vth,p tuning, DIBL) and transport (μ0, Isat) properties down to 23nm gate length

Cyrille Le Royer , A. Villalon , M. Casse , D. Cooper , J. Mazurier et al.
2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, United States. pp.16.5.1-16.5.4, ⟨10.1109/IEDM.2011.6131567⟩
Communication dans un congrès cea-04608302 v1

A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystals

D. Deleruyelle , C. Leroyer , B. de Salvo , G. Lecarval , M. Gely et al.
Silicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404
Communication dans un congrès hal-00485182 v1

Coulomb Blockade in Thin SOI Nanodevices

D. Fraboulet , X. Jehl , D. Mariolle , Cyrille Le Royer , G. Le Carval et al.
32nd European Solid-State Device Research Conference, Sep 2002, Firenze, France. pp.395-398, ⟨10.1109/ESSDERC.2002.194951⟩
Communication dans un congrès hal-04721130 v1
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Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the fully recessed gate architecture

Cyrille Le Royer , Blend Mohamad , Jérôme Biscarrat , Laura Vauche , René Escoffier et al.
ISPSD 2022 - IEEE 34th International Symposium on Power Semiconductor Devices and ICs, May 2022, Vancouver, Canada. 2022, ⟨10.1109/ISPSD49238.2022.9813672⟩
Poster de conférence cea-04577370 v1