David Trémouilles
- Laboratoire d'analyse et d'architecture des systèmes (LAAS)
- Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE)
Publications
Publications
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Méthodologie innovante pour la caractérisation dynamique, reproductible et sans parasite de composants p-GaN HEMTs ; mise en évidence d'effets exclusivement dynamiquesSGE 2025 - Sixième Symposium de Génie Électrique, Jul 2025, Toulouse, France |
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Experimental Investigation and Behavioral Modeling of the Ron vs. Gate Overshoots Relationship in Schottky p-GaN HEMTs2025 IEEE 12th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Nov 2025, Fayetteville, AR, United States. pp.1-6, ⟨10.1109/WiPDA63755.2025.11303413⟩ |
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Mécanismes physiques de HEMT GaN révelés par l'instabilité de la tension de seuilSymposium de Génie Électrique, Jul 2025, Toulouse, France |
Static vs. Dynamic Characterization of p-GaN HEMTs: Discrepancies in Electrical Characteristics and their Dependence on Bias HistoryThe 26th European Conference on Power Electronics and Applications, GDR SEEDS France & EPE Association, Mar 2025, Paris, France. ⟨10.34746/epe2025-0309⟩ |
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Analysis of Failure Mechanisms Occuring at Breakdown Voltage in power p-GaN HEMT31st edition of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2024), Jul 2024, Singapore (SG), Singapore |
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Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2024, Sep 2024, Parma, Italy |
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Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurementWOCSDICE - EXMATEC 2023 6th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 2023, Palerme, Italy |
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Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩ |
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Méthode de préconditionnement du HEMT GaN pour une mesure reproductible de VthSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France. https://sge2023.sciencesconf.org/resource/page/id/35 |
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Over-Voltage and Cross-Conduction Hard Switching Stress on Schottky Gate-Type p-GaN HEMT in Half-Bridge Operation Experimental and Physical Approaches [ESREF'23]34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115172⟩ |
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Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms EnvironmentWorkshop on Wide Bandgap Power Devices & Applications (WiPDA) 2023, Dec 2023, Charlotte (North Carolina), United States. ⟨10.1109/WiPDA58524.2023.10382216⟩ |
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Transmission Line Approach for the PCB Gate Interconnection Design in GaN-Based High-Frequency Power ConvertersPCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2021, on line, France |
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Experimental Comparison of Discrete Cascode GaN-GaN and Single e-GaN in High-Frequency Power ConverterPCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Jul 2020, Nuremberg (Virtual), Germany |
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Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (virtuel), France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215645⟩ |
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Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaNJournées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France |
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Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterréeSymposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5 |
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Variation de la résistance de contact métal/semi-conducteur dans une structure HEMT GaN sous illumination UVSymposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. 4p |
Investigation on damaged planar-oxide of 1200V SiC Power Mosfets in non-destructive short-circuit operation28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sept. 25-28, 2017, Bordeaux (FRANCE), 2017, Bordeaux, France |
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Robustesse de MESFET SiC face aux décharges électrostatiquesSGE Symposium de Génie Electrique, Jun 2016, Grenoble, France |
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Mesure de résistance dynamique de HEMT en GaN à l'échelle de la centaine de nanosecondesSymposium de Genie Electrique, Jun 2016, Grenoble, France |
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Fiabilité de MESFET SiC face aux décharges électrostatiquesSymposium de Genie Electrique, Jun 2016, Grenoble, France |
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Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading18th European Conference on Power Electronics and Applications (EPE'2016), Sep 2016, Karlsruhe, Germany. ⟨10.1109/EPE.2016.7695492⟩ |
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An Electrostatic-Discharge-Protection Solution for Silicon-Carbide MESFETEOS/ESD Symposium, Sep 2015, Reno, United States |
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Analyse du mécanisme d'un défaut ESD sur un MESFET en SiCJournées Nationales du Réseau de Doctorants en Microélectronique, Jun 2015, Bordeaux, France |
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Tackling the challenges of System level ESD: from efficient ICs ESD protection to system level predictive modelingTaiwan ESD and Reliability Conference, Nov 2013, Hsinchu, Taiwan |
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Transient-TLP (T-TLP): a simple method for accurate ESD protection transient behavior measurementEOS/ESD Symposium, Sep 2013, LAS VEGAS, United States. pp.258-267 |
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High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power technologyElectrical Overstress/Electrostatic Discharge Symposium (EOS/ESD 2011), Sep 2011, ANAHEIM, United States. pp.1B.2-1B.8 |
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Behavioral-Modeling Methodology to Predict Electrostatic-Discharge Susceptibility Failures at System Level : an IBIS ImprovementInt. Symposium on Electromagnetic Compatibility (EMC Europe 2011), Sep 2011, YORK, United Kingdom. pp.457-463 |
Life Cycle Assessment on a 765 kV Venezuelan Transmission SystemiREED, Mar 2011, Lille, France. pp.CD |
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Advanced ESD power clamp design for SOI FinFET CMOS technologyInternational Conference on IC Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.43-46, ⟨10.1109/ICICDT.2010.5510299⟩ |
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Accurate Transient Behavior Measurement of High- Voltage ESD Protections Based on a Very Fast Transmission-Line Pulse System31st Electrical Overstress/Electrostatic Discharge Symposium, 2009. EOS/ESD Symposium, Aug 2009, ANAHEIM, United States. pp.165-172 |
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Pushing away the silicon limits of ESD protection structures: exploration of crystallographic orientationBIPOLAR/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2008, Monterey, United States. pp.200-203 |
Different failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structureEuropean Symposium on Reliability of Electron Devices, Failure Physics and analysis (ESREF), 2005, arcachon, France. pp.1415-1420 |
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ESD Induced Latent Defects In CMOS ICs And Reliability ImpactElectrical Overstress and Electrostatic Discharge (EOS/ESD) Symposium, Sep 2004, Dallas, United States. pp.174-181 |
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Design Guidelines to Achieve a Very High ESD Robustness in a Self-Biased NPNElectrical Overstress and Electrostatic Discharge Symposium, Oct 2002, Charlotte, United States. pp.281-288 |
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Mécanismes physiques de HEMT GaN révélés par l'instabilité de la tension de seuilSymposium de Génie Électrique, Jul 2025, Toulouse, France |
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Protection ESD pour MESFET SiCJournées Intégration et Systèmes de Puissance 3D (ISP3D), Mar 2015, Tours, France. 2015 |
Générateur d'impulsion et circuit de commande d'un composant électronique de puissanceFrance, N° de brevet: FR3161521. 2024, https://data.inpi.fr/brevets/FR3161521 |
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The Decisive Role of Gate Voltage Overshoots on the Ron of p-GaN HEMTs in Realistic Dynamic Operation2025 |
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Driving of GaN HEMT2022 |
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Parseval’s Theorem Used for the Inductor Analysis in High-Frequency Boost ConvertersELECTRIMACS 2019 Selected Papers, pp.347-362, 2020, 978-3-030-56970-9. ⟨10.1007/978-3-030-56970-9_26⟩ |
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IMPULSIONS ÉLECTRIQUES DE FORTE PUISSANCE , DE LA NANOSECONDE À LA MICROSECONDE , DU WATT AU KILOWATTMicro et nanotechnologies/Microélectronique. UT3 : Université Toulouse 3 Paul Sabatier, 2019 |
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Optimisation et modélisation de protection intégrées contre les décharges électrostatique, par l'analyse de la physique mise en jeuMicro et nanotechnologies/Microélectronique. INSA de Toulouse, 2004. Français. ⟨NNT : ⟩ |