David Trémouilles

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david-tremouilles
0000-0001-8446-9129
IdRef : 085211850
Google Scholar : https://scholar.google.fr/citations?user=VzZUtFQAAAAJ

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Publications

	Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements L. Ghizzo , David Trémouilles , Frédéric Richardeau , G. Guibaud Solid-State Electronics, 2024, 214, pp.108868. ⟨10.1016/j.sse.2024.108868⟩ Journal articles hal-04446838v1
	New reliability model for power SiC MOSFET technologies under static and dynamic gate stress M. Zerarka , V. Rustichelli , O. Perrotin , J.M. Reynes , David Trémouilles Microelectronics Reliability, 2023, 150, pp.115190. ⟨10.1016/j.microrel.2023.115190⟩ Journal articles hal-04298338v1
	Preconditioning of p-GaN power HEMT for reproducible V measurements L. Ghizzo , David Trémouilles , Frédéric Richardeau , S. Vinnac , Lucas Moreau Microelectronics Reliability, 2023, 144, pp.114955. ⟨10.1016/j.microrel.2023.114955⟩ Journal articles hal-04049626v1
	Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches L. Ghizzo , David Trémouilles , Frédéric Richardeau , S. Vinnac , F. Jamin Microelectronics Reliability, 2023, 150, pp.115172. ⟨10.1016/j.microrel.2023.115172⟩ Journal articles hal-04242294v1
	First results on 1.2 kV SiC MOSFET body diode robustness tests Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , David Trémouilles Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩ Journal articles hal-04282544v1
	Physical origin of the gate current surge during short-circuit operation of SiC MOSFET François Boige , David Trémouilles , Frédéric Richardeau IEEE Electron Device Letters, 2019, 40 (5), pp.666-669. ⟨10.1109/led.2019.2896939⟩ Journal articles hal-02020275v1
	A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance Dany Hachem , David Trémouilles , Frédéric Morancho , Gaëtan Toulon Microelectronics Reliability, 2018, 88-90, pp.406-410. ⟨10.1016/j.microrel.2018.07.119⟩ Journal articles hal-01893190v1
	Analysis of heavily boron-doped diamond Raman spectrum V. Mortet , A. Taylor , Z. Vlčková Živcová , D. Machon , O. Frank Diamond and Related Materials, 2018, 88, pp.163-166. ⟨10.1016/j.diamond.2018.07.013⟩ Journal articles hal-01956849v1
	Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond Vincent Mortet , A. Taylor , M. Davydova , L. Fekete , Z. Vlčková Živcová MRS Advances, 2018, 3 (33), pp.1931-1935. ⟨10.1557/adv.2018.39⟩ Journal articles hal-01956851v1
	Characteristics of zirconium and niobium contacts on boron-doped diamond M. Davydova , A. Taylor , P. Hubík , L. Fekete , L. Klimša Diamond and Related Materials, 2018, 83, pp.184-189. ⟨10.1016/j.diamond.2018.02.009⟩ Journal articles hal-01956850v1
	Contribution to Silicon-Carbide-MESFET ESD robustness analysis Tanguy Phulpin , Karine Isoird , David Trémouilles , Patrick Austin , X. Perpinya IEEE Transactions on Device and Materials Reliability, 2018, 18 (2), pp.214-223. ⟨10.1109/TDMR.2018.2817255⟩ Journal articles hal-01740513v1
	New triggering-speed-characterization method for diode-triggered SCR using TLP Mouna Mahane , David Trémouilles , Marise Bafleur , Benjamin Thon , Marianne Diatta Microelectronics Reliability, 2017, 76-77, pp.692 - 697. ⟨10.1016/j.microrel.2017.07.063⟩ Journal articles hal-01643028v1
	Insight into boron-doped diamond Raman spectra characteristic features Vincent Mortet , Z. Vlčková Živcová , A. Taylor , O. Frank , P. Hubík Carbon, 2017, 115, pp.279 - 284. ⟨10.1016/j.carbon.2017.01.022⟩ Journal articles hal-01643027v1
	Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation François Boige , Frédéric Richardeau , David Trémouilles , Stéphane Lefebvre , G. Guibaud Microelectronics Reliability, 2017, 76-77, pp.500 - 506. ⟨10.1016/j.microrel.2017.06.085⟩ Journal articles hal-01643030v1
	Peculiarities of high electric field conduction in p-type diamond V. Mortet , David Trémouilles , J. Bulíř , P. Hubík , L. Heller Applied Physics Letters, 2016, 108 (15), pp.152106. ⟨10.1063/1.4946853⟩ Journal articles hal-01411427v1
	Optimization of a MOS–IGBT–SCR ESD protection component in smart power SOI technology Houssam Arbess , Marise Bafleur , David Trémouilles , Moustafa Zerarka Microelectronics Reliability, 2015, 55 (9-10), pp.1476-1480. ⟨10.1016/j.microrel.2015.06.138⟩ Journal articles hal-01238569v1
	Failure Analysis of ESD-stressed SiC MESFET Tanguy Phulpin , David Trémouilles , Karine Isoird , Dominique Tournier , Philippe Godignon Microelectronics Reliability, 2015, 55 (9-10), pp.1542-1548. ⟨10.1016/j.microrel.2015.06.121⟩ Journal articles hal-01176674v1
	Analysis of an ESD failure mechanism on a SiC MESFET Tanguy Phulpin , David Trémouilles , Karine Isoird , Dominique Tournier , Philippe Godignon Microelectronics Reliability, 2014, pp.MR11331. ⟨10.1016/j.microrel.2014.07.134⟩ Journal articles hal-01059962v1
	A System-Level Electrostatic-Discharge-Protection Modeling Methodology for Time-Domain Analysis Nicolas Monnereau , Fabrice Caignet , David Trémouilles , Nicolas Nolhier , Marise Bafleur IEEE Transactions on Electromagnetic Compatibility, 2013, 55 (1), pp.45-57. ⟨10.1109/TEMC.2012.2208973⟩ Journal articles hal-00941876v1
	Combined MOS-IGBT-SCR structure for a compact high-robustness ESD power clamp in smart power SOI technology Houssam Arbess , Marise Bafleur , David Trémouilles , Moustafa Zerarka IEEE Transactions on Device and Materials Reliability, 2013, 14 (1), pp. 432-440. ⟨10.1109/TDMR.2013.2281726⟩ Journal articles hal-00941891v1
	Investigation on statistical tools to analyze repetitive-electrostatic-discharge endurance of system-level protections Marianne Diatta , David Trémouilles , Emilien Bouyssou , Marise Bafleur IEEE Transactions on Device and Materials Reliability, 2012, 12 (4), pp.607--614. ⟨10.1109/TDMR.2012.2230093⟩ Journal articles hal-00787197v1
	Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness Marianne Diatta , David Trémouilles , Emilien Bouyssou , Raphaël Perdreau , Christine Anceau IEEE Transactions on Electron Devices, 2012, 59 (1), pp.108 - 113. ⟨10.1109/TED.2011.2173576⟩ Journal articles hal-00668818v1
	Investigation of Modeling System ESD Failure and Probability Using IBIS ESD Models Nicolas Monnereau , Fabrice Caignet , Nicolas Nolhier , Marise Bafleur , David Trémouilles IEEE Transactions on Device and Materials Reliability, 2012, 12 (4), pp.599-606. ⟨10.1109/TDMR.2012.2218605⟩ Journal articles hal-00941823v1
	An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices Jinyu Jason Ruan , Nicolas Monnereau , David Trémouilles , Nicolas Mauran , Fabio Coccetti IEEE Transactions on Instrumentation and Measurement, 2012, pp.456-461. ⟨10.1109/TIM.2011.2161937⟩ Journal articles hal-00668827v1
	Failure Mechanisms of Discrete Protection Device subjected to Repetitive ElectroStatic Discharges Marianne Diatta , Emilien Bouyssou , David Trémouilles , P. Martinez , F. Roqueta Microelectronics Reliability, 2009, 49 (9-11), pp.1103-1106. ⟨10.1016/j.microrel.2009.06.010⟩ Journal articles hal-00941812v1
	Size effects on varistor properties made from zinc oxide nanoparticles by low temperature spark plasma sintering Lena Saint Macary , Myrtil L. Kahn , Claude Estournès , Pierre Fau , David Trémouilles Advanced Functional Materials, 2009, 19 (11), p.1775-1783 Journal articles hal-00383348v2
	Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure Nicolas Guitard , Fabien Essely , David Trémouilles , Marise Bafleur , Nicolas Nolhier Microelectronics Reliability, 2005, 45 (9), pp.1415-1420 Journal articles hal-00397706v1
	Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization T. Beauchêne , D. Lewis , F. Beaudoin , V. Pouget , R. Desplats Microelectronics Reliability, 2003, 43 (3), pp.439 - 444. ⟨10.1016/S0026-2714(02)00339-6⟩ Journal articles hal-01887647v1
	Analysis and Compact Modeling of a Vertical Grounded-Base NPN Bipolar Transistor used as ESD Protection in a Smart Power Technology Géraldine Bertrand , Christelle Delage , Marise Bafleur , Nicolas Nolhier , Jean-Marie Dorkel IEEE Journal of Solid-State Circuits, 2001, 36 (9), pp.1373-1381 Journal articles hal-00143927v1

	Analysis of Failure Mechanisms Occuring at Breakdown Voltage in power p-GaN HEMT Lucien Ghizzo , David Trémouilles , Gérald Guibaud , Christophe de Nardi , Vanessa Chazal 31st edition of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2024), Jul 2024, Singapore (SG), Singapore Conference papers hal-04687318v1
	Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes L. Ghizzo , G. Guibaud , C. de Nardi , F. Jamin , V. Chazal 49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩ Conference papers hal-04307540v1
	Méthode de préconditionnement du HEMT GaN pour une mesure reproductible de Vth Lucien Ghizzo , David Trémouilles , Frédéric Richardeau SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France. https://sge2023.sciencesconf.org/resource/page/id/35 Conference papers hal-04157673v1
	Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment Ludovic Roche , David Trémouilles , Emmanuel Marcault , Corinne Alonso Workshop on Wide Bandgap Power Devices & Applications (WiPDA) 2023, Dec 2023, Charlotte (North Carolina), United States. ⟨10.1109/WiPDA58524.2023.10382216⟩ Conference papers hal-04239100v1
	Over-Voltage and Cross-Conduction Hard Switching Stress on Schottky Gate-Type p-GaN HEMT in Half-Bridge Operation Experimental and Physical Approaches [ESREF'23] Lucien Ghizzo , David Trémouilles , Frédéric Richardeau , Sébastien Vinnac , François Jamin 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115172⟩ Conference papers hal-04252379v1
	Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement Gaëtan Toulon , Cristina Miccoli , David Trémouilles , Frédéric Morancho , Maria-Eloisa Castagna WOCSDICE - EXMATEC 2023 6th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 2023, Palerme, Italy Conference papers hal-04128305v1
	Transmission Line Approach for the PCB Gate Interconnection Design in GaN-Based High-Frequency Power Converters Alonso Gutierrez Galeano , Emmanuel Marcault , Corinne Alonso , David Trémouilles PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2021, on line, France Conference papers hal-03370453v1
	Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter A Gutierrez , E Marcault , Corinne Alonso , David Trémouilles 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (virtuel), France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215645⟩ Conference papers hal-02987332v1
	Experimental Comparison of Discrete Cascode GaN-GaN and Single e-GaN in High-Frequency Power Converter A Gutierrez , E Marcault , Corinne Alonso , David Trémouilles PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Jul 2020, Nuremberg (Virtual), Germany Conference papers hal-02998007v1
	Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaN Chaymaa Haloui , Josiane Tasselli , Karine Isoird , David Trémouilles , Patrick Austin Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France Conference papers hal-02278808v1
	Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée Audrey Chapelle , Éric Frayssinet , Yvon Cordier , Yohann Spiegel , Leïla Benmosfeta Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5 Conference papers hal-02981903v2
	Variation de la résistance de contact métal/semi-conducteur dans une structure HEMT GaN sous illumination UV Dany Hachem , David Trémouilles , Frédéric Morancho , Gaëtan Toulon Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. 4p Conference papers hal-02981923v2
	Investigation on damaged planar-oxide of 1200V SiC Power Mosfets in non-destructive short-circuit operation François Boige , Frédéric Richardeau , D. Trémouilles , S. Lefebvre , G. Guibaud 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sept. 25-28, 2017, Bordeaux (FRANCE), 2017, Bordeaux, France Conference papers hal-03937651v1
	Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading Emmanuel Marcault , David Trémouilles , Karine Isoird , Frédéric Morancho , Mathieu Gavelle 18th European Conference on Power Electronics and Applications (EPE'2016), Sep 2016, Karlsruhe, Germany. ⟨10.1109/EPE.2016.7695492⟩ Conference papers hal-01556254v1
	Fiabilité de MESFET SiC face aux décharges électrostatiques Tanguy Phulpin , Karine Isoird , David Trémouilles , Patrick Austin , Javier Leon Symposium de Genie Electrique, Jun 2016, Grenoble, France Conference papers hal-01361658v1
	Robustesse de MESFET SiC face aux décharges électrostatiques Tanguy Phulpin , David Trémouilles , Karine Isoird , Patrick Austin , M Vellvehi SGE Symposium de Génie Electrique, Jun 2016, Grenoble, France Conference papers hal-01310299v1
	Mesure de résistance dynamique de HEMT en GaN à l'échelle de la centaine de nanosecondes Emmanuel Marcault , David Trémouilles , Karine Isoird , Gaëtan Toulon , Frédéric Morancho Symposium de Genie Electrique, Jun 2016, Grenoble, France Conference papers hal-01361669v1
	An Electrostatic-Discharge-Protection Solution for Silicon-Carbide MESFET Tanguy Phulpin , David Trémouilles , Karine Isoird , Dominique Tournier , Philippe Godignon EOS/ESD Symposium, Sep 2015, Reno, United States Conference papers hal-01178266v1
	Analyse du mécanisme d'un défaut ESD sur un MESFET en SiC Tanguy Phulpin , David Trémouilles , Karine Isoird , Dominique Tournier , Philippe Godignon Journées Nationales du Réseau de Doctorants en Microélectronique, Jun 2015, Bordeaux, France Conference papers hal-01339803v1
	Transient-TLP (T-TLP): a simple method for accurate ESD protection transient behavior measurement David Trémouilles , Antoine Delmas , Nicolas Mauran , Nicolas Nolhier , Houssam Arbess EOS/ESD Symposium, Sep 2013, LAS VEGAS, United States. pp.258-267 Conference papers hal-01056511v1
	Tackling the challenges of System level ESD: from efficient ICs ESD protection to system level predictive modeling Marise Bafleur , Fabrice Caignet , Nicolas Nolhier , David Trémouilles Taiwan ESD and Reliability Conference, Nov 2013, Hsinchu, Taiwan Conference papers hal-00957728v1
	Behavioral-Modeling Methodology to Predict Electrostatic-Discharge Susceptibility Failures at System Level : an IBIS Improvement Nicolas Monnereau , Fabrice Caignet , Nicolas Nolhier , David Trémouilles , Marise Bafleur Int. Symposium on Electromagnetic Compatibility (EMC Europe 2011), Sep 2011, YORK, United Kingdom. pp.457-463 Conference papers hal-00722643v1
	Life Cycle Assessment on a 765 kV Venezuelan Transmission System Wenlu Wang , David Trémouilles , Abderrahmane Beroual , Jean-Luc Bessède iREED, Mar 2011, Lille, France. pp.CD Conference papers hal-00765489v1
	High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power technology Houssam Arbess , David Trémouilles , Marise Bafleur Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD 2011), Sep 2011, ANAHEIM, United States. pp.1B.2-1B.8 Conference papers hal-00722642v1
	Advanced ESD power clamp design for SOI FinFET CMOS technology Steven Thijs , David Trémouilles , Dimitri Linten , Natarajan Mahadeva Iyer , Alessio Griffoni International Conference on IC Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.43-46, ⟨10.1109/ICICDT.2010.5510299⟩ Conference papers hal-00677458v1
	Accurate Transient Behavior Measurement of High- Voltage ESD Protections Based on a Very Fast Transmission-Line Pulse System Antoine Delmas , Nicolas Nolhier , David Trémouilles , Marise Bafleur , Nicolas Mauran 31st Electrical Overstress/Electrostatic Discharge Symposium, 2009. EOS/ESD Symposium, Aug 2009, ANAHEIM, United States. pp.165-172 Conference papers hal-00445676v1
	Pushing away the silicon limits of ESD protection structures: exploration of crystallographic orientation David Trémouilles , Yuan Gao , Marise Bafleur BIPOLAR/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2008, Monterey, United States. pp.200-203 Conference papers hal-00383353v1
	Different failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure Nicolas Guitard , Fabien Essely , David Trémouilles , Marise Bafleur , Nicolas Nolhier European Symposium on Reliability of Electron Devices, Failure Physics and analysis (ESREF), 2005, arcachon, France. pp.1415-1420 Conference papers hal-00401483v1
	ESD Induced Latent Defects In CMOS ICs And Reliability Impact Nicolas Guitard , David Trémouilles , Stéphane Alves , Marise Bafleur , Félix Beaudoin Electrical Overstress and Electrostatic Discharge (EOS/ESD) Symposium, Sep 2004, Dallas, United States. pp.174-181 Conference papers hal-00385694v1
	Design Guidelines to Achieve a Very High ESD Robustness in a Self-Biased NPN David Trémouilles , Géraldine Bertrand , Marise Bafleur , Nicolas Nolhier , Lionel Lescouzères Electrical Overstress and Electrostatic Discharge Symposium, Oct 2002, Charlotte, United States. pp.281-288 Conference papers hal-00383352v1

	Protection ESD pour MESFET SiC Tanguy Phulpin , Karine Isoird , David Trémouilles , Patrick Austin Journées Intégration et Systèmes de Puissance 3D (ISP3D), Mar 2015, Tours, France. 2015 Conference poster hal-01339804v1

	Parseval’s Theorem Used for the Inductor Analysis in High-Frequency Boost Converters A. Gutiérrez , Emmanuel Marcault , Corinne Alonso , Jean Paul Laur , David Trémouilles ELECTRIMACS 2019 Selected Papers, pp.347-362, 2020, 978-3-030-56970-9. ⟨10.1007/978-3-030-56970-9_26⟩ Book sections hal-03100915v1

	Driving of GaN HEMT Ludovic Roche , David Trémouilles , Emmanuel Marcault , Corinne Alonso 2022 Preprints, Working Papers, ... hal-03874986v1

	Optimisation et modélisation de protection intégrées contre les décharges électrostatique, par l'analyse de la physique mise en jeu David Trémouilles Micro et nanotechnologies/Microélectronique. INSA de Toulouse, 2004. Français. ⟨NNT : ⟩ Theses tel-00010263v1

David Trémouilles

Publications

Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements

New reliability model for power SiC MOSFET technologies under static and dynamic gate stress

Preconditioning of p-GaN power HEMT for reproducible V measurements

Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches

First results on 1.2 kV SiC MOSFET body diode robustness tests

Physical origin of the gate current surge during short-circuit operation of SiC MOSFET

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Analysis of heavily boron-doped diamond Raman spectrum

Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

Characteristics of zirconium and niobium contacts on boron-doped diamond

Contribution to Silicon-Carbide-MESFET ESD robustness analysis

New triggering-speed-characterization method for diode-triggered SCR using TLP

Insight into boron-doped diamond Raman spectra characteristic features

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Peculiarities of high electric field conduction in p-type diamond

Optimization of a MOS–IGBT–SCR ESD protection component in smart power SOI technology

Failure Analysis of ESD-stressed SiC MESFET

Analysis of an ESD failure mechanism on a SiC MESFET

A System-Level Electrostatic-Discharge-Protection Modeling Methodology for Time-Domain Analysis

Combined MOS-IGBT-SCR structure for a compact high-robustness ESD power clamp in smart power SOI technology

Investigation on statistical tools to analyze repetitive-electrostatic-discharge endurance of system-level protections

Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness

Investigation of Modeling System ESD Failure and Probability Using IBIS ESD Models

An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices

Failure Mechanisms of Discrete Protection Device subjected to Repetitive ElectroStatic Discharges

Size effects on varistor properties made from zinc oxide nanoparticles by low temperature spark plasma sintering

Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure

Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization

Analysis and Compact Modeling of a Vertical Grounded-Base NPN Bipolar Transistor used as ESD Protection in a Smart Power Technology

Analysis of Failure Mechanisms Occuring at Breakdown Voltage in power p-GaN HEMT

Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes

Méthode de préconditionnement du HEMT GaN pour une mesure reproductible de Vth

Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment

Over-Voltage and Cross-Conduction Hard Switching Stress on Schottky Gate-Type p-GaN HEMT in Half-Bridge Operation Experimental and Physical Approaches [ESREF'23]

Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement

Transmission Line Approach for the PCB Gate Interconnection Design in GaN-Based High-Frequency Power Converters

Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter

Experimental Comparison of Discrete Cascode GaN-GaN and Single e-GaN in High-Frequency Power Converter

Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaN

Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée

Variation de la résistance de contact métal/semi-conducteur dans une structure HEMT GaN sous illumination UV

Investigation on damaged planar-oxide of 1200V SiC Power Mosfets in non-destructive short-circuit operation

Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading

Fiabilité de MESFET SiC face aux décharges électrostatiques

Robustesse de MESFET SiC face aux décharges électrostatiques

Mesure de résistance dynamique de HEMT en GaN à l'échelle de la centaine de nanosecondes

An Electrostatic-Discharge-Protection Solution for Silicon-Carbide MESFET

Analyse du mécanisme d'un défaut ESD sur un MESFET en SiC

Transient-TLP (T-TLP): a simple method for accurate ESD protection transient behavior measurement

Tackling the challenges of System level ESD: from efficient ICs ESD protection to system level predictive modeling

Behavioral-Modeling Methodology to Predict Electrostatic-Discharge Susceptibility Failures at System Level : an IBIS Improvement

Life Cycle Assessment on a 765 kV Venezuelan Transmission System

High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power technology

Advanced ESD power clamp design for SOI FinFET CMOS technology

Accurate Transient Behavior Measurement of High- Voltage ESD Protections Based on a Very Fast Transmission-Line Pulse System

Pushing away the silicon limits of ESD protection structures: exploration of crystallographic orientation

Different failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure

ESD Induced Latent Defects In CMOS ICs And Reliability Impact

Design Guidelines to Achieve a Very High ESD Robustness in a Self-Biased NPN

Protection ESD pour MESFET SiC

Parseval’s Theorem Used for the Inductor Analysis in High-Frequency Boost Converters

Driving of GaN HEMT

Optimisation et modélisation de protection intégrées contre les décharges électrostatique, par l'analyse de la physique mise en jeu