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Didier Chaussende

162
Documents
Researcher identifiers

Presentation

- - Physical-chemistry of high temperature advanced materials, through the exploration of innovative crystal growth processes. - Special expertise on nitrides and carbides, wide bandgap semiconductors, MAX phases, diamond, using various synthesis processes from both the vapour phase and the liquid phase (CVD, MPCVD, CVT, PVT, LPE, TSSG ...).

Publications

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Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-ray-photoelectron spectroscopy

Jeremy Vives , Stephane Verdier , Fabien Deprat , Marvin Frauenrath , Romain Duru
Journal of Materials Chemistry C, 2023, 11 (26), pp.8935-8941. ⟨10.1039/D3TC01107K⟩
Journal articles hal-04270769v1
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Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

Xiaodong Shi , Yaoqin Lu , Didier Chaussende , Karsten Rottwitt , Haiyan Ou
Materials, 2023, 16 (6), pp.2324. ⟨10.3390/ma16062324⟩
Journal articles hal-04042276v1
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Evidence of twin mediated growth in the CVD of polycrystalline silicon carbide

Yann Gallou , Marie Dubois , Alexandre Potier , Didier Chaussende
Acta Materialia, 2023, 259, pp.119274. ⟨10.1016/j.actamat.2023.119274⟩
Journal articles hal-04272514v1
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Novel Photonic Applications of Silicon Carbide

Haiyan Ou , Xiaodong Shi , Yaoqin Lu , Manuel Kollmuss , Johannes Steiner
Materials, 2023, 16 (3), pp.1014. ⟨10.3390/ma16031014⟩
Journal articles hal-04042285v1
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A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Xinming Xing , Takeshi Yoshikawa , Olga Budenkova , Didier Chaussende
Journal of Materials Science, 2022, ⟨10.1007/s10853-021-06816-y⟩
Journal articles hal-03515056v1
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STUDY OF HEAT TRANSFER IN A NICKEL DROPLET IN ELECTROMAGNETIC LEVITATION

R Pons , A Gagnoud , D Chaussende , O Budenkova
Magnetohydrodynamics c/c of Magnitnaia Gidrodinamika, 2022, 58 (4), pp.483-490. ⟨10.22364/mhd.58.4.12⟩
Journal articles hal-04228617v1
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Substitutional Carbon Incorporation in SiGeC/Si Heterostructures: Influence of Silicon Precursors

Jérémy Vives , Fabien Deprat , Didier Dutartre , Justine Lespiaux , Romain Duru
ECS Transactions, 2022, 109 (4), pp.237-248. ⟨10.1149/10904.0237ecst⟩
Journal articles hal-04042448v1
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Design of a coil for electromagnetic levitation: comparison of numerical models and coil realization

Romain Pons , Annie Gagnoud , Didier Chaussende , Olga Budenkova
Magnetohydrodynamics c/c of Magnitnaia Gidrodinamika, 2022, 58 (1/2), pp.55-64. ⟨10.22364/mhd⟩
Journal articles hal-03739247v1

In Situ Interferometry for ppm-Order Solubility Analysis at High Temperatures: A Case Study of Carbon Solubility in Molten Silicon

Sakiko Kawanishi , Takeshi Yoshikawa , Didier Chaussende , Hiroyuki Shibata
Metallurgical and Materials Transactions B, 2021, 52 (4), pp.2619-2625. ⟨10.1007/s11663-021-02216-4⟩
Journal articles hal-03413082v1

Structural, Electronic and Vibrational Properties of Al4C3

Joseph Kioseoglou , Hoang‐long Le‐tran , Stefanos Giaremis , Isabelle Gelard , Thierry Ouisse
physica status solidi (b), 2019, 256 (10), pp.1900037. ⟨10.1002/pssb.201900037⟩
Journal articles hal-02366916v1
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Critical assessment and thermodynamic modeling of the Al–C system

G. Deffrennes , B. Gardiola , M. Allam , Didier Chaussende , A. Pisch
Calphad, 2019, 66, pp.101648. ⟨10.1016/j.calphad.2019.101648⟩
Journal articles hal-02366921v1

Understanding Al incorporation into 4H-SiC during epitaxy

Gabriel Ferro , Didier Chaussende , Nikolaos Tsavdaris
Journal of Crystal Growth, 2019, 507, pp.338-343. ⟨10.1016/j.jcrysgro.2018.11.034⟩
Journal articles hal-02121592v1

The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS

Sven Tengeler , Bernhard Kaiser , Gabriel Ferro , Didier Chaussende , Wolfram Jaegermann
Applied Surface Science, 2018, 427, pp.480 - 485. ⟨10.1016/j.apsusc.2017.08.220⟩
Journal articles hal-01615027v1

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4

Simon Forster , Didier Chaussende , Karol Kalna
ACS Applied Energy Materials, 2018, 2 (1), pp.715-720. ⟨10.1021/acsaem.8b01767⟩
Journal articles hal-02366910v1

(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

Sven Tengeler , Bernhard Kaiser , Didier Chaussende , Wolfram Jaegermann
Applied Surface Science, 2017, 400, pp.6 - 13. ⟨10.1016/j.apsusc.2016.12.136⟩
Journal articles hal-01620939v1
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Vaporization and condensation in the Al4C3-SiC system

Hoang-Long Le-Tran , Eirini Sarigiannidou , Isabelle Gelard , Didier Chaussende
Journal of the European Ceramic Society, 2017, 37 (15), pp.4475 - 4482. ⟨10.1016/j.jeurceramsoc.2017.05.038⟩
Journal articles hal-01620934v1

Al 4 SiC 4 vibrational properties: density functional theory calculations compared to Raman and infrared spectroscopy measurements

L. Pedesseau , O. Chaix-Pluchery , M. Modreanu , D. Chaussende , E. Sarigiannidou
Journal of Raman Spectroscopy, 2017, 48 (6), pp.891-896. ⟨10.1002/jrs.5128⟩
Journal articles hal-01485456v1
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A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy

Gabriel Ferro , Didier Chaussende
Scientific Reports, 2017, 7, pp.43069. ⟨10.1038/srep43069⟩
Journal articles hal-01615178v1

Conversion of MAX phase single crystals in highly porous carbides by high temperature chlorination

Shiqui Zhang , Lu Shi , Florian Mercier , O. Chaix-Pluchery , D. Chaussende
Ceramics International, 2017, 43 (11), pp.8246-8254. ⟨10.1016/j.ceramint.2017.03.153⟩
Journal articles hal-01762237v1

Undercooling measurement and nucleation study of silicon droplets on various substrates

M.G. Tsoutouva , T. Duffar , D. Chaussende , M. Kamguem
Journal of Crystal Growth, 2016
Journal articles hal-01464054v1

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

Kanaparin Ariyawong , Christian Chatillon , Elisabeth Blanquet , Jean-Marc Dedulle , Didier Chaussende
CrystEngComm, 2016, 18 (12), pp.2119-2124. ⟨10.1039/c5ce02480c⟩
Journal articles hal-01366561v1

Analysis of Macrostep Formation during Top Seeded Solution Growth of 4H-SiC

Kanaparin Ariyawong , Yun Ji Shin , Jean-Marc Dedulle , Didier Chaussende
Crystal Growth & Design, 2016, 16 (6), pp.3231-3236. ⟨10.1021/acs.cgd.6b00155⟩
Journal articles hal-01456078v1

Photoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of Growth

Gediminas Liaugaudas , Donatas Dargis , Kestutis Jarašiunas , Nikolaos Tsavdaris , Eirini Sarigiannidou
Materials Science Forum, 2015, 821-823, pp.253-256
Journal articles hal-02012973v1

Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

Laurent Pedesseau , Jacky Even , Mircea Modreanu , Didier Chaussende , Erini Sarigiannidou
APL Materials, 2015, 3 (12), pp.121101. ⟨10.1063/1.4936667⟩
Journal articles hal-01236491v1

Magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals and application to the M n + 1 A X n phases

T. Ouisse , L. Shi , B. Piot , B. Hackens , V. Mauchamp
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 92 (4)
Journal articles hal-01986020v1

Synthesis and Characterization of Al4SiC4: A “New” Wide Band Gap Semiconductor Material

Dimitrios Zevgitis , Odette Chaix-Pluchery , Béatrice Doisneau , Mircea Modreanu , Joseph La Manna
Materials Science Forum, 2015, 821-823, pp.974-977
Journal articles hal-02012987v1
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Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

K. Alassaad , M. Vivona , V. Soulière , B. Doisneau , F. Cauwet
ECS Journal of Solid State Science and Technology, 2014, 3 (8), pp.P285 - P292. ⟨10.1149/2.0121408jss⟩
Journal articles hal-01615319v1

Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

Xiaojian Li , H. Jacobson , Alexandre Boulle , D. Chaussende , A. Henry
ECS Journal of Solid State Science and Technology, 2014, 3 (4), pp.P75-P81. ⟨10.1149/2.012404jss⟩
Journal articles hal-01226019v1

Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT

Kanaparin Ariyawong , Elisabeth Blanquet , Jean Marc Dedulle , Thierry Ouisse , Didier Chaussende
Materials Science Forum, 2014, 778-780, pp.778-780. ⟨10.4028/www.scientific.net/MSF.778-780.35⟩
Journal articles hal-01122442v1

Spiral step dissociation on PVT grown SiC crystals

Martin Seiss , Thierry Ouisse , Didier Chaussende
Materials Science Forum, 2014, Vols. 778-780, pp.39-42. ⟨10.4028/www.scientific.net/MSF.778-780.39⟩
Journal articles hal-01067413v1

Open Issues in SiC Bulk Growth

Jean-Marc Dedulle , Didier Chaussende , Kanaparin Ariyawong , Nikolaos Tsavdaris , Martin Seiss
Materials Science Forum, 2014, 778-780 (6), pp.3-8
Journal articles hal-02012866v1

Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal

Gediminas Liaugaudas , Kestutis Jarašiunas , Nikolaos Tsavdaris , Eirini Sarigiannidou , Didier Chaussende
Materials Science Forum, 2014, 806, pp.65-69
Journal articles hal-02012974v1

Synthesis of single crystals of V2AlC phase by high-temperature solution growth and slow cooling technique

Lu Shi , T. Ouisse , E. Sarigiannidou , O. Chaix-Pluchery , H. Roussel
Acta Materialia, 2014, 83, pp.304-309. ⟨10.1016/j.actamat.2014.10.018⟩
Journal articles hal-01226018v1

Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC

Nikolaos Tsavdaris , Kanaparin Ariyawong , Eirini Sarigiannidou , Jean Marc Dedulle , Odette Chaix-Pluchery
Materials Science Forum, 2014, 806, pp.61-64. ⟨10.4028/www.scientific.net/MSF.806.61⟩
Journal articles hal-02012985v1

Birefringence Microscopy of Unit Dislocations in Diamond

L. T. M. Hoa , T. Ouisse , D. Chaussende , M. Naamoun , A. Tallaire
Crystal Growth & Design, 2014, 14 (11), pp.5761-5766. ⟨10.1021/cg5010193⟩
Journal articles hal-01226020v1

Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation

Nikolaos Tsavdaris , Kanaparin Ariyawong , Odette Chaix-Pluchery , Jean Marc Dedulle , Eirini Sarigiannidou
Materials Science Forum, 2014, 778-780, pp.13-16. ⟨10.4028/www.scientific.net/MSF.778-780.13⟩
Journal articles hal-02012874v1

Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide

Nikolaos Tsavdaris , Kanaparin Ariyawong , Jean-Marc Dedulle , Eirini Sarigiannidou , Didier Chaussende
Crystal Growth & Design, 2014, 15 (1), pp.156-163
Journal articles hal-02012984v1

On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates

Gediminas Liaugaudas , Kestutis Jarašiunas , Nikolaos Tsavdaris , Eirini Sarigiannidou , Didier Chaussende
Materials Science Forum, 2014, 778-780, pp.305-308
Journal articles hal-02012879v1

High temperature solution growth and characterization of Cr2AlC single crystals

T. Ouisse , E. Sarigiannidou , O. Chaix-Pluchery , Hervé Roussel , B. Doisneau
Journal of Crystal Growth, 2013, 384, pp.88-95. ⟨10.1016/j.jcrysgro.2013.09.021⟩
Journal articles hal-01067401v1

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

C. Coletti , S. Forti , A. Principi , K. V. Emtsev , A. A. Zakharov
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88 (15), pp.155439. ⟨10.1103/PhysRevB.88.155439⟩
Journal articles hal-01067356v1
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Epitaxial graphene morphologies probed by weak (anti)-localization

Ather Mahmood , Cécile Naud , Clément Bouvier , Fanny Hiebel , Pierre Mallet
Journal of Applied Physics, 2013, 113 (8), pp.083715. ⟨10.1063/1.4793591⟩
Journal articles hal-00705711v2
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Polytypic transformations in SiC : diuse X-ray scattering and Monte Carlo simulations

Alexandre Boulle , D. Dompoint , I. Galben-Sandulache , D. Chaussende
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88 (2), ⟨10.1103/PhysRevB.88.024103⟩
Journal articles hal-02193723v1

Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals

Martin Seiss , T. Ouisse , D. Chaussende
Journal of Crystal Growth, 2013, 384, pp.129-134. ⟨10.1016/j.jcrysgro.2013.09.022⟩
Journal articles hal-01067412v1

3C-SiC heteroepitaxy on hexagonal SiC substrates

A. Henry , Xiaojian Li , H. Jacobson , S. Andersson , Alexandre Boulle
Materials Science Forum, 2013, Volumes 740 - 742 (Chapter 4: Epitaxial Growth 3C SiC), pp.267-270. ⟨10.4028/www.scientific.net/MSF.740-742.267⟩
Journal articles hal-00945824v1
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Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

A. Debelle , M. Backman , L. Thome , W. Weber , M. Toulemonde
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (10), ⟨10.1103/PhysRevB.86.100102⟩
Journal articles hal-02193726v1
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On the stability of 3C-SiC single crystals at high temperatures

Deborah Dompoint , Irina Galben-Sandulache , Alexandre Boulle , Didier Chaussende , Dominique Eyidi
Materials Science Forum, 2012, 717-720, pp.493-496. ⟨10.4028/www.scientific.net/MSF.717-720.493⟩
Journal articles hal-02193762v1

Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma.

J.H Choi. , L. Latu-Romain. , F. Dhalluin. , T. Chevolleau. , B. Salem
Materials Science Forum, 2012, 711, pp. 66-69
Journal articles hal-00762143v1

Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent

J. Lefebure , J. M. Dedulle , T. Ouisse , D. Chaussende
Crystal Growth & Design, 2012, 12 (2), pp.909-913. ⟨10.1021/cg201343w⟩
Journal articles hal-01067388v1

Application of an axial next-nearest-neighbor Ising model to the description of Mn+1AXn phases

T. Ouisse , D. Chaussende
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85 (10), pp.104110. ⟨10.1103/PhysRevB.85.104110⟩
Journal articles hal-01067399v1
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Diffuse X-ray scattering from partially transformed 3C-SiC single crystals

D. Dompoint , Alexandre Boulle , I.G. Galben-Sandulache , D. Chaussende
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 284, pp.19-22. ⟨10.1016/j.nimb.2011.09.008⟩
Journal articles hal-02193739v1

Critical assessment of birefringence imaging of dislocations in 6H silicon carbide

L. T. M. Hoa , T. Ouisse , D. Chaussende
Journal of Crystal Growth, 2012, 354 (1), pp.202-207. ⟨10.1016/j.jcrysgro.2012.06.009⟩
Journal articles hal-01067372v1

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

C. Coletti , K. V. Emtsev , A. A. Zakharov , T. Ouisse , D. Chaussende
Applied Physics Letters, 2011, 99 (8), pp.081904. ⟨10.1063/1.3618674⟩
Journal articles hal-01067355v1

Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

A. Claudel , E. Blanquet , D. Chaussende , R. Boichot , Roland Martin
Journal of The Electrochemical Society, 2011, 158 (3), pp.H328-H332. ⟨10.1149/1.3536477⟩
Journal articles hal-00640123v1

Raman scattering from Ti3SiC2 single crystals

Florian Mercier , O. Chaix-Pluchery , T. Ouisse , D. Chaussende
Applied Physics Letters, 2011, 98 (8), pp.081912. ⟨10.1063/1.3558919⟩
Journal articles hal-01067392v1

Morphological instabilities induced by foreign particles and Ehrlich-Schwoebel effect during the two-dimensional growth of crystalline Ti3SiC2

Florian Mercier , T. Ouisse , D. Chaussende
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (7), pp.075411. ⟨10.1103/PhysRevB.83.075411⟩
Journal articles hal-01067393v1

Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system

K. Seki , A. Alexander , S. Kozawa , T. Ujihara , Patrick Chaudouet
Journal of Crystal Growth, 2011, 335 (1), pp.94-99. ⟨10.1016/j.jcrysgro.2011.09.004⟩
Journal articles hal-01067466v1

Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD).

A. Claudel , Y. Chowanek , E. Blanquet , D. Chaussende , R. Boichot
physica status solidi (c), 2011, 8 (7-8), pp.2019-2021
Journal articles hal-00692267v1

From Si nanowire to SiC nanotube

L. Latu-Romain , M. Ollivier , A. Mantoux , G. Auvert , O. Chaix-Pluchery
Journal of Nanoparticle Research, 2011, 13 (10), pp.5425-5433. ⟨10.1007/s11051-011-0530-9⟩
Journal articles hal-00629242v1

Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process.

A. Claudel , E. Blanquet , D. Chaussende , R. Boichot , B. Doisneau
Journal of Crystal Growth, 2011, 335 (1), pp.17-24. ⟨10.1016/j.jcrysgro.2011.09.018⟩
Journal articles hal-00664176v1
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Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: a diuse X-ray scattering study

D. Dompoint , Alexandre Boulle , I. Galben-Sandulache , D. Chaussende , L. T M Hoa
Journal of Applied Physics, 2011, 110 (5), pp.053508. ⟨10.1063/1.3627371⟩
Journal articles hal-02193765v1
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Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals

A. Debelle , L. Thome , D Dompoint , Alexandre Boulle , F. Garrido
Journal of Physics D: Applied Physics, 2010, 43 (45), pp.455408. ⟨10.1088/0022-3727/43/45/455408⟩
Journal articles hal-02193735v1

Evolution of 3C-SiC islands nucleated from a liquid phase on Si face alpha-SiC substrates

O. Kim-Hak , G. Ferro , J. Lorenzzi , D. Carole , J. Dazord
Thin Solid Films, 2010, 518 (15), pp.4234-4241. ⟨10.1016/j.tsf.2009.12.086⟩
Journal articles hal-01067377v1

Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth

Frédéric Mercier , Jean-Marc Dedulle , Didier Chaussende , Michel Pons
Journal of Crystal Growth, 2010, 312 (2), pp.155-163. ⟨10.1016/j.jcrysgro.2009.10.007⟩
Journal articles hal-00466813v1

Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase

Olivier Kim-Hak , Jean Lorenzzi , Nikoletta Jegenyes , Gabriel Ferro , Davy Carole
Materials Science Forum, 2010, 645-648, pp.163-166. ⟨10.4028/www.scientific.net/MSF.645-648.163⟩
Journal articles hal-02735381v1
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Quantitative analysis of diffuse X-ray scattering in partially transformed 3C-SiC single crystals

Alexandre Boulle , D. Dompoint , I. Galben-Sandulache , D. Chaussende
Journal of Applied Crystallography, 2010, 43 (4), pp.867-875. ⟨10.1107/S0021889810019412⟩
Journal articles hal-02193826v1

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Frédéric Mercier , Irina G. Galben-Sandulache , Maya Marinova , Georgios Zoulis , Thierry Ouisse
Materials Science Forum, 2010, Materials Science Forum, 645-648, pp.59-62. ⟨10.4028/www.scientific.net/MSF.645-648.59⟩
Journal articles hal-02510365v1

Micropipe-induced birefringence in 6H silicon carbide

T. Ouisse , D. Chaussende , L. Auvray
Journal of Applied Crystallography, 2010, 43, pp.122-133. ⟨10.1107/s0021889809043957⟩
Journal articles hal-01067400v1

A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates

M. Marinoya , Florian Mercier , A. Mantzari , I. Galben , D. Chaussende
Physica B: Condensed Matter, 2009, 404 (23-24), pp.4749-4751. ⟨10.1016/j.physb.2009.08.190⟩
Journal articles hal-01067391v1

Growth of thick AIN layers by high temperature CVD ('HTCVD)

A. Claudel , E. Blanquet , D. Chaussende , M. Audier , D. Pique
Materials Science Forum, 2009, 600-603, pp.1269-1272
Journal articles hal-00389378v1

Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate

O. Kim-Hak , G. Ferro , J. Dazord , M. Marinova , J. Lorenzzi
Journal of Crystal Growth, 2009, 311 (8), pp.2385-2390. ⟨10.1016/j.jcrysgro.2009.01.132⟩
Journal articles hal-01067376v1

Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD)

E. Blanquet , D. Chaussende , A. Claudel , D. Pique , M. Pons
physica status solidi (c), 2009, 6, pp.S348-S351
Journal articles hal-00432756v1

Silicon Carbide growth : C/Si ratio Evaluation and Modeling

M. Pons , S.I. Nishizawa , P. Wellmann , E. Blanquet , D. Chaussende
Materials Science Forum, 2009, 600-603, pp.83-88
Journal articles hal-00389369v1

Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy

D. Chaussende , Florian Mercier , R. Madar , M. Pons
Materials Science Forum, 2009, 600-603, pp.71-74
Journal articles hal-00374734v1
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The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering

Alexandre Boulle , J. Aubé , I. Galben-Sandulache , D. Chaussende
Applied Physics Letters, 2009, 94 (20), pp.201904. ⟨10.1063/1.3141509⟩
Journal articles hal-02190246v1

High-speed growth and characterization of polycrystalline AlN layers by High temperature Chemical Vapor Deposition (HTCVD).

A. Claudel , E. Blanquet , D. Chaussende , Roland Martin , D. Pique
ECS Transactions, 2009, 25 (8), pp.323-326
Journal articles hal-00457445v1
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Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

A. Claudel , E. Blanquet , D. Chaussende , M. Audier , D. Pique
Journal of Crystal Growth, 2009, 311 (13), pp.3371-3379. ⟨10.1016/j.jcrysgro.2009.03.053⟩
Journal articles hal-00408487v1
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Prospects for 3C-SiC bulk crystal growth

Didier Chaussende , Frédéric J. Mercier , Alexandre Boulle , Florine Conchon , Maher Soueidan
Journal of Crystal Growth, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩
Journal articles hal-00174181v1
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Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering

Alexandre Boulle , D. Chaussende , F. Conchon , G. Ferro , O. Masson
Journal of Crystal Growth, 2008, 310 (5), pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩
Journal articles hal-02193853v1

Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering

Alexandre Boulle , D. Chaussende , F. Pecqueux , Florine Conchon , L. Latu-Romain
physica status solidi (a), 2007, 204 (8), pp.2528-2534. ⟨10.1002/pssa.200675652⟩
Journal articles hal-00176514v1

Status of SiC bulk growth process

Didier Chaussende , Peter Wellmann , Michel Pons
Journal of Physics D: Applied Physics, 2007, 20 (20), pp.6150-6158. ⟨10.1088/0022-3727/40/20/S02⟩
Journal articles hal-00114194v1

High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

G. Chichignoud , M. Pons , E. Blanquet , D. Chaussende , M. Anikin
Surface and Coatings Technology, 2006, 201 (7), pp.4014-4020
Journal articles hal-00141052v1

Characterization of a 3C-SiC single domain grown on 6H-SiC(0001) by a vapor-liquid-solid mechanism

Maher Soueidan , Gabriel Ferro , B. Nsouli , Mohamad Roumie , Efsthatios Polychroniadis
Crystal Growth & Design, 2006, 6 (11), pp.2598-2602. ⟨10.1021/cg0603523⟩
Journal articles hal-00389882v1

Characterization of bulk <111> 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

L. Latu-Romain , D. Chaussende , C. Balloud , S. Juillaguet , L. Rapenne
Silicon carbide and related materials, 2006, pp.527-529 / 99-102
Journal articles hal-00394389v1

Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process

Didier Chaussende , Elisabeth Blanquet , Francis Baillet , Magali Ucar , Guy Chichignoud
Chemical Vapor Deposition, 2006, 12 (8-9), pp.541-548. ⟨10.1002/cvde.200606471⟩
Journal articles hal-00118819v1

High temperature nucleation of cubic silicon carbide on (0001) hexagonal SiC nominal surfaces

L. Latu-Romain , D. Chaussende , M. Pons
Crystal Growth & Design, 2006, 6 (12), pp.2788-2794
Journal articles hal-00141565v1

High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces

Laurence Latu-Romain , Didier Chaussende , Michel Pons
Crystal Growth & Design, 2006, 6 (12), pp.2788-2794. ⟨10.1021/cg060420l⟩
Journal articles hal-00133832v1
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X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals

Alexandre Boulle , D. Chaussende , L. Latu-Romain , F. Conchon , O. Masson
Applied Physics Letters, 2006, 89 (9), pp.091902. ⟨10.1063/1.2338787⟩
Journal articles hal-02193856v1

Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications

Didier Chaussende , Magali Ucar , Laurent Auvray , Francis Baillet , Michel Pons
Crystal Growth & Design, 2005, 5 (4), pp.1539-1544. ⟨10.1021/cg050009i⟩
Journal articles hal-00118809v1

Study of 3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces by the CF-PVT method

Laurence Latu-Romain , Didier Chaussende , Patrick Chaudouët , Florence Robaut , Gregory Berthomé
Journal of Crystal Growth, 2005, 275, pp.e609-e613. ⟨10.1016/j.jcrysgro.2004.11.005⟩
Journal articles hal-00188007v1

Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method

Didier Chaussende , Carole Balloud , Laurent Auvray , Francis Baillet , Marcin Zielinski
Materials Science Forum, 2004, 457-460, pp. 91-94. ⟨10.4028/0-87849-943-1.91⟩
Journal articles hal-00417942v1

Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

Etienne Pernot , I. El Harrouni , Michel Mermoux , Jean-Marie Bluet , Mikhail Anikin
Materials Science Forum, 2003, 433-436, pp. 265-268. ⟨10.4028/www.scientific.net/MSF.433-436.265⟩
Journal articles hal-00418043v1

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Michel Pons , Francis Baillet , Elisabeth Blanquet , Etienne Pernot , Roland Madar
Applied Surface Science, 2003, 212-213, pp.177-183. ⟨10.1016/S0169-4332(03)00064-3⟩
Journal articles hal-00187935v1

SiC Homoepitaxial Growth at Low Temperature by Vapor-Liquid-Solid Mechanism in Al-Si Melt

Christophe Jacquier , Gabriel Ferro , François Cauwet , Didier Chaussende , Yves Monteil
Crystal Growth & Design, 2003, 3 (3), pp.285-287. ⟨10.1021/cg0256069⟩
Journal articles hal-00187892v1

Continuous Feed Physical Vapor Transport : Toward High Purity and Long Boule Growth of SiC

Didier Chaussende , Francis Baillet , Ludovic Charpentier , Etienne Pernot , Michel Pons
Journal of The Electrochemical Society, 2003, 150 (10), pp.G653-G657. ⟨10.1149/1.1606689⟩
Journal articles hal-00187159v1

Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

Didier Chaussende , Gabriel Ferro , Yves Monteil
Journal of Crystal Growth, 2002, 234, pp.63-69
Journal articles hal-00187136v1

A comprehensive study of SiC growth processes in a VPE reactor

Thierry Chassagne , Gabriel Ferro , Didier Chaussende , François Cauwet , Yves Monteil
Thin Solid Films, 2002, 402, pp.83-89
Journal articles hal-00187126v1

Study of the interaction between graphite and Al-Si melts for the growth of crystalline silicon carbide

Christophe Jacquier , Didier Chaussende , Gabriel Ferro , Jean-Claude Viala , François Cauwet
Journal of Materials Science, 2002, 37, pp.3299-3306
Journal articles hal-00187149v1

Single atomic steps on SiC polished surfaces

Patrice Vicente , Didier Chaussende
III-Vs Review, 2002, 15 (4), pp.46-47
Journal articles hal-00187897v1

Thermochemistry of silicon carbide growth by chemical transport reactions

Didier Chaussende , Gabriel Ferro , Yves Monteil , Christian Brylinski , Jean Bouix
Journal of Materials Science, 2001, 36, pp.335-342
Journal articles hal-00186942v1

Thermodynamical calculations on the chemical vapor transport of silicon carbide

Didier Chaussende , Yves Monteil , Patrick Aboughe-Nze , Christian Brylinski , Jean Bouix
Materials Science and Engineering: B, 1999, 61-62, pp.98-101
Journal articles hal-00186935v1

Role of SIMOX defects on the structural properties of b-SiC:SIMOX

Gabriel Ferro , Nicolas Planes , Victoria Papaioannou , Didier Chaussende , Yves Monteil
Materials Science and Engineering: B, 1999, 61-62, pp.586-592
Journal articles hal-00186941v1
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Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al

Gabriel Ferro , Didier Chaussende
18th International Conference on Silicon Carbide and Related Materials (ICSCRM 2019), Sep 2019, Kyoto, Japan. pp.96-101, ⟨10.4028/www.scientific.net/MSF.1004.96⟩
Conference papers hal-02990885v1

Sublimation growth of a new promising semiconductor Al4SiC4

Hoang-Long Le Tran , Eirini Sarigiannidou , Odette Chaix-Pluchery , Isabelle Gélard , Thierry Ouisse
E- MRS Spring, May 2017, Strasbourg, France
Conference papers hal-02112233v1

Optical properties of wide band gap Al4SiC4: experimental and theoretical approaches

Laurent Pedesseau , Jacky Even , Olivier Durand , Mircea Modreanu , D. Chaussende
European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Conference papers hal-01162159v1

Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC

D. Chaussende , L. Parent-Bert , Y.J. Shin , T. Ouisse , T. Yoshikawa
16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Giardinin Naxos, Italy
Conference papers hal-02016972v1

Top seeded solution growth of 4H - SiC single crystal using graphite block with rough surface

Ji-Young Yoon , Byeong Geun Kim , Ji-Eun Lee , Myung -Hyun Lee , Won- Seon Seo
International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy
Conference papers hal-02016964v1

Wide optical band gap Al4SiC4

Laurent Pedesseau , Jacky Even , Olivier Durand , Mircea Modreanu , Didier Chaussende
European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Conference papers hal-01203372v1

Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solvents

Yun Ji Shin , Beatrice Doisneau , Kanaparin Ariyawong , Pierre Brosselard , Didier Chaussende
International conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩
Conference papers hal-02016968v1

Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC

Didier Chaussende , L. Parent-Bert , Yj Shin , Thierry Ouisse , T. Yoshikawa
16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Giardini Naxos, Italy
Conference papers hal-02016977v1

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

Nikolaos Tsavdaris , Pawel Kwasnicki , Kanaparin Ariyawong , Nathalie Valle , Herve Peyre
ECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩
Conference papers hal-01936649v1

Ge assisted SiC epitaxial growth by CVD on SiC substrate

Kassem Alassaad , Véronique Soulière , Beatrice Doisneau , François Cauwet , Hervé Peyre
15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩
Conference papers hal-02025422v1

Experimental study of defect recovery induced by swift heavy ions in 6H-SiC and 3C-SiC

A. Debelle , Alexandre Boulle , L. Thome , F. Garrido , M. Backman
MRS 2012 Spring Meeting, Apr 2012, San Francisco, United States
Conference papers hal-00952235v1

Growth of Ti3SiC2 single crystals

Didier Chaussende , Thierry Ouisse
36th International Conference and Expo on Advanced Ceramics and Composites, Jan 2012, Daytona Beach (Floride), United States
Conference papers hal-00672082v1

3C-SiC heteroepitaxy on hexagonal SiC substrates

A. Henry , Xiaojian Li , H. Jacobson , S. Andersson , Alexandre Boulle
European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2012, Saint Petersburg, Russia
Conference papers hal-00944202v1

Etude structurale des dislocations dans les polytypes 4H et 3C de SiC

J.L. Demenet , A. Madyan , J. Rabier , C. Tromas , D. Eyidi
Journées Plénières du GnR Matinex 2011, Feb 2012, Lyon, France
Conference papers hal-00952203v1

Diffuse X-Ray scattering and Monte Carlo studies of spatially correlated stacking faults in SiC

Alexandre Boulle , Deborah Dompoint , I. Galben Sandulache , D. Chaussende
2012 MRS Fall Meeting & Exhibit, Nov 2012, Boston, United States
Conference papers hal-00952309v1

SiC bulk growth processes: achievements and next challenges

Didier Chaussende
2nd Annual Meeting of the SiC Research Community in Korea, Nov 2011, Seoul, South Korea
Conference papers hal-00672069v1

SiC and AlN growth processing : experiments and simulation.

M. Pons , D. Chaussende , J.M. Dedulle , R. Boichot , E. Blanquet
International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Conference papers hal-00692283v1

Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication.

E. Blanquet (invitée) , A. Claudel , V. Brizé , R. Boichot , D. Chaussende
International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Conference papers hal-00692280v1

Recent advances on SiC bulk growth processes

Didier Chaussende
Confidential, Nov 2011, Pohang, South Korea
Conference papers hal-00672078v1

Initiation d'une " filière nitrures à grand gap " : croissance et caractérisation de cristaux massifs d'AlN pour les applications optoélectroniques

Didier Chaussende
Journée Recherche de Grenoble INP, Feb 2011, Grenoble, France
Conference papers hal-00672062v1

Defects and polytypism in SiC : the role of diffuse X-ray scattering

Alexandre Boulle , Deborah Dompoint , I. Galben-Sandulache , D. Chaussende
E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩
Conference papers hal-00686902v1

Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronics

M. Pons , S. Nishizawa , E. Blanquet , R. Boichot , D. Chaussende
Renewable Energy 2010, Jun 2010, Yokohama, Japan
Conference papers hal-00502036v1

Overview of SiC bulk growth processes

D. Chaussende
Confidential, Dec 2010, Amagasaki, Japan
Conference papers hal-00672047v1

Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scattering

Deborah Dompoint , Alexandre Boulle , I.G. Galben-Sandulache , D. Chaussende
E-MRS, Jun 2010, Strasbourg, France. pp.71-74, ⟨10.1063/1.3518314⟩
Conference papers hal-00686913v1
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Defects and Polytypism in SiC: The Role of Diffuse X-Ray Scattering

Alexandre Boulle , D. Dompoint , I. Galben-Sandulache , D. Chaussende
2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩
Conference papers hal-02193824v1

SiC bulk growth technologies

Didier Chaussende
Winter School on Growth and epitaxy, Jan 2010, Linköping, Sweden
Conference papers hal-00671985v1

Vapor Phase vs. Liquid Phase: What is the Best Choice for the Growth of Bulk 3C-SiC Crystals?

D. Chaussende
European Materials Research Society (E-MRS) Spring meeting, Jun 2010, Strasbourg, France
Conference papers hal-00672043v1

Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC

Maya Marinova , Georgios Zoulis , Teddy Robert , Frederic Mercier , Alkioni Mantzari
25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730
Conference papers hal-00543681v1

Cristallogenèse des semi-conducteurs à grand gap : contexte et enjeux

D. Chaussende
Les Midis MINATEC, Jun 2009, Grenoble, France
Conference papers hal-00671980v1

Study of the spontaneous nucleation of 3C-SiC single crystals using CF-PVT technique

I.G. Galben-Sandulache , G.L. Sun , J.M. Dedulle , T. Ouisse , R. Madar
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.55-58, ⟨10.4028/www.scientific.net/MSF.645-648.55⟩
Conference papers hal-00517395v1

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the seeded growth of 3C-SiC Crystals

G.L. Sun , I.G. Galben-Sandulache , T. Ouisse , J.M. Dedulle , M. Pons
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.63-66, ⟨10.4028/www.scientific.net/MSF.645-648.63⟩
Conference papers hal-00517405v1
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Top Seeded Solution Growth of 3C-SiC single crystals

Frédéric Mercier , Didier Chaussende , Jean-Marc Dedulle , Michel Pons , Roland Madar
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.41-44, ⟨10.4028/www.scientific.net/MSF.615-617.41⟩
Conference papers hal-00426587v1

Dislocation-Induced Birefringence in Silicon Carbide

Thierry Ouisse , Didier Chaussende , Laurent Auvray , Etienne Pernot , Roland Madar
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.271-274, ⟨10.4028/www.scientific.net/MSF.615-617.271⟩
Conference papers hal-02890909v1

Characterization of stacking faults in thick 3C-SiC crystals using high resolution diffuse X-ray scattering

Alexandre Boulle , D. Chaussende , Florine Conchon , Florian Mercier , G. Ferro
E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2008, Strasbourg, France
Conference papers hal-00285929v1

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

J. Eid , I.-G. Galben , G. Zoulis , Teddy Robert , D. Chaussende
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48
Conference papers hal-00390466v1
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Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

Didier Chaussende , Jessica Eid , Frédéric Mercier , Roland Madar , Michel Pons
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.31-36, ⟨10.4028/www.scientific.net/MSF.615-617.31⟩
Conference papers hal-00389062v1

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)

A. Claudel , D. Chaussende , E. Blanquet , D. Pique , M. Pons
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.987-990
Conference papers hal-00426590v1

Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering

Alexandre Boulle , D. Chaussende , Florine Conchon , G. Ferro , Olivier Masson
International Workshop on 3C-SiC Heteroepitaxy (HeteroSiC 07), Jun 2007, Grenoble, France
Conference papers hal-00286549v1

Preliminary study of 3C-SiC growth from high temperature solution

Florian Mercier , D. Chaussende , J.M. Dedulle , M. Pons
Hetero'SiC'07, 2007, France. pp.2
Conference papers hal-00196665v1

Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling

M. Pons , S. Nishizawa , P. Wellmann , E. Blanquet , D. Chaussende
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88
Conference papers hal-00173481v1

Growth of thick AlN layers by High Temperature CVD

A. Claudel , E. Blanquet , D. Chaussende , M. Audier , D. Pique
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Otsu, Japan. pp.1269-1272
Conference papers hal-00337372v1
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Croissance de semi-conducteurs à grand gap

Jean-Marc Dedulle , Didier Chaussende , Romain Madar , Michel Pons , Elisabeth Blanquet
CFM 2007 - 18ème Congrès Français de Mécanique, Aug 2007, Grenoble, France
Conference papers hal-03360397v1

Prospects for 3C-SiC bulk crystal growth

D. Chaussende , Florian Mercier , Alexandre Boulle , Florine Conchon , M. Soueidan
E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France
Conference papers hal-00285924v1

Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy

Florian Mercier , D. Chaussende , R. Madar , M. Pons
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.71-74
Conference papers hal-00337375v1

Modeling of 3C-SiC Single Crystal Growth

J.M. Dedulle , Florian Mercier , D. Chaussende , M. Pons
Conférence européenne COMSOL, 2007, France. pp.8
Conference papers hal-00196662v1

Modèle de champ de phase pour la croissance cristalline

J.M. Dedulle , D. Chaussende , M. Pons , R. Madar
MATERIAUX 2006, 2006, France. pp.10
Conference papers hal-00196658v1

High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

G. Chichignoud , M. Pons , E. Blanquet , D. Chaussende , M. Anikin
International Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States
Conference papers hal-00149073v1

Gas fed top-seeded solution growth of silicon carbide

Didier Chaussende , Roland Madar , Michel Pons
2006, pp.111-114
Conference papers hal-00133834v1

High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modeling

E. Blanquet , D. Chaussende , S. Nishizawa , M. Pons
European conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20
Conference papers hal-00141097v1

SiC growth : evaluation and modeling

M. Pons , S. Nishizawa , P. Wellmann , E. Blanquet , J. M. Dedulle
MRS Spring Meeting "B- Silicon Carbide – Materials, Processing and Devices", Apr 2006, San Francisco, United States. pp.64-77
Conference papers hal-00141104v1

In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging

Didier Chaussende , Peter J. Wellmann , Magali Ucar , Michel Pons , Roland Madar
2006, pp.63-66
Conference papers hal-00140007v1

Mechanism Of Orientation Selection For The Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals On Hexagonal Basis

L. Latu-Romain , D. Chaussende , L. Rapenne , M. Pons , R. Madar
European Conference on Silicon Carbide and Related Materials, 2006, Newcastle, United Kingdom. pp.199-202
Conference papers hal-00149093v1
Image document

Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

L. Latu-Romain , D. Chaussende , Carole Balloud , Sandrine Juillaguet , L. Rapenne
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩
Conference papers hal-00541637v1

Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism

M. Soueidan , G. Ferro , J. Stoemenos , E. K. Polychroniadis , D. Chaussende
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290
Conference papers hal-00140124v1

In-situ observation by X-ray imaging of mass transfer in the CF-PVT growth process

L. Latu-Romain , D. Chaussende , C. Balloud , J. Camassel , Etienne Pernot
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.99-102
Conference papers hal-00173466v1

Growth of AlN and AlN-SiC solid solution by sublimation method

M. Anikin , D. Chaussende , Etienne Pernot , Hervé Roussel , O. Chaix
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.1501-1504
Conference papers hal-00173468v1

Silicon carbide

Didier Chaussende , Noboru Ohtani
Single Crystals of Electronic Materials, Elsevier, pp.129-179, 2019, ⟨10.1016/B978-0-08-102096-8.00005-7⟩
Book sections hal-02366922v1
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VLS growth of SiC epilayers

Gabriel Ferro , Didier Chaussende , Christophe Jacquier
M. Syväjârvi and R. Yakimova. Wide band gap materials and new developments, Research signpost, pp.91-116, 2006
Book sections hal-00140374v1