Didier Chaussende

173
Documents

Présentation

Publications

10
9
5
5
3
3
3
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
8
7
5
1
1
5
2
6
3
10
13
6
12
14
15
19
3
8
18
4
1
4
4
1
2
19
14
10
6
4
3
3
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
119
24
6
5
5
6

Publications

Image document

Toward the Identification of Point Defects Formation and Solution Growth Mechanisms of Herbertsmithite Zn<sub>x</sub>Cu<sub>4-x</sub>(OH)<sub>6</sub>Cl<sub>2</sub> Crystals

Vijaya Shanthi Paul Raj , Alexandra Peña-Revellez , Jean-Sébastien Micha , Ravi Raj Purohit Purushottam Raj Purohit , Didier Chaussende et al.
Crystal Growth & Design, 2025, 25 (9), pp.2857-2873. ⟨10.1021/acs.cgd.4c01483⟩
Article dans une revue hal-05061747 v1
Image document

Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications

Didier Chaussende , Vincent Tabouret , Alexandre Crisci , Magali Morais , Stéphane Coindeau et al.
Materials Science in Semiconductor Processing, 2024, 182, ⟨10.1016/j.mssp.2024.108673⟩
Article dans une revue hal-04724617 v1
Image document

Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-ray-photoelectron spectroscopy

Jeremy Vives , Stephane Verdier , Fabien Deprat , Marvin Frauenrath , Romain Duru et al.
Journal of Materials Chemistry C, 2023, 11 (26), pp.8935-8941. ⟨10.1039/D3TC01107K⟩
Article dans une revue hal-04270769 v1
Image document

Novel Photonic Applications of Silicon Carbide

Haiyan Ou , Xiaodong Shi , Yaoqin Lu , Manuel Kollmuss , Johannes Steiner et al.
Materials, 2023, 16 (3), pp.1014. ⟨10.3390/ma16031014⟩
Article dans une revue (article de synthèse) hal-04042285 v1
Image document

Evidence of twin mediated growth in the CVD of polycrystalline silicon carbide

Yann Gallou , Marie Dubois , Alexandre Potier , Didier Chaussende
Acta Materialia, 2023, 259, pp.119274. ⟨10.1016/j.actamat.2023.119274⟩
Article dans une revue hal-04272514 v1
Image document

Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

Xiaodong Shi , Yaoqin Lu , Didier Chaussende , Karsten Rottwitt , Haiyan Ou
Materials, 2023, 16 (6), pp.2324. ⟨10.3390/ma16062324⟩
Article dans une revue hal-04042276 v1
Image document

STUDY OF HEAT TRANSFER IN A NICKEL DROPLET IN ELECTROMAGNETIC LEVITATION

R Pons , A Gagnoud , D Chaussende , O Budenkova
Magnetohydrodynamics c/c of Magnitnaia Gidrodinamika, 2022, 58 (4), pp.483-490. ⟨10.22364/mhd.58.4.12⟩
Article dans une revue hal-04228617 v1
Image document

Design of a coil for electromagnetic levitation: comparison of numerical models and coil realization

Romain Pons , Annie Gagnoud , Didier Chaussende , Olga Budenkova
Magnetohydrodynamics c/c of Magnitnaia Gidrodinamika, 2022, 58 (1/2), pp.55-64. ⟨10.22364/mhd⟩
Article dans une revue hal-03739247 v1
Image document

Substitutional Carbon Incorporation in SiGeC/Si Heterostructures: Influence of Silicon Precursors

Jérémy Vives , Fabien Deprat , Didier Dutartre , Justine Lespiaux , Romain Duru et al.
ECS Transactions, 2022, 109 (4), pp.237-248. ⟨10.1149/10904.0237ecst⟩
Article dans une revue hal-04042448 v1
Image document

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Xinming Xing , Takeshi Yoshikawa , Olga Budenkova , Didier Chaussende
Journal of Materials Science, 2022, ⟨10.1007/s10853-021-06816-y⟩
Article dans une revue hal-03515056 v1

In Situ Interferometry for ppm-Order Solubility Analysis at High Temperatures: A Case Study of Carbon Solubility in Molten Silicon

Sakiko Kawanishi , Takeshi Yoshikawa , Didier Chaussende , Hiroyuki Shibata
Metallurgical and Materials Transactions B, 2021, 52 (4), pp.2619-2625. ⟨10.1007/s11663-021-02216-4⟩
Article dans une revue hal-03413082 v1

Structural, Electronic and Vibrational Properties of Al4C3

Joseph Kioseoglou , Hoang‐long Le‐tran , Stefanos Giaremis , Isabelle Gelard , Thierry Ouisse et al.
physica status solidi (b), 2019, 256 (10), pp.1900037. ⟨10.1002/pssb.201900037⟩
Article dans une revue hal-02366916 v1
Image document

Critical assessment and thermodynamic modeling of the Al–C system

G. Deffrennes , B. Gardiola , M. Allam , Didier Chaussende , A. Pisch et al.
Calphad, 2019, 66, pp.101648. ⟨10.1016/j.calphad.2019.101648⟩
Article dans une revue hal-02366921 v1
Image document

Understanding Al incorporation into 4H-SiC during epitaxy

Gabriel Ferro , Didier Chaussende , Nikolaos Tsavdaris
Journal of Crystal Growth, 2019, 507, pp.338-343. ⟨10.1016/j.jcrysgro.2018.11.034⟩
Article dans une revue hal-02121592 v1

The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS

Sven Tengeler , Bernhard Kaiser , Gabriel Ferro , Didier Chaussende , Wolfram Jaegermann
Applied Surface Science, 2018, 427, pp.480 - 485. ⟨10.1016/j.apsusc.2017.08.220⟩
Article dans une revue hal-01615027 v1

Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4

Simon Forster , Didier Chaussende , Karol Kalna
ACS Applied Energy Materials, 2018, 2 (1), pp.715-720. ⟨10.1021/acsaem.8b01767⟩
Article dans une revue hal-02366910 v1
Image document

Vaporization and condensation in the Al4C3-SiC system

Hoang-Long Le-Tran , Eirini Sarigiannidou , Isabelle Gelard , Didier Chaussende
Journal of the European Ceramic Society, 2017, 37 (15), pp.4475 - 4482. ⟨10.1016/j.jeurceramsoc.2017.05.038⟩
Article dans une revue hal-01620934 v1

Conversion of MAX phase single crystals in highly porous carbides by high temperature chlorination

Shiqui Zhang , Lu Shi , Florian Mercier , O. Chaix-Pluchery , D. Chaussende et al.
Ceramics International, 2017, 43 (11), pp.8246-8254. ⟨10.1016/j.ceramint.2017.03.153⟩
Article dans une revue hal-01762237 v1

Al 4 SiC 4 vibrational properties: density functional theory calculations compared to Raman and infrared spectroscopy measurements

L. Pedesseau , O. Chaix-Pluchery , M. Modreanu , D. Chaussende , E. Sarigiannidou et al.
Journal of Raman Spectroscopy, 2017, 48 (6), pp.891-896. ⟨10.1002/jrs.5128⟩
Article dans une revue hal-01485456 v1
Image document

A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy

Gabriel Ferro , Didier Chaussende
Scientific Reports, 2017, 7, pp.43069. ⟨10.1038/srep43069⟩
Article dans une revue hal-01615178 v1

(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

Sven Tengeler , Bernhard Kaiser , Didier Chaussende , Wolfram Jaegermann
Applied Surface Science, 2017, 400, pp.6 - 13. ⟨10.1016/j.apsusc.2016.12.136⟩
Article dans une revue hal-01620939 v1

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

Kanaparin Ariyawong , Christian Chatillon , Elisabeth Blanquet , Jean-Marc Dedulle , Didier Chaussende
CrystEngComm, 2016, 18 (12), pp.2119-2124. ⟨10.1039/c5ce02480c⟩
Article dans une revue hal-01366561 v1

Undercooling measurement and nucleation study of silicon droplets on various substrates

M.G. Tsoutouva , T. Duffar , D. Chaussende , M. Kamguem
Journal of Crystal Growth, 2016, ⟨10.1016/j.jcrysgro.2016.07.018⟩
Article dans une revue hal-01464054 v1

Analysis of Macrostep Formation during Top Seeded Solution Growth of 4H-SiC

Kanaparin Ariyawong , Yun Ji Shin , Jean-Marc Dedulle , Didier Chaussende
Crystal Growth & Design, 2016, 16 (6), pp.3231-3236. ⟨10.1021/acs.cgd.6b00155⟩
Article dans une revue hal-01456078 v1

Synthesis and Characterization of Al<sub>4</sub>SiC<sub>4</sub>: A “New” Wide Band Gap Semiconductor Material

Dimitrios Zevgitis , Odette Chaix-Pluchery , Béatrice Doisneau , Mircea Modreanu , Joseph La Manna et al.
Materials Science Forum, 2015, 821-823, pp.974-977
Article dans une revue hal-02012987 v1

Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

Laurent Pedesseau , Jacky Even , Mircea Modreanu , Didier Chaussende , Erini Sarigiannidou et al.
APL Materials, 2015, 3 (12), pp.121101. ⟨10.1063/1.4936667⟩
Article dans une revue hal-01236491 v1

Photoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of Growth

Gediminas Liaugaudas , Donatas Dargis , Kestutis Jarašiunas , Nikolaos Tsavdaris , Eirini Sarigiannidou et al.
Materials Science Forum, 2015, 821-823, pp.253-256
Article dans une revue hal-02012973 v1

Magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals and application to the M n + 1 A X n phases

T. Ouisse , L. Shi , B. Piot , B. Hackens , V. Mauchamp et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 92 (4)
Article dans une revue hal-01986020 v1

On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates

Gediminas Liaugaudas , Kestutis Jarašiunas , Nikolaos Tsavdaris , Eirini Sarigiannidou , Didier Chaussende
Materials Science Forum, 2014, 778-780, pp.305-308
Article dans une revue hal-02012879 v1

Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide

Nikolaos Tsavdaris , Kanaparin Ariyawong , Jean-Marc Dedulle , Eirini Sarigiannidou , Didier Chaussende
Crystal Growth & Design, 2014, 15 (1), pp.156-163
Article dans une revue hal-02012984 v1

Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC

Nikolaos Tsavdaris , Kanaparin Ariyawong , Eirini Sarigiannidou , Jean Marc Dedulle , Odette Chaix-Pluchery et al.
Materials Science Forum, 2014, 806, pp.61-64. ⟨10.4028/www.scientific.net/MSF.806.61⟩
Article dans une revue hal-02012985 v1

Synthesis of single crystals of V2AlC phase by high-temperature solution growth and slow cooling technique

Lu Shi , T. Ouisse , E. Sarigiannidou , O. Chaix-Pluchery , H. Roussel et al.
Acta Materialia, 2014, 83, pp.304-309. ⟨10.1016/j.actamat.2014.10.018⟩
Article dans une revue hal-01226018 v1
Image document

Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

K. Alassaad , M. Vivona , V. Soulière , B. Doisneau , F. Cauwet et al.
ECS Journal of Solid State Science and Technology, 2014, 3 (8), pp.P285 - P292. ⟨10.1149/2.0121408jss⟩
Article dans une revue hal-01615319 v1

Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT

Kanaparin Ariyawong , Elisabeth Blanquet , Jean Marc Dedulle , Thierry Ouisse , Didier Chaussende
Materials Science Forum, 2014, 778-780, pp.778-780. ⟨10.4028/www.scientific.net/MSF.778-780.35⟩
Article dans une revue hal-01122442 v1

Spiral step dissociation on PVT grown SiC crystals

Martin Seiss , Thierry Ouisse , Didier Chaussende
Materials Science Forum, 2014, Vols. 778-780, pp.39-42. ⟨10.4028/www.scientific.net/MSF.778-780.39⟩
Article dans une revue hal-01067413 v1

Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal

Gediminas Liaugaudas , Kestutis Jarašiunas , Nikolaos Tsavdaris , Eirini Sarigiannidou , Didier Chaussende
Materials Science Forum, 2014, 806, pp.65-69
Article dans une revue hal-02012974 v1

Open Issues in SiC Bulk Growth

Jean-Marc Dedulle , Didier Chaussende , Kanaparin Ariyawong , Nikolaos Tsavdaris , Martin Seiss et al.
Materials Science Forum, 2014, 778-780 (6), pp.3-8
Article dans une revue hal-02012866 v1

Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

Xiaojian Li , H. Jacobson , Alexandre Boulle , D. Chaussende , A. Henry
ECS Journal of Solid State Science and Technology, 2014, 3 (4), pp.P75-P81. ⟨10.1149/2.012404jss⟩
Article dans une revue hal-01226019 v1

Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation

Nikolaos Tsavdaris , Kanaparin Ariyawong , Odette Chaix-Pluchery , Jean Marc Dedulle , Eirini Sarigiannidou et al.
Materials Science Forum, 2014, 778-780, pp.13-16. ⟨10.4028/www.scientific.net/MSF.778-780.13⟩
Article dans une revue hal-02012874 v1

Birefringence Microscopy of Unit Dislocations in Diamond

L. T. M. Hoa , T. Ouisse , D. Chaussende , M. Naamoun , A. Tallaire et al.
Crystal Growth & Design, 2014, 14 (11), pp.5761-5766. ⟨10.1021/cg5010193⟩
Article dans une revue hal-01226020 v1
Image document

Epitaxial graphene morphologies probed by weak (anti)-localization

Ather Mahmood , Cécile Naud , Clément Bouvier , Fanny Hiebel , Pierre Mallet et al.
Journal of Applied Physics, 2013, 113 (8), pp.083715. ⟨10.1063/1.4793591⟩
Article dans une revue hal-00705711 v2
Image document

Polytypic transformations in SiC : diuse X-ray scattering and Monte Carlo simulations

Alexandre Boulle , D. Dompoint , I. Galben-Sandulache , D. Chaussende
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88 (2), ⟨10.1103/PhysRevB.88.024103⟩
Article dans une revue hal-02193723 v1

Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals

Martin Seiss , T. Ouisse , D. Chaussende
Journal of Crystal Growth, 2013, 384, pp.129-134. ⟨10.1016/j.jcrysgro.2013.09.022⟩
Article dans une revue istex hal-01067412 v1

High temperature solution growth and characterization of Cr2AlC single crystals

T. Ouisse , E. Sarigiannidou , O. Chaix-Pluchery , Hervé Roussel , B. Doisneau et al.
Journal of Crystal Growth, 2013, 384, pp.88-95. ⟨10.1016/j.jcrysgro.2013.09.021⟩
Article dans une revue istex hal-01067401 v1

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

C. Coletti , S. Forti , A. Principi , K. V. Emtsev , A. A. Zakharov et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88 (15), pp.155439. ⟨10.1103/PhysRevB.88.155439⟩
Article dans une revue hal-01067356 v1

3C-SiC heteroepitaxy on hexagonal SiC substrates

A. Henry , Xiaojian Li , H. Jacobson , S. Andersson , Alexandre Boulle et al.
Materials Science Forum, 2013, Volumes 740 - 742 (Chapter 4: Epitaxial Growth 3C SiC), pp.267-270. ⟨10.4028/www.scientific.net/MSF.740-742.267⟩
Article dans une revue hal-00945824 v1

Critical assessment of birefringence imaging of dislocations in 6H silicon carbide

L. T. M. Hoa , T. Ouisse , D. Chaussende
Journal of Crystal Growth, 2012, 354 (1), pp.202-207. ⟨10.1016/j.jcrysgro.2012.06.009⟩
Article dans une revue istex hal-01067372 v1
Image document

Diffuse X-ray scattering from partially transformed 3C-SiC single crystals

D. Dompoint , Alexandre Boulle , I.G. Galben-Sandulache , D. Chaussende
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 284, pp.19-22. ⟨10.1016/j.nimb.2011.09.008⟩
Article dans une revue istex hal-02193739 v1

Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma.

J.H Choi. , L. Latu-Romain. , F. Dhalluin. , T. Chevolleau. , B. Salem et al.
Materials Science Forum, 2012, 711, pp. 66-69
Article dans une revue hal-00762143 v1

Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent

J. Lefebure , J. M. Dedulle , T. Ouisse , D. Chaussende
Crystal Growth & Design, 2012, 12 (2), pp.909-913. ⟨10.1021/cg201343w⟩
Article dans une revue hal-01067388 v1
Image document

Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals

A. Debelle , M. Backman , L. Thome , W. Weber , M. Toulemonde et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (10), ⟨10.1103/PhysRevB.86.100102⟩
Article dans une revue hal-02193726 v1
Image document

On the stability of 3C-SiC single crystals at high temperatures

Deborah Dompoint , Irina Galben-Sandulache , Alexandre Boulle , Didier Chaussende , Dominique Eyidi et al.
Materials Science Forum, 2012, 717-720, pp.493-496. ⟨10.4028/www.scientific.net/MSF.717-720.493⟩
Article dans une revue hal-02193762 v1

Application of an axial next-nearest-neighbor Ising model to the description of Mn+1AXn phases

T. Ouisse , D. Chaussende
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85 (10), pp.104110. ⟨10.1103/PhysRevB.85.104110⟩
Article dans une revue hal-01067399 v1
Image document

Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: a diuse X-ray scattering study

D. Dompoint , Alexandre Boulle , I. Galben-Sandulache , D. Chaussende , L. T M Hoa et al.
Journal of Applied Physics, 2011, 110 (5), pp.053508. ⟨10.1063/1.3627371⟩
Article dans une revue hal-02193765 v1

Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD).

A. Claudel , Y. Chowanek , E. Blanquet , D. Chaussende , R. Boichot et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (7-8), pp.2019-2021
Article dans une revue hal-00692267 v1

Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

A. Claudel , E. Blanquet , D. Chaussende , R. Boichot , Roland Martin et al.
Journal of The Electrochemical Society, 2011, 158 (3), pp.H328-H332. ⟨10.1149/1.3536477⟩
Article dans une revue hal-00640123 v1

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

C. Coletti , K. V. Emtsev , A. A. Zakharov , T. Ouisse , D. Chaussende et al.
Applied Physics Letters, 2011, 99 (8), pp.081904. ⟨10.1063/1.3618674⟩
Article dans une revue hal-01067355 v1

From Si nanowire to SiC nanotube

L. Latu-Romain , M. Ollivier , A. Mantoux , G. Auvert , O. Chaix-Pluchery et al.
Journal of Nanoparticle Research, 2011, 13 (10), pp.5425-5433. ⟨10.1007/s11051-011-0530-9⟩
Article dans une revue istex hal-00629242 v1

Morphological instabilities induced by foreign particles and Ehrlich-Schwoebel effect during the two-dimensional growth of crystalline Ti3SiC2

Florian Mercier , T. Ouisse , D. Chaussende
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (7), pp.075411. ⟨10.1103/PhysRevB.83.075411⟩
Article dans une revue hal-01067393 v1

Raman scattering from Ti3SiC2 single crystals

Florian Mercier , O. Chaix-Pluchery , T. Ouisse , D. Chaussende
Applied Physics Letters, 2011, 98 (8), pp.081912. ⟨10.1063/1.3558919⟩
Article dans une revue hal-01067392 v1

Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system

K. Seki , A. Alexander , S. Kozawa , T. Ujihara , Patrick Chaudouet et al.
Journal of Crystal Growth, 2011, 335 (1), pp.94-99. ⟨10.1016/j.jcrysgro.2011.09.004⟩
Article dans une revue istex hal-01067466 v1

Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process.

A. Claudel , E. Blanquet , D. Chaussende , R. Boichot , B. Doisneau et al.
Journal of Crystal Growth, 2011, 335 (1), pp.17-24. ⟨10.1016/j.jcrysgro.2011.09.018⟩
Article dans une revue istex hal-00664176 v1

Micropipe-induced birefringence in 6H silicon carbide

T. Ouisse , D. Chaussende , L. Auvray
Journal of Applied Crystallography, 2010, 43, pp.122-133. ⟨10.1107/s0021889809043957⟩
Article dans une revue istex hal-01067400 v1

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Frédéric Mercier , Irina G. Galben-Sandulache , Maya Marinova , Georgios Zoulis , Thierry Ouisse et al.
Materials Science Forum, 2010, Materials Science Forum, 645-648, pp.59-62. ⟨10.4028/www.scientific.net/MSF.645-648.59⟩
Article dans une revue hal-02510365 v1

Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase

Olivier Kim-Hak , Jean Lorenzzi , Nikoletta Jegenyes , Gabriel Ferro , Davy Carole et al.
Materials Science Forum, 2010, 645-648, pp.163-166. ⟨10.4028/www.scientific.net/MSF.645-648.163⟩
Article dans une revue hal-02735381 v1
Image document

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals

A. Debelle , L. Thome , D Dompoint , Alexandre Boulle , F. Garrido et al.
Journal of Physics D: Applied Physics, 2010, 43 (45), pp.455408. ⟨10.1088/0022-3727/43/45/455408⟩
Article dans une revue istex hal-02193735 v1
Image document

Quantitative analysis of diffuse X-ray scattering in partially transformed 3C-SiC single crystals

Alexandre Boulle , D. Dompoint , I. Galben-Sandulache , D. Chaussende
Journal of Applied Crystallography, 2010, 43 (4), pp.867-875. ⟨10.1107/S0021889810019412⟩
Article dans une revue istex hal-02193826 v1

Evolution of 3C-SiC islands nucleated from a liquid phase on Si face alpha-SiC substrates

O. Kim-Hak , G. Ferro , J. Lorenzzi , D. Carole , J. Dazord et al.
Thin Solid Films, 2010, 518 (15), pp.4234-4241. ⟨10.1016/j.tsf.2009.12.086⟩
Article dans une revue istex hal-01067377 v1

Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth

Frédéric Mercier , Jean-Marc Dedulle , Didier Chaussende , Michel Pons
Journal of Crystal Growth, 2010, 312 (2), pp.155-163. ⟨10.1016/j.jcrysgro.2009.10.007⟩
Article dans une revue istex hal-00466813 v1
Image document

Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

A. Claudel , E. Blanquet , D. Chaussende , M. Audier , D. Pique et al.
Journal of Crystal Growth, 2009, 311 (13), pp.3371-3379. ⟨10.1016/j.jcrysgro.2009.03.053⟩
Article dans une revue hal-00408487 v1

High-speed growth and characterization of polycrystalline AlN layers by High temperature Chemical Vapor Deposition (HTCVD).

A. Claudel , E. Blanquet , D. Chaussende , Roland Martin , D. Pique et al.
ECS Transactions, 2009, 25 (8), pp.323-326
Article dans une revue hal-00457445 v1

Growth of thick AIN layers by high temperature CVD ('HTCVD)

A. Claudel , E. Blanquet , D. Chaussende , M. Audier , D. Pique et al.
Materials Science Forum, 2009, 600-603, pp.1269-1272
Article dans une revue hal-00389378 v1

A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates

M. Marinoya , Florian Mercier , A. Mantzari , I. Galben , D. Chaussende et al.
Physica B: Condensed Matter, 2009, 404 (23-24), pp.4749-4751. ⟨10.1016/j.physb.2009.08.190⟩
Article dans une revue istex hal-01067391 v1
Image document

The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering

Alexandre Boulle , J. Aubé , I. Galben-Sandulache , D. Chaussende
Applied Physics Letters, 2009, 94 (20), pp.201904. ⟨10.1063/1.3141509⟩
Article dans une revue hal-02190246 v1

Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy

D. Chaussende , Florian Mercier , R. Madar , M. Pons
Materials Science Forum, 2009, 600-603, pp.71-74
Article dans une revue hal-00374734 v1

Silicon Carbide growth : C/Si ratio Evaluation and Modeling

M. Pons , S.I. Nishizawa , P. Wellmann , E. Blanquet , D. Chaussende et al.
Materials Science Forum, 2009, 600-603, pp.83-88
Article dans une revue hal-00389369 v1

Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate

O. Kim-Hak , G. Ferro , J. Dazord , M. Marinova , J. Lorenzzi et al.
Journal of Crystal Growth, 2009, 311 (8), pp.2385-2390. ⟨10.1016/j.jcrysgro.2009.01.132⟩
Article dans une revue istex hal-01067376 v1

Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD)

E. Blanquet , D. Chaussende , A. Claudel , D. Pique , M. Pons
Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S348-S351
Article dans une revue hal-00432756 v1
Image document

Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering

Alexandre Boulle , D. Chaussende , F. Conchon , G. Ferro , O. Masson
Journal of Crystal Growth, 2008, 310 (5), pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩
Article dans une revue istex hal-02193853 v1
Image document

Prospects for 3C-SiC bulk crystal growth

Didier Chaussende , Frédéric J. Mercier , Alexandre Boulle , Florine Conchon , Maher Soueidan et al.
Journal of Crystal Growth, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩
Article dans une revue hal-00174181 v1

Status of SiC bulk growth process

Didier Chaussende , Peter Wellmann , Michel Pons
Journal of Physics D: Applied Physics, 2007, 20 (20), pp.6150-6158. ⟨10.1088/0022-3727/40/20/S02⟩
Article dans une revue istex hal-00114194 v1

Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering

Alexandre Boulle , D. Chaussende , F. Pecqueux , Florine Conchon , L. Latu-Romain et al.
Physica Status Solidi A (applications and materials science), 2007, 204 (8), pp.2528-2534. ⟨10.1002/pssa.200675652⟩
Article dans une revue istex hal-00176514 v1
Image document

X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals

Alexandre Boulle , D. Chaussende , L. Latu-Romain , F. Conchon , O. Masson et al.
Applied Physics Letters, 2006, 89 (9), pp.091902. ⟨10.1063/1.2338787⟩
Article dans une revue hal-02193856 v1

High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

G. Chichignoud , M. Pons , E. Blanquet , D. Chaussende , M. Anikin et al.
Surface and Coatings Technology, 2006, 201 (7), pp.4014-4020
Article dans une revue hal-00141052 v1

Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process

Didier Chaussende , Elisabeth Blanquet , Francis Baillet , Magali Ucar , Guy Chichignoud
Chemical Vapor Deposition, 2006, 12 (8-9), pp.541-548. ⟨10.1002/cvde.200606471⟩
Article dans une revue istex hal-00118819 v1

Characterization of a 3C-SiC single domain grown on 6H-SiC(0001) by a vapor-liquid-solid mechanism

Maher Soueidan , Gabriel Ferro , B. Nsouli , Mohamad Roumie , Efsthatios Polychroniadis et al.
Crystal Growth & Design, 2006, 6 (11), pp.2598-2602. ⟨10.1021/cg0603523⟩
Article dans une revue hal-00389882 v1

Characterization of bulk <111> 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

L. Latu-Romain , D. Chaussende , C. Balloud , S. Juillaguet , L. Rapenne et al.
Silicon carbide and related materials, 2006, pp.527-529 / 99-102
Article dans une revue hal-00394389 v1

High temperature nucleation of cubic silicon carbide on (0001) hexagonal SiC nominal surfaces

L. Latu-Romain , D. Chaussende , M. Pons
Crystal Growth & Design, 2006, 6 (12), pp.2788-2794
Article dans une revue hal-00141565 v1

High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces

Laurence Latu-Romain , Didier Chaussende , Michel Pons
Crystal Growth & Design, 2006, 6 (12), pp.2788-2794. ⟨10.1021/cg060420l⟩
Article dans une revue hal-00133832 v1

Study of 3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces by the CF-PVT method

Laurence Latu-Romain , Didier Chaussende , Patrick Chaudouët , Florence Robaut , Gregory Berthomé et al.
Journal of Crystal Growth, 2005, 275, pp.e609-e613. ⟨10.1016/j.jcrysgro.2004.11.005⟩
Article dans une revue istex hal-00188007 v1

Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications

Didier Chaussende , Magali Ucar , Laurent Auvray , Francis Baillet , Michel Pons et al.
Crystal Growth & Design, 2005, 5 (4), pp.1539-1544. ⟨10.1021/cg050009i⟩
Article dans une revue hal-00118809 v1

Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method

Didier Chaussende , Carole Balloud , Laurent Auvray , Francis Baillet , Marcin Zielinski et al.
Materials Science Forum, 2004, 457-460, pp. 91-94. ⟨10.4028/0-87849-943-1.91⟩
Article dans une revue hal-00417942 v1

Continuous Feed Physical Vapor Transport : Toward High Purity and Long Boule Growth of SiC

Didier Chaussende , Francis Baillet , Ludovic Charpentier , Etienne Pernot , Michel Pons et al.
Journal of The Electrochemical Society, 2003, 150 (10), pp.G653-G657. ⟨10.1149/1.1606689⟩
Article dans une revue hal-00187159 v1

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Michel Pons , Francis Baillet , Elisabeth Blanquet , Etienne Pernot , Roland Madar et al.
Applied Surface Science, 2003, 212-213, pp.177-183. ⟨10.1016/S0169-4332(03)00064-3⟩
Article dans une revue istex hal-00187935 v1

Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

Etienne Pernot , I. El Harrouni , Michel Mermoux , Jean-Marie Bluet , Mikhail Anikin et al.
Materials Science Forum, 2003, 433-436, pp. 265-268. ⟨10.4028/www.scientific.net/MSF.433-436.265⟩
Article dans une revue hal-00418043 v1

SiC Homoepitaxial Growth at Low Temperature by Vapor-Liquid-Solid Mechanism in Al-Si Melt

Christophe Jacquier , Gabriel Ferro , François Cauwet , Didier Chaussende , Yves Monteil
Crystal Growth & Design, 2003, 3 (3), pp.285-287. ⟨10.1021/cg0256069⟩
Article dans une revue hal-00187892 v1

Single atomic steps on SiC polished surfaces

Patrice Vicente , Didier Chaussende
III-Vs Review, 2002, 15 (4), pp.46-47
Article dans une revue hal-00187897 v1

A comprehensive study of SiC growth processes in a VPE reactor

Thierry Chassagne , Gabriel Ferro , Didier Chaussende , François Cauwet , Yves Monteil et al.
Thin Solid Films, 2002, 402, pp.83-89
Article dans une revue hal-00187126 v1

Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

Didier Chaussende , Gabriel Ferro , Yves Monteil
Journal of Crystal Growth, 2002, 234, pp.63-69
Article dans une revue hal-00187136 v1

Study of the interaction between graphite and Al-Si melts for the growth of crystalline silicon carbide

Christophe Jacquier , Didier Chaussende , Gabriel Ferro , Jean-Claude Viala , François Cauwet et al.
Journal of Materials Science, 2002, 37, pp.3299-3306
Article dans une revue hal-00187149 v1

Thermochemistry of silicon carbide growth by chemical transport reactions

Didier Chaussende , Gabriel Ferro , Yves Monteil , Christian Brylinski , Jean Bouix
Journal of Materials Science, 2001, 36, pp.335-342
Article dans une revue hal-00186942 v1

Role of SIMOX defects on the structural properties of b-SiC:SIMOX

Gabriel Ferro , Nicolas Planes , Victoria Papaioannou , Didier Chaussende , Yves Monteil et al.
Materials Science and Engineering: B, 1999, 61-62, pp.586-592
Article dans une revue hal-00186941 v1

Thermodynamical calculations on the chemical vapor transport of silicon carbide

Didier Chaussende , Yves Monteil , Patrick Aboughe-Nze , Christian Brylinski , Jean Bouix
Materials Science and Engineering: B, 1999, 61-62, pp.98-101
Article dans une revue hal-00186935 v1

Experimental study of an electromagnetically levitated droplet of liquid metal under a superposed horizontal magnetic DC field

Romain Pons , Abdelmagid El Bakali , Paul Chometon , A. Gagnoud , Didier Chaussende et al.
13th PAMIR International Conference - Fundamental and Applied MHD, Sep 2024, Carry-le-Rouet, France
Communication dans un congrès hal-04774080 v1

Strong Third-order Nonlinearity in Silicon-rich Amorphous Silicon Carbide Integrated Platforms

Yaoqin Lu , Xiaodong Shi , Adnan Ali Afridi , Didier Chaussende , Karsten Rottwitt et al.
CLEO: Applications and Technology, May 2024, Charlotte, United States. pp.JTh2A.22, ⟨10.1364/CLEO_AT.2024.JTh2A.22⟩
Communication dans un congrès hal-04800385 v1

Screening trial of step-bunching behavior on 4H-SiC (000-1) in various solvents by interface reconstruction

Tomoya Noji , Masashi Nakamoto , Masanori Suzuki , Takeshi Yoshikawa , Sakiko Kawanishi et al.
JIM Fall Meeting, The Japan Institute of Metals and Materials, Sep 2024, Osaka, Japan
Communication dans un congrès hal-04799831 v1

2-inch SiC solution growth using SiC liner crucible fabricated by reactive infiltration

Sakiko Kawanishi , Takeshi Mitani , Sora Ashimoto , Didier Chaussende , Takeshi Yoshikawa
JIM Fall Meeting, The Japan Institute of Metals and Materials, Sep 2024, Osaka, Japan
Communication dans un congrès hal-04799833 v1

Nucleation and Growth Mechanisms of Polycrystalline SiGe-Based Materials By Chemical Vapor Deposition at Reduced Pressure

Jeremy Vives , Julie Chaussard , Fabien Deprat , Marvin Frauenrath , Ece Aybeke et al.
PRiME 2024, The Electrochemical Society, Oct 2024, Honolulu, HI, United States
Communication dans un congrès hal-04799786 v1

Benchmarking of HCl-Based Cyclic Deposition / Etch (CDE) and Single Deposition / Etch (DE) Processes for Selective Epitaxial Growth of SiGeC:B Films

Jeremy Vives , Fabien Deprat , Marvin Frauenrath , Stephane Verdier , Ece Aybeke et al.
PRiME 2024, The Electrochemical Society, Oct 2024, Honolulu, HI, United States
Communication dans un congrès hal-04799826 v1

Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-Ray-Photoelectron spectroscopy

Jeremy Vives , Stéphane Verdier , Fabien Deprat , Marvin Frauenrath , Romain Duru et al.
ICS-ISTDM 2023, May 2023, Como, Italy
Communication dans un congrès hal-04800320 v1

AC Calorimetry of Liquid Metals in Electromagnetic Levitation: Comparison of Procedures in Microgravity and Terrestrial Conditions:

Romain Pons , A. Gagnoud , Didier Chaussende , Olga Budenkova
TMS 2023 Materials Research in Reduced Gravity — Thermophysical Properties, Mar 2023, San-Diego, CA, United States
Communication dans un congrès hal-04861711 v1
Image document

Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al

Gabriel Ferro , Didier Chaussende
18th International Conference on Silicon Carbide and Related Materials (ICSCRM 2019), Sep 2019, Kyoto, Japan. pp.96-101, ⟨10.4028/www.scientific.net/MSF.1004.96⟩
Communication dans un congrès hal-02990885 v1

Sublimation growth of a new promising semiconductor Al4SiC4

Hoang-Long Le Tran , Eirini Sarigiannidou , Odette Chaix-Pluchery , Isabelle Gélard , Thierry Ouisse et al.
E- MRS Spring, May 2017, Strasbourg, France
Communication dans un congrès hal-02112233 v1

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

Nikolaos Tsavdaris , Pawel Kwasnicki , Kanaparin Ariyawong , Nathalie Valle , Herve Peyre et al.
ECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩
Communication dans un congrès hal-01936649 v1

Optical properties of wide band gap Al4SiC4: experimental and theoretical approaches

Laurent Pedesseau , Jacky Even , Olivier Durand , Mircea Modreanu , D. Chaussende et al.
European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès hal-01162159 v1

Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC

D. Chaussende , L. Parent-Bert , Y.J. Shin , T. Ouisse , T. Yoshikawa
16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02016972 v1

Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solvents

Yun Ji Shin , Beatrice Doisneau , Kanaparin Ariyawong , Pierre Brosselard , Didier Chaussende
International conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩
Communication dans un congrès hal-02016968 v1

Top seeded solution growth of 4H - SiC single crystal using graphite block with rough surface

Ji-Young Yoon , Byeong Geun Kim , Ji-Eun Lee , Myung -Hyun Lee , Won- Seon Seo et al.
International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02016964 v1

Wide optical band gap Al4SiC4

Laurent Pedesseau , Jacky Even , Olivier Durand , Mircea Modreanu , Didier Chaussende et al.
European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Communication dans un congrès hal-01203372 v1

Ge assisted SiC epitaxial growth by CVD on SiC substrate

Kassem Alassaad , Véronique Soulière , Beatrice Doisneau , François Cauwet , Hervé Peyre et al.
15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩
Communication dans un congrès hal-02025422 v1

Diffuse X-Ray scattering and Monte Carlo studies of spatially correlated stacking faults in SiC

Alexandre Boulle , Deborah Dompoint , I. Galben Sandulache , D. Chaussende
2012 MRS Fall Meeting & Exhibit, Nov 2012, Boston, United States
Communication dans un congrès hal-00952309 v1

3C-SiC heteroepitaxy on hexagonal SiC substrates

A. Henry , Xiaojian Li , H. Jacobson , S. Andersson , Alexandre Boulle et al.
European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2012, Saint Petersburg, Russia
Communication dans un congrès hal-00944202 v1

Etude structurale des dislocations dans les polytypes 4H et 3C de SiC

J.L. Demenet , A. Madyan , J. Rabier , C. Tromas , D. Eyidi et al.
Journées Plénières du GnR Matinex 2011, Feb 2012, Lyon, France
Communication dans un congrès hal-00952203 v1

Experimental study of defect recovery induced by swift heavy ions in 6H-SiC and 3C-SiC

A. Debelle , Alexandre Boulle , L. Thome , F. Garrido , M. Backman et al.
MRS 2012 Spring Meeting, Apr 2012, San Francisco, United States
Communication dans un congrès hal-00952235 v1

Growth of Ti3SiC2 single crystals

Didier Chaussende , Thierry Ouisse
36th International Conference and Expo on Advanced Ceramics and Composites, Jan 2012, Daytona Beach (Floride), United States
Communication dans un congrès hal-00672082 v1

Recent advances on SiC bulk growth processes

Didier Chaussende
Confidential, Nov 2011, Pohang, South Korea
Communication dans un congrès hal-00672078 v1

SiC and AlN growth processing : experiments and simulation.

M. Pons , D. Chaussende , J.M. Dedulle , R. Boichot , E. Blanquet
International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Communication dans un congrès hal-00692283 v1

Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication.

E. Blanquet (invitée) , A. Claudel , V. Brizé , R. Boichot , D. Chaussende et al.
International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Communication dans un congrès hal-00692280 v1

Initiation d'une " filière nitrures à grand gap " : croissance et caractérisation de cristaux massifs d'AlN pour les applications optoélectroniques

Didier Chaussende
Journée Recherche de Grenoble INP, Feb 2011, Grenoble, France
Communication dans un congrès hal-00672062 v1

SiC bulk growth processes: achievements and next challenges

Didier Chaussende
2nd Annual Meeting of the SiC Research Community in Korea, Nov 2011, Seoul, South Korea
Communication dans un congrès hal-00672069 v1

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the seeded growth of 3C-SiC Crystals

G.L. Sun , I.G. Galben-Sandulache , T. Ouisse , J.M. Dedulle , M. Pons et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.63-66, ⟨10.4028/www.scientific.net/MSF.645-648.63⟩
Communication dans un congrès hal-00517405 v1
Image document

Defects and Polytypism in SiC: The Role of Diffuse X-Ray Scattering

Alexandre Boulle , D. Dompoint , I. Galben-Sandulache , D. Chaussende
2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩
Communication dans un congrès hal-02193824 v1

Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronics

M. Pons , S. Nishizawa , E. Blanquet , R. Boichot , D. Chaussende
Renewable Energy 2010, Jun 2010, Yokohama, Japan
Communication dans un congrès hal-00502036 v1

Vapor Phase vs. Liquid Phase: What is the Best Choice for the Growth of Bulk 3C-SiC Crystals?

D. Chaussende
European Materials Research Society (E-MRS) Spring meeting, Jun 2010, Strasbourg, France
Communication dans un congrès hal-00672043 v1

SiC bulk growth technologies

Didier Chaussende
Winter School on Growth and epitaxy, Jan 2010, Linköping, Sweden
Communication dans un congrès hal-00671985 v1

Overview of SiC bulk growth processes

D. Chaussende
Confidential, Dec 2010, Amagasaki, Japan
Communication dans un congrès hal-00672047 v1

Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scattering

Deborah Dompoint , Alexandre Boulle , I.G. Galben-Sandulache , D. Chaussende
E-MRS, Jun 2010, Strasbourg, France. pp.71-74, ⟨10.1063/1.3518314⟩
Communication dans un congrès hal-00686913 v1

Study of the spontaneous nucleation of 3C-SiC single crystals using CF-PVT technique

I.G. Galben-Sandulache , G.L. Sun , J.M. Dedulle , T. Ouisse , R. Madar et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.55-58, ⟨10.4028/www.scientific.net/MSF.645-648.55⟩
Communication dans un congrès hal-00517395 v1

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)

A. Claudel , D. Chaussende , E. Blanquet , D. Pique , M. Pons
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.987-990
Communication dans un congrès hal-00426590 v1

Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling

M. Pons , S. Nishizawa , P. Wellmann , E. Blanquet , D. Chaussende et al.
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88
Communication dans un congrès hal-00173481 v1

Cristallogenèse des semi-conducteurs à grand gap : contexte et enjeux

D. Chaussende
Les Midis MINATEC, Jun 2009, Grenoble, France
Communication dans un congrès hal-00671980 v1

Growth of thick AlN layers by High Temperature CVD

A. Claudel , E. Blanquet , D. Chaussende , M. Audier , D. Pique et al.
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Otsu, Japan. pp.1269-1272
Communication dans un congrès hal-00337372 v1

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

J. Eid , I.-G. Galben , G. Zoulis , Teddy Robert , D. Chaussende et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48
Communication dans un congrès hal-00390466 v1

Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC

Maya Marinova , Georgios Zoulis , Teddy Robert , Frederic Mercier , Alkioni Mantzari et al.
25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730
Communication dans un congrès hal-00543681 v1

Dislocation-Induced Birefringence in Silicon Carbide

Thierry Ouisse , Didier Chaussende , Laurent Auvray , Etienne Pernot , Roland Madar
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.271-274, ⟨10.4028/www.scientific.net/MSF.615-617.271⟩
Communication dans un congrès hal-02890909 v1
Image document

Top Seeded Solution Growth of 3C-SiC single crystals

Frédéric Mercier , Didier Chaussende , Jean-Marc Dedulle , Michel Pons , Roland Madar
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.41-44, ⟨10.4028/www.scientific.net/MSF.615-617.41⟩
Communication dans un congrès hal-00426587 v1
Image document

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

Didier Chaussende , Jessica Eid , Frédéric Mercier , Roland Madar , Michel Pons
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.31-36, ⟨10.4028/www.scientific.net/MSF.615-617.31⟩
Communication dans un congrès hal-00389062 v1

Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy

Florian Mercier , D. Chaussende , R. Madar , M. Pons
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.71-74
Communication dans un congrès hal-00337375 v1

Characterization of stacking faults in thick 3C-SiC crystals using high resolution diffuse X-ray scattering

Alexandre Boulle , D. Chaussende , Florine Conchon , Florian Mercier , G. Ferro et al.
E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2008, Strasbourg, France
Communication dans un congrès hal-00285929 v1

Modeling of 3C-SiC Single Crystal Growth

J.M. Dedulle , Florian Mercier , D. Chaussende , M. Pons
Conférence européenne COMSOL, 2007, France. pp.8
Communication dans un congrès hal-00196662 v1

Mechanism Of Orientation Selection For The Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals On Hexagonal Basis

L. Latu-Romain , D. Chaussende , L. Rapenne , M. Pons , R. Madar
European Conference on Silicon Carbide and Related Materials, 2006, Newcastle, United Kingdom. pp.199-202
Communication dans un congrès hal-00149093 v1

Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering

Alexandre Boulle , D. Chaussende , Florine Conchon , G. Ferro , Olivier Masson
International Workshop on 3C-SiC Heteroepitaxy (HeteroSiC 07), Jun 2007, Grenoble, France
Communication dans un congrès hal-00286549 v1

Preliminary study of 3C-SiC growth from high temperature solution

Florian Mercier , D. Chaussende , J.M. Dedulle , M. Pons
Hetero'SiC'07, 2007, France. pp.2
Communication dans un congrès hal-00196665 v1

Prospects for 3C-SiC bulk crystal growth

D. Chaussende , Florian Mercier , Alexandre Boulle , Florine Conchon , M. Soueidan et al.
E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France
Communication dans un congrès hal-00285924 v1
Image document

Croissance de semi-conducteurs à grand gap

Jean-Marc Dedulle , Didier Chaussende , Romain Madar , Michel Pons , Elisabeth Blanquet et al.
CFM 2007 - 18ème Congrès Français de Mécanique, Aug 2007, Grenoble, France
Communication dans un congrès hal-03360397 v1

High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modeling

E. Blanquet , D. Chaussende , S. Nishizawa , M. Pons
European conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20
Communication dans un congrès hal-00141097 v1

Gas fed top-seeded solution growth of silicon carbide

Didier Chaussende , Roland Madar , Michel Pons
2006, pp.111-114
Communication dans un congrès hal-00133834 v1

SiC growth : evaluation and modeling

M. Pons , S. Nishizawa , P. Wellmann , E. Blanquet , J. M. Dedulle et al.
MRS Spring Meeting "B- Silicon Carbide – Materials, Processing and Devices", Apr 2006, San Francisco, United States. pp.64-77
Communication dans un congrès hal-00141104 v1

High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding

G. Chichignoud , M. Pons , E. Blanquet , D. Chaussende , M. Anikin et al.
International Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States
Communication dans un congrès hal-00149073 v1

Modèle de champ de phase pour la croissance cristalline

J.M. Dedulle , D. Chaussende , M. Pons , R. Madar
MATERIAUX 2006, 2006, France. pp.10
Communication dans un congrès hal-00196658 v1

Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism

M. Soueidan , G. Ferro , J. Stoemenos , E. K. Polychroniadis , D. Chaussende et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290
Communication dans un congrès hal-00140124 v1

In-situ observation by X-ray imaging of mass transfer in the CF-PVT growth process

L. Latu-Romain , D. Chaussende , C. Balloud , J. Camassel , Etienne Pernot et al.
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.99-102
Communication dans un congrès hal-00173466 v1

In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging

Didier Chaussende , Peter J. Wellmann , Magali Ucar , Michel Pons , Roland Madar
2006, pp.63-66
Communication dans un congrès hal-00140007 v1

Growth of AlN and AlN-SiC solid solution by sublimation method

M. Anikin , D. Chaussende , Etienne Pernot , Hervé Roussel , O. Chaix et al.
Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.1501-1504
Communication dans un congrès hal-00173468 v1
Image document

Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

L. Latu-Romain , D. Chaussende , Carole Balloud , Sandrine Juillaguet , L. Rapenne et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩
Communication dans un congrès hal-00541637 v1

Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°C

Gabriel Ferro , Davy Carole , Didier Chaussende
International conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy
Poster de conférence hal-04888078 v1

Experimental study and thermodynamic modelling of the Al-C-Mg system

Guillaume Deffrennes , Bruno Gardiola , Erwann Jeanneau , Georges Mikaelian , Benigni P. et al.
International Conference on Computer Coupling of Phase Diagrams and Thermochemistry, CALPHAD 2019, Jun 2019, Singapore, Singapore
Poster de conférence hal-04753621 v1

Silicon carbide

Didier Chaussende , Noboru Ohtani
Single Crystals of Electronic Materials, Elsevier, pp.129-179, 2019, ⟨10.1016/B978-0-08-102096-8.00005-7⟩
Chapitre d'ouvrage hal-02366922 v1
Image document

VLS growth of SiC epilayers

Gabriel Ferro , Didier Chaussende , Christophe Jacquier
M. Syväjârvi and R. Yakimova. Wide band gap materials and new developments, Research signpost, pp.91-116, 2006
Chapitre d'ouvrage hal-00140374 v1