Didier Chaussende
Présentation
Publications
Publications
2-inch SiC solution growth using SiC liner crucible fabricated by reactive infiltrationJIM Fall Meeting, The Japan Institute of Metals and Materials, Sep 2024, Osaka, Japan |
|
Screening trial of step-bunching behavior on 4H-SiC (000-1) in various solvents by interface reconstructionJIM Fall Meeting, The Japan Institute of Metals and Materials, Sep 2024, Osaka, Japan |
|
Experimental study of an electromagnetically levitated droplet of liquid metal under a superposed horizontal magnetic DC field13th PAMIR International Conference - Fundamental and Applied MHD, EuMHD; CEA IRESNE; UGA; CNRS; Grenoble INP, Sep 2024, Carry-le-Rouet, France. pp.194-199 |
|
Strong Third-order Nonlinearity in Silicon-rich Amorphous Silicon Carbide Integrated PlatformsCLEO: Applications and Technology, May 2024, Charlotte, United States. pp.JTh2A.22, ⟨10.1364/CLEO_AT.2024.JTh2A.22⟩ |
|
Nucleation and Growth Mechanisms of Polycrystalline SiGe-Based Materials By Chemical Vapor Deposition at Reduced PressurePRiME 2024, The Electrochemical Society, Oct 2024, Honolulu, HI, United States |
|
Benchmarking of HCl-Based Cyclic Deposition / Etch (CDE) and Single Deposition / Etch (DE) Processes for Selective Epitaxial Growth of SiGeC:B FilmsPRiME 2024, The Electrochemical Society, Oct 2024, Honolulu, HI, United States |
|
Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-Ray-Photoelectron spectroscopyICS-ISTDM 2023, May 2023, Como, Italy |
|
AC Calorimetry of Liquid Metals in Electromagnetic Levitation: Comparison of Procedures in Microgravity and Terrestrial Conditions:TMS 2023 Materials Research in Reduced Gravity — Thermophysical Properties, Mar 2023, San-Diego, CA, United States |
|
|
|
Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al18th International Conference on Silicon Carbide and Related Materials (ICSCRM 2019), Sep 2019, Kyoto, Japan. pp.96-101, ⟨10.4028/www.scientific.net/MSF.1004.96⟩ |
Sublimation growth of a new promising semiconductor Al4SiC4E- MRS Spring, May 2017, Strasbourg, France |
|
Optical properties of wide band gap Al4SiC4: experimental and theoretical approachesEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France |
|
Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Giardini Naxos, Italy |
|
Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiCECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩ |
|
Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solventsInternational conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩ |
|
Top seeded solution growth of 4H - SiC single crystal using graphite block with rough surfaceInternational Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy |
|
Wide optical band gap Al4SiC4European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland |
|
Ge assisted SiC epitaxial growth by CVD on SiC substrate15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩ |
|
3C-SiC heteroepitaxy on hexagonal SiC substratesEuropean Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2012, Saint Petersburg, Russia |
|
Diffuse X-Ray scattering and Monte Carlo studies of spatially correlated stacking faults in SiC2012 MRS Fall Meeting & Exhibit, Nov 2012, Boston, United States |
|
Etude structurale des dislocations dans les polytypes 4H et 3C de SiCJournées Plénières du GnR Matinex 2011, Feb 2012, Lyon, France |
|
Experimental study of defect recovery induced by swift heavy ions in 6H-SiC and 3C-SiCMRS 2012 Spring Meeting, Apr 2012, San Francisco, United States |
|
Growth of Ti3SiC2 single crystals36th International Conference and Expo on Advanced Ceramics and Composites, Jan 2012, Daytona Beach (Floride), United States |
|
Recent advances on SiC bulk growth processesConfidential, Nov 2011, Pohang, South Korea |
|
SiC and AlN growth processing : experiments and simulation.International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India |
|
Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication.International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India |
|
Initiation d'une " filière nitrures à grand gap " : croissance et caractérisation de cristaux massifs d'AlN pour les applications optoélectroniquesJournée Recherche de Grenoble INP, Feb 2011, Grenoble, France |
|
SiC bulk growth processes: achievements and next challenges2nd Annual Meeting of the SiC Research Community in Korea, Nov 2011, Seoul, South Korea |
|
Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronicsRenewable Energy 2010, Jun 2010, Yokohama, Japan |
|
|
|
Defects and Polytypism in SiC: The Role of Diffuse X-Ray Scattering2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩ |
Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the seeded growth of 3C-SiC Crystals13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.63-66, ⟨10.4028/www.scientific.net/MSF.645-648.63⟩ |
|
Vapor Phase vs. Liquid Phase: What is the Best Choice for the Growth of Bulk 3C-SiC Crystals?European Materials Research Society (E-MRS) Spring meeting, Jun 2010, Strasbourg, France |
|
SiC bulk growth technologiesWinter School on Growth and epitaxy, Jan 2010, Linköping, Sweden |
|
Overview of SiC bulk growth processesConfidential, Dec 2010, Amagasaki, Japan |
|
Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scatteringE-MRS, Jun 2010, Strasbourg, France. pp.71-74, ⟨10.1063/1.3518314⟩ |
|
Study of the spontaneous nucleation of 3C-SiC single crystals using CF-PVT technique13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.55-58, ⟨10.4028/www.scientific.net/MSF.645-648.55⟩ |
|
Silicon Carbide Growth: C/Si Ratio Evaluation and ModelingInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88 |
|
Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.987-990 |
|
Cristallogenèse des semi-conducteurs à grand gap : contexte et enjeuxLes Midis MINATEC, Jun 2009, Grenoble, France |
|
Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48 |
|
Growth of thick AlN layers by High Temperature CVDInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Otsu, Japan. pp.1269-1272 |
|
Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730 |
|
Dislocation-Induced Birefringence in Silicon Carbide7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.271-274, ⟨10.4028/www.scientific.net/MSF.615-617.271⟩ |
|
|
|
Top Seeded Solution Growth of 3C-SiC single crystals7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.41-44, ⟨10.4028/www.scientific.net/MSF.615-617.41⟩ |
|
|
Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.31-36, ⟨10.4028/www.scientific.net/MSF.615-617.31⟩ |
Comparative study of differently grown 3C-SiC single crystals with birefringence microscopyInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.71-74 |
|
Characterization of stacking faults in thick 3C-SiC crystals using high resolution diffuse X-ray scatteringE-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2008, Strasbourg, France |
|
Modeling of 3C-SiC Single Crystal GrowthConférence européenne COMSOL, 2007, France. pp.8 |
|
Mechanism Of Orientation Selection For The Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals On Hexagonal BasisEuropean Conference on Silicon Carbide and Related Materials, 2006, Newcastle, United Kingdom. pp.199-202 |
|
Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scatteringInternational Workshop on 3C-SiC Heteroepitaxy (HeteroSiC 07), Jun 2007, Grenoble, France |
|
Preliminary study of 3C-SiC growth from high temperature solutionHetero'SiC'07, 2007, France. pp.2 |
|
Prospects for 3C-SiC bulk crystal growthE-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France |
|
|
|
Croissance de semi-conducteurs à grand gapCFM 2007 - 18ème Congrès Français de Mécanique, Aug 2007, Grenoble, France |
Modèle de champ de phase pour la croissance cristallineMATERIAUX 2006, 2006, Dijon, France. pp.10 |
|
SiC growth : evaluation and modelingMRS Spring Meeting "B- Silicon Carbide – Materials, Processing and Devices", Apr 2006, San Francisco, United States. pp.64-77 |
|
High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modelingEuropean conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20 |
|
Gas fed top-seeded solution growth of silicon carbide2006, pp.111-114 |
|
High temperature processing of poly-SiC substrates from the vapor phase for wafer-bondingInternational Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States |
|
Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanismInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290 |
|
Growth of AlN and AlN-SiC solid solution by sublimation methodInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.1501-1504 |
|
In-situ observation by X-ray imaging of mass transfer in the CF-PVT growth processInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.99-102 |
|
In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging2006, pp.63-66 |
|
|
|
Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT methodInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩ |
Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°CInternational conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy |
|
Experimental study and thermodynamic modelling of the Al-C-Mg systemInternational Conference on Computer Coupling of Phase Diagrams and Thermochemistry, CALPHAD 2019, Jun 2019, Singapore, Singapore |
Silicon carbideSingle Crystals of Electronic Materials, Elsevier, pp.129-179, 2019, ⟨10.1016/B978-0-08-102096-8.00005-7⟩ |
|
|
|
VLS growth of SiC epilayersM. Syväjârvi and R. Yakimova. Wide band gap materials and new developments, Research signpost, pp.91-116, 2006 |
FORMATION OF SINGLE-CRYSTAL SILICON CARBIDEPatent n° : EP1511884. TOP. 2005 |
|
FORMATION OF SINGLE-CRYSTAL SILICON CARBIDEPatent n° : US2005257734. TOP. 2005 |
|
|
Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°C2024, pp.17-21. ⟨10.4028/p-00IvzN⟩ |
|
|
Structure and morphology evolution of concave-shaped SiC {0001} surfaces in liquid silicon2022 |