
Didier Chaussende
173
Documents
Identifiants chercheurs
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Publications
Experimental study of an electromagnetically levitated droplet of liquid metal under a superposed horizontal magnetic DC field13th PAMIR International Conference - Fundamental and Applied MHD, Sep 2024, Carry-le-Rouet, France
Communication dans un congrès
hal-04774080
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Strong Third-order Nonlinearity in Silicon-rich Amorphous Silicon Carbide Integrated PlatformsCLEO: Applications and Technology, May 2024, Charlotte, United States. pp.JTh2A.22, ⟨10.1364/CLEO_AT.2024.JTh2A.22⟩
Communication dans un congrès
hal-04800385
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Screening trial of step-bunching behavior on 4H-SiC (000-1) in various solvents by interface reconstructionJIM Fall Meeting, The Japan Institute of Metals and Materials, Sep 2024, Osaka, Japan
Communication dans un congrès
hal-04799831
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2-inch SiC solution growth using SiC liner crucible fabricated by reactive infiltrationJIM Fall Meeting, The Japan Institute of Metals and Materials, Sep 2024, Osaka, Japan
Communication dans un congrès
hal-04799833
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Nucleation and Growth Mechanisms of Polycrystalline SiGe-Based Materials By Chemical Vapor Deposition at Reduced PressurePRiME 2024, The Electrochemical Society, Oct 2024, Honolulu, HI, United States
Communication dans un congrès
hal-04799786
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Benchmarking of HCl-Based Cyclic Deposition / Etch (CDE) and Single Deposition / Etch (DE) Processes for Selective Epitaxial Growth of SiGeC:B FilmsPRiME 2024, The Electrochemical Society, Oct 2024, Honolulu, HI, United States
Communication dans un congrès
hal-04799826
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Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-Ray-Photoelectron spectroscopyICS-ISTDM 2023, May 2023, Como, Italy
Communication dans un congrès
hal-04800320
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AC Calorimetry of Liquid Metals in Electromagnetic Levitation: Comparison of Procedures in Microgravity and Terrestrial Conditions:TMS 2023 Materials Research in Reduced Gravity — Thermophysical Properties, Mar 2023, San-Diego, CA, United States
Communication dans un congrès
hal-04861711
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Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al18th International Conference on Silicon Carbide and Related Materials (ICSCRM 2019), Sep 2019, Kyoto, Japan. pp.96-101, ⟨10.4028/www.scientific.net/MSF.1004.96⟩
Communication dans un congrès
hal-02990885
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Sublimation growth of a new promising semiconductor Al4SiC4E- MRS Spring, May 2017, Strasbourg, France
Communication dans un congrès
hal-02112233
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Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiCECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩
Communication dans un congrès
hal-01936649
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Optical properties of wide band gap Al4SiC4: experimental and theoretical approachesEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01162159
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Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02016972
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Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solventsInternational conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩
Communication dans un congrès
hal-02016968
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Top seeded solution growth of 4H - SiC single crystal using graphite block with rough surfaceInternational Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02016964
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Wide optical band gap Al4SiC4European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01203372
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Ge assisted SiC epitaxial growth by CVD on SiC substrate15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩
Communication dans un congrès
hal-02025422
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Diffuse X-Ray scattering and Monte Carlo studies of spatially correlated stacking faults in SiC2012 MRS Fall Meeting & Exhibit, Nov 2012, Boston, United States
Communication dans un congrès
hal-00952309
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3C-SiC heteroepitaxy on hexagonal SiC substratesEuropean Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2012, Saint Petersburg, Russia
Communication dans un congrès
hal-00944202
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Etude structurale des dislocations dans les polytypes 4H et 3C de SiCJournées Plénières du GnR Matinex 2011, Feb 2012, Lyon, France
Communication dans un congrès
hal-00952203
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Experimental study of defect recovery induced by swift heavy ions in 6H-SiC and 3C-SiCMRS 2012 Spring Meeting, Apr 2012, San Francisco, United States
Communication dans un congrès
hal-00952235
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Growth of Ti3SiC2 single crystals36th International Conference and Expo on Advanced Ceramics and Composites, Jan 2012, Daytona Beach (Floride), United States
Communication dans un congrès
hal-00672082
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Recent advances on SiC bulk growth processesConfidential, Nov 2011, Pohang, South Korea
Communication dans un congrès
hal-00672078
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SiC and AlN growth processing : experiments and simulation.International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Communication dans un congrès
hal-00692283
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Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication.International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India
Communication dans un congrès
hal-00692280
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Initiation d'une " filière nitrures à grand gap " : croissance et caractérisation de cristaux massifs d'AlN pour les applications optoélectroniquesJournée Recherche de Grenoble INP, Feb 2011, Grenoble, France
Communication dans un congrès
hal-00672062
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SiC bulk growth processes: achievements and next challenges2nd Annual Meeting of the SiC Research Community in Korea, Nov 2011, Seoul, South Korea
Communication dans un congrès
hal-00672069
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Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the seeded growth of 3C-SiC Crystals13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.63-66, ⟨10.4028/www.scientific.net/MSF.645-648.63⟩
Communication dans un congrès
hal-00517405
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Defects and Polytypism in SiC: The Role of Diffuse X-Ray Scattering2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩
Communication dans un congrès
hal-02193824
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Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronicsRenewable Energy 2010, Jun 2010, Yokohama, Japan
Communication dans un congrès
hal-00502036
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Vapor Phase vs. Liquid Phase: What is the Best Choice for the Growth of Bulk 3C-SiC Crystals?European Materials Research Society (E-MRS) Spring meeting, Jun 2010, Strasbourg, France
Communication dans un congrès
hal-00672043
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SiC bulk growth technologiesWinter School on Growth and epitaxy, Jan 2010, Linköping, Sweden
Communication dans un congrès
hal-00671985
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Overview of SiC bulk growth processesConfidential, Dec 2010, Amagasaki, Japan
Communication dans un congrès
hal-00672047
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Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scatteringE-MRS, Jun 2010, Strasbourg, France. pp.71-74, ⟨10.1063/1.3518314⟩
Communication dans un congrès
hal-00686913
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Study of the spontaneous nucleation of 3C-SiC single crystals using CF-PVT technique13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.55-58, ⟨10.4028/www.scientific.net/MSF.645-648.55⟩
Communication dans un congrès
hal-00517395
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Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.987-990
Communication dans un congrès
hal-00426590
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Silicon Carbide Growth: C/Si Ratio Evaluation and ModelingInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88
Communication dans un congrès
hal-00173481
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Cristallogenèse des semi-conducteurs à grand gap : contexte et enjeuxLes Midis MINATEC, Jun 2009, Grenoble, France
Communication dans un congrès
hal-00671980
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Growth of thick AlN layers by High Temperature CVDInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Otsu, Japan. pp.1269-1272
Communication dans un congrès
hal-00337372
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Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48
Communication dans un congrès
hal-00390466
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Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730
Communication dans un congrès
hal-00543681
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Dislocation-Induced Birefringence in Silicon Carbide7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.271-274, ⟨10.4028/www.scientific.net/MSF.615-617.271⟩
Communication dans un congrès
hal-02890909
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Top Seeded Solution Growth of 3C-SiC single crystals7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.41-44, ⟨10.4028/www.scientific.net/MSF.615-617.41⟩
Communication dans un congrès
hal-00426587
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Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.31-36, ⟨10.4028/www.scientific.net/MSF.615-617.31⟩
Communication dans un congrès
hal-00389062
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Comparative study of differently grown 3C-SiC single crystals with birefringence microscopyInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.71-74
Communication dans un congrès
hal-00337375
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Characterization of stacking faults in thick 3C-SiC crystals using high resolution diffuse X-ray scatteringE-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2008, Strasbourg, France
Communication dans un congrès
hal-00285929
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Modeling of 3C-SiC Single Crystal GrowthConférence européenne COMSOL, 2007, France. pp.8
Communication dans un congrès
hal-00196662
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Mechanism Of Orientation Selection For The Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals On Hexagonal BasisEuropean Conference on Silicon Carbide and Related Materials, 2006, Newcastle, United Kingdom. pp.199-202
Communication dans un congrès
hal-00149093
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Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scatteringInternational Workshop on 3C-SiC Heteroepitaxy (HeteroSiC 07), Jun 2007, Grenoble, France
Communication dans un congrès
hal-00286549
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Preliminary study of 3C-SiC growth from high temperature solutionHetero'SiC'07, 2007, France. pp.2
Communication dans un congrès
hal-00196665
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Prospects for 3C-SiC bulk crystal growthE-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France
Communication dans un congrès
hal-00285924
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Croissance de semi-conducteurs à grand gapCFM 2007 - 18ème Congrès Français de Mécanique, Aug 2007, Grenoble, France
Communication dans un congrès
hal-03360397
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High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modelingEuropean conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20
Communication dans un congrès
hal-00141097
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Gas fed top-seeded solution growth of silicon carbide2006, pp.111-114
Communication dans un congrès
hal-00133834
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SiC growth : evaluation and modelingMRS Spring Meeting "B- Silicon Carbide – Materials, Processing and Devices", Apr 2006, San Francisco, United States. pp.64-77
Communication dans un congrès
hal-00141104
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High temperature processing of poly-SiC substrates from the vapor phase for wafer-bondingInternational Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States
Communication dans un congrès
hal-00149073
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Modèle de champ de phase pour la croissance cristallineMATERIAUX 2006, 2006, France. pp.10
Communication dans un congrès
hal-00196658
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Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanismInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290
Communication dans un congrès
hal-00140124
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In-situ observation by X-ray imaging of mass transfer in the CF-PVT growth processInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.99-102
Communication dans un congrès
hal-00173466
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In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging2006, pp.63-66
Communication dans un congrès
hal-00140007
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Growth of AlN and AlN-SiC solid solution by sublimation methodInternatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.1501-1504
Communication dans un congrès
hal-00173468
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Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT methodInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩
Communication dans un congrès
hal-00541637
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Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°CInternational conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy
Poster de conférence
hal-04888078
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Experimental study and thermodynamic modelling of the Al-C-Mg systemInternational Conference on Computer Coupling of Phase Diagrams and Thermochemistry, CALPHAD 2019, Jun 2019, Singapore, Singapore
Poster de conférence
hal-04753621
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Silicon carbideSingle Crystals of Electronic Materials, Elsevier, pp.129-179, 2019, ⟨10.1016/B978-0-08-102096-8.00005-7⟩
Chapitre d'ouvrage
hal-02366922
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VLS growth of SiC epilayersM. Syväjârvi and R. Yakimova. Wide band gap materials and new developments, Research signpost, pp.91-116, 2006
Chapitre d'ouvrage
hal-00140374
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FORMATION OF SINGLE-CRYSTAL SILICON CARBIDEPatent n° : US2005257734. TOP. 2005
Brevet
hal-00386316
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FORMATION OF SINGLE-CRYSTAL SILICON CARBIDEPatent n° : EP1511884. TOP. 2005
Brevet
hal-00386315
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Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°C2024, pp.17-21. ⟨10.4028/p-00IvzN⟩
Autre publication scientifique
hal-04725670
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Structure and morphology evolution of concave-shaped SiC {0001} surfaces in liquid silicon2022
Pré-publication, Document de travail
hal-03588441
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