Enora Vuillermet
- Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Domaines de recherche
Compétences
Publications
Publications
Correlative Near-Field Characterizations with KPFM, sMIM and SCM to Characterize the Geometry of a N-Channel Failed SiC JFETISTFA 2025, Nov 2025, Pasadena, France. pp.404-410, ⟨10.31399/asm.cp.istfa2025p0404⟩ |
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Physical and electrical characterization of wide band gap for power electronic applicationSociété Française de Physique, Jun 2025, Troyes, France |
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Raman and photoluminescence characterization of β-Ga2O3 for power electronic applicationWORKSHOP ON GALLIUM OXIDE AND RELATED MATERIALS, Sep 2025, Grenoble, France |
Integration of micro-fabricated thermal flow rate sensors in a 4H-SiC substrate passivated by a MPECVD-grown diamond layerThe 34th International Conference on Diamond and Carbon Materials (ICDCM 2024), Sep 2024, Dresde, Germany |
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SiC plasma etching technology processes for power and optoelectronic devicesPESM 2024, IMEC Belgium, Jun 2024, Leuven (BE), Belgium |
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Technology development for nano-pillars fabrication in silicon carbide to enhance light collection from color centersInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States |
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Near-field characterization of Nb2CTx MXene by non-destructive nearfield microscopySPIE OPTO, Jan 2024, San Francisco California, United States. pp.33, ⟨10.1117/12.3009437⟩ |
La gravure plasma, une étape critique dans la technologie SiC. Mécanismes physico-chimiques et applicationsJournées Renatech Litho/Gravure 2024, Jun 2024, Valbonne, France |
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Recrystallization of thin 4H-SiC films deposited by PVD techniques, a way for new emerging fieldsC'Nano 2023: The Nanoscience meeting, Centre national de compétences en Nanosciences, Mar 2023, Poitiers, France |
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Cathodoluminescence study of silicon vacancies color centers generated by ion implantation in 6H-SiCIEEE 2023 International semiconductor conference (CAS) - 46th edition, NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES - IMT Bucharest; IEEE – Electron Devices Society, Oct 2023, Sinaia (Romania), Romania. pp.135-138, ⟨10.1109/CAS59036.2023.10303651⟩ |
Caractérisation du dopage de dispositifs de puissance en 4H-SiC par KPFM et spectroscopie µ-Raman24ème Forum des microscopies à sonde locale, Apr 2023, Obernai, France |
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Surface nano-structuration of 4H-SiC by controlled high-temperature annealingThe 6th International Workshop on Ultraviolet Materials and Devices (IWUMD 2023), Jun 2023, Metz, France |
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Integration of bright color centers into arrays of silicon carbide nanopillars2025 |