Etienne Gheeraert
Publications
Publications
Towards the implementation of diamond power devices in power converters and measurements of their switching lossesMRS Spring Meeting 2021, Apr 2021, Seattle WA, United States |
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Comparative study of two Atomic Layer Etching processes for GaN19th International Conference on Atomic layer Deposition (ALD2019), Jul 2019, Bellevue WA, United States |
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Cyclic BCl3-based plasma treatments for enhancing surface quality of (010) β-Ga2O3 substratesJoint Conference of XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) and the 10th International Conference on Reactive Plasmas (ICRP-10), Jul 2019, Sapporo, Japan |
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Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissanceSymposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France |
Lateral diamond Schottky diodes on heteroepitaxial substrateSBDD XXIII Hasselt Diamond Workshop, Mar 2018, Hasselt, Belgium |
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200V, 4MV/cm lateral diamond MOSFET2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩ |
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La diode Schottky en diamant : le présent et le futurSymposium de Genie Electrique, Jun 2016, Grenoble, France |
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Simulation numérique et caractérisation de composants de puissance en diamantSymposium de Genie Electrique, Jun 2016, Grenoble, France |
Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States |
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Enabling high switching speed for diamond power transistors3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France |
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Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamondSBDD 2014, Feb 2014, Hasselt, Belgium |
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Diamond as substrate for 3C-SiC growth: A TEM studySBDD, 2014, Hasselt, Belgium |
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Parameter adjustement for diamond electronic devices simulationXVIIIth SBDD 2013, 2013, Hasselt, Belgium |
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Diamond bipolar device simulationIEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States |
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Diamond power devices: status of delta-doped transistorJapanese Society of Applied Physics and Materials Research Society joint meeting, Sep 2013, Kyoto, Japan |
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Models and parameters study for diamond electronic devices simulations74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan |
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Metal oxide semiconductor structure using oxygen-terminated diamond.MRS Fall Meeting 2013 : Symposium S - Diamond Electronics and Biotechnology Fundamentals to Applications VII in Boston, US, Dec 2013, Boston, United States |
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Recent progress of diamond device toward power applicationEXMATEC 2012 : 11th Expert Evaluation and Control of Compound Semicon- ductor Materials and Technologies conference, Porquerolles Islands, France., May 2012, Porquerolles, France |
Diamond Electronic DevicesInternational Union of Materials Research Societies - International Conference on Electronic Materials, Sep 2012, Yokohama, Japan |
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Diamond delta-FETMaterials Research Society Fall Meeting, Nov 2011, Boston, United States |
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Delta doping for advanced diamond devicesXXth International Materials Research Congress, Aug 2011, Cancun, Mexico |
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Behavior of CVD diamond-based TL dosimeters in radiotherapy environments using photon and electron beams from treatment accelerators21st Conference on Diamond, Diamond like Materials, Carbon Nanotubes and Nitrides, Sep 2010, Budapest, Hungary |
Nanocrystals growth on carbon nanotubesEuropean Materials Research Society Spring Meeting, 2010, Strasbourg, France. pp.141 |
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The Nickel centre in diamond21th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Sep 2010, Budapest, Hungary |
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Diamond for spintronicsNIMS-AIST joint workshop, 2009, Tsukuba, Japan |
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Performance of irradiated CVD diamond micro-strip sensorsInternational Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices 3, Jun 2000, Firenze, Italy. pp.706-712 |
Pulse height distribution and radiation tolerance of CVD diamond detectorsInternational workshop on vertex detectors 8, Jun 1999, Texel, Netherlands. pp.244-250 |
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CVD diamond pixel detectors for LHC experimentsInternational Conference On Advanced Technology And Particle Physics 6, Oct 1998, Villa Olmo, Italy. pp.497-504 |
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CVD diamond detectors for ionizing radiationInternational workshop on vertex detectors, Sep 1998, Santorini, Greece. pp.194-201 |
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Review of the development of diamond radiation sensorsInternational Workshop on Gallium Arsenide Detectors and Related Compounds N0 6, Jun 1998, Pruhonice - Prague, Czech Republic. pp.131-145 |
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Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHCInternational conference on radiation effects on semiconductor materials, detectors and devices N0 2, Mar 1998, Florence, Italy. pp.173-180 |
Recent results on CVD diamond radiation sensorsPisa meeting on advanced detectors N0 7, May 1997, La Biodola, Isola D'Elba, Italy. pp.264-270 |
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Status of diamond particle detectors6th international workshop on vertex detectors, Aug 1997, Rio De Janeiro, Brazil. pp.196-202 |
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Development of Atomic Layer Etching (ALEt) for GaN-based materialsInternational Workshop on Nitride Semiconductors, Nov 2018, Kanazawa, Japan |
Power electronic devices performances based on diamond propertiesS. Koizumi; H. Umezawa; J. Pernot; M. Suzuki. Power Electronics Device Applications of Diamond Semiconductors, Woodhead Publishing Elsevier, 2018, 978-0-08-102183-5 |
Diamond MIS TransistorUnited States, Patent n° : US11569381 (B2). 2023 |
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Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films.2004 |