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A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy
Georgio El-Zammar
,
Arnaud Yvon
,
Wahid Khalfaoui
,
Maher Nafouti
,
Frédéric Cayrel
Article dans une revue
hal-02140135v1
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Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layer
Wahid Khalfaoui
,
Thomas Oheix
,
Georgio El-Zammar
,
Roland Benoit
,
Frédéric Cayrel
Article dans une revue
hal-01721021v1
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Investigation of ferromagnetic heterogeneities in La 0.7 Sr 0.3 MnO 3 thin films
Silvana Mercone
,
B Belmeguenai
,
M Malo
,
F. Ott
,
Frédéric Cayrel
Article dans une revue
hal-01862707v1
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Optimization of VLS Growth Process for 4H-SiC P/N Junctions
Selsabil Sejil
,
Mihai Lazar
,
Frédéric Cayrel
,
Davy Carole
,
Christian Brylinski
Article dans une revue
hal-01388031v1
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Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors
Abhishek Singh Dahiya
,
Charles Opoku
,
Frédéric Cayrel
,
Damien Valente
,
Guylaine Poulin-Vittrant
Article dans une revue
hal-02069635v1
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Porosity and Thickness Characterization of Porous Si and Oxidized Porous Si layers – an ultraviolet-visible-mid Infrared Ellipsometry Study
Balint Fodor
,
Emil Agocs
,
Benjamin Bardet
,
Thomas Defforge
,
Frederic Cayrel
Article dans une revue
hal-01784759v1
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Single-crystalline ZnO sheet Source-Gated Transistors
Abhishek Singh Dahiya
,
Charles Opoku
,
R A Sporea
,
Balasubramaniam Sarvankumar
,
G. Poulin-Vittrant
Article dans une revue
hal-02077037v1
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Zinc Oxide Sheet Field-Effect Transistors
Abhishek Singh Dahiya
,
Charles Opoku
,
Christopher Oshman
,
Guylaine Poulin-Vittrant
,
Frédéric Cayrel
Article dans une revue
hal-01831015v1
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Fabrication of Field-Effect Transistors and Functional Nanogenerators Using Hydrothermally Grown ZnO Nanowires
Charles Opoku
,
Abhishek Singh Dahiya
,
Frédéric Cayrel
,
Guylaine Poulin-Vittrant
,
Daniel Alquier
Article dans une revue
hal-01831012v1
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Surface State of GaN after Rapid-Thermal-Annealing Using AlN Cap-Layer
Georgio El-Zammar
,
Wahid Khalfaoui
,
Thomas Oheix
,
Arnaud Yvon
,
Emmanuel Collard
Article dans une revue
hal-01784768v1
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Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires
Charles Opoku
,
Abhishek Singh Dahiya
,
Christopher Oshman
,
Christophe Daumont
,
Frédéric Cayrel
Article dans une revue
hal-02077067v1
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Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures
Charles Opoku
,
Abhishek Singh Dahiya
,
Christopher Oshman
,
Frédéric Cayrel
,
Guylaine Poulin-Vittrant
Article dans une revue
hal-02092564v1
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Characterization of In-Depth Cavity Distribution after Thermal Annealing of Helium-Implanted Silicon and Gallium Nitride
Balint Fodor
,
Frédéric Cayrel
,
E. Agocs
,
Daniel Alquier
,
M. Fried
Article dans une revue
hal-01784778v1
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Controlled Growth of 1D and 2D ZnO Nanostructures on 4H-SiC Using Au Catalyst
Abhishek Singh Dahiya
,
Charles Opoku
,
Daniel Alquier
,
Guylaine Poulin-Vittrant
,
Frederic Cayrel
Article dans une revue
hal-01831021v1
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Systematic Study of Anodic Etching of Highly Doped N-Type 4H-SiC in Various HF Based Electrolytes
Gaël Gautier
,
Jérôme Biscarrat
,
Damien Valente
,
Thomas Defforge
,
A. Gary
Article dans une revue
hal-01810897v1
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Si Implanted Reactivation in GaN Grown on Sapphire Using AlN and Oxide Cap Layers
Frédéric Cayrel
,
Anne-Elisabeth Bazin
,
Mohamed Lamhamdi
,
Y. Benchanaa
,
Olivier Ménard
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 272, pp.137-140. ⟨10.1016/j.nimb.2011.01.050⟩
Article dans une revue
hal-01810910v1
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Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces
Gaël Gautier
,
Frédéric Cayrel
,
Marie Capelle
,
Jérôme Billoue
,
Xi Song
Article dans une revue
hal-01810904v1
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Carrier Profiling in Si-Implanted Gallium Nitride by Scanning Capacitance Microscopy
Mohamed Lamhamdi
,
Frédéric Cayrel
,
Anne-Elisabeth Bazin
,
Emmanuel Collard
,
Daniel Alquier
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 275, pp.37-40. ⟨10.1016/j.nimb.2011.12.003⟩
Article dans une revue
hal-01810912v1
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RF Planar Inductor Electrical Performances on N-Type Porous 4H Silicon Carbide
Gaël Gautier
,
Marie Capelle
,
Jérôme Billoue
,
Frédéric Cayrel
,
Patrick Poveda
Article dans une revue
hal-01810907v1
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TiAl Ohmic Contact on GaN, in Situ High or Low Doped or Si Implanted, Epitaxially Grown on Sapphire or Silicon
Frédéric Cayrel
,
Olivier Ménard
,
Arnaud Yvon
,
Nicolas Thierry-Jébali
,
Christian Brylinsky
Article dans une revue
hal-01810914v1
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Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates
David Schenk
,
Alexis Bavard
,
Eric Frayssinet
,
Xi Song
,
Frédéric Cayrel
Article dans une revue
hal-01810916v1
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Recent Progresses in GaN Power Rectifier
Daniel Alquier
,
Frédéric Cayrel
,
Olivier Ménard
,
Anne-Elisabeth Bazin
,
Arnaud Yvon
Article dans une revue
hal-01810909v1
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Low temperature (down to 450° C) annealed TiAl contacts on N-type gallium nitride characterized by differential scanning calorimetry
N. Thierry-Jebali
,
O. Menard
,
R. Chiriac
,
E. Collard
,
C. Brylinski
physica status solidi (c), 2011, 8 (2), pp.447--449
Article dans une revue
hal-00763471v1
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