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Boron-SiC diffusion couple : thermodynamics and reactivity at high temperature
Y. Benamra
,
B. Gardiola
,
F. Robaut
,
O. Dezellus
,
F. Cauwet
et al.
Article dans une revue
hal-05306800v1
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Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport
Gabriel Ferro
,
Alexandre Jaud
,
Laurent Auvray
,
Abdelkarim Kahouli
,
Tony Abi-Tannous
et al.
Article dans une revue
hal-01615173v1
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Investigation of the localization phenomenon in quaternary BInGaAs/GaAs for optoelectronic applications
Tarek Hidouri
,
Radhia Hamila
,
Ibtissem Fraj
,
Faouzi Saidi
,
Hassen Maaref
et al.
Article dans une revue
istex
hal-02285807v1
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Highly Mg-doped GaN dots and films grown by VLS transport at low temperature
Gabriel Ferro
,
Alexandre Jaud
,
Laurent Auvray
,
Abdelkarim Kahouli
,
Tony Abi-Tannous
et al.
Article dans une revue
hal-01615198v1
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LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well
T. Hidouri
,
F. Saidi
,
H. Maaref
,
Ph. Rodriguez
,
Laurent Auvray
Article dans une revue
istex
hal-02285798v1
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Structural and optical study of BInGaAs/GaAs quantum wells grown by MOVPE emitting above 1.1eV
Radhia Hamila
,
Faouzi Saidi
,
Philippe Rodriguez
,
Laurent Auvray
,
Hassen Maaref
Article dans une revue
hal-02285769v1
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Impact of photoluminescence temperature and growth parameter on the exciton localized in B x Ga 1-x As/GaAs epilayers grown by MOCVD
Tarek Hidouri
,
Faouzi Saidi
,
Hassen Maaref
,
Philippe Rodriguez
,
Laurent Auvray
Article dans une revue
hal-02285794v1
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Localized state exciton model investigation of B-content effect on optical properties of BGaAs/GaAs epilayers grown by MOCVD
Tarek Hidouri
,
Faouzi Saidi
,
H Maaref
,
Philippe Rodriguez
,
Laurent Auvray
Article dans une revue
hal-02285788v1
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Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model
Soufiene Ilahi
,
M. Baira
,
F. Saidi
,
N. Yacoubi
,
Laurent Auvray
et al.
Journal of Alloys and Compounds, 2013, 581, pp.358-362
Article dans une revue
hal-01116060v1
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Shift of the gap energy and thermal conductivity in BGaAs/GaAs alloys
Soufiene Ilahi
,
F. Saidi
,
R. Hamila
,
N. Yacoubi
,
H. Maaref
et al.
Physica B: Condensed Matter, 2013, 421, pp.105-109
Article dans une revue
hal-01116051v1
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Photothermal deflection spectroscopy (PDS) investigation of optical and thermal properties of BGaAs/GaAs alloys
Soufiene Ilahi
,
F. Saidi
,
R. Hamila
,
N. Yacoubi
,
Laurent Auvray
et al.
Current Applied Physics, 2013, 13, pp.610-613
Article dans une revue
hal-01116046v1
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Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method
R. Hamila
,
F. Saidi
,
H. Maaref
,
P. Rodriguez
,
Laurent Auvray
Journal of Applied Physics, 2012, 112, pp.063109/1-063109/5
Article dans une revue
hal-01116036v1
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Buried selective growth of p-doped SiC by VLS epitaxy
Davy Carole
,
Stéphane Berckmans
,
Arthur Vo-Ha
,
Mihai Lazar
,
Dominique Tournier
et al.
Article dans une revue
hal-00803061v1
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Investigation of 3C-SiC growth on Si(111) by vapor-liquid-solid transport using a SiGe liquid phase
S. Berckmans
,
Laurent Auvray
,
G. Ferro
,
F. Cauwet
,
V. Soulière
et al.
Journal of Crystal Growth, 2012, 354, pp.119-128
Article dans une revue
hal-01116034v1
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Micropipe-induced birefringence in 6H silicon carbide
T. Ouisse
,
D. Chaussende
,
L. Auvray
Article dans une revue
istex
hal-01067400v1
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Structural and optical study of BxInyGa1-x-yAs /GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
F. Saidi
,
R. Hamila
,
H. Maaref
,
P. Rodriguez
,
Laurent Auvray
et al.
Journal of Alloys and Compounds, 2010, 491, pp.45
Article dans une revue
hal-01116023v1
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Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD
R. Hamila
,
F. Saidi
,
P. Rodriguez
,
Laurent Auvray
,
Y. Monteil
et al.
Article dans une revue
istex
hal-01116030v1
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Clustering effects in optical properties of BGaAs/GaAs epilayers
R. Hamila
,
F. Saidi
,
A. Fouzri
,
Laurent Auvray
,
Y. Monteil
et al.
Journal of Luminescence, 2009, 129, pp.1010-1014
Article dans une revue
hal-01118207v1
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Study by AES and EELS spectroscopies of antimony and phosphorous evaporated on massive indium and on cleaned InP
Zoubida Lounis
,
M. Bouslama
,
N. Berrouachedi
,
C. Jardin
,
Laurent Auvray
et al.
Vacuum, 2008, 82, pp.529-534
Article dans une revue
hal-01118194v1
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Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by MOVPE
P. Rodriguez
,
Laurent Auvray
,
A. Favier
,
J. Dazord
,
Y. Monteil
Thin Solid Films, 2008, 516, pp.8424-8430
Article dans une revue
hal-01118198v1
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Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE
P. Rodriguez
,
Laurent Auvray
,
H. Dumont
,
J. Dazord
,
Y. Monteil
Journal of Crystal Growth, 2007, 298, pp.81-84
Article dans une revue
hal-01118219v1
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The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation.
A Nouri
,
Zoubida Lounis
,
A. Ouerdane
,
M. Ghaffour
,
M. Bouadi
et al.
Vacuum, 2007, 81, pp.979-984
Article dans une revue
hal-01118182v1
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Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
Guy Chichignoud
,
Laurent Auvray
,
Elisabeth Blanquet
,
Mikhail Anikin
,
Etienne Pernot
et al.
Article dans une revue
hal-00417197v1
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Investigation of both interface states spectrum and deep oxide states from differential isothermal transient spectroscopy
P. Muret
,
Laurent Auvray
,
O. Salicio
,
C. Dubourdieu
Article dans une revue
istex
hal-05313966v1
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Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
Peter J. Wellmann
,
Ralf Müller
,
Michel Pons
,
Aurélie Thuaire
,
Alexandre Crisci
et al.
Article dans une revue
hal-00334316v1
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Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications
Didier Chaussende
,
Magali Ucar
,
Laurent Auvray
,
Francis Baillet
,
Michel Pons
et al.
Article dans une revue
hal-00118809v1
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Optical mapping of aluminum doped p-type SiC wafers
Peter J. Wellmann
,
T. Straubinger
,
U. Künecke
,
Ralf Müller
,
S. Sakwe
et al.
Article dans une revue
istex
hal-00386442v1
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Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
C. Dubourdieu
,
Hervé Roussel
,
Carmen Jiménez
,
M. Audier
,
J. P. Senateur
et al.
Article dans une revue
hal-00012501v1
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Electrical characterisation of SrTiO3 thin films deposited on Si(100) substrate by liquid injection MOCVD
J. Legrand
,
S. Lhostis
,
Y. Chang
,
L. Militaru
,
C. Lamard
et al.
Microelectronic Engineering, 2004, 72, pp.310
Article dans une revue
hal-00135402v1
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Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method
Didier Chaussende
,
Carole Balloud
,
Laurent Auvray
,
Francis Baillet
,
Marcin Zielinski
et al.
Article dans une revue
hal-00417942v1
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Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine
H. Dumont
,
Laurent Auvray
,
J. Dazord
,
Y. Monteil
,
O. Marty
et al.
Thin Solid Films, 2004, 458, pp.154-160
Article dans une revue
hal-01118229v1
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Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
Laurent Auvray
,
Didier Chaussende
,
Francis Baillet
,
Ludovic Charpentier
,
Michel Pons
et al.
Article dans une revue
hal-05313999v1
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|
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Electrical characterization of SrTiO3 thin films deposited on Si(001) substrate by liquid injection MOCVD
J. Legrand
,
S. Lhostis
,
Y. Chang
,
L. Militaru
,
C. Lamard
et al.
Article dans une revue
istex
hal-05313915v1
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Optical investigation of GaAs1-xNx/GaAs heterostructure properties
F. Saidi
,
F. Hassen
,
H. Maaref
,
Laurent Auvray
,
H. Dumont
et al.
physica status solidi (b), 2004, 241, pp.428-433
Article dans une revue
hal-01118237v1
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Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs1-xNx/GaAs
H. Dumont
,
Laurent Auvray
,
Y. Monteil
,
O. Marty
,
G. Patriarche
Physica Status Solidi C: Current Topics in Solid State Physics, 2003, 0, pp.2749
Article dans une revue
hal-01118294v1
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Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures
H. Dumont
,
Laurent Auvray
,
Y. Monteil
,
F. Saidi
,
F. Hassen
et al.
Optical Materials, 2003, 24, pp.303-308
Article dans une revue
hal-01118285v1
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Nitrogen enrichment at the GaAs1-xNx/GaAs(001) interface : microstructure and optical properties
H. Dumont
,
Laurent Auvray
,
J. Dazord
,
Y. Monteil
,
C. Bondoux
et al.
Journal of Crystal Growth, 2003, 248, pp.441-445
Article dans une revue
hal-01118282v1
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Optical signature of atomic ordering in In0,53Ga0,47As/InP : photoluminescence properties and IR response
H. Dumont
,
Laurent Auvray
,
Y. Monteil
Optical Materials, 2003, 24, pp.309
Article dans une revue
hal-01118288v1
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Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD
F. Saidi
,
F. Hassen
,
H. Maaref
,
Laurent Auvray
,
H. Dumont
et al.
Materials Science and Engineering: C, 2002, 21, pp.245-249
Article dans une revue
hal-01118277v1
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Microscopic structure and optical properties of GaAs1-xNx/GaAs (001) interface grown by metalorganic vapor phase epitaxy
H. Dumont
,
Laurent Auvray
,
Y. Monteil
,
C. Bondoux
,
L. Largeau
et al.
Applied Physics Letters, 2002, 80, pp.2460-2462
Article dans une revue
hal-01118246v1
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Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE
H. Dumont
,
Laurent Auvray
,
Y. Monteil
,
Jean Bouix
Materials Science and Engineering: B, 2001, 84, pp.258-264
Article dans une revue
hal-01118251v1
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Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP (001) step-bunched surfaces
V. Soulière
,
H. Dumont
,
Laurent Auvray
,
Y. Monteil
Journal of Crystal Growth, 2001, 226, pp.31-38
Article dans une revue
hal-01118249v1
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MOVPE growth of GaAsN : surface study by AFM and optical properties
Laurent Auvray
,
H. Dumont
,
J. Dazord
,
Y. Monteil
,
Jean Bouix
et al.
Materials Science in Semiconductor Processing, 2000, 3, pp.505-509
Article dans une revue
hal-01118272v1
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AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE
Laurent Auvray
,
H. Dumont
,
J. Dazord
,
Y. Monteil
,
Jean Bouix
et al.
Journal of Crystal Growth, 2000, 221, pp.475-480
Article dans une revue
hal-01118274v1
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Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
H. Dumont
,
Laurent Auvray
,
A. Ougazzaden
,
V. Soulière
,
J. Dazord
et al.
Journal of Crystal Growth, 1999, 197, pp.755-761
Article dans une revue
hal-01118266v1
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|
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Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine
H. Dumont
,
Laurent Auvray
,
J. Dazord
,
Y. Monteil
,
Jean Bouix
et al.
Applied Surface Science, 1999, 150, pp.161-170
Article dans une revue
hal-01118255v1
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|
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Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates
H. Dumont
,
Laurent Auvray
,
J. Dazord
,
V. Soulière
,
Y. Monteil
Journal of Applied Physics, 1999, 85, pp.7185-7190
Article dans une revue
hal-01118261v1
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|
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Surface morphology, electrical and optical properties of InGaAs/InP grown by MOVPE using trimethylarsine and arsine
H. Dumont
,
Laurent Auvray
,
J. Dazord
,
Y. Monteil
,
Jean Bouix
et al.
Journal of Crystal Growth, 1999, 204, pp.1-9
Article dans une revue
hal-01118258v1
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