Laurent Auvray
- Laboratoire des Multimatériaux et Interfaces (LMI)
- Université Claude Bernard Lyon 1 (UCBL)
Présentation
I currently work, as an associate professor, in the "Thin Layers" team of the Multimaterials and Interfaces Laboratory (LMI), located in Villeurbanne, France.
My research is mainly focused on the growth and the characterization of epitaxial layers of wide bandgap semi-conductors (SiC and GaN), for applications in microelectronics. We have developed original approaches based on Vapor-Liquid-Solid mechanisms, especially to design peripheral protections of SiC or GaN-based power devices. Currently, we show an interest in new semi-conducting carbides, compatible with the established SiC technology. Recently, we demonstrated for the first time the heteroepitaxy of boron carbide on both polarities of 4H-SiC. I am author or co-author of about 70 scientific publications.
Moreover, I am teaching general and inorganic chemistry, thermochemistry and corrosion.
Publications
Publications
Effet de la polarité du substrat 4H-SiC sur la croissance hétéroépitaxiale du carbure de bore BxC par CVDConférence MATEPI 2023, Jean-Noël AQUA, Jul 2023, Paris, France
Communication dans un congrès
hal-04884322
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Réactivité et couple de diffusion dans le système B-C-Si à haute températureMATERIAUX 2022, Oct 2022, Lille, France
Communication dans un congrès
hal-04753534
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Epitaxial Growth of Boron Carbide on 4H-SiCInternational conference on silicon carbide and related materials 2022, Sep 2022, DAVOS, Switzerland
Communication dans un congrès
hal-04877889
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Buried selective growth of p-doped SiC by VLS epitaxyCSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00747294
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Epitaxial growth of 3C-SiC onto silicon substrate by VLS transport using CVD-grown 3C-SiC seeding layerHeteroSiC–WASMPE, Jun 2011, Tours, France
Communication dans un congrès
hal-01116084
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Investigation of the growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) transportECSCRM 2010, Aug 2010, Oslo, Norway. pp.99-102
Communication dans un congrès
hal-01116070
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On the characterization of boron in BGaAs nano-films using IBA techniqueMediterranean Conference on Innovative Materials and Applications (CIMA), Mar 2011, Beyrouth, Lebanon. pp.314-317, ⟨10.4028/www.scientific.net/AMR.324.314⟩
Communication dans un congrès
hal-01116081
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The perovskite SrTiO3 on Si/SiO2 by liquid injection MOCVDECS transactions, 2009, France. pp.669-684
Communication dans un congrès
hal-00604265
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Dislocation-Induced Birefringence in Silicon Carbide7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.271-274, ⟨10.4028/www.scientific.net/MSF.615-617.271⟩
Communication dans un congrès
hal-02890909
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MOVPE strip-like self-organization of InAs grown on InP vicinal surfacesMRS Spring Meeting, Apr 2000, San Francisco, United States. pp.59
Communication dans un congrès
hal-01118304
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Nitrogen incorporation and growth kinetics of GaAsN/GaAs epilayers grown by MOVPEMRS Spring Meeting, Apr 2000, San Francisco, United States. pp.189
Communication dans un congrès
hal-01118308
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Polarity Effect on the Heteroepitaxial Growth of BxС On 4H-SiС by CVDInternational conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy
Poster de conférence
hal-04872652
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Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding LayerEuropean Conference on Silicon Carbide and Related Materials, Aug 2010, Oslo (Norway), Norway. Materials Science Forum, 711, pp.35-39, 2012, ⟨10.4028/www.scientific.net/MSF.711.35⟩
Proceedings/Recueil des communications
hal-05314242
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