Laurent Auvray

61
Documents
Affiliations actuelles
  • Laboratoire des Multimatériaux et Interfaces (LMI)
  • Université Claude Bernard Lyon 1 (UCBL)
Identifiants chercheurs

Présentation

I currently work, as an associate professor, in the "Thin Layers" team of the Multimaterials and Interfaces Laboratory (LMI), located in Villeurbanne, France.

My research is mainly focused on the growth and the characterization of epitaxial layers of wide bandgap semi-conductors (SiC and GaN), for applications in microelectronics. We have developed original approaches based on Vapor-Liquid-Solid mechanisms, especially to design peripheral protections of SiC or GaN-based power devices. Currently, we show an interest in new semi-conducting carbides, compatible with the established SiC technology. Recently, we demonstrated for the first time the heteroepitaxy of boron carbide on both polarities of 4H-SiC. I am author or co-author of about 70 scientific publications.

Moreover, I am teaching general and inorganic chemistry, thermochemistry and corrosion.

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Publications

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Boron-SiC diffusion couple : thermodynamics and reactivity at high temperature

Y. Benamra , B. Gardiola , F. Robaut , O. Dezellus , F. Cauwet et al.
Journal of Phase Equilibria and Diffusion, 2025, ⟨10.1007/s11669-025-01212-4⟩
Article dans une revue hal-05306800 v1

Highly Mg-doped GaN dots and films grown by VLS transport at low temperature

Gabriel Ferro , Alexandre Jaud , Laurent Auvray , Abdelkarim Kahouli , Tony Abi-Tannous et al.
Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600428⟩
Article dans une revue hal-01615198 v1

Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport

Gabriel Ferro , Alexandre Jaud , Laurent Auvray , Abdelkarim Kahouli , Tony Abi-Tannous et al.
Journal of Crystal Growth, 2017, 467, pp.18 - 28. ⟨10.1016/j.jcrysgro.2017.03.018⟩
Article dans une revue hal-01615173 v1

Investigation of the localization phenomenon in quaternary BInGaAs/GaAs for optoelectronic applications

Tarek Hidouri , Radhia Hamila , Ibtissem Fraj , Faouzi Saidi , Hassen Maaref et al.
Superlattices and Microstructures, 2017, 103, pp.386-394. ⟨10.1016/j.spmi.2016.10.021⟩
Article dans une revue hal-02285807 v1

LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well

T. Hidouri , F. Saidi , H. Maaref , Ph. Rodriguez , Laurent Auvray
Optical Materials, 2016, 62, pp.267-272. ⟨10.1016/j.optmat.2016.10.010⟩
Article dans une revue hal-02285798 v1

Impact of photoluminescence temperature and growth parameter on the exciton localized in B x Ga 1-x As/GaAs epilayers grown by MOCVD

Tarek Hidouri , Faouzi Saidi , Hassen Maaref , Philippe Rodriguez , Laurent Auvray
Optical Materials, 2016, 60, pp.487-494. ⟨10.1016/j.optmat.2016.08.029⟩
Article dans une revue hal-02285794 v1

Structural and optical study of BInGaAs/GaAs quantum wells grown by MOVPE emitting above 1.1eV

Radhia Hamila , Faouzi Saidi , Philippe Rodriguez , Laurent Auvray , Hassen Maaref
Microelectronic Engineering, 2016, 149, pp.5-8. ⟨10.1016/j.mee.2015.08.013⟩
Article dans une revue hal-02285769 v1

Localized state exciton model investigation of B-content effect on optical properties of BGaAs/GaAs epilayers grown by MOCVD

Tarek Hidouri , Faouzi Saidi , H Maaref , Philippe Rodriguez , Laurent Auvray
Vacuum, 2016
Article dans une revue hal-02285788 v1

Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model

Soufiene Ilahi , M. Baira , F. Saidi , N. Yacoubi , Laurent Auvray et al.
Journal of Alloys and Compounds, 2013, 581, pp.358-362
Article dans une revue hal-01116060 v1

Shift of the gap energy and thermal conductivity in BGaAs/GaAs alloys

Soufiene Ilahi , F. Saidi , R. Hamila , N. Yacoubi , H. Maaref et al.
Physica B: Condensed Matter, 2013, 421, pp.105-109
Article dans une revue hal-01116051 v1

Photothermal deflection spectroscopy (PDS) investigation of optical and thermal properties of BGaAs/GaAs alloys

Soufiene Ilahi , F. Saidi , R. Hamila , N. Yacoubi , Laurent Auvray et al.
Current Applied Physics, 2013, 13, pp.610-613
Article dans une revue hal-01116046 v1

Investigation of 3C-SiC growth on Si(111) by vapor-liquid-solid transport using a SiGe liquid phase

S. Berckmans , Laurent Auvray , G. Ferro , F. Cauwet , V. Soulière et al.
Journal of Crystal Growth, 2012, 354, pp.119-128
Article dans une revue hal-01116034 v1

Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method

R. Hamila , F. Saidi , H. Maaref , P. Rodriguez , Laurent Auvray
Journal of Applied Physics, 2012, 112, pp.063109/1-063109/5
Article dans une revue hal-01116036 v1

Buried selective growth of p-doped SiC by VLS epitaxy

Davy Carole , Stéphane Berckmans , Arthur Vo-Ha , Mihai Lazar , Dominique Tournier et al.
Materials Science Forum, 2012, 717-720, pp.169-172. ⟨10.4028/www.scientific.net/MSF.717-720.169⟩
Article dans une revue hal-00803061 v1

Micropipe-induced birefringence in 6H silicon carbide

T. Ouisse , D. Chaussende , L. Auvray
Journal of Applied Crystallography, 2010, 43, pp.122-133. ⟨10.1107/s0021889809043957⟩
Article dans une revue istex hal-01067400 v1

Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

R. Hamila , F. Saidi , P. Rodriguez , Laurent Auvray , Y. Monteil et al.
Journal of Alloys and Compounds, 2010, 506, pp.10. ⟨10.1016/j.jallcom.2010.06.169⟩
Article dans une revue istex hal-01116030 v1

Structural and optical study of BxInyGa1-x-yAs /GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD

F. Saidi , R. Hamila , H. Maaref , P. Rodriguez , Laurent Auvray et al.
Journal of Alloys and Compounds, 2010, 491, pp.45
Article dans une revue hal-01116023 v1

Clustering effects in optical properties of BGaAs/GaAs epilayers

R. Hamila , F. Saidi , A. Fouzri , Laurent Auvray , Y. Monteil et al.
Journal of Luminescence, 2009, 129, pp.1010-1014
Article dans une revue hal-01118207 v1

Study by AES and EELS spectroscopies of antimony and phosphorous evaporated on massive indium and on cleaned InP

Zoubida Lounis , M. Bouslama , N. Berrouachedi , C. Jardin , Laurent Auvray et al.
Vacuum, 2008, 82, pp.529-534
Article dans une revue hal-01118194 v1

Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by MOVPE

P. Rodriguez , Laurent Auvray , A. Favier , J. Dazord , Y. Monteil
Thin Solid Films, 2008, 516, pp.8424-8430
Article dans une revue hal-01118198 v1

The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation.

A Nouri , Zoubida Lounis , A. Ouerdane , M. Ghaffour , M. Bouadi et al.
Vacuum, 2007, 81, pp.979-984
Article dans une revue hal-01118182 v1

Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE

P. Rodriguez , Laurent Auvray , H. Dumont , J. Dazord , Y. Monteil
Journal of Crystal Growth, 2007, 298, pp.81-84
Article dans une revue hal-01118219 v1

Investigation of both interface states spectrum and deep oxide states from differential isothermal transient spectroscopy

P. Muret , Laurent Auvray , O. Salicio , C. Dubourdieu
Materials Science in Semiconductor Processing, 2006, 9 (6), pp.885-888. ⟨10.1016/j.mssp.2006.10.042⟩
Article dans une revue istex hal-05313966 v1

Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding

Guy Chichignoud , Laurent Auvray , Elisabeth Blanquet , Mikhail Anikin , Etienne Pernot et al.
Materials Science Forum, 2006, 527-529, pp. 71-74. ⟨10.4028/www.scientific.net/MSF.527-529.71⟩
Article dans une revue hal-00417197 v1
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Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies

C. Dubourdieu , Hervé Roussel , Carmen Jiménez , M. Audier , J. P. Senateur et al.
Materials Science and Engineering: B, 2005, B118 (1-3), pp.105-111. ⟨10.1016/j.mseb.2004.12.019⟩
Article dans une revue hal-00012501 v1

Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers

Peter J. Wellmann , Ralf Müller , Michel Pons , Aurélie Thuaire , Alexandre Crisci et al.
Materials Science Forum, 2005, 483?485, pp. 393-396. ⟨10.4028/0-87849-963-6.393⟩
Article dans une revue hal-00334316 v1

Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications

Didier Chaussende , Magali Ucar , Laurent Auvray , Francis Baillet , Michel Pons et al.
Crystal Growth & Design, 2005, 5 (4), pp.1539-1544. ⟨10.1021/cg050009i⟩
Article dans une revue hal-00118809 v1

Optical mapping of aluminum doped p-type SiC wafers

Peter J. Wellmann , T. Straubinger , U. Künecke , Ralf Müller , S. Sakwe et al.
Physica Status Solidi A (applications and materials science), 2005, 202 (4), pp. 598-601. ⟨10.1002/pssa.200460436⟩
Article dans une revue istex hal-00386442 v1

Optical investigation of GaAs1-xNx/GaAs heterostructure properties

F. Saidi , F. Hassen , H. Maaref , Laurent Auvray , H. Dumont et al.
physica status solidi (b), 2004, 241, pp.428-433
Article dans une revue hal-01118237 v1

Electrical characterization of SrTiO3 thin films deposited on Si(001) substrate by liquid injection MOCVD

J. Legrand , S. Lhostis , Y. Chang , L. Militaru , C. Lamard et al.
Microelectronic Engineering, 2004, 72 (1-4), pp.310-314. ⟨10.1016/j.mee.2004.01.009⟩
Article dans une revue istex hal-05313915 v1

Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method

Didier Chaussende , Carole Balloud , Laurent Auvray , Francis Baillet , Marcin Zielinski et al.
Materials Science Forum, 2004, 457-460, pp. 91-94. ⟨10.4028/0-87849-943-1.91⟩
Article dans une revue hal-00417942 v1

Electrical characterisation of SrTiO3 thin films deposited on Si(100) substrate by liquid injection MOCVD

J. Legrand , S. Lhostis , Y. Chang , L. Militaru , C. Lamard et al.
Microelectronic Engineering, 2004, 72, pp.310
Article dans une revue hal-00135402 v1

Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine

H. Dumont , Laurent Auvray , J. Dazord , Y. Monteil , O. Marty et al.
Thin Solid Films, 2004, 458, pp.154-160
Article dans une revue hal-01118229 v1

Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method

Laurent Auvray , Didier Chaussende , Francis Baillet , Ludovic Charpentier , Michel Pons et al.
Materials Science Forum, 2004, 457-460, pp.135-138. ⟨10.4028/www.scientific.net/MSF.457-460.135⟩
Article dans une revue hal-05313999 v1

Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs1-xNx/GaAs

H. Dumont , Laurent Auvray , Y. Monteil , O. Marty , G. Patriarche
Physica Status Solidi C: Current Topics in Solid State Physics, 2003, 0, pp.2749
Article dans une revue hal-01118294 v1

Nitrogen enrichment at the GaAs1-xNx/GaAs(001) interface : microstructure and optical properties

H. Dumont , Laurent Auvray , J. Dazord , Y. Monteil , C. Bondoux et al.
Journal of Crystal Growth, 2003, 248, pp.441-445
Article dans une revue hal-01118282 v1

Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures

H. Dumont , Laurent Auvray , Y. Monteil , F. Saidi , F. Hassen et al.
Optical Materials, 2003, 24, pp.303-308
Article dans une revue hal-01118285 v1

Optical signature of atomic ordering in In0,53Ga0,47As/InP : photoluminescence properties and IR response

H. Dumont , Laurent Auvray , Y. Monteil
Optical Materials, 2003, 24, pp.309
Article dans une revue hal-01118288 v1

Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD

F. Saidi , F. Hassen , H. Maaref , Laurent Auvray , H. Dumont et al.
Materials Science and Engineering: C, 2002, 21, pp.245-249
Article dans une revue hal-01118277 v1

Microscopic structure and optical properties of GaAs1-xNx/GaAs (001) interface grown by metalorganic vapor phase epitaxy

H. Dumont , Laurent Auvray , Y. Monteil , C. Bondoux , L. Largeau et al.
Applied Physics Letters, 2002, 80, pp.2460-2462
Article dans une revue hal-01118246 v1

Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE

H. Dumont , Laurent Auvray , Y. Monteil , Jean Bouix
Materials Science and Engineering: B, 2001, 84, pp.258-264
Article dans une revue hal-01118251 v1

Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP (001) step-bunched surfaces

V. Soulière , H. Dumont , Laurent Auvray , Y. Monteil
Journal of Crystal Growth, 2001, 226, pp.31-38
Article dans une revue hal-01118249 v1

AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE

Laurent Auvray , H. Dumont , J. Dazord , Y. Monteil , Jean Bouix et al.
Journal of Crystal Growth, 2000, 221, pp.475-480
Article dans une revue hal-01118274 v1

MOVPE growth of GaAsN : surface study by AFM and optical properties

Laurent Auvray , H. Dumont , J. Dazord , Y. Monteil , Jean Bouix et al.
Materials Science in Semiconductor Processing, 2000, 3, pp.505-509
Article dans une revue hal-01118272 v1

Surface morphology, electrical and optical properties of InGaAs/InP grown by MOVPE using trimethylarsine and arsine

H. Dumont , Laurent Auvray , J. Dazord , Y. Monteil , Jean Bouix et al.
Journal of Crystal Growth, 1999, 204, pp.1-9
Article dans une revue hal-01118258 v1

Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates

H. Dumont , Laurent Auvray , J. Dazord , V. Soulière , Y. Monteil
Journal of Applied Physics, 1999, 85, pp.7185-7190
Article dans une revue hal-01118261 v1

Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates

H. Dumont , Laurent Auvray , A. Ougazzaden , V. Soulière , J. Dazord et al.
Journal of Crystal Growth, 1999, 197, pp.755-761
Article dans une revue hal-01118266 v1

Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine

H. Dumont , Laurent Auvray , J. Dazord , Y. Monteil , Jean Bouix et al.
Applied Surface Science, 1999, 150, pp.161-170
Article dans une revue hal-01118255 v1

Effet de la polarité du substrat 4H-SiC sur la croissance hétéroépitaxiale du carbure de bore BxC par CVD

Gabriel Ferro , Laurent Auvray , François Cauwet , Yamina Benamra
Conférence MATEPI 2023, Jean-Noël AQUA, Jul 2023, Paris, France
Communication dans un congrès hal-04884322 v1

Réactivité et couple de diffusion dans le système B-C-Si à haute température

Yamina Benamra , J. Andrieux , Bruno Gardiola , Laurent Auvray , Gabriel Ferro et al.
MATERIAUX 2022, Oct 2022, Lille, France
Communication dans un congrès hal-04753534 v1

Epitaxial Growth of Boron Carbide on 4H-SiC

Yamina Benamra , Laurent Auvray , J. Andrieux , François Cauwet , Maria-Paz Alegre et al.
International conference on silicon carbide and related materials 2022, Sep 2022, DAVOS, Switzerland
Communication dans un congrès hal-04877889 v1

Buried selective growth of p-doped SiC by VLS epitaxy

Davy Carole , Stéphane Berckmans , Arthur Vo-Ha , Mihai Lazar , Dominique Tournier et al.
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747294 v1

Epitaxial growth of 3C-SiC onto silicon substrate by VLS transport using CVD-grown 3C-SiC seeding layer

S. Berckmans , Laurent Auvray , Gabriel Ferro , F. Cauwet , V. Souliere et al.
HeteroSiC–WASMPE, Jun 2011, Tours, France
Communication dans un congrès hal-01116084 v1

Investigation of the growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) transport

S. Berckmans , Laurent Auvray , G. Ferro , F. Cauwet , D. Carole et al.
ECSCRM 2010, Aug 2010, Oslo, Norway. pp.99-102
Communication dans un congrès hal-01116070 v1

On the characterization of boron in BGaAs nano-films using IBA technique

S. Abboudy , Maher Soueidan , Q. Al Assad , Laurent Auvray , Gabriel Ferro et al.
Mediterranean Conference on Innovative Materials and Applications (CIMA), Mar 2011, Beyrouth, Lebanon. pp.314-317, ⟨10.4028/www.scientific.net/AMR.324.314⟩
Communication dans un congrès hal-01116081 v1

The perovskite SrTiO3 on Si/SiO2 by liquid injection MOCVD

C. Dubourdieu , O. Salicio , S. Lhostis , L. Auvray , Y. Rozier et al.
ECS transactions, 2009, France. pp.669-684
Communication dans un congrès hal-00604265 v1

Dislocation-Induced Birefringence in Silicon Carbide

Thierry Ouisse , Didier Chaussende , Laurent Auvray , Etienne Pernot , Roland Madar
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.271-274, ⟨10.4028/www.scientific.net/MSF.615-617.271⟩
Communication dans un congrès hal-02890909 v1

MOVPE strip-like self-organization of InAs grown on InP vicinal surfaces

Laurent Auvray , V. Soulière , H. Dumont , J. Dazord , Y. Monteil et al.
MRS Spring Meeting, Apr 2000, San Francisco, United States. pp.59
Communication dans un congrès hal-01118304 v1

Nitrogen incorporation and growth kinetics of GaAsN/GaAs epilayers grown by MOVPE

Laurent Auvray , H. Dumont , J. Dazord , Y. Monteil , Jean Bouix
MRS Spring Meeting, Apr 2000, San Francisco, United States. pp.189
Communication dans un congrès hal-01118308 v1
Image document

Polarity Effect on the Heteroepitaxial Growth of BxС On 4H-SiС by CVD

François Cauwet , Yamina Benamra , Laurent Auvray , J. Andrieux , Gabriel Ferro
International conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy
Poster de conférence hal-04872652 v1

Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer

Stéphane Berckmans , Laurent Auvray , Gabriel Ferro , François Cauwet , Véronique Soulière et al.
European Conference on Silicon Carbide and Related Materials, Aug 2010, Oslo (Norway), Norway. Materials Science Forum, 711, pp.35-39, 2012, ⟨10.4028/www.scientific.net/MSF.711.35⟩
Proceedings/Recueil des communications hal-05314242 v1