Lionel Trojman

Directeur de la Recherche à l'Isep
35 %
Libre accès
119
Documents
Affiliation actuelle
  • Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication (LISITE)
Contact

Compétences

Physique des semiconducteurs design de circuits analogiques process de fabrications techno CMOS sciences de materiaux Physique de la matière condensée Physique du solide

Publications

Publications

Design Methodology for Power System-on-Chip Integration Based on E-Mode p-GaN HEMTs

Nataly Aracely Pozo Viera , Luis Miguel Prócel , Lionel Trojman

IEEE NEWCASS, Jun 2025, Paris, France

Communication dans un congrès hal-05505482v1

Enhancing Efficiency and Stability in 2D/3D Hybrid Perovskite Solar Cells: A Simulation Study of N-I-P and P-I-N Architectures with Different Charge Transport Layers

Lilian David-Egbunu , Ziyanda Zamaswazi , Wisly Fidel , Jacques Botsoa , Nicole Doumit et al.

JNPV 2025, Nov 2025, Strasbourg, France

Communication dans un congrès hal-05503816v1

Compressive Strain in FAPbI? to Supress Non-radiative Recombination: Toward a 2D/3D System Perovskite for High Efficiency Solar Cells

Lilian David-Egbunu , Ziyanda Zamaswazi , Wisly Fidel , Jacques Botsoa , Nicole Doumit et al.

E-MRS Fall meeting 2025, Sep 2025, Varsovie, Poland

Communication dans un congrès hal-05503844v1

Une nouvelle approche de la stabilité des pérovskites pour une technologie photovoltaïque adaptée aux besoins énergétiques des objets numériques

Lilian David-Egbunu , Nicole Doumit , Esidor Ntsoenzok , Lionel Trojman

JPCNFM 2025, Dec 2025, Saint-Malo, France

Communication dans un congrès hal-05503659v1

Fabrication de circuits intégrés durant des programmes doctoraux en technologie GaN et en 65nm : une accélération d’innovations

Lionel Trojman , Eduardo Holguin , Nataly Aracely Pozo Viera , Kevin Vicuña , Luis Miguel Prócel et al.

JPCNFM 2025, Dec 2025, Saint-Malo, France

Communication dans un congrès hal-05503643v1

Advanced Physics-Based Modeling of TFETs: A Comprehensive Geometric and Material Perspective

Marco Villegas , Luis Miguel Prócel , Silvana Guitarra , Paul Procel , Lionel Trojman

INFOS 2025, Jun 2025, Granada, Spain

Communication dans un congrès hal-05504913v1

TERO-PUF optimisé pour l'étalonnage sur Intel MAX-10 pour des PUF faibles et robustes

Kevin Vicuña , K. Foglia , Frédéric Amiel , Lionel Trojman , Sreejith Babu

JPCNFM, Dec 2025, Saint-Malo, France

Communication dans un congrès hal-05503630v1
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Ultra-Fast and High-Reliability VCMA-MTJ Based TCAM for Precision Search Operations

Kevin Vicuña , Stéphane Koffi , Laurent Raymond , Lionel Trojman

IEEE 16th Latin America Symposium on Circuits and Systems (LASCAS 2025), Feb 2025, Bento Gonçalves, Brazil. pp.1-5, ⟨10.1109/LASCAS64004.2025.10966309⟩

Communication dans un congrès hal-05055009v1

Design of a Gate Driver Based-on E-mode p-GaN HEMTs Handling 650V/10A GaN Power Device

Nataly Pozo , Luis-Miguel Prócel , Lionel Trojman

2024 22nd IEEE Interregional NEWCAS Conference (NEWCAS), IEEE, Jun 2024, Sherbroock, Canada. pp.333-337, ⟨10.1109/NewCAS58973.2024.10666324⟩

Communication dans un congrès hal-05187195v1
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Analysis of high resistive conduction mechanism in HfO 2 -based ReRAM devices

Silvana Guitarra , Lionel Trojman , Laurent Raymond

2024 IEEE Latin American Electron Devices Conference (LAEDC), May 2024, Guatemala City, Guatemala. pp.1-4, ⟨10.1109/LAEDC61552.2024.10555862⟩

Communication dans un congrès hal-04917650v1

All-GaN Integrated Overcurrent Protection Circuit Using Only Enhancement-mode p-GaN Devices

Nataly Pozo , Luis-Miguel Prócel , Lionel Trojman

2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI), Sep 2024, Joao Pessoa, Brazil. pp.1-5, ⟨10.1109/SBCCI62366.2024.10703983⟩

Communication dans un congrès hal-05187203v1

Effects of the compliance current in the electroforming process of HfO 2 -based ReRAM devices

Silvana Guitarra , Lionel Trojman , Laurent Raymond

2023 IEEE Latin American Electron Devices Conference (LAEDC), Jul 2023, Puebla, Mexico. pp.1-4, ⟨10.1109/LAEDC58183.2023.10209142⟩

Communication dans un congrès hal-04186168v1
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Conception de cellules nano-CMOS -Perspectives à dix ans

Etienne Sicard , Sonia Ben Dhia , Lionel Trojman

7èmes Journées Pédagogiques - JPCNFM 2023, INSA Toulouse, Nov 2023, Toulouse, France

Communication dans un congrès hal-04502940v1
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Analysis and Design of a Self-Powered VEH System Based on ULP Comparator

Eduardo Holguin , Luis Miguel Prócel , Andrei Vladimirescu , Lionel Trojman , Alexis Brenes

2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS), Lionel Trojman; Luis-Miguel Procel, Feb 2023, Quito, Ecuador. ⟨10.1109/LASCAS56464.2023.10108276⟩

Communication dans un congrès hal-04186120v1
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Effects of the compliance current in the electroforming process of HfO 2 -based ReRAM devices

Silvana Guitarra , Lionel Trojman , Laurent Raymond

2023 IEEE Latin American Electron Devices Conference (LAEDC), Jul 2023, Puebla, France. pp.1-4, ⟨10.1109/LAEDC58183.2023.10209142⟩

Communication dans un congrès hal-04396660v1
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Enhancement-mode p-GaN Comparators for power applications

Nataly Pozo , Luis-Miguel Prócel , Lionel Trojman

2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Jun 2023, Valencia, Spain. pp.197-200, ⟨10.1109/PRIME58259.2023.10161779⟩

Communication dans un congrès hal-04186145v1

Analysis of the reset transition in bipolar HfO2-based ReRAM to improve modeling accuracy

Silvana Guitarra , Lionel Trojman , Laurent Raymond , Martin Gavilanez

Latin American Electron Devices Conference (LAEDC), Jul 2022, Cancun, Mexico. ⟨10.1109/LAEDC54796.2022.9908218⟩

Communication dans un congrès hal-04092434v1
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Voltage and Technology Scaling of DMTJ-based STT-MRAMs for Energy-Efficient Embedded Memories

Esteban Garzon , Ramiro Taco , Luis Miguel Procel , Lionel Trojman , Marco Lanuzza

IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, France. pp.01-04, ⟨10.1109/LASCAS53948.2022.9789054⟩

Communication dans un congrès hal-03812303v1
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Energy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells

Ariana Musello , Santiago Perez , Marco Villegas , Luis Miguel Procel , Ramiro Taco et al.

IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, Chile. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789086⟩

Communication dans un congrès hal-03812310v1
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Voltage-to-Voltage Sigmoid Neuron Activation Function Design for Artificial Neural Networks

Tatiana Moposita , Lionel Trojman , Felice Crupi , Marco Lanuzza , Andrei Vladimirescu

IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, France. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789075⟩

Communication dans un congrès hal-03812298v1
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DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems

Kevin Vicuna , Luis-Miguel Procel , Lionel Trojman , Ramiro Taco

2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS), Mar 2022, Puerto Varas, Chile. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789065⟩

Communication dans un congrès hal-03812290v1

Design and optimization of a Vibrational MEMS-Based Energy Harvester

Eduardo Holguin , Lionel Trojman , Luis Miguel Procel , Alexis Brenes , Andrei Vladimirescu

2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Jun 2022, Villasimius, France. pp.209-212, ⟨10.1109/PRIME55000.2022.9816839⟩

Communication dans un congrès hal-03812325v1
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Low-Cost Smart Living Environment Monitoring Systems from a Metrological Point of View

Juan-Jose Jimenez , Domenico Luca Carni , Lionel Trojman , Luis-Miguel Procel , Francesco Lamonaca

IEEE International Workshop on Metrology for Living Environment (MetroLivEn) 2022, May 2022, Cosenza, Italy. pp.174-179, ⟨10.1109/MetroLivEnv54405.2022.9826978⟩

Communication dans un congrès hal-03812317v1
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Harvesting performances of a gap-closing MEMS energy harvester with squeeze-film damping

Eduardo Holguin , Alexis Brenes , Lionel Trojman , Andrei Vladimirescu

10th National Days on Energy Harvesting and Storage (JNRSE), Jun 2021, Grenoble, France

Communication dans un congrès hal-03345354v1
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Pédagogie hybride pour l'apprentissage de la conception d'un microprocesseur simplifié niveau master avec µWind

Lionel Trojman , F. V. Viteri , E. Sicard

JPCNFM 2021 :16e journées pédagogiques du CNFM (Coordination Nationale pour la Formation en Micro-électronique et en nanotechnologies), Oct 2021, St Malo, France. ⟨10.1051/j3ea/20221005⟩

Communication dans un congrès hal-03810252v1
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Assessment of 10 nm Tunnel- FETs and FinFETs transistors for ultra-low voltage and high-speed digital circuits

Mateo Rendon , Christian Cao , Kevin Landazuri , Luis Miguel Prócel , Lionel Trojman et al.

2021 IEEE Fifth Ecuador Technical Chapters Meeting (ETCM), Oct 2021, Cuenca, Ecuador. pp.1-6, ⟨10.1109/ETCM53643.2021.9590651⟩

Communication dans un congrès hal-03575604v1
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Implementation of 32nm MD5 Crypto-Processor using Different Topographical Synthesis Techniques and Comparison with 500nm Node

Juan-Jose Jimenez , Andre Borja , Laetitia Silly , Luis-Miguel Procel , Lionel Trojman et al.

2021 IEEE Fifth Ecuador Technical Chapters Meeting (ETCM), Oct 2021, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM53643.2021.9590739⟩

Communication dans un congrès hal-03575909v1
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ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric

Eliana Acurio , Lionel Trojman , Brice de Jaeger , Benoit Bakeroot , Stefaan Decoutere

IEEE International Reliability Physics Symposium (IRPS 2021), Mar 2021, Monterey (virtual conference), United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405163⟩

Communication dans un congrès hal-03218246v1
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High-Speed and Low-Energy Dual-Mode Logic based Single-Clock-Cycle Binary Comparator

Ricardo Escobar , Luis Miguel Procel , Lionel Trojman , Marco Lanuzza , Ramiro Taco

IEEE LASCAS 2021, Feb 2021, Arequipe, Peru. pp.1-4, ⟨10.1109/LASCAS51355.2021.9459151⟩

Communication dans un congrès hal-03107004v1
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A 180 nm Low-Cost Operational Amplifier for IoT Applications

Kevin Vicuna , Cristhopher Mosquera , Mateo Rendon , Ariana Musello , Marco Lanuzza et al.

2021 IEEE Fifth Ecuador Technical Chapters Meeting (ETCM), Oct 2021, Cuenca, Ecuador. pp.1-6, ⟨10.1109/ETCM53643.2021.9590655⟩

Communication dans un congrès hal-03575586v1
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Electrical Model and Performance of an Embedded MEMS Energy Harvester

Eduardo Holguin , Alexis Brenes , Lionel Trojman , Andrei Vladimirescu

International Conference on Analog VLSI Circuits (AVIC) 2021, Oct 2021, Bordeaux, France

Communication dans un congrès hal-03346368v1
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RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies

Lionel Trojman , David Rivadeneira , Marco Villegas , Eliana Acurio , Marco Lanuzza et al.

IEEE LASCAS 2021, Feb 2021, Arequipe (virtual), Peru. pp.1-4, ⟨10.1109/LASCAS51355.2021.9459129⟩

Communication dans un congrès hal-03107008v1
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Fabrication of Nanopores Using the Controlled Dielectric Breakdown Technique

Nagel Amaguayo , Ariana Musello , Pablo Lopez , Lionel Trojman , Luis Miguel Prócel et al.

2021 IEEE Latin America Electron Devices Conference (LAEDC), Apr 2021, Mexico, France. ⟨10.1109/LAEDC51812.2021.9437914⟩

Communication dans un congrès hal-03238942v1

Reconfigurable CMOS/STT-MTJ Non-Volatile Circuit for Logic-in-Memory Applications

Esteban Garzon , Benjamin Zambrano , Tatiana Moposita , Ramiro Taco , Luis-Miguel Procel et al.

2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2020, San Jose, Costa Rica. pp.1-4, ⟨10.1109/LASCAS45839.2020.9069027⟩

Communication dans un congrès hal-02951687v1

Effects of the technology scaling down to 28nm on Ultra-Low Voltage and Power OTA performance using TCAD simulations

Lionel Trojman , Juan Orozco , Mateo Bonilla , Mateo Valencia , Luis-Miguel Procel et al.

IEEE ANDESCON 2020, 2020, Guayaquil, Ecuador

Communication dans un congrès hal-02955295v1

Optimization of Active Voltage Rectifier / Doubler Designed in 90 nm Technology

David Rivadeneira , Marco Villegas , Luis Miguel Procel , Lionel Trojman

2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2020, San Jose, Costa Rica. pp.1-4, ⟨10.1109/LASCAS45839.2020.9069013⟩

Communication dans un congrès hal-02951685v1

720p-HD Grayscale and Color Images Shape Recognition System Implementation on a FPGA Platform with a 1080pFull-HD HDMI Interface using a Hu Moments Algorithm

Andre Borja , Lionel Trojman , Luis-Miguel Procel , Ramiro Taco

IEEE ANDESCON 2020, 2020, Guayaquil, Ecuador

Communication dans un congrès hal-02955281v1

Reconfigurable CMOS/STT-MTJ Non-Volatile Circuit for Logic-in-Memory Applications

Eliana Acurio , Felice Crupi , Brice de Jaeger , Stefaan Decoutere , Esteban Garzon et al.

2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2020, San Jose, France. pp.1-4, ⟨10.1109/LASCAS45839.2020.9069027⟩

Communication dans un congrès hal-02597587v1

Binarization Methodology Applied to Digital Images of Petroglyphs from Cueva del Diablo of Manabí

Luis-Miguel Procel , Michelle Aviles , Lionel Trojman , Florencio Delgado , Josefina Vasquez

2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-5, ⟨10.1109/ETCM48019.2019.9014866⟩

Communication dans un congrès hal-02951695v1

Resistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters

Silvana Guitarra , Lionel Trojman , Laurent Raymond

2019 Latin American Electron Devices Conference (LAEDC), Feb 2019, Armenia, Colombia. pp.1-4, ⟨10.1109/LAED.2019.8714728⟩

Communication dans un congrès hal-02951702v1

Implementation and Comparison of a Fast Shape Recognition Algorithm using Different FPGA Platforms

Andre Borja , Guillaume Varengues , Luis-Miguel Procel , Lionel Trojman , German Arevalo et al.

2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-5, ⟨10.1109/ETCM48019.2019.9014902⟩

Communication dans un congrès hal-02951692v1

TFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range

Romain Liautard , Lionel Trojman , Adriana Arevalo , Luis-Miguel Procel

2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-5, ⟨10.1109/ETCM48019.2019.9014896⟩

Communication dans un congrès hal-02951697v1

Power and Area Reduction of MD5 based on Cryptoprocessor Using novel approach of Internal Counters on the Finite State Machine

Juan-José Jiménez , Lionel Trojman , Luis-Miguel Procel

2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-4, ⟨10.1109/ETCM48019.2019.9014878⟩

Communication dans un congrès hal-02951693v1

New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies Luis-Miguel Procel Instituto de Micro/Nanoelectrónica

Adriana Arevalo , Romain Liautard , Daniel Romero , Lionel Trojman , Luis-Miguel Procel

SBCCI, Aug 2019, Sao Paolo, Brazil. pp.85-88, ⟨10.1145/3338852.3339871⟩

Communication dans un congrès hal-02951701v1

Exploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs

Esteban Garzon , Raffaele de Rose , Felice Crupi , Lionel Trojman , Giovanni Finocchio et al.

2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), Jul 2019, Lausanne, Switzerland. pp.85-88, ⟨10.1109/SMACD.2019.8795223⟩

Communication dans un congrès hal-02953651v1

Model for resistive switching in bipolar Hafnium-based memories

Silvana Guitarra , Laurent Raymond , Lionel Trojman

WOMEN IN PHYSICS: 6th IUPAP International Conference on Women in Physics, 2019, Birmingham, United Kingdom. pp.060005, ⟨10.1063/1.5110123⟩

Communication dans un congrès hal-02953546v1

Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters

L.-M. Procel , J. Paredes , Lionel Trojman

2019 Latin American Electron Devices Conference (LAEDC), Feb 2019, Armenia, Colombia. pp.1-4, ⟨10.1109/LAED.2019.8714738⟩

Communication dans un congrès hal-02951704v1

Optical Feedback Interferometry imaging sensor for micrometric flow-patterns using continuous scanning

D. Flores , Adam Quotb , Clément Tronche , Francis Jayat , Lionel Trojman et al.

2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956790⟩

Communication dans un congrès hal-02951698v1

Microprocessor Design with a Direct Bluetooth Connection in 45 nm Technology Using Microwind

Esteban Garzon , Felix Chavez , Diego Jaramillo , Luis Sanchez , Sofia Lara et al.

2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2019, Armenia, Colombia. pp.105-108, ⟨10.1109/LASCAS.2019.8667540⟩

Communication dans un congrès hal-02951706v1

On the parameter extraction of short channel UTBB-FDSOI FET’s with high-κ metal gate and TCAD modelling

Lionel Trojman , Andres Vaca , Luis Miguel Procel

2018 IEEE XXV International Conference on Electronics, Electrical Engineering and Computing (INTERCON), Aug 2018, Lima, Peru. pp.1-4, ⟨10.1109/INTERCON.2018.8526445⟩

Communication dans un congrès hal-02951713v1

Reliability in GaN-based devices for power applications

Eliana Acurio , Lionel Trojman , Felice Crupi , Ferdinando Iucolano , Nicolo Ronchi et al.

2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, France. pp.1-6, ⟨10.1109/ETCM.2018.8580263⟩

Communication dans un congrès hal-02951709v1

Capacitance Extraction of 34-nm Metallurgical Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique

Diego Benalcazar , Esteban Garzon , Lionel Trojman

2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM.2018.8580289⟩

Communication dans un congrès hal-02951708v1

A phenomenological model of the resistive switching for Hf-based ReRAM devices

Silvana Guitarra , Lionel Trojman , Laurent Raymond

2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM.2018.8580284⟩

Communication dans un congrès hal-02951710v1

Mobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process

Lionel Trojman , Diego Benalcazar , Luis Procel , Guillaume Jobard

2017 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC), Nov 2017, Ixtapa, Mexico. pp.1-6, ⟨10.1109/ROPEC.2017.8261677⟩

Communication dans un congrès hal-02952130v1

Implementation and optimization of the algorithm of automatic color enhancement in digital images

Juan Sebastian Romero , Luis Miguel Procel , Lionel Trojman , Damien Verdier

2017 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC), Nov 2017, Ixtapa, Mexico. pp.1-6, ⟨10.1109/ROPEC.2017.8261651⟩

Communication dans un congrès hal-02952122v1

Temperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect-Centric perspective

L.M. Procel , Lionel Trojman , F. Crupi

2016 IEEE ANDESCON, Oct 2016, Arequipa, Peru. pp.1-4, ⟨10.1109/ANDESCON.2016.7836241⟩

Communication dans un congrès hal-02952166v1

Remote control of VNA and parameter analyzer for RFCV measurements using Python

Esteban Garzon , Fernando M. Sanchez , Luis-Miguel Procel , Lionel Trojman

2016 IEEE ANDESCON, Oct 2016, Arequipa, Peru. pp.1-4, ⟨10.1109/ANDESCON.2016.7836225⟩

Communication dans un congrès hal-02952164v1

Statistical study of SiON short MOSFET under Channel Hot Carrier stress

Lionel Trojman , Juan Acosta , Mario Ortega , Luis-Miguel Procel

2016 IEEE ANDESCON, Oct 2016, Arequipa, Peru. pp.1-5, ⟨10.1109/ANDESCON.2016.7836238⟩

Communication dans un congrès hal-02952151v1

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

J. J. Franco , B. Kaczer , S. Mukhopadhyay , P. Duhan , P. Weckx et al.

2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.15.3.1-15.3.4, ⟨10.1109/IEDM.2016.7838422⟩

Communication dans un congrès hal-02952143v1

Origins and implications of increased channel hot carrier variability in nFinFETs

B. Kaczer , J. J. Franco , M. Cho , T. Grasser , Ph. Roussel et al.

2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.3B.5.1-3B.5.6, ⟨10.1109/IRPS.2015.7112706⟩

Communication dans un congrès hal-02952187v1

On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

L.-A. Ragnarsson , J. Mitard , T. Kauerauf , A. de Keersgieter , T. Schram et al.

2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2011, Hsinchu, Japan. pp.1-2, ⟨10.1109/VTSA.2011.5872255⟩

Communication dans un congrès hal-02953487v1

Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge

L. Pantisano , Lionel Trojman , J. Mitard , B. Dejaeger , S. Severi et al.

2008 Symposium on VLSI Technology, Jun 2008, Honolulu, United States. pp.52-53, ⟨10.1109/VLSIT.2008.4588560⟩

Communication dans un congrès hal-02952216v1

Line width dependent mobility in high-k a comparative performance study between FUSI and TiN

L. Pantisano , Lionel Trojman , S. Severi , E.San Andres , C. Kerner et al.

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Apr 2007, Hsinchu, Japan. pp.1-2, ⟨10.1109/VTSA.2007.378909⟩

Communication dans un congrès hal-02952258v1

Advanced electrical characterization toward (sub) 1nm EOT HfSiON ¿ hole trapping in PFET and L-dependent effects

M.B. Zahid , L. Pantisano , R. Degraeve , M. Aoulaiche , Lionel Trojman et al.

2007 IEEE Symposium on VLSI Technology, Jun 2007, Kyoto, Japan. pp.32-33, ⟨10.1109/VLSIT.2007.4339715⟩

Communication dans un congrès hal-02952244v1

Novel, Effective and Cost-Efficient Method of Introducing Fluorine into Metal/Hf-based Gate Stack in MuGFET and Planar SOI Devices with Significant BTI Improvement

A. Shickova , N. Collaert , P. Zimmerman , M. Demand , E. Simoen et al.

2007 IEEE Symposium on VLSI Technology, Jun 2007, Kyoto, Japan. pp.112-113, ⟨10.1109/VLSIT.2007.4339748⟩

Communication dans un congrès hal-02952222v1

Cross-wafer controlled interface layer thickness variation, and its application to SiO 2 / high-κ stack characterisation

B.J. O'Sullivan , V.S. Kaushik , L.-A. Ragnarsson , Lionel Trojman , B Onsia et al.

ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.395-398, ⟨10.1109/ESSDER.2006.307721⟩

Communication dans un congrès hal-02952300v1

High performing 8 /spl Orang/ EOT HfO/sub 2/ / tan low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions

Lionel Trojman , Lars-Åke Ragnarsson , Simone Severi , K.D. Johnson , David Brunco et al.

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 2005, Kyoto, Japan. pp.234-235, ⟨10.1109/.2005.1469281⟩

Communication dans un congrès hal-02952626v1
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Knowledge Graph-Driven Approach in Aspect-Based Sentiment Analysis: Exploring the Impact of Embedding Techniques

Souha Al Katat , Chamseddine Zaki , Hussein Hazimeh , Ibrahim El Bitar , Rafael Angarita et al.

IEEE Access, 2025, 13, pp.102553 - 102563. ⟨10.1109/access.2025.3577048⟩

Article dans une revue hal-05187209v1

Natural Language Processing for Arabic Sentiment Analysis: A Systematic Literature Review

Souha Al Katat , Chamseddine Zaki , Hussein Hazimeh , Ibrahim Bitar , Rafael Angarita et al.

IEEE Transactions on Big Data, In press, pp.1-18. ⟨10.1109/TBDATA.2024.3366083⟩

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SIMPLY+: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing

Tatiana Moposita , Esteban Garzón , Raffaele de Rose , Felice Crupi , Andrei Vladimirescu et al.

IEEE Access, 2023, 11, pp.144084-144094. ⟨10.1109/ACCESS.2023.3344197⟩

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Efficiency of Double-barrier Magnetic Tunnel Junction-based Digital eNVM array for Neuro-inspired Computing

Tatiana Moposita , Esteban Garzón , Andrei Vladimirescu , Marco Lanuzza , Felice Crupi et al.

IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70 (3), pp.1254-1258. ⟨10.1109/TCSII.2023.3240474⟩

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A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Lionel Trojman , Eliana Acurio , Brice de Jaeger , Niels Posthuma , Stefaan Decoutere et al.

Solid-State Electronics, 2023, 210, pp.108778. ⟨10.1016/j.sse.2023.108778⟩

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Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs

Esteban Garzón , Raffaele de Rose , Felice Crupi , Lionel Trojman , Adam Teman et al.

Solid-State Electronics, 2022, 194, pp.108315. ⟨10.1016/j.sse.2022.108315⟩

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Pédagogie hybride pour l’apprentissage de la conception d’un microprocesseur simplifié niveau master avec μWind

Lionel Trojman , Fatima Viteri , E. Sicard

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2022, 21, pp.1005. ⟨10.1051/j3ea/20221005⟩

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Estudio de Confiabilidad en Diodos Basados en AlGaN/GaN Durante el Estado de Encendido

Eliana Acurio , Lionel Trojman , Brice de Jaeger , Benoit Bakeroot

Revista Politécnica, 2022, 50 (1), pp.27-34. ⟨10.33333/rp.vol50n1.03⟩

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Breast cancer, screening and diagnostic tools: All you need to know

Diego Barba , Ariana León-Sosa , Paulina Lugo , Daniela Suquillo , Fernando Torres et al.

Critical Reviews in Oncology/Hematology, 2021, 157, pp.103174. ⟨10.1016/j.critrevonc.2020.103174⟩

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Energy Efficient Self-Adaptive Dual Mode Logic Address Decoder

Kevin Vicuña , Cristhopher Mosquera , Ariana Musello , Sara Benedictis , Mateo Rendón et al.

Electronics, 2021, 10 (9), pp.1052. ⟨10.3390/electronics10091052⟩

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Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration

Silvana Guitarra , Laurent Raymond , Lionel Trojman

Solid-State Electronics, 2021, 176, pp.107947. ⟨10.1016/j.sse.2020.107947⟩

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Relaxing Non-Volatility for Energy-Efficient DMTJ Based Cryogenic STT-MRAM

Esteban Garzón , Raffaele De Rose , Felice Crupi , Lionel Trojman , Adam Teman et al.

Solid-State Electronics, 2021, pp.108090. ⟨10.1016/j.sse.2021.108090⟩

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From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits

Lionel Trojman , Eduardo Holguin , Marco Villegas , Luis-Miguel Procel , Ramiro Taco

Electronics, 2021, 11 (4), pp.525. ⟨10.3390/electronics11040525⟩

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A Low-Voltage, Low-Power Reconfigurable Current-Mode Softmax Circuit for Analog Neural Networks

Massimo Vatalaro , Marco Lanuzza , Felice Crupi , Tatiana Moposita , Lionel Trojman et al.

Electronics, 2021, 10 (9), pp.1004. ⟨10.3390/electronics10091004⟩

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Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress

Eliana Acurio , Lionel Trojman , Felice Crupi , Tatiana Moposita , Brice de Jaeger et al.

IEEE Transactions on Device and Materials Reliability, 2020, 20 (1), pp.167-171. ⟨10.1109/TDMR.2020.2969638⟩

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Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework

Esteban Garzón , Raffaele de Rose , Felice Crupi , Lionel Trojman , Giovanni Finocchio et al.

Systems Integration, 2020, 71, pp.56-69. ⟨10.1016/j.vlsi.2020.01.002⟩

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Influence of GaN- and Si 3 N 4 -Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

Eliana Acurio , Felice Crupi , Nicolo Ronchi , Brice de Jaeger , Benoit Bakeroot et al.

IEEE Transactions on Electron Devices, 2019, 66 (2), pp.883-889. ⟨10.1109/TED.2018.2888809⟩

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Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework

Esteban Garzón , Lionel Trojman , Felice Crupi , Marco Lanuzza , Raffaele de Rosa

Microelectronic Engineering, 2019, 215, pp.111009. ⟨10.1016/j.mee.2019.111009⟩

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Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model

Lionel Trojman , Lars-Åke Ragnarsson , Nadine Collaert

Solid-State Electronics, 2019, 154, pp.24-30. ⟨10.1016/j.sse.2019.02.003⟩

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Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

Eliana Acurio , Felice Crupi , Nicolo Ronchi , Brice de Jaeger , Benoit Bakeroot et al.

IEEE Transactions on Electron Devices, 2018, 65 (5), pp.1765-1770. ⟨10.1109/TED.2018.2818409⟩

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Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs

Eliana Acurio , Felice Crupi , Paolo Magnone , Lionel Trojman , Fernando Iucolano

Microelectronic Engineering, 2017, 178, pp.42-47. ⟨10.1016/j.mee.2017.04.044⟩

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On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Eliana Acurio , Felice Crupi , Paolo Magnone , Lionel Trojman , Gaudenzio Meneghesso et al.

Solid-State Electronics, 2017, 132, pp.49-56. ⟨10.1016/j.sse.2017.03.007⟩

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A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

L. Procel , F. Crupi , Lionel Trojman , J. J. Franco , B. Kaczer

IEEE Transactions on Device and Materials Reliability, 2016, 16 (1), pp.98-100. ⟨10.1109/TDMR.2015.2511085⟩

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Study of the scaling and the temperature for RERAM cells using the QPC model

Lionel Trojman , Silvana Guitarra , Luis Miguel Procel , Laurent Raymond

IEEE Latin America Transactions, 2016, 14 (12), pp.4693-4698. ⟨10.1109/TLA.2016.7816999⟩

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Study of Mobility for HfO2 dielectric FDSOI-UTTB pMOS under substrate biases

Lionel Trojman

IEEE Latin America Transactions, 2016, 14 (10), pp.4235-4240. ⟨10.1109/TLA.2016.7786299⟩

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A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

Luis Miguel Procel , Felice Crupi , Jacopo Franco , Lionel Trojman , Ben Kaczer et al.

Microelectronic Engineering, 2015, 147, pp.72-74. ⟨10.1016/j.mee.2015.04.055⟩

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Mobility Improvement Study for 8-Å-EOT HfO₂ UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

Lionel Trojman , Lars-Åke Ragnarsson , Nadine Collaert

IEEE Transactions on Electron Devices, 2014, 61 (11), pp.3632-3638. ⟨10.1109/TED.2014.2357673⟩

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Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs

Luis Miguel Procel , Felice Crupi , Jacopo Franco , Lionel Trojman , Ben Kaczer

IEEE Electron Device Letters, 2014, 35 (12), pp.1167-1169. ⟨10.1109/LED.2014.2361342⟩

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DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

Vicenzo Maccaronio , Luis-Miguel Procel , Felice Crupi , Ludovic Goux , Eddy Simoens et al.

Microelectronic Engineering, 2013, 107, pp.1-5. ⟨10.1016/j.mee.2013.02.076⟩

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Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO 2 -based resistive random access memories

Luis-Miguel Procel , Lionel Trojman , Jorge Moreno , Felice Crupi , Vicenzo Maccaronio et al.

Journal of Applied Physics, 2013, 114 (7), pp.074509. ⟨10.1063/1.4818499⟩

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High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects

Lionel Trojman , L. Pantisano , L. Ragnarsson

IEEE Transactions on Electron Devices, 2012, 59 (7), pp.1856-1862. ⟨10.1109/TED.2012.2193402⟩

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Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)—Does the Dielectric Quality Matter?

Lionel Trojman , Luigi Pantisano , Morin Dehan , Isabelle Ferain , Simone Severi et al.

IEEE Transactions on Electron Devices, 2009, 56 (12), pp.3009-3017. ⟨10.1109/TED.2009.2032280⟩

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Understanding and Importance of Defects in Advanced Materials

Luigi Pantisano , Lionel Trojman , Rob O'Connor , Ben Kaczer , Guido Groeseneken

ECS Transactions, 2009, 18 (1), pp.651

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Trapping in 1nm EOT high-k/MG

Mohamed Zahid , Luigi Pantisano , Robin Degraeve , Marc Aoulaiche , Lionel Trojman et al.

ECS Transactions, 2008, 16 (5), pp.77

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Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)

Lionel Trojman , Luigi Pantisano , Isabelle Ferain , Simone Severi , Herman Maes et al.

IEEE Transactions on Electron Devices, 2008, 55 (12), pp.3414-3420. ⟨10.1109/TED.2008.2006548⟩

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On the Impact of Defects Close to the Gate Electrode on the Low-Frequency $\hbox{1}/f$ Noise

Paolo Magnone , Luigi Pantisano , Felice Crupi , Lionel Trojman , Calogero Pace et al.

IEEE Electron Device Letters, 2008, 29 (9), pp.1056-1058. ⟨10.1109/LED.2008.2001551⟩

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Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks

Isabelle Ferain , Luigi Pantisano , Anil Kottantharayil , Julie Pietry , Lionel Trojman et al.

Microelectronic Engineering, 2007, 84 (9-10), pp.1882-1885. ⟨10.1016/j.mee.2007.04.074⟩

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High-k Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality—A Mobility Study

Lionel Trojman , Lars-Ke Ragnarsson , Barry O'Sullivan , Maarten Rosmeulen , Vidya Kaushik et al.

IEEE Transactions on Electron Devices, 2007, 54 (3), pp.497-503. ⟨10.1109/TED.2006.890230⟩

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Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

M. Aoulaiche , M. Houssa , W. Deweerd , Lionel Trojman , T. Conard et al.

IEEE Electron Device Letters, 2007, 28 (7), pp.613-615. ⟨10.1109/LED.2007.899435⟩

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Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation

Barry O'Sullivan , Vidya Kaushik , J.-L. Everaert , Lionel Trojman , Lars-Ke Ragnarsson et al.

IEEE Transactions on Electron Devices, 2007, 54 (7), pp.1771-1775. ⟨10.1109/TED.2007.898460⟩

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The Electrochemical Society High-k Characterization by RFCV

Enrique San Andres , Luigi Pantisano , Philippe Roussel , Maria Toledano-Luque , Lionel Trojman et al.

ECS Transactions, 2007, 11 (4)

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Performance assessment of (110) p-FET high-κ/MG: is it mobility or series resistance limited?

Lionel Trojman , Luigi Pantisano , Simone Severi , Enrique San Andres , Thomas Hoffman et al.

Microelectronic Engineering, 2007, 84 (9-10), pp.2058-2062. ⟨10.1016/j.mee.2007.04.090⟩

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Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

L.-A. Ragnarsson , S. Severi , Lionel Trojman , K.D. Johnson , D.P. Brunco et al.

IEEE Transactions on Electron Devices, 2006, 53 (7), pp.1657-1668. ⟨10.1109/TED.2006.876274⟩

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RF Split Capacitance–Voltage Measurements of Short-Channel and Leaky MOSFET Devices

E. San Andres , L. Pantisano , J. Ramos , S. Severi , Lionel Trojman et al.

IEEE Electron Device Letters, 2006, 27 (9), pp.772-774. ⟨10.1109/LED.2006.881089⟩

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Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility

Guilherme Lujan , Wim Magnus , Bart Sorée , Lars-Åke Ragnarsson , Lionel Trojman et al.

Microelectronic Engineering, 2005, 80, pp.82-85. ⟨10.1016/j.mee.2005.04.047⟩

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Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

Lionel Trojman , Lars-Åke Ragnarsson , Luigi Pantisano , Guilherme Lujan , Michel Houssa et al.

Microelectronic Engineering, 2005, 80, pp.86-89. ⟨10.1016/j.mee.2005.04.107⟩

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