
MP
Marco Pala
155
Documents
Affiliation actuelle
- Centre de Nanosciences et de Nanotechnologies (C2N)
Identifiants chercheurs
Publications
Publications
Transient Thermal Response in 2D h-BN/Graphene Heterostructures : Ab initio based Monte Carlo simulationNanoscale and Microscale Heat Transfer (NMHT) VIII, Jun 2024, Girona, Spain
Communication dans un congrès
hal-04740290
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Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.301-304, ⟨10.23919/SISPAD57422.2023.10319610⟩
Communication dans un congrès
hal-04333397
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Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.21-24, ⟨10.23919/SISPAD57422.2023.10319605⟩
Communication dans un congrès
hal-04333399
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Full Band Monte Carlo simulation of transient and stationary thermal transport in GaAs porous nanostructures based on ab initio calculationInternational Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain
Communication dans un congrès
hal-04740333
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Full Band Monte Carlo simulation of 2D h-BN nanostructure for phonon transport based on ab initio calculation17th International Conference on Phonon Scattering in Condensed Matter, Phonons 2023, Jul 2023, Paris, France
Communication dans un congrès
hal-04740306
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Automatic optimization of doping profile for high performance Single-Photon Avalanche DiodesInternational Workshop on Computational Nanotechnology (IWCN) 2023, Jun 2023, Barcelone, Spain
Communication dans un congrès
hal-04740345
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Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.369-372, ⟨10.23919/SISPAD57422.2023.10319557⟩
Communication dans un congrès
hal-04333398
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Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts68th IEEE International Electron Devices Meeting (IEDM 2022), Dec 2022, San Francisco, CA, United States. pp.28.2.1-28.2.4, ⟨10.1109/IEDM45625.2022.10019449⟩
Communication dans un congrès
hal-04123805
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Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench ProbabilityInternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States
Communication dans un congrès
hal-03374008
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Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations2021 IEEE 67th International Electron Devices Meeting (IEDM), Dec 2021, San Francisco, United States. pp.32.1.1-32.1.4, ⟨10.1109/IEDM19574.2021.9720540⟩
Communication dans un congrès
hal-03793958
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Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.293-296, ⟨10.1109/SISPAD54002.2021.9592567⟩
Communication dans un congrès
hal-03445562
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Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
Communication dans un congrès
hal-03254209
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Full Band Monte Carlo simulation of phonon transfer at interfaces2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩
Communication dans un congrès
hal-03029928
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Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.3-6, ⟨10.23919/SISPAD49475.2020.9241641⟩
Communication dans un congrès
hal-03029922
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Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870406⟩
Communication dans un congrès
hal-02404574
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Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2018, Austin, France. pp.224-227, ⟨10.1109/SISPAD.2018.8551706⟩
Communication dans un congrès
hal-02350996
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High performance WTe<inf>2</inf>-MoS<inf>2</inf>in-plane heterojunction Tunnel Field Effect Transistors48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩
Communication dans un congrès
hal-02351006
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Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.33.1.1-33.1.4, ⟨10.1109/IEDM.2018.8614613⟩
Communication dans un congrès
hal-02350969
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New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Mar 2018, Kobe, Japan. pp.236-238, ⟨10.1109/EDTM.2018.8421501⟩
Communication dans un congrès
hal-02351100
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NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, France. pp.35.1.1-35.1.4, ⟨10.1109/IEDM.2017.8268498⟩
Communication dans un congrès
hal-02351115
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Van der Waals tunnel field effect transistors with misoriented layersGraphene 2017, Mar 2017, Barcelona, Spain
Communication dans un congrès
hal-01966757
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Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETsInternational Workshop on Computational Nanotechnology (IWCN 2017), Jun 2017, Windermere, United Kingdom
Communication dans un congrès
hal-01966686
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Van der Waals tunnel field effect transistors with lateral momentum mismatch2D@Grenoble, Fondation Nanosciences, Apr 2017, Grenoble, France
Communication dans un congrès
hal-01966731
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Local stress engineering for the optimization of p-GaN gate HEMTs power devices2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2017, Kamakura, Japan
Communication dans un congrès
hal-01643379
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Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.145-148, ⟨10.23919/SISPAD49475.2020.9241648⟩
Communication dans un congrès
hal-03029924
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VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.108-111, ⟨10.1109/ULIS.2016.7440064⟩
Communication dans un congrès
hal-02063643
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A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩
Communication dans un congrès
hal-02065220
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A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.12.5.1 - 12.5.4, ⟨10.1109/IEDM.2015.7409684⟩
Communication dans un congrès
hal-01967913
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Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.128-131, ⟨10.1109/SISPAD.2015.7292275⟩
Communication dans un congrès
hal-02067223
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Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETsGRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop, M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France
Communication dans un congrès
hal-02068476
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Quantum simulation of tunnel field-effect transistors based on a vertical heterojunction of 2D transition metal dichalcogenidesAnnual meeting of the GDRi Graphene and Nanotubes, Nov 2015, Aussois, France
Communication dans un congrès
hal-01966736
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Quantum simulation of tunnel field-effect transistors based on transition metal dichalcogenidesGraphene 2015, Mar 2015, Bilbao, Spain
Communication dans un congrès
hal-01968207
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Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.245-248, ⟨10.1109/ULIS.2015.7063819⟩
Communication dans un congrès
hal-01966809
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Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.49-52, ⟨10.1109/ULIS.2015.7063770⟩
Communication dans un congrès
hal-02063611
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Impact of Surface Roughness on Thermoelectric Properties of Silicon Nanotubes61st JSAP (Japan Society of Applied Physics) Spring Meeting, Mar 2014, Tokyo, Japan
Communication dans un congrès
hal-01966677
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Quantum simulation of a 2-D heterojunction interlayer tunneling field effect transistor2nd Workshop Graphene in Grenoble, Fondation Nanosciences, Nov 2014, Grenoble, France
Communication dans un congrès
hal-01966721
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(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing, D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States
Communication dans un congrès
hal-02065948
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Quantum simulation of self-heating effects in rough Si nanowire FETs17th International Workshop on Computational Electronics (IWCE 2014), Jun 2014, Paris, France. pp.1-3, ⟨10.1109/IWCE.2014.6865827⟩
Communication dans un congrès
hal-01966681
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(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects226th ECS and SMEQ Joint International Meeting: SiGe,Ge and Related Compounds: Materials, Processing and Devices 6, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico
Communication dans un congrès
hal-02066006
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A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.7.2.1-7.2.4, ⟨10.1109/IEDM.2014.7047002⟩
Communication dans un congrès
hal-02049421
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Coherence and Coulomb blockade in ultra-small quantum Hall islands16ème Forum des Microscopies à Sondes Locales, 2013, Spa, Belgium. papier OC23, 41-42
Communication dans un congrès
hal-00956273
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Scanning gate spectroscopy of a quantum Hall island near a quantum point contactAmerican Physical Society March Meeting, APS March Meeting 2013, 2013, Baltimore, MD, United States
Communication dans un congrès
hal-00811773
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Design Options for Hetero-Junction Tunnel FETs with High on Current and Steep Sub-VT SlopeIEDM 2013, Dec 2013, Washington, United States. pp.128-131, ⟨10.1109/IEDM.2013.6724567⟩
Communication dans un congrès
hal-01074151
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Nanowires applications in the More Moore/More-Than-Moore perspectivesE-MRS E-MRS 2013 Spring Meeting, Symposium K: Physics and technology of advanced extra functionality CMOS-based devices, May 2013, Strasbourg, France
Communication dans un congrès
hal-01020753
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Towards self-powered systems: using nanostructures to harvest ambient energy2nd Ukrainian-French Seminar "Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics", Apr 2013, Kyiv, Ukraine
Communication dans un congrès
hal-01182195
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A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks16th International Conference on Modulated Semiconductor Structures, MSS-16, 2013, Wroclaw, Poland
Communication dans un congrès
hal-00878505
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Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ringAmerican Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States
Communication dans un congrès
hal-00579035
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Imaging quantum Hall Coulomb islands inside a quantum ringAmerican Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States
Communication dans un congrès
hal-00579036
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A Study for Thermoelectric Properties of Si nanowiresEuropean Korean Congress, 2011, Paris, France
Communication dans un congrès
hal-00650059
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A Study for Thermoelectric Properties of SiC nanowiresInternational Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States
Communication dans un congrès
hal-00650068
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Non-equilibrium transport through coupled quantum dot-metallic island systemsAnnual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter (DPG Meeting), Mar 2010, Dresden, Italy
Communication dans un congrès
hal-00604752
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Elastic and inelastic scattering in SiNWs1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, Oct 2010, Kiev, Ukraine
Communication dans un congrès
hal-00604930
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Etude du transport dans les composants ultracourts sur SOIJournées Transport balistique du GDR Nanoélectronique, May 2009, Orsay, France
Communication dans un congrès
hal-00604956
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Influence of ionized impurities in Silicon Nanowire TransistorsProceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3, 2009, Beijing, China. pp.137-140
Communication dans un congrès
hal-00603874
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Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling DiodesInt. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.91-94
Communication dans un congrès
hal-00604239
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Full-3D real-space treatment of surface roughness in double gate MOSFETsInt. Conference on Ultimate Integration of Silicon, Aachen,, Mar 2009, Germany. pp.47-50
Communication dans un congrès
hal-00604232
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Simulation full-3D real-space NEGF du transport et du magnétotransport dans le FET à nanofil de SiliciumJNRDM 2009,, May 2009, Lyon, France
Communication dans un congrès
hal-00604958
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Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling DiodesEuropean Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.237-241
Communication dans un congrès
hal-00603719
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Full-3D real-space simulation of surface-roughness effects in double gate MOSFETsProceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3, May 2009, Beijing, China. pp.309-312
Communication dans un congrès
hal-00603871
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Scanning-Gate Microscopy images the electronic LDOS inside nanostructures11th International Conference on Non-contact Atomic Force Microscopy: NCAFM-2008, Madrid, September 16-19, 2008, Sep 2008, Madrid, Spain
Communication dans un congrès
hal-00392555
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Imaging the electron local density of states inside buried semiconductor quantum rings29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008, Jul 2008, Rio de Janeiro, Brazil
Communication dans un congrès
hal-00392551
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Full 3D real-space NEGF simulation of transport and magnetotransport in Si-Nanowire FETsFringe workshop ESSDERC 08, Edinburgh, UK, Sep 2008, Edinburgh, Ireland
Communication dans un congrès
hal-00392550
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Local Density of States from Scanning Gate MicroscopyAnnual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter, Berlin, Feb 2008, Berlin, Germany
Communication dans un congrès
hal-00392549
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Performances Comparison of Si and GaAs Based Resonant Tunneling DiodesISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France
Communication dans un congrès
hal-00391921
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Quantum transport in nanowire metal-oxide-semiconductor transistors: influence of dielectric confinement29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008 to be published in AIP Conference Proceedings Series, Jul 2008, -, France
Communication dans un congrès
hal-00392554
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Tunnel Field‐Effect Transistors Based on III–V SemiconductorsBeyond‐CMOS: State of the Art and Trends, 1, Wiley, 2023, ⟨10.1002/9781394228713.ch1⟩
Chapitre d'ouvrage
hal-04333402
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Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient EnergyA. Nazarov; F. Balestra; V. Kilchytska; D. Flandre. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting, Springer International Publishing, pp.223-240, 2014, 978-3-319-08803-7. ⟨10.1007/978-3-319-08804-4_11⟩
Chapitre d'ouvrage
hal-01966696
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Scanning Probe Electronic Imaging of Lithographically Patterned Quantum RingsEd. by V. Fomin. Physics of Quantum Rings, pp.107-121, 2014, Nanoscience and Nanotechnology, 978-3-642-39196-5. ⟨10.1007/978-3-642-39197-2⟩
Chapitre d'ouvrage
hal-02049163
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Nanowire DevicesEd. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩
Chapitre d'ouvrage
hal-02051240
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Beyond CMOSNanoscale CMOS, 1, Wiley, 2013, ⟨10.1002/9781118621523.ch12⟩
Chapitre d'ouvrage
hal-04333408
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Quantum Simulation of Silicon-Nanowire FETsSemiconductor-On-Insulator Materials for Nanoelectronics Applications, Springer Berlin Heidelberg, pp.237-249, 2011, Engineering Materials, ⟨10.1007/978-3-642-15868-1_13⟩
Chapitre d'ouvrage
istex
hal-04333409
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Simulation of van der Waals vertical tunnel field-effect transistors2017, pp.18
Autre publication scientifique
hal-02008463
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