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Marco Pala

134
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Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer

Lama Khalil , Debora Pierucci , Emilio Velez-Fort , José Avila , Céline Vergnaud et al.
Nanotechnology, 2023, 34 (4), pp.045702. ⟨10.1088/1361-6528/ac9abe⟩
Journal articles hal-03864963v1
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Full quantum simulation of Shockley–Read–Hall recombination in p-i-n and tunnel diodes

A. Pilotto , P. Dollfus , J. Saint-Martin , Marco G. Pala
Solid-State Electronics, 2022, 198, pp.108469. ⟨10.1016/j.sse.2022.108469⟩
Journal articles hal-03818605v1
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α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene

Lama Khalil , Pietro Maria Forcella , Geoffroy Kremer , Federico Bisti , Julien Chaste et al.
Physical Review B, 2022, 106 (12), pp.125152. ⟨10.1103/physrevb.106.125152⟩
Journal articles hal-03865011v1
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Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Remi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy et al.
IEEE Journal of the Electron Devices Society, 2022, 10, pp.584-592. ⟨10.1109/JEDS.2022.3168365⟩
Journal articles hal-03794480v1
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A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator

Daniel Lizzit , Pedram Khakbaz , Francesco Driussi , Marco G. Pala , David Esseni et al.
Solid-State Electronics, 2022, 194, pp.108365. ⟨10.1016/j.sse.2022.108365⟩
Journal articles hal-03793953v1
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Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Rémi Helleboid , Denis Rideau , Jeremy Grebot , Isobel Nicholson , Norbert Moussy et al.
Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩
Journal articles hal-03793952v1
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Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation

Philippe Dollfus , Jérôme Saint-Martin , T. Cazimajou , R. Helleboid , A. Pilotto et al.
Solid-State Electronics, 2022, 194, pp.108361. ⟨10.1016/j.sse.2022.108361⟩
Journal articles hal-03793955v1

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy

Debora Pierucci , Aymen Mahmoudi , Mathieu Silly , Federico Bisti , Fabrice Oehler et al.
Nanoscale, 2022, 14 (15), pp.5859-5868. ⟨10.1039/D2NR00458E⟩
Journal articles hal-03674688v1
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Phonon-assisted transport in van der Waals heterostructure tunnel devices

A. M'Foukh , Jérôme Saint-Martin , Philippe Dollfus , Marco G. Pala
Solid-State Electronics, 2022, 194, pp.108344. ⟨10.1016/j.sse.2022.108344⟩
Journal articles hal-03793956v1
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A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Remi Helleboid , Denis Rideau , Isobel Nicholson , Jeremy Grebot , Bastien Mamdy et al.
Journal of Physics D: Applied Physics, inPress, ⟨10.1088/1361-6463/ac9b6a⟩
Journal articles hal-03828806v1
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Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter

Yanjie Shao , Marco G. Pala , David Esseni , Jesus del Alamo
IEEE Transactions on Electron Devices, 2022, 69 (4), pp.2188-2195. ⟨10.1109/TED.2022.3145767⟩
Journal articles hal-03793957v1
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Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

Cyrine Ernandes , Lama Khalil , Hela Almabrouk , Debora Pierucci , Biyuan Zheng et al.
npj 2D Materials and Applications, 2021, 5, pp.7. ⟨10.1038/s41699-020-00187-9⟩
Journal articles hal-03450806v1
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Quenching Statistics of Silicon Single Photon Avalanche Diodes

Thibauld Cazimajou , Marco G. Pala , Jerome Saint-Martin , Remi Helleboid , Jeremy Grebot et al.
IEEE Journal of the Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3127013⟩
Journal articles hal-03439663v1
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Indirect to direct band gap crossover in two-dimensional WS 2(1-x) Se 2x alloys

Cyrine Ernandes , Lama Khalil , Hela Almabrouk , Debora Pierucci , Biyuan Zheng et al.
npj 2D Materials and Applications, 2021
Journal articles hal-03097524v1
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Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors

Jiang Cao , Yu Wu , Hao Zhang , Demetrio Logoteta , Shengli Zhang et al.
npj 2D Materials and Applications, 2021, 5 (1), ⟨10.1038/s41699-021-00238-9⟩
Journal articles hal-03334913v1
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Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer

Cyrine Ernandes , Lama Khalil , Hugo Henck , Meng-Qiang Zhao , Julien Chaste et al.
Nanomaterials, 2021, 11 (11), pp.2921. ⟨10.3390/nano11112921⟩
Journal articles hal-03450796v1
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Electronic band gap of van der Waals α-As2Te3 crystals

Lama Khalil , Jean-Christophe Girard , Debora Pierucci , Federico Bisti , Julien Chaste et al.
Applied Physics Letters, 2021, 119 (4), pp.043103. ⟨10.1063/5.0058291⟩
Journal articles hal-03321708v1
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Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application

Marco G. Pala , P. Giannozzi , D. Esseni
Physical Review B, 2020, 102 (4), ⟨10.1103/PhysRevB.102.045410⟩
Journal articles hal-03029916v1
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Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials

Adel M'Foukh , Marco G. Pala , David Esseni
IEEE Transactions on Electron Devices, 2020, 67 (12), pp.5662-5668. ⟨10.1109/TED.2020.3029548⟩
Journal articles hal-03029917v1
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Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

D. Logoteta , J. Cao , Marco G. Pala , P. Dollfus , Y. Lee et al.
Physical Review Research, 2020, 2 (4), ⟨10.1103/PhysRevResearch.2.043286⟩
Journal articles hal-03032703v1
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Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices

Marco Pala , David Esseni
Journal of Applied Physics, 2019, 126 (5), pp.055703. ⟨10.1063/1.5109187⟩
Journal articles hal-02350925v1
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High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions

Jean Choukroun , Marco Pala , Shiang Fang , Efthimios Kaxiras , Philippe Dollfus et al.
Nanotechnology, 2019, 30 (2), pp.025201. ⟨10.1088/1361-6528/aae7df⟩
Journal articles hal-02350992v1
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A Steep-Slope MoS 2 -Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

Demetrio Logoteta , Marco Pala , Jean Choukroun , Philippe Dollfus , Giuseppe Iannaccone et al.
IEEE Electron Device Letters, 2019, 40 (9), pp.1550-1553. ⟨10.1109/LED.2019.2928131⟩
Journal articles hal-02350929v1

Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study

Corentin Grillet , Alessandro Cresti , Marco Pala
IEEE Transactions on Electron Devices, 2018, 65 (7), pp.3038-3044. ⟨10.1109/TED.2018.2834307⟩
Journal articles hal-01964683v1

Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

Marco G. Pala , D. Esseni
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (12), ⟨10.1103/PhysRevB.97.125310⟩
Journal articles hal-02351013v1

Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors

Jiang Cao , Demetrio Logoteta , Marco Pala , Alessandro Cresti
Journal of Physics D: Applied Physics, 2018, 51 (5), pp.055102. ⟨10.1088/1361-6463/aaa1b6⟩
Journal articles hal-01964684v1
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Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs

Demetrio Logoteta , Nicolas Cavassilas , Alessandro Cresti , Marco Pala , Marc Bescond et al.
IEEE Transactions on Electron Devices, 2018, 65 (2), pp.424 - 430. ⟨10.1109/TED.2017.2785123⟩
Journal articles hal-01761818v1

Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures

Jiang Cao , Jejune Park , François Triozon , Marco Pala , Alessandro Cresti et al.
Composants nanoélectroniques, 2018, 18 (1), ⟨10.21494/ISTE.OP.2018.0222⟩
Journal articles hal-01964713v1
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On the origins of transport inefficiencies in mesoscopic networks

Sébastien Toussaint , Frederico Martins , Sebastien Faniel , Marco Pala , L. Desplanque et al.
Scientific Reports, 2018, 8, pp.3017. ⟨10.1038/s41598-018-21250-y⟩
Journal articles hal-01920614v1

A review of selected topics in physics based modeling for tunnel field-effect transistors

Marco G. Pala , David Esseni , Pierpaolo Palestri , Cem Alper , Tommaso Rollo et al.
Semiconductor Science and Technology, 2017, 32 (8), pp.083005. ⟨10.1088/1361-6641/aa6fca⟩
Journal articles hal-02351119v1

Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs

Corentin Grillet , Demetrio Logoteta , Alessandro Cresti , Marco G. Pala
IEEE Transactions on Electron Devices, 2017, 64 (5), pp.2425-2431. ⟨10.1109/TED.2017.2679226⟩
Journal articles hal-01694193v1

Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides

Jiang Cao , Alessandro Cresti , David Esseni , Marco Pala
Solid-State Electronics, 2016, 116, pp.1-7. ⟨10.1016/j.sse.2015.11.003⟩
Journal articles hal-01964708v1

Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study

Jiang Cao , Demetrio Logoteta , Sibel Ozkaya , Blanca Biel , Alessandro Cresti et al.
IEEE Transactions on Electron Devices, 2016, 63 (11), pp.4388-4394. ⟨10.1109/TED.2016.2605144⟩
Journal articles hal-01434942v1

Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors

Marco Pala , Corentin Grillet , Jiang Cao , Demetrio Logoteta , Alessandro Cresti et al.
Journal of Computational Electronics, 2016, 15 (4), pp.1240-1247. ⟨10.1007/s10825-016-0900-8⟩
Journal articles hal-01964711v1
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Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy

Peng Liu , Frederico Martins , Benoit Hackens , L. Desplanque , Xavier Wallart et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (7), pp.075313. ⟨10.1103/PhysRevB.91.075313⟩
Journal articles hal-01121907v1

Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs

David Esseni , Marco Pala , Tommaso Rollo
IEEE Transactions on Electron Devices, 2015, 62 (9), pp.3084-3091. ⟨10.1109/TED.2015.2458171⟩
Journal articles hal-02054286v1

Exploiting Hetero-Junctions to Improve the Performance of III–V Nanowire Tunnel-FETs

Marco Pala , Sylvan Brocard
IEEE Journal of the Electron Devices Society, 2015, 3 (3), pp.115-121. ⟨10.1109/JEDS.2015.2395719⟩
Journal articles hal-02057583v1

Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study

M. Pala , Alessandro Cresti
Journal of Applied Physics, 2015, 117 (8), pp.084313. ⟨10.1063/1.4913511⟩
Journal articles hal-01964705v1

(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects

D. Esseni , M. Pala , A. Revelant , P. Palestri , L. Selmi et al.
ECS Transactions, 2014, 64 (6), pp.581-595. ⟨10.1149/06406.0581ecst⟩
Journal articles hal-02065983v1

(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs

M. Pala , D. Esseni
ECS Transactions, 2014, 61 (2), pp.237-251. ⟨10.1149/06102.0237ecst⟩
Journal articles hal-02065902v1

Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading

S. Brocard , M.G. Pala , D. Esseni
IEEE Electron Device Letters, 2014, 35 (2), pp.184-186. ⟨10.1109/LED.2013.2295884⟩
Journal articles hal-01002251v1
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Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins , S. Faniel , B. Rosenow , Hermann Sellier , Serge Huant et al.
Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩
Journal articles hal-00932989v1

Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs

F. Conzatti , M.G. Pala , D. Esseni , E. Bano
Solid-State Electronics, 2013, 88, pp.49-53. ⟨10.1016/j.sse.2013.04.005⟩
Journal articles hal-01002096v1

Interface Traps in InAs Nanowire Tunnel FETs and MOSFET -Part II: Comparative Analysis and Trap-Induced Variability

D. Esseni , M.G. Pala
IEEE Transactions on Electron Devices, 2013, 60 (9), pp.2802-2807. ⟨10.1109/TED.2013.2274197⟩
Journal articles hal-01017503v1
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Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

Serge Huant , S. Baltazar , Peng Liu , Hermann Sellier , B. Hackens et al.
AIP Conference Proceedings, 2013, 1566, pp.229. ⟨10.1063/1.4848369⟩
Journal articles hal-00933050v1
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Scanning Gate Spectroscopy of transport across a Quantum Hall Nano-Island

F. Martins , S. Faniel , B. Rosenow , M. G. Pala , Hermann Sellier et al.
New Journal of Physics, 2013, 15, pp.013049. ⟨10.1088/1367-2630/15/1/013049⟩
Journal articles hal-00932990v1

Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs --Part I: Model Description and Single Trap Analysis in Tunnel-FETs

M. G. Pala , D. Esseni
IEEE Transactions on Electron Devices, 2013, 60 (9), pp.2795-2801. ⟨10.1109/ted.2013.2274196⟩
Journal articles hal-01017492v1
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A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks

Marco Pala , Hermann Sellier , Benoit Hackens , Frederico Martins , Vincent Bayot et al.
Nanoscale Research Letters, 2012, 7, pp.472. ⟨10.1186/1556-276X-7-472⟩
Journal articles hal-00932991v1

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

F. Conzatti , M. Pala , D. Esseni , Edwige Bano , L. Selmi et al.
IEEE Transactions on Electron Devices, 2012, 59 (8), pp.2085-2092
Journal articles hal-02006109v1
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Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox

M. G. Pala , S. Baltazar , Peng Liu , Hermann Sellier , B. Hackens et al.
Physical Review Letters, 2012, 108, pp.076802. ⟨10.1103/PHYSREVLETT.108.076802⟩
Journal articles hal-00709528v1
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Rare primary mitochondrial DNA mutations and probable synergistic variants in Leber's hereditary optic neuropathy

A. Achilli , L. Iommarini , A. Olivieri , M. Pala , Hooshiar Kashani et al.
PLoS ONE, 2012, 7 (8), Non spécifié. ⟨10.1371/journal.pone.0042242⟩
Journal articles hal-03404097v1

Locating an individual quantum hall island inside a quantum ring

F. Martins , S. Faniel , M.G. Pala , Hermann Sellier , Serge Huant et al.
AIP Conference Proceedings, 2012, ISBN 978-0-7354-1194-4, 1566, pp.299-300. ⟨10.1063/1.4848404⟩
Journal articles hal-00797345v1

Superconducting proximity effect in interacting quantum dots revealed by shot noise

A. Braggio , M.G. Pala , M. Governale , J. König
Solid State Communications, 2011, 151, pp.155. ⟨10.1016/j.ssc.2010.10.043⟩
Journal articles hal-00596337v1

A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

Alessandro Cresti , Marco Pala , Stefano Poli , Mireille Mouis , Gérard Ghibaudo et al.
IEEE Transactions on Electron Devices, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩
Journal articles hal-02419609v1
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Scanning-Gate Microscopy of Semiconductor Nanostructures: An Overview

F. Martins , B. Hackens , Hermann Sellier , Peng Liu , M. Pala et al.
Acta Physica Polonica A, 2011, 119 (5), pp.569-575. ⟨10.12693/APhysPolA.119.569⟩
Journal articles hal-00834932v1
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On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

Hermann Sellier , B. Hackens , M. G. Pala , F. Martins , S. Baltazar et al.
Semiconductor Science and Technology, 2011, 26 (6), pp.064008. ⟨10.1088/0268-1242/26/6/064008⟩
Journal articles hal-00709523v1

Spin-orbit coupling and phase-coherence in InAs nanowires

Estevez Hernandez S. , M. Akabori , K. Sladek , Volk Ch. , S. Alagha et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.235303. ⟨10.1103/PhysRevB.82.235303⟩
Journal articles hal-00596334v1

Superconducting proximity effect in interacting double-dot systems

J.D. Eldridge , M.G. Pala , M. Governale , J. König
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.184507. ⟨10.1103/PhysRevB.82.184507⟩
Journal articles hal-00596333v1
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Imaging Coulomb islands in a quantum Hall interferometer

B. Hackens , F. Martins , S. Faniel , C. A. Dutu , Hermann Sellier et al.
Nature Communications, 2010, 1, pp.39. ⟨10.1038/NCOMMS1038⟩
Journal articles hal-00709461v1

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

K. Rogdakis , S. Poli , Edwige Bano , K. Zekentes , M. G. Pala et al.
Nanotechnology, 2009, 20 (29), pp.295202
Journal articles hal-00596134v1

3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity

M. Bescond , M. Lannoo , Fabienne Michelini , L. Raymond , Marco Pala et al.
Microelectronics Journal, 2009, 40, pp.756-758
Journal articles hal-00596132v1

Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects

M. G. Pala , S. Baltazar , F. Martins , B. Hackens , Hermann Sellier et al.
Nanotechnology, 2009, 20 (26), pp.264021. ⟨10.1088/0957-4484/20/26/264021⟩
Journal articles hal-00709514v1

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

S. Poli , Marco Pala
IEEE Electron Device Letters, 2009, 30 (11), pp.1212-1214
Journal articles hal-00596075v1

Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs

S. Poli , M.G. Pala , T. Poiroux
IEEE Transactions on Electron Devices, 2009, 56 (6), pp.1191-1198
Journal articles hal-00596091v1

Nonlocal Andreev transport through an interacting quantum dot

D. Futterer , M. Governale , M.G. Pala , J. König
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79 (5), pp.054505
Journal articles hal-00596141v1

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M.G. Pala , A. Poncet et al.
physica status solidi (c), 2009, 6 (6), pp.1408-1411
Journal articles hal-00596139v1

Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs

C. Buran , M.G. Pala , M. Bescond , M. Dubois , M. Mouis et al.
IEEE Transactions on Electron Devices, 2009, 56 (10), pp.2186-2192
Journal articles hal-00596081v1

Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

S. Poli , M.G. Pala , T. Poiroux , S. Deleonibus , G. Baccarani et al.
IEEE Transactions on Electron Devices, 2008, 55 (11), pp.2968-2976
Journal articles hal-00391742v1

Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT

C. Buran , M. G. Pala , M. Bescond , M. Mouis
Journal of Computational Electronics, 2008, 7 (3, 1569-1572)
Journal articles hal-00391739v1

Local density of states in mesoscopic samples from scanning gate microscopy

M. G. Pala , B. Hackens , F. Martins , Hermann Sellier , V. Bayot et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.125310. ⟨10.1103/PhysRevB.77.125310⟩
Journal articles hal-00193195v1

Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads

M. Governale , M.G. Pala , J. König
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77 (13, 134513)
Journal articles hal-00391748v1
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Imaging electron wave functions inside open quantum rings

F. Martins , B. Hackens , Marco G. Pala , Thierry Ouisse , Hermann Sellier et al.
Physical Review Letters, 2007, 99, pp.136807. ⟨10.1103/PhysRevLett.99.136807⟩
Journal articles hal-00193197v1

Non-Equilibrium Josephson and Andreev Current through Interacting Quantum Dots

M.G. Pala , M. Governale , J. König
New Journal of Physics, 2007, 9, pp.278
Journal articles hal-00393594v1

Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability

Denis Rideau , Y. Oussaiti , J. Grebot , R. Helleboid , A. Lopez et al.
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Sept. 27-29, 2021, Virtual conference Dallas, US, Sep 2021, Dallas, United States
Conference papers hal-03374008v1
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Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations

Yanjie Shao , Marco G. Pala , David Esseni , Jesus del Alamo
2021 IEEE 67th International Electron Devices Meeting (IEDM), Dec 2021, San Francisco, United States. pp.32.1.1-32.1.4, ⟨10.1109/IEDM19574.2021.9720540⟩
Conference papers hal-03793958v1

Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics

Thibauld Cazimajou , Marco Pala , Jérôme Saint-Martin , Denis Rideau , Philippe Dollfus et al.
21st International Workshop on Computational Nanotechnology (IWCN) 2021, May 2021, Online, South Korea
Conference papers hal-03254209v1
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Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability

Marco G. Pala , D. Rideau , Y. Oussaiti , J. Grebot , R. Helleboid et al.
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.293-296, ⟨10.1109/SISPAD54002.2021.9592567⟩
Conference papers hal-03445562v1
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Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism

Marco G. Pala , David Esseni
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.3-6, ⟨10.23919/SISPAD49475.2020.9241641⟩
Conference papers hal-03029922v1
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Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes

Y. Oussaiti , D. Rideau , J.R. Manouvrier , V. Quenette , H. Wehbe-Alause et al.
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.145-148, ⟨10.23919/SISPAD49475.2020.9241648⟩
Conference papers hal-03029924v1
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Full Band Monte Carlo simulation of phonon transfer at interfaces

N.D. Le , B. Davier , P. Dollfus , Marco G. Pala , A. Bournel et al.
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.27-30, ⟨10.23919/SISPAD49475.2020.9241629⟩
Conference papers hal-03029928v1
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Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors

Marco Pala , D. Esseni
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870406⟩
Conference papers hal-02404574v1

Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices

Marco Pala , Oves Badami , David Esseni
2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.33.1.1-33.1.4, ⟨10.1109/IEDM.2018.8614613⟩
Conference papers hal-02350969v1

Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

Denis Rideau , Gabriel Mugny , Marco Pala , David Esseni
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2018, Austin, France. pp.224-227, ⟨10.1109/SISPAD.2018.8551706⟩
Conference papers hal-02350996v1

New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits

D. Esseni , O. Badami , F. Driussi , D. Lizzit , Marco G. Pala et al.
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Mar 2018, Kobe, Japan. pp.236-238, ⟨10.1109/EDTM.2018.8421501⟩
Conference papers hal-02351100v1

High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors

Marco G. Pala , Jean Choukroun , Shiang Fang , Efthimios Kaxiras , Philippe Dollfus et al.
48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩
Conference papers hal-02351006v1

Van der Waals tunnel field effect transistors with lateral momentum mismatch

Jiang Cao , Marco Pala , Alessandro Cresti
2D@Grenoble, Fondation Nanosciences, Apr 2017, Grenoble, France
Conference papers hal-01966731v1
Image document

Local stress engineering for the optimization of p-GaN gate HEMTs power devices

T Cosnier , L Lucci , A. Torres , M. Pala
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2017, Kamakura, Japan
Conference papers hal-01643379v1

Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs

Demetrio Logoteta , Nicolas Cavassilas , Marco Pala , Alessandro Cresti , Marc Bescond et al.
International Workshop on Computational Nanotechnology (IWCN 2017), Jun 2017, Windermere, United Kingdom
Conference papers hal-01966686v1

NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations

Marco G. Pala , Oves Badami , David Esseni
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, France. pp.35.1.1-35.1.4, ⟨10.1109/IEDM.2017.8268498⟩
Conference papers hal-02351115v1

Van der Waals tunnel field effect transistors with misoriented layers

Alessandro Cresti , Jiang Cao , Marco Pala
Graphene 2017, Mar 2017, Barcelona, Spain
Conference papers hal-01966757v1

VDD scaling of ultra-thin InAs MOSFETs: A full-quantum study

C. Grillet , M. Pala
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.108-111, ⟨10.1109/ULIS.2016.7440064⟩
Conference papers hal-02063643v1

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

G. Mugny , F.G. Pereira , D. Rideau , F. Triozon , Y.M. Niquet et al.
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩
Conference papers hal-02065220v1

Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs

Marco G. Pala , Barbara de Salvo , P. Morin , Gérard Ghibaudo
GRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop, M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France
Conference papers hal-02068476v1

Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier

Luca Lucci , Jean-Charles Barbé , Marco Pala
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.128-131, ⟨10.1109/SISPAD.2015.7292275⟩
Conference papers hal-02067223v1

A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges

Jiang Cao , Demetrio Logoteta , Sibel Ozkaya , Blanca Biel , Alessandro Cresti et al.
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.12.5.1 - 12.5.4, ⟨10.1109/IEDM.2015.7409684⟩
Conference papers hal-01967913v1

Quantum simulation of tunnel field-effect transistors based on a vertical heterojunction of 2D transition metal dichalcogenides

Jiang Cao , Marco Pala , Alessandro Cresti , David Esseni
Annual meeting of the GDRi Graphene and Nanotubes, Nov 2015, Aussois, France
Conference papers hal-01966736v1

Quantum simulation of tunnel field-effect transistors based on transition metal dichalcogenides

Jiang Cao , Marco G. Pala , Alessandro Cresti , David Esseni
Graphene 2015, Mar 2015, Bilbao, Spain
Conference papers hal-01968207v1

Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region

F. Pereira , D. Rideau , O. Nier , C. Tavernier , F. Triozon et al.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.49-52, ⟨10.1109/ULIS.2015.7063770⟩
Conference papers hal-02063611v1

Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals

Jiang Cao , Marco Pala , Alessandro Cresti , David Esseni
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.245-248, ⟨10.1109/ULIS.2015.7063819⟩
Conference papers hal-01966809v1

(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs

Marco Pala , David Esseni
225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing, D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States
Conference papers hal-02065948v1

A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies

B. Desalvo , P. Morin , M. Pala , G. Ghibaudo , O. Rozeau et al.
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.7.2.1-7.2.4, ⟨10.1109/IEDM.2014.7047002⟩
Conference papers hal-02049421v1

Quantum simulation of self-heating effects in rough Si nanowire FETs

Marco Pala , Alessandro Cresti
17th International Workshop on Computational Electronics (IWCE 2014), Jun 2014, Paris, France. pp.1-3, ⟨10.1109/IWCE.2014.6865827⟩
Conference papers hal-01966681v1

(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects

David Esseni , Marco Pala , Revelant A. , P. Palestri , M. Li et al.
226th ECS and SMEQ Joint International Meeting: SiGe,Ge and Related Compounds: Materials, Processing and Devices 6, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico
Conference papers hal-02066006v1

Impact of Surface Roughness on Thermoelectric Properties of Silicon Nanotubes

Tomofumi Zushi , Alessandro Cresti , Marco G. Pala , Keisaku Yamada , Takanobu Watanabe et al.
61st JSAP (Japan Society of Applied Physics) Spring Meeting, Mar 2014, Tokyo, Japan
Conference papers hal-01966677v1

Quantum simulation of a 2-D heterojunction interlayer tunneling field effect transistor

Jiang Cao , Marco Pala , Alessandro Cresti , David Esseni
2nd Workshop Graphene in Grenoble, Fondation Nanosciences, Nov 2014, Grenoble, France
Conference papers hal-01966721v1

Coherence and Coulomb blockade in ultra-small quantum Hall islands

F. Martins , S. Faniel , Hermann Sellier , Serge Huant , M.G. Pala et al.
16ème Forum des Microscopies à Sondes Locales, 2013, Spa, Belgium. papier OC23, 41-42
Conference papers hal-00956273v1

Nanowires applications in the More Moore/More-Than-Moore perspectives

M. Mouis , J. W. Lee , M. Mongillo , M. Pala , A. Cresti et al.
E-MRS E-MRS 2013 Spring Meeting, Symposium K: Physics and technology of advanced extra functionality CMOS-based devices, May 2013, Strasbourg, France
Conference papers hal-01020753v1

Design Options for Hetero-Junction Tunnel FETs with High on Current and Steep Sub-VT Slope

S. Brocard , M.G. Pala , D. Esseni
IEDM 2013, Dec 2013, Washington, United States. pp.128-131, ⟨10.1109/IEDM.2013.6724567⟩
Conference papers hal-01074151v1

Scanning gate spectroscopy of a quantum Hall island near a quantum point contact

B. Hackens , F. Martins , S. Faniel , V. Bayot , B. Rosenow et al.
American Physical Society March Meeting, APS March Meeting 2013, 2013, Baltimore, MD, United States
Conference papers hal-00811773v1

A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks

H. Sellier , M. Pala , S. Baltazar , P. Liu , B. Hackens et al.
16th International Conference on Modulated Semiconductor Structures, MSS-16, 2013, Wroclaw, Poland
Conference papers hal-00878505v1

Towards self-powered systems: using nanostructures to harvest ambient energy

Ardila G. , Anne Kaminski-Cachopo , M. Pala , Cresti A. , L. Montès et al.
2nd Ukrainian-French Seminar "Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics", Apr 2013, Kyiv, Ukraine
Conference papers hal-01182195v1

Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring

B. Hackens , F. Martins , S. Faniel , V. Bayot , M. Pala et al.
American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States
Conference papers hal-00579035v1

A Study for Thermoelectric Properties of SiC nanowires

H. Choi , M. Pala , L. Latu-Romain , Edwige Bano
International Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States
Conference papers hal-00650068v1

A Study for Thermoelectric Properties of Si nanowires

J.H. Choi , M. Pala , L. Latu-Romain , Edwige Bano
European Korean Congress, 2011, Paris, France
Conference papers hal-00650059v1

Imaging quantum Hall Coulomb islands inside a quantum ring

F. Martins , B. Hackens , S. Faniel , V. Bayot , M. Pala et al.
American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States
Conference papers hal-00579036v1

Elastic and inelastic scattering in SiNWs

M.G. Pala
1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, Oct 2010, Kiev, Ukraine
Conference papers hal-00604930v1

Non-equilibrium transport through coupled quantum dot-metallic island systems

M.G. Pala
Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter (DPG Meeting), Mar 2010, Dresden, Italy
Conference papers hal-00604752v1

Full-3D real-space treatment of surface roughness in double gate MOSFETs

C. Buran , M. G. Pala , S. Poli , M. Mouis
Int. Conference on Ultimate Integration of Silicon, Aachen,, Mar 2009, Germany. pp.47-50
Conference papers hal-00604232v1

Etude du transport dans les composants ultracourts sur SOI

C. Buran , M.G. Pala , S. Poli , M. Mouis
Journées Transport balistique du GDR Nanoélectronique, May 2009, Orsay, France
Conference papers hal-00604956v1

Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet et al.
Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.91-94
Conference papers hal-00604239v1

Influence of ionized impurities in Silicon Nanowire Transistors

M. Bescond , M. Lannoo , L. Raymond , Fabienne Michelini , M. G. Pala et al.
Proceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3, 2009, Beijing, China. pp.137-140
Conference papers hal-00603874v1

Simulation full-3D real-space NEGF du transport et du magnétotransport dans le FET à nanofil de Silicium

C. Buran , M.G. Pala , M. Bescond , M. Mouis
JNRDM 2009,, May 2009, Lyon, France
Conference papers hal-00604958v1

Full-3D real-space simulation of surface-roughness effects in double gate MOSFETs

C. Buran , M. G. Pala , S. Poli , M. Mouis
Proceedings of IWCE 2009, IEEE Conference Proceedings CFP09462-PRT, ISBN 978-1-4244-3926-3, May 2009, Beijing, China. pp.309-312
Conference papers hal-00603871v1

Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes

E. Buccafurri , A. Medjahdi , F. Calmon , R. Clerc , M. Pala et al.
European Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.237-241
Conference papers hal-00603719v1

Quantum transport in nanowire metal-oxide-semiconductor transistors: influence of dielectric confinement

M. Bescond , M. Lannoo , Fabienne Michelini , N. Cavassilas , M.G. Pala et al.
29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008 to be published in AIP Conference Proceedings Series, Jul 2008, -, France
Conference papers hal-00392554v1

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet et al.
ISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France
Conference papers hal-00391921v1

Full 3D real-space NEGF simulation of transport and magnetotransport in Si-Nanowire FETs

C. Buran , M.G. Pala , M. Mouis , M. Bescond , M. Michelini et al.
Fringe workshop ESSDERC 08, Edinburgh, UK, Sep 2008, Edinburgh, Ireland
Conference papers hal-00392550v1

Imaging the electron local density of states inside buried semiconductor quantum rings

B. Hackens , F. Martins , M.G. Pala , H. Sellier , T. Ouisse et al.
29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008, Jul 2008, Rio de Janeiro, Brazil
Conference papers hal-00392551v1

Local Density of States from Scanning Gate Microscopy

M.G. Pala , B. Hackens , F. Martins , H. Sellier , V. Bayot et al.
Annual Meeting of the Deutsche Physikalische Gesellschaft and DPG - spring meeting of the Division Condensed Matter, Berlin, Feb 2008, Berlin, Germany
Conference papers hal-00392549v1

Scanning-Gate Microscopy images the electronic LDOS inside nanostructures

S. Huant , F. Martins , M.G. Pala , B. Hackens , H. Sellier et al.
11th International Conference on Non-contact Atomic Force Microscopy: NCAFM-2008, Madrid, September 16-19, 2008, Sep 2008, Madrid, Spain
Conference papers hal-00392555v1

Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy

Gustavo Ardila , Anne Kaminski-Cachopo , Marco Pala , Alessandro Cresti , Laurent Montes et al.
A. Nazarov; F. Balestra; V. Kilchytska; D. Flandre. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting, Springer International Publishing, pp.223-240, 2014, 978-3-319-08803-7. ⟨10.1007/978-3-319-08804-4_11⟩
Book sections hal-01966696v1

Scanning Probe Electronic Imaging of Lithographically Patterned Quantum Rings

F. Martins , Hermann Sellier , M. Pala , B. Hackens , V. Bayot et al.
Ed. by V. Fomin. Physics of Quantum Rings, pp.107-121, 2014, Nanoscience and Nanotechnology, 978-3-642-39196-5. ⟨10.1007/978-3-642-39197-2⟩
Book sections hal-02049163v1

Nanowire Devices

Gérard Ghibaudo , Sylvain Barraud , Mikaël Cassé , Xin Peng Wang , Guo Qiang Lo et al.
Ed. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩
Book sections hal-02051240v1