Sandra Ruffenach
152
Documents
Identifiants chercheurs
Publications
Publications
Investigation of the interactions between biomolecules : a crossroad of physics, electronics, chemistry and biology1st International Conference on Physics of Semiconductor Devices, Renewable Energies and Environment (ICPSDREE 2022), Mebarka Daoudi, Nov 2024, Béchar, Algeria
Communication dans un congrès
hal-05002411
v1
|
|
|
|
Temperature dependance of Intrinsic Spin Orbit Coupling Gap in Graphene probed by Terahertz photoconductivity2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montréal, Canada. ⟨10.1109/irmmw-thz57677.2023.10299006⟩
Communication dans un congrès
hal-04304454
v1
|
Nonequilibrium Spectroscopies of Biomolecules: Evidence of Long-Range Electrodynamic Forces22nd International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Prof. Tilmann Kuhn, Aug 2023, Münster, Germany
Communication dans un congrès
hal-05002385
v1
|
|
|
|
Tunable Terahertz Cyclotron Emission from Two-Dimensional Dirac Fermions48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2023), Sep 2023, Montréal, Canada. pp.1-2, ⟨10.1109/irmmw-thz57677.2023.10298862⟩
Communication dans un congrès
hal-04304349
v1
|
Transition from brownian to anomalous diffusion ofbiomolecules as a signature of long-range electrodynamic interactions26th International Conference on Noise and Fluctuations, Christoforos Theodorou, Oct 2023, Grenoble, France
Communication dans un congrès
hal-05002375
v1
|
|
THz spectroscopy to probe long-range electrodynamic interactions between proteins2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2022, Delft, France. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9896089⟩
Communication dans un congrès
hal-03837893
v1
|
|
Terahertz and fluorescence-correlation spectroscopies: two powerful tools for the investigation of biomolecules interactionsRecent trends in optical materials and photonic devices, Dec 2022, Bilaspur, India
Communication dans un congrès
hal-05002417
v1
|
|
Current-driven THz emission from AlGaN/GaN grating gate structures in the magnetic field2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2022, Delft, France. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9896031⟩
Communication dans un congrès
hal-03824957
v1
|
|
Long-range electrodynamic interactions between proteins assessed by THz spectroscopyTerahertz Emitters, Receivers, and Applications XIII, Aug 2022, San Diego, France. pp.122300H, ⟨10.1117/12.2641104⟩
Communication dans un congrès
hal-03824953
v1
|
|
|
|
THz spectroscopy to probe long-range electrodynamic interactions between proteinsTerahertz Emitters, Receivers, and Applications XIII, Aug 2022, Delft, France. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9896089⟩
Communication dans un congrès
hal-04919648
v1
|
|
|
Temperature-dependent low-frequency vibrational spectra of sodium magnesium chlorophyllin47th International conference on infrared, millimeter and terahertz waves (IRMMW-THZ 2022), 2022, Delft, France. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9895499⟩
Communication dans un congrès
hal-03824965
v1
|
Spectroscopy of temperature-driven single valley Dirac fermions in HgTe/CdHgTe quantum wells2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), Sep 2018, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region. ⟨10.1109/IRMMW-THz.2018.8510039⟩
Communication dans un congrès
hal-03037689
v1
|
|
High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar TransistorsFUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES, 2017, Sendai, Japan. pp.1-9, ⟨10.1142/S0129156416400115⟩
Communication dans un congrès
hal-01555388
v1
|
|
Terahertz probing of temperature-driven topological phase transition in HgCdTe bulk crystal and HgTe Quantum WellInternational Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Aug 2017, Cancun, Mexico
Communication dans un congrès
hal-01909294
v1
|
|
Substrate optimization for a planar antenna of terahertz Si field effect transistor detectorsMIKON 2016 - 21st International Conference on Microwave, Radar and Wireless Communications, May 2016, Krakow, Poland. pp.1
Communication dans un congrès
hal-01436882
v1
|
|
Magnetospectroscopy of double HgTe/CdHgTe quantum wellsXX International Symposium “Nanophysics and Nanoelectronics”, Mar 2016, Nizhny Novgorod, Russia. pp.1532-1538, ⟨10.1134/S1063782616110063⟩
Communication dans un congrès
hal-01406356
v1
|
|
Observation of topological phase transition by terahertz photoconductivity in HgTe-based transistors17th International Conference on II-VI Compounds, 2016, Paris, France. pp.534-537, ⟨10.1002/pssc.201510264⟩
Communication dans un congrès
istex
hal-01417831
v1
|
|
THz magnetospectroscopy of double HgTe quantum well2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2016, Copenhagen, Denmark. ⟨10.1109/IRMMW-THz.2016.7758790⟩
Communication dans un congrès
hal-01932629
v1
|
|
In-situ monitoring of CuInSe2 thin films growth by light scatteringE-MRS 2014 Spring Meeting, Symposium A, Thin-Film Chalcogenide Photovoltaic Materials, Daniel Abou-Ras; Marika Edoff; Takashi Minemoto; David Mitzi; Alessandro Romeo, May 2014, Lille, France. pp.276, ⟨10.1016/j.tsf.2014.10.083⟩
Communication dans un congrès
istex
hal-01101052
v1
|
|
|
|
InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012036, ⟨10.1088/1742-6596/647/1/012036⟩
Communication dans un congrès
hal-01249949
v1
|
InP Double Heterojunction Bipolar Transistor for detection above 1 THz2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2015, Hong Kong, China
Communication dans un congrès
hal-01336484
v1
|
|
|
|
Terahertz excitations in HgTe-based field effect transistors19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012009, ⟨10.1088/1742-6596/647/1/012009⟩
Communication dans un congrès
hal-01249955
v1
|
|
|
Terahertz studies of 2D and 3D topological transitions19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012037, ⟨10.1088/1742-6596/647/1/012037⟩
Communication dans un congrès
hal-01249953
v2
|
Experimental and theoretical investigations of the responsivity of field effect transistors based Terahertz detectors versus substrate thickness2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2015, Hong Kong, China
Communication dans un congrès
hal-01336481
v1
|
|
Sub-terahertz photoconductivity of Hg x Cd 1− x Te crystals with composition close to semiconductor-to-semimetal topological transitionInfrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on, Sep 2014, Tucson, United States. pp.1
Communication dans un congrès
hal-01265668
v1
|
|
Annealing effect of CdS thin films deposited by chemical bath deposition on different substratesPhotovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, Jun 2013, Tampa, United States. pp.1173, ⟨10.1109/PVSC.2013.6744349⟩
Communication dans un congrès
hal-01009387
v1
|
|
(112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuumE-MRS Spring Meeting, May 2012, Strasbourg, France. pp.143-147, ⟨10.1016/j.tsf.2013.01.053⟩
Communication dans un congrès
istex
hal-00820323
v1
|
|
Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InNE-MRS ICAM IUMRS 2011 Spring Meeting – Symposium H, May 2011, Nice, France. pp.91-94, ⟨10.1002/pssa.201100175⟩
Communication dans un congrès
istex
hal-00698910
v1
|
|
Phages recognizing the Indium Nitride semiconductor surface via their peptidesE-MRS Symposium on Peptide-based Materials - from Nanostructures to Applications, Jun 2010, Strasbourg (FRANCE), France. pp.143-147
Communication dans un congrès
hal-00633883
v1
|
|
Free electron properties and hydrogen in InN grown by MOVPEISGN3, Jul 2010, France. pp.1179-1182, ⟨10.1002/pssa.201001151⟩
Communication dans un congrès
istex
hal-00633877
v1
|
|
MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrateISGN3, Jul 2010, France. pp.1183-1186, ⟨10.1002/pssa.201001192⟩
Communication dans un congrès
istex
hal-00633882
v1
|
|
Managing gas purity in epitaxial growthItalian Crystal Growth Conference (ICGC 2010), Nov 2010, Parme, Italy. pp.809-812, ⟨10.1002/crat.201000610⟩
Communication dans un congrès
istex
hal-00633875
v1
|
|
The influence of thermal annealing on optical and electrical properties indium nitride films grown by MOVPESPIE Photonics West Opto, Jan 2010, San Francisco, United States
Communication dans un congrès
hal-00809370
v1
|
|
MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphireSymposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.24-28
Communication dans un congrès
hal-00540220
v1
|
|
Recent advances in the MOVPE growth of indium nitrideSymposium on Group III Nitride Semiconductors held at the 2009 EMRS Spring Meeting, Jun 2009, Strasbourg (FRANCE), France. pp.9-18
Communication dans un congrès
hal-00540219
v1
|
|
Peptides recognizing the InN semiconductor surfaceEMRS, Jun 2010, Strasbourg, France
Communication dans un congrès
hal-00526767
v1
|
|
Natural oxidation of InN quantum dots: the role of cubic InNEMRS Spring Meeting 2009, Jun 2009, Strasbourg, France. pp.9
Communication dans un congrès
hal-00546122
v1
|
|
Investigation on low band gap nitride materials for micro- nanotechnologyIndo-French Workshop on Nanosciences and Nanotechnology, 2009, Delhi, India
Communication dans un congrès
hal-00575298
v1
|
|
Alternative precursors for MOVPE growth of InN and GaN at low temperature2nd International Symposium on the growth of III-NItrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2791, ⟨10.1016/j.jcrysgro.2009.01.038⟩
Communication dans un congrès
istex
hal-00390309
v1
|
|
InN excitonic deformation potentials determined experimentally2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩
Communication dans un congrès
istex
hal-00390295
v1
|
|
Recent advances in the MOVPE growth of Indium NitrideE-MRS Spring Meeting, Jun 2009, Strasbourg, France
Communication dans un congrès
hal-00807792
v1
|
|
Growth of InN films and nanostructures by MOVPE2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2761, ⟨10.1016/j.jcrysgro.2009.01.037⟩
Communication dans un congrès
istex
hal-00390294
v1
|
|
MOVPE growth of InN buffer layers on sapphire2nd International Symposium on the gGrowth of III-Nitrides, Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2787, ⟨10.1016/j.jcrysgro.2009.01.008⟩
Communication dans un congrès
istex
hal-00390306
v1
|
|
Optical, structural investigations and band-gap bowing parameter of GaInN alloys2nd International Symposium on Growth of III-Nitride (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2795, ⟨10.1016/j.jcrysgro.2009.01.009⟩
Communication dans un congrès
istex
hal-00390296
v1
|
|
Superconductivity of InN as an intrinsic property28th International Conference on the Physics of Semiconductors, Jul 2006, Austria. pp.137, ⟨10.1063/1.2729807⟩
Communication dans un congrès
hal-00546032
v1
|
|
Initial growth stages of MOVPE InN studied by AFM and specular reflectivity6th International Symposium on Blue Laser and Light Emitting Diodes, May 2006, Montpellier, France. pp.150
Communication dans un congrès
hal-00390130
v1
|
|
A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaNMRS Fall Meeting - GaN, AlN, InN and Related Materials Symposium, Nov 2005, Boston, United States. pp.625
Communication dans un congrès
hal-00546139
v1
|
|
Characterization of the blue emission of Tm/Er co-implanted GaNSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting, Nov 2005, Boston (MA), United States. pp.599-604
Communication dans un congrès
hal-00546130
v1
|
|
Superconductivity of InN with a well defined Fermi surface6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1679-1686
Communication dans un congrès
hal-00540403
v1
|
|
Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy6th International Conference on Nitride Semiconductors (ICNS-6), Aug 2005, Bremen (GERMANY), Germany. pp.1687-1690
Communication dans un congrès
hal-00546075
v1
|
|
Optical properties of high-temperature annealed Eu-implanted GaNMeeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.797-801
Communication dans un congrès
hal-00540398
v1
|
|
High temperature annealing of rare earth implanted GaN films: Structural and optical propertiesMeeting of the European-Materials-Research-Society, May 2005, Strasbourg (FRANCE), France. pp.750-758
Communication dans un congrès
hal-00540402
v1
|
|
Growth of InN quantum dots by MOVPE4th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4), Jun 2004, St Petersburg (RUSSIA), Russia. pp.826-832
Communication dans un congrès
hal-00540424
v1
|
|
Optical investigations on si-doped InN films7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1379-1383
Communication dans un congrès
hal-00540416
v1
|
|
Growth Studies and Nanoscale Strain Profiles of InN Quantum DotsMRS Fall Meeting, Symposium FF, Nov 2005, Boston, United States
Communication dans un congrès
hal-00390297
v1
|
|
Growth and properties of Indium nitride thin films and InN nanostructures18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society, Oct 2005, Sydney (AUSTRALIA), Australia. pp.856-857
Communication dans un congrès
hal-00390131
v1
|
|
Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVDInternational Workshop on Nitrides Semiconductors (IWN 2004), Jul 2004, Pittsburgh (PA), United States. pp.2309-2315
Communication dans un congrès
hal-00540427
v1
|
|
UV photoreflectance for wide band gap nitride characterizationSymposium on Optical and X-Ray Metrology for Advanced Device Materials Characterization, Jun 2003, Strasbourg (FRANCE), France. pp.75-78
Communication dans un congrès
hal-00540433
v1
|
|
MOVPE growth of InN films and quantum dots1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.15-21
Communication dans un congrès
hal-00539952
v1
|
|
Growth and characterisation of Eu doped GaN thin filmsMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.721-728
Communication dans un congrès
hal-00540441
v1
|
|
The value of the direct bandgap of InN: a re-examination3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1425-1428
Communication dans un congrès
hal-00540437
v1
|
|
Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVDSpring Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.527-535
Communication dans un congrès
hal-00540446
v1
|
|
Growth of InN layers by MOVPE using different substratesMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.517-526
Communication dans un congrès
hal-00540449
v1
|
|
Amorphisation of GaN during processing with rare earth ion beamsMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.737-745
Communication dans un congrès
hal-00540440
v1
|
|
Raman scattering in InN films and nanostructuresMeeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.581-589
Communication dans un congrès
hal-00540444
v1
|
|
Absorption and Raman scattering processes in InN films and dots1st International Workshop on Indium Nitride, Nov 2003, Fremantle (AUSTRALIA), Australia. pp.22-28
Communication dans un congrès
hal-00539955
v1
|
|
Strain-induced correlations between the phonon frequencies of indium nitride3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3), Oct 2003, Acireale (ITALY), Italy. pp.1420-1424
Communication dans un congrès
hal-00539944
v1
|
|
Equifrequency surfaces in GaN/sapphire photonic crystalsInternational Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), Jul 2002, TOULOUSE (FRANCE), France. pp.423-425
Communication dans un congrès
hal-00477213
v1
|
|
Modeling of nitride semiconductor based double heterostructure tunnel diodesSymposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.227-232
Communication dans un congrès
hal-00540478
v1
|
|
High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications.Symposium on New Applications for Wide-Bandgap Semiconductors, Apr 2003, SAN FRANCISCO (CA), United States. pp.233-238
Communication dans un congrès
hal-00540477
v1
|
|
Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications5th International Conference on Nitride Semiconductors (ICNS-5), May 2003, NARA (JAPAN), Japan. pp.2851-2854
Communication dans un congrès
hal-00539936
v1
|
|
Modeling of the incorporation of aluminum in Ga1-xAlxM (M=As or N) alloys grown by MOCVD7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM, Sweden. pp.1153-1156
Communication dans un congrès
hal-00546769
v1
|
|
The exciton-polariton effect on the fluorescence properties of GaN on sapphire2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY, Japan. pp.639-643
Communication dans un congrès
hal-00545873
v1
|
|
Characterization of ALN buffer layers on (0001)-sapphire substrates2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY (JAPAN), Japan. pp.282-286
Communication dans un congrès
hal-00546761
v1
|
Response to "Comment on 'Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition'" Appl. Phys. Lett. 87, 176101 (2005)2005, pp.87, 176102. ⟨10.1063/1.2117613⟩
Autre publication scientifique
hal-00540414
v1
|
|
|
Unveiling Long-Range Forces in Light Harvesting Proteins: Pivotal Roles of Temperature and Light2024
Pré-publication, Document de travail
hal-04828945
v1
|
Chargement...
Chargement...