SJ

Sandrine Juillaguet

131
Documents
Affiliations actuelles
  • Laboratoire Charles Coulomb (L2C)
  • Axe Physique Appliquée (L2C) (PA)
  • Axe Physique Appliquée (L2C) (PA)
  • Groupe d'étude des semiconducteurs (GES)
  • Laboratoire Charles Coulomb (L2C)
Identifiants chercheurs

Publications

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Publications

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Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2

Vincent Astié , Felipe Wasem Klein , Houssin Makhlouf , Matthieu Paillet , Jean-Roch Huntzinger et al.
Physical Chemistry Chemical Physics, 2024, 26 (40), pp.25772-25779. ⟨10.1039/D4CP00603H⟩
Article dans une revue hal-04734922 v1
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Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Julien Bassaler , Jash Mehta , Idriss Abid , Leszek Konczewicz , Sandrine Juillaguet et al.
Advanced Electronic Materials, In press, ⟨10.1002/aelm.202400069⟩
Article dans une revue hal-04665123 v1
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Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size

Felipe Wasem Klein , Jean-Roch Huntzinger , Vincent Astié , Damien Voiry , Romain Parret et al.
Beilstein Journal of Nanotechnology, 2024, 15, pp.279-296. ⟨10.3762/bjnano.15.26⟩
Article dans une revue hal-04747945 v1
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Synthesis and characterization of aluminum doped zinc oxide nanoparticles via a novel and low cost aqueous chemical process

Abdoul-Razak Moussa Tankari , K. Medjnoun , M. Nouiri , Olivier Briot , S. Juillaguet et al.
Materials Letters, 2023, 353, pp.135230. ⟨10.1016/j.matlet.2023.135230⟩
Article dans une revue hal-04313143 v1
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Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

Leszek Konczewicz , Sandrine Juillaguet , Marcin Zajac , Elzbieta Litwin-Staszewska , Mohamed Al Khalfioui et al.
Physica Status Solidi A (applications and materials science), 2023, Nitride Semiconductors, 220 (16), pp.2200769. ⟨10.1002/pssa.202200769⟩
Article dans une revue hal-04248758 v1
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Electrical Transport Properties of Highly Doped N-Type GaN Materials

L Konczewicz , E Litwin-Staszewska , M Zajac , H Turski , M Bockowski et al.
Semiconductor Science and Technology, 2022, 37 (5), pp.055012. ⟨10.1088/1361-6641/ac5e01⟩
Article dans une revue hal-03845953 v1
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Negative Magnetoresistivity in Highly Doped n-Type GaN

Leszek Konczewicz , Malgorzata Iwinska , Elzbieta Litwin-Staszewska , Marcin Zajac , Henryk Turski et al.
Materials, 2022, 15 (20), pp.7069. ⟨10.3390/ma15207069⟩
Article dans une revue hal-03864839 v1
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Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

Colin Avogadri , Sébastian Gebert , Sergey Krishtopenko , Ivanovitch Castillo Arvelo , Christophe Consejo et al.
Physical Review Research, 2022, 4 (4), pp.L042042. ⟨10.1103/physrevresearch.4.l042042⟩
Article dans une revue hal-03939599 v2
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p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

Maciej Zajac , Leszek Konczewicz , Elzbieta Litwin-Staszewska , M. Iwinska , R. Kucharski et al.
Journal of Applied Physics, 2021, 129 (13), pp.135702. ⟨10.1063/5.0038524⟩
Article dans une revue hal-03416929 v1
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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

L. Konczewicz , S. Juillaguet , E. Litwin-Staszewska , R. Piotrzkowski , H. Peyre et al.
Journal of Applied Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩
Article dans une revue hal-02931592 v1

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

T. Sledziewski , M. Vivona , K. Alassaad , Pawel Kwasnicki , R. Arvinte et al.
Journal of Applied Physics, 2016, 120 (20), pp.205701. ⟨10.1063/1.4967301⟩
Article dans une revue hal-01440539 v1

Influence of AlN thickness on AlGaN epilayer grown by MOCVD

M. Jayasakthi , Sandrine Juillaguet , Herve Peyre , Leszek Konczewicz , K. Baskar et al.
Superlattices and Microstructures, 2016, 98, pp.515-521. ⟨10.1016/j.spmi.2016.08.053⟩
Article dans une revue hal-01407865 v1

Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)

C. Bouhafs , V. Darakchieva , I. L. Persson , Antoine Tiberj , P. O. A. Persson et al.
Journal of Applied Physics, 2015, 117 (8), pp.085701. ⟨10.1063/1.4908216⟩
Article dans une revue hal-01200762 v1
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Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.

Kassem Alassaad , Véronique Soulière , François Cauwet , Hervé Peyre , Davy Carole et al.
Acta Materialia, 2014, 75, pp.219-226. ⟨10.1016/j.actamat.2014.04.057⟩
Article dans une revue hal-01023271 v1

Stacking faults in intrinsic and N-doped 4HSiC: true influence of the N-doping on their multiplicity

Gabrielle Regula , Maryse Lancin , Bernard Pichaud , Thomas Neisius , Rachid Daineche et al.
Philosophical Magazine, 2013, 93 (10-12), pp.1317-1325. ⟨10.1080/14786435.2012.745018⟩
Article dans une revue hal-01936279 v1

Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC

Jianwu Sun , V. Khranovskyy , M. Mexis , M. Eriksson , M. Syvajarvi et al.
Journal of Luminescence, 2012, 132, pp.122-127. ⟨10.1016/j.jlumin.2011.08.015⟩
Article dans une revue istex hal-00655907 v1

Effect of initial substrate conditions on growth of cubic silicon carbide

R. Vasiliauskas , M. Marinova , M. Syvajarvi , R. Liljedahl , Georgios Zoulis et al.
Journal of Crystal Growth, 2011, 324, pp.7-14. ⟨10.1016/j.jcrysgro.2011.03.024⟩
Article dans une revue hal-00653277 v1

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

Maya Marinova , Ariadne Andreadou , Jian Wu Sun , Jean Lorenzzi , Alkyoni Mantzari et al.
Materials Science Forum, 2011, Materials Science Forum, 679-680, pp.241-244. ⟨10.4028/www.scientific.net/MSF.679-680.241⟩
Article dans une revue hal-02511264 v1

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Teddy Robert , Maya Marinova , Sandrine Juillaguet , Anne Henry , Efstathios K. Polychroniadis et al.
Materials Science Forum, 2011, Materials Science Forum, 679-680, pp.314-317. ⟨10.4028/www.scientific.net/MSF.679-680.314⟩
Article dans une revue hal-02507811 v1
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Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC

Jianwu Sun , Ivan Gueorguiev Ivanov , Sandrine Juillaguet , Jean Camassel
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.195201. ⟨10.1103/PhysRevB.83.195201⟩
Article dans une revue hal-00653305 v1

Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC

J. W. Sun , G. Zoulis , J. C. Lorenzzi , N. Jegenyes , Herve Peyre et al.
Journal of Applied Physics, 2010, 108, pp.013503. ⟨10.1063/1.3455999⟩
Article dans une revue hal-00536664 v1

Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

M. Zielinski , M. Portail , T. Chassagne , S. Juillaguet , H. Peyre
Journal of Crystal Growth, 2008, 310 (13), pp.3174-3182. ⟨10.1016/j.jcrysgro.2008.03.022⟩
Article dans une revue istex hal-00389307 v1

Optical properties of as-grown and process-induced stacking faults in 4H-SiC

Jean Camassel , Sandrine Juillaguet
physica status solidi (b), 2008, 245, pp.1337-1355. ⟨10.1002/pssb.200844055⟩
Article dans une revue hal-00539644 v1

Quantum confinement effect of ZnO nanocrystallites embedded in In2O3 films

M. Stoehr , Sandrine Juillaguet , M. Marshall , J. G. Wen
Journal of Applied Physics, 2008, 104, pp.084906. ⟨10.1063/1.3000463⟩
Article dans une revue hal-00539808 v1
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Prospects for 3C-SiC bulk crystal growth

Didier Chaussende , Frédéric J. Mercier , Alexandre Boulle , Florine Conchon , Maher Soueidan et al.
Journal of Crystal Growth, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩
Article dans une revue hal-00174181 v1

Nonlinear dependence of the magnetophotoluminescence energies of asymmetric GaAs/Ga0.67Al0.33As quantum wells on an external magnetic field

W. Zawadzki , S. Bonifacie , Sandrine Juillaguet , Christophe Chaubet , Andre Raymond et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.245319. ⟨10.1103/PhysRevB.75.245319⟩
Article dans une revue hal-00539643 v1

Screening the built-in electric field in 4H silicon carbide stacking faults

Sandrine Juillaguet , Jean Camassel , M. Albrecht , T. Chassagne
Applied Physics Letters, 2007, 90, pp.111902. ⟨10.1063/1.2713169⟩
Article dans une revue hal-00541628 v1

Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

Jean Camassel , Sandrine Juillaguet
Journal of Physics D: Applied Physics, 2007, 40 (20), pp.6264-6277. ⟨10.1088/0022-3727/40/20/S11⟩
Article dans une revue istex hal-00389851 v1

Cathodoluminescence investigation of stacking faults extension in 4H-SiC

Sandrine Juillaguet , M. Albrecht , Jean Camassel , T. Chassagne
Physica Status Solidi A (applications and materials science), 2007, 204, pp.2222-2228. ⟨10.1002/pssa.200675469⟩
Article dans une revue istex hal-00539641 v1

Application of LTPL investigation methods to CVD-grown SiC

Jean Camassel , Sandrine Juillaguet , Marcin Zielinski , Carole Balloud
Chemical Vapor Deposition, 2006, 12 (8-9), pp.549-556. ⟨10.1002/cvde.200606472⟩
Article dans une revue istex hal-00389876 v1

Characterization of a 3C-SiC single domain grown on 6H-SiC(0001) by a vapor-liquid-solid mechanism

Maher Soueidan , Gabriel Ferro , B. Nsouli , Mohamad Roumie , Efsthatios Polychroniadis et al.
Crystal Growth & Design, 2006, 6 (11), pp.2598-2602. ⟨10.1021/cg0603523⟩
Article dans une revue hal-00389882 v1

Characterization of bulk <111> 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

L. Latu-Romain , D. Chaussende , C. Balloud , S. Juillaguet , L. Rapenne et al.
Silicon carbide and related materials, 2006, pp.527-529 / 99-102
Article dans une revue hal-00394389 v1

Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique

R. Al Asmar , J.-P. Atanas , M. Ajataka , Y. Zaatar , G. Ferblantier et al.
Journal of Crystal Growth, 2005, 279 (3-4), pp.394-402. ⟨10.1016/j.jcrysgro.2005.02.035⟩
Article dans une revue istex hal-00329299 v1

Control of epitaxial layers grown on 4H-SiC: from 3C microcrystalline inclusions to type II quantum well structures

Sandrine Juillaguet , C. Balloud , V. Souliere , C. Sartel , Jean Camassel et al.
Physica Status Solidi A (applications and materials science), 2005, 202, pp.593-597. ⟨10.1002/pssa.200460435⟩
Article dans une revue istex hal-00541643 v1

Technical aspects of < 1120 > 4H-SiC MOSFET processing

Caroline Blanc , D. Tournier , V. Souliere , Sandrine Juillaguet , Sylvie Contreras et al.
Physica Status Solidi A (applications and materials science), 2005, 202, pp.680-685. ⟨10.1002/pssa.200460473⟩
Article dans une revue istex hal-00541644 v1

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

R. Al Asmar , Sandrine Juillaguet , M. Ramonda , Alain Giani , P. Combette et al.
Journal of Crystal Growth, 2005, 275 (3-4), pp.512-520. ⟨10.1016/j.jcrysgro.2004.12.034⟩
Article dans une revue istex hal-00541634 v1

Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method

Didier Chaussende , Carole Balloud , Laurent Auvray , Francis Baillet , Marcin Zielinski et al.
Materials Science Forum, 2004, 457-460, pp. 91-94. ⟨10.4028/0-87849-943-1.91⟩
Article dans une revue hal-00417942 v1

Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

I. Halidou , Z. Benzarti , T. Boufaden , B. El Jani , Sandrine Juillaguet et al.
Materials Science and Engineering: B, 2004, 110, pp.251-255. ⟨10.1016/j.mseb.2004.02.002⟩
Article dans une revue istex hal-00543759 v1

Optical properties of GaN grown on porous silicon substrate

T. Boufaden , A. Matoussi , S. Guermazi , S. Juillaguet , A. Toureille et al.
Physica Status Solidi A (applications and materials science), 2004, 201 (3), pp.582-587. ⟨10.1002/pssa.200306740⟩
Article dans une revue hal-00330454 v1

Discrete states of conduction electrons bound to magnetoacceptors in quantum wells

S. Bonifacie , Ym Meziani , Sandrine Juillaguet , Christophe Chaubet , Andre Raymond et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.165330. ⟨10.1103/PhysRevB.68.165330⟩
Article dans une revue hal-00543765 v1

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C-SiC on Si

G. Ferro , Jean Camassel , Sandrine Juillaguet , C. Balloud , Ek Polychroniadis et al.
Semiconductor Science & Technology, 2003, 18, pp.1015-1023
Article dans une revue hal-00543763 v1

Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime

Andre Raymond , Sandrine Juillaguet , I. Elmezouar , W. Zawadzki , Ml Sadowski et al.
Semiconductor Science & Technology, 1999, 14, pp.915-920
Article dans une revue hal-00543773 v1
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Morphology of InGaAs/InP QWs : from excitonic spectroscopy to HR-TEM analyses

J. Camassel , S. Juillaguet , R. Schwedler , K. Wolter , F. Baumann et al.
Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-99-C5-106. ⟨10.1051/jp4:1993518⟩
Article dans une revue istex jpa-00251604 v1

Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures

H. Peyre , F. Alsina , S. Juillaguet , E. Massone , J. Camassel et al.
Applied Surface Science, 1993, 63 (1-4), pp.177-181. ⟨10.1016/0169-4332(93)90085-P⟩
Article dans une revue istex hal-02042715 v1

Growth and characterization of In0.53Ga0.47As/InxGa1−xAs strained-layer superlattices

A. Kohl , S. Juillaguet , B. Fraisse , R. Schwedler , F. Royo et al.
Materials Science and Engineering: B, 1993, 21 (2-3), pp.244-248
Article dans une revue hal-02042603 v1

Exploring Gallium Nitride Bulk Crystal Growth

Tomasz Sochacki , M.A. Zajac , Matthieu Paillet , Sandrine Juillaguet , R. Kucharski et al.
E-MRS 2024 Fall Meeting, Symposium I-13 Bulk Nitrides, E-MRS 2024 Fall Meeting, 16-19 September 2024,, Sep 2024, Warsaw (POLAND), Poland
Communication dans un congrès hal-04829298 v1
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Capteur de gaz à base de graphène dédié au bilan carbone du cOMPOSTage de proximité

V. Astié , Nicolas Brun , Christophe Coillot , Sylvie Contreras , J.M. Decams et al.
ID en action !, Mission pour les initiatives transverses et interdisciplinaires du CNRS (MITI), Nov 2022, Paris, France
Communication dans un congrès hal-04209570 v1

Module Éducation à la Transition Écologique (ETE) à l'université de Montpellier : retour d'expérience

Jean-Louis Bantignies , Sandrine Bardet , Adeline Barnaud , Patrick Cañadas , Boris Chenaud et al.
10emes Journées Scientifiques NUMEV, Nov 2021, Montpellier, France
Communication dans un congrès hal-03428625 v1

Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates

Sylvie Contreras , Leszek Konczewicz , Roxana Arvinte , Herve Peyre , Thierry Chassagne et al.
11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.275
Communication dans un congrès hal-01935564 v1

Electrical transport properties of p-type 4H-SiC

Sylvie Contreras , Leszek Konczewicz , Roxana Arvinte , Herve Peyre , Thierry Chassagne et al.
E-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩
Communication dans un congrès hal-01540938 v1

Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers

Marcin Zielinski , Thierry Chassagne , Roxana Arvinte , Adrien Michon , Marc Portail et al.
11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.79
Communication dans un congrès hal-01935556 v1

Optical investigations and strain effect in AlGaN/GaN epitaxial layers

M. Jayasakthi , Sandrine Juillaguet , Herve Peyre , Leszek Konczewicz , Matthieu Moret et al.
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩
Communication dans un congrès hal-01935164 v1

High Temperature Annealing of MBE-grown Mg-doped GaN

Sylvie Contreras , Leszek Konczewicz , Herve Peyre , Sandrine Juillaguet , M. Al Khalfioui et al.
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩
Communication dans un congrès hal-01935176 v1

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Sylvie Contreras , Leszek Konczewicz , Pawel Kwasnicki , Roxana Arvinte , Herve Peyre et al.
16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩
Communication dans un congrès hal-01936580 v1

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

Marc Zielinski , Roxana Arvinte , Thierry Chassagne , Adrien Michon , Marc Portail et al.
ICSCRM, Oct 2015, Giardini Naxos, France. pp.137 - 142, ⟨10.4028/www.scientific.net/MSF.858.137⟩
Communication dans un congrès hal-01936467 v1

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

Nikolaos Tsavdaris , Pawel Kwasnicki , Kanaparin Ariyawong , Nathalie Valle , Herve Peyre et al.
ECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩
Communication dans un congrès hal-01936649 v1

Optical characterization of p-type 4H-SiC epilayers

Gediminas Liaugaudas , Donatas Dargis , Pawel Kwasnicki , Herve Peyre , Roxana Arvinte et al.
ECSCRM, Oct 2014, Miyasaki, Japan. pp.249-252
Communication dans un congrès hal-01935527 v1

Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy

Pawel Kwasnicki , Roxana Arvinte , Herve Peyre , Marcin Zielinski , Sandrine Juillaguet
10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.237 - 240, ⟨10.4028/www.scientific.net/MSF.821-823.237⟩
Communication dans un congrès hal-01936601 v1

Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers

Roxana Arvinte , Marcin Zielinski , Thierry Chassagne , Marc Portail , Adrien Michon et al.
10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.149-152
Communication dans un congrès hal-02025329 v1

Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization

Matthieu Florentin , Joan Marc Rafi , Florian Chevalier , Victor Soler , Leszek Konczewicz et al.
10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.717 - 720, ⟨10.4028/www.scientific.net/MSF.821-823.717⟩
Communication dans un congrès hal-01936637 v1

Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition

T. Sledziewski , S. Beljakowa , K. Alassaad , Pawel Kwasnicki , R. Arvinte et al.
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.261-+, ⟨10.4028/www.scientific.net/MSF.778-780.261⟩
Communication dans un congrès hal-01936293 v1

Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere

Pawel Kwasnicki , Valdas Jokubavicius , Jianwu Sun , Hervé Peyre , Rositsa Yakimova et al.
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.243-+, ⟨10.4028/www.scientific.net/MSF.778-780.243⟩
Communication dans un congrès hal-01936275 v1

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

Pawel Kwasnicki , Roxana Arvinte , Herve Peyre , Marcin Zielinski , Leszek Konczewicz et al.
HETEROSIC 2013, Jun 2013, nice, France. pp.51 - 55, ⟨10.4028/www.scientific.net/MSF.806.51⟩
Communication dans un congrès hal-01936666 v1

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

Roxana Arvinte , Marc Zielinski , Thierry Chassagne , Marc Portail , Adrien Michon et al.
HETEROSIC 2013, Jun 2013, Nice, France. pp.45 - 50, ⟨10.4028/www.scientific.net/MSF.806.45⟩
Communication dans un congrès hal-01936612 v1

Raman investigation of aluminum-doped 4H-SiC

Sandrine Juillaguet , Pawel Kwasnicki , Herve Peyre , Leszek Konczewicz , Sylvie Contreras et al.
ECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩
Communication dans un congrès hal-00803766 v1

Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy

Georgios Zoulis , J. Sun , R. Vasiliauskas , J. Lorenzzi , Hervé Peyre et al.
HETEROSIC & WASMPE 2011, Jun 2011, TOURS, France. pp.149-153, ⟨10.4028/www.scientific.net/MSF.711.149⟩
Communication dans un congrès hal-00655917 v1

Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications

Hervé Peyre , Jianwu Sun , Jude Guelfucci , Sandrine Juillaguet , J. Hassan et al.
HeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩
Communication dans un congrès hal-00655897 v1

Splitting of close N-Al donor-acceptor-pair spectra in 3C-SiC

Jianwu Sun , Georgios Zoulis , Jean Lorenzzi , Nikoletta Jegenyes , Sandrine Juillaguet et al.
Conference of the E-MRS Symposium F, Oct 2010, Strasbourg, France. pp.111-114, ⟨10.1063/1.3518273⟩
Communication dans un congrès hal-00653310 v1

LTPL investigation of N-Ga and N-Al donor-acceptor pair spectra in 3C-SiC layers grown by VLS on 6H-SiC substrates

J. W. Sun , G. Zoulis , J. Lorenzzi , N. Jegenyes , Sandrine Juillaguet et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.415-418
Communication dans un congrès hal-00543685 v1

Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid Technique

Georgios Zoulis , Jianwu Sun , Nikoletta Jegenyes , Jean Lorenzzi , Sandrine Juillaguet et al.
Conference of the E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.119-122
Communication dans un congrès hal-00653311 v1

Influence of the C∕Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C-SiC Homoepitaxial Layers

N. Jegenyes , M. Marinova , G. Zoulis , J. Lorenzzi , A. Andreadou et al.
E-MRS Symposium, European Materials Research Society, Oct 2010, Strasbourg, France. pp.31-34, ⟨10.1063/1.3518304⟩
Communication dans un congrès hal-02875519 v1

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

Jean Lorenzzi , Georgios Zoulis , Olivier Kim-Hak , Nikoletta Jegenyes , Davy Carole et al.
13th International Conference on Silicon Carbide and Related Materials 2009, Oct 2009, Nürnberg, Germany. pp.171-174, ⟨10.4028/www.scientific.net/MSF.645-648.171⟩
Communication dans un congrès hal-02864825 v1

6H-type zigzag faults in low-doped 4H-SiC expitaxial layers

Teddy Robert , M. Marinova , Sandrine Juillaguet , A. Henry , E. K. Polychroniadis et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.347-350
Communication dans un congrès hal-00543650 v1

Investigation of low doped n-type and p-type 3C-SiC layers grown on 6H-SiC substrates by sublimation epitaxy

G. Zoulis , J. Sun , M. Beshkova , R. Vasiliauskas , Sandrine Juillaguet et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.179-182
Communication dans un congrès hal-00543642 v1

Effect of growth parameters on the surface morphology of 3C-SiC homoepitaxial layers grown by chemical vapor deposition

N. Jegenyes , Jean Lorenzi , Georgios Zoulis , Véronique Soulière , Jacques Dazord et al.
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Communication dans un congrès hal-00390782 v1

Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity

Felix Oehlschlaeger , Sandrine Juillaguet , Herve Peyre , Jean Calmassel , Peter J. Wellmann
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.259-262
Communication dans un congrès hal-00389394 v1

Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes

Sandrine Juillaguet , Teddy Robert , Jean Camassel
9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.5-8
Communication dans un congrès hal-00543702 v1

Observation of 3C zigzag faults in low-doped 4H-SiC epitaxial layers

Teddy Robert , Maya Marinova , Sandrine Juillaguet , Anne Henry , Efsthatios Polychroniadis et al.
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, France
Communication dans un congrès hal-00390779 v1
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Optical investigations of stacking faults in silicon carbide

Sandrine Juillaguet , Teddy Robert , Jean Camassel
9th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies 2008, Jun 2008, lodz, Poland. pp.5
Communication dans un congrès hal-00814002 v1
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O19. Optical investigations techniques used for stacking faults characterization in SiC

Sandrine Juillaguet , Jean Camassel , Teddy Robert
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09) Catania (Italy), May 6th-7th, 2009, May 2009, catane, Italy
Communication dans un congrès hal-00814450 v1

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

J. Eid , I.-G. Galben , G. Zoulis , Teddy Robert , D. Chaussende et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48
Communication dans un congrès hal-00390466 v1

Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC

Maya Marinova , Georgios Zoulis , Teddy Robert , Frederic Mercier , Alkioni Mantzari et al.
25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730
Communication dans un congrès hal-00543681 v1

8H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?

Teddy Robert , Sandrine Juillaguet , M. Marinova , T. Chassagne , I. Tsiaoussis et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.339-342
Communication dans un congrès hal-00390453 v1

Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition

Maya Marinova , Teddy Robert , Sandrine Juillaguet , Ioannis Tsiaoussis , Nikolaos Frangis et al.
9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Sep 2008, Linz (AUSTRIA), France. pp.1924-1930
Communication dans un congrès hal-00543707 v1

Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC

M. Zielinski , M. Portail , T. Chassagne , Sandrine Juillaguet , Herve Peyre et al.
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.49-52
Communication dans un congrès hal-00389376 v1

Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seeds

Georgios Zoulis , Jean Lorenzi , R. Vasiliauskas , N. Jegenyes , M. Beshkova et al.
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Communication dans un congrès hal-00390772 v1

Growth and characterization of low doped 3C-SiC layers deposited by the VLS technique

Jean Lorenzi , Georgios Zoulis , O. Kim-Hak , Sandrine Juillaguet , Gabriel Ferro et al.
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Communication dans un congrès hal-00390727 v1

Recent aspects of in-grown stacking faults in 4H-SiC

Jean Camassel , Sandrine Juillaguet , Teddy Robert
17th European Heterostructure Technology Workshop, HETECH 2008, in Venice, Italy, Nov 2008, Venice, Italy
Communication dans un congrès hal-00390823 v1

Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC

Sandrine Juillaguet , M. Albrecht , Renata Lewandowska , Jean Camassel , T. Chassagne
8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 2006, Cadiz (SPAIN), Spain. pp.1513-1516, ⟨10.1002/pssc.200674133⟩
Communication dans un congrès istex hal-00389886 v1

Strain and wafer curvature of 3C-SiC films on silicon : influence of the growth conditions

Marcin Zielinski , S. Ndiaye , Thierry Chassagne , Sandrine Juillaguet , Renata Lewandowska et al.
International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06) No8, May 2006, Cádiz, Spain. pp.981-986
Communication dans un congrès hal-00389884 v1

Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies

Yeon-Suk Jang , Sakwe A. Sakwe , Peter J. Wellmann , Sandrine Juillaguet , Herve Peyre et al.
6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne (ENGLAND), France. pp.13-16
Communication dans un congrès hal-00541647 v1

Dopant effect of the optical properties of ZnO nanostructures

M. Stoehr , Sandrine Juillaguet , T.M. Kyaw , J.G. Wen
8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC2006), 2006, Cadiz, Spain. pp.1432
Communication dans un congrès hal-00390472 v1

Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

M. Zielinski , S. Ndiaye , T. Chassagne , Sandrine Juillaguet , Renata Lewandowska et al.
5th Brazo;oam/German Workshop on Applied Surface Science, Apr 2006, Mangaratiba (BRAZIL), France. pp.981-986
Communication dans un congrès hal-00543731 v1

Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC

Sandrine Juillaguet , Thierry Guillet , Richard Bardoux , Jean Camassel , T. Chassagne
6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne (ENGLAND), France. pp.351-354
Communication dans un congrès hal-00541635 v1

Prospects for 3C-SiC bulk crystal growth

D. Chaussende , Florian Mercier , Alexandre Boulle , Florine Conchon , M. Soueidan et al.
E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France
Communication dans un congrès hal-00285924 v1

Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method

Sylvie Contreras , M. Zielinski , Leszek Konczewicz , Caroline Blanc , Sandrine Juillaguet et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.633-636
Communication dans un congrès hal-00536296 v1

Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism

M. Soueidan , G. Ferro , J. Stoemenos , E. K. Polychroniadis , D. Chaussende et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290
Communication dans un congrès hal-00140124 v1
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Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

L. Latu-Romain , D. Chaussende , Carole Balloud , Sandrine Juillaguet , L. Rapenne et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩
Communication dans un congrès hal-00541637 v1

Specific aspects of type II heteropolytype stacking faults in SiC

Sandrine Juillaguet , Jean Camassel
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.335-340
Communication dans un congrès hal-00541645 v1

Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates

Caroline Blanc , M. Zielinski , V. Souliere , C. Sartel , Sandrine Juillaguet et al.
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.117-120
Communication dans un congrès hal-00541640 v1

Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix

Jean Camassel , Sandrine Juillaguet
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.331-334
Communication dans un congrès hal-00541642 v1

Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC

M. Zielinski , C. Balloud , Sandrine Juillaguet , B. Boyer , V. Souliere et al.
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.449-452
Communication dans un congrès hal-00541649 v1

Comparative evaluation of free-standing 3C-SiC crystals

E. Polychroniadis , C. Balloud , Sandrine Juillaguet , G. Ferro , Y. Monteil et al.
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.229-232
Communication dans un congrès hal-00541639 v1

Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization method

Thierry Chassagne , Gabriel Ferro , H. Haas , H. Mank , André Leycuras et al.
International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2004), Jun 2004, MONTPELLIER, France. pp.524-530, ⟨10.1002/pssa.200460415⟩
Communication dans un congrès istex hal-00389901 v1

Optical and structural characterization of electron beam ZnO thin films evaporated for sensors applications

Roy Al Asmar , Jean-Louis Sauvajol , Frédérique Pascal-Delannoy , Sandrine Juillaguet , Philippe Combette et al.
EUSPEN, 5th international conference, May 2005, Montpellier, France
Communication dans un congrès hal-01796894 v1

Comparative studies of (0001) 4H-SiC layers grown with either Silane or HexaMethylDiSilane Propane precursor systems.

C. Sartel , C. Balloud , V. Souliere , Sandrine Juillaguet , J. Dazord et al.
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.217-220
Communication dans un congrès hal-00543747 v1

Potential of HMDS/C3H8 precursor system for the growth of state of the art heteroepitaxial 3C-SiC layers on Si(100)

G. Ferro , Jean Camassel , Sandrine Juillaguet , C. Balloud , Ek Polychroniadis et al.
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.281-284
Communication dans un congrès hal-00543751 v1

Effect of SiN treatment on GaN epilayer quality

Z. Benzarti , I. Halidou , T. Boufaden , B. El Jani , Sandrine Juillaguet et al.
8th International Conference on Optics of Excitons in Confined Systems, Sep 2003, Lecce (ITALY), France. pp.502-508
Communication dans un congrès hal-00543761 v1

Dilute aluminum concentration in 4H-SiC : from SIMS to LTPL measurements

Sandrine Juillaguet , M. Zielinski , C. Balloud , C. Sartel , Christophe Consejo et al.
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.775-778
Communication dans un congrès hal-00543756 v1

Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers

Sandrine Juillaguet , C. Balloud , J. Pernot , C. Sartel , V. Souliere et al.
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.577-580
Communication dans un congrès hal-00543755 v1

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio et al.
5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès istex hal-00543738 v1

Investigation of < 1,1,-2,0 > epitaxial layers grown on a-cut 4H-SiC substrates.

Caroline Blanc , C. Sartel , V. Souliere , Sandrine Juillaguet , Y. Monteil et al.
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.237-240
Communication dans un congrès hal-00543749 v1

Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls”

Thierry Chassagne , André Leycuras , Carole Balloud , Philippe Arcade , Hervé Peyre et al.
10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003), Oct 2003, Lyon, France. pp.273-276
Communication dans un congrès hal-00389899 v1

Optical properties of GaN grown on porous silicon substrate

T. Boufaden , A. Matoussi , S. Guermazi , Sandrine Juillaguet , A. Toureille et al.
8th International Conference on Optics of Excitons in Confined Systems, Sep 2003, Lecce (ITALY), France. pp.582-587
Communication dans un congrès hal-00543762 v1

Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio et al.
5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩
Communication dans un congrès istex hal-00543736 v1

4H-SiC material for Hall effect and high-temperature sensors working in harsh environments

Jean-Louis Robert , Sylvie Contreras , Jean Camassel , J. Pernot , Sandrine Juillaguet et al.
International Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438
Communication dans un congrès hal-00543769 v1

Growth at high rates and characterization of bulk 3C-SiC material

G. Ferro , C. Balloud , Sandrine Juillaguet , P. Vicente , Jean Camassel et al.
4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, LINKOPING (SWEDEN), France. pp.115-118
Communication dans un congrès hal-00543767 v1

Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport

Jean Camassel , Sandrine Juillaguet , N. Planes , Andre Raymond , P. Grosse et al.
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.258-264
Communication dans un congrès hal-00543777 v1

Optical properties of As-grown, alpha-particle irradiated and N-2(+)-ion implaned GaN

Hw Kunert , Sandrine Juillaguet , Jean Camassel , Jb Malherbe , Rq Odendaal et al.
3rd International Conference on Nitride Semiconductors (ICNS 99), Jul 1999, MONTPELLIER (FRANCE), France. pp.619-623
Communication dans un congrès hal-00543770 v1

Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition

E. Neyret , G. Ferro , Sandrine Juillaguet , Jm Bluet , C. Jaussaud et al.
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.253-257
Communication dans un congrès hal-00543776 v1

Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

F. Namavar , Pc Colter , N. Planes , B. Fraisse , J. Pernot et al.
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.571-575
Communication dans un congrès hal-00543778 v1

Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC

P. Thomas , Sylvie Contreras , Sandrine Juillaguet , Jean-Louis Robert , Jean Camassel et al.
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.725-728
Communication dans un congrès hal-00543782 v1

Optical properties of InGaN/GaN multiple quantum wells

J. Allegre , Pierre Lefebvre , Sandrine Juillaguet , Jean Camassel , Wojciech Knap et al.
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.1295-1298
Communication dans un congrès hal-00543785 v1
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Experimental investigation of 4H-SiC bulk crystal growth

K. Chourou , M. Anikin , Jm Bluet , V. Lauer , G. Guillot et al.
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, Stockholm, Sweden. pp.17-20, ⟨10.4028/www.scientific.net/MSF.264-268.17⟩
Communication dans un congrès hal-00543779 v1

Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction

Andre Raymond , Sandrine Juillaguet , B. Couzinet , Iel Mezouar , A. Kamalsaadi et al.
European-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.211-214
Communication dans un congrès hal-00543787 v1

Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. Raman

H. Peyre , F. Alsina , S. Juillaguet , E. Massone , J. Camassel et al.
EXMATEC'92, May 1993, Lyon, France. pp.73-76
Communication dans un congrès hal-02042639 v1
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Towards an understanding of vanadium doping effects in 4H-SiC

Harmke van Dijk , Matthieu Paillet , Océane Février , Sandrine Juillaguet , S. Contreras et al.
Les Journées Nano, Micro et Optoélectronique (JNMO), Oct 2024, Sète, France
Poster de conférence hal-04829444 v1
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Genèse, contenu et perspectives d'un module expérimental d'éducation à la transition écologique à la Faculté des Sciences de l'université de Montpellier.

Olivier Arnould , Sandrine Bardet , Jean-Louis Bantignies , Adeline Barnaud , Ilham Bentaleb et al.
Enseigner les Transitions Ecologiques et Sociales dans le Supérieur, Jul 2023, Paris, France. 2023
Poster de conférence hal-04204671 v1
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Graphene: From Material to applications

Périne Landois , Sébastien Nanot , Benoit Jouault , Dilek Cakiroglu , Sylvie Contreras et al.
Graphene And Co Annual Meeting 2019, Oct 2019, Bad Herrenalb, Germany.
Poster de conférence hal-03144975 v1

Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

Sylvie Contreras , Leszek Konczewicz , Sandrine Juillaguet , Herve Peyre , Mohamed Al Khalfioui et al.
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Poster de conférence hal-01937531 v1

Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy

Julien Brault , Mathieu Leroux , Samuel Matta , Mohamed Al Khalfioui , Benjamin Damilano et al.
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Poster de conférence hal-01937537 v1