Sandrine Juillaguet
- Laboratoire Charles Coulomb (L2C)
- Axe Physique Appliquée (L2C) (PA)
- Axe Physique Appliquée (L2C) (PA)
- Groupe d'étude des semiconducteurs (GES)
- Laboratoire Charles Coulomb (L2C)
Publications
Publications
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AlGaN channel high electron mobility transistors on Si for power electronicsSymposium de Génie Électrique SGE 2025, CNRS, Jul 2025, Toulouse, France |
Exploring Gallium Nitride Bulk Crystal GrowthE-MRS 2024 Fall Meeting, Symposium I-13 Bulk Nitrides, E-MRS 2024 Fall Meeting, 16-19 September 2024,, Sep 2024, Warsaw (POLAND), Poland |
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Capteur de gaz à base de graphène dédié au bilan carbone du cOMPOSTage de proximitéID en action !, Mission pour les initiatives transverses et interdisciplinaires du CNRS (MITI), Nov 2022, Paris, France |
Module Éducation à la Transition Écologique (ETE) à l'université de Montpellier : retour d'expérience10. Journées Scientifiques NUMEV, Nov 2021, Montpellier, France |
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Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.275 |
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Electrical transport properties of p-type 4H-SiCE-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩ |
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Optical investigations and strain effect in AlGaN/GaN epitaxial layers33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩ |
Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.79 |
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High Temperature Annealing of MBE-grown Mg-doped GaN33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩ |
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩ |
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p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with AluminumICSCRM, Oct 2015, Giardini Naxos, France. pp.137 - 142, ⟨10.4028/www.scientific.net/MSF.858.137⟩ |
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Optical characterization of p-type 4H-SiC epilayersECSCRM, Oct 2014, Miyasaki, Japan. pp.249-252 |
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Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiCECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩ |
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Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.237 - 240, ⟨10.4028/www.scientific.net/MSF.821-823.237⟩ |
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Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.149-152 |
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Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.717 - 720, ⟨10.4028/www.scientific.net/MSF.821-823.717⟩ |
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Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVDHETEROSIC 2013, Jun 2013, nice, France. pp.51 - 55, ⟨10.4028/www.scientific.net/MSF.806.51⟩ |
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Characterization of Ge-doped homoepitaxial layers grown by chemical vapor depositionSILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.261-+, ⟨10.4028/www.scientific.net/MSF.778-780.261⟩ |
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Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphereSILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.243-+, ⟨10.4028/www.scientific.net/MSF.778-780.243⟩ |
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Investigation of Aluminum Incorporation in 4H-SiC Epitaxial LayersHETEROSIC 2013, Jun 2013, Nice, France. pp.45 - 50, ⟨10.4028/www.scientific.net/MSF.806.45⟩ |
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Raman investigation of aluminum-doped 4H-SiCECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩ |
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Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxyHETEROSIC & WASMPE 2011, Jun 2011, TOURS, France. pp.149-153, ⟨10.4028/www.scientific.net/MSF.711.149⟩ |
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Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device ApplicationsHeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩ |
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Influence of the C∕Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C-SiC Homoepitaxial LayersE-MRS Symposium, European Materials Research Society, Oct 2010, Strasbourg, France. pp.31-34, ⟨10.1063/1.3518304⟩ |
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Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates13th International Conference on Silicon Carbide and Related Materials 2009, Oct 2009, Nürnberg, Germany. pp.171-174, ⟨10.4028/www.scientific.net/MSF.645-648.171⟩ |
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LTPL investigation of N-Ga and N-Al donor-acceptor pair spectra in 3C-SiC layers grown by VLS on 6H-SiC substrates13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.415-418 |
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Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid TechniqueConference of the E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.119-122 |
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Splitting of close N-Al donor-acceptor-pair spectra in 3C-SiCConference of the E-MRS Symposium F, Oct 2010, Strasbourg, France. pp.111-114, ⟨10.1063/1.3518273⟩ |
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6H-type zigzag faults in low-doped 4H-SiC expitaxial layers13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.347-350 |
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Investigation of low doped n-type and p-type 3C-SiC layers grown on 6H-SiC substrates by sublimation epitaxy13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.179-182 |
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Observation of 3C zigzag faults in low-doped 4H-SiC epitaxial layersInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, France |
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Optical investigations of stacking faults in silicon carbide9th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies 2008, Jun 2008, lodz, Poland. pp.5 |
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O19. Optical investigations techniques used for stacking faults characterization in SiCInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09) Catania (Italy), May 6th-7th, 2009, May 2009, catane, Italy |
Effect of growth parameters on the surface morphology of 3C-SiC homoepitaxial layers grown by chemical vapor depositionInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy |
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Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.5-8 |
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Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.259-262 |
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Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48 |
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Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730 |
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Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Sep 2008, Linz (AUSTRIA), France. pp.1924-1930 |
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8H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.339-342 |
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Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seedsInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy |
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Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.49-52 |
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Growth and characterization of low doped 3C-SiC layers deposited by the VLS techniqueInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy |
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Recent aspects of in-grown stacking faults in 4H-SiC17th European Heterostructure Technology Workshop, HETECH 2008, in Venice, Italy, Nov 2008, Venice, Italy |
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Strain and wafer curvature of 3C-SiC films on silicon : influence of the growth conditionsInternational Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06) No8, May 2006, Cádiz, Spain. pp.981-986 |
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Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 2006, Cadiz (SPAIN), Spain. pp.1513-1516, ⟨10.1002/pssc.200674133⟩ |
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Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne (ENGLAND), France. pp.13-16 |
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Dopant effect of the optical properties of ZnO nanostructures8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC2006), 2006, Cadiz, Spain. pp.1432 |
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Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne (ENGLAND), France. pp.351-354 |
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Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions5th Brazo;oam/German Workshop on Applied Surface Science, Apr 2006, Mangaratiba (BRAZIL), France. pp.981-986 |
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Prospects for 3C-SiC bulk crystal growthE-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France |
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Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT methodInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.633-636 |
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Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanismInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290 |
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Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT methodInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩ |
Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization methodInternational Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2004), Jun 2004, MONTPELLIER, France. pp.524-530, ⟨10.1002/pssa.200460415⟩ |
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Specific aspects of type II heteropolytype stacking faults in SiC5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.335-340 |
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Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.449-452 |
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Comparative evaluation of free-standing 3C-SiC crystals5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.229-232 |
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Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.117-120 |
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Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.331-334 |
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Optical and structural characterization of electron beam ZnO thin films evaporated for sensors applicationsEUSPEN, 5th international conference, May 2005, Montpellier, France |
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Comparative studies of (0001) 4H-SiC layers grown with either Silane or HexaMethylDiSilane Propane precursor systems.10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.217-220 |
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Effect of SiN treatment on GaN epilayer quality8th International Conference on Optics of Excitons in Confined Systems, Sep 2003, Lecce (ITALY), France. pp.502-508 |
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Potential of HMDS/C3H8 precursor system for the growth of state of the art heteroepitaxial 3C-SiC layers on Si(100)10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.281-284 |
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Dilute aluminum concentration in 4H-SiC : from SIMS to LTPL measurements10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.775-778 |
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Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.577-580 |
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩ |
Investigation of < 1,1,-2,0 > epitaxial layers grown on a-cut 4H-SiC substrates.10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.237-240 |
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Optical properties of GaN grown on porous silicon substrate8th International Conference on Optics of Excitons in Confined Systems, Sep 2003, Lecce (ITALY), France. pp.582-587 |
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Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls”10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003), Oct 2003, Lyon, France. pp.273-276 |
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Optical properties of GaN/AlN quantum boxes under high photo-excitation5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩ |
Growth at high rates and characterization of bulk 3C-SiC material4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, LINKOPING (SWEDEN), France. pp.115-118 |
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4H-SiC material for Hall effect and high-temperature sensors working in harsh environmentsInternational Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438 |
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Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.258-264 |
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Optical properties of As-grown, alpha-particle irradiated and N-2(+)-ion implaned GaN3rd International Conference on Nitride Semiconductors (ICNS 99), Jul 1999, MONTPELLIER (FRANCE), France. pp.619-623 |
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Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.253-257 |
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Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.571-575 |
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Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.725-728 |
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Optical properties of InGaN/GaN multiple quantum wells7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.1295-1298 |
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Experimental investigation of 4H-SiC bulk crystal growth7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, Stockholm, Sweden. pp.17-20, ⟨10.4028/www.scientific.net/MSF.264-268.17⟩ |
Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunctionEuropean-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.211-214 |
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Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. RamanEXMATEC'92, May 1993, Lyon, France. pp.73-76 |
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Towards an understanding of vanadium doping effects in 4H-SiCLes Journées Nano, Micro et Optoélectronique (JNMO), Oct 2024, Sète, France |
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Genèse, contenu et perspectives d'un module expérimental d'éducation à la transition écologique à la Faculté des Sciences de l'université de Montpellier.Colloque ETES 2023 : Enseigner les transitions écologiques et sociales dans le supérieur, Jul 2023, Paris, France. 2023 |
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Graphene: From Material to applicationsGraphene And Co Annual Meeting 2019, Oct 2019, Bad Herrenalb, Germany. |
Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaNInternational Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan |
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Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxyInternational Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan |