
SJ
Sandrine Juillaguet
131
Documents
Affiliations actuelles
- Laboratoire Charles Coulomb (L2C)
- Axe Physique Appliquée (L2C) (PA)
- Axe Physique Appliquée (L2C) (PA)
- Groupe d'étude des semiconducteurs (GES)
- Laboratoire Charles Coulomb (L2C)
Identifiants chercheurs
Publications
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Publications
Exploring Gallium Nitride Bulk Crystal GrowthE-MRS 2024 Fall Meeting, Symposium I-13 Bulk Nitrides, E-MRS 2024 Fall Meeting, 16-19 September 2024,, Sep 2024, Warsaw (POLAND), Poland
Communication dans un congrès
hal-04829298
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Capteur de gaz à base de graphène dédié au bilan carbone du cOMPOSTage de proximitéID en action !, Mission pour les initiatives transverses et interdisciplinaires du CNRS (MITI), Nov 2022, Paris, France
Communication dans un congrès
hal-04209570
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Module Éducation à la Transition Écologique (ETE) à l'université de Montpellier : retour d'expérience10emes Journées Scientifiques NUMEV, Nov 2021, Montpellier, France
Communication dans un congrès
hal-03428625
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Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.275
Communication dans un congrès
hal-01935564
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Electrical transport properties of p-type 4H-SiCE-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩
Communication dans un congrès
hal-01540938
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Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.79
Communication dans un congrès
hal-01935556
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Optical investigations and strain effect in AlGaN/GaN epitaxial layers33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩
Communication dans un congrès
hal-01935164
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High Temperature Annealing of MBE-grown Mg-doped GaN33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩
Communication dans un congrès
hal-01935176
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩
Communication dans un congrès
hal-01936580
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p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with AluminumICSCRM, Oct 2015, Giardini Naxos, France. pp.137 - 142, ⟨10.4028/www.scientific.net/MSF.858.137⟩
Communication dans un congrès
hal-01936467
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Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiCECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩
Communication dans un congrès
hal-01936649
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Optical characterization of p-type 4H-SiC epilayersECSCRM, Oct 2014, Miyasaki, Japan. pp.249-252
Communication dans un congrès
hal-01935527
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Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.237 - 240, ⟨10.4028/www.scientific.net/MSF.821-823.237⟩
Communication dans un congrès
hal-01936601
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Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.149-152
Communication dans un congrès
hal-02025329
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Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.717 - 720, ⟨10.4028/www.scientific.net/MSF.821-823.717⟩
Communication dans un congrès
hal-01936637
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Characterization of Ge-doped homoepitaxial layers grown by chemical vapor depositionSILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.261-+, ⟨10.4028/www.scientific.net/MSF.778-780.261⟩
Communication dans un congrès
hal-01936293
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Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphereSILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.243-+, ⟨10.4028/www.scientific.net/MSF.778-780.243⟩
Communication dans un congrès
hal-01936275
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Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVDHETEROSIC 2013, Jun 2013, nice, France. pp.51 - 55, ⟨10.4028/www.scientific.net/MSF.806.51⟩
Communication dans un congrès
hal-01936666
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Investigation of Aluminum Incorporation in 4H-SiC Epitaxial LayersHETEROSIC 2013, Jun 2013, Nice, France. pp.45 - 50, ⟨10.4028/www.scientific.net/MSF.806.45⟩
Communication dans un congrès
hal-01936612
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Raman investigation of aluminum-doped 4H-SiCECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩
Communication dans un congrès
hal-00803766
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Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxyHETEROSIC & WASMPE 2011, Jun 2011, TOURS, France. pp.149-153, ⟨10.4028/www.scientific.net/MSF.711.149⟩
Communication dans un congrès
hal-00655917
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Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device ApplicationsHeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩
Communication dans un congrès
hal-00655897
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Splitting of close N-Al donor-acceptor-pair spectra in 3C-SiCConference of the E-MRS Symposium F, Oct 2010, Strasbourg, France. pp.111-114, ⟨10.1063/1.3518273⟩
Communication dans un congrès
hal-00653310
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LTPL investigation of N-Ga and N-Al donor-acceptor pair spectra in 3C-SiC layers grown by VLS on 6H-SiC substrates13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.415-418
Communication dans un congrès
hal-00543685
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Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid TechniqueConference of the E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.119-122
Communication dans un congrès
hal-00653311
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Influence of the C∕Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C-SiC Homoepitaxial LayersE-MRS Symposium, European Materials Research Society, Oct 2010, Strasbourg, France. pp.31-34, ⟨10.1063/1.3518304⟩
Communication dans un congrès
hal-02875519
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Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates13th International Conference on Silicon Carbide and Related Materials 2009, Oct 2009, Nürnberg, Germany. pp.171-174, ⟨10.4028/www.scientific.net/MSF.645-648.171⟩
Communication dans un congrès
hal-02864825
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6H-type zigzag faults in low-doped 4H-SiC expitaxial layers13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.347-350
Communication dans un congrès
hal-00543650
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Investigation of low doped n-type and p-type 3C-SiC layers grown on 6H-SiC substrates by sublimation epitaxy13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg (GERMANY), France. pp.179-182
Communication dans un congrès
hal-00543642
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Effect of growth parameters on the surface morphology of 3C-SiC homoepitaxial layers grown by chemical vapor depositionInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Communication dans un congrès
hal-00390782
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Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.259-262
Communication dans un congrès
hal-00389394
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Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.5-8
Communication dans un congrès
hal-00543702
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Observation of 3C zigzag faults in low-doped 4H-SiC epitaxial layersInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, France
Communication dans un congrès
hal-00390779
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Optical investigations of stacking faults in silicon carbide9th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies 2008, Jun 2008, lodz, Poland. pp.5
Communication dans un congrès
hal-00814002
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O19. Optical investigations techniques used for stacking faults characterization in SiCInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09) Catania (Italy), May 6th-7th, 2009, May 2009, catane, Italy
Communication dans un congrès
hal-00814450
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Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48
Communication dans un congrès
hal-00390466
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Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730
Communication dans un congrès
hal-00543681
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8H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.339-342
Communication dans un congrès
hal-00390453
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Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Sep 2008, Linz (AUSTRIA), France. pp.1924-1930
Communication dans un congrès
hal-00543707
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Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.49-52
Communication dans un congrès
hal-00389376
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Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seedsInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Communication dans un congrès
hal-00390772
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Growth and characterization of low doped 3C-SiC layers deposited by the VLS techniqueInternational workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Communication dans un congrès
hal-00390727
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Recent aspects of in-grown stacking faults in 4H-SiC17th European Heterostructure Technology Workshop, HETECH 2008, in Venice, Italy, Nov 2008, Venice, Italy
Communication dans un congrès
hal-00390823
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Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 2006, Cadiz (SPAIN), Spain. pp.1513-1516, ⟨10.1002/pssc.200674133⟩
Communication dans un congrès
istex
hal-00389886
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Strain and wafer curvature of 3C-SiC films on silicon : influence of the growth conditionsInternational Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06) No8, May 2006, Cádiz, Spain. pp.981-986
Communication dans un congrès
hal-00389884
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Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne (ENGLAND), France. pp.13-16
Communication dans un congrès
hal-00541647
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Dopant effect of the optical properties of ZnO nanostructures8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC2006), 2006, Cadiz, Spain. pp.1432
Communication dans un congrès
hal-00390472
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Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions5th Brazo;oam/German Workshop on Applied Surface Science, Apr 2006, Mangaratiba (BRAZIL), France. pp.981-986
Communication dans un congrès
hal-00543731
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Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne (ENGLAND), France. pp.351-354
Communication dans un congrès
hal-00541635
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Prospects for 3C-SiC bulk crystal growthE-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France
Communication dans un congrès
hal-00285924
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Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT methodInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.633-636
Communication dans un congrès
hal-00536296
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Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanismInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290
Communication dans un congrès
hal-00140124
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Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT methodInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩
Communication dans un congrès
hal-00541637
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Specific aspects of type II heteropolytype stacking faults in SiC5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.335-340
Communication dans un congrès
hal-00541645
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Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.117-120
Communication dans un congrès
hal-00541640
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Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.331-334
Communication dans un congrès
hal-00541642
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Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.449-452
Communication dans un congrès
hal-00541649
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Comparative evaluation of free-standing 3C-SiC crystals5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.229-232
Communication dans un congrès
hal-00541639
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Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization methodInternational Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2004), Jun 2004, MONTPELLIER, France. pp.524-530, ⟨10.1002/pssa.200460415⟩
Communication dans un congrès
istex
hal-00389901
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Optical and structural characterization of electron beam ZnO thin films evaporated for sensors applicationsEUSPEN, 5th international conference, May 2005, Montpellier, France
Communication dans un congrès
hal-01796894
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Comparative studies of (0001) 4H-SiC layers grown with either Silane or HexaMethylDiSilane Propane precursor systems.10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.217-220
Communication dans un congrès
hal-00543747
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Potential of HMDS/C3H8 precursor system for the growth of state of the art heteroepitaxial 3C-SiC layers on Si(100)10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.281-284
Communication dans un congrès
hal-00543751
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Effect of SiN treatment on GaN epilayer quality8th International Conference on Optics of Excitons in Confined Systems, Sep 2003, Lecce (ITALY), France. pp.502-508
Communication dans un congrès
hal-00543761
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Dilute aluminum concentration in 4H-SiC : from SIMS to LTPL measurements10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.775-778
Communication dans un congrès
hal-00543756
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Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.577-580
Communication dans un congrès
hal-00543755
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩
Communication dans un congrès
istex
hal-00543738
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Investigation of < 1,1,-2,0 > epitaxial layers grown on a-cut 4H-SiC substrates.10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Oct 2003, Lyon (FRANCE), France. pp.237-240
Communication dans un congrès
hal-00543749
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Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls”10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003), Oct 2003, Lyon, France. pp.273-276
Communication dans un congrès
hal-00389899
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Optical properties of GaN grown on porous silicon substrate8th International Conference on Optics of Excitons in Confined Systems, Sep 2003, Lecce (ITALY), France. pp.582-587
Communication dans un congrès
hal-00543762
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Optical properties of GaN/AlN quantum boxes under high photo-excitation5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩
Communication dans un congrès
istex
hal-00543736
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4H-SiC material for Hall effect and high-temperature sensors working in harsh environmentsInternational Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438
Communication dans un congrès
hal-00543769
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Growth at high rates and characterization of bulk 3C-SiC material4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, LINKOPING (SWEDEN), France. pp.115-118
Communication dans un congrès
hal-00543767
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Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.258-264
Communication dans un congrès
hal-00543777
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Optical properties of As-grown, alpha-particle irradiated and N-2(+)-ion implaned GaN3rd International Conference on Nitride Semiconductors (ICNS 99), Jul 1999, MONTPELLIER (FRANCE), France. pp.619-623
Communication dans un congrès
hal-00543770
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Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.253-257
Communication dans un congrès
hal-00543776
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Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Sep 1998, MONTPELLIER (FRANCE), France. pp.571-575
Communication dans un congrès
hal-00543778
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Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.725-728
Communication dans un congrès
hal-00543782
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Optical properties of InGaN/GaN multiple quantum wells7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.1295-1298
Communication dans un congrès
hal-00543785
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Experimental investigation of 4H-SiC bulk crystal growth7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, Stockholm, Sweden. pp.17-20, ⟨10.4028/www.scientific.net/MSF.264-268.17⟩
Communication dans un congrès
hal-00543779
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Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunctionEuropean-Materials-Research-Society 1996 Spring Meeting, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, Jun 1996, STRASBOURG (FRANCE), France. pp.211-214
Communication dans un congrès
hal-00543787
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Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. RamanEXMATEC'92, May 1993, Lyon, France. pp.73-76
Communication dans un congrès
hal-02042639
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Towards an understanding of vanadium doping effects in 4H-SiCLes Journées Nano, Micro et Optoélectronique (JNMO), Oct 2024, Sète, France
Poster de conférence
hal-04829444
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Genèse, contenu et perspectives d'un module expérimental d'éducation à la transition écologique à la Faculté des Sciences de l'université de Montpellier.Enseigner les Transitions Ecologiques et Sociales dans le Supérieur, Jul 2023, Paris, France. 2023
Poster de conférence
hal-04204671
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Graphene: From Material to applicationsGraphene And Co Annual Meeting 2019, Oct 2019, Bad Herrenalb, Germany.
Poster de conférence
hal-03144975
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Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaNInternational Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Poster de conférence
hal-01937531
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Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxyInternational Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Poster de conférence
hal-01937537
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