Sreejith Pallikkara Chandrasekharan
6
Documents
Affiliations actuelles
- 491814
Identifiants chercheurs
- sreejith-pallikkara-chandrasekharan
- Google Scholar : https://scholar.google.fr/citations?user=yI80En8AAAAJ
- 0000-0002-0822-1831
Présentation
**Education:**
2021: Master's Degree in Physics (Computational Physics), Central University of Punjab, India
**About:**
Sreejith Pallikkara Chandrasekharan is a PhD candidate at the INSA Rennes (FOTON Institute - CNRS UMR 6082). His research focuses on understanding of physical processes in III-V semiconductor nanostructures for silicon photonics. The polar surface and interface energies of semiconductors, first principles simulation of the growth, mechanical stability, electronic, and optical properties of semiconductors, and electronic structure theory beyond the DFT are some of his latest scientific interests.
Domaines de recherche
Physique [physics]
Compétences
Publications
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Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristicsJournées Surfaces & Interfaces 2024, Jan 2024, Grenoble, France
Poster de conférence
hal-04417767v1
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Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculationsJournée Scientifique SFP-SCF Bretagne & Pays de Loire 2023, May 2023, Rennes, France. 2023
Poster de conférence
hal-04110076v2
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Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations“Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France
Communication dans un congrès
hal-04224975v1
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Inevitable Si surface passivation prior to III-V/Si epitaxy: Strong impact on wetting propertiesPhysical Review B, 2024, 109 (4), pp.045304. ⟨10.1103/physrevb.109.045304⟩
Article dans une revue
hal-04429691v1
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Carcinogenic dioxane detection using pristine and metal-doped 2D VSe2: Insights from density functional theory simulationsAip Advances, 2023, 13 (6), ⟨10.1063/5.0139779⟩
Article dans une revue
hal-04198629v1
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Determination of III-V/Si absolute interface energies: impact on wetting propertiesPhysical Review B, 2023, 108 (7), pp.075305. ⟨10.1103/PhysRevB.108.075305⟩
Article dans une revue
hal-04224894v2
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