Sreejith Pallikkara Chandrasekharan
- Institut des Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
Présentation
Education:
2025: Doctor of Philosophy - PhD, Materials and Devices for Electronics and Photonics, INSA Rennes, France
2021: Master's Degree in Physics (Computational Physics), Central University of Punjab, India About:
Sreejith Pallikkara Chandrasekharan is now a Post Doctotal Researcher at the INSA Rennes (FOTON Institute - CNRS UMR 6082). His research focuses on understanding of physical processes in III-V semiconductor nanostructures for silicon photonics. The polar surface and interface energies of semiconductors, first principles simulation of the growth, mechanical stability, electronic, and optical properties of semiconductors, and electronic structure theory beyond the DFT are some of his latest scientific interests.
Domaines de recherche
Publications
Publications
Semiempirical DFTB Approaches for 3D and 2D Perovskites and Their HeterostructuresJournées Pérovskites Halogénées (JPH) 2026, May 2026, Saint-Lambert, France. 2026 |
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Heteroepitaxial growth of III-V on Si: a DFT perspective36th International Confererence on the Physics of Semiconductors 2024., Jul 2024, Ottawa, Canada |
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Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristicsJournées Surfaces & Interfaces 2024, Jan 2024, Grenoble, France |
Atomic scale description of III-V/Si (001) heteroepitaxial crystals23rd International Conference on Molecular-Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan |
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Impact of initial surface passivation on wetting properties analysis during III-V/Si epitaxyE-MRS 2024 Spring meeting, May 2024, Strasbourg, France |
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Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculationsJournée Scientifique SFP-SCF Bretagne & Pays de Loire 2023, May 2023, Rennes, France. 2023 |
Predictions of Wulff-Kaischew equilibrium shapes during heteroepitaxial Growth of III-V on Si: DFT and in-situ ExperimentsAPS Global Physics Summit 2025, American Physical Society (APS), Mar 2025, Anaheim, California, United States |
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III-V/Si Heteroepitaxy: Understanding and Mastering Growth Fundamentals24th American Conference on Crystal Growth and Epitaxy (ACCGE-24), Jul 2025, Stevenson, United States |
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Theoretical insights into heteroepitaxial growth: Predicting equilibrium crystal shapesGDR MatEpi, CNRS, Nov 2025, Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) in Villeneuve-d'Ascq, France |
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Stability of monodomain III-V crystals over a Si monoatomic step including the formation of antiphase boundariesEMRS spring meeting 2024, May 2024, Strasbourg, France |
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Understanding III-V/Si Heteroepitaxy: Experiments and Theory8th European conference on crystal growth, Jul 2024, Warsaw, Poland |
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III-V/Si epitaxial growth and antiphase domains: a matter of symmetryOSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France |
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Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations“Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France |