 
    Sreejith Pallikkara Chandrasekharan
                                    14 
                                    
                            Documents
                                
         Affiliation actuelle 
        
                                                                
- Institut des Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
     Identifiants chercheurs 
    
                                                                
    
                                                                Présentation
Education: 2021: Master's Degree in Physics (Computational Physics), Central University of Punjab, India
About: Sreejith Pallikkara Chandrasekharan is a PhD candidate at the INSA Rennes (FOTON Institute - CNRS UMR 6082). His research focuses on understanding of physical processes in III-V semiconductor nanostructures for silicon photonics. The polar surface and interface energies of semiconductors, first principles simulation of the growth, mechanical stability, electronic, and optical properties of semiconductors, and electronic structure theory beyond the DFT are some of his latest scientific interests.
Domaines de recherche
                                     Physique [physics] 
                            
                Publications
Publications
| Predictions of Wulff-Kaischew equilibrium shapes during heteroepitaxial Growth of III-V on Si: DFT and in-situ ExperimentsAPS Global Physics Summit 2025, American Physical Society (APS), Mar 2025, Anaheim, California, United StatesCommunication dans un congrès
                    
        
        
            
                
                    hal-05212796
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| III-V/Si Heteroepitaxy: Understanding and Mastering Growth Fundamentals24th American Conference on Crystal Growth and Epitaxy (ACCGE-24), Jul 2025, Stevenson, United StatesCommunication dans un congrès
                    
        
        
            
                
                    hal-05204877
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| III-V/Si epitaxial growth and antiphase domains: a matter of symmetryOSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, FranceCommunication dans un congrès
                    
        
        
            
                
                    hal-04738319
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| Stability of monodomain III-V crystals over a Si monoatomic step including the formation of antiphase boundariesEMRS spring meeting 2024, May 2024, Strasbourg, FranceCommunication dans un congrès
                    
        
        
            
                
                    hal-04745358
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| Understanding III-V/Si Heteroepitaxy: Experiments and Theory8th European conference on crystal growth, Jul 2024, Warsaw, PolandCommunication dans un congrès
                    
        
        
            
                
                    hal-04745129
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| Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations“Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, FranceCommunication dans un congrès
                    
        
        
            
                
                    hal-04224975
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|  | Inevitable Si surface passivation prior to III-V/Si epitaxy: Strong impact on wetting propertiesPhysical Review B, 2024, 109 (4), pp.045304. ⟨10.1103/physrevb.109.045304⟩Article dans une revue
                    
        
        
            
                
                    hal-04429691
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|  | Determination of III-V/Si absolute interface energies: impact on wetting propertiesPhysical Review B, 2023, 108 (7), pp.075305. ⟨10.1103/PhysRevB.108.075305⟩Article dans une revue
                    
        
        
            
                
                    hal-04224894
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|  | Carcinogenic dioxane detection using pristine and metal-doped 2D VSe2: Insights from density functional theory simulationsAip Advances, 2023, 13 (6), pp.065024. ⟨10.1063/5.0139779⟩Article dans une revue
                    
        
        
            
                
                    hal-04198629
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