Sreejith Pallikkara Chandrasekharan
- Institut des Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
Présentation
Education:
2025: Doctor of Philosophy - PhD, Materials and Devices for Electronics and Photonics, INSA Rennes, France
2021: Master's Degree in Physics (Computational Physics), Central University of Punjab, India About:
Sreejith Pallikkara Chandrasekharan is now a Post Doctotal Researcher at the INSA Rennes (FOTON Institute - CNRS UMR 6082). His research focuses on understanding of physical processes in III-V semiconductor nanostructures for silicon photonics. The polar surface and interface energies of semiconductors, first principles simulation of the growth, mechanical stability, electronic, and optical properties of semiconductors, and electronic structure theory beyond the DFT are some of his latest scientific interests.
Domaines de recherche
Publications
Publications
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Computational Assessment of Nonpolar and Polar GaP Terminations for Photoelectrochemical Water SplittingThe Journal of physical chemistry, 2025, 129 (36), pp.16308-16318. ⟨10.1021/acs.jpcc.5c03423⟩ |
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Inevitable Si surface passivation prior to III-V/Si epitaxy: Strong impact on wetting propertiesPhysical Review B, 2024, 109 (4), pp.045304. ⟨10.1103/physrevb.109.045304⟩ |
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Determination of III-V/Si absolute interface energies: impact on wetting propertiesPhysical Review B, 2023, 108 (7), pp.075305. ⟨10.1103/PhysRevB.108.075305⟩ |
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Carcinogenic dioxane detection using pristine and metal-doped 2D VSe2: Insights from density functional theory simulationsAIP Advances, 2023, 13 (6), pp.065024. ⟨10.1063/5.0139779⟩ |
Predictions of Wulff-Kaischew equilibrium shapes during heteroepitaxial Growth of III-V on Si: DFT and in-situ ExperimentsAPS Global Physics Summit 2025, American Physical Society (APS), Mar 2025, Anaheim, California, United States |
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III-V/Si Heteroepitaxy: Understanding and Mastering Growth Fundamentals24th American Conference on Crystal Growth and Epitaxy (ACCGE-24), Jul 2025, Stevenson, United States |
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Theoretical insights into heteroepitaxial growth: Predicting equilibrium crystal shapesGDR MatEpi, CNRS, Nov 2025, Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN) in Villeneuve-d'Ascq, France |
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III-V/Si epitaxial growth and antiphase domains: a matter of symmetryOSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France |
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Stability of monodomain III-V crystals over a Si monoatomic step including the formation of antiphase boundariesEMRS spring meeting 2024, May 2024, Strasbourg, France |
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Understanding III-V/Si Heteroepitaxy: Experiments and Theory8th European conference on crystal growth, Jul 2024, Warsaw, Poland |
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Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations“Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France |